RU2016124648A - Способ предварительной очистки и способ получения тонкой пленки низкотемпературного поликремния, жидкокристаллическое устройство отображения и система для ее изготовления - Google Patents

Способ предварительной очистки и способ получения тонкой пленки низкотемпературного поликремния, жидкокристаллическое устройство отображения и система для ее изготовления Download PDF

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RU2016124648A
RU2016124648A RU2016124648A RU2016124648A RU2016124648A RU 2016124648 A RU2016124648 A RU 2016124648A RU 2016124648 A RU2016124648 A RU 2016124648A RU 2016124648 A RU2016124648 A RU 2016124648A RU 2016124648 A RU2016124648 A RU 2016124648A
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amorphous silicon
temperature
low
thin film
layer
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RU2016124648A
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RU2647561C2 (ru
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Лунсянь ЧЖАН
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Шэньчжэнь Чайна Стар Оптоэлектроникс Текнолоджи Ко., Лтд.
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Claims (20)

1. Способ предварительной очистки тонкой пленки низкотемпературного поликремния, который включает: нагрев слоя аморфного кремния до температуры выше комнатной и выполнение предварительной очистки поверхности слоя аморфного кремния.
2. Способ предварительной очистки тонкой пленки низкотемпературного поликремния по п. 1, отличающийся тем, что нагрев слоя аморфного кремния доводит температуру слоя аморфного кремния до 25°-40°.
3. Способ получения тонкой пленки низкотемпературного поликремния, который включает:
этап 1: выращивание буферного слоя и затем слоя аморфного кремния на подложке;
этап 2: нагрев слоя аморфного кремния до температуры выше комнатной и выполнение предварительной очистки поверхности слоя аморфного кремния;
этап 3: использование отжига эксимерным лазером (ELA) для облучения предварительно очищенного слоя аморфного кремния на этапе 2, чтобы преобразовать аморфный кремний в поликремний.
4. Способ получения тонкой пленки низкотемпературного поликремния по п. 3, отличающийся тем, что температура слоя аморфного кремния на этапе 2 составляет 25°-40°.
5. Способ получения тонкой пленки низкотемпературного поликремния по п. 4, отличающийся тем, что слой аморфного кремния на этапе 2 включает первую часть относительно большей толщины и вторую часть относительно меньшей толщины, и температура нагрева первой части выше температуры нагрева второй части.
6. Способ получения тонкой пленки низкотемпературного поликремния по п. 3, отличающийся тем, что очиститель, применяемый для предварительной очистки, является водным раствором плавиковой кислоты в концентрации 1-3%.
7. Способ получения тонкой пленки низкотемпературного поликремния по п. 5, отличающийся тем, что плавиковую кислоту применяют в течение 45-60 с при расходе 40-60 литров в минуту (л/мин) в ходе предварительной очистки.
8. Система для изготовления тонкой пленки низкотемпературного поликремния, которая включает:
рабочий стол;
аппарат для эпитаксиального выращивания, расположенный над рабочим столом и приспособленный для обеспечения выращивания слоя аморфного кремния;
эксимерный лазер, расположенный над рабочим столом, предназначенный для преобразования слоя аморфного кремния в слой поликремния; а также включающая:
аппарат для предварительной очистки, расположенный над рабочим столом и предназначенный для выполнения предварительной очистки слоя аморфного кремния, и
устройство для регулировки температуры, расположенное на рабочем столе и предназначенное для выполнения нагрева слоя аморфного кремния.
9. Система для изготовления тонкой пленки низкотемпературного поликремния по п. 8, отличающаяся тем, что аппарат для предварительной очистки включает несколько равномерно распределенных форсунок.
10. Система для изготовления тонкой пленки низкотемпературного поликремния по п. 8, отличающаяся тем, что устройство для регулировки температуры включает несколько равномерно распределенных
средств нагрева, и каждое из средств нагрева включает независимые термостат и устройство для контроля температуры.
11. Система для изготовления тонкой пленки низкотемпературного поликремния по п. 10, отличающаяся тем, что средством нагрева является блок сопротивления или провод высокого сопротивления.
RU2016124648A 2013-12-25 2013-12-27 Способ предварительной очистки и способ получения тонкой пленки низкотемпературного поликремния, жидкокристаллическое устройство отображения и система для ее изготовления RU2647561C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201310728592.4A CN103681244B (zh) 2013-12-25 2013-12-25 低温多晶硅薄膜的制备方法及其制作系统
CN201310728592.4 2013-12-25
PCT/CN2013/090627 WO2015096113A1 (zh) 2013-12-25 2013-12-27 低温多晶硅薄膜的预清洗方法及其制备方法、制作系统

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RU2016124648A true RU2016124648A (ru) 2017-12-26
RU2647561C2 RU2647561C2 (ru) 2018-03-16

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US (1) US9287108B2 (ru)
JP (1) JP6286547B2 (ru)
KR (1) KR101944598B1 (ru)
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CN103681244A (zh) 2014-03-26
DE112013007733T5 (de) 2017-01-12
KR20160088405A (ko) 2016-07-25
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WO2015096113A1 (zh) 2015-07-02
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