WO2015096113A1 - 低温多晶硅薄膜的预清洗方法及其制备方法、制作系统 - Google Patents

低温多晶硅薄膜的预清洗方法及其制备方法、制作系统 Download PDF

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WO2015096113A1
WO2015096113A1 PCT/CN2013/090627 CN2013090627W WO2015096113A1 WO 2015096113 A1 WO2015096113 A1 WO 2015096113A1 CN 2013090627 W CN2013090627 W CN 2013090627W WO 2015096113 A1 WO2015096113 A1 WO 2015096113A1
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amorphous silicon
silicon layer
temperature
cleaning
polysilicon film
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English (en)
French (fr)
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张隆贤
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/234,144 priority Critical patent/US9287108B2/en
Priority to KR1020167016394A priority patent/KR101944598B1/ko
Priority to RU2016124648A priority patent/RU2647561C2/ru
Priority to GB1607360.3A priority patent/GB2535369B/en
Priority to JP2016532049A priority patent/JP6286547B2/ja
Priority to DE112013007733.7T priority patent/DE112013007733T5/de
Publication of WO2015096113A1 publication Critical patent/WO2015096113A1/zh
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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Definitions

  • the invention belongs to the technical field of liquid crystal displays, and relates to a method for preparing a low temperature polysilicon film. Background technique
  • ELA produces low-temperature polysilicon by: growing a buffer layer on a glass substrate and then growing an amorphous silicon layer on the buffer layer. Finally, the amorphous silicon layer is scanned by ELA laser, and the amorphous silicon is melted and recrystallized at a high temperature to form a polysilicon layer.
  • the thickness of the amorphous silicon film is not uniform, this will directly affect the uniformity of the formation of the polysilicon layer.
  • the uniformity of low temperature polysilicon directly affects its electrical properties. How to obtain a uniform polycrystalline silicon film by a low-cost, high-efficiency method is urgently needed to be solved.
  • the present invention provides a low temperature polysilicon film pre-cleaning method of heating an amorphous silicon layer to a temperature higher than room temperature and pre-cleaning the amorphous silicon layer.
  • the amorphous silicon layer is heated to a temperature of 25 to 40 °C.
  • Step 1 growing a buffer layer and an amorphous silicon layer sequentially from bottom to top on the substrate;
  • Step 2 heating the amorphous silicon layer to a temperature higher than room temperature, and pre-cleaning the amorphous silicon layer;
  • Step 3 irradiating the pre-cleaned amorphous silicon layer with the excimer laser beam to make the amorphous Silicon is converted to polysilicon.
  • the temperature of the amorphous silicon layer in the second step is 25 to 40 °C.
  • the amorphous silicon layer includes a first portion having a relatively large thickness and a second portion having a relatively small thickness, and the heating temperature of the first portion is higher than that of the second portion.
  • the cleaning agent used in the pre-cleaning is an aqueous solution of hydrofluoric acid having a mass concentration of 1 to 3%. Further, the duration of the pre-cleaning of the hydrofluoric acid is 45 to 60 s, and the amount is 40 to 60 L/min.
  • the present invention also provides a low temperature polysilicon film production system for implementing the above preparation method, comprising a sample stage, and
  • a temperature control device mounted on the sample stage for heating the amorphous silicon layer.
  • the pre-cleaning device includes a plurality of evenly disposed showerheads.
  • the temperature control device comprises a plurality of uniformly arranged heating groups, and each of the heating groups has an independent thermostat and a temperature monitor.
  • the heat generating group is a resistor block or a resistance wire.
  • the present invention improves the uniformity of an amorphous silicon layer by improving a low-temperature polysilicon film forming apparatus and a pre-cleaning method.
  • the low-temperature polysilicon film manufacturing system of the invention introduces a temperature control device, and cooperates with the pre-cleaning device to control the temperature height of the corresponding region according to the thickness difference of the unused region of the amorphous silicon layer, thereby controlling the thickness region to achieve different corrosion speeds, and finally achieving reduction
  • the thickness difference between different regions improves the uneven thickness of the amorphous silicon layer, thereby improving the uniformity of the polycrystalline silicon film formed by ELA irradiation in subsequent steps.
  • FIG. 1 is a schematic structural view of a manufacturing system of a low temperature polysilicon film of the present invention.
  • Fig. 2 (a) (b) is a schematic view showing the arrangement of the heat generating group of the temperature control device of the present invention on the sample stage.
  • Figure 3 (a) (b) (c) is a flow chart for preparing a low temperature polysilicon film of the present invention. detailed description
  • the present invention provides a low temperature polysilicon film fabrication system 100, as shown in FIG. 1, which includes at least a sample stage 10, an epitaxial growth device 20, an excimer laser beam 30 and a pre-cleaning device 40, and a temperature control device 50.
  • the epitaxial growth device 20 is disposed above the sample stage 10 for growing an amorphous silicon layer (not shown) on the sample stage 10, and other necessary material layers for forming a polysilicon film.
  • the pre-cleaning device 40 is disposed above the sample stage 10 and includes a plurality of evenly arranged shower heads 41.
  • the shower heads 41 controllably eject a cleaning agent for performing the amorphous silicon material. Pre-cleaned.
  • a temperature control device 50 is mounted on the sample stage 10 for heating the amorphous silicon material.
  • the amorphous silicon layer is formed on a substrate (not shown), so that the temperature control device 50 directly heats the substrate, and transfers heat to the amorphous silicon layer through the substrate.
  • the temperature control unit 50 is provided with a plurality of groups of heat generating groups 51 which are evenly arranged, and each of the heat generating units 51 has a separate temperature regulator 53 and a temperature monitor 52. The current temperature of each of the heat generating groups 51 is displayed by the temperature monitor 52.
  • the temperature adjuster 53 can be used to control and adjust the real-time temperature of each of the heat generating groups 51, and specifically heat or cool the different regions of the same amorphous silicon layer to achieve the same temperature.
  • each of the heat generating groups 51 may be, for example, a resistor block 51A or a series resistor block (not shown) distributed in a dot shape on the sample stage 10, as shown in FIG. 2(a); for example, the heat generating group 51
  • the electric resistance wire 51A may be wound around the sample stage 10 as shown in Fig. 2(b).
  • An excimer laser beam 30 is correspondingly disposed above the sample stage 10 for converting an amorphous silicon material placed on the sample stage 10 into a polysilicon material.
  • the epitaxial growth device 20, the excimer laser beam 30, and the pre-cleaning device 40 are movably mounted, and their corresponding positions with the sample stage 10 can be adjusted as needed in accordance with the needs of the preparation process.
  • a polycrystalline silicon film is prepared by using the above low temperature polysilicon film production system 100, which comprises the following steps:
  • Step 1 As shown in FIG. 3(a), a glass substrate 60 is placed on the sample stage 10, and then a buffer layer 70 is grown on the glass substrate 60 by the epitaxial growth device 20, and the material is silicon oxide. An amorphous silicon layer 80 is then grown on the buffer layer 70.
  • the surface of the amorphous silicon layer 80 is not evenly flat, at least A first region having a relatively large thickness and a second region having a relatively small thickness are included.
  • first area an edge area (second area) thin (as shown in Figure 3 (a)) or an intermediate area (second area) thin, edge area (first area) thick shape (not shown), or other non-uniformly distributed shapes.
  • Step 2 The amorphous silicon layer 80 obtained in the first step is sent to a cleaning chamber for high temperature dehydrogenation treatment.
  • the temperature control device 50 is then activated to heat the glass substrate 60 while warming the amorphous silicon layer 80.
  • the pre-cleaning device 40 is adjusted so as to be aligned with the surface of the amorphous silicon layer 80, ready for pre-cleaning.
  • the pre-cleaning operation of this embodiment is carried out at a room temperature of 23 ⁇ 2 °C.
  • the real-time temperature of each of the heat generating groups 51 of the temperature control device 50 is adjusted so that the heating temperature of the heat generating group 51 corresponding to the intermediate portion is higher than room temperature (25 to 40 ° C).
  • the heat generating group 51 in the edge region can be heated to a temperature lower than room temperature without heating.
  • the shower head 41 of the pre-cleaning device 40 is opened, and the entire surface of the amorphous silicon layer 80 is cleaned by discharging the cleaning agent.
  • the cleaning agent used in this embodiment is an aqueous solution of hydrofluoric acid, wherein the mass concentration of hydrofluoric acid is 1 to 3%, and the total flow rate of the shower head 41 is set to 40 to 60 L/min, and the spraying is performed by the shower head 41. Mode spray 45 ⁇ 60S.
  • the amorphous silicon layer having a thin intermediate edge it is also possible to adjust the heating temperature of the local region.
  • Hydrofluoric acid acts to etch away a thin layer of amorphous silicon surface, removing surface impurities and increasing surface flatness. Moreover, the rate of hydrofluoric acid etching reaction is related to temperature. When the temperature is high, the etching reaction is fast, and when the temperature is low, the etching reaction is slow. By using this, the temperature of different regions of the amorphous silicon layer can be controlled by the temperature control device, and the surface flatness of the amorphous silicon layer can be improved.
  • adjusting the heating group in the first region where the amorphous silicon layer is relatively thick increases the heating temperature
  • the heating temperature of the heating group is lowered or the heating is stopped, which may be based on amorphous silicon.
  • the actual shape of the layer is matched in time, SP, the heating temperature is proportional to the thickness of each layer of the amorphous silicon layer.
  • the first region having a large thickness of the amorphous silicon layer has a faster etching speed
  • the second region having a smaller thickness has a slower etching speed
  • the thickness difference between the different regions is continuously reduced, thereby improving the uneven thickness of the amorphous silicon layer.
  • the purpose of improving the surface flatness of the amorphous silicon layer is achieved, thereby providing a guarantee for obtaining a flat and uniform polysilicon layer in subsequent steps.
  • Step 3 After the pre-cleaning of the second step, the amorphous silicon layer 81 having a uniform flat surface is scanned by the excimer laser beam 30, and the amorphous silicon is converted into polycrystalline silicon as shown in FIG. 3(b). Thereby, a uniform, flat polycrystalline silicon film 90 is obtained, as shown in Fig. 3(c).
  • the low-temperature polysilicon film production system provided by the invention is easy to be modified and controlled; the polycrystalline silicon film is prepared by the system, the method is simple and convenient, and the flatness of the polysilicon film is effectively improved, and the method is ensured. The quality and performance of the components produced

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  • Crystallography & Structural Chemistry (AREA)
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  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

本发明涉及液晶显示技术领域，尤其是一种低温多晶硅薄膜的制备方法，包括如下步骤：步骤一：在基板上从下至上依次生长缓冲层和非晶硅层；步骤二：加热所述非晶硅层使之温度高于室温，并对所述非晶硅层进行预清洗；步骤三：采用准分子激光束照射步骤二预清洗后的非晶硅层，使所述非晶硅转化为多晶硅。本发明还提供这种多晶硅薄膜的制作系统。本发明通过对低温多晶硅薄膜制作系统、预清洗方法进行改进，改善非晶硅层厚度不均匀的状态，从而提高后续步骤中ELA照射转化形成多晶硅薄膜的均匀性。

Description

说 明 书
低温多晶硅薄膜的预清洗方法及其制备方法、 制作系统 技术领域
本发明属于液晶显示器技术领域， 涉及一种低温多晶硅薄膜的制备方法。 背景技术
随着平板显示器的发展， 对高分辨率、 低能耗的显示面板需求不断增加， 对显示面板的制作材料要求也日益提高。 其中， 低温多晶硅材料被广泛研究。 这种材料可利用非晶硅材料在较低的反应温度下获得， 具有高的电子迁移率， 可用于制作 C-MOS电路而获得高分辨率， 低能耗显示面板的需求。
目前制作低温多晶硅的方法包括固相结晶 （SPC), 金属诱导结晶 （MIC) 和准分子镭射退火 （ELA) 几种， 其中准分子激光束 （ELA) 退火是目前使用 最为广泛的方法。
ELA制作低温多晶硅的方法是： 在玻璃基板上先生长一缓冲层， 然后再在 该缓冲层上生长非晶硅层。 最后利用 ELA的镭射扫描非晶硅层， 使非晶硅受 到高温熔化重结晶形成多晶硅层。 但是， 由于非晶硅成膜的厚度其实是不均匀 的， 这将直接影响到形成多晶硅层的均匀性。 而低温多晶硅的均匀性直接影响 着它的电学性能。 如何能通过低成本、 高效率的方法获得均匀的多晶硅薄膜是 人们亟待解决的。
发明内容
为解决上述问题， 本发明提供一种低温多晶硅薄膜预清洗方法， 加热一非 晶硅层使之温度高于室温， 并对所述非晶硅层进行预清洗。
其中， 加热所述非晶硅层使之温度为 25〜40°C。
将上述预清洗方法运用至低温多晶硅薄的制备中， 包括如下歩骤： 歩骤一： 在基板上从下至上依次生长缓冲层和非晶硅层；
歩骤二： 加热所述非晶硅层使之温度高于室温， 并对所述非晶硅层进行预 清洗；
歩骤三： 采用准分子激光束照射歩骤二预清洗后的非晶硅层， 使所述非晶 硅转化为多晶硅。
进一歩地， 所述歩骤二中所述非晶硅层温度为 25〜40°C。
进一歩地， 所述歩骤二中非晶硅层包括相对厚度大的第一部分， 以及相对 厚度小的第二部分， 所述第一部分的加热温度高于第二部分。
进一歩地， 所述预清洗采用的清洗剂为质量浓度 1〜3%的氢氟酸水溶液。 进一歩地， 所述氢氟酸预清洗的时长为 45〜60s， 用量为 40〜60L/min。 本发明还提供用于实现上述制备方法的低温多晶硅薄膜制作系统，其包括 样品台， 以及
对应设置于所述样品台上方的外延生长装置， 用于在所述样品台上生长非 晶石圭层；
对应设置于所述样品台上方的准分子激光束， 用于将置于所述非晶硅层转 化为多晶硅层； 还包括，
对应设置于所述样品台上方的预清洗装置， 用于对所述非晶硅层进行预清 洗；
装设于所述样品台上的温控装置， 用于所述非晶硅层进行加热。
进一歩地， 所述预清洗装置包括若干个均匀布设的喷淋头。
进一歩地， 所述温控装置包括若干个均匀布设的发热组， 且每个发热组具 有独立的调温器及温度监测器。
进一歩地， 所述发热组为电阻块或电阻丝。
有益效果 本发明通过对低温多晶硅薄膜制作设备、 预清洗方法进行改进， 提高非晶 硅层的均匀性。 本发明的低温多晶硅薄膜制作系统引入温控装置， 配合预清洗 装置， 能根据非晶硅层不用区域的厚薄差异， 控制相应区域的温度高度， 从而 控制厚薄区域实现不同的腐蚀速度， 最终达到縮小不同区域的厚薄差距， 改善 非晶硅层厚度不均匀的状态， 从而提高后续歩骤中 ELA照射转化形成多晶硅 薄膜的均匀性。 附图说明
图 1为本发明低温多晶硅薄膜的制作系统的结构示意图。 图 2 (a) (b) 为本发明温控装置的发热组在样品台上排列结构示意图。 图 3 (a) (b) (c) 为本发明低温多晶硅薄膜的制备流程图。 具体实施方式
下面， 将结合附图对本发明实施例作详细介绍。
本发明提供一种低温多晶硅薄膜的制作系统 100， 如图 1所示， 其至少包 括样品台 10、外延生长装置 20、准分子激光束 30和预清洗装置 40、温控装置 50。 其中， 外延生长装置 20对应设置于所述样品台 10上方， 用于在所述样品台 10 上生长非晶硅层 （图中未示出）， 以及其他形成多晶硅薄膜的必要材料层。
预清洗装置 40对应设置于所述样品台 10上方， 其包括若干个均匀排列的 喷淋头 41， 通过这些喷淋头 41可控地喷出清洗剂， 用于对所述非晶硅材料进 行预清洗。
温控装置 50装设于所述样品台 10上， 用于对所述非晶硅材料进行加热。 一般地， 非晶硅层是在基板 （图中未示出） 上形成的， 因此温控装置 50是对 基板直接加热， 通过基板将热量传递至非晶硅层。 温控装置 50中设置有若干 组均匀布设的发热组 51，且每个发热组 51具有独立的调温器 53和温度监测器 52。 通过温度监测器 52显示每个发热组 51的当前温度， 配合调温器 53可分 别控制和调节各个发热组 51实时温度， 对同一非晶硅层不同区域有针对性地 升温或降温， 实现同一非晶硅层上各个区域温度差别处理。 具体地， 每个发热 组 51可以例如为点状分布在样品台 10上的电阻块 51A或串联电阻块（图中未 示出）， 如图 2 (a) 所示； 又例如， 发热组 51可以为环形绕设于样品台 10上 的电阻丝 51A, 如图 2 (b) 所示。
准分子激光束 30对应设置于所述样品台 10上方， 用于将置于所述样品台 10上的非晶硅材料转化为多晶硅材料。 一般地， 外延生长装置 20、 准分子激 光束 30、 预清洗装置 40是活动装设的， 可以根据制备进程的需要适时调整它 们与样品台 10的对应位置。
下面， 利用上述低温多晶硅薄膜制作系统 100制备多晶硅薄膜， 其包括如 下歩骤：
歩骤一： 如图 3 (a) 所示， 在样品台 10上放置一玻璃基板 60， 然后利用 外延生长装置 20在玻璃基板 60上生长一缓冲层 70，材料为氧化硅。然后在缓 冲层 70上继续生长一非晶硅层 80。该非晶硅层 80表面并非均匀平整，至少包 括相对厚度大的第一区域， 以及相对厚度小的第二区域。 通常表现为中间区域 厚（第一区域）、 边缘区域（第二区域）薄（如图 3 (a)所示）或中间区域（第 二区域） 薄、 边缘区域 （第一区域） 厚的形状 （图中未示出）， 或其他非均匀 分布的形状。
歩骤二： 将歩骤一中获得的非晶硅层 80送入清洗室， 进行高温去氢处理。 然后启动所述温控装置 50加热所述玻璃基板 60， 而从使非晶硅层 80升温。调 整预清洗装置 40位置使之对准所述非晶硅层 80表面， 准备进行预清洗。
一般情况下， 本实施例的预清洗操作是在室温为 23 ±2°C环境下进行。 针 对中间区域厚、 边缘区域薄的非晶硅层 80， 调节温控装置 50每个发热组 51 的实时温度， 使得与中间区域对应的发热组 51加热温度高于室温（25〜40°C )， 边缘区域的发热组 51可不需加热， 使其温度低于室温。 此时打开预清洗装置 40的喷淋头 41， 喷出清洗剂对非晶硅层 80整个表面进行清洗。 本实施例采用 的清洗剂为氢氟酸水溶液， 其中， 氢氟酸的质量浓度为 1〜3%， 设定喷淋头 41 总管路流量为 40〜60L/min， 通过喷淋头 41的喷洒模式喷淋 45〜60S。针对中间 薄边缘厚的非晶硅层也可以参照调整局部区域的加热温度。
氢氟酸作用为刻蚀掉非晶硅表面薄薄一层， 除去表层的杂物及增加表面平 整度。 且氢氟酸刻蚀反应速率与温度相关， 温度高则刻蚀反应快， 温度低则刻 蚀反应慢。 利用这一点， 通过温控装置对非晶硅层不同区域温度的控制， 可实 现对非晶硅层表面平整度进行完善。 例如， 在非晶硅层相对较厚的第一区域调 节发热组提高加热温度， 而在非晶硅层相对较薄的第二区域则降低发热组的加 热温度或停止加热， 可根据非晶硅层实际形状及时匹配， SP， 加热温度高低与 非晶硅层各个区域厚薄程度成正比关系。 如此， 非晶硅层厚度大的第一区域刻 蚀速度较快，厚度小的第二区域刻蚀速度较慢，不断縮小不同区域的厚薄差距， 从而改善非晶硅层厚度不均匀的状态， 达到提高非晶硅层表面平整性的目的， 从而为后续歩骤中获得平整、 均匀的多晶硅层提供保障。
歩骤三： 经过歩骤二预清洗后、具有均匀平整表面的非晶硅层 81， 采用准 分子激光束 30扫射， 如图 3 (b) 所示， 使所述非晶硅转化为多晶硅， 从而获 得均匀、 平整的多晶硅薄膜 90， 如图 3 (c) 所示。 本发明提供的低温多晶硅薄膜制作系统， 设备容易改装和控制； 利用该系 统制备多晶硅薄膜， 方法简单、 便捷， 有效提高了多晶硅薄膜的平整性， 保证 了所制作的元器件的品质和性能

Claims

权利要求书
1、 一种低温多晶硅薄膜的预清洗方法， 其中， 其包括加热一非 晶硅层使之温度高于室温， 并对所述非晶硅层进行预清洗。
2、 根据权利要求 1所示低温多晶硅薄膜的预清洗方法， 其中， 加热所述非晶硅层使之温度为 25~40°C。
3、 一种低温多晶硅薄膜的制备方法， 其中， 包括如下步骤： 步骤一： 在基板上从下至上依次生长缓冲层和非晶硅层； 步骤二：加热所述非晶硅层使之温度高于室温，并对所述非晶硅 层进行预清洗；
步骤三：采用准分子激光束照射步骤二预清洗后的非晶硅层，使 所述非晶硅转化为多晶硅。
4、 根据权利要求 3所述的制备方法， 其中， 所述步骤二中所述 非晶硅层温度为 25 0°C。
5、 根据权利要求 4所述的制备方法， 其中， 所述步骤二中非晶 硅层包括相对厚度大的第一区域， 以及相对厚度小的第二区域， 所述 第一区域的温度高于第二区域。
6、 根据权利要求 3所述的制备方法， 其中， 所述预清洗采用的 清洗剂为质量浓度 1~3%的氢氟酸水溶液。
7、 根据权利要求 5所述的制备方法， 其中， 所述氢氟酸预清洗 的时长为 45~60s, 用量为 40~60L/min。
8、 一种如权利要求 3所述低温多晶硅薄膜的制作系统，其包括 样品台， 以及
对应设置于所述样品台上方的外延生长装置，用于在所述样品台 上生长非晶硅层；
对应设置于所述样品台上方的准分子激光束，用于将置于所述非 晶硅层转化为多晶硅层； 其中， 还包括，
对应设置于所述样品台上方的预清洗装置，用于对所述非晶硅层 进行预清洗；
6
更正页 （细则第 91条) 装设于所述样品台上的温控装置， 用于所述非晶硅层进行加热。
9、 根据权利要求 8所述制作低温多晶硅薄膜的系统， 其中， 所 述预清洗装置包括若干个均匀布 的喷淋头。
10、 根据权利要求 8所述制作低温多晶硅薄膜的系统， 其中， 所述温控装置包括若干个均匀布设的发热组，且每个发热组具有独立 的调温器及温度监测器。
11、 根据权利要求 10所述制作低温多晶硅薄膜的系统， 其中， 所述发热组为电阻块或电阻丝。
更正页 （细则第 91条)
PCT/CN2013/090627 2013-12-25 2013-12-27 低温多晶硅薄膜的预清洗方法及其制备方法、制作系统 Ceased WO2015096113A1 (zh)

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