WO2014024797A1 - 転写装置及び基板処理装置 - Google Patents

転写装置及び基板処理装置 Download PDF

Info

Publication number
WO2014024797A1
WO2014024797A1 PCT/JP2013/071006 JP2013071006W WO2014024797A1 WO 2014024797 A1 WO2014024797 A1 WO 2014024797A1 JP 2013071006 W JP2013071006 W JP 2013071006W WO 2014024797 A1 WO2014024797 A1 WO 2014024797A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
porous
substrate
porous plate
transfer
Prior art date
Application number
PCT/JP2013/071006
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
鈴木　智也
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to JP2014529472A priority Critical patent/JP6287839B2/ja
Priority to CN201380040811.8A priority patent/CN104507685B/zh
Publication of WO2014024797A1 publication Critical patent/WO2014024797A1/ja

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F17/00—Printing apparatus or machines of special types or for particular purposes, not otherwise provided for
    • B41F17/08—Printing apparatus or machines of special types or for particular purposes, not otherwise provided for for printing on filamentary or elongated articles, or on articles with cylindrical surfaces
    • B41F17/10—Printing apparatus or machines of special types or for particular purposes, not otherwise provided for for printing on filamentary or elongated articles, or on articles with cylindrical surfaces on articles of indefinite length, e.g. wires, hoses, tubes, yarns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F17/00—Printing apparatus or machines of special types or for particular purposes, not otherwise provided for
    • B41F17/08—Printing apparatus or machines of special types or for particular purposes, not otherwise provided for for printing on filamentary or elongated articles, or on articles with cylindrical surfaces
    • B41F17/14—Printing apparatus or machines of special types or for particular purposes, not otherwise provided for for printing on filamentary or elongated articles, or on articles with cylindrical surfaces on articles of finite length
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to a transfer apparatus and a substrate processing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2012-173983 for which it applied on August 6, 2012, and uses the content here.
  • roller method As display elements constituting display devices such as display devices, for example, liquid crystal display elements, organic electroluminescence (organic EL) elements, electrophoretic elements used in electronic paper, and the like are known. As one of methods for manufacturing these elements, for example, a method called a roll-to-roll method (hereinafter simply referred to as “roll method”) is known (for example, refer to Patent Document 1).
  • a single sheet-like substrate wound around a substrate supply side roller is sent out, the substrate is transported while being wound up by a substrate recovery side roller, and the substrate is sent out after being sent out.
  • a pattern such as a display circuit or a driver circuit is sequentially formed on a substrate until it is formed.
  • a transfer method transfer method in which a pattern layer previously formed on a transfer plate is transferred to a substrate is known.
  • the transfer method when the pattern layer is transferred to the substrate, a part of the pattern may remain on the transfer plate.
  • An object of the present invention is to provide a transfer apparatus and a substrate processing apparatus that can suppress a pattern layer from remaining on a transfer plate during transfer.
  • a transfer apparatus includes a transfer plate having a porous plate formed of a porous material having a predetermined thickness and a pattern layer for transfer formed on one surface side of the porous plate. From the plate holding part to hold, the object to which the pattern layer of the transfer plate can be transferred, in close contact with or close to one side of the transfer plate, and the other side of the porous plate A fluid supply unit that supplies a fluid of a predetermined pressure toward one surface side.
  • a substrate processing apparatus includes a substrate transport unit that transports a substrate formed in a belt shape, and a plurality of substrate processing units that perform processing on the substrate transported by the substrate transport unit,
  • the transfer device is used as the substrate processing unit.
  • a device manufacturing method is a method of manufacturing an electronic device including a thin film transistor on a flexible substrate, and any two of an electrode layer, a semiconductor layer, and an insulating layer constituting the thin film transistor.
  • a fluid having a predetermined pressure is supplied from the other surface side of the porous plate toward the one surface side in a state where the surface side and the surface of the substrate are in close contact with each other;
  • FIG. 1 is a perspective view showing an overall configuration of a transfer apparatus according to a first embodiment of the present invention.
  • Sectional drawing which shows the structure of the porous sheet of this embodiment.
  • the perspective view which shows the structure of the gas ejection roller of this embodiment.
  • the perspective view which shows the internal structure of the gas ejection roller of this embodiment.
  • FIG. 6 is a partial cross-sectional view illustrating an example of a transfer operation according to the present embodiment.
  • FIG. 6 is a partial cross-sectional view illustrating an example of a transfer operation according to the present embodiment.
  • FIG. 6 is a partial cross-sectional view illustrating an example of a transfer operation according to the present embodiment.
  • Sectional drawing which shows the modification of the gas ejection roller in this embodiment.
  • Sectional drawing which shows the modification of the gas ejection roller in this embodiment.
  • Sectional drawing which shows the other structure of the porous sheet which concerns on this invention.
  • FIG. 1 is a perspective view illustrating a configuration of a transfer apparatus 100 according to the present embodiment.
  • the transfer apparatus 100 uses a porous sheet Ts as a transfer plate formed in an endless belt shape with flexibility and a porous material, and uses an outer peripheral surface Ta of the porous sheet Ts. Is a device for transferring the pattern layer formed on the film-like substrate P as an object to be transferred.
  • the transfer apparatus 100 includes a sheet holding unit (plate holding unit) 10 that holds the porous sheet Ts, a substrate holding unit (target holding unit) 20 that holds the substrate P, and the inner peripheral surface Tb side of the porous sheet Ts.
  • the gas supply part (fluid supply part) 30 which supplies gas toward the outer peripheral surface Ta side is provided.
  • a resin film such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate), a plastic sheet, an ultrathin bendable glass plate, a foil sheet obtained by rolling stainless steel into a foil, or a liquid
  • a flexible substrate such as paper or cloth processed so as to suppress the absorption of so-called flexible substrate.
  • a resin film or a plastic sheet is used as the substrate P, particularly paying attention to the low material cost.
  • FIG. 2 is a cross-sectional view showing the configuration of the porous sheet Ts.
  • the porous sheet Ts has a porous layer 11, a base metal layer 12 (covering portion), and a plating layer 13 (covering portion).
  • the porous layer 11 is formed using a porous material such as polyimide so as to have a film thickness of, for example, about 20 ⁇ m to 50 ⁇ m.
  • the porous layer 11 can allow gas to pass through.
  • the second surface 11b of the porous layer 11 corresponds to the inner peripheral surface Tb of the porous sheet Ts.
  • a porous polyimide membrane is disclosed, for example, in International Publication No. WO2010 / 038873.
  • the base metal layer 12 is formed on the first surface 11a of the porous layer 11 so as to have a predetermined pattern shape.
  • the pattern shape by the base metal layer 12 is complementary to the pattern layer to be transferred to the substrate P.
  • the pattern by the base metal layer 12 is formed, for example, by vapor deposition or the like, and closes a part of the first surface 11a of the porous layer 11.
  • the plating layer 13 is laminated on the base metal layer 12 by a plating method.
  • the surface 13a of the plating layer 13 corresponds to the outer peripheral surface (surface layer) Ta of the porous sheet Ts.
  • the plating layer 13 has the same pattern as the base metal layer 12.
  • the plated layer 13 is formed with a desired thickness by, for example, immersing a porous sheet Ts having a patterned base metal layer 12 in a plating solution for a predetermined time and performing electroless or electrolytic plating.
  • the first surface 11 a of the porous layer 11 is partially blocked by the pattern of the base metal layer 12 and the plating layer 13.
  • a pattern by the exposed portion 14 is formed in a region where the base metal layer 12 and the plating layer 13 are not provided.
  • the exposed portion 14 is filled with a material to be transferred that becomes a pattern layer to be transferred to the substrate P.
  • the porous sheet Ts functions in the same manner as the intaglio plate in printing because the porous sheet Ts is transferred by the exposed portion 14 that is recessed with respect to the base metal layer 12 and the plating layer 13.
  • the gas When passing a gas from the second surface 11b of the porous layer 11 to the first surface 11a, the gas is blocked by the base metal layer 12 and the plating layer 13 and is ejected from the exposed portion 14 of the first surface 11a.
  • This type of porous sheet (resin film, film, etc.) is made by cutting an aramid resin-based porous film with high heat resistance and dimensional stability, and a sintered porous molded body of ultrahigh molecular weight polyethylene powder.
  • An ultra-high molecular weight polyethylene porous film, a tetrafluoroethylene resin porous film excellent in properties such as liquid repellency, heat resistance, and chemical resistance can be used.
  • the surface 11a preferably has a pore size smaller than the minimum dimension of the fine pattern of the base metal layer 12 and good flatness.
  • porous sheet a surface fluorinated porous film in which the surface of the porous film made of a synthetic resin is fluorinated by treatment with fluorine gas may be used.
  • the sheet holding unit 10 includes a roller R1 and a roller R2 that convey the porous sheet Ts while applying a predetermined tension to the porous sheet Ts. At least one of the roller R1 and the roller R2 is rotatably provided by a driving unit (not shown). By rotating the roller, the endless porous sheet Ts can be rotated in one direction.
  • the substrate holding unit 20 has an impression drum DR that conveys the substrate P.
  • the impression drum DR is formed in a shape in which the outer peripheral surface DRa is a cylindrical surface, such as a cylindrical shape or a columnar shape, and the outer periphery is covered with a rubber material or a resin material having an appropriate thickness.
  • substrate P is conveyed in the state wound by outer peripheral surface DRa of the impression drum DR.
  • the impression drum DR is provided so as to be rotatable in the circumferential direction of the outer peripheral surface DRa by a rotation driving unit (not shown).
  • the impression drum DR is provided at a position where the substrate P wound around the outer peripheral surface DRa is in close contact with (or close to) the outer peripheral surface Ta of the porous sheet Ts.
  • the tension rollers TR1 and TR2 are arranged so that a certain length of the porous sheet Ts is in close contact with the substrate P wound around the outer peripheral surface DRa of the impression drum DR with respect to the longitudinal direction (feeding direction) of the porous sheet Ts. Provided.
  • the gas supply unit 30 is disposed inside the endless belt-like porous sheet Ts.
  • the gas supply unit 30 includes a gas ejection roller ABR that presses the porous sheet Ts against the substrate P and supplies gas to the porous sheet Ts, and a gas supply unit that can supply gas to the gas ejection roller ABR. 35.
  • FIG. 3 is a perspective view illustrating a configuration of the gas supply unit 30.
  • the gas ejection roller ABR includes a cylindrical shaft (tubular metallic shaft) 31 formed in a cylindrical shape, and bearings arranged one by one at both ends in the axial direction of the cylindrical shaft 31.
  • a cylindrical porous tube 33 that is formed in a cylindrical shape using a porous material and is rotatably supported by the bearing portion 32 outside the cylindrical shaft 31; and an outer peripheral surface of the cylindrical shaft 31; And a magnetic fluid 34 provided between the inner peripheral surface of the porous tube 33.
  • the porous tube 33 is formed by, for example, molding a porous ceramic material into a cylindrical shape having a predetermined inner and outer diameter with a thickness of several millimeters.
  • the porous tube 33 can allow pressurized gas to pass through an infinite number of minute porous (pores) from the inner peripheral surface toward the outer peripheral surface.
  • the average dimension and density of the porous are set according to the minimum dimension (line width or the like) of the pattern shape by the exposed portion 14 formed on the first surface 11a of the porous sheet Ts.
  • FIG. 4 is a perspective view showing a state in which the cylindrical porous tube 33 shown in FIG. 3 is removed, and the cylindrical shaft 31 has a hollow portion 31a.
  • the said hollow part 31a is connected to the gas supply part 35 via gas supply paths 35a, such as piping, for example.
  • the cylindrical shaft 31 has an opening 31b (a jet part) penetrating the hollow part 31a and the outside.
  • the opening 31b is formed in a slot shape with a length corresponding to the width of the porous sheet Ts in the direction in which the axis of the cylindrical shaft 31 (or the rotation center line of the porous tube 33) extends, and via the gas supply path 35a. Thus, it becomes a jet outlet for jetting the gas supplied from the gas supply section 35.
  • the pressure of the ejected gas is applied to the second surface 11b of the porous sheet Ts, and the pressurized gas that has passed through the porous layer 11 of the porous sheet Ts fills the exposed portion 14 on the first surface 11a side.
  • a force for peeling from the first surface 11a is applied to the pattern layer made of the material to be transferred.
  • the opening 31b of the cylindrical shaft 31 shown in FIGS. 3 and 4 is directed toward the impression drum DR. Therefore, the pattern layer made of the material to be transferred filled in the exposed portion 14 on the first surface 11a side of the porous sheet Ts is peeled off from the first surface 11a and strongly pressed against the surface of the substrate P to be transferred. .
  • the transfer force (crimping force) for pressing the pattern layer made of the material to be transferred on the porous sheet Ts side against the substrate P is the holding force between the substrate P and the porous sheet Ts by the impression drum DR and the porous tube 33.
  • the back pressure that the ejected gas presses against the second surface 11b side of the porous sheet Ts and the peeling force from the exposed portion 14 of the material to be transferred by the ejected gas are determined.
  • the bearing portion 32 supports the porous tube 33 so as to be rotatable in the circumferential direction of the cylindrical shaft 31. Since the porous tube 33 is formed of a porous material over a circumference of the circumferential direction, the pressurized gas from the opening 31b of the cylindrical shaft 31 can pass over the circumference of the circumference.
  • the second surface 11 b of the porous sheet Ts is in close contact with the outer peripheral surface 33 a of the porous tube 33.
  • the porous tube 33 can be rotated around the cylindrical shaft 31 by the bearing portion 32. For this reason, for example, the porous tube 33 is rotated in accordance with the movement of the porous sheet Ts, or is rotated in accordance with the rotation of the impression drum DR driven by a rotation drive unit (motor or the like). It is possible to
  • the magnetic fluid 34 shown in FIGS. 3 and 4 is filled in a slight gap (for example, 1 to several millimeters) formed between the outer peripheral surface of the cylindrical shaft 31 and the inner peripheral surface of the porous tube 33.
  • the main action is to prevent the pressurized gas ejected from the opening 31 b from entering the gap between the outer peripheral surface of the cylindrical shaft 31 and the inner peripheral surface of the porous tube 33. Therefore, the magnetic fluid 34 functions as a seal that enhances the airtightness between the opening 31 b and the inner peripheral surface of the porous tube 33.
  • the magnetic fluid 34 is captured by a magnetomotive member (permanent magnet, electromagnet, etc.) embedded in the outer peripheral surface of the cylindrical shaft 31.
  • a magnetomotive member permanent magnet, electromagnet, etc.
  • a strong magnetism generator IR earth permanent magnet
  • the transfer device 100 has a pattern layer forming portion PH that forms a pattern layer on the exposed portion 14 formed on the outer peripheral surface Ta of the porous sheet Ts, for example.
  • the pattern layer forming part PH functional materials constituting the pattern layer, for example, conductive ink containing nano metal particles, ultraviolet curable resin containing carbon nanowires, organic substances and oxides that crystallize when dried and become semiconductors
  • a print head that prints (fills) a liquid or gel-like functional material such as a solvent on the exposed portion 14 of the porous sheet Ts is used.
  • an ink jet head that can drop the functional material with the exposed portion 14 being aimed at is suitable as the print head, but is used in screen printing, gravure printing, letterpress printing, offset printing, and the like. (Lithographic plate or cylinder) can also be used as the head.
  • the base metal layer 12 and the plating layer 13 formed on the outer peripheral surface Ta of the porous sheet Ts serve as a partition layer (convex portion), and the surrounding exposed portion 14 is formed. It becomes a recess. Therefore, after the functional material is uniformly or selectively applied to the region where the exposed portion 14 on the porous sheet Ts is formed as the pattern layer forming portion PH, the base metal layer 12 and the plating layer 13 are used. It may have a coating mechanism that removes the functional material remaining on the partition wall layer and leaves the functional material in the exposed portion 14.
  • the pattern layer formation part PH may be provided with two or more so that it may rank with the conveyance direction of the porous sheet Ts.
  • the transfer device 100 has a support mechanism PLT that supports the inner peripheral surface Tb of the portion of the porous sheet Ts where the pattern layer (layer filled in the exposed portion 14) is formed by the pattern layer forming portion PH.
  • a support mechanism PLT for example, an air pad type holder that supports the inner peripheral surface Tb in a non-contact manner by a flat support surface, a rotating drum around which a part of the porous sheet Ts is wound, or the like can be used. .
  • the transfer device 100 has a predetermined relationship with respect to the exposed portion 14 of the porous sheet Ts in a state where the porous sheet Ts is supported by the support mechanism PLT as shown in FIG. A transferred material (liquid or gel functional material) is filled to form the transferred pattern layer 15.
  • the bottom portion of the exposed portion 14 (the first surface 11a of the porous layer 11) filled with the functional material to be the transferred pattern layer 15 has a molecular structure that has liquid repellency with respect to the functional material. That is, it is desirable that the functional material is difficult to enter the porous layer 11 and has poor adhesion.
  • a chemical treatment that modifies the surface of the bottom of the exposed portion 14 (the first surface 11a of the porous layer 11) with a fluorine group for example, a solution of a SAM (Self-Assemble-Monolayer) material having liquid repellency.
  • Application may be performed by a mist deposition method or the like so as not to fill the porous layer 11.
  • the transfer device 100 rotates the roller R1 and the roller R2 to move the porous sheet Ts, and also rotates the impression drum DR to move the substrate P, thereby moving the first surface of the porous sheet Ts.
  • the transferred pattern layer 15 formed on 11a (Ta) and the transfer target region on the substrate P are brought into contact (pressure bonding).
  • the pressurized gas is ejected from the opening 31b of the cylindrical shaft 31 constituting the gas ejection roller ABR toward the second surface 11b (Tb) of the porous sheet Ts.
  • the transfer device 100 supplies gas at a predetermined pressure from the gas ejection roller ABR to the inner peripheral surface Tb of the porous sheet Ts. Since the gas flow supplied from the inner peripheral surface Tb to the inside of the porous layer 11 is blocked in the region where the base metal layer 12 and the plating layer 13 are formed, pressure is applied to the exposed portion 14. . By this pressure (peeling force), the transferred pattern layer 15 formed on the exposed portion 14 is pressed toward the substrate P, and the transferred pattern layer 15 is bonded (transferred) to the substrate P.
  • the transferred pattern layer 15 arranged on the exposed portion 14 is transferred to the substrate P as shown in FIG.
  • the porous sheet Ts and the substrate P are conveyed.
  • the transferred pattern layer 15 formed on the porous sheet Ts is continuously transferred onto the substrate P.
  • the surface of the substrate P is modified in advance or a thin film that improves the adhesion is formed in order to improve the adhesion with the functional material constituting the transferred pattern layer 15. It is desirable to keep it.
  • an adjustment mechanism for changing the circumferential width of the opening portion 31b of the cylindrical shaft 31 through which the pressurized gas is jetted is provided, or the opening portion 31b.
  • the opening shape itself may be changed.
  • FIG. 8A shows a case where a blade plate 31 w that makes the width in the circumferential direction of the opening variable is provided in the vicinity of the outer periphery of the opening 31 b of the cylindrical shaft 31.
  • the blade plate 31w is configured to be movable in the circumferential direction of the cylindrical shaft 31, and can adjust the circumferential width of the region on the inner circumferential surface of the porous tube 33 to which the pressurized gas is sprayed.
  • FIG. 8B shows an example in which the outlets of the pressurized gas formed on the outer peripheral surface of the cylindrical shaft 31 are made into small openings 31h that are discretely arranged in the axial direction instead of being made into a continuous slot shape in the axial direction.
  • Each of the small openings 31 h communicates with a groove 31 g that extends in the axial direction on the inner peripheral surface of the cylindrical shaft 31.
  • the jet outlet is constituted by a plurality of small openings 31h
  • the area of the magnetic fluid 34 surrounding these small openings 31h can be reduced, and there is also an advantage that the magnet generator Mg such as a permanent magnet can be reduced.
  • the opening through which the pressurized gas is ejected is narrowed down, and the flow velocity of the gas ejected toward the inner peripheral surface of the porous tube 33 is increased. It is also possible to increase the force for peeling the film from the exposed portion 14.
  • a minute gap for example, several ⁇ m to 10 ⁇ m
  • the porous sheet Ts and the substrate P are relatively positioned on the micron order immediately before the transfer.
  • the transfer device 100 includes the porous layer 11 formed of a porous material having a predetermined thickness, and the transferred pattern layer 15 formed on the first surface 11a side of the porous layer 11.
  • the outer peripheral surface of the porous sheet Ts is a sheet holding portion 10 that holds the porous sheet Ts having the substrate P and the substrate P to which the transferred pattern layer 15 of the porous sheet Ts can be transferred (scheduled to be transferred). Since the substrate holding unit 20 that is held in close contact with or close to Ta and the gas supply unit 30 that supplies a gas of a predetermined pressure from the second surface 11b of the porous layer 11 toward the first surface 11a, the porous layer 11 is porous.
  • the transferred pattern layer 15 disposed on the outer peripheral surface Ta of the porous sheet Ts is pushed out to the substrate P by the pressure of the gas supplied through the sheet Ts. Thereby, it can suppress that the pattern layer 15 remains in the porous sheet Ts at the time of transcription
  • FIG. 9 shows an overall configuration of a device manufacturing system (substrate processing apparatus) 1 to which the transfer apparatus 100 of the first embodiment is applied.
  • a pretreatment device U1 that performs a predetermined pretreatment (surface modification or the like) on the long substrate P wound around the supply roller FR1, was pretreated.
  • a transfer device U2 that performs pattern transfer on the substrate P and a post-processing device U3 that performs subsequent processing on the substrate P on which the pattern has been transferred are provided.
  • the transfer device U2 As the transfer device U2, the transfer device 100 of the first embodiment is used.
  • the transfer device U2 forms a pattern for forming a pattern on the surface of the endless belt-like porous sheet Ts in addition to the sheet holding unit 10, the substrate holding unit 20, and the gas supply unit 30 described in the first embodiment.
  • Device 40, cleaning device 50 (maintenance unit) for cleaning porous sheet Ts after the pattern on porous sheet Ts is transferred to substrate P by transfer device U2, and drying device for drying porous sheet Ts after cleaning 60 (maintenance unit), and a substrate processing device 70 (maintenance unit) that performs predetermined substrate processing on the surface of the porous sheet Ts after drying.
  • the surface of the porous sheet Ts2 subjected to the base treatment is patterned with various electrode parts and wiring parts for TFT and organic EL by a printing method or an ink jet method.
  • a plurality of print head parts (print head part PH1, print head part PH2 and print head part PH3) to be applied and formed, and the back surface of porous sheet Ts2 corresponding to each print head part (PH1, PH2, PH3)
  • a support mechanism PLT such as a flat air pad holder to support or a rotating drum around which the porous sheet Ts2 is partially wound is provided.
  • the substrate P wound around the supply roller FR1 is sent to the pretreatment device U1 at a predetermined speed in the X direction by the nipped drive roller DR1.
  • the pretreatment device U1 forms a base layer on the surface of the substrate P, that is, a downward surface Pa in the figure, such that pattern transfer (fixing) is strong.
  • the underlayer is formed by irradiating the surface of the substrate P with an energy beam such as an electron beam to form a modified surface layer (an activated surface), and the pattern material to be transferred is firmly attached to the substrate P. It is formed by a method of depositing a thin binder layer to arrive.
  • the pre-processed substrate P changes its conveying direction in a non-contact manner by the air turn bar ATB, and in the order of the roller R1, the air turn bar ATB, the impression drum DR, the air turn bar ATB, the roller R2, and the air turn bar ATB in the transfer device U2. It is passed over and transported to the next post-processing device U3.
  • the rotation speed and torque of the roller R1 and the roller R2 are controlled so that the substrate P is wound around the impression drum DR while maintaining a predetermined tension in the transport direction.
  • the outer peripheral portion of the impression drum DR is made of metal or hard rubber, and the outer peripheral surface is formed in a cylindrical shape with high roundness.
  • a gas ejection roller ABR a tension roller TR1, the tension roller TR2, and the gas ejection roller ABR can all be adjusted in position in the Z direction by an actuator Act.
  • the gas ejection roller ABR is disposed on the back side of the porous sheet Ts1 when the porous sheet Ts1 and the substrate P are in close contact (pressure contact) at the lower portion of the impression drum DR. Squeezed gas is ejected from the surface, and the transferred pattern layer 15 formed on the upper surface of the porous sheet Ts1 is neatly peeled off.
  • the porous sheet Ts from which the transferred pattern layer 15 has been peeled off by the transfer device U2 is folded back through the rollers R10 and R11, sent to the wet cleaning tank in the cleaning device 50, and sprayed from a high-pressure cleaning nozzle or the like.
  • the cleaning liquid is then cleaned, and then rinsed with pure water.
  • the porous sheet Ts is sent into the drying device 60 and dried by warm air or infrared irradiation so that moisture taken into the porous material is sufficiently removed.
  • the dried porous sheet Ts (with the base metal layer 12 and the plating layer 13) is sent to the base processing apparatus 70, and the base preparation necessary for pattern formation is performed again.
  • the pattern material has a certain property of having a certain level of liquid repellency.
  • the SAM material exemplified above may be selectively applied to the exposed portion 14 of the porous sheet.
  • the porous sheet Ts2 subjected to the base treatment is folded back by the roller R12 and the roller R13 and is sent to the pattern forming apparatus 40 again.
  • a tension adjusting mechanism using an air turn bar ATB is provided between the rollers R12 and R13, and the tension of the entire endless belt-like porous sheet Ts is adjusted by moving the air turn bar ATB in the X direction by an actuator Act. Is done.
  • the device manufacturing system 1 has the substrate holding unit 20 (substrate transfer unit) that transfers the substrate P formed in a band shape and the substrate P transferred by the substrate holding unit 20.
  • a plurality of substrate processing units (a pre-processing device U1, a transfer device U2, and a post-processing device U3) that perform processing, and the transfer device U2 according to the first embodiment of the present invention is used as the transfer device U2.
  • the transferred pattern layer 15 can be prevented from remaining on the porous sheet Ts. Thereby, the device manufacturing system 1 with high processing accuracy and high yield can be obtained.
  • the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
  • the base metal layer 12 is formed on the first surface 11a of the porous layer 11 by the vapor deposition method, and the plating layer 13 is formed thereon.
  • the present invention is not limited to this.
  • the vapor deposition film 16 may be formed on the first surface 11 a of the porous layer 11, and then the vapor deposition film 16 may be etched to form a pattern by the exposed portion 14.
  • the surface 16a of the vapor deposition film 16 corresponds to the outer peripheral surface Ta of the porous sheet Ts.
  • the gas supplied to the porous sheet Ts is described as an example, but the present invention is not limited to this.
  • a functional material in the exposed portion 14 of the porous sheet Ts as the transferred pattern layer 15, a liquid such as pure water may be used as the fluid. good.
  • the configuration using the porous sheet Ts as the porous plate has been described as an example.
  • the present invention is not limited to this.
  • a pattern layer (a partition layer formed by the base metal layer 12 and the plating layer 13 and the transferred pattern layer 15) is directly formed on the surface of the porous tube 33 of the gas ejection roller ABR shown in FIG. 3, and the porous tube 33 is patterned.
  • a configuration may be adopted in which the layers are brought into direct contact with the substrate P.
  • the porous tube 33 is formed of a flexible thin plate-like porous plate that can be bent with a predetermined curvature, and the other surface of the thin plate-like porous plate is on the inner surface of the cylindrical shaft 31. It is provided in a rolled state.
  • the gas ejection roller ABR can attract
  • a configuration in which a vacuum pump or the like is connected to the hollow portion 31a of the cylindrical shaft 31 may be mentioned.
  • the case where the one-step pattern layer 15 is transferred onto the substrate P is exemplified, but as shown in FIG. 11, two or more steps of the pattern layer 15A can be formed.
  • a layer 16M is formed, and a second pattern layer 16N is stacked thereon.
  • a pattern layer 15A having a multistage structure can be formed. it can.
  • the multi-layer pattern layers 16N and 16M formed in close contact with the porous layer 11 of the porous sheet Ts are formed by depositing the same material layer thickly and uniformly, and then depositing the deposited layer as the first layer of the porous layer 11.
  • the first etching is performed by applying the first mask for removing the surface 11a, and then the second etching is performed by applying the second mask for removing as the second step. May be.
  • a pixel circuit portion of an active matrix type organic EL (AMOLED) display is a manufacturing object, and a formation method thereof will be described.
  • the pixel circuit portion of the AMOLED display has a circuit configuration as shown in FIG. 12A, for example, and a video signal bus line Sy to which a signal corresponding to the luminance of the video signal is supplied, and a scanning signal for selecting a horizontal scanning line (synchronization).
  • Each pixel (RGB sub-pixel) is supplied with a first thin film transistor TR1 (hereinafter referred to as TFT-TR1) that switches On / Off of the light emitting layer OLED, and a current corresponding to the luminance of the video signal to the light emitting layer OLED.
  • TFT-TR1 first thin film transistor TR1
  • TFT-TR2 second thin film transistors TR2
  • the source electrode S of the TFT-TR1 is connected to the video signal bus line Sy
  • the gate electrode G of the TFT-TR1 is connected to the scanning bus line Sh.
  • the gate electrode G of the TFT-TR2 is connected to the drain electrode D of the TFT-TR1
  • the drain electrode D of the TFT-TR2 is connected to the power supply bus line Vdd
  • the source electrode S of the TFT-TR2 is the anode of the light emitting layer OLED.
  • the cathode side of the light emitting layer OLED is connected to the power supply bus line Vss, and the light emission time of the light emitting layer OLED is held between the gate electrode G of the TFT-TR2 (drain electrode D of TFT-TR1) and the power supply bus line Vss.
  • a capacitor CP is connected.
  • FIG. 12B shows an example of a planar arrangement in the case where the circuit configuration as shown in FIG. 12A is formed on the substrate P described in the previous embodiments.
  • a round insulating layer Iso is sandwiched between intersections of the video signal bus line Sy, the scanning bus line Sh, and the power supply bus line Vdd (Vss).
  • the semiconductor layer Sc constituting the TFT-TR1 and TFT-TR2 is formed on the lowermost side (substrate P side) in this embodiment, and the drain electrode D and the source electrode S are formed thereon, and the gate insulation is formed thereon.
  • An insulating layer Iso that becomes a film is formed, and a gate electrode G is further formed thereon.
  • FIG. 12C shows a cross-sectional structure taken along line C-C ′ in FIG. 12B across the drain electrode D and the source electrode S of the TFT-TR1 and across the drain electrode D of the TFT-TR2.
  • an insulating support layer MR that integrally supports the semiconductor layer Sc, the drain electrode D, and the source electrode S of each TFT is formed on the surface of the substrate P, and on the support layer MR.
  • the insulating layer Iso as the gate insulating film, the gate electrode G, or some bus lines are stacked.
  • the transfer method using the porous sheet Ts described in the second embodiment and the like can be applied by interposing such a support layer MR.
  • FIG. 13A shows a state in which the support layer MR is formed on the porous sheet Ts as shown in FIG. 5 or 10 and transferred (bonded) to the substrate P.
  • the support layer MR has an appropriate planar dimension (for example, 50 ⁇ m ⁇ 25 ⁇ m) including the source electrode S, the drain electrode D, and the semiconductor layer Sc, which are the main parts of the TFT-TR1 and TFT-TR2, and the porous sheet Ts.
  • the porous layer 11 is formed in the exposed portion 14 (see FIG. 5 or 10) where the porous layer 11 is exposed.
  • the thickness of the support layer MR including the source electrode S, the drain electrode D, and the semiconductor layer Sc is about the total thickness of the base metal layer 12 and the plating layer 13 laminated on the upper surface (11a) of the porous layer 11 ( Several hundred nm to several ⁇ m).
  • the support layer MR as shown in FIG. 13A is first formed on the first surface 11a of the porous layer 11 in the exposed portion 14 of the porous sheet Ts as a first step.
  • a source electrode S and a drain electrode D of each TFT are formed of a resistance material (metal film, carbon nanotube, etc.).
  • FIG. 13B is a partial cross-sectional view of the porous sheet Ts including the exposed portion 14, and
  • FIG. 13C is a plan view of the exposed portion 14.
  • the width of the gap Gp opposed to the source electrode S and the drain electrode D is also called a channel length, and is precisely processed in order to keep various characteristics of the TFT within a desired range.
  • a photoresist As a method of precisely positioning and forming the source electrode S and the drain electrode D on the surface 11a of the porous layer 11 in the exposed portion 14 (a window-shaped region surrounded by the partition wall by the plating layer 13), a photoresist is used.
  • Lithography method including exposure process using energy rays, development process, etching process
  • photo using photosensitive functional material that changes surface lyophilicity and liquid repellency by UV irradiation instead of photoresist
  • An assist method such as electroless plating that does not require development and etching
  • a printing method in which each electrode is directly drawn with ink containing conductive nanoparticles using an ink jet printer can be used.
  • a lithography method or a photo assist method is suitable.
  • the electrode is formed as one linear (rectangular) pattern in which the source electrode S and the drain electrode D are connected on the surface 11 a of the porous layer 11, a portion corresponding to the gap Gp is applied to the laser beam. If a process of cutting (cutting) with a spot can be used, the gap Gp can be formed with sufficient accuracy even by a printing method.
  • the adhesion between the electrodes S and D and the surface 11a of the porous layer 11 is neither excessively increased nor excessively decreased.
  • the material of the porous layer 11 and the average porous size of the surface 11a are selected, and the surface 11a is pretreated (activated by UV irradiation or the like) as necessary.
  • FIGS. 14A and 14B a solution-like semiconductor material (organic semiconductor, oxide semiconductor) is formed so as to cover the gap Gp between the source electrode S and the drain electrode D of each TFT. , Carbon nanotubes, etc.) are applied, and the semiconductor layer Sc is formed by an appropriate crystal orientation treatment.
  • FIG. 14A is a plan view of the exposed portion 14
  • FIG. 14B is a partial cross-sectional view of the porous sheet Ts including the exposed portion 14.
  • the semiconductor layer Sc may be formed in a range that reliably covers the gap Gp, and it is preferable to use a printing method using an inkjet printer or the like in terms of accuracy.
  • a certain high temperature is required for crystallization.
  • a flexible substrate made of a PET resin is used as the substrate P
  • its glass transition temperature is about 100 °
  • extreme deformation (shrinkage) occurs when a temperature higher than that is applied.
  • a porous film made of polyimide as the porous layer 11
  • a high temperature treatment of about 200 ° to 250 ° is possible.
  • the porous sheet Ts has a metal layer 12, a plating layer (metal) 13, and metal-based electrodes S and D.
  • the droplets of the semiconductor layer Sc can be crystallized (orientated) at a high temperature of about 200 ° to 250 °, and an improvement in TFT performance can be expected.
  • the choice of the material which can be utilized as the semiconductor layer Sc also spreads. If the material of the porous layer 11 is ceramic instead of polyimide, a higher temperature treatment is possible.
  • an insulating solution material that becomes the support layer MR is formed on the entire exposed portion 14 (concave portion) where the source electrode S, the drain electrode D, and the semiconductor layer Sc are formed as shown in FIGS. 14A and 14B.
  • an ultraviolet curable resin or the like is applied with a uniform thickness.
  • An ink jet printer can also be used for this application. If only the surface of the plating layer 13 around the exposed portion 14 can be set in a highly liquid repellent state, an insulating solution material is filled in the exposed portion 14 by a mist deposition method or a dip method. May be.
  • the porous sheet Ts is irradiated with ultraviolet rays and cured to an appropriate hardness.
  • the solvent component in the solution material is removed and cured appropriately by irradiation with infrared rays or microwaves or heating with a heater.
  • the support layer MR is formed in the state as shown in FIG. 13A on the porous sheet Ts by the above first to third steps, and as described in the previous embodiments, the porous sheet Ts.
  • a pressurized gas may be supplied to the back surface 11b side of the substrate, and the support layer MR may be transferred (pressed) to a predetermined position on the substrate P.
  • the source electrode S and the drain electrode D are exposed on the upper surface of the support layer MR, as is apparent from the cross-sectional structure of FIG. 12C. Therefore, when various bus lines Sy, Sh, Vdd, and gate electrodes G are laminated on the source electrode S and the drain electrode D by a conductive ink by a printing method such as inkjet, electrical continuity is ensured. Will be.
  • the support layer MR on the substrate P is covered with the semiconductor layer Sc and has dimensions (area) that do not cover the ends of the source electrode S and the drain electrode D. Then, an insulating layer Iso that becomes a gate insulating film is formed.
  • This insulating layer Iso is applied with a liquid-repellent photosensitive functional material on the support layer MR, and the portion corresponding to the insulating layer Iso is modified to be lyophilic with a photo assist method in which the portion corresponding to the insulating layer Iso is modified to be lyophilic. It is formed by a combination of a printing method such as an ink jet method, a mist deposition method, or a dip (immersion) method in which a solution material to be the insulating layer Iso is applied to the finished portion.
  • a printing method such as an ink jet method, a mist deposition method, or a dip (immersion) method in which a solution material to be the insulating layer Iso is applied
  • the gate electrode G and various bus lines Sy, Sh, Vdd, and Vss are printed on the upper surface of the insulating layer Iso, the support layer MR, or the surface of the substrate P by a printing method such as inkjet. It is formed by an electroless plating method using a photo assist method.
  • a liquid-repellent photosensitive functional material is applied to the surface of the support layer MR in the step of forming the insulating layer Iso, the conductive ink that becomes the gate electrode G of the TFT-TR2 as shown in FIG. 12C.
  • the surface of the end portion of the drain electrode D of the TFT-TR1 to be stacked has high liquid repellency (due to fluorine molecules). Therefore, the surface of the support layer MR and the substrate P is irradiated with ultraviolet rays corresponding to the pattern shapes of the gate electrode G and various bus lines Sy, Sh, Vdd, and Vss to change the liquid repellency of the portion to lyophilic. Keep it quality.
  • the bus line Vdd is positioned at the lowest layer, the bus line Sy is positioned above it, and the bus line Sh is positioned above it. ing. Therefore, after the formation of the insulating layer Iso that becomes the gate insulating film, the conducting wire portion that is first formed by the conductive ink becomes the gate electrode G and the bus line Vdd of the TFT-TR2. Therefore, the surfaces of the support layer MR and the substrate P are modified to be lyophilic by irradiating ultraviolet rays in a shape corresponding to the gate electrode G and the bus line Vdd of the TFT-TR2.
  • the substrate P When the amine group having plating reducing ability is exposed only on the surface portion modified (excluded by fluorine molecules) by the ultraviolet irradiation, the substrate P is immersed in the electroless plating solution after the ultraviolet irradiation, so that the TFT A wiring corresponding to the gate electrode G of -TR2 and the bus line Vdd is formed.
  • the drain electrode D of the TFT-TR1 is electrically connected to the gate electrode G of the TFT-TR2
  • the drain electrode D of the TFT-TR2 is electrically connected to the bus line Vdd.
  • an insulating layer Iso is formed on the bus line Vdd at the intersection of the bus line Sy and the bus line Sh. This can also be performed by a wet process using only a printing method such as inkjet or a combination of a photo assist method and a printing method. Thereafter, the bus line Sy is formed by an electroless plating method or the like by a printing method or photo assist. As a result, the source electrode S of the TFT-TR1 is electrically connected to the bus line Sy. Next, an insulating layer Iso is formed at the intersection of the bus line Sy with the bus line Sh, and then the bus line Sh and the gate electrode G of the TFT-TR1 are electrolessly plated by a printing method or photo assist. Etc. are formed.
  • the stacked structure of the source electrode S, the drain electrode D, and the semiconductor layer Sc constituting the TFT is integrally formed on the porous sheet Ts.
  • the temperature conditions for crystallization can be relaxed and the temperature can be increased, and the performance (electron mobility, On / Off ratio, etc.) of the TFT can be improved while being a wet process.
  • the source electrode S and the drain electrode D exposed on the surface of the support layer MR have a level difference corresponding to the thickness of the support layer MR with respect to the surface of the substrate P. Therefore, the various bus lines Sy, Sh, Vdd (Vss) located on both the surface of the substrate P and the surface of the support layer MR are formed so as to straddle the stepped portion around the support layer MR. When the stepped portion around the support layer MR is nearly vertical, various bus lines Sy, Sh, Vdd (Vss) straddling the stepped portion are not formed well and are easily disconnected.
  • the edge (side surface of the partition wall) of the exposed portion 14 formed on the porous sheet Ts spreads outward when viewed from the inside of the exposed portion 14 (window shape).
  • the tapered portion SL is used.
  • the edge portion SL ′ around the support layer MR transferred onto the substrate P is inclined toward the inside of the support layer MR, and the inclined edge portion SL is inclined. Disconnection of various bus lines Sy, Sh, and Vdd (Vss) straddling 'is suppressed.
  • the TFT is configured as a top gate type.
  • the electrodes (source and drain) constituting the TFT are similarly formed in the exposed portion 14 of the porous sheet Ts.
  • D) and a laminated structure of a semiconductor layer, a laminated structure of a semiconductor layer and an insulating layer, or a laminated structure of an electrode (gate G) and an insulating layer can be integrally formed and transferred to the substrate P side.
  • a TFT is a stack of a first electrode layer serving as a source and a drain facing each other with a gap Gp (channel length), a semiconductor layer, a gate insulating layer, and a second electrode layer serving as a gate covering the gap Gp.
  • Consists of structures In this embodiment, among these layers, two layers of the first electrode layer (the source electrode S and the drain electrode D) and the semiconductor layer (Sc) are used as a laminated structure together with the support layer MR, and the porous sheet Ts. Although formed in the exposed portion 14, a three-layer structure including the first electrode layer, the semiconductor layer, and the gate insulating layer (Iso) may be formed together with the support layer MR. In that case, a gate insulating layer (Iso) is first formed only in a part of the exposed portion 14 of the porous sheet Ts, and over the first surface 11 a of the porous layer 11 in the exposed portion 14.
  • the first electrode layer (source electrode S and drain electrode D) is formed, and further the semiconductor layer (Sc) is formed on the inner side of the gate insulating layer (Iso).
  • a semiconductor layer (Sc) is first formed on the first surface 11a in the exposed portion 14 of the porous sheet Ts, and after crystallization by heating or the like, A two-layer structure in which the gate insulating layer (Iso) is formed thereover so as to cover the semiconductor layer can be obtained.
  • the gate electrode G is formed in advance at a predetermined position on the substrate P, and the stacked structure of the gate insulating layer and the semiconductor layer is transferred onto the gate electrode G together with the support layer MR.
  • the support layer MR at least two of the electrode layer, the semiconductor layer, and the insulating layer constituting the thin film transistor (TFT) are formed in advance on the porous sheet Ts as a laminated structure, Good transfer to the substrate P is possible.
  • TFT thin film transistor
  • the porous sheet Ts used in each of the above embodiments may have a structure in which two types of porous films having different average pore diameters, film thicknesses, or porosity are laminated.
  • a first porous layer having an average pore diameter of 5 ⁇ m or less and a thin film thickness (for example, 20 ⁇ m) is provided on the surface side of the porous sheet Ts on which structures such as TFTs and wiring layers are formed, and the porous sheet Ts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Printing Methods (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing Of Printed Wiring (AREA)
PCT/JP2013/071006 2012-08-06 2013-08-02 転写装置及び基板処理装置 WO2014024797A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014529472A JP6287839B2 (ja) 2012-08-06 2013-08-02 基板処理装置
CN201380040811.8A CN104507685B (zh) 2012-08-06 2013-08-02 转印装置以及基板处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-173983 2012-08-06
JP2012173983 2012-08-06

Publications (1)

Publication Number Publication Date
WO2014024797A1 true WO2014024797A1 (ja) 2014-02-13

Family

ID=50068026

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/071006 WO2014024797A1 (ja) 2012-08-06 2013-08-02 転写装置及び基板処理装置

Country Status (3)

Country Link
JP (4) JP6287839B2 (zh)
CN (2) CN104507685B (zh)
WO (1) WO2014024797A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106501299B (zh) * 2016-10-18 2019-07-26 北京印刷学院 一种自组装印刷电子产品连续烧结实验装置
CN106393972A (zh) * 2016-11-25 2017-02-15 邹杨 一种数码喷绘、毯带转移、免蒸洗的制造方法及装置
CN107351554B (zh) * 2017-08-14 2018-11-09 湖南嘉业达电子有限公司 用于打印标识的油墨打印机及印章的制作方法
TWI661947B (zh) * 2017-11-17 2019-06-11 財團法人工業技術研究院 凹版轉印機台
JP2021003806A (ja) * 2018-01-29 2021-01-14 スリーエム イノベイティブ プロパティズ カンパニー 糸状部材への印刷方法、及び糸状のこぎり
JP6564105B2 (ja) * 2018-04-23 2019-08-21 株式会社三共 遊技機
CN108749294B (zh) * 2018-08-24 2020-04-24 合肥鑫晟光电科技有限公司 一种转印装置及转印方法
CN110676383A (zh) * 2019-09-29 2020-01-10 合肥京东方显示技术有限公司 曲面基板的制作装置及采用该装置的制作方法
CN113211949B (zh) 2020-02-06 2022-08-26 京东方科技集团股份有限公司 图案转印设备及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000043238A (ja) * 1998-08-03 2000-02-15 Dainippon Printing Co Ltd 高精細印刷装置および印刷方法
JP2004209819A (ja) * 2002-12-27 2004-07-29 Sharp Corp 転写装置
JP2006302814A (ja) * 2005-04-25 2006-11-02 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス層の形成方法及び有機エレクトロルミネッセンス素子

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045430B2 (ja) * 1977-10-01 1985-10-09 キヤノン株式会社 画像形成方法
JPS5793169U (zh) * 1980-11-28 1982-06-08
JPS5968291A (ja) * 1982-10-14 1984-04-18 Matsushita Electric Ind Co Ltd スクリ−ン印刷方法
JP2866730B2 (ja) * 1990-11-14 1999-03-08 日本電信電話株式会社 半導体回路の形成方法
JPH06234202A (ja) * 1993-02-08 1994-08-23 Kyushu Hitachi Maxell Ltd スクリーン印刷用マスクの製造方法
JP3556102B2 (ja) * 1998-09-17 2004-08-18 松下電器産業株式会社 印刷方法及び印刷装置
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
JP2003257654A (ja) * 2001-12-25 2003-09-12 Hitachi Ltd 画像表示装置およびその製造方法
US6620657B2 (en) * 2002-01-15 2003-09-16 International Business Machines Corporation Method of forming a planar polymer transistor using substrate bonding techniques
CN1446039A (zh) * 2002-03-14 2003-10-01 华通电脑股份有限公司 便于残锡脱落的锡膏印刷装置
JP2004319538A (ja) * 2003-04-10 2004-11-11 Seiko Epson Corp 半導体装置の製造方法、集積回路、電子光学装置及び電子機器
CN100391747C (zh) * 2004-02-25 2008-06-04 理想科学工业株式会社 模版印刷机
JP4700976B2 (ja) * 2005-02-10 2011-06-15 キヤノン株式会社 電界効果型有機トランジスタの製造方法
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
CN101681570B (zh) * 2007-04-13 2013-09-04 株式会社尼康 显示元件的制造方法、显示元件的制造装置及显示元件
JP2009073005A (ja) * 2007-09-20 2009-04-09 Nec Corp スクリーン印刷方法及びスクリーン印刷装置
JP2009078425A (ja) * 2007-09-26 2009-04-16 Toppan Printing Co Ltd 印刷用版およびその製造方法および印刷物の製造方法
JP5294141B2 (ja) * 2008-03-25 2013-09-18 株式会社ニコン 表示素子の製造装置
CN101587839B (zh) * 2008-05-23 2011-12-21 清华大学 薄膜晶体管的制备方法
JPWO2010001537A1 (ja) * 2008-06-30 2011-12-15 株式会社ニコン 表示素子の製造方法及び製造装置、薄膜トランジスタの製造方法及び製造装置、及び回路形成装置
KR20110050580A (ko) * 2008-08-04 2011-05-16 파나소닉 주식회사 플렉시블 반도체 장치 및 그 제조 방법
JP2011201271A (ja) * 2010-03-26 2011-10-13 Toppan Printing Co Ltd マスク面塗布材料押込みスクリーン印刷装置及びその印刷法
JP5576796B2 (ja) * 2010-04-13 2014-08-20 パナソニック株式会社 有機半導体装置及び有機半導体装置の製造方法
JP2012000946A (ja) * 2010-06-21 2012-01-05 Toppan Printing Co Ltd 印刷定盤及び裏面用基材並びにフィルム基材のパターン形成方法
CN103081149B (zh) * 2010-08-29 2016-07-06 国立大学法人信州大学 有机半导体微粒材料、有机半导体薄膜、有机半导体膜形成用分散液、有机半导体薄膜的制造方法及有机薄膜晶体管
JP2012060057A (ja) * 2010-09-13 2012-03-22 Komuratekku:Kk 有機薄膜トランジスタの製法
CN101973157B (zh) * 2010-09-28 2012-01-04 深圳市凯力诚实业发展有限公司 高速印刷装置、方法及生产线
CN102452239A (zh) * 2010-10-22 2012-05-16 韩国科学技术院 图案转印方法和图案转印装置以及利用该方法制造的产品
JP2012119531A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 半導体装置、半導体装置の製造方法、電気装置
CN202186106U (zh) * 2011-08-22 2012-04-11 安伦通讯设备(苏州)有限公司 一种网版印刷机吸胶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000043238A (ja) * 1998-08-03 2000-02-15 Dainippon Printing Co Ltd 高精細印刷装置および印刷方法
JP2004209819A (ja) * 2002-12-27 2004-07-29 Sharp Corp 転写装置
JP2006302814A (ja) * 2005-04-25 2006-11-02 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス層の形成方法及び有機エレクトロルミネッセンス素子

Also Published As

Publication number Publication date
CN107253394B (zh) 2019-05-03
JP6665953B2 (ja) 2020-03-13
JP6950767B2 (ja) 2021-10-13
JP2018082214A (ja) 2018-05-24
JP6481784B2 (ja) 2019-03-13
CN104507685B (zh) 2017-06-09
JP2019096890A (ja) 2019-06-20
JP2020145419A (ja) 2020-09-10
JP6287839B2 (ja) 2018-03-07
CN104507685A (zh) 2015-04-08
CN107253394A (zh) 2017-10-17
JPWO2014024797A1 (ja) 2016-07-25

Similar Documents

Publication Publication Date Title
JP6481784B2 (ja) デバイス製造方法
US8193526B2 (en) Transistor having an organic semiconductor with a hollow space
US20100127271A1 (en) Electronic circuit structure and method for forming same
JP6593336B2 (ja) デバイス製造方法
CN101388436A (zh) 图案形成方法，有机场效应晶体管的制造方法，以及柔性印刷电路板的制造方法
US9064778B2 (en) Method of manufacturing thin film transistor
KR20200105981A (ko) 디바이스 제조 방법
JP5838692B2 (ja) Ｃｍｏｓ半導体装置の製造方法
US8969127B2 (en) Apparatus for and method of fabricating an electronic device by transfer of material onto a substrate
Cui et al. Coating and printing processes
US9337245B2 (en) Method of manufacturing organic electroluminescence device
JP4866543B2 (ja) 静電吸着体及びこの静電吸着体を用いたシート状被吸着物の移送方法
JP5157582B2 (ja) 有機薄膜トランジスタの製造方法
JP2015005618A (ja) 有機半導体膜の製造方法、有機半導体膜、薄膜トランジスタ、アクティブマトリクス装置、電気光学装置および電子機器
JP5261910B2 (ja) 凸版、印刷機、有機電子デバイスの製造方法、及び凸版の製造方法
JP6671335B2 (ja) 機能性膜のパターニング方法、電子デバイスの製造方法
Cuia et al. aPrintable Electronics Research Center, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou, China; bSchool of Physics and Electronics, Hunan University, Changsha, China
US9343680B2 (en) Printed electronic device
JP2008091123A (ja) 凸版、印刷機、有機電子デバイスの製造方法、及び凸版の製造方法
JP2009291755A (ja) 機能膜の製造方法および製造装置
KR20140079668A (ko) 진동 인가 접촉식 인쇄 장치
Kusaka et al. High resolution printing processes with high throughput, enhanced step coverage, and high design flexibility
TW201517066A (zh) 功能性膜之圖案化方法、電子裝置之製造方法及透明導電性薄膜

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13827816

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2014529472

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13827816

Country of ref document: EP

Kind code of ref document: A1