WO2014162775A1 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 170
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 170
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000005530 etching Methods 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 40
- 230000008569 process Effects 0.000 description 19
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
Description
(1)本実施の形態に係る炭化珪素半導体装置1の製造方法は以下の工程を有している。第1の主面80bと、第1の主面80bと反対の第2の主面80aとを有する炭化珪素基板80が準備される。第1の主面80bをエッチングすることで、第1の主面80bにマイクロパイプを含むエッチピット3aが出現する。第1の主面80bにおけるマイクロパイプの2次元位置情報が取得される。炭化珪素基板が複数のチップC12~C65に切断される。2次元位置情報に基づいてチップC12~C65の選別が行われる。第1の主面80bは珪素面または珪素面から10°以下の角度オフした面である。
(実施の形態1)
図1および図2を参照して、本実施の形態に係る炭化珪素半導体装置としてのMOSFET1の構造について説明する。
実施の形態1に係るMOSFET1によれば、第1の主面80bにおけるマイクロパイプのエッチピット3aの2次元位置情報が取得され、当該2次元位置情報に基づいてチップの選別が行われる。それゆえ、マイクロパイプが炭化珪素基板80の第1の主面80bのどの位置に存在していても、マイクロパイプを含むチップを検出することができる。結果として、精度良くマイクロパイプを含むチップを選別することができる。
(実施の形態2)
次に、実施の形態2に係るMOSFET1の製造方法について図4を参照して説明する。なお、実施の形態2に係る製造方法によって製造されたMOSFET1の構造は実施の形態1と同様である。
実施の形態2に係るMOSFET1の製造方法によれば、炭化珪素エピタキシャル層81の表面10aにチップC12~C65の切断位置を示すパターン2が形成される。炭化珪素基板80を複数のチップC12~C65に切断する工程では、パターン2に沿って炭化珪素基板80が切断される。切断位置を示すパターンを形成することにより、簡易な方法でマイクロパイプが存在するチップを特定することができる。
Claims (8)
- 第1の主面と、前記第1の主面と反対の第2の主面とを有する炭化珪素基板を準備する工程と、
前記第1の主面をエッチングすることで、前記第1の主面にマイクロパイプのエッチピットを含むエッチピットを出現させる工程と、
前記第1の主面における前記マイクロパイプの2次元位置情報を取得する工程と、
前記炭化珪素基板を複数のチップに切断する工程と、
前記2次元位置情報に基づいて前記チップの選別を行う工程とを備え、
前記第1の主面は珪素面または前記珪素面から10°以下の角度オフした面である、炭化珪素半導体装置の製造方法。 - 前記第2の主面に接して炭化珪素エピタキシャル層を形成する工程をさらに備えた、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素エピタキシャル層の表面に前記チップの切断位置を示すパターンを形成する工程をさらに備え、
前記炭化珪素基板を前記複数のチップに切断する工程では、前記パターンに沿って前記炭化珪素基板が切断される、請求項2に記載の炭化珪素半導体装置の製造方法。 - 前記チップを選別する工程は、前記マイクロパイプの前記2次元位置情報を前記パターンの位置と比較することにより行われる、請求項3に記載の炭化珪素半導体装置の製造方法。
- 前記2次元位置情報を前記チップの識別番号に対応させる工程をさらに備えた、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記マイクロパイプを含む前記エッチピットを出現させる工程の後、前記第1の主面を研磨する工程をさらに備えた、請求項5に記載の炭化珪素半導体装置の製造方法。
- 前記エッチピットの少なくとも一部を除去するように前記第1の主面を研削する工程をさらに備えた、請求項1~6のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記第1の主面を研削する工程の後、前記第1の主面に接して電極を形成する工程をさらに備えた、請求項7に記載の炭化珪素半導体装置の製造方法。
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EP14778263.5A EP2983198A4 (en) | 2013-04-01 | 2014-02-07 | METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT |
CN201480009879.4A CN105074897A (zh) | 2013-04-01 | 2014-02-07 | 制造碳化硅半导体器件的方法 |
US14/772,054 US20160020156A1 (en) | 2013-04-01 | 2014-02-07 | Method for manufacturing silicon carbide semiconductor device |
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JP2016127177A (ja) * | 2015-01-06 | 2016-07-11 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法 |
JP6999101B2 (ja) * | 2017-02-16 | 2022-01-18 | 国立大学法人埼玉大学 | エッチング方法 |
JP7061510B2 (ja) * | 2018-04-27 | 2022-04-28 | 株式会社 日立パワーデバイス | 炭化ケイ素半導体装置の製造方法および検査システム |
US20210320005A1 (en) * | 2018-07-20 | 2021-10-14 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device |
JP7065729B2 (ja) * | 2018-08-20 | 2022-05-12 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP7379952B2 (ja) * | 2019-09-02 | 2023-11-15 | 株式会社レゾナック | SiCインゴットの評価方法、SiCデバイスの製造方法およびSiC種結晶の評価方法 |
JP7438162B2 (ja) | 2021-04-15 | 2024-02-26 | 三菱電機株式会社 | 炭化珪素半導体装置の検査方法および炭化珪素半導体装置の製造方法 |
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EP2490247A1 (en) * | 2009-10-13 | 2012-08-22 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate manufacturing method and silicon carbide substrate |
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EP2587526A1 (en) * | 2010-06-23 | 2013-05-01 | Nissan Chemical Industries, Ltd. | Composition for polishing silicon carbide substrate and method for polishing silicon carbide substrate |
JP5699878B2 (ja) * | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
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US20160020156A1 (en) | 2016-01-21 |
JP2014203833A (ja) | 2014-10-27 |
EP2983198A1 (en) | 2016-02-10 |
EP2983198A4 (en) | 2016-08-31 |
CN105074897A (zh) | 2015-11-18 |
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