WO2014125759A1 - 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法 - Google Patents
両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法 Download PDFInfo
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- WO2014125759A1 WO2014125759A1 PCT/JP2014/000134 JP2014000134W WO2014125759A1 WO 2014125759 A1 WO2014125759 A1 WO 2014125759A1 JP 2014000134 W JP2014000134 W JP 2014000134W WO 2014125759 A1 WO2014125759 A1 WO 2014125759A1
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- Prior art keywords
- carrier
- double
- insert material
- polishing
- wafer
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 121
- 238000001035 drying Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 60
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 6
- 239000004744 fabric Substances 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 23
- 238000005259 measurement Methods 0.000 description 22
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000002002 slurry Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012050 conventional carrier Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/241—Methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
Definitions
- the present invention relates to a method for manufacturing a carrier for a double-side polishing apparatus that is disposed between upper and lower surface plates to which a polishing cloth of a double-side polishing apparatus is affixed, and a carrier for the double-side polishing apparatus.
- the present invention relates to a method for polishing both sides of a wafer.
- the wafer When simultaneously polishing both sides of the wafer by polishing or the like, the wafer is held by a carrier for a double-side polishing apparatus.
- the carrier is formed with a thickness thinner than that of the wafer, and includes a holding hole for holding the wafer at a predetermined position between the upper surface plate and the lower surface plate of the double-side polishing apparatus.
- the wafer is inserted and held in this holding hole, and the upper and lower surfaces of the wafer are sandwiched by a polishing tool such as a polishing cloth provided on the opposing surfaces of the upper surface plate and the lower surface plate, and polishing is performed while supplying an abrasive to the polishing surface. Is done.
- the carrier used for the double-side polishing of such a wafer is mainly made of metal such as titanium or stainless steel or glass epoxy.
- a resin insert such as engineering plastic is attached along the inner periphery of the holding hole in order to protect the peripheral edge of the wafer from damage by the carrier. In this way, it is possible to prevent the peripheral edge of the wafer from being damaged by attaching and polishing the insert material between the carrier holding hole and the wafer.
- Patent Document 3 As a manufacturing method of such a carrier for a double-side polishing apparatus, for example, as described in Patent Document 1, there is a method of manufacturing an insert material fixed to the carrier by a technique such as fitting, adhesion, or injection molding. . Further, Patent Document 2 describes that after the insert material is fitted so that the insert material has the same height as the carrier, the thickness is made uniform by polishing. In addition, there is a manufacturing method (patent document 3) in which a locking groove provided on the inner periphery of the holding hole of the carrier main body and a locking protrusion provided on the outer periphery of the insert are fitted (Patent Document 3). It is trying to prevent the outer periphery of the workpiece from sagging due to wear of the insert by preventing the wear during workpiece polishing.
- the double-side polishing apparatus for example, usually about 5 wafers per batch are polished simultaneously.
- the double-side polishing apparatus carrier having the holding holes as described above is set by the number of sheets, and simultaneously, the double-side polishing of the number of wafers is performed.
- the flatness was uneven in a plurality of wafers that were simultaneously polished on both sides in this way.
- the present invention has been made in view of the above problems, and provides a method for manufacturing a carrier for a double-side polishing apparatus and a double-side polishing method for a wafer that can suppress variations in flatness of polishing wafers in a batch.
- the purpose is to provide.
- the present invention provides a holding hole for holding a wafer during polishing formed on a carrier body disposed between upper and lower surface plates to which a polishing cloth of a double-side polishing apparatus is attached.
- a method for manufacturing a carrier for a double-side polishing apparatus in which an insert material in contact with a peripheral edge portion of the wafer to be held is fitted and bonded, and the insert material is subjected to lapping and polishing, and then the lapping The insert material that has been processed and polished is fitted into the holding hole of the carrier body, and bonded and dried while applying a load to the fitted insert material along a direction perpendicular to the main surface of the carrier body.
- the manufacturing method of the carrier for double-side polish apparatuses characterized by manufacturing the carrier for double-side polish apparatuses by performing.
- Such a method for producing a carrier for a double-side polishing apparatus of the present invention can improve the uniformity of the carrier to be produced. More specifically, the lapping and polishing processes can suppress variations in the thickness of the insert material for each carrier during carrier production. Moreover, the positional offset of the carrier main body and insert material for every carrier at the time of manufacture of a carrier can be suppressed by the adhesion
- the uniformity of the carrier is important for suppressing variations in the flatness of the polishing wafer within the batch. Since the carrier manufactured according to the present invention is highly uniform as described above, if a plurality of wafers are simultaneously polished on both sides using such a plurality of carriers, the variation in the flatness of the polishing wafer in the same batch is suppressed. Is possible. That is, a polishing wafer having a uniform quality can be provided.
- the insert material for lapping and polishing a material thicker by 20 ⁇ m or more than the target thickness after lapping and polishing can be prepared. In this way, the thickness variation even after processing to the target thickness due to the fact that there is already a part thinner than the target thickness before processing due to the in-plane thickness variation existing from the source of the insert material. Can be prevented from remaining.
- the load applied to the insert material can be 100 to 300 g / cm 2 .
- the load applied to the insert material can be 100 to 300 g / cm 2 .
- it can prevent more effectively that it is not pressed in and it adhere
- 300 g / cm ⁇ 2 > or less it can further prevent that an insert material is pushed in more than necessary and position shift arises by it.
- the carrier body fitted with the insert material is placed on a horizontal base, and a weight is placed on the insert material,
- the horizontal base and the weight those having a flatness within the load surface of 3 ⁇ m or less can be used.
- the present invention also provides a plurality of double-side polishing apparatus carriers manufactured by the above-described double-side polishing apparatus carrier manufacturing method, each of which holds a wafer in the holding hole and is disposed between the upper and lower surface plates of the double-side polishing apparatus. And providing a double-side polishing method for a wafer, wherein a plurality of wafers are simultaneously double-side polished.
- Such a double-side polishing method of the present invention can suppress variations in the flatness of the polishing wafer within the same batch, so that a polishing wafer having a uniform quality can be provided.
- a highly uniform carrier for a double-side polishing apparatus can be provided. And thereby, the variation in the flatness of the polishing wafer in the batch can be suppressed in double-side polishing.
- the present inventors have conducted intensive research on the flatness variation occurring in the polishing wafer in the same batch.
- the uniformity of the carrier is important in order to make the flatness of the polishing wafers uniform within the batch. It has been found that there is a problem that the carrier's geometric shape is not necessarily uniform.
- the present inventors apply lapping and polishing to the insert material in advance when fitting the insert material into the holding hole of the carrier, and adhere and dry the carrier to the carrier body while applying a load to the insert material.
- a highly uniform carrier can be provided, thereby reducing variations in the quality of the polishing wafer in the same batch, and the present invention has been completed.
- FIG. 1 is a flowchart showing an example of a method for producing a carrier for a double-side polishing apparatus according to the present invention. At least the process of lapping and polishing the insert material, and the insert material subjected to these processes is fitted into the holding hole of the carrier body and inserted along the direction perpendicular to the main surface of the carrier body It is only necessary to include a step of bonding and drying while applying a load to the material. In addition to these steps, various steps can be appropriately added as shown in FIG.
- Step 1 Cutting out insert material (from plate to ring)
- an insert material made of an engineering plastic such as EG or AFRP is prepared and cut into a shape suitable for lapping and polishing.
- it can be cut out from a plate-shaped insert material into a ring shape larger than the shape (insert shape) when finally fitting into the holding hole of the carrier body hole.
- it can be cut out slightly larger as described above.
- it is not limited to a ring shape, and the shape to be cut out can be appropriately determined so that the above processing can be performed appropriately.
- a plate-like insert material having a thickness of 20 ⁇ m or more thicker than the target thickness can be prepared and cut out.
- a machining allowance sufficient to remove the thickness variation that originally exists by lapping or the like. Thereby, it is possible to more reliably prevent the thickness variation from remaining after lapping or the like, and it is possible to manufacture a highly uniform carrier.
- lapping is performed on the cut ring-shaped insert material.
- the lapping conditions are not particularly limited, and can be determined as appropriate.
- a ring carrier suitable for lapping the ring-shaped insert material is prepared, and the ring-shaped insert material and the carrier for the ring are sandwiched between upper and lower cast iron surface plates, and a GP2000 slurry. It can carry out using the slurry for wraps.
- polishing Next, the ring-shaped insert material after lapping is polished.
- the polishing conditions are not particularly limited, and can be determined as appropriate.
- a ring-shaped insert material and a ring carrier are sandwiched between upper and lower surface plates to which a hard foamed polyurethane pad is attached, and a polishing slurry such as a cerium oxide slurry can be used.
- the ring-shaped insert material is cut into a shape (insert shape) that is actually fitted into the holding hole of the carrier body and in contact with the peripheral edge of the wafer held during double-side polishing.
- the thickness variation of the insert material for each carrier is one of the causes for the variation in the flatness of the polishing wafer in the batch. Therefore, the in-plane thickness variation of the insert material can be improved to 2 ⁇ m or less, for example, and uniform for each carrier.
- the conventional method shown in FIG. 13 merely cuts out a plate-like insert material into an insert shape. Therefore, there is an in-plane thickness variation inherent in the resin used as the insert material, etc., and the thickness variation of the insert material occurs for each carrier. Become. Unlike such conventional methods, the thickness variation of the insert material for each carrier can be greatly improved by performing lapping or the like as in the present invention.
- An adhesive is applied to the inner peripheral portion of the holding hole of the carrier body and the fitting portion such as the outer periphery of the insert material (insert shape).
- the type of the adhesive is not particularly limited, and an appropriate adhesive such as an epoxy type can be used.
- metal such as titanium and stainless steel, or the thing made from glass epoxy can be used, for example.
- the insert material (insert shape) is fitted into the holding hole of the carrier body.
- the fitting method is not particularly limited as long as it can be properly fitted.
- FIG. 2 shows an example of this bonding and drying method.
- the carrier body with the insert material fitted in the holding hole is laid on a horizontal base, and a thin plate is placed on the insert material in the holding hole along the direction perpendicular to the main surface of the carrier body.
- a weight is placed through and a load is applied.
- a weight may be separately placed on the carrier body.
- the insert material is bonded to the carrier body while applying a load in this way, and further, the adhesive is dried and solidified (load bonding method).
- the average angle of the insert material with respect to the carrier body can be 0.06 ° or less in absolute value, and the parallelism of the insert material with respect to the carrier body can be improved, thereby making the average angle uniform for each carrier. Can increase the sex.
- the load applied to the insert material at this time is preferably 100 to 300 g / cm 2 .
- the load applied to the insert material at this time is preferably 100 to 300 g / cm 2 .
- it can prevent more effectively that it pushes in insufficiently and it adhere
- 300 g / cm ⁇ 2 > or less it can further prevent that an insert material is pushed in more than necessary and position shift arises by it.
- the above-mentioned horizontal table and weight have a flatness of 3 ⁇ m or less on the respective load surfaces (that is, the mounting surface of the carrier body on the horizontal table and the contact surface of the weight with the insert material or carrier body). Is preferred.
- the flat plate of the contact surface with the carrier main body and the insert material is within 3 ⁇ m because the thin plate also applies a load to the carrier main body and the insert material as one of the weights. It is preferable to use those.
- the flatness is not limited to within 3 ⁇ m, and can be determined according to the required accuracy.
- the method can be determined suitably.
- the flatness can be obtained by measuring the thickness of six locations on a load surface of a horizontal platform or a plate-like weight.
- the number of measurement points is not limited to six, and can be increased or decreased according to labor and required accuracy.
- the method is not limited to the method of measuring the flatness, and can be determined each time.
- the insert material of the present invention In contrast to the method of bonding and drying the insert material of the present invention and the carrier body, in the conventional method shown in FIG. 13, an adhesive is applied to the fitting portion, and the insert material is roller pressed on a horizontal base. Thereafter, the adhesive was dried and fixed in the air with the carrier vertical. At this time, the insert material may not be parallel and horizontal on the lower surface of the carrier, but may be fitted and fixed while being displaced so as to protrude obliquely upward with respect to the carrier body.
- the absolute value of the average angle of the insert material with respect to the carrier body at this time is large, and therefore, the portion protruding obliquely wears unevenly when the workpiece is processed, and this also causes variations in the thickness of the insert material.
- the parallelism of the insert material with respect to the carrier body can be improved by bonding and drying as described above in the present invention.
- Process 8 Final polishing After bonding and drying while applying a load as described above, finish polishing is performed to obtain a target finish thickness. For example, a finish polishing process similar to the conventional one can be performed.
- the carrier in the method for manufacturing a carrier for a double-side polishing apparatus of the present invention, it is possible to suppress variations in the thickness of the insert material and the positional deviation between the insert material and the carrier body, which are caused by the conventional method. That is, the carrier can be manufactured with high uniformity.
- the wafer double-side polishing method of the present invention a plurality of carriers manufactured as described above are prepared, and the upper and lower surface plates on which the polishing cloth of the double-side polishing apparatus is stuck while holding the wafer in each holding hole. Between. Then, the apparatus is driven while supplying the slurry, and the plurality of wafers are simultaneously polished on both sides.
- a highly uniform carrier is used, variations in the flatness of the polishing wafer within the same batch can be suppressed.
- the quality of the polishing wafer can be made much more uniform.
- Example 1 A carrier was produced by the method for producing a carrier for a double-side polishing apparatus of the present invention as shown in FIG. 1, and the wafer was double-side polished using the carrier.
- the target finished thickness (step 8 in FIG. 1) was set to 765 ⁇ m.
- the insert material was EG.
- a plate-like insert material having a thickness of 1000 ⁇ m was cut into a ring shape, and then lapped and polished under the following conditions. Then, it cut out to the insert shape. Table 1 shows lapping conditions and polishing conditions.
- a carrier body made of titanium, and apply an adhesive (two-component curable epoxy resin adhesive) to the insert material cut into the insert shape and the holding hole of the carrier body, The insert material was fitted into the holding hole. Then, as shown in FIG. 2, the carrier body was laid on a horizontal base, and a weight was placed on the main surface of the carrier body and the insert material to bond and dry the insert material and the holding hole. The load applied to the insert material by the weight was 200 g / cm 2 .
- the weight for metal the weight placed on the main surface of the carrier body
- the weight for resin the weight placed on the insert material
- the thin plate etc.
- the plate thickness measurement of each of the six load surfaces A flatness of 3 ⁇ m was used. Then, finish polishing was performed to manufacture a carrier for a double-side polishing apparatus.
- Double-side polishing of a semiconductor silicon wafer having a diameter of 300 mm was performed using the manufactured carrier.
- Five carriers each holding a wafer in each holding hole were set, and 5 wafers per batch were polished on both sides.
- a carrier was manufactured by a conventional carrier manufacturing method for a double-side polishing apparatus as shown in FIG. 13, and the wafer was double-side polished using the carrier.
- a plate-like insert material similar to that of the example was prepared and, unlike the example, was cut directly into an insert shape without performing lapping and polishing.
- a carrier body similar to that of the example was prepared, an adhesive was applied to the insert material cut into the insert shape and the holding hole of the carrier body, and the insert material was fitted into the holding hole. Then, unlike the Examples, the adhesive was dried in the air after roller pressing on a horizontal table. Then, finish polishing was performed to manufacture a carrier for a double-side polishing apparatus.
- Table 2 shows the thickness data of the ring-shaped insert material after lapping and polishing in Examples. The thickness was measured using a micrometer manufactured by Mitutoyo. Measurements were made at 4 points (every 90 °). As shown in Table 2, by performing lapping and polishing, in-plane thickness variation per insert material could be improved to 1 to 2 ⁇ m. And the quality (thickness variation) for every insert material can be made uniform.
- the thickness data of the insert material of the comparative example for comparison with the example, the thickness data of what was cut out from the plate-like insert material into a ring shape was measured. Table 3 shows the measurement results.
- the insert material actually used for manufacturing the carrier has a thickness of about 765 ⁇ m
- Table 3 shows a thickness of 1000 ⁇ m.
- the numerical values in Table 3 are also numerical values before lapping and polishing in the examples.
- those having a thickness of about 765 ⁇ m used in the comparative example also had the same in-plane thickness variation as in Table 3.
- the in-plane thickness variation was 42 ⁇ m at the maximum depending on the insert material. It can also be seen that a variation of 2 ⁇ m occurs at the minimum. Thus, it was confirmed that the quality of the insert material was not uniform.
- FIG. 10 the measurement results of the comparative example are shown in FIG. As shown in FIG. 10, it can be seen that the insert material is fitted diagonally or a large step is generated, and there is variation within the lot.
- FIG. 6 shows the measurement results for the example
- FIG. 11 shows the measurement results for the comparative example.
- the thickness variation of the insert material is suppressed, and the quality is uniform as a whole.
- the thickness variation of each insert material is relatively large, and the size varies greatly from carrier to carrier and varies.
- FIG. 7 shows the measurement results of ESFQRmax of the entire polishing wafers of Examples and Comparative Examples.
- FIG. 8 ((A) Example, (B) Comparative Example) shows the measurement results of ESFQRmax of the polishing wafer divided for each carrier in Examples and Comparative Examples.
- FIG. 9 Example
- FIG. 12 comparativative example
- the variation of the ESFQRmax of the polishing wafer caused by the variation of the used carrier is small and uniform as compared with the comparative example.
- This uniformity is reflected in the histogram of FIG. 7, and the variation ⁇ of ESFQRmax is 4.89 nm, which is a small value.
- the variation ⁇ of ESFQRmax was a large value of 11.06 nm.
- the outer peripheral portion has a uniform shape (here, all sagging) within the batch.
- the outer peripheral portion has a mixed shape and a sagging shape, resulting in non-uniformity in the batch.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
このように、キャリアの保持孔とウェーハとの間にインサート材を取り付けて研磨することでウェーハの周縁部が破損するのを防ぐことができる。
また、インサート材がキャリアの高さと同じになるように、インサート材を嵌合させた後に、研磨加工により厚みを揃えることが特許文献2には記載されている。
また、キャリア本体の保持孔の内周に設けた係止溝とインサート外周に設けた係止突条を勘合させる製造方法もあり(特許文献3)、これによりインサートの位置ズレや脱落等を生じにくくし、ワーク研磨加工時における摩耗を防止して、該インサートの摩耗に伴うワーク外周部の面ダレの防止を試みている。
しかしながら、このようにして同時に両面研磨された複数枚のウエーハにおいてフラットネスにバラツキが生じていることが分かった。
このようにすれば、インサート材の元から存在する面内厚みバラツキによって加工前から既に目標厚さよりも薄い部分が存在してしまうことを起因として、目標厚さに加工した後においてもその厚みバラツキが残存してしまうのを防止することができる。
このように100g/cm2以上とすることによって、押し込みが不十分で位置ズレが生じたまま接着されるのをより効果的に防止することができる。また、300g/cm2以下とすることによって、必要以上にインサート材を押し込んでしまい、それによって位置ズレが生じるのを一層防止することができる。
両面研磨において、同バッチ内での研磨ウエーハにフラットネスのバラツキが生じてしまうことに関し、本発明者らは鋭意研究を行った。
バッチ内での研磨ウエーハのフラットネスを均一に揃える為にはキャリアの均一性が重要となるが、キャリアごとの、インサート材の厚みバラツキや、インサート材とキャリア本体の位置ズレにより、バッチ内でのキャリアの幾何学形状が必ずしも均一ではないことに問題があることが分かった。
なお、少なくとも、インサート材にラップ加工および研磨加工を施す工程、また、これらの工程を施したインサート材をキャリア本体の保持孔に嵌合し、キャリア本体の主面に垂直な方向に沿ってインサート材に荷重をかけながら接着および乾燥を行う工程を含んでいれば良く、これらの工程の他にも、図1に示すように、適宜、種々の工程を追加することができる。
まず、例えばEGやAFRP等のエンジニアリングプラスチックからなるインサート材を用意し、ラップ加工および研磨加工するのに適切な形状に切り出す。例えば、板状のインサート材から、最終的にキャリア本体孔の保持孔に嵌合するときの形状(インサート形状)よりも大きいリング状に切り出すことができる。後工程の、ラップ加工や研磨加工等における取代を考慮して、上記のように少し大きめに切り出すことができる。当然リング状に限定されず、上記加工を適切に行えるよう切り出す形状を適宜決定することができる。
次に、切り出したリング状のインサート材に対してラップ加工を施す。ラップ加工の条件は特に限定されず、適宜決定することができる。
例えば、上記リング状のインサート材をラップ加工するのに適切なリング用キャリアを用意し、目切りのついた鋳鉄製の上下定盤に、リング状のインサート材およびリング用キャリアを挟み込み、GP2000スラリー等のラップ用スラリーを用いて行うことができる。
次に、ラップ加工後のリング状のインサート材に対して研磨加工を施す。研磨加工の条件は特に限定されず、適宜決定することができる。
例えば、硬質発泡ポリウレタンパッドを貼り付けた上下定盤に、リング状のインサート材およびリング用キャリアを挟み込み、酸化セリウムスラリー等の研磨用スラリーを用いて行うことができる。
そして、リング状のインサート材から、実際にキャリア本体の保持孔に嵌合し、両面研磨時に保持するウエーハの周縁部と接するような形状(インサート形状)に切り出す。
前述したように、キャリアごとのインサート材の厚みバラツキは、バッチ内での研磨ウエーハのフラットネスがばらつく原因の一つであるが、本発明の製造方法におけるインサート材は、予め上記工程2、3を行っているので、インサート材の面内厚みバラツキを例えば2μm以下にまで改善することができ、キャリアごとに均一なものとすることができる。
このような従来法とは異なり、本発明のようにラップ加工等を施すことによって、キャリアごとのインサート材の厚みバラツキを大きく改善することができる。
キャリア本体の保持孔の内周部や、インサート材(インサート形状)の外周等の嵌合部分に接着剤を塗布する。接着剤の種類は特に限定されず、エポキシ系のものなど適切なものを用いることができる。
なお、キャリア本体としては、例えば、チタンやステンレスなどの金属性、またはガラスエポキシ製のものとすることができる。
インサート材(インサート形状)をキャリア本体の保持孔へ嵌合する。嵌合方法は特に限定されず、適切に嵌合することができれば良い。
次に、嵌合部分の接着および乾燥を行う。図2に、この接着および乾燥の方法の一例を示す。図2に示すように、インサート材を保持孔に嵌合したキャリア本体を水平台の上に寝かせ、キャリア本体の主面に垂直な方向に沿って、保持孔内のインサート材上に、薄板を介して重りを載置して荷重をかける。このとき、キャリア本体の上にも別個に重りを載せても良い。そして、このようにして荷重をかけながらインサート材をキャリア本体に接着させ、さらには接着剤の乾燥を行い固化させる(荷重接着方式)。
例えば、インサート材のキャリア本体に対する平均角度を絶対値で0.06°以下とすることができ、キャリア本体に対するインサート材の平行度を改善することができ、それによりキャリアごとの上記平均角度の均一性を高めることができる。
ただし、当然これらの荷重に限定されず、その都度決定することが可能である。
このように平面度を3μm以内とすることによって、インサート材への押し込み量がインサート材の周方向で不均一になってしまうのをより効果的に防止することができ、インサート材の位置ズレを防ぐことができるし、またワーク研磨加工時においてインサート材の偏摩耗が生じるのをより一層防ぐことができる。
なお、平面度は3μm以内に限定されるものではなく、求める精度に応じて決めることができる。
なお、当然この平面度の測定方法に限定されず、その都度決定することが可能である。
このような従来法とは異なり、前述したように本発明のようにして接着および乾燥を行うことで、キャリア本体に対するインサート材の平行度を改善することができる。
上記のようにして荷重をかけながら接着および乾燥を行った後は、仕上げ研磨加工を施して狙った仕上げ厚みにする。例えば、従来と同様の仕上げ研磨加工を行うことができる。
このような両面研磨方法であれば、均一性の高いキャリアを用いているので、同バッチ内での研磨ウエーハのフラットネスのバラツキを抑制することができる。不均一なキャリアを用いる従来の両面研磨方法よりも、格段に、研磨ウエーハの品質を揃えることができる。
(実施例)
図1に示すような本発明の両面研磨装置用キャリアの製造方法によってキャリアを製造し、該キャリアを用いてウエーハの両面研磨を行った。
狙い仕上がり厚み(図1の工程8)を765μmに設定した。インサート材としてはEGのものを用いた。1000μmの厚みを有する板状のインサート材をリング状に切り出した後、下記条件でラップ加工および研磨加工を施した。その後、インサート形状に切り出した。
表1にラップ加工条件および研磨加工条件を示す。
そして仕上げ研磨を施し、両面研磨装置用キャリアを製造した。
図13に示すような従来の両面研磨装置用キャリアの製造方法によってキャリアを製造し、該キャリアを用いてウエーハの両面研磨を行った。
実施例と同様の板状のインサート材を用意し、実施例とは異なってラップ加工および研磨加工は施さずに、直接インサート形状に切り出した。
そして仕上げ研磨を施し、両面研磨装置用キャリアを製造した。
まず、インサート材の厚みデータについて説明する。
実施例でのラップ加工および研磨加工後のリング状のインサート材の厚みデータを表2に示す。厚み測定はMitutoyo社製のマイクロメータを用いて行った。4点(90°ごと)について測定した。
表2に示すように、ラップ加工および研磨加工を行うことによって、いずれも、インサート材の1枚あたりの面内厚みバラツキを1~2μmにまで改善することができた。そしてインサート材ごとの品質(厚みバラツキ)を均一にすることができる。
なお、実際にキャリアの製造に用いたインサート材は765μm程度の厚みを有するものであるが、表3には1000μmの厚みのものについて示した。この表3の数値は、実施例でのラップ加工、研磨加工前の数値でもある。また、比較例に用いた765μm程度の厚みを有するものも表3とほぼ同様の面内厚みバラツキであった。
比較例においては、表3に示すように、インサート材によっては面内厚みバラツキが最大で42μmもあった。また最小で2μmのバラツキが生じていることが分かる。このようにインサート材の品質が揃っていないことが確認できた。
平行度の測定については、接触式プロファイラ(TaylorHobson社製のFormTarysurfIntra)を用いた。
実施例の測定結果の例として、キャリア1ロット5枚について各1点ずつ測定した結果を図3(A)~(E)に示す。
なお、FormTarysurfIntraによる測定結果の見方について図4に示す。
測定にはKEYENCE社製のLJ-V7060Kを用いた。キャリア1枚につき測定点は4点とし、その4点からキャリアの平均値を求めた。さらに1ロット5枚について測定した平均値を求めた。実施例および比較例の場合の結果を表4に示す。
なお、図5にLJ-V7060Kによる測定角度の符号の意味する内容を示す。
図6に示すように、実施例では、いずれもインサート材の厚みバラツキが抑制されており、全体的に品質が揃っている。
一方、比較例では、図11に示すように、各々のインサート材の厚みバラツキは比較的大きく、また、その大きさもキャリアごとに大きく異なり、バラツキがある。
実施例および比較例の研磨ウエーハ全体のESFQRmaxの測定結果を図7に示す。
また、実施例および比較例の、キャリアごとに分けた研磨ウエーハのESFQRmaxの測定結果を図8((A)実施例、(B)比較例)に示す。
また、バッチ内における研磨ウエーハごとの外周クロスセクション(4箇所)の測定結果を図9(実施例)、図12(比較例)に示す。
一方、比較例では、図7に示すように、ESFQRmaxのバラツキσは11.06nmという大きな値であった。
一方、比較例では、図12に示すように、外周部の形状がハネているもの、ダレているものが混在しており、バッチ内で不均一になってしまった。
Claims (5)
- 両面研磨装置の研磨布が貼付された上下定盤の間に配設されるキャリア本体に形成され、研磨の際にウエーハを保持するための保持孔に、前記保持するウェーハの周縁部と接するインサート材を嵌合し接着して製造する両面研磨装置用キャリアの製造方法であって、
前記インサート材にラップ加工および研磨加工を施し、その後、
該ラップ加工および研磨加工を施したインサート材を前記キャリア本体の保持孔に嵌合し、
前記キャリア本体の主面に垂直な方向に沿って、前記嵌合したインサート材に荷重をかけながら接着および乾燥を行うことにより両面研磨装置用キャリアを製造することを特徴とする両面研磨装置用キャリアの製造方法。 - 前記ラップ加工および研磨加工するインサート材として、ラップ加工および研磨加工後の目標厚さよりも20μm以上厚いものを用意することを特徴とする請求項1に記載の両面研磨装置用キャリアの製造方法。
- 前記インサート材にかける荷重を、100~300g/cm2とすることを特徴とする請求項1または請求項2に記載の両面研磨装置用キャリアの製造方法。
- 前記嵌合したインサート材に荷重をかけながら接着および乾燥を行うとき、
前記インサート材を嵌合したキャリア本体を水平台に載置し、前記インサート材上に重りを載置して行い、かつ、前記水平台および前記重りとして、その荷重面における平面度が3μm以内のものを用いることを特徴とする請求項1から請求項3のいずれか一項に記載の両面研磨装置用キャリアの製造方法。 - 請求項1から請求項4のいずれか一項に記載の両面研磨装置用キャリアの製造方法により製造した両面研磨装置用キャリアを複数用意し、各々、前記保持孔にウエーハを保持して前記両面研磨装置の上下定盤の間に配設し、複数のウエーハを同時に両面研磨することを特徴とするウエーハの両面研磨方法。
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- 2014-01-15 SG SG11201505594XA patent/SG11201505594XA/en unknown
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- 2014-01-15 CN CN201480006747.6A patent/CN104968473B/zh active Active
- 2014-01-15 DE DE112014000461.8T patent/DE112014000461T5/de active Pending
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US20150375363A1 (en) | 2015-12-31 |
JP5847789B2 (ja) | 2016-01-27 |
JP2014176954A (ja) | 2014-09-25 |
DE112014000461T5 (de) | 2015-09-24 |
CN104968473A (zh) | 2015-10-07 |
TW201446416A (zh) | 2014-12-16 |
KR20150116856A (ko) | 2015-10-16 |
CN104968473B (zh) | 2017-12-01 |
TWI577500B (zh) | 2017-04-11 |
SG11201505594XA (en) | 2015-09-29 |
KR102063846B1 (ko) | 2020-01-08 |
US9764443B2 (en) | 2017-09-19 |
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