WO2014064822A1 - Module semi-conducteur de puissance et dispositif de conversion de puissance l'utilisant - Google Patents

Module semi-conducteur de puissance et dispositif de conversion de puissance l'utilisant Download PDF

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Publication number
WO2014064822A1
WO2014064822A1 PCT/JP2012/077674 JP2012077674W WO2014064822A1 WO 2014064822 A1 WO2014064822 A1 WO 2014064822A1 JP 2012077674 W JP2012077674 W JP 2012077674W WO 2014064822 A1 WO2014064822 A1 WO 2014064822A1
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Prior art keywords
power semiconductor
temperature
power
drive circuit
substrate
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PCT/JP2012/077674
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English (en)
Japanese (ja)
Inventor
敏 井堀
佐々木　康
谷　昌吾
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株式会社日立産機システム
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Priority to JP2014543093A priority Critical patent/JPWO2014064822A1/ja
Priority to PCT/JP2012/077674 priority patent/WO2014064822A1/fr
Publication of WO2014064822A1 publication Critical patent/WO2014064822A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a power semiconductor module and a power converter equipped with the same.
  • Power converters are widely used as speed control devices for motors in industry and home appliances. Since the power semiconductor in the power converter generates a large loss, a structure for cooling the heat generated by this loss is employed.
  • a cooling fin and a cooling fan are provided, heat from the power semiconductor as a heating element is conducted to the cooling fin, air is sent to the cooling fin by the cooling fan, heat exchange is performed, and air cooling is performed. Generally, heat is dissipated by the method.
  • the voltage and frequency are controlled variably by switching driving power semiconductor elements (power semiconductor elements) such as IGBTs, but peripheral circuits such as protection circuits are assembled in the same package for miniaturization.
  • driving power semiconductor elements power semiconductor elements
  • peripheral circuits such as protection circuits are assembled in the same package for miniaturization.
  • IPM integer power modules
  • an operating limit temperature is set for these power semiconductor elements. If the power semiconductor elements are used while still generating heat even if the operating limit temperature of the power semiconductor is exceeded, the power semiconductor elements may be destroyed. Therefore, a semiconductor module in which a detection element for detecting the temperature of the power semiconductor element is incorporated in the same package so that the power semiconductor element can be used at a temperature lower than the operation limit temperature and can be used with high reliability is generally used. Further, as a temperature detection element, a chip incorporating a thermistor or a temperature detection diode is generally used.
  • Patent Document 1 discloses a “temperature measurement circuit for a power semiconductor device that detects the temperature of a power semiconductor device in which a power semiconductor element and a temperature detection diode are provided on a silicon chip, and the power element is an n-channel type”.
  • the potential of the anode and the cathode of the temperature detection diode is maintained at a negative potential from the emitter or source potential of the power semiconductor element, the forward current flowing between the anode and the cathode is detected. Therefore, the power semiconductor element and the temperature detecting diode are separated from each other by detecting the temperature of the silicon chip with a low-cost configuration based on the junction separation instead of the high-cost configuration through the insulating film. ”
  • Claims 1 and 2) are disclosed.
  • Patent Document 2 discloses that “a second semiconductor element having a first semiconductor element having a temperature detecting means and a current detecting means for detecting a current flowing in the semiconductor element and connected in parallel to the first semiconductor element.
  • the first and second semiconductor elements are arranged in a zigzag manner on the same heat sink, and the temperature information obtained from the temperature detection means of the first semiconductor element is used.
  • Overheat protection circuit for overheating protection of first and second semiconductor elements, and overcurrent protection for overcurrent protection of first and second semiconductor elements based on current information obtained from current detection means of the second semiconductor element Circuit, a current sensor that detects the output current of the semiconductor power converter circuit, and a current sensor detection value during operation of the overcurrent protection circuit or overheat protection circuit is less than a preset value.
  • Patent Document 3 states that “an inverter device includes an inverter basic unit in which at least a part of a DC / AC converter and a part of a controller are configured by a power module, and an input / output interface unit including a signal connection terminal.
  • the inverter basic unit includes a first substrate on which a plurality of power semiconductors are mounted, a microcomputer, and an I / O block.
  • a power module comprising a second board on which a communication circuit is mounted and a third board on which a capacitor is mounted, and of which the first board and the second board are mounted in one package.
  • JP 2010-199490 A Japanese Patent No. 4177392 Japanese Patent No. 3333210
  • Patent Document 1 in paragraph [0041], when the temperature of a power semiconductor device in which a power semiconductor element and a temperature detection diode are provided on a silicon chip is detected, the anode and cathode potentials of the temperature detection diode are The power semiconductor element and temperature detection are made to detect the forward current that flows between the anode and the cathode while keeping the negative potential from the terminal potential on the low potential side among the multiple terminals of the power semiconductor element. It is disclosed that the temperature of a silicon chip can be detected with high accuracy by using a low-cost configuration based on junction isolation instead of a high-cost configuration using an insulating film for the isolation of a diode for use.
  • step S4 determines whether or not the calculated silicon chip temperature Tc exceeds the second predetermined temperature T2, and when Tc ⁇ T2, the process proceeds to step S5.
  • step S5 the protection signal Sp1 for limiting the switching frequency of the gate signal supplied to the gate of the current IGBT 5 or 6 to 1/2 is output to the gate driver IC 7 or 8, and then the timer interrupt process is terminated.
  • step S4 the process proceeds to step S6, the protection signal Sp2 for stopping the gate signal supplied to the IGBT 5 or 6 is output to the gate driver IC 7 or 8, and the timer interrupt process is terminated.
  • a point of returning to a predetermined main program is disclosed.
  • the first predetermined temperature T1 and the second predetermined temperature T2 are not configurations that can be changed by the user, but are temperatures that are determined in advance by the power semiconductor manufacturer, and can be arbitrarily changed by the user. Absent.
  • the overheat protection circuit 5 includes a constant current source 5a for causing the temperature detection diode 3 to generate a forward voltage, a forward voltage of the temperature detection diode 3, Overheat determination comparison circuit 5b that compares a predetermined reference voltage value, logic inversion circuit 5c that turns off IGBT1 and IGBT2 when IGBT1 is determined to be in an overheat state, and for transmitting the overheat state to host CPU 7 It is disclosed that the buffer 5d is configured.
  • the predetermined reference voltage value is not a configuration in which the user can change the setting, but is a temperature predetermined by the power semiconductor manufacturer.
  • Patent Document 1 and Patent Document 2 are disclosed only about the power semiconductor module manufactured by the logic of the making side, there is no disclosure about the point of opening the detection temperature setting of the power semiconductor chip to the user, and it is used There is no disclosure regarding a power semiconductor module manufactured from the standpoint of the user on the side.
  • Patent Document 3 discloses a first substrate 1 on which a power semiconductor chip is mounted, a second substrate 2 on which a core microcomputer 21 is mounted, a terminal block 31, and an excessive current that flows when power is turned on.
  • An inrush control resistor 33, a third substrate 3 on which a smoothing capacitor 32 is mounted, and an inverter control device including an I / O block unit IOB on which a personal computer 9 is mounted are disclosed.
  • the inverter basic unit COR is composed of the first substrate 1, the second substrate 2, and the third substrate 3, and the power module ISPM is configured with the first substrate 1 and the second substrate 2. It is described that the I / O block unit IOB is connected to the second substrate in the module ISPM.
  • Patent Document 3 discloses that the effect of heat conduction from the first substrate 1 on which a power semiconductor chip having a very large calorific value is mounted is reduced, and the power semiconductor chip is applied to the core microcomputer 21 and the storage element 27.
  • a configuration of a two-story structure in which the second substrate 2 is mounted on the first substrate 1 so as to ensure a spatial distance is disclosed.
  • the two-story structure configured to ensure a sufficient spatial distance must naturally be made at the expense of the height of the power module ISPM. It is obvious that the problem of not being able to occur occurs. As a result, when the power module ISPM is mounted, this results in a natural result that the height dimension of the power conversion device also increases.
  • circuits corresponding to the power / sensor unit 110 and the control / input / output unit 120 described in the conventional example of FIG. 11 are mounted on the second substrate. It is disclosed. That is, as a power source / sensor relationship, a power supply circuit 22 that generates various DC voltages, a current detection unit 23 of the main circuit, a voltage detection unit 24, a temperature detection unit 25, a drive circuit that supplies drive signals to the inverter 13 and the thyristor 12. 26 is implemented. On the other hand, the core microcomputer 21, the storage element 27, and the communication circuit 28 are mounted as a control relationship. Further, CN1, CN2, and CN3 are mounted on the second substrate as connectors.
  • a communication circuit 28 is connected to the connector CN1, and signal transmission is performed via the connector CN1, 7, 8 or 9, which are various I / O block units, and the transmission signal TX and the reception signal RX. It is said.
  • the power supply PW is supplied from the power supply circuit 22 to these I / O block units.
  • the minimum I / O circuit 6 is also a kind of I / O block section in a broad sense, and signals are exchanged with the core microcomputer 21 via the connector CN3 without passing through the communication circuit 28. One of these signals is an input signal 6S1, and the other is an output signal 6S2. Similarly, the power supply 6S3 from the power supply circuit 22 is supplied.
  • the core microcomputer 21 includes, in hardware, a flash memory 21A, a RAM 21B, a timer 21C, and the like, which are ROMs that store programs.
  • the flash memory is selected by the power supply (between VPP and GND) supplied through the connector CN2 and the signals RES and MD, and the program data is serially transmitted from the personal computer 9 or the like through the connector CN1 and the communication circuit 28. It is disclosed that the data is transferred and written, so-called downloaded.
  • a large number of pin terminals for solder connection are required to connect the first substrate 1, the second substrate 2, and the third substrate 3, and a connector is provided on the second substrate 2.
  • CN1, CN2, and CN3 are mounted, and the first substrate 1 and the second substrate 2 constituting the power module ISPM are connected to the first substrate 1 by soldering.
  • a large number of pin terminals are required, and further, three connectors are also required for the second substrate 2, which becomes a large obstacle to miniaturization of the power module ISPM. .
  • a switching element, a drive circuit that drives the switching element, and a microcomputer that controls the drive circuit are arranged on the same plane, and a metal is arranged between the switching element, the drive circuit, and the microcomputer. It is the power converter device characterized by being.
  • the present invention it is possible to provide a power semiconductor module that is less affected by electromagnetic noise or temperature or a power conversion device equipped with the power semiconductor module.
  • FIG. 6 is a characteristic diagram showing a correlation between a forward voltage drop and a temperature of a temperature detection diode. 6 is an example of a forward voltage drop of a temperature detection diode stored in advance in a nonvolatile memory and temperature data corresponding to the voltage.
  • positioning inside the semiconductor module of the power converter device which concerns on this invention. It is another example of component arrangement
  • FIG. 1 is an example of a one-arm configuration diagram inside an inverter of a power converter according to the present invention.
  • the main element corresponding to each arm of the three-phase output terminal U-phase, V-phase, and W-phase is composed of UP as the upper arm and UN as the lower arm.
  • the temperature detection diode of the upper arm power semiconductor element chip provided on the U-phase semiconductor power semiconductor element chip is 9UP, and the temperature detection diode of the lower arm power semiconductor element chip is 9UN.
  • the diodes are supplied with constant currents from the constant current circuits 18UP and 18UN of the drive circuit 16, respectively, and detect changes in the forward voltage drop due to temperature changes.
  • the detected voltage values VF-UP and VF-UN which are the voltages at both ends of the diode detected in the drive circuit 16, are transmitted to the A / D converter of the microcomputer MCU2, and the power semiconductor element chip corresponding to the value is transmitted.
  • the temperature can be calculated.
  • the present invention is characterized in that the temperature of the power semiconductor element chip is detected by utilizing the characteristic that the forward drop voltage changes. At this time, a PWM signal is transmitted from the microcomputer MCU2 to the drive circuit 16.
  • FIG. 5 is a diagram showing a correlation between the forward voltage drop of the temperature detection diode and the temperature.
  • the present invention does not detract from the intention of the present invention, and the same effect as in the case of using the characteristic formula of FIG. 5 can be obtained.
  • FIG. 6 shows an example of nonvolatile memory contents related to correlation data between the forward voltage drop of the temperature detecting diode and the temperature of the power semiconductor element chip.
  • the estimated temperature value can be calculated by associating the detected voltage value of the temperature detecting diode obtained from the detected voltage value VF-UP or VF-UN of the diode with the memory of FIG.
  • the memory shown in FIG. 6 is actually stored in binary, it is only described in decimal for easy understanding, and does not detract from the intent of the present invention.
  • each numerical value described is an example, and is not limited to this numerical value.
  • FIG. 2 is an example of a detailed arm configuration diagram inside the inverter of the power converter according to the present invention.
  • a constant current is supplied from the drive circuit 16 to each temperature detection diode 9UP, 9UN, 9VP, 9VN, 9WP, and 9WN to detect the temperature of all arms.
  • the forward voltage drop VF of the operating diode is transmitted to the A / D converter of the microcomputer MCU2. Based on the forward voltage drop VF of the temperature detection diodes of all the arms, the temperature of the power semiconductor element chip can be calculated.
  • FIG. 3 is another embodiment relating to the arm configuration diagram of the composite module of the power conversion device according to the present invention.
  • An all-power semiconductor element in which the forward converter part 1, the inrush suppression circuit 12 and the temperature detecting diode of the reverse converter part 3 in the composite module 13 constituting the power semiconductor are mounted is disclosed.
  • Each of temperature detection diodes 9RP, 9RN, 9SP, 9SN, 9TP, 9TN, 9TH, 9UP, 9UN, 9VP, 9VN, 9WP, 9WN configured on a semiconductor chip composed of a plurality of power semiconductor elements
  • a current is supplied from a constant current circuit (not shown) mounted in the drive circuit 10, and each detected voltage value VF of the diode is transmitted to the A / D converter of the microcomputer MCU2, and the transmitted diode
  • the temperature of the power semiconductor element chip corresponding to each detected voltage value VF can be calculated.
  • FIG. 4 is another embodiment of the arm configuration diagram in the forward converter unit and the reverse converter unit of the power converter according to the present invention.
  • Example 4 differs in that the inrush suppression circuit 12, the regenerative braking circuit 26, and the reverse converter unit 3 of FIG. 3 are separated from the forward converter unit 1 and provided in different power semiconductor modules. That is, the configuration corresponding to the forward converter unit 1 of FIG. 3 is provided in the power semiconductor module 21, and the inrush suppression circuit 12, the regenerative braking circuit 26, and the reverse converter unit 3 correspond to the forward converter unit 1.
  • the power semiconductor module 20 is provided separately from the power semiconductor module 21. Accordingly, the temperature detection diodes are also temperature detection diodes 9RP, 9RN, 9SP, 9SN, 9TP, and 9TN configured on the semiconductor chip, and temperature detection diodes 9TH, 9BR configured on the semiconductor chip. 9UP, 9UN, 9VP, 9VN, 9WP, and 9WN are separately configured.
  • a constant current circuit (not shown) mounted in the drive circuit 27 is used. A current is supplied, and the detected voltage value VF of each of the diodes is transmitted to the A / D converter of the microcomputer MCU2, and the temperature of the power semiconductor element chip corresponding to the value can be calculated.
  • the temperature detection diodes 9TH, 9BR, 9UP, 9UN, 9VP, 9VN, 9WP, and 9WN configured on the semiconductor chip in the power semiconductor module 20 are respectively mounted in the drive circuit 10.
  • a current is supplied from a non-constant current circuit, and the detected voltage value VF of each of the diodes is transmitted to the A / D converter of the microcomputer, and the temperature of the power semiconductor element chip corresponding to the value can be calculated.
  • the temperature characteristics of the forward voltage drop VF of the temperature detection diodes 9RP, 9RN, 9SP, 9SN, 9TP, 9TN and 9TH, 9BR, 9UP, 9UN, 9VP, 9VN, 9WP, 9WN are the power semiconductor module 20 Depending on whether the power semiconductor module 21 is used, ones having different characteristics or the same characteristics may be selected.
  • the characteristics of the power semiconductor element chips of the respective power semiconductor modules are different, it is possible to calculate with higher accuracy by calculating the temperature of the power semiconductor element chip using different characteristic equations. If the characteristics do not differ greatly, it is possible to use less memory if the temperature of the power semiconductor element chip is calculated using a common characteristic equation.
  • FIG. 7 is an example of component arrangement inside the semiconductor module of the power conversion device according to the present invention.
  • FIG. 7A shows an example in which main switching elements such as UP, UN, VP, VN, WP, and WN, a drive circuit 16, a microcomputer MCU2, and a connector 11 are mounted on an insulating substrate 22 constituting the power semiconductor 13. is there.
  • the microcomputer MCU2 transmits a PWM signal to the drive circuit 16 by a transmission signal from the host microcomputer MCU1 connected by the connector 11, and each UP, UN, VP is transmitted from the drive circuit 16 by a copper foil pattern or an aluminum wire (not shown). , VN, WP, WN and other main switching elements are driven.
  • a main switching element that is relatively resistant to noise and temperature is arranged on the left side, and a drive circuit 16 and a microcomputer MCU2 that are sensitive to noise and temperature are arranged on the right side.
  • the entire surface of the insulating substrate 22 is composed of a single insulating substrate having high thermal conductivity (for example, alumina: Al 2 O 3, silicon nitride: Si 3 N 4, aluminum nitride: AlN, etc.).
  • FIG. 7B is characterized in that a metal plate 19 is provided between the main switching element mounted on the left side of the insulating substrate 22 and the drive circuit 16 and the microcomputer MCU2 mounted on the right side. This is provided to prevent malfunction of the drive circuit 16 and the microcomputer MCU2 from noise caused by a steep voltage change (dV / dt) from each main switching element.
  • the main switching element and the drive circuit 16 And microcomputer MCU2 are provided for the purpose of shielding electromagnetic noise.
  • each main switching element is provided by providing a metal plate 19 therebetween. Can be shielded from electromagnetic noise and temperature.
  • the metal plate 19 provided between the main switching element and the drive circuit 16 and the microcomputer MCU2 is bent so as to cover the drive circuit 16 and the microcomputer MCU2 with respect to the surface of the insulating substrate 22. It has the characteristic in the point comprised. This is bent for the purpose of further enhancing the shielding effect by the metal plate 19a provided to shield the drive circuit 16 and the microcomputer MCU2 from electromagnetic noise.
  • the bent metal plate 19a may have a structure that covers all of the drive circuit 16 and the microcomputer MCU2, or a structure that covers only a part thereof.
  • the connector 11 may be covered so that a cutout portion is provided only at a portion of the metal plate 19a located on the upper portion of the connector 11, and the connector is protruded from the cutout portion.
  • the same effect of shielding the drive circuit 16 and the microcomputer MCU2 from electromagnetic noise can be obtained.
  • the metal plate is bent as shown in FIG. 7C, it can be said that this is an effective method in that the shielding effect can be further improved as compared with FIG. 7B.
  • the material of the metal plates 19 and 19a should just be comprised, for example with metals, such as copper, aluminum, and iron.
  • FIG. 7D is a cross-sectional view taken along line AB in FIG. 7C, and it can be seen that the bent metal plate 19a covers the drive circuit 16 and the microcomputer MCU2.
  • FIG. 10 is a main circuit configuration diagram of the power conversion device according to the present invention.
  • the solder connection of the metal plate 19b shows a state where it is not connected to any circuit of the insulating substrate 22, but in order to increase the effect from electromagnetic noise shielding and temperature shielding from the main switching element, FIG.
  • the effect can be obtained by connecting to the reference potential N of the electrolytic capacitor 2 in the main circuit shown in FIG.
  • N1 which is the common potential of the main switching element shown in FIG.
  • FIG. 8 shows another example of the component arrangement inside the semiconductor module of the power conversion device according to the present invention.
  • a board 22 having a higher thermal conductivity than that of a normal glass epoxy board 22a is used on the left side on which the main switching element is mounted, and a drive circuit 16 and a microcomputer MCU2 having a small amount of heat are mounted.
  • a normal glass epoxy substrate 22a for example, FR-4 or FR-5
  • the substrate is composed of a single insulating substrate formed by integrally molding these substrates.
  • the thermal conductivity of 22a (for example, FR-4 and FR-5) is extremely low. For this reason, the heat of the substrate on which the main switching element having a very large amount of heat generation is mounted is not conducted to the glass epoxy substrate side on which the drive circuit 16 or the microcomputer MCU2 having low thermal conductivity is mounted, and most of the heat is from the substrate 22.
  • the drive circuit 16 and the microcomputer MCU2 can minimize the influence of heat generated by the main switching element having a very large calorific value, and can avoid the concern of temperature rise due to heat conduction.
  • the solder connection of the metal plate 19c shows a state where it is not connected to any circuit of the insulating substrate 22, but in order to increase the effect from electromagnetic noise shielding and temperature shielding from the main switching element, FIG.
  • the effect can be obtained by connecting to the reference potential N of the electrolytic capacitor 2 in the main circuit shown in FIG.
  • N1 which is the common potential of the main switching element shown in FIG.
  • the metal plate 19c is provided at four locations on the metal plate 19a. However, it is the same whether two locations on the diagonal, two locations on either the left or right side, and one location on either the left or right side. The effect is obtained. Further, the present embodiment does not limit the number of described metal plates 19c.
  • the substrate 22 may be composed of an epoxy base material containing a metal filler.
  • FIG. 9 is another example of component arrangement inside the semiconductor module of the power conversion device according to the present invention.
  • the main switching element composed of UP, UN, VP, VN, WP, and WN generates a very large amount of heat, and the drive circuit 16 and the microcomputer MCU2 have a small amount of heat.
  • the substrate 22 having high thermal conductivity is used on the left side on which the main switching element is mounted, and the right side on which the drive circuit 16 and the microcomputer MCU2 with a small amount of heat generation are mounted is normally used.
  • the glass epoxy substrate 22b (for example, FR-4 or FR-5) is an insulating substrate formed by separating these substrates. Thereby, it is possible to reduce the influence of heat from the insulating substrate on which the main switching element that generates a very large amount of heat is mounted.
  • the substrate 22 having a high thermal conductivity and the glass epoxy substrate 22b having a low thermal conductivity are arranged apart by a distance d, but the distance d may be zero.
  • an aluminum wire 25 is ultrasonically connected to a pad pattern 24 provided on each insulating substrate.
  • FIG. 9B is characterized in that a metal plate 19 is provided for the purpose of shielding from electromagnetic noise as disclosed in FIG. 7B.
  • the metal plate 19a is provided to shield from electromagnetic noise, but the metal plate is bent for the purpose of further enhancing the shielding effect.
  • a feature is that the drive circuit 16 and the microcomputer MCU2 are covered.
  • the bent metal plate may not be a structure that covers all of the drive circuit 16 and the microcomputer MCU2, but may be a structure that covers a part thereof.
  • the material of the metal plates 19 and 19a should just be comprised with metals, such as copper, aluminum, and iron.
  • FIG. 9D is a cross-sectional view taken along line CD in FIG. 9C, and the structure of the bent metal plate 19a can be read.
  • the solder connection of the metal plate 19d shows a state in which it is not connected to any circuit of the insulating substrate 22, but in order to increase the effect from electromagnetic noise shielding and temperature shielding from the main switching element, FIG.
  • the effect can be obtained by connecting to the reference potential N of the electrolytic capacitor 2 in the main circuit shown in FIG.
  • N1 is the common potential of the main switching element shown in FIG.
  • FIG. 10 is a main circuit configuration diagram of the power conversion device 17 according to the present embodiment.
  • 1 is a forward converter that converts AC power into DC power
  • 2 is a smoothing capacitor
  • 3 is an inverse converter that converts DC power into AC power of an arbitrary frequency
  • 4 is an AC motor.
  • Reference numeral 6 denotes a cooling fan for cooling the power semiconductor module 13 including the forward converter 1, the inrush suppression circuit 12, the inverse converter 3, and the like.
  • RB is a regenerative braking resistor connected in series to the regenerative braking circuit 26.
  • Reference numeral 7 denotes a digital operation panel capable of setting, changing, and displaying an abnormality in various control data for the power conversion device 17.
  • the control circuit 5 is equipped with a microcomputer (control arithmetic unit), and the MCU 1, which is a microcomputer, performs an operation based on information from storage data in a storage unit in which various control data are stored, and performs digital operation. In accordance with various control data input from the panel 7, it is configured to perform necessary control processing for the entire apparatus.
  • the digital operation panel 7 is configured to display an abnormality or warning when an abnormality occurs.
  • the digital operation panel 7 is provided with a display unit capable of displaying an abnormality. When an abnormality is detected in the power conversion device, the display is displayed on the display unit.
  • the type of the operation panel 7 of the present embodiment is not particularly limited.
  • the operation panel 7 is configured as a digital operation panel so that the operation can be performed while viewing the display on the display unit in consideration of the operability of the apparatus user.
  • the display unit is not necessarily configured integrally with the operation panel 7, but it is desirable that the display unit be configured integrally so that the operator of the digital operation panel 7 can operate while viewing the display.
  • Various control data of the power converter input from the operation panel 7 is stored in a storage unit (not shown).
  • Reference numeral 8 denotes a power supply circuit, and a switching regulator circuit (DC / DC converter) is mounted in the circuit 8 to generate each DC voltage necessary for the operation of the power converter and supply these to each component.
  • Reference numeral 10 denotes a drive circuit for driving the inverse converter.
  • a drive circuit 16 (not shown) for driving the main switching element and a microcomputer MCU2 are incorporated in the drive circuit 10, and the microcomputer MCU2 converts the inverter circuit 16 into an inverse converter based on a command from the control circuit 5.
  • 3 transmits and receives (communications) signals and the like for driving the switching elements 3.
  • the 11 is a connector provided in the power semiconductor module 13, which is connected to the power supply circuit 8 and transmits / receives various input / output signals to / from the control circuit 5.
  • Reference numeral 9 denotes a temperature detecting diode formed on the semiconductor power semiconductor element chip.
  • a temperature detection diode is formed on a silicon chip constituting the power semiconductor element. Of course, it is not limited to silicon chips.
  • a constant current is supplied to the temperature detection diode 9 from a drive circuit 16 (not shown), and the temperature of the power semiconductor element chip is detected by utilizing the characteristic that the forward voltage drop due to temperature change changes. Using this temperature characteristic, the voltage across the diode is detected in the drive circuit 16.
  • the first temperature set value and the second temperature set value which are detected temperatures of the power semiconductor element chip, can be individually set from the digital operation panel 7.
  • W-OH is an output signal indicating that the warning notice temperature has been reached
  • A-OH is an output signal indicating that the warning temperature has been reached.
  • the output of the power converter is not shut off (warning notice), and the second temperature set value is reached and the warning temperature signal is reached.
  • A-OH the output of the power converter is cut off. That is, whether the temperature reached the set temperature by opening it to the user by enabling the detection temperature of the power semiconductor element chip to a fixed temperature that cannot be changed on the user side, which is predetermined by the power semiconductor manufacturer. Whether or not the power conversion device can be fed back to the user and the overheat protection is activated and the power conversion device does not stop suddenly, the situation of the power conversion device can be accurately determined and the user can perform the next action.
  • the first temperature setting value of the power semiconductor element chip and the second temperature setting value of the power semiconductor element chip set by the user from the digital operation panel 7 and the diode forward drop voltage value for temperature detection in the power semiconductor element chip at that time An example is shown in the figure.
  • the forward voltage drop value of the temperature detection diode has been described up to 3 digits after the decimal point, it is not limited to 3 digits.
  • the first temperature set value is 80 ° C.
  • the detected value of the forward voltage drop VF of the temperature detecting diode becomes 1.769 (V) or more
  • the output of the power converter is not cut off
  • a symbol or character that can identify the temperature value and the warning warning temperature abnormality is displayed on the display unit on the operation panel 7, and an output signal W-OH indicating that the warning warning temperature has been reached is output from the control circuit 5.
  • the second temperature set value is 140 ° C.
  • the detected value of the forward voltage drop VF of the temperature detecting diode becomes 1.538 (V) or more
  • the output of the power converter is cut off, A symbol or a character that can identify the temperature value and the warning temperature abnormality is displayed on the display unit on the operation panel 7, and an output signal A-OH indicating that the warning temperature has been reached is output from the control circuit 5.
  • the display contents it is sufficient that the meaning of the display can be distinguished by the user of the apparatus, and the display characters are not limited.
  • the operation limit temperature is defined for the power semiconductor element chip (for example, 150 ° C. for the Si chip)
  • the temperature setting range is limited in advance so that it cannot be set from the digital operation panel 7 above this temperature. By doing so, it is possible to avoid worrying about thermal destruction of the power semiconductor element chip.
  • the information that the user wants is how many times the power semiconductor element chip is operating, not the forward voltage drop VF value of the temperature detection diode. In this sense, the user can directly set the temperature of the power semiconductor element chip directly from the digital operation panel 7.
  • the first temperature setting value and the second temperature setting value of the temperature detection diode can be set individually, it is not absolutely necessary to limit the temperature setting values to two. Even a configuration in which n temperatures can be set does not detract from the intent of the present invention. Since the inverter which is a power converter is a well-known technique, detailed description is omitted.
  • FIG. 11 is an example of a component layout diagram of the power conversion device.
  • the forward converter 1, the inverse converter 3, and the drive circuit 10 are mounted in one module.
  • a cooling fin 14 that cools the power semiconductor 13 configured as a composite module and the cooling fan 6 are provided, and heat from the power semiconductor 13 that is a heating element is conducted to the cooling fin 14, and the cooling fan 6 air- It is the structure which is made to send heat exchange and to dissipate heat.
  • 8 is a power supply board
  • 15 is a resin mold case.
  • a temperature detection diode is mounted in the power semiconductor 13 configured as a composite module, and detects the temperature of the power semiconductor element. The temperature detection diode is configured to detect a forward voltage of the diode by utilizing a characteristic that a constant current is supplied and a forward voltage drop changes with temperature.
  • the present invention includes an insulating substrate in a case, several switching element chips, temperature detection diodes individually provided in the several switching element chips,
  • a power semiconductor comprising a constant current circuit for supplying a current to a temperature detection diode provided in the circuit, a drive circuit for driving several switching elements, and a microcomputer for controlling the drive circuit
  • a power semiconductor module in which a single switching element chip, a drive circuit, and a microcomputer for controlling the drive circuit are all mounted on an insulating substrate, a power conversion device having a first microcomputer provided in a control circuit inside the device, and a power semiconductor Communication of signal transmission between the second microcomputer provided inside the module and the first microcomputer provided in the control circuit inside the power converter And rows can be achieved by a power conversion apparatus capable of setting a temperature detection value of the temperature detecting diode from the first microcomputer or the second microcomputer.
  • SYMBOLS 1 ... Forward converter, 2 ... Smoothing electrolytic capacitor, 3 ... Reverse converter, 4 ... AC motor, 5 ... Control circuit, 6 ... Cooling fan, 7 ... Digital operation panel, 8 ... Power supply circuit, VPN ... DC voltage, UP, UN, VP, VN, WP, WN ... main switching element, 9RP, 9RN, 9SP, 9SN, 9TP, 9TN, 9TH, 9BR, 9UP, 9VP, 9WP, 9UN, 9VN, 9WN ... temperature detection diode, 10 , 27 ... Drive circuit, 11 ... Connector, 12 ... Inrush suppression circuit, 13 ... Power semiconductor, 14 ... Cooling fin, 15 ... Mold resin case 16, 16 ...

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inverter Devices (AREA)

Abstract

Selon l'invention, un dispositif de conversion de puissance est caractérisé en ce qu'un élément de commutation, un circuit d'attaque pour commander ledit élément de commutation, et un micro-ordinateur pour commander le circuit d'attaque sont disposés de manière coplanaire ; et en ce que du métal est introduit entre l'élément de commutation et le circuit d'attaque et le micro-ordinateur.
PCT/JP2012/077674 2012-10-26 2012-10-26 Module semi-conducteur de puissance et dispositif de conversion de puissance l'utilisant WO2014064822A1 (fr)

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JP2014543093A JPWO2014064822A1 (ja) 2012-10-26 2012-10-26 パワー半導体モジュールおよびこれを搭載した電力変換装置
PCT/JP2012/077674 WO2014064822A1 (fr) 2012-10-26 2012-10-26 Module semi-conducteur de puissance et dispositif de conversion de puissance l'utilisant

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JP2017079268A (ja) * 2015-10-20 2017-04-27 株式会社豊田自動織機 半導体装置
CN109510562A (zh) * 2019-01-02 2019-03-22 广东美的暖通设备有限公司 功率模块、空调器
JP2020515217A (ja) * 2017-02-03 2020-05-21 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ パワー半導体回路
US10930578B2 (en) 2017-03-30 2021-02-23 Autonetworks Technologies, Ltd. Circuit device
JP2021061273A (ja) * 2019-10-03 2021-04-15 株式会社デンソー 半導体モジュール
WO2023243306A1 (fr) * 2022-06-13 2023-12-21 ローム株式会社 Dispositif à semi-conducteur

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JP2009111288A (ja) * 2007-10-31 2009-05-21 Sanyo Electric Co Ltd 回路装置
JP2010011636A (ja) * 2008-06-27 2010-01-14 Hitachi Ltd 断線検出方法および電力変換装置
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JP2011199162A (ja) * 2010-03-23 2011-10-06 Sanken Electric Co Ltd 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017079268A (ja) * 2015-10-20 2017-04-27 株式会社豊田自動織機 半導体装置
JP2020515217A (ja) * 2017-02-03 2020-05-21 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ パワー半導体回路
US10930578B2 (en) 2017-03-30 2021-02-23 Autonetworks Technologies, Ltd. Circuit device
CN109510562A (zh) * 2019-01-02 2019-03-22 广东美的暖通设备有限公司 功率模块、空调器
JP2021061273A (ja) * 2019-10-03 2021-04-15 株式会社デンソー 半導体モジュール
JP7347091B2 (ja) 2019-10-03 2023-09-20 株式会社デンソー 半導体モジュール
WO2023243306A1 (fr) * 2022-06-13 2023-12-21 ローム株式会社 Dispositif à semi-conducteur

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