WO2014078677A8 - Porte de transmission à large plage de mode commun - Google Patents

Porte de transmission à large plage de mode commun Download PDF

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Publication number
WO2014078677A8
WO2014078677A8 PCT/US2013/070339 US2013070339W WO2014078677A8 WO 2014078677 A8 WO2014078677 A8 WO 2014078677A8 US 2013070339 W US2013070339 W US 2013070339W WO 2014078677 A8 WO2014078677 A8 WO 2014078677A8
Authority
WO
WIPO (PCT)
Prior art keywords
transistors
gate
transmission gate
array
common mode
Prior art date
Application number
PCT/US2013/070339
Other languages
English (en)
Other versions
WO2014078677A1 (fr
Inventor
Sigfredo Emanuel GONZALEZ DIAZ
Original Assignee
Texas Instruments Incorporated
Texas Instruments Japan Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Incorporated, Texas Instruments Japan Limited filed Critical Texas Instruments Incorporated
Priority to CN201380056878.0A priority Critical patent/CN104769844B/zh
Priority to JP2015542828A priority patent/JP6529435B2/ja
Publication of WO2014078677A1 publication Critical patent/WO2014078677A1/fr
Publication of WO2014078677A8 publication Critical patent/WO2014078677A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Landscapes

  • Amplifiers (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Electronic Switches (AREA)

Abstract

L'invention porte sur une porte de transmission (200) qui autopolarise ses transistors (220, 240, 250, 260) afin de produire une polarisation de porte constante qui assure un chemin cohérent permettant un signal d'entrée d'être transféré proprement à la sortie (210) de la porte et protège l'oxyde de grille des transistors en cas de forts signaux d'entrée. Un réseau de transistors appariés (220, 240, 250,260) sont conçus pour être polarisés par un nœud d'entrée de tension (230) et avec une source de courant (270) configurée pour faire circuler un courant de polarisation dans des transistors individuels (240, 250) du réseau de transistors appariés (220, 240, 250, 260). Un collecteur de courant (280) est configuré pour collecter le courant de polarisation de tous les transistors individuels (240, 250) afin de régler une tension de polarisation au niveau d'un nœud d'entrée de tension (230) à un multiple d'une tension grille-source pour les transistors individuels (240, 250) du réseau de transistors appariés (220, 240, 250, 260). Un ensemble de transistors (220, 260) différent est configuré pour fournir un chemin de signal pour un signal d'entrée analogique.
PCT/US2013/070339 2012-11-15 2013-11-15 Porte de transmission à large plage de mode commun WO2014078677A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201380056878.0A CN104769844B (zh) 2012-11-15 2013-11-15 宽广共模范围传输门
JP2015542828A JP6529435B2 (ja) 2012-11-15 2013-11-15 ワイドコモンモードレンジ送信ゲート

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/667,858 2012-11-15
US13/677,858 2012-11-15
US13/677,858 US8975948B2 (en) 2012-11-15 2012-11-15 Wide common mode range transmission gate

Publications (2)

Publication Number Publication Date
WO2014078677A1 WO2014078677A1 (fr) 2014-05-22
WO2014078677A8 true WO2014078677A8 (fr) 2015-10-08

Family

ID=50681139

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/070339 WO2014078677A1 (fr) 2012-11-15 2013-11-15 Porte de transmission à large plage de mode commun

Country Status (4)

Country Link
US (1) US8975948B2 (fr)
JP (1) JP6529435B2 (fr)
CN (1) CN104769844B (fr)
WO (1) WO2014078677A1 (fr)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9288089B2 (en) 2010-04-30 2016-03-15 Ecole Polytechnique Federale De Lausanne (Epfl) Orthogonal differential vector signaling
US8593305B1 (en) 2011-07-05 2013-11-26 Kandou Labs, S.A. Efficient processing and detection of balanced codes
US9362962B2 (en) 2010-05-20 2016-06-07 Kandou Labs, S.A. Methods and systems for energy-efficient communications interface
US9251873B1 (en) 2010-05-20 2016-02-02 Kandou Labs, S.A. Methods and systems for pin-efficient memory controller interface using vector signaling codes for chip-to-chip communications
US9077386B1 (en) 2010-05-20 2015-07-07 Kandou Labs, S.A. Methods and systems for selection of unions of vector signaling codes for power and pin efficient chip-to-chip communication
US9246713B2 (en) 2010-05-20 2016-01-26 Kandou Labs, S.A. Vector signaling with reduced receiver complexity
US9450744B2 (en) 2010-05-20 2016-09-20 Kandou Lab, S.A. Control loop management and vector signaling code communications links
US9288082B1 (en) 2010-05-20 2016-03-15 Kandou Labs, S.A. Circuits for efficient detection of vector signaling codes for chip-to-chip communication using sums of differences
WO2011151469A1 (fr) 2010-06-04 2011-12-08 Ecole Polytechnique Federale De Lausanne Codage à contrôle d'erreur pour une signalisation vectorielle différentielle orthogonale
US9275720B2 (en) 2010-12-30 2016-03-01 Kandou Labs, S.A. Differential vector storage for dynamic random access memory
US9268683B1 (en) 2012-05-14 2016-02-23 Kandou Labs, S.A. Storage method and apparatus for random access memory using codeword storage
EP2926260B1 (fr) 2013-01-17 2019-04-03 Kandou Labs S.A. Procédés et systèmes de communication entre puces avec réduction de parasite de commutation simultané
CN105122758B (zh) 2013-02-11 2018-07-10 康杜实验室公司 高带宽芯片间通信接口方法和系统
EP2979388B1 (fr) 2013-04-16 2020-02-12 Kandou Labs, S.A. Procédés et systèmes destinés à une interface de communication à large bande passante
EP2997704B1 (fr) 2013-06-25 2020-12-16 Kandou Labs S.A. Signalisation vectorielle à complexité de récepteur réduite
US9106465B2 (en) * 2013-11-22 2015-08-11 Kandou Labs, S.A. Multiwire linear equalizer for vector signaling code receiver
US9806761B1 (en) 2014-01-31 2017-10-31 Kandou Labs, S.A. Methods and systems for reduction of nearest-neighbor crosstalk
CN105993151B (zh) 2014-02-02 2019-06-21 康杜实验室公司 低isi比低功率芯片间通信方法和装置
WO2015131203A1 (fr) 2014-02-28 2015-09-03 Kandou Lab, S.A. Codes de signalisation de vecteur à horloge incorporée
US9509437B2 (en) 2014-05-13 2016-11-29 Kandou Labs, S.A. Vector signaling code with improved noise margin
US9148087B1 (en) 2014-05-16 2015-09-29 Kandou Labs, S.A. Symmetric is linear equalization circuit with increased gain
US9112550B1 (en) 2014-06-25 2015-08-18 Kandou Labs, SA Multilevel driver for high speed chip-to-chip communications
CN105262467B (zh) * 2014-07-10 2018-05-04 恩智浦有限公司 体偏置的电路与方法
CN106797352B (zh) 2014-07-10 2020-04-07 康杜实验室公司 高信噪特性向量信令码
US9432082B2 (en) 2014-07-17 2016-08-30 Kandou Labs, S.A. Bus reversable orthogonal differential vector signaling codes
KR101943048B1 (ko) 2014-07-21 2019-01-28 칸도우 랩스 에스에이 다분기 데이터 전송
CN106576087B (zh) 2014-08-01 2019-04-12 康杜实验室公司 带内嵌时钟的正交差分向量信令码
US9674014B2 (en) 2014-10-22 2017-06-06 Kandou Labs, S.A. Method and apparatus for high speed chip-to-chip communications
US9832046B2 (en) 2015-06-26 2017-11-28 Kandou Labs, S.A. High speed communications system
US9557760B1 (en) 2015-10-28 2017-01-31 Kandou Labs, S.A. Enhanced phase interpolation circuit
US9577815B1 (en) 2015-10-29 2017-02-21 Kandou Labs, S.A. Clock data alignment system for vector signaling code communications link
US10055372B2 (en) 2015-11-25 2018-08-21 Kandou Labs, S.A. Orthogonal differential vector signaling codes with embedded clock
WO2017132292A1 (fr) 2016-01-25 2017-08-03 Kandou Labs, S.A. Circuit d'attaque à échantillonnage de tension à gain haute fréquence amélioré
US10003454B2 (en) 2016-04-22 2018-06-19 Kandou Labs, S.A. Sampler with low input kickback
CN109314518B (zh) 2016-04-22 2022-07-29 康杜实验室公司 高性能锁相环
EP3449379B1 (fr) 2016-04-28 2021-10-06 Kandou Labs S.A. Codes de signalisation vectorielle pour groupes de fils à routage dense
US10153591B2 (en) 2016-04-28 2018-12-11 Kandou Labs, S.A. Skew-resistant multi-wire channel
CN109417521B (zh) 2016-04-28 2022-03-18 康杜实验室公司 低功率多电平驱动器
BE1024217B1 (nl) * 2016-05-17 2017-12-19 Icsense Nv Analoog schakelcircuit
US9906358B1 (en) 2016-08-31 2018-02-27 Kandou Labs, S.A. Lock detector for phase lock loop
US10411922B2 (en) 2016-09-16 2019-09-10 Kandou Labs, S.A. Data-driven phase detector element for phase locked loops
US10200188B2 (en) 2016-10-21 2019-02-05 Kandou Labs, S.A. Quadrature and duty cycle error correction in matrix phase lock loop
US10372665B2 (en) 2016-10-24 2019-08-06 Kandou Labs, S.A. Multiphase data receiver with distributed DFE
US10200218B2 (en) 2016-10-24 2019-02-05 Kandou Labs, S.A. Multi-stage sampler with increased gain
US10116468B1 (en) 2017-06-28 2018-10-30 Kandou Labs, S.A. Low power chip-to-chip bidirectional communications
US10686583B2 (en) 2017-07-04 2020-06-16 Kandou Labs, S.A. Method for measuring and correcting multi-wire skew
US10203226B1 (en) 2017-08-11 2019-02-12 Kandou Labs, S.A. Phase interpolation circuit
US10496583B2 (en) 2017-09-07 2019-12-03 Kandou Labs, S.A. Low power multilevel driver for generating wire signals according to summations of a plurality of weighted analog signal components having wire-specific sub-channel weights
US10326623B1 (en) 2017-12-08 2019-06-18 Kandou Labs, S.A. Methods and systems for providing multi-stage distributed decision feedback equalization
US10554380B2 (en) 2018-01-26 2020-02-04 Kandou Labs, S.A. Dynamically weighted exclusive or gate having weighted output segments for phase detection and phase interpolation
US10566972B1 (en) * 2019-04-02 2020-02-18 Apple Inc. Analog switches immune to power sequence

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3215859A (en) 1962-11-20 1965-11-02 Radiation Inc Field effect transistor gate
JPS595898Y2 (ja) * 1981-02-26 1984-02-22 松下電器産業株式会社 アナログスイツチ
SU1274147A1 (ru) * 1985-01-07 1986-11-30 Новосибирский электротехнический институт связи им.Н.Д.Псурцева Электронный ключ
JPH02172319A (ja) 1988-12-26 1990-07-03 Kokusai Electric Co Ltd アナログスイッチ回路
SU1704279A1 (ru) * 1989-10-03 1992-01-07 Запорожский индустриальный институт Электронный переключатель
US5783952A (en) * 1996-09-16 1998-07-21 Atmel Corporation Clock feedthrough reduction system for switched current memory cells
JP2000353944A (ja) * 1999-06-10 2000-12-19 Denso Corp スイッチ回路および多値電圧出力回路
US6522187B1 (en) * 2001-03-12 2003-02-18 Linear Technology Corporation CMOS switch with linearized gate capacitance
JP2004054629A (ja) * 2002-07-19 2004-02-19 Canon Inc 定電圧源
US7292088B2 (en) * 2004-05-19 2007-11-06 International Rectifier Corporation Gate driver output stage with bias circuit for high and wide operating voltage range
JP2005348206A (ja) * 2004-06-04 2005-12-15 Matsushita Electric Ind Co Ltd 高周波スイッチ回路及びそれを用いた半導体装置
US7427887B2 (en) * 2005-05-13 2008-09-23 Analog Devices, Inc. Open drain driver, and a switch comprising the open drain driver
JP4987447B2 (ja) * 2006-11-30 2012-07-25 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路
JP4938439B2 (ja) * 2006-12-27 2012-05-23 オンセミコンダクター・トレーディング・リミテッド スイッチング制御回路
CN101399546B (zh) * 2007-09-26 2010-11-10 中芯国际集成电路制造(上海)有限公司 数模转换单元和电路
JP2009182572A (ja) * 2008-01-30 2009-08-13 Toshiba Corp 電源回路
JP2011199591A (ja) * 2010-03-19 2011-10-06 Roland Corp 電子スイッチ装置
JP2012054694A (ja) * 2010-08-31 2012-03-15 On Semiconductor Trading Ltd 双方向スイッチおよびそれを用いたスイッチ回路
KR101215830B1 (ko) * 2011-03-24 2012-12-27 주식회사 실리콘웍스 Ｌｄｍｏｓ 소자를 이용한 스위치 회로

Also Published As

Publication number Publication date
CN104769844B (zh) 2018-05-29
US20140132331A1 (en) 2014-05-15
WO2014078677A1 (fr) 2014-05-22
JP6529435B2 (ja) 2019-06-12
JP2016501477A (ja) 2016-01-18
CN104769844A (zh) 2015-07-08
US8975948B2 (en) 2015-03-10

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