WO2014021173A1 - Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 - Google Patents

Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 Download PDF

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WO2014021173A1
WO2014021173A1 PCT/JP2013/070098 JP2013070098W WO2014021173A1 WO 2014021173 A1 WO2014021173 A1 WO 2014021173A1 JP 2013070098 W JP2013070098 W JP 2013070098W WO 2014021173 A1 WO2014021173 A1 WO 2014021173A1
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sputtering target
thin film
alloy
forming
alloy thin
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PCT/JP2013/070098
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English (en)
French (fr)
Japanese (ja)
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後藤　裕史
松崎　均
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株式会社コベルコ科研
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Priority to KR1020157002511A priority Critical patent/KR101621671B1/ko
Priority to CN201380036833.7A priority patent/CN104471102A/zh
Publication of WO2014021173A1 publication Critical patent/WO2014021173A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a sputtering target for forming a Cu alloy thin film and a method for producing the same. Specifically, the present invention relates to a sputtering target for forming a Cu alloy thin film capable of reducing abnormally coarsened cluster particles called particles or splash generated during sputtering and a method for manufacturing the same.
  • the Cu alloy sputtering target of the present invention is a thin film for an electrode of a thin film transistor (TFT) used for an electronic device such as a display device such as a liquid crystal display or an organic EL display or a touch sensor, a thin film for a reflective electrode, and an electric connection wiring to a sensor. Thin film and the like; It is suitably used for forming a thin film such as a reflective film and a semi-transmissive film used for optical recording media such as CD, DVD, HD-DVD and BD.
  • TFT thin film transistor
  • Cu thin films have low electrical resistance and are relatively easy to process compared to Al.
  • wiring thin films constituting scanning electrodes and signal electrodes of display devices such as liquid crystal displays, and electronic devices such as touch sensors Used for electrical connection wiring thin film.
  • pure Cu is inferior in adhesion to a substrate such as glass.
  • pure Cu has problems such as being easily oxidized and discoloring its surface, and having a large diffusion coefficient in a semiconductor. Therefore, in order to improve such problems of pure Cu, various Cu alloy thin films containing an appropriate selection element according to the application have been proposed.
  • Patent Document 1 discloses Mn, Ga as a Cu alloy for an electrode wiring of a liquid crystal display device capable of forming an oxide coating layer capable of suppressing the progress of Cu oxidation on a Cu surface in an oxidizing atmosphere containing oxygen.
  • Cu alloys containing elements such as Li and Li are disclosed.
  • Mn forms an oxide that is easier to form an oxide than Cu and that hardly allows oxygen to pass through, even though the melting point is higher than that of Cu.
  • Patent Document 2 discloses an optical recording medium that prevents or suppresses sulfidation of a Cu recording layer due to diffusion of S from the protective layer and that does not cause a recording bit error, particularly in an optical disk using a protective layer containing ZnS.
  • Metal elements such as Mn and Zn are described as elements capable of obtaining the above.
  • a Cu thin film is formed by a sputtering method using a sputtering target.
  • a sputtering method first, an inert gas such as argon is introduced into the vacuum vessel at a low gas pressure, and a high voltage is applied between the substrate and a sputtering target composed of the same material as the thin film material, A plasma discharge is generated.
  • the gas ionized by the plasma discharge here argon
  • the constituent atoms of the sputtering target are knocked out by inelastic collision, and the constituent elements are attached and deposited on the substrate to form a thin film. It is a method of forming.
  • a vacuum vapor deposition method can be mainly cited as a method for forming a metal thin film.
  • the sputtering method has an advantage that a thin film having the same composition as the sputtering target can be continuously formed.
  • the metal thin film to be formed is an alloy material
  • an alloy element such as a rare earth element that does not dissolve in Cu can be forcibly dissolved in the thin film.
  • the sputtering method is an industrially very advantageous film forming method in which continuous and stable film formation on a large area substrate is possible.
  • abnormally coarsened cluster particles called particles or splash are generated during sputtering and may be taken into the thin film.
  • coarsened cluster particles are taken into the thin film, protrusions remain on the surface of the thin film, which may cause electrical shorts, or malfunctions may occur during wiring pattern formation, resulting in pattern abnormalities. This will cause harmful effects such as a broken line.
  • Mn preferentially reacts with oxygen over Cu to suppress the oxidation of Cu, or in the Cu recording layer due to the diffusion of S from the ZnS-containing protective layer.
  • a Cu—Mn alloy containing Mn is highly expected to be used as a thin film forming material such as an electrode thin film for a display device.
  • Mn is likely to be concentrated on the surface, a Cu—Mn alloy sputtering target containing Mn is likely to segregate Mn during sputtering and abnormal discharge such as splash may occur more significantly.
  • the present invention has been made in view of the above circumstances.
  • the purpose is a sputtering target used to form a Cu-Mn alloy thin film useful as an electrode film for display devices such as liquid crystal displays, etc., which reduces cluster particles that have become abnormally coarse during sputtering.
  • Another object of the present invention is to provide a sputtering target for forming a Cu alloy thin film with less generation of splash and splash, and a method for producing the same.
  • the sputtering target for forming a Cu alloy thin film of the present invention that has solved the above problems is a Cu alloy sputtering target containing at least Mn and having a Mn content of 2 atomic% or more and 20 atomic% or less.
  • the gist is that the Vickers hardness of the t / 2 cross section in the thickness direction of the target is 50HV or more and 100HV or less.
  • the sputtering target has a Mn content of 2 atomic% or more and 10 atomic% or less.
  • the Vickers hardness of the t / 2 cross section in the thickness direction of the sputtering target is 60HV or more and 90HV or less.
  • the manufacturing method of the sputtering target for Cu alloy thin film formation which concerns on this invention which was able to solve the said subject is 50% or more of the total rolling reduction rate at the time of hot rolling with respect to Cu alloy which satisfies the said composition.
  • the main point is that annealing after hot rolling is performed at a temperature of 450 ° C. or more and 600 ° C. or less for 2 hours or more.
  • the total rolling reduction during the hot rolling is 50% or more and 75% or less.
  • the annealing temperature after the hot rolling is 450 ° C. or higher and 550 ° C. or lower.
  • the annealing time after the hot rolling is 2 hours or more and 5 hours or less.
  • a Cu—Mn alloy thin film having excellent in-plane uniformity is obtained with little variation in composition, film thickness, and electrical resistance within the substrate plane (in the same plane) even for large-area substrates. It is done. As a result, the yield of final products such as display devices including the Cu—Mn thin film is significantly improved.
  • FIG. 1 is a graph of No. 1 in Table 1 in Example 1.
  • FIG. It is a figure which shows the EPMA test result of 16 Cu-Mn alloy sputtering targets.
  • the present inventors processed Cu—Mn alloy containing at least Mn into a sputtering target such as a sheet shape and formed a film on a large-area substrate with excellent in-plane uniformity such as composition and film thickness, In order to provide a Cu—Mn alloy sputtering target capable of stably forming a Cu—Mn alloy thin film for a long period of time without causing abnormal discharge, investigations have been repeated.
  • the sputtering target for forming a Cu alloy thin film of the present invention is a Cu alloy sputtering target containing at least Mn and having a Mn content of 2 atomic% or more and 20 atomic% or less, in the thickness direction of the sputtering target. It is characterized in that the Vickers hardness of the t / 2 cross section is 50HV or more and 100HV or less.
  • a Cu alloy containing Mn may be referred to as a Cu—Mn alloy.
  • the Cu—Mn alloy contains at least Mn, and contains Mn in a range of 2 atomic% to 20 atomic%.
  • Mn is an element that dissolves in the Cu metal but does not dissolve in the Cu oxide film. Further, as described in Patent Document 1 and Patent Document 2 described above, Mn forms an oxide film that reacts with oxygen preferentially over Cu to suppress oxidation of Cu, or a ZnS-containing protective layer. It is very useful as an element that can prevent or suppress sulfidation of the Cu recording layer due to diffusion of S.
  • Mn diffuses and concentrates at the grain boundaries and interfaces, and the concentrated layer adheres to the transparent substrate. It is thought that the property improves.
  • the Mn content in the Cu alloy is set to 2 atomic% or more. Preferably it is 4 atomic% or more, More preferably, it is 8 atomic% or more. However, if the upper limit of the Mn content exceeds 20 atomic%, there is a problem such as brittleness, so the upper limit is made 20 atomic% or less. Preferably it is 15 atomic% or less, More preferably, it is 10 atomic% or less.
  • the Cu alloy may contain at least Mn in the above range, and the balance is Cu and inevitable impurities.
  • the following elements can be further added to the Cu alloy for the purpose of imparting other characteristics.
  • At least one element selected from the group consisting of Ag, Au, C, W, Ca, Mg, Ni, Al, Sn, and B may be added in the range of 0.2 to 10 atomic%. good. Thereby, adhesiveness with a board
  • elements may be added alone or in combination of two or more.
  • said content is a single quantity, when the said element is included independently, and when it contains 2 or more types, it is a total amount.
  • Zn may be added in the range of 0.2 to 10 atomic%.
  • the Cu alloy sputtering target of the present invention has the above-mentioned composition and has the greatest feature in that the Vickers hardness of the t / 2 cross section in the thickness direction of the sputtering target is 50 HV or more and 100 HV or less.
  • the Vickers hardness of the t / 2 cross section in the thickness direction of the sputtering target is 50 HV or more and 100 HV or less.
  • the occurrence of splash during sputtering film formation is reduced.
  • a Cu—Mn alloy sputtering target containing at least Mn in the range of 2 to 20 atomic% is used as in the present invention, even if the hardness of the sputtering target becomes too high as demonstrated in the examples described later. It has been found that splash is likely to occur.
  • Preferred Vickers hardness is 50HV or more and 100HV or less, more preferably 60HV or more and 90HV or less.
  • the t / 2 cross section in the thickness direction of the sputtering target is a plane parallel to the rolling direction among the cross sections perpendicular to the rolling surface, and t (thickness) with respect to the thickness t of the sputtering target.
  • the Vickers hardness of the sputtering target is calculated as follows. First, the sputtering target is cut so that the above-mentioned cross section (measurement surface) appears. At this time, cut pieces are collected from three places (the front end, the center, and the rear end with respect to the rolling direction). Next, polishing with emery paper or diamond paste is performed to smooth the measurement surface. Thereafter, electrolytic etching with Barker's solution (an aqueous solution in which HBF 4 (tetrafluoroboric acid) and water were mixed at a volume ratio of 1:30) was performed, and the hardness at the center of the thickness of the measurement surface was measured with a micrometer. It is measured using a Vickers hardness meter (AVK-G2 manufactured by Akashi Seisakusho Co., Ltd.). Let the average value of the hardness of the measured three cut pieces be Vickers hardness.
  • Barker's solution an aqueous solution in which HBF 4 (tetrafluoroboric acid) and water
  • the t / 2 cross section in the thickness direction was measured in consideration of the uniformity of the structure.
  • the reason why the occurrence of splash and the like can be reduced by appropriately controlling the Vickers hardness of the Cu—Mn alloy sputtering target is not clear in detail, but is presumed as follows.
  • To stabilize the discharge by reducing the occurrence of splash and the like it is effective to increase the annealing temperature and recrystallize.
  • the Vickers hardness becomes too high, the structure (crystal grains, etc.) is unsatisfactory. It becomes uniform and the discharge is considered unstable.
  • the Vickers hardness is too low, precipitation of Mn proceeds and segregates, and it is assumed that there is a possibility that the discharge becomes non-uniform.
  • the Cu alloy sputtering target of the present invention has been described above.
  • the above-described Cu alloy sputtering target is manufactured by adopting a melting casting method for the purpose of reducing manufacturing costs, manufacturing processes, and improving yield.
  • the melt casting method is a method for producing an ingot from a Cu alloy molten metal, and is widely used for producing a sputtering target.
  • the sputtering target is usually manufactured by melting casting ⁇ (hot forging if necessary) ⁇ hot rolling ⁇ annealing ( ⁇ cold rolling ⁇ annealing if necessary).
  • the hot rolling conditions particularly the total rolling reduction during hot rolling
  • the annealing conditions annealing temperature, annealing time, etc.
  • the melt casting process is not particularly limited, and a process usually used in the production of a sputtering target can be appropriately employed so that a Cu—Mn alloy ingot having a desired composition can be obtained.
  • typical casting methods include DC (semi-continuous) casting, thin plate continuous casting (double roll type, belt caster type, propel type, block caster type, etc.).
  • hot forging After the ingot of the Cu—Mn alloy ingot is formed as described above, hot rolling is performed (details will be described later), but hot forging may be performed to adjust the shape as necessary.
  • the hot forging in this case also serves as a soaking process. In order to control the Vickers hardness, it is preferable to control the hot forging temperature to about 800 to 900 ° C. and the hot forging heating time to about 3 to 18 hours.
  • Hot rolling is performed after performing the above hot forging as necessary.
  • the total rolling reduction during hot rolling is controlled to 50% or more. Preferably it is 55% or more. From the viewpoint of Vickers hardness control, the higher the total rolling reduction, the better. However, if it becomes too high, there is a problem such as cracking, so the upper limit is preferably made 75% or less. More preferably, it is 70% or less.
  • the total rolling reduction during hot rolling is controlled within the above range.
  • the maximum rolling reduction per pass is not particularly limited, but is preferably about 5 to 10%.
  • the hot rolling start temperature and the hot rolling end temperature are not particularly limited. However, considering the ease of control of Vickers hardness, it is preferable to control the hot rolling start temperature to about 600 to 800 ° C. and the hot rolling end temperature to about 400 to 500 ° C.
  • annealing After hot rolling as described above, annealing is performed. In order to control the Vickers hardness, it is necessary to anneal at a temperature range of 450 to 600 ° C. for 2 hours or more.
  • the annealing temperature is less than 450 ° C.
  • the desired Vickers hardness cannot be obtained even if the annealing time is controlled to 2 hours or more.
  • the annealing temperature exceeds 600 ° C., there are problems such as coarsening of crystal grains.
  • a preferable annealing temperature is 550 ° C. or less.
  • the annealing time is less than 2 hours, the desired Vickers hardness cannot be obtained.
  • the annealing time is long. However, if the annealing time is too long, there is a problem such as coarsening of crystal grains. A more preferable annealing time is 4 hours or less.
  • the Vickers hardness of the Cu—Mn alloy sputtering target can be controlled within a predetermined range by the above method, but after that, further cold rolling ⁇ annealing (second rolling, annealing for strain relief) is performed. Also good.
  • the cold rolling conditions are not particularly limited, but it is preferable to control the annealing conditions. For example, it is recommended to control the annealing temperature to about 150 to 250 ° C. and the annealing time to about 1 to 5 hours.
  • the cold rolling rate during cold rolling may be in a normal range (for example, 20 to 40%).
  • a sputtering target is obtained. You may join the obtained sputtering target to a desired backing plate as needed.
  • Example 1 Cu—Mn alloy ingots (thickness: 100 mm) containing various amounts of Mn shown in Table 1 were formed by DC casting.
  • the ingot was hot forged ⁇ hot rolled under the conditions shown in Table 1 (hot-rolling finish temperature was 600 ° C.) and rolled into a thin plate having a thickness of 20 mm, and then annealed under the conditions shown in Table 1. In this example, subsequent cold rolling and annealing are not performed.
  • the hot rolling was performed with a total rolling reduction (total rolling reduction) of 50% and an annealing time of 2 hours, but with a total rolling reduction of 50% to 75% and an annealing time of 2 hours to 5 hours. It is confirmed that similar results can be obtained if any.
  • machining rounding and lathe processing
  • machining was performed to produce a disk-shaped Cu—Mn alloy sputtering target (size: diameter 101.6 mm ⁇ thickness 5.0 mm).
  • the Vickers hardness (average value of three measurement points) of the t / 2 cross section in the thickness direction of each sputtering target thus manufactured was measured by the method described above.
  • the column of Vickers hardness in Table 1 in addition to the average value, the measured values at each of three locations are listed in the columns (1), (2), and (3).
  • DC magnetron sputtering was performed on a Si wafer substrate (size: diameter 101.6 mm ⁇ thickness 0.50 mm) using a magnetron sputtering apparatus of “Sputtering System HSR-542S” manufactured by Shimadzu Corporation.
  • the sputtering conditions are as follows.
  • the presence or absence of splash generated during discharge was evaluated by observing the surface of the thin film with an optical microscope (magnification: 1000 times).
  • those having protrusions of 1 ⁇ m ⁇ or more are regarded as splash, and in the observation field of view, even one splash was evaluated as having a splash, and no splash was seen at all. evaluated.
  • No. Examples 1 to 4 are examples in which the amount of Mn in the Cu—Mn alloy is 2 atomic%.
  • No. No. 4 is an example produced by a method that satisfies the requirements of the present invention, and since the Vickers hardness was appropriately controlled, no occurrence of splash was observed. In contrast, no. In Nos. 1 to 3, since the annealing temperature was low, the Vickers hardness exceeded the range specified in the present invention, and splash occurred.
  • Analyzer “Electron Beam Microanalyzer JXA8900RL” manufactured by JEOL Analysis conditions Acceleration voltage: 15.0 kV Irradiation current: 5.012 ⁇ 10 ⁇ 8 A Beam diameter: Minimum (0 ⁇ m) Measurement time: 100.00ms Number of measurement points: 400 ⁇ 400 Measurement interval: 1 ⁇ m Measurement area: 400 ⁇ m ⁇ 400 ⁇ m Measurement position: Center in the thickness direction Number of fields of view: 1 field of view
  • CP means a reflected electron image.
  • FIG. 1 no Mn segregation is observed and it can be seen that the particles are uniformly dispersed.
  • the electric field is locally concentrated due to the difference in conductivity and sputtering rate, the abnormal discharge occurs and splash occurs, and particles adhere to the film surface.
  • the above results suggest that the generation of coarse particles can be reduced.

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PCT/JP2013/070098 2012-08-03 2013-07-24 Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 WO2014021173A1 (ja)

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KR1020157002511A KR101621671B1 (ko) 2012-08-03 2013-07-24 Cu 합금 박막 형성용 스퍼터링 타깃 및 그 제조 방법
CN201380036833.7A CN104471102A (zh) 2012-08-03 2013-07-24 Cu合金薄膜形成用溅射靶及其制造方法

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Cited By (1)

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CN111197148A (zh) * 2018-11-20 2020-05-26 宁波江丰电子材料股份有限公司 靶材的制作方法

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Publication number Priority date Publication date Assignee Title
JP6398594B2 (ja) * 2014-10-20 2018-10-03 三菱マテリアル株式会社 スパッタリングターゲット
JP6435981B2 (ja) * 2015-04-28 2018-12-12 三菱マテリアル株式会社 銅合金スパッタリングターゲット
CN106435261B (zh) * 2016-11-28 2018-01-12 河北宏靶科技有限公司 一种有超细晶组织的长寿命铜锰基合金靶材及其加工方法
US10760156B2 (en) * 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target

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