WO2014170994A1 - 鉛フリーはんだ合金 - Google Patents

鉛フリーはんだ合金 Download PDF

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Publication number
WO2014170994A1
WO2014170994A1 PCT/JP2013/061531 JP2013061531W WO2014170994A1 WO 2014170994 A1 WO2014170994 A1 WO 2014170994A1 JP 2013061531 W JP2013061531 W JP 2013061531W WO 2014170994 A1 WO2014170994 A1 WO 2014170994A1
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WO
WIPO (PCT)
Prior art keywords
solder alloy
electrode
solder
lead
electroless
Prior art date
Application number
PCT/JP2013/061531
Other languages
English (en)
French (fr)
Inventor
賢 立花
野村　光
Original Assignee
千住金属工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CN201380075708.7A priority Critical patent/CN105121677A/zh
Priority to PCT/JP2013/061531 priority patent/WO2014170994A1/ja
Priority to KR1020157029682A priority patent/KR20150120535A/ko
Priority to PT13882069T priority patent/PT2987876T/pt
Priority to CN201910435147.6A priority patent/CN110153588A/zh
Priority to ES13882069T priority patent/ES2702152T3/es
Priority to PL13882069T priority patent/PL2987876T3/pl
Application filed by 千住金属工業株式会社 filed Critical 千住金属工業株式会社
Priority to EP13882069.1A priority patent/EP2987876B1/en
Priority to US14/785,179 priority patent/US20160074971A1/en
Priority to SG11201508575XA priority patent/SG11201508575XA/en
Priority to KR1020187013242A priority patent/KR101941831B1/ko
Priority to JP2014520097A priority patent/JP5578301B1/ja
Priority to KR1020167016175A priority patent/KR20160075846A/ko
Priority to DK13882069.1T priority patent/DK2987876T3/en
Priority to MYPI2015002555A priority patent/MY160989A/en
Priority to TW103112960A priority patent/TWI618798B/zh
Publication of WO2014170994A1 publication Critical patent/WO2014170994A1/ja
Priority to PH12015502404A priority patent/PH12015502404B1/en
Priority to HRP20182112TT priority patent/HRP20182112T1/hr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01103—Transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01108—Noble metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01109—Metalloids or Semi-metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15701—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400 C

Definitions

  • the present invention relates to a lead-free solder alloy.
  • the present invention relates to a Sn—Bi—Cu—Ni lead-free solder alloy having excellent connection reliability.
  • Sn—Ag—Cu solder alloys have been widely used as lead-free solder.
  • Sn—Ag—Cu solder alloy has a relatively high melting point, and Sn-3Ag—0.5Cu solder alloy having a eutectic composition also shows about 220 ° C. For this reason, when the electrodes on the thin substrate as described above are soldered with the Sn—Ag—Cu solder alloy, the substrate may be distorted due to heat at the time of bonding, and bonding failure may occur.
  • soldering is performed at a low temperature to suppress distortion of the thin substrate and improve connection reliability.
  • An Sn—Bi solder alloy is known as a low melting point solder alloy that can cope with this.
  • Sn-58Bi solder alloy has a considerably low melting point of about 140 ° C., and can suppress distortion of the substrate.
  • Bi is originally a brittle element, and Sn—Bi solder alloy is also brittle. Even if the Bi content of the Sn—Bi solder alloy is reduced, Bi segregates in Sn and becomes brittle. When a large amount of stress is applied to a solder joint soldered using a Sn—Bi solder alloy, the brittleness may cause a crack, which may deteriorate the mechanical strength.
  • the area of the substrate used for it must be narrowed, and the miniaturization of electrodes and the reduction of the pitch between electrodes must be realized. Furthermore, since the amount of solder alloy used for soldering is reduced, the mechanical strength of the solder joint is reduced.
  • Patent Document 1 discloses a Sn—Bi—Cu—Ni lead-free solder alloy in which Cu and Ni are added to a Sn—Bi solder alloy in order to enable solder joining having high joint strength. According to this document, the joint using this solder alloy forms an intermetallic compound having a hexagonal close-packed structure in the solder joint and / or at the solder joint interface, so that the joint strength is improved. .
  • the electrode of the electronic component is usually Cu, and the Cu electrode is generally coated with electrodeless Ni plating, electroless Ni / Au plating, or electroless Ni / Pd / Au plating. .
  • the Cu electrode is subjected to electroless plating with a noble metal such as Au or a combination of Au and Pd.
  • Au plating suppresses oxidation of the underlying Ni plating and improves wettability with molten solder.
  • Electroless Ni plating forms a Ni plating containing a significant amount of P derived from a reducing agent (eg, sodium hypophosphite) used in electroless plating. Such Ni plating contains at least several weight percent P, for example 2-15% by weight.
  • Patent Document 1 Cu or Ni is added to the Sn—Bi solder alloy in order to form an intermetallic compound having a hexagonal close-packed structure at the joint interface between the solder alloy and the Cu wiring portion drawn from the electrode.
  • the specific alloy composition is not disclosed, and the results for demonstrating the effect of high bonding strength are not described.
  • This document describes the range of the content of Cu and Ni added to a composition having Sn of 57 atm and Bi of 43 atm%, but it is unclear whether or not the bonding strength is improved in all of these ranges. .
  • the Ni diffusion coefficient in the solder alloy is greater than the P diffusion coefficient, so that Ni preferentially diffuses into the solder alloy, A portion having a relatively high concentration of P is generated at the bonding interface with the electrode, and a so-called P-rich layer is formed. Since this P-rich layer is hard and brittle, it deteriorates the shear strength of the solder joint. When a solder joint having such a P-rich layer is broken by shear, a phenomenon in which the Ni plating layer is exposed occurs. This breakage is not caused by breakage of the solder joint itself, but rather by peeling of the P-rich layer formed on the electrode. Therefore, the formation of the P-rich layer adversely affects the connection reliability of the solder joint.
  • the object of the present invention is to provide a solder joint formed by this soldering when soldering is performed on a Cu electrode that has a low melting point, excellent ductility, and high tensile strength.
  • An object of the present invention is to provide a Sn—Bi—Cu—Ni lead-free solder alloy that exhibits high shear strength, suppresses thermal distortion of the substrate during solder bonding, and has excellent connection reliability.
  • Another object of the present invention is to provide Sn-Bi- having excellent connection reliability because a solder joint formed by soldering exhibits high shear strength even for a Cu electrode that has not been plated. To provide a Cu—Ni-based lead-free solder alloy.
  • the inventors In order to increase the shear strength when soldering an electrode having a P-containing Ni plating layer formed by electroless Ni plating, the inventors have determined that the diffusion coefficient of Ni in the solder alloy is the diffusion coefficient of P. Focused on the fact that it is larger than Then, the present inventors have come up with the idea that it is possible to suppress the growth of the P-rich layer by suppressing the diffusion of Ni into the solder alloy during soldering, in order to increase the shear strength. We conducted an intensive study.
  • the present inventors performed soldering on a Cu electrode having an electroless Ni plating layer by adding only about 0.5% by mass of Cu to a Sn—Bi solder alloy. As a result, solder formed by soldering was used. It was found that the joint had poor shear strength. Therefore, in this Sn—Bi—Cu solder alloy, even if the Cu content is increased to 1.1% by mass, the shear strength is not improved, and furthermore, the melting point is high and the ductility is greatly deteriorated. Obtained. That is, the present inventors cannot increase the shear strength of the formed solder joint even if only Cu is added to the Sn—Bi solder alloy, and depending on the Cu content, the high melting point, low ductility, etc. The knowledge that a problem occurred was obtained.
  • the present inventors pay attention to the content of Cu to be added to the Sn—Bi solder alloy and Ni that is a solid solution with Cu, based on the above-described knowledge obtained by adding only Cu.
  • the content of was precisely investigated.
  • the present inventors have a low melting point, excellent ductility, tensile strength when Cu is 0.3 to 1.0 mass% and Ni is 0.01 to 0.06 mass%. It has been found that the shear strength of the solder joint formed on the Cu electrode having the electroless Ni plating layer is remarkably improved by suppressing the growth of the P-rich layer.
  • the present inventors have obtained the knowledge that the distortion of the substrate at the time of soldering caused by the thinning of the substrate is reduced and excellent connection reliability is exhibited. Furthermore, in order to confirm versatility, the present inventors performed soldering on a Cu electrode that does not have an electroless Ni plating layer, and the solder joint formed on this Cu electrode also has an electroless Ni plating layer. As in the case of the solder joint formed on the Cu electrode, the present inventors have obtained knowledge that high shear strength is exhibited, and have completed the present invention.
  • a lead-free solder alloy having an alloy composition consisting of Bi: 31 to 59%, Cu: 0.3 to 1.0%, Ni: 0.01 to 0.06%, and the balance Sn in mass%.
  • the plate thickness is 5 mm or less, and there are a plurality of Cu electrodes having a Ni plating layer.
  • Each of the Cu electrodes is formed using the lead-free solder alloy described in (1) or (2). Having a solder joint.
  • the lead-free solder alloy according to the present invention is suitable for use in soldering a Cu electrode formed on a thin substrate having an electroless Ni plating treatment and a plate thickness of 5 mm or less.
  • the effect of the present invention is most exhibited when used for soldering an electrode having the same. Therefore, warping of the thin substrate during soldering is minimized due to the low melting point of the solder alloy according to the present invention.
  • connection reliability of the solder joint is due to the suppression of the growth of the P-rich layer at the joint interface, which causes the shear strength of the solder joint to deteriorate, and the good ductility (elongation) and high tensile strength of the solder alloy. To be improved.
  • the solder alloy according to the present invention is also suitable for use in soldering Cu electrodes that are not subjected to electroless Ni plating.
  • FIGS. 2 (c) and 2 (d) are cross-sectional photographs of 800 times, and FIG. 2 (d) shows a case where a solder joint is formed by soldering of a Cu electrode subjected to electroless Ni / Pd / Au plating.
  • FIG. 3 is a graph showing the relationship between the Cu content and the shear strength (Cu electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 4 is a graph showing the relationship between the Cu content and the shear strength (electroless Ni / Au electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 5 is a diagram showing the relationship between the Cu content and the elongation of the alloy of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 3 is a graph showing the relationship between the Cu content and the shear strength (Cu electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 4 is a graph showing the relationship between the Cu content and the shear strength (electroless Ni / Au electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 5
  • FIG. 6 is a graph showing the relationship between the Cu content and the shear strength (Cu electrode) of the Sn-40Bi-0.5Cu- (0 to 0.07) Ni solder alloy.
  • FIG. 7 is a graph showing the relationship between the Cu content and the shear strength (electroless Ni / Au electrode) of the Sn-40Bi-0.5Cu- (0 to 0.07) Ni solder alloy.
  • FIG. 8 is a view showing the relationship between the Cu content and the elongation of the alloy of Sn-40Bi-0.5Cu- (0 to 0.07) Ni solder alloy.
  • the lead-free solder alloy according to the present invention is a Sn—Bi—Cu—Ni solder alloy containing Cu and Ni. Since Cu and Ni are all solid solutions, the lead-free solder alloy according to the present invention containing Cu and Ni in advance has low Cu and Ni solubility, and diffusion of Cu and Ni from the electrode to the solder alloy Can be suppressed. By suppressing the diffusion of Ni, the growth of the P-rich layer formed on the electroless Ni plating layer can be suppressed. Here, it seems that it is possible to suppress the diffusion of Cu and Ni by adding only Cu to the Sn—Bi solder alloy and increasing the Cu content.
  • the Sn—Bi—Cu solder alloy cannot be used for soldering a Cu electrode having an electroless Ni plating layer.
  • Ni is mentioned as an element that reduces the solubility of Ni without increasing the Cu content.
  • a solder alloy contains trace amount Ni, a solder alloy shows a low melting point and high ductility, and electroless Ni plating processing like electroless Ni / Au plating or electroless Ni / Pd / Au plating is applied to an electrode In this case, by suppressing the diffusion of Ni into the solder alloy, the growth of the brittle P-rich layer is suppressed and the shear strength of the solder joint is greatly improved.
  • the lead-free solder alloy according to the present invention contains a predetermined amount of Cu and Ni, the solubility of Cu is low. Even for Cu electrodes that do not have an electroless Ni plating layer, by suppressing the diffusion of Cu into the solder alloy, the excessive formation of brittle SnCu compounds generated in the bonding interface and the solder alloy is suppressed, The shear strength of the solder joint is increased. As a result, in the present invention, excellent connection reliability can be ensured by suppressing distortion of the thin substrate during soldering regardless of whether or not the Cu electrode is plated.
  • the electroless Ni plating layer is formed with Au plating, or a plating layer of a noble metal such as Pd / Au or an alloy thereof.
  • the Au plating layer is formed on the Ni plating layer.
  • the Au plating layer has a very thin film thickness of about 0.05 ⁇ m, and disappears during soldering due to diffusion into the solder alloy. Therefore, when various characteristics are evaluated in the present invention, it is not necessary to consider the Au plating layer and other noble metal plating layers.
  • the reason for limiting the alloy composition of the solder alloy is as follows.
  • the Bi content is 31-59%. Bi lowers the melting point of the solder alloy. If the Bi content is less than 31%, the melting point is high and the substrate is distorted during soldering. If the Bi content is more than 59%, the tensile strength and ductility deteriorate due to the precipitation of Bi.
  • the Bi content is preferably 32 to 58%, more preferably 35 to 58%.
  • Cu content is 0.3-1.0%.
  • Cu suppresses diffusion of Ni in the electroless Ni plating layer into the solder alloy, and suppresses growth of a P-rich layer generated at the interface between the Ni plating layer and the solder joint.
  • excessive formation of brittle SnCu compounds generated in the solder interface and the bonding interface between the Cu electrode and the solder joint not subjected to the electroless Ni plating treatment is suppressed, and the solder Increases the shear strength of the joint. If the Cu content is less than 0.3%, excessive formation of the P-rich layer and the SnCu compound cannot be suppressed, and the shear strength decreases.
  • the Cu content is more than 1.0%, an intermetallic compound with Sn is excessively formed in the solder alloy, and the ductility of the solder alloy is lowered. Further, the melting point of the solder alloy is remarkably increased, and the wettability of the solder alloy is lowered. Furthermore, workability deteriorates due to substrate distortion.
  • the Cu content is preferably 0.3 to 0.8%, more preferably 0.3 to 0.7%.
  • Ni content is 0.01-0.06%. By adding Ni, the effect of suppressing the diffusion of Ni of Cu is promoted, and the effect of suppressing the growth of the P-rich layer and further improving the shear strength is exhibited. If the Ni content is less than 0.01%, the effect of improving the shear strength cannot be exhibited. When the Ni content is more than 0.06%, the compound of Sn and Ni is excessively formed in the solder alloy, so that the ductility is lowered.
  • the Ni content is preferably 0.02 to 0.05.
  • the lead-free solder alloy according to the present invention may contain 0.003 to 0.05% in total of one or more selected from the group consisting of P and Ge as optional elements. By adding these elements, the growth of the P-rich layer is suppressed to increase the shear strength of the solder joint as in the case where the element is not added, and the solder alloy is changed to yellow or the like by oxidation (hereinafter, appropriately above, (Referred to as “yellowing”).
  • the lead-free solder alloy according to the present invention can also be used in the form of solder balls. The solder balls are placed on the module substrate and mounted on the electrodes by reflow. Thereafter, it is determined whether or not soldering is performed by image recognition.
  • the lead-free solder alloy according to the present invention contains at least one selected from the group consisting of P and Ge, thereby preventing discoloration due to oxygen or the like, thereby avoiding errors in bump quality inspection. .
  • the P content is preferably 0.001 to 0.03%, more preferably 0.01 to 0.07%.
  • the Ge content is preferably 0.001 to 0.03%, more preferably 0.01 to 0.03%.
  • the lead-free solder alloy according to the present invention having such an alloy composition does not expose the electroless Ni plating layer of the electrode when the solder joint portion of the solder joint is removed by shearing.
  • the lead-free solder according to the present invention can suppress the diffusion of Ni in the electroless Ni plating layer and suppress the growth of the P-rich layer formed on the surface of the plating layer. .
  • the mechanical properties of the joint interface, particularly the shear strength are remarkably improved.
  • the lead-free solder alloy according to the present invention can be used in the form of a preform, a wire, a solder paste, a solder ball and the like.
  • the lead-free solder alloy according to the present invention has high tensile strength and ductility, and high shear strength. For this reason, when used in the form of a solder ball, it can be made smaller than a conventional solder ball, and can sufficiently cope with the thinning of the substrate used for electronic parts and the like and the miniaturization of the electrode.
  • the lead-free solder alloy according to the present invention can form a solder joint by joining an electrode of a PKG (Package) such as an IC chip and an electrode of a substrate such as a PCB (Printed Circuit Board).
  • a PKG Package
  • PCB Print Circuit Board
  • the lead-free solder alloy according to the present invention has excellent shear strength when applied to a solder joint while maintaining high ductility and tensile strength. For this reason, even if slight distortion occurs in the substrate during reflow, the electrode and the solder joint portion are not broken, and excellent connection reliability can be ensured even if a thinner substrate is used.
  • the solder joint according to the present invention includes an electrode and a solder joint.
  • a solder joint part shows the part mainly formed with the solder alloy.
  • the substrate according to the present invention has a thickness of 5 mm or less and has a plurality of Cu electrodes having a Ni plating layer, and each of the Cu electrodes is a solder joint formed using the lead-free solder alloy according to the present invention.
  • the board thickness of the substrate is preferably 3 mm or less, more preferably 2 mm or less.
  • the material for the substrate include Si, glass epoxy, paper phenol, and bakelite.
  • the electrode that the substrate has include a Cu electrode that has not been plated, a Cu electrode that has been plated with Ni, a Ni electrode, and the like.
  • the lead-free solder alloy according to the present invention can produce a low-alpha lead-free solder alloy by using a high-purity material or a low-alpha wire. Soft errors can be prevented by using this solder alloy around the memory.
  • solder alloys shown in Table 1 were produced. Using this solder alloy, the melting point, tensile strength, and elongation (ductility) of the solder alloy are obtained, and using the solder joint formed using this solder alloy, the film thickness measurement of the P-rich layer, shear strength, and plate The exposure rate was determined as shown below. The results are shown in Table 1.
  • the melting point was measured using a DSC (Differential scanning calorimetry) (manufactured by Seiko Instruments Inc .: DSC6200) at a temperature rising rate of 5 ° C./min. The melting point (° C.) was measured.
  • DSC Different scanning calorimetry
  • the solder alloy shown in Table 1 is a Cu electrode (hereinafter simply referred to as “nothing”) on which a PCB having a substrate thickness of 1.2 mm and an electrode size of 0.24 mm in diameter is applied to a PCB subjected to electroless Ni / Au plating. Soldering was performed by joining to an “electrolytic Ni / Au electrode”. For soldering, solder balls with a diameter of 0.3 mm made from each solder alloy are applied to the substrate using a water-soluble flux (Senju Metal Co., Ltd .: WF-6400), and then the balls are mounted. Then, soldering was performed by a reflow method with a reflow profile at a peak temperature of 210 ° C. to obtain a sample on which a solder joint was formed.
  • the film thickness of the P-rich layer of each sample was determined by observing a cross section near the joint interface between the solder joint and the Ni plating layer based on the SEM photograph. Specifically, it is analyzed from a photograph using an electron microscope (manufactured by JEOL Ltd .: JSM-7000F), and the P-rich layer is distinguished from a layer that is not a P-rich layer by color-coding, so ( ⁇ m) was measured. About five samples produced on the same conditions, the film thickness of the P rich layer was measured similarly, and the average value was made into the film thickness of the P rich layer.
  • each of the solder alloys shown in Table 1 was used using two types of Cu electrodes (hereinafter simply referred to as “Cu electrodes”) and electroless Ni / Au electrodes that have not been plated. And soldering.
  • the shear strength (N) of this sample was measured with a shear strength measuring apparatus (Dage: SERIES 4000HS) under the condition of 1000 mm / sec. If the shear strength is 3.00 N or more for the Cu electrode and 2.60 N or more for the electroless Ni / Au electrode, it can be used practically without any problem.
  • the melting point was 185 degrees or less
  • the tensile strength was 70 MPa or more
  • the elongation was 65% or more
  • the P-rich layer thickness was 0.014 ⁇ m or less
  • the Cu electrode was used.
  • the solder joint formed using the shear strength was 3.00 N or more
  • the solder joint formed using the electroless Ni / Au electrode was 2.60 N or more
  • the plate exposure rate was 0% in all cases. .
  • Comparative Example 1 which is a Sn-58Bi solder alloy containing no Cu and Ni, has a thick P-rich layer, a remarkably inferior shear strength at a Cu electrode and an electroless Ni / Au electrode, and a plate exposure rate. High value was shown.
  • Comparative Example 2 containing no Ni and Comparative Example 3 containing no Cu, the P-rich layer was thick, and the shear strength at the Cu electrode and the electroless Ni / Au electrode was remarkably inferior. In particular, Comparative Example 3 containing no Cu showed a high plate exposure rate.
  • Comparative Example 4 In Comparative Example 4 with a small amount of Bi, the melting point of the alloy was high and the elongation was inferior. In Comparative Example 5 with a large amount of Bi, the tensile strength and elongation of the alloy were inferior. Further, the shear strength at the electroless Ni / Au electrode was inferior, and the elongation of the solder alloy was also inferior.
  • Comparative Example 6 In Comparative Example 6 with less Cu, the shear strength at the electroless Ni / Au electrode was inferior, the P-rich layer was thick, and the plate exposure rate was high. Comparative Example 7 containing no Ni and containing a large amount of Cu and Comparative Example 8 containing a large amount of Cu had a high melting point, poor elongation, and poor shear strength at the electroless Ni / Au electrode.
  • Comparative Example 9 In Comparative Example 9 with a low Ni content, the shear strength at the Cu electrode was inferior. In Comparative Example 10 having a large Ni content, the elongation of the alloy was remarkably inferior.
  • FIG. 1 is an SEM photograph of the electrode shear surface after soldering an electroless Ni / Au electrode using Sn-58Bi solder alloy and shearing away the solder joint.
  • the Ni plating layer was exposed as shown in FIG. This is considered to be because the P-rich layer grew and peeling occurred at the interface between the P-rich layer and the electroless Ni / Au plating layer.
  • FIG. 2 (a) and 2 (b) are cross-sectional SEM photographs in the vicinity of the interface between the solder connection portion and the electrode in the solder joint in which the electroless Ni / Au electrode is soldered.
  • FIG. FIG. 2D is a cross-sectional SEM photograph of the vicinity of the interface between the solder connection portion and the electrode in the solder joint in which the Cu electrode subjected to the electroless Ni / Pd / Au plating process is soldered.
  • Sn-58Bi Comparative Example 1: Shear strength at an electroless Ni / Au electrode is 2.01N
  • Example 7 the shear strength at the electroless Ni / Au electrode was 2.85N.
  • the growth of the P-rich layer was suppressed by containing a predetermined amount of Cu and Ni, and the P-rich layer could not be confirmed from these photographs.
  • the shear strength is remarkably improved by suppressing the growth of the P-rich layer.
  • FIGS. 3 to 8 show the relationship between the Cu and Ni contents of the solder alloy, the Cu electrode, the electroless Ni / Au electrode, and the elongation.
  • FIGS. 3 to 5 the results of Examples 6 to 9 and Comparative Examples 3, 6 and 7, in which the Bi content is 40% and the Ni content is 0.03%, were used.
  • 6 to 8 the results of Examples 7, 10 and 11 and Comparative Examples 2, 8 and 9 in which the Bi content was 40% and the Cu content was 0.5% were used.
  • FIG. 3 is a graph showing the relationship between the Cu content and the shear strength (Cu electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 3 is a graph showing the relationship between the Cu content and the shear strength (Cu electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 4 is a graph showing the relationship between the Cu content and the shear strength (electroless Ni / Au electrode) of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy.
  • FIG. 5 is a diagram showing the relationship between the Cu content and the elongation of the alloy of Sn-40Bi- (0 to 1.1) Cu-0.03Ni solder alloy. According to FIGS. 3 to 5, the range of Cu in which the shear strength of the Cu electrode is 3.0 N or more, the shear strength of the Ni electrode is 2.6 N or more, and the elongation is 65% or more is 0.3%. It was found to be ⁇ 1.0%.
  • FIG. 6 is a graph showing the relationship between the Cu content and the shear strength (Cu electrode) of the Sn-40Bi-0.5Cu- (0 to 0.07) Ni solder alloy.
  • FIG. 7 is a graph showing the relationship between the Cu content and the shear strength (electroless Ni / Au electrode) of the Sn-40Bi-0.5Cu- (0 to 0.07) Ni solder alloy.
  • FIG. 8 is a view showing the relationship between the Cu content and the elongation of the alloy of Sn-40Bi-0.5Cu- (0 to 0.07) Ni solder alloy. According to FIGS. 6 to 8, the range of Ni in which the shear strength of the Cu electrode is 3.0 N or more, the shear strength of the Ni electrode is 2.6 N or more, and the elongation is 65% or more is 0.01 to It was found to be 0.06%.

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Abstract

　低融点で延性に優れ引張強度が高く、接合界面のＰリッチ層の生成を抑制して高いせん断強度を有することにより、基板の歪みを抑制して優れた接続信頼性を有するＳｎ－Ｂｉ－Ｃｕ－Ｎｉ系鉛フリーはんだ合金を提供する。　電極のＣｕやＮｉの拡散を抑制するとともにはんだ合金の伸びや濡れ性を確保するため、質量％で、Ｂｉ：３１～５９％、Ｃｕ：０．３～１．０％、Ｎｉ：０．０１～０．０６％、残部Ｓｎからなる合金組成を有する。

Description

鉛フリーはんだ合金
　本発明は、鉛フリーはんだ合金に関する。特に、接続信頼性に優れるＳｎ－Ｂｉ－Ｃｕ－Ｎｉ系鉛フリーはんだ合金に関する。
　近年、携帯電話などの電子機器は小型化、薄型化する傾向にある。そのような電子機器に用いられている半導体装置等の電子部品では、厚さを数ｍｍ程度から１ｍｍ以下に薄くした基板が用いられるようになってきている。
　一方、従来、鉛フリーはんだとしてＳｎ－Ａｇ－Ｃｕはんだ合金が広く使用されている。Ｓｎ－Ａｇ－Ｃｕはんだ合金は比較的融点が高く、共晶組成であるＳｎ－３Ａｇ－０．５Ｃｕはんだ合金でも２２０℃程度を示す。このため、前述のような薄い基板の電極をＳｎ－Ａｇ－Ｃｕはんだ合金ではんだ付けを行うと、接合時の熱で基板が歪み、接合不良が発生する場合がある。
　このような接続不良に対して、はんだ付けを低温で行うことにより薄い基板の歪みを抑制して接続信頼性を高めることが行われている。これに対応可能な低融点はんだ合金として、Ｓｎ－Ｂｉはんだ合金が知られている。このはんだ合金の中でも、Ｓｎ－５８Ｂｉはんだ合金は、融点が１４０℃程度とかなり低く、基板の歪みを抑制することができる。
　しかし、Ｂｉは元来脆い元素であり、Ｓｎ－Ｂｉはんだ合金も脆い。Ｓｎ－Ｂｉはんだ合金のＢｉの含有量を低減しても、ＢｉがＳｎ中に偏析することにより脆化する。Ｓｎ－Ｂｉはんだ合金を用いてはんだ付けを行ったはんだ継手は、多大な応力が加わるとその脆性により亀裂が発生して機械的強度が劣化するおそれがある。
　また、電子部品の小型化に対応するため、それに用いる基板の面積を狭くしなければならず、電極の小型化や電極間の低ピッチ化を実現しなければならない。さらには、はんだ付けを行うためのはんだ合金の使用量が低減するため、はんだ継手の機械的強度が低下する。
　そこで、特許文献１には、高い接合強度を有するはんだ接合を可能とするため、Ｓｎ－Ｂｉはんだ合金にＣｕおよびＮｉを添加したＳｎ－Ｂｉ－Ｃｕ－Ｎｉ鉛フリーはんだ合金が開示されている。同文献によれば、このはんだ合金を用いた接合部は、はんだ接合部中及び／又ははんだ接合界面に六方細密充填構造を有する金属間化合物を形成するため、接合強度が向上するというものである。
特開２０１３―００７４４号公報
　電子部品の電極は、通常、Ｃｕであり、このＣｕ電極に対して、無電極Ｎｉめっき、無電解Ｎｉ／Ａｕめっきや無電解Ｎｉ／Ｐｄ／Ａｕめっきが被覆されているのが一般的である。このように、Ｃｕ電極は、ＡｕやＡｕとＰｄとの組み合わせのような貴金属で無電解めっき処理が行われている。Ａｕめっきは下地のＮｉめっきの酸化を抑制し、溶融はんだとの濡れ性を改善する。無電解Ｎｉめっきは、無電解めっきに使用される還元剤（例えば、次亜リン酸ナトリウム）由来のかなりの量のＰを含有するＮｉめっきを形成する。このようなＮｉめっきは少なくとも数質量パーセントのＰ、例えば２～１５質量％を含有する。
　しかし、特許文献１には、はんだ合金と電極から引き出されたＣｕ配線部との接合界面に六方細密充填構造の金属間化合物を形成するため、Ｓｎ－Ｂｉはんだ合金にＣｕやＮｉを添加することが記載されているが、具体的な合金組成は開示されてなく、接合強度が高いとする効果を立証するための結果も記載されていない。同文献は、Ｓｎが５７ａｔｍ、Ｂｉが４３ａｔｍ％である組成に添加するＣｕやＮｉの含有量の範囲が記載されているが、この範囲のすべてにおいて接合強度が向上するか否かは不明である。
　また、同文献には、はんだ合金の接合対象としてプリント基板のＣｕ配線部やＣｕを含有しない配線部であることが記載されているが、配線部がＣｕであることの他、接合対象がどのような構成であるのか不明である。前述のように、同文献にははんだ合金の具体的な合金組成が開示されていないため、電極とはんだ合金との接合界面に金属化合物が形成されることを除いて接合界面の状態に関して一切開示も示唆もされていない。したがって、同文献に開示されたＢｉ、ＣｕおよびＮｉの含有量を満たすすべてのはんだ合金が、例えば無電解Ｎｉめっき処理が行われたＣｕ電極のはんだ付けに使用された場合に、以下のような問題点を解決することができるとは到底考え難い。
　無電界Ｎｉめっき処理が行われた電極にはんだ付けが行われると、はんだ合金中のＮｉの拡散係数がＰの拡散係数より大きいため、Ｎｉが優先的にはんだ合金中に拡散し、はんだ合金と電極との接合界面にＰの濃度が相対的に高い部分が生じ、いわゆるＰリッチ層が形成される。このＰリッチ層は固くて脆いためにはんだ継手のせん断強度を劣化させる。そのようなＰリッチ層を有するはんだ継手がせん断により破断した際には、Ｎｉめっき層が露出する現象が発生する。この破断は、はんだ継手自体の破断ではなく、むしろ電極に形成されたＰリッチ層の剥離により引き起こされる。したがって、Ｐリッチ層の形成ははんだ継手の接続信頼性に影響を不利に与えることになる。
　同様に、めっき処理が行われていないＣｕ電極にはんだ付けが行われた場合にも、同文献で開示されている各元素の含有量の範囲を満たすすべてのはんだ合金が高い接合強度を示すか否かは定かではない。
　ここに、本発明の課題は、低融点で延性に優れ引張強度が高く、また、無電解Ｎｉめっき処理が行われたＣｕ電極にはんだ付けを行うと、このはんだ付けにより形成されたはんだ継手が高いせん断強度を示すことにより、はんだ接合時の基板の熱歪みを抑制し、優れた接続信頼性を有するＳｎ－Ｂｉ－Ｃｕ－Ｎｉ系鉛フリーはんだ合金を提供することである。また、本発明の課題は、めっき処理が行われていないＣｕ電極に対しても、はんだ付けにより形成されたはんだ継手が高いせん断強度を示すことにより、優れた接続信頼性を有するＳｎ－Ｂｉ－Ｃｕ－Ｎｉ系鉛フリーはんだ合金を提供することである。
　本発明者らは、無電解Ｎｉめっき処理により形成されるＰ含有Ｎｉめっき層を有する電極にはんだ付けを行う場合、せん断強度を高めるために、はんだ合金中のＮｉの拡散係数がＰの拡散係数と比較して大きいことに着目した。そして、本発明者らは、はんだ付けの際にＮｉのはんだ合金中への拡散を抑制することにより、Ｐリッチ層の成長を抑制することが可能であることに思い至り、せん断強度を高めるために鋭意検討を行った。
　まず、本発明者らは、Ｓｎ－Ｂｉはんだ合金にＣｕのみを０．５質量％程度添加して無電解Ｎｉめっき層を有するＣｕ電極にはんだ付けを行ったところ、はんだ付けにより形成されたはんだ継手はせん断強度が劣るとの知見を得た。そこで、このＳｎ－Ｂｉ－Ｃｕはんだ合金において、Ｃｕの含有量を１．１質量％にまで増加しても、せん断強度が改善されず、さらには融点が高く延性が大幅に劣化するとの知見を得た。つまり、本発明者らは、Ｓｎ－Ｂｉはんだ合金にＣｕのみを添加しても、形成されたはんだ継手のせん断強度を高めることができず、Ｃｕの含有量によっては高融点や低延性などの問題が発生するとの知見を得た。
　そこで、本発明者らは、Ｃｕのみを添加したことによる前述の知見に基づいて、Ｓｎ－Ｂｉはんだ合金に添加するＣｕの含有量と、Ｃｕと全率固溶であるＮｉに着目し、Ｎｉの含有量を精密に調査した。この結果、本発明者らは、Ｃｕが０．３～１．０質量％であり、Ｎｉが０．０１～０．０６質量％である場合に、低融点であり、延性に優れ引張強度が高く、Ｐリッチ層の成長を抑制し、無電解Ｎｉめっき層を有するＣｕ電極に形成したはんだ継手のせん断強度が著しく改善するとの知見を得た。これにより、本発明者らは、基板の薄型化によって生じるはんだ付け時の基板の歪みを低減し、優れた接続信頼性を示すとの知見を得た。さらに、本発明者らは、汎用性を確認するため、無電解Ｎｉめっき層を有さないＣｕ電極にはんだ付けを行ったところ、このＣｕ電極に形成したはんだ継手も、無電解Ｎｉめっき層を有するＣｕ電極に形成したはんだ継手と同様に、高いせん断強度を示すとの知見を得て、本発明を完成するに至った。
　ここに、本発明は次の通りである。
　（１）質量％で、Ｂｉ：３１～５９％、Ｃｕ：０．３～１．０％、Ｎｉ：０．０１～０．０６％、残部Ｓｎからなる合金組成を有する鉛フリーはんだ合金。
　（２）さらに、質量％で、ＰおよびＧｅからなる群から選択される１種以上を合計で０．００３～０．０５％を含有する、請求項１に記載の鉛フリーはんだ合金。
　（３）Ｎｉめっき層を有するＣｕ電極上に上記（１）または上記（２）に記載の鉛フリーはんだ合金を用いて形成されたはんだ継手。
　（４）前記Ｎｉめっき層はＰを含有する無電解めっき層である、上記（３）に記載のはんだ継手。
　（５）板厚が５ｍｍ以下であり、Ｎｉめっき層を有する複数のＣｕ電極を有し、前記Ｃｕ電極の各々は上記（１）または上記（２）に記載の鉛フリーはんだ合金を用いて形成されたはんだ継手を有する基板。
　（６）前記Ｎｉめっき層はＰを含有する、上記（５）に記載の基板。
　本発明に係る鉛フリーはんだ合金は、無電解Ｎｉめっき処理が行われ、板厚が５ｍｍ以下である薄い基板に形成されたＣｕ電極のはんだ付けの使用に適しており、無電解Ｎｉめっき層を有する電極のはんだ付けに使用することによって本発明の効果が最も発揮される。したがって、はんだ付けの際の薄い基板の反りは、本発明に係るはんだ合金の低融点のために最小限に抑えられる。このように、はんだ継手の接続信頼性は、はんだ継手のせん断強度が劣化する原因となる接合界面のＰリッチ層の成長の抑制と、はんだ合金の良好な延性（伸び）と高い引張強度のために改善される。さらに、本発明に係るはんだ合金は、無電解Ｎｉめっき処理が行われていないＣｕ電極のはんだ付けに使用することにも適している。
無電解Ｎｉ／Ａｕめっき処理されたＣｕ電極にＳｎ－５８Ｂｉはんだ合金を用いてはんだ付けを行い、はんだ接合部をせん断除去した後における、倍率３００倍の電極の表面写真である。 図２（ａ）および図２（ｂ）は、無電解Ｎｉ／Ａｕめっき処理が行われたＣｕ電極のはんだ付けによってはんだ継手が形成された場合における、はんだ接合部と電極との界面近傍の倍率８００倍の断面写真であり、図２（ｃ）および図２（ｄ）は、無電解Ｎｉ／Ｐｄ／Ａｕめっき処理が行われたＣｕ電極のはんだ付けによってはんだ継手が形成された場合における、はんだ接合部と電極との界面近傍の倍率８００倍の断面写真である。 図３は、Ｓｎ－４０Ｂｉ－（０～１．１）Ｃｕ－０．０３Ｎｉはんだ合金の、Ｃｕ含有量とせん断強度（Ｃｕ電極）との関係を示す図である。 図４は、Ｓｎ－４０Ｂｉ－（０～１．１）Ｃｕ－０．０３Ｎｉはんだ合金の、Ｃｕの含有量とせん断強度（無電解Ｎｉ／Ａｕ電極）との関係を示す図である。 図５は、Ｓｎ－４０Ｂｉ－（０～１．１）Ｃｕ－０．０３Ｎｉはんだ合金の、Ｃｕの含有量と合金の伸びとの関係を示す図である。 図６は、Ｓｎ－４０Ｂｉ－０．５Ｃｕ－（０～０．０７）Ｎｉはんだ合金の、Ｃｕの含有量とせん断強度（Ｃｕ電極）との関係を示す図である。 図７は、Ｓｎ－４０Ｂｉ－０．５Ｃｕ－（０～０．０７）Ｎｉはんだ合金の、Ｃｕの含有量とせん断強度（無電解Ｎｉ／Ａｕ電極）との関係を示す図である。 図８は、Ｓｎ－４０Ｂｉ－０．５Ｃｕ－（０～０．０７）Ｎｉはんだ合金の、Ｃｕの含有量と合金の伸びとの関係を示す図である。
　本発明を以下により詳しく説明する。以下の説明において、はんだ合金組成に関する「％」は、特に指定しない限り「質量％」である。
　本発明に係る鉛フリーはんだ合金は、ＣｕおよびＮｉを含有するＳｎ－Ｂｉ－Ｃｕ－Ｎｉはんだ合金である。ＣｕとＮｉとは全率固溶であるため、予めＣｕおよびＮｉを含有する本発明に係る鉛フリーはんだ合金は、ＣｕおよびＮｉの溶解度が低くなり、電極からはんだ合金へのＣｕやＮｉの拡散を抑制することができる。Ｎｉの拡散を抑制することによって、無電解Ｎｉめっき層上に形成されるＰリッチ層の成長を抑制することができる。ここで、Ｓｎ－Ｂｉはんだ合金にＣｕのみを添加し、Ｃｕの含有量を増加させることによってＣｕおよびＮｉの拡散を抑制することが可能であるとも思われる。
　しかし、単にＳｎ－Ｂｉ－Ｃｕはんだ合金で、Ｃｕの含有量を増加しても、電極との接合界面およびはんだ合金内でＣｕＳｎ化合物が増加するため、せん断強度が劣化し、はんだ合金自体の融点も高まり、延性も劣化する。したがって、Ｓｎ－Ｂｉ－Ｃｕはんだ合金では、無電解Ｎｉめっき層を有するＣｕ電極のはんだ付けに使用することができない。
　ここで、Ｃｕの含有量を増加させずにＮｉの溶解度を低減する元素としてＮｉが挙げられる。そして、はんだ合金が微量のＮｉを含有することによって、はんだ合金が低融点および高延性を示し、電極に無電界Ｎｉ／Ａｕめっきもしくは無電解Ｎｉ／Ｐｄ／Ａｕめっきのような無電解Ｎｉめっき処理が行われている場合には、Ｎｉのはんだ合金への拡散を抑制することにより脆いＰリッチ層の成長を抑制してはんだ継手のせん断強度を大幅に改善する。
　さらに、本発明に係る鉛フリーはんだ合金は、ＣｕおよびＮｉを所定量含有するため、Ｃｕの溶解度が低い。無電解Ｎｉめっき層を有さないＣｕ電極に対しても、Ｃｕのはんだ合金への拡散を抑制することにより、接合界面及びはんだ合金中に生成される脆いＳｎＣｕ化合物の過剰な形成を抑制し、はんだ継手のせん断強度が高まる。その結果、本発明では、Ｃｕ電極にめっき処理が行われているか否かにかかわらず、はんだ付け時の薄い基板の歪みを抑制して優れた接続信頼性を確保することができる。
　前述のように、一般に無電界Ｎｉめっき層にはＡｕめっき、もしくはＰｄ／Ａｕのような貴金属やこれらの合金のめっき層が形成されている。Ａｕめっき層はＮｉめっき層の上に形成されている。しかし、Ａｕめっき層は、０．０５μｍ程度の非常に薄い膜厚であり、はんだ合金中への拡散によりはんだ付け時に消失する。したがって、本発明において種々の特性を評価する際に、Ａｕめっき層やその他の貴金属めっき層が特に考慮される必要はない。
　本発明において、はんだ合金の合金組成を限定した理由は以下の通りである。
　Ｂｉの含有量は３１～５９％である。Ｂｉははんだ合金の融点を低下させる。Ｂｉの含有量が３１％より少ないと融点が高くはんだ付け時に基板が歪む。Ｂｉの含有量が５９％よりに多いと、Ｂｉの析出により引張強度および延性が劣化する。Ｂｉの含有量は、好ましくは３２～５８％であり、より好ましくは３５～５８％である。
　Ｃｕの含有量は０．３～１．０％である。Ｃｕは、無電解Ｎｉめっき層中のＮｉのはんだ合金中への拡散を抑制し、Ｎｉめっき層とはんだ接合部との界面に生成するＰリッチ層の成長を抑制する。また、Ｃｕの拡散も抑制するため、無電解Ｎｉめっき処理が行われていないＣｕ電極とはんだ接合部との接合界面及びはんだ合金中に生成される脆いＳｎＣｕ化合物の過剰な形成を抑制し、はんだ継手のせん断強度が高まる。Ｃｕの含有量が０．３％より少ないと、Ｐリッチ層やＳｎＣｕ化合物の過剰な形成を抑制することができず、せん断強度が低下する。Ｃｕの含有量が１．０％より多いと、はんだ合金中にＳｎとの金属間化合物が過剰に形成され、はんだ合金の延性が低下する。また、はんだ合金の融点が著しく上昇して、はんだ合金のぬれ性が低下する。さらに、基板の歪みが発生することにより作業性が悪化する。Ｃｕの含有量は、好ましくは０．３～０．８％であり、より好ましくは０．３～０．７％である。
　Ｎｉの含有量は０．０１～０．０６％である。Ｎｉを添加することにより、Ｃｕが有するＮｉの拡散を抑制する効果を助長し、Ｐリッチ層の成長を抑制してさらにせん断強度が向上する効果を発現する。Ｎｉの含有量が０．０１％より少ないと、せん断強度が向上する効果を発揮することができない。Ｎｉの含有量が０．０６％より多いと、はんだ合金中にＳｎとＮｉとの化合物が過剰に形成されるために延性が低下する。Ｎｉの含有量は好ましくは０．０２～０．０５である。
　本発明に係る鉛フリーはんだ合金は、任意元素として、ＰおよびＧｅからなる群から選択される１種以上を合計で０．００３～０．０５％含有してもよい。これらの元素を添加することにより、添加しない場合と同様にＰリッチ層の成長を抑制してはんだ継手のせん断強度を高めるとともに、はんだ合金が酸化により黄色などに変色すること（以下、適宜上、「黄変」と称する。）を防止する効果を発揮する。本発明に係る鉛フリーはんだ合金は、はんだボールの形態で使用することもできる。はんだボールは、モジュール基板に載置されリフローにより電極に搭載される。この後、画像認識によってはんだ付けされているか否かの判定が行われる。もし、リフロー時の加熱によりはんだボールがリフロー雰囲気中に混入してしまう不可避的な酸素により黄変した場合、黄変後のはんだボールは、画像認識においてはんだボールを認識することができずに不具合と判断される。そのため、はんだボールはリフロー時に黄変しない方がよい。本発明に係る鉛フリーはんだ合金は、ＰおよびＧｅからなる群から選択される１種以上を含有することにより、酸素などによる変色を防止することで、バンプ品質検査におけるエラーを回避することができる。
　このような観点から、好ましくはＰを含有し、さらに好ましくはＰおよびＧｅを含有する。Ｐの含有量は、好ましくは０．００１～０．０３％であり、より好ましくは０．０１～０．０７％である。Ｇｅの含有量は、好ましくは０．００１～０．０３％であり、より好ましくは０．０１～０．０３％である。
　このような合金組成からなる本発明に係る鉛フリーはんだ合金は、はんだ継手のはんだ接合部をせん断除去した際に、電極の無電界Ｎｉめっき層が露出することがない。前述のように、本発明に係る鉛フリーはんだは、無電界Ｎｉめっき層中のＮｉの拡散を抑制し、めっき層の表面に形成されるＰリッチ層の成長を抑制することができるためである。この結果、本発明に係る鉛フリーはんだ合金では、接合部界面の機械的特性、特にせん断強度が著しく向上する。
　また、本発明に係る鉛フリーはんだ合金は、プリフォーム、ワイヤ、はんだペースト、はんだボール等の形態で使用することができる。本発明に係る鉛フリーはんだ合金は、高い引張強度および延性を有し、かつ、高いせん断強度を有する。このため、はんだボールの形態で使用する場合、従来のはんだボールより小さくすることが可能となり、電子部品などに用いる基板の薄型化や電極の小型化に十分に対応し得るものである。
　本発明に係る鉛フリーはんだ合金は、ＩＣチップなどのＰＫＧ（Ｐａｃｋａｇｅ）の電極とＰＣＢ（ｐｒｉｎｔｅｄ　ｃｉｒｃｕｉｔ　ｂｏａｒｄ）などの基板の電極とを接合してはんだ継手を形成することができる。ここで、本発明に係る鉛フリーはんだ合金は、前述のように、高い延性および引張強度を維持しつつ、はんだ継手に適用された場合には優れたせん断強度を有する。このため、リフロー時に基板にわずかな歪みが生じても、電極とはんだ接合部とが破断せず、従来よりも薄い基板を使用したとしても優れた接続信頼性を確保することができる。本発明に係るはんだ継手は、電極およびはんだ接合部で構成される。はんだ接合部とは、主にはんだ合金で形成されている部分を示す。
　本発明に係る基板は、板厚が５ｍｍ以下であり、Ｎｉめっき層を有する複数のＣｕ電極を有し、Ｃｕ電極の各々は本発明に係る鉛フリーはんだ合金を用いて形成されたはんだ継手を有する。本発明に係る基板は、融点が低く優れた延性を示す本発明に係る鉛フリーはんだ合金を用いて継手が形成されているため、板厚が５ｍｍ以下であっても反りの発生を抑制し、優れた接続信頼性を有する。基板の板厚は、好ましくは３ｍｍ以下であり、より好ましくは２ｍｍ以下である。基板の材質としては、Ｓｉ、ガラスエポキシ、紙フェノール、ベークライトなどが挙げられる。基板が有する電極としてはめっき処理が行われていないＣｕ電極、Ｎｉなどのめっき処理が施されたＣｕ電極、Ｎｉ電極などが挙げられる。
　本発明に係る鉛フリーはんだ合金は、高純度材または低α線材を使用することにより、低α線の鉛フリーはんだ合金を製造することが可能となる。このはんだ合金をメモリ周辺などに使用することで、ソフトエラーを防止することができる。
　表１に示すはんだ合金を作製した。このはんだ合金を用いて、はんだ合金の融点、引張強度、伸び（延性）を求め、このはんだ合金を使用して形成したはんだ継手を用いて、Ｐリッチ層の膜厚測定、せん断強度、およびプレート露出率の露出率を以下に示すように求めた。結果を表１に示す。
　（はんだ合金の融点）
　融点は、ＤＳＣ（Ｄｉｆｆｅｒｅｎｔｉａｌ　ｓｃａｎｎｉｎｇ　ｃａｌｏｒｉｍｅｔｒｙ）（セイコーインスツルメンツ社製：ＤＳＣ６２００）を用いて、昇温速度５℃／ｍｉｎの条件で融点（℃）を測定した。で融点（℃）を測定した。
　（引張強度、伸び（延性））
　引張強度試験機（島津製作所社製、ＡＵＴＯ　ＧＲＡＰＨ　ＡＧ－２０ｋＮ）を用い、ストロークスピードを６．０ｍｍ／ｍｉｎとし、歪みスピードを０．３３％／ｓｅｃとして、表１に示すはんだ合金を所定の形状に形成し、引張強度（ＭＰａ）および伸び（％）を測定した。引張強度が７０ＭＰａ以上であり、伸びが６５％以上であれば、実用上問題なく使用することができる。
　(Ｐリッチ層の膜厚)
　表１に示すはんだ合金を、基板の厚みが１．２ｍｍであり電極の大きさが直径０．２４ｍｍであるＰＣＢの無電界Ｎｉ／Ａｕめっき処理が行われたＣｕ電極（以下、単に、「無電解Ｎｉ／Ａｕ電極」と称する。）と接合してはんだ付けを行った。はんだ付けは、各はんだ合金から作製した直径０．３ｍｍのはんだボールを、水溶性フラックス（千住金属社製：ＷＦ－６４００）を用いて基板上に水溶性フラックスを塗布してからボールを搭載し、ピーク温度を２１０℃とするリフロープロファイルでリフロー法によりはんだ付けを行い、はんだ継手が形成された試料を得た。
　各試料のＰリッチ層の膜厚は、ＳＥＭ写真に基づいて、はんだ接合部とＮｉめっき層との接合界面近傍の断面観察により決定された。具体的には、電子顕微鏡（日本電子社製：ＪＳＭ－７０００Ｆ）を用いた写真から分析し、Ｐリッチ層とＰリッチ層ではない層とに色分けをして区別し、Ｐリッチ層の膜厚（μｍ）を測定した。同じ条件で作製したサンプル５つについて、同様にＰリッチ層の膜厚を測定し、その平均値をＰリッチ層の膜厚とした。
　（せん断強度）
　前述のＰＣＢの電極について、めっき処理が行われていないＣｕ電極（以下、単に、「Ｃｕ電極」と称する。）、および無電界Ｎｉ／Ａｕ電極の２種類を用い、表１に示す各はんだ合金と接合してはんだ付けを行った。このサンプルを、せん断強度測定装置（Ｄａｇｅ社製：ＳＥＲＩＥＳ　４０００ＨＳ）により、１０００ｍｍ／ｓｅｃの条件でせん断強度（Ｎ）を測定した。せん断強度が、Ｃｕ電極では３．００Ｎ以上であり、かつ無電界Ｎｉ／Ａｕ電極では２．６０Ｎ以上であれば、実用上問題なく使用することができる。
　（プレート露出率）
　せん断強度試験後のサンプルについて、はんだ接合部をせん断除去した後における無電界Ｎｉ／Ａｕ電極の表面ＳＥＭ写真を撮影した。そして、ＥＤＳ分析を実施することによりＮｉが露出する領域を特定し、西華産業株式会社製の画像解析ソフト（Ｓｃａｎｄｉｕｍ）によりその領域の面積を求めた。最後に、Ｎｉめっき層が露出している領域の面積を電極全体の面積で除して、プレート露出率（％）を算出した。
Figure JPOXMLDOC01-appb-T000001
　表１に示すように、実施例１～３３では、いずれも、融点が１８５度以下、引張強度が７０ＭＰａ以上、伸びが６５％以上、Ｐリッチ層の膜厚が０．０１４μｍ以下、Ｃｕ電極を用いて形成したはんだ継手のせん断強度が３．００Ｎ以上、無電界Ｎｉ／Ａｕ電極を用いて形成したはんだ継手のせん断強度が２．６０Ｎ以上であり、プレート露出率はいずれも０％であった。
　一方、ＣｕおよびＮｉを含有しないＳｎ－５８Ｂｉはんだ合金である比較例１は、Ｐリッチ層の膜厚が厚く、Ｃｕ電極および無電界Ｎｉ／Ａｕ電極でのせん断強度が著しく劣り、プレート露出率も高い値を示した。
　Ｎｉを含有しない比較例２およびＣｕを含有しない比較例３は、いずれもＰリッチ層の膜厚が厚く、Ｃｕ電極および無電界Ｎｉ／Ａｕ電極でのせん断強度が著しく劣った。特に、Ｃｕを含有しない比較例３ではプレート露出率が高い値を示した。
　Ｂｉが少ない比較例４では、合金の融点が高く伸びも劣るため、基板の歪みを確認した。Ｂｉが多い比較例５では、合金の引張強度や伸びが劣った。また、無電界Ｎｉ／Ａｕ電極でのせん断強度が劣り、はんだ合金の伸びも劣った。
　Ｃｕが少ない比較例６では、無電界Ｎｉ／Ａｕ電極でのせん断強度が劣り、Ｐリッチ層の膜厚が厚くプレート露出率が高い値を示した。Ｎｉを含有せずＣｕが多い比較例７およびＣｕが多い比較例８では、融点が高く、伸びが劣り、無電解Ｎｉ／Ａｕ電極でのせん断強度も劣った。
　Ｎｉの含有量が少ない比較例９では、Ｃｕ電極でのせん断強度が劣った。Ｎｉの含有量が多い比較例１０では、合金の伸びが著しく劣った。
　図１は、無電解Ｎｉ／Ａｕ電極にＳｎ－５８Ｂｉはんだ合金を用いてはんだ付けを行い、はんだ接合部をせん断除去した後における、電極せん断面のＳＥＭ写真である。比較例１、３、５および６では、いずれも図１に示すように、Ｎｉめっき層が露出した。これは、Ｐリッチ層が成長し、Ｐリッチ層と無電解Ｎｉ／Ａｕめっき層との界面で剥がれが生じたためであると考えられる。
　図２（ａ）および図２（ｂ）は、無電解Ｎｉ／Ａｕ電極にはんだ付けを行ったはんだ継手における、はんだ接続部と電極との界面近傍の断面ＳＥＭ写真であり、図２（ｃ）および図２（ｄ）は、無電解Ｎｉ／Ｐｄ／Ａｕめっき処理が行われたＣｕ電極にはんだ付けを行ったはんだ継手における、はんだ接続部と電極との界面近傍の断面ＳＥＭ写真である。図２（ａ）および図２（ｃ）より、Ｓｎ－５８Ｂｉ（比較例１：無電界Ｎｉ／Ａｕ電極でのせん断強度は２．０１Ｎである。）では、Ｃｕを含有していないことにより、Ｐリッチ層が成長していることが明らかになった。一方、図２（ｂ）および図２（ｄ）より、本発明に係るＳｎ－４０Ｂｉ－０．５Ｃｕ－０．０３Ｎｉ（実施例７：無電界Ｎｉ／Ａｕ電極でのせん断強度は２．８５Ｎである。）では、ＣｕおよびＮｉを所定量含有していることにより、Ｐリッチ層の成長が抑制されており、これらの写真からＰリッチ層を確認することができなかった。このように、図２によれば、Ｐリッチ層の成長を抑制することによりせん断強度が著しく向上することがわかった。
　表１の結果に基づいて、はんだ合金のＣｕおよびＮｉの含有量と、Ｃｕ電極、無電解Ｎｉ／Ａｕ電極および伸びとの関係を示す図を図３～８に示す。図３～５では、Ｂｉの含有量が４０％で、Ｎｉの含有量が０．０３％である、実施例６～９ならびに比較例３、６および７の結果を用いた。図６～８では、Ｂｉの含有量が４０％で、Ｃｕの含有量が０．５％である、実施例７、１０および１１、ならびに比較例２、８および９の結果を用いた。図３は、Ｓｎ－４０Ｂｉ－（０～１．１）Ｃｕ－０．０３Ｎｉはんだ合金の、Ｃｕ含有量とせん断強度（Ｃｕ電極）との関係を示す図である。図４は、Ｓｎ－４０Ｂｉ－（０～１．１）Ｃｕ－０．０３Ｎｉはんだ合金の、Ｃｕの含有量とせん断強度（無電解Ｎｉ／Ａｕ電極）との関係を示す図である。図５は、Ｓｎ－４０Ｂｉ－（０～１．１）Ｃｕ－０．０３Ｎｉはんだ合金の、Ｃｕの含有量と合金の伸びとの関係を示す図である。図３～図５によれば、Ｃｕ電極のせん断強度が３．０Ｎ以上を示し、Ｎｉ電極のせん断強度が２．６Ｎ以上を示し、伸びが６５％以上を示すＣｕの範囲は、０．３～１．０％であることが明らかとなった。
　図６は、Ｓｎ－４０Ｂｉ－０．５Ｃｕ－（０～０．０７）Ｎｉはんだ合金の、Ｃｕの含有量とせん断強度（Ｃｕ電極）との関係を示す図である。図７は、Ｓｎ－４０Ｂｉ－０．５Ｃｕ－（０～０．０７）Ｎｉはんだ合金の、Ｃｕの含有量とせん断強度（無電解Ｎｉ／Ａｕ電極）との関係を示す図である。図８は、Ｓｎ－４０Ｂｉ－０．５Ｃｕ－（０～０．０７）Ｎｉはんだ合金の、Ｃｕの含有量と合金の伸びとの関係を示す図である。図６～８によれば、Ｃｕ電極のせん断強度が３．０Ｎ以上を示し、Ｎｉ電極のせん断強度が２．６Ｎ以上を示し、伸びが６５％以上を示すＮｉの範囲は、０．０１～０．０６％であることが明らかとなった。

Claims (6)

  1. 質量％で、Ｂｉ：３１～５９％、Ｃｕ：０．３～１．０％、Ｎｉ：０．０１～０．０６％、残部Ｓｎからなる合金組成を有する鉛フリーはんだ合金。
  2. 　さらに、質量％で、ＰおよびＧｅからなる群から選択される１種以上を合計で０．００３～０．０５％を含有する、請求項１に記載の鉛フリーはんだ合金。
  3. 　Ｎｉめっき層を有するＣｕ電極上に請求項１または２に記載の鉛フリーはんだ合金を用いて形成されたはんだ継手。
  4. 　前記Ｎｉめっき層はＰを含有する無電解めっき層である、請求項３に記載のはんだ継手。
  5. 　板厚が５ｍｍ以下であり、Ｎｉめっき層を有する複数のＣｕ電極を有し、前記Ｃｕ電極の各々は請求項１または２に記載の鉛フリーはんだ合金を用いて形成されたはんだ継手を有する基板。
  6. 　前記Ｎｉめっき層はＰを含有する、請求項５に記載の基板。
PCT/JP2013/061531 2013-04-18 2013-04-18 鉛フリーはんだ合金 WO2014170994A1 (ja)

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SG11201508575XA SG11201508575XA (en) 2013-04-18 2013-04-18 Lead-free solder alloy
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US14/785,179 US20160074971A1 (en) 2013-04-18 2013-04-18 Lead-Free Solder Alloy
CN201380075708.7A CN105121677A (zh) 2013-04-18 2013-04-18 无铅软钎料合金
KR1020187013242A KR101941831B1 (ko) 2013-04-18 2013-04-18 땜납 조인트 및 기판
JP2014520097A JP5578301B1 (ja) 2013-04-18 2013-04-18 鉛フリーはんだ合金
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DK13882069.1T DK2987876T3 (en) 2013-04-18 2013-04-18 LEAD-FREE SUBSTANCE Alloy
MYPI2015002555A MY160989A (en) 2013-04-18 2013-04-18 Lead-free solder alloy
TW103112960A TWI618798B (zh) 2013-04-18 2014-04-09 Lead-free solder alloy
PH12015502404A PH12015502404B1 (en) 2013-04-18 2015-10-16 Lead-free solder alloy
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KR101941831B1 (ko) 2019-01-23
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CN110153588A (zh) 2019-08-23
CN105121677A (zh) 2015-12-02
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MY160989A (en) 2017-03-31
EP2987876A1 (en) 2016-02-24
KR20180052784A (ko) 2018-05-18
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ES2702152T3 (es) 2019-02-27
DK2987876T3 (en) 2019-01-21
EP2987876B1 (en) 2018-10-03
PH12015502404B1 (en) 2016-02-22
JP5578301B1 (ja) 2014-08-27
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JPWO2014170994A1 (ja) 2017-02-16
SG11201508575XA (en) 2015-11-27

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