WO2011105830A3 - 다결정 실리콘층 제조방법 및 이를 위한 금속 혼입층 형성장치 - Google Patents

다결정 실리콘층 제조방법 및 이를 위한 금속 혼입층 형성장치 Download PDF

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Publication number
WO2011105830A3
WO2011105830A3 PCT/KR2011/001296 KR2011001296W WO2011105830A3 WO 2011105830 A3 WO2011105830 A3 WO 2011105830A3 KR 2011001296 W KR2011001296 W KR 2011001296W WO 2011105830 A3 WO2011105830 A3 WO 2011105830A3
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WO
WIPO (PCT)
Prior art keywords
silicon layer
polycrystalline silicon
producing
layer
forming
Prior art date
Application number
PCT/KR2011/001296
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English (en)
French (fr)
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WO2011105830A2 (ko
Inventor
이병일
장희섭
박경완
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100018211A external-priority patent/KR101120045B1/ko
Priority claimed from KR1020100033517A external-priority patent/KR101129035B1/ko
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to JP2012554931A priority Critical patent/JP2013520832A/ja
Priority to CN2011800102300A priority patent/CN102770946A/zh
Publication of WO2011105830A2 publication Critical patent/WO2011105830A2/ko
Publication of WO2011105830A3 publication Critical patent/WO2011105830A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)

Abstract

다결정 실리콘층 제조 방법이 개시된다. 본 발명에 일 실시예에 따른 다결정 실리콘층(22) 제조 방법은 비정질 실리콘층(20)과 금속 혼입층(metal mixed layer; 30)을 컨택한 후에 비정질 실리콘층(20)을 결정화 열처리 하여 다결정 실리콘층(22)을 제조하는 것을 특징으로 한다. 본 발명에 의하면, 금속 촉매의 양을 적게 도입하면서도 결정화 온도를 낮출 수 있는 다결정 실리콘층 제조 방법을 제공할 수 있게 된다.
PCT/KR2011/001296 2010-02-26 2011-02-24 다결정 실리콘층 제조방법 및 이를 위한 금속 혼입층 형성장치 WO2011105830A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012554931A JP2013520832A (ja) 2010-02-26 2011-02-24 多結晶シリコン層の製造方法及びこのための金属混入層形成装置
CN2011800102300A CN102770946A (zh) 2010-02-26 2011-02-24 多晶硅层的制造方法及用于其的金属混合层形成装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020100018211A KR101120045B1 (ko) 2010-02-26 2010-02-26 다결정 실리콘층 제조 방법
KR10-2010-0018211 2010-02-26
KR1020100033517A KR101129035B1 (ko) 2010-04-12 2010-04-12 금속 혼입층 형성장치
KR10-2010-0033517 2010-04-12

Publications (2)

Publication Number Publication Date
WO2011105830A2 WO2011105830A2 (ko) 2011-09-01
WO2011105830A3 true WO2011105830A3 (ko) 2012-02-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/001296 WO2011105830A2 (ko) 2010-02-26 2011-02-24 다결정 실리콘층 제조방법 및 이를 위한 금속 혼입층 형성장치

Country Status (4)

Country Link
JP (1) JP2013520832A (ko)
CN (1) CN102770946A (ko)
TW (1) TW201214523A (ko)
WO (1) WO2011105830A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465319B (zh) * 2014-10-30 2017-07-28 深圳市华星光电技术有限公司 低温多晶硅的制作方法及tft基板的制作方法
CN105624645B (zh) * 2014-11-06 2018-04-24 中微半导体设备(上海)有限公司 反应气体输送装置及化学气相沉积或外延层生长反应器
KR101959754B1 (ko) * 2018-02-27 2019-03-19 한국과학기술원 비냉각형 적외선 센서용 감지막 형성방법과 그에 따라 형성된 비냉각형 적외선 센서용 감지막 및 비냉각형 적외선 센서 제조방법과 그에 따라 제조된 적외선 센서
JP7208779B2 (ja) * 2018-12-11 2023-01-19 キオクシア株式会社 基板処理装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100203000B1 (ko) * 1994-12-28 1999-06-15 다니구찌 이찌로오, 기타오카 다카시 화학 증착에 의한 박막 형성 장치 및 방법
KR100271082B1 (ko) * 1994-10-20 2000-11-01 야마자끼 순페이 반도체장치 제작방법
KR20020089341A (ko) * 2000-02-04 2002-11-29 아익스트론 아게 기재상에 하나 이상의 층을 증착하기 위한 장치와 방법
KR20040070979A (ko) * 2003-02-05 2004-08-11 장 진 덮개층을 이용한 다결정 실리콘 박막 소자 제조 방법
KR20040104527A (ko) * 2002-03-22 2004-12-10 아익스트론 아게 기판의 코팅방법과 이 방법을 수행하기 위한 장치
KR20060015183A (ko) * 2004-08-13 2006-02-16 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
KR20090016232A (ko) * 2007-08-10 2009-02-13 주성엔지니어링(주) 박막증착을 위한 플라즈마 공정장치 및 이를 이용한미세결정질 실리콘 박막의 증착방법
KR20090069808A (ko) * 2007-12-26 2009-07-01 재단법인서울대학교산학협력재단 금속 유도 수직 결정화를 이용한 비정질 실리콘 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100271082B1 (ko) * 1994-10-20 2000-11-01 야마자끼 순페이 반도체장치 제작방법
KR100203000B1 (ko) * 1994-12-28 1999-06-15 다니구찌 이찌로오, 기타오카 다카시 화학 증착에 의한 박막 형성 장치 및 방법
KR20020089341A (ko) * 2000-02-04 2002-11-29 아익스트론 아게 기재상에 하나 이상의 층을 증착하기 위한 장치와 방법
KR20040104527A (ko) * 2002-03-22 2004-12-10 아익스트론 아게 기판의 코팅방법과 이 방법을 수행하기 위한 장치
KR20040070979A (ko) * 2003-02-05 2004-08-11 장 진 덮개층을 이용한 다결정 실리콘 박막 소자 제조 방법
KR20060015183A (ko) * 2004-08-13 2006-02-16 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
KR20090016232A (ko) * 2007-08-10 2009-02-13 주성엔지니어링(주) 박막증착을 위한 플라즈마 공정장치 및 이를 이용한미세결정질 실리콘 박막의 증착방법
KR20090069808A (ko) * 2007-12-26 2009-07-01 재단법인서울대학교산학협력재단 금속 유도 수직 결정화를 이용한 비정질 실리콘 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법

Also Published As

Publication number Publication date
CN102770946A (zh) 2012-11-07
WO2011105830A2 (ko) 2011-09-01
TW201214523A (en) 2012-04-01
JP2013520832A (ja) 2013-06-06

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