WO2015060173A1 - Pâte d'argent et dispositif à semi-conducteurs l'utilisant - Google Patents

Pâte d'argent et dispositif à semi-conducteurs l'utilisant Download PDF

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WO2015060173A1
WO2015060173A1 PCT/JP2014/077441 JP2014077441W WO2015060173A1 WO 2015060173 A1 WO2015060173 A1 WO 2015060173A1 JP 2014077441 W JP2014077441 W JP 2014077441W WO 2015060173 A1 WO2015060173 A1 WO 2015060173A1
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silver
silver paste
particles
silver particles
mass
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PCT/JP2014/077441
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English (en)
Japanese (ja)
Inventor
石川　大
祐貴 川名
松本　博
名取　美智子
偉夫 中子
田中　俊明
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日立化成株式会社
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Priority to JP2015543808A priority Critical patent/JP6900148B2/ja
Publication of WO2015060173A1 publication Critical patent/WO2015060173A1/fr

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    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/105—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/732—Location after the connecting process
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Definitions

  • the present invention relates to a silver paste and a semiconductor device using the same. More specifically, a silver paste used for bonding semiconductor elements such as power semiconductors, LSIs, and light emitting diodes (LEDs) to support members such as lead frames, ceramic wiring boards, glass epoxy wiring boards, polyimide wiring boards, and the like
  • the present invention relates to a semiconductor device using.
  • a semiconductor element and a support member are bonded to each other by mixing a binder resin such as an epoxy resin and a polyimide resin, a filler such as silver powder, a solvent composition, etc. Is used as an adhesive.
  • a binder resin such as an epoxy resin and a polyimide resin
  • a filler such as silver powder, a solvent composition, etc.
  • the semiconductor element is die-bonded and bonded by heat sintering to the semiconductor device.
  • the characteristics required for the silver paste are broadly classified into the contents relating to the construction method at the time of bonding and the contents relating to the physical properties of the silver sintered body after bonding.
  • the contents related to the construction method at the time of bonding are required to be able to bond at low temperature (for example, about 300 ° C.) and low pressure (for example, about 0.1 MPa) or no pressure in order to prevent damage to the semiconductor member.
  • low temperature for example, about 300 ° C.
  • low pressure for example, about 0.1 MPa
  • no pressure for example, about 0.1 MPa
  • shortening the time required for adhesion is required from the viewpoint of improving throughput.
  • high adhesion high die shear strength
  • the high heat dissipation characteristic (high thermal conductivity) of a silver sintered compact is also calculated
  • the heat resistance and high density of the silver sintered body are required.
  • Patent Documents 1 to 4 As a conventional silver paste, for example, a silver paste in which silver particles and a solvent are mixed as disclosed in Patent Documents 1 to 4 has been proposed.
  • the problem with the conventional silver paste is that it does not necessarily satisfy all of the adhesive strength, conductivity and thermal conductivity.
  • the present invention is excellent in a balanced manner in all of adhesive strength, conductivity, and thermal conductivity even when sintered at low temperature and low pressure (or no pressure).
  • An object is to provide a silver paste and a semiconductor device using the same.
  • the present invention relates to plate-like silver particles having a center line average surface roughness Ra of 1 nm or less, silver particles having a center line average surface roughness Ra of 2 nm to 20 nm, and a particle diameter of 1 ⁇ m to 20 ⁇ m, And a silver paste containing a solvent.
  • the centerline average surface roughness Ra of the plate-like silver particles is preferably 0.5 nm or less.
  • the plate-like silver particles are single crystals.
  • the ratio of the maximum length a in the thickness direction and the maximum length b in the plane direction of the plate-like silver particles satisfies 2 ⁇ b / a.
  • the maximum length a in the thickness direction and the maximum length b in the plane direction of the plate-like silver particles satisfy a ⁇ 500 nm and 100 nm ⁇ b ⁇ 10000 nm, respectively.
  • the content of silver particles having a particle diameter of 1 ⁇ m to 20 ⁇ m is desirably 80% by mass or less based on the total amount of silver particles.
  • the silver paste preferably further contains spherical silver particles having a particle diameter of 0.01 ⁇ m or more and less than 1 ⁇ m.
  • the silver paste includes Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd. , Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, and metal or metalloid particles containing at least one selected from the group consisting of Bi on the basis of the total amount of silver paste. It is desirable to contain 01 to 5.0% by mass.
  • the present invention provides a semiconductor device having a structure in which a semiconductor element and a semiconductor element mounting support member are bonded to each other through a sintered body obtained by sintering the silver paste.
  • a silver paste excellent in balance in all of adhesive strength, conductivity and thermal conductivity and the use thereof are used.
  • a semiconductor device can be provided.
  • 4 is a SEM photograph of a connection cross section of the semiconductor member of Example 1.
  • 4 is a SEM photograph of a connection cross section of a semiconductor member of Example 2.
  • 4 is a SEM photograph of a connection cross section of a semiconductor member of Example 3.
  • 4 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 1.
  • 4 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 2.
  • 10 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 3.
  • 10 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 4; 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device according to the present invention. It is a schematic cross section which shows other embodiment of the semiconductor device which concerns on this invention.
  • the silver paste according to the present embodiment has plate-like silver particles (hereinafter also referred to as “silver particles A”) having a center line average surface roughness Ra of 1 nm or less, and a center line average surface roughness Ra of 2 nm to It contains silver particles (hereinafter also referred to as “silver particles B”) having a diameter of 20 nm and a particle diameter of 1 ⁇ m to 20 ⁇ m, and a solvent.
  • silver particles A plate-like silver particles having a center line average surface roughness Ra of 1 nm or less, and a center line average surface roughness Ra of 2 nm to It contains silver particles (hereinafter also referred to as “silver particles B”) having a diameter of 20 nm and a particle diameter of 1 ⁇ m to 20 ⁇ m, and a solvent.
  • the silver particles A used in the present embodiment are plate-shaped, and are silver particles having a center line average surface roughness Ra of 1 nm or less.
  • the Ra of the silver particles A is desirably 0.5 nm or less, and more desirably 0.1 nm or less.
  • the “plate shape” means a shape in which the aspect ratio (particle diameter / thickness) of silver particles is in the range of 2 to 1000.
  • Center line average surface roughness in this specification is also called “arithmetic average roughness” and means “arithmetic average roughness” defined in JIS B0601: 2001.
  • a method of measuring the center line average surface roughness Ra of the silver particles a BET method, a brain method, a method using an atomic force microscope (AFM), which is a method for obtaining from a specific surface area, a laser-type microscope is used.
  • a known method such as a method to be used may be used.
  • the particle diameter of the silver particles A is not particularly limited, but is preferably 1 to 20 ⁇ m, more preferably 1 to 10 ⁇ m, and still more preferably 1 to 5 ⁇ m.
  • the particle diameter of a silver particle be a square root of the area of a silver particle when silver particle is planarly viewed using SEM, for example.
  • the ratio of the maximum length a in the thickness direction to the maximum length b in the plane direction of the silver particles A preferably satisfies 2 ⁇ b / a, more preferably satisfies 5 ⁇ b / a, and 10 ⁇ b. It is further desirable to satisfy / a.
  • b / a satisfies the above conditions, an adhesive area between the silver paste and the adherend surface can be secured, and the adhesive strength can be further improved.
  • a and b preferably satisfy a ⁇ 500 nm and 100 nm ⁇ b ⁇ 10000 nm, respectively, more preferably satisfy a ⁇ 300 nm and 300 nm ⁇ b ⁇ 6000 nm, and satisfy a ⁇ 100 nm and 500 nm ⁇ b ⁇ 3000 nm. It is more desirable to satisfy.
  • b satisfies the above-mentioned conditions, it can be suitably used when forming a thin-film silver sintered body.
  • a can be set to a ⁇ 10 nm, for example.
  • the silver particles A are preferably single crystals.
  • a method for producing silver particles A which are single crystals for example, JP 2012-167378 A, Benjamin Wiley et al., NANO LETTERS, Vol. , 4, No. 9, 1733-1739, 2004, Ryusuke Kamiyama et al., Journal of the Ceramic Society of Japan, 107, [1], 60-65, 1999 may be used.
  • the content of silver particles A is preferably 20% by mass or more, more preferably 50% by mass or more, and further preferably 70% by mass or more based on the total amount of silver particles. Further, the content of the silver particles A is desirably 99% by mass or less, more desirably 95% by mass or less, and further desirably 90% by mass or less.
  • the silver paste according to this embodiment contains silver particles B having a center line average surface roughness Ra of 2 nm to 20 nm and a particle diameter of 1 ⁇ m to 20 ⁇ m.
  • the silver particles B plate-like silver particles can be used.
  • the center line average surface roughness Ra of the silver particles B is 2 nm to 20 nm, preferably 2 nm to 15 nm, and more preferably 2 nm to 10 nm.
  • the particle diameter of the silver particles B is 1 to 20 ⁇ m, preferably 1 to 15 ⁇ m, and more preferably 1 to 10 ⁇ m.
  • the content of silver particles B is preferably 5% by mass or more, more preferably 10% by mass or more, and still more preferably 20% by mass or more based on the total amount of silver particles.
  • the content of the silver particles B is desirably 80% by mass or less, more desirably 75% by mass or less, and further desirably 70% by mass or less, based on the total amount of silver particles.
  • the electrical conductivity and thermal conductivity can be particularly improved.
  • the silver paste according to the present embodiment may further contain silver particles other than the silver particles A and the silver particles B.
  • the silver paste further contains spherical silver particles having a particle diameter of 0.01 ⁇ m or more and less than 1 ⁇ m. It may be.
  • spherical silver particles having a particle diameter of 0.01 ⁇ m or more and less than 1 ⁇ m it is possible to further improve the packing property between the silver particles and improve the density of the formed silver sintered body.
  • the physical properties of the silver sintered body can be made close to that of bulk silver.
  • the surface of silver particles is usually covered with organic matter.
  • this organic substance is referred to as a protective agent.
  • the desorption temperature of the protective agent in the silver particles used in this embodiment is desirably 300 ° C. or less, more desirably 250 ° C. or less, and further desirably 230 ° C. or less.
  • the desorption temperatures of the protective agents of the respective silver particles are close.
  • the difference in the desorption temperature of the protective agent for each silver particle is preferably within 50 ° C., and preferably within 30 ° C.
  • the desorption temperature of the silver particle protective agent can be determined by performing differential thermal-thermogravimetric simultaneous measurement (Thermogravimetry-Differential Thermal Analysis; TG-DTA) in the atmosphere.
  • TG-DTA differential thermal-thermogravimetric simultaneous measurement
  • the amount of the protective agent in the silver particles is preferably such that the mass of the protective agent: the mass of the silver particles is 0.1: 99.9 to 20:80. It becomes easy to fully coat
  • the amount of the protective agent is not more than the above upper limit value, the degree of volume shrinkage when the silver particles are sintered can be suppressed. As a result, the density of the silver sintered body can be ensured.
  • a carboxylic acid compound can be particularly preferably used, and an aliphatic monocarboxylic acid having 2 to 20 carbon atoms is more preferable.
  • the amount of silver particles in the silver paste can be appropriately determined according to the viscosity and thixotropy of the target silver paste.
  • the silver particles are desirably 80% by mass or more based on the total amount of the silver paste.
  • the silver paste according to the present embodiment includes Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, and other metal elements or metalloid elements other than silver. Contains at least one element selected from Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, and Bi It may be.
  • These elements improve the adhesive strength between the silver paste and the specific deposited metal, achieve low-temperature adhesion by adding low melting point elements, improve the mechanical properties of the silver sintered body, and sulfidation resistance of the silver sintered body Depending on the purpose of imparting properties, the type is appropriately selected and added.
  • the content of these elements is preferably 0.01 to 5.0% by mass based on the total amount of silver paste. When it is 0.01% by mass or more, a desired effect is easily obtained. Further, when the content is 5.0% by mass or less, inhibition of sintering of the silver paste and deterioration of properties such as adhesive strength, thermal conductivity, and electrical conductivity of the silver sintered body can be suppressed.
  • These elements are desirably contained in the form of particles in order to be mixed with silver particles to form a silver paste, and the particle diameter is desirably 0.01 to 10 ⁇ m.
  • the surface of base metal elements and metalloid elements is usually oxidized, and even if added to the silver paste as it is, there is a possibility that sufficient effects cannot be obtained. Therefore, it is desirable to add flux together with these elements.
  • a known type of flux can be used, and the amount of flux may be appropriately selected.
  • a method of using particles whose surfaces are silver-plated as particles containing the above-described elements can be used. Use of silver-plated particles improves the oxidation resistance during storage and sintering of the silver paste.
  • commercially available particles may be used, or particles prepared by a known method may be used.
  • the solvent in the present embodiment is not particularly limited, and a known solvent can be used.
  • Solvents can be selected from alcohols, aldehydes, carboxylic acids, ethers, esters, amines, monosaccharides, polysaccharides, linear hydrocarbons, fatty acids, aromatics, etc. It is also possible to use a plurality of solvents in combination. It is desirable to select a solvent suitable for the dispersion of silver particles from the above.
  • the solvent having an alcohol structure, an ether structure, or an ester structure is a thermal conductivity of the sintered silver body after sintering, This is particularly desirable from the viewpoint that the conductivity and the adhesive strength can be further improved.
  • the boiling point of the solvent is not particularly limited, but is preferably 100 ° C to 350 ° C. It is desirable that the solvent does not evaporate and remain in the silver sintered body in the temperature range where the semiconductor element is connected to the support member. When the boiling point of the solvent is 100 ° C. or higher, the solvent can be prevented from evaporating even at room temperature when the silver paste is used. Further, when the boiling point of the solvent is 350 ° C. or less, it is easy to evaporate the solvent at the temperature at which the semiconductor element is connected, and it can be suppressed that the solvent remains in the silver sintered body and the characteristics of the silver sintered body are deteriorated.
  • organic components other than the solvent may be added as additives.
  • the additive include an anti-settling agent for silver particles in the paste, a flux agent for promoting the sintering of silver particles, and the like.
  • the additive is preferably removed from the system at a temperature at which the silver paste is sintered.
  • the amount of the solvent in the silver paste is preferably less than 20% by mass based on the total amount of the silver paste.
  • the solvent is less than 20% by mass, volume shrinkage due to evaporation of the solvent when the silver paste is sintered can be suppressed, and the denseness of the formed silver sintered body can be secured.
  • the silver particles and the solvent, together with various additives to be added as necessary are collectively or divided into a stirrer, a raid device, a three roll, a planetary mixer.
  • the dispersing / dissolving devices such as the above may be appropriately combined, and heated, if necessary, mixed, dissolved, granulated and kneaded or dispersed to form a uniform paste.
  • the method for heating and sintering the silver paste a known method can be used. In addition to external heating by a heater, an ultraviolet lamp, laser, microwave, or the like can be suitably used.
  • the heating temperature of the silver paste is preferably equal to or higher than the temperature at which organic components such as solvents and additives in the silver paste are desorbed from the system. Specifically, the range of the heating temperature is desirably 150 ° C. or more and 300 ° C. or less, and more desirably 150 ° C. or more and 250 ° C. or less.
  • a general semiconductor member is connected by setting the heating temperature to 300 ° C. or less, damage to the member can be avoided, and by removing the protective agent by setting the heating temperature to 150 ° C. or more. Is likely to occur.
  • the heating time of the silver paste may be a time at which desorption of organic substances such as a protective agent and a solvent is completed at a set temperature.
  • An appropriate range of heating temperature and heating time can be estimated by performing TG-DTA measurement of the silver paste.
  • the process for heating the silver paste can be appropriately determined.
  • sintering is performed at a temperature exceeding the boiling point of the solvent, pre-heating at a temperature lower than the boiling point of the solvent, and after performing the sintering after volatilizing the solvent to some extent, a denser silver sintered body Easy to get.
  • the rate of temperature increase when heating the silver paste is not particularly limited when sintering is performed below the boiling point of the solvent. In the case of sintering at a temperature exceeding the boiling point of the solvent, it is desirable to set the heating rate to 1 ° C./second or less, or to perform a preheating step.
  • the silver sintered body obtained by sintering the silver paste as described above has a volume resistivity of 1 ⁇ 10 ⁇ 5 ⁇ ⁇ cm or less, a thermal conductivity of 30 W / m ⁇ K or more, and 65% or more. It is desirable to have a denseness.
  • the adhesive strength of the silver sintered body obtained by sintering the silver paste as described above is desirably 10 MPa or more, and more desirably 15 MPa or more.
  • the semiconductor device according to this embodiment is obtained by bonding a semiconductor element and a semiconductor element mounting support member to each other through a sintered body obtained by sintering the silver paste according to this embodiment.
  • FIG. 12 is a schematic cross-sectional view showing an example of the semiconductor device according to the present embodiment.
  • the semiconductor device 10 includes a lead frame 2a, lead frames (heat radiating bodies) 2b and 2c, and a sintered body 3 of silver paste according to the present embodiment as a semiconductor element mounting support member. And a semiconductor element 1 connected to the lead frame 2a, and a mold resin 5 for molding them.
  • the semiconductor element 1 is connected to lead frames 2b and 2c through two wires 4, respectively.
  • FIG. 13 is a schematic cross-sectional view showing another example of the semiconductor device according to the present embodiment.
  • the semiconductor device 20 includes a substrate 6, a lead frame 7 which is a semiconductor element mounting support member formed so as to surround the substrate 6, and the silver paste sintered body 3 according to the present embodiment.
  • LED chip 8 which is a semiconductor element connected on lead frame 7 via, and translucent resin 9 which seals these.
  • the LED chip 8 is connected to the lead frame 7 via the wire 4.
  • a silver paste is applied onto a semiconductor element mounting support member by a dispensing method, a screen printing method, a stamping method, etc., the semiconductor element is mounted on the portion where the silver paste is applied, and a heating device is installed.
  • the semiconductor element and the semiconductor element mounting support member can be bonded to each other.
  • a semiconductor device is obtained by performing a wire bonding process and a sealing process after sintering the silver paste.
  • a lead frame such as a 42 alloy lead frame, a copper lead frame, a palladium PPF lead frame, a glass epoxy substrate (a substrate made of glass fiber reinforced epoxy resin), a BT substrate (cyanate monomer and its component) And an organic substrate such as a BT resin-containing substrate made of an oligomer and bismaleimide.
  • the surface roughness of silver particles was measured by dynamic force mode (DFM) using AFM (SII Nanotechnology, SPI4000). Specifically, about 10 mg of silver particles was added to 10 mL of acetone to prepare a dispersion. About 100 ⁇ L of the dispersion was dropped on a circular sample grid having a diameter of 2 cm and dried at 25 ° C. for about 24 hours to obtain a measurement sample. The sample grid was set in AFM (SII Nanotechnology, SPI4000), and measurement was performed with DFM. A visual field range including a plurality of silver particles was used as a scanning target, and a surface shape image of the silver particles was obtained. This operation was repeated to obtain surface shape images of 10 to 20 silver particles. About the surface shape image of each obtained silver particle, surface roughness analysis was performed with respect to the length of about 90% of the maximum particle diameter. The average value of the obtained surface roughness was calculated, and the average value was defined as the center line average surface roughness of the silver particles.
  • DFM dynamic force mode
  • the silver paste is preheated at 110 ° C. for 10 minutes with a hot plate (SHEIMAL HOT-LATE HHP-401) and further heated at 200 ° C. for 1 hour to obtain a silver sintered body (about 10 mm ⁇ 10 mm). ⁇ 1 mm) was obtained.
  • the thermal diffusivity of this silver sintered body was measured by a laser flash method (Netch, LFA 447, measurement temperature 25 ° C.), and further obtained by this thermal diffusivity and a differential scanning calorimeter (Perkin Elmer, Pyris 1). From the product of specific heat capacity and sintering density, the thermal conductivity [W / m ⁇ K] of the silver sintered body at 25 ° C. was calculated.
  • A 100 W / m ⁇ K or more
  • B 80 W / m ⁇ K or more and less than 100 W / m ⁇ K
  • C 0 W / m ⁇ K or more and less than 80 W / m ⁇ K
  • volume resistivity A silver paste is applied on a glass plate, preheated at 110 ° C. for 10 minutes by a hot plate (Seihei Inai, SHAMAL HOTPLATE HHP-401), and further heated at 200 ° C. for 1 hour, A 1 ⁇ 50 ⁇ 0.03 mm silver sintered body was obtained on the plate.
  • the volume resistivity [ ⁇ ⁇ cm] of this silver sintered body was measured by a four-terminal method (Advantest Corporation, R687E DIGITAL MULTITIMER). The evaluation results are described using A, B, and C according to the following criteria.
  • Platinum was deposited on the polished sample with an ion sputtering device (Hitachi High-Technologies Corporation, E1045), and this was scanned with a desktop scanning electron microscope (JEOL Ltd., NeoScope JCM-5000) with an electron acceleration voltage of 10 kV and a magnification of 5000 times. And SEM photographs were taken.
  • silver pastes were produced as follows.
  • silver particles LM1 (Tokusen Kogyo Co., Ltd.), AgC239 (Fukuda Metal Foil Co., Ltd.), AgC212D (Fukuda Metal Foil Co., Ltd.), TC-20E-L (Tokuroku Chemical Co., Ltd.) used in each Example and Comparative Example Table 1 shows the properties of (Research Institute), AgS050 (Tokuriku Chemical Laboratory), C-34 (Tokuriku Chemical Laboratory).
  • SEM photographs of LM1, AgC239, AgC212D, and TC-20E-L are shown in FIGS.
  • Table 2 shows the types and amounts of silver particles and other particles (particles other than silver) in Examples 1 to 22 and Comparative Examples 1 to 4.
  • Example 1 75 parts by mass of LM1 (Tokusen Kogyo Co., Ltd.) and 25 parts by mass of AgC239 (Fukuda Metal Foil Co., Ltd.) as silver particles, 13.6 parts by mass of terpineol (Wako Pure Chemical Industries, Ltd., isomer mixture), stearin as additive 1 part by mass of acid (New Nippon Rika Co., Ltd.) was used.
  • the silver particles, the solvent, and the additive were kneaded for 15 minutes with a screening machine to prepare a silver paste.
  • the properties of this silver paste are shown in Table 3.
  • photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .
  • Example 2 A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC239 were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image
  • Example 3 A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC239 were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image
  • Example 4 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Al particles (Alfa Aeser) was further added. The properties of this silver paste are shown in Table 3.
  • Example 5 A silver paste was prepared in the same procedure as in Example 1, except that 1 part by mass of Si particles (High Purity Chemical Research Laboratory) was used. The properties of this silver paste are shown in Table 3.
  • Example 6 A silver paste was prepared in the same procedure as in Example 1 except for 1 part by mass of Ti particles (Wako Pure Chemical Industries, Ltd.). The properties of this silver paste are shown in Table 3.
  • Example 7 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of V particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 8 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Mn particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 9 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Fe particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 10 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Co particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 11 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Ni particles (METAL FOIL & POWDERS MFG CO., Ni-HWQ) was further added. The properties of this silver paste are shown in Table 3.
  • Example 12 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Zn particles (Alfa Aeser) was further added. The properties of this silver paste are shown in Table 3.
  • Example 13 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Pd particles (Alfa Aeser) was further added. The properties of this silver paste are shown in Table 3.
  • Example 14 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of In particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 15 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Sn particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 16 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Sb particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 17 A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Ag-plated Cu particles (Fukuda Metal Foil Co., Ltd.) was further added. The properties of this silver paste are shown in Table 3.
  • Example 18 A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC212D were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.
  • Example 19 A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC212D were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.
  • Example 20 A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC212D were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.
  • Example 21 A silver paste was prepared in the same procedure as in Example 1 except that LM1, AgC239, and AgS050 were mixed and used as silver particles in the proportions shown in Table 2. The properties of this silver paste are shown in Table 3.
  • Example 22 A silver paste was prepared in the same procedure as in Example 1 except that LM1, AgC239, and C-34 were mixed and used as silver particles in the proportions shown in Table 2. The properties of this silver paste are shown in Table 3.
  • Example 1 A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of AgC239 alone was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image
  • Example 2 A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of AgC212D (Fukuda Metal Foil Co., Ltd.) alone was used as the silver particles.
  • the properties of this silver paste are shown in Table 3.
  • photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .
  • Example 3 A silver paste was produced in the same procedure as in Example 1 except that only 100 parts by mass of TC-20E-L (Tokuriki Chemical Laboratory Co., Ltd.) was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image
  • Example 4 A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of LM1 alone was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image
  • SYMBOLS 1 Semiconductor element, 2a, 2b, 2c ... Lead frame, 3 ... Silver paste sintered body, 4 ... Wire, 5 ... Mold resin, 6 ... Substrate, 7 ... Lead frame, 8 ... LED chip, 9 ... Translucent Resin, 10, 20... Semiconductor device.

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Abstract

La présente invention se rapporte à une pâte d'argent qui contient : des particules d'argent tabulaires qui présentent une rugosité de surface moyenne (Ra) de ligne centrale inférieure ou égale à 1 nm ; des particules d'argent qui présentent une rugosité de surface moyenne (Ra) de ligne centrale comprise entre 2 et 20 nm et qui présentent un diamètre particulaire compris entre 1 et 20 μm ; et un solvant.
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JP2017002364A (ja) * 2015-06-11 2017-01-05 古河電気工業株式会社 表面被覆金属微粒子の分散溶液、ならびにこの分散溶液の塗布および焼結する工程を含む、焼結導電体および導電接続部材の製造方法
JP2017069189A (ja) * 2015-09-29 2017-04-06 三ツ星ベルト株式会社 導電性ペースト並びに電子基板及びその製造方法
US20170294396A1 (en) * 2014-12-26 2017-10-12 Henkel Ag & Co. Kgaa Sinterable bonding material and semiconductor device using the same
JP2018048286A (ja) * 2016-09-23 2018-03-29 日亜化学工業株式会社 導電性接着剤および導電性材料
WO2018088335A1 (fr) * 2016-11-10 2018-05-17 株式会社デンソー Dispositif à semi-conducteurs
JP2019137920A (ja) * 2013-10-22 2019-08-22 日立化成株式会社 銀ペースト及びそれを用いた半導体装置
US10575412B2 (en) 2016-12-27 2020-02-25 Mitsuboshi Belting Ltd. Electroconductive paste, electronic substrate, and method for manufacturing said substrate
CN111918736A (zh) * 2018-03-29 2020-11-10 特线工业株式会社 油墨用或涂料用的银粉
JP2022062181A (ja) * 2019-03-20 2022-04-19 尾池工業株式会社 薄片状銀粒子、銀分散液、及び導電性ペースト
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US20160001362A1 (en) * 2013-03-29 2016-01-07 Tokusen Kogyo Co., Ltd. Flake-like fine particles
EP2942128A4 (fr) * 2013-03-29 2016-08-24 Tokusen Kogyo Kk Microparticules en forme de flocons
US10688557B2 (en) 2013-03-29 2020-06-23 Tokusen Kogyo Co., Ltd. Flake-like fine particles
JP2019137920A (ja) * 2013-10-22 2019-08-22 日立化成株式会社 銀ペースト及びそれを用いた半導体装置
US10141283B2 (en) * 2014-12-26 2018-11-27 Henkel Ag & Co. Kgaa Sinterable bonding material and semiconductor device using the same
US20170294396A1 (en) * 2014-12-26 2017-10-12 Henkel Ag & Co. Kgaa Sinterable bonding material and semiconductor device using the same
JP2017002364A (ja) * 2015-06-11 2017-01-05 古河電気工業株式会社 表面被覆金属微粒子の分散溶液、ならびにこの分散溶液の塗布および焼結する工程を含む、焼結導電体および導電接続部材の製造方法
JP2017069189A (ja) * 2015-09-29 2017-04-06 三ツ星ベルト株式会社 導電性ペースト並びに電子基板及びその製造方法
JP2018048286A (ja) * 2016-09-23 2018-03-29 日亜化学工業株式会社 導電性接着剤および導電性材料
US11162004B2 (en) 2016-09-23 2021-11-02 Nichia Corporation Electrically conductive adhesive and electrically conductive material
US11739238B2 (en) 2016-09-23 2023-08-29 Nichia Corporation Electrically conductive adhesive and electrically conductive material
JP2018078213A (ja) * 2016-11-10 2018-05-17 株式会社デンソー 半導体装置
WO2018088335A1 (fr) * 2016-11-10 2018-05-17 株式会社デンソー Dispositif à semi-conducteurs
US10804237B2 (en) 2016-11-10 2020-10-13 Denso Corporation Semiconductor device
DE112017005657B4 (de) 2016-11-10 2023-04-20 Denso Corporation Halbleitervorrichtung und Verfahren zum Herstellen derselben
US10575412B2 (en) 2016-12-27 2020-02-25 Mitsuboshi Belting Ltd. Electroconductive paste, electronic substrate, and method for manufacturing said substrate
CN111918736A (zh) * 2018-03-29 2020-11-10 特线工业株式会社 油墨用或涂料用的银粉
US11515280B2 (en) * 2018-04-12 2022-11-29 Panasonic Intellectual Property Management Co., Ltd. Mounting structure and nanoparticle mounting material
JP2022062181A (ja) * 2019-03-20 2022-04-19 尾池工業株式会社 薄片状銀粒子、銀分散液、及び導電性ペースト

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