JP2014043643A - Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 - Google Patents

Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 Download PDF

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Publication number
JP2014043643A
JP2014043643A JP2013152854A JP2013152854A JP2014043643A JP 2014043643 A JP2014043643 A JP 2014043643A JP 2013152854 A JP2013152854 A JP 2013152854A JP 2013152854 A JP2013152854 A JP 2013152854A JP 2014043643 A JP2014043643 A JP 2014043643A
Authority
JP
Japan
Prior art keywords
sputtering target
thin film
alloy
alloy thin
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013152854A
Other languages
English (en)
Japanese (ja)
Inventor
Yasushi Goto
裕史 後藤
Hitoshi Matsuzaki
均 松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobelco Research Institute Inc
Original Assignee
Kobelco Research Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobelco Research Institute Inc filed Critical Kobelco Research Institute Inc
Priority to JP2013152854A priority Critical patent/JP2014043643A/ja
Publication of JP2014043643A publication Critical patent/JP2014043643A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2013152854A 2012-08-03 2013-07-23 Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 Pending JP2014043643A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013152854A JP2014043643A (ja) 2012-08-03 2013-07-23 Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012173279 2012-08-03
JP2012173279 2012-08-03
JP2013152854A JP2014043643A (ja) 2012-08-03 2013-07-23 Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法

Publications (1)

Publication Number Publication Date
JP2014043643A true JP2014043643A (ja) 2014-03-13

Family

ID=50027851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013152854A Pending JP2014043643A (ja) 2012-08-03 2013-07-23 Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法

Country Status (5)

Country Link
JP (1) JP2014043643A (zh)
KR (1) KR101621671B1 (zh)
CN (1) CN104471102A (zh)
TW (1) TWI525207B (zh)
WO (1) WO2014021173A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016175151A1 (ja) * 2015-04-28 2016-11-03 三菱マテリアル株式会社 銅合金スパッタリングターゲット
JP2020537046A (ja) * 2017-10-13 2020-12-17 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 銅マンガンスパッタリングターゲット

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6398594B2 (ja) * 2014-10-20 2018-10-03 三菱マテリアル株式会社 スパッタリングターゲット
CN106435261B (zh) * 2016-11-28 2018-01-12 河北宏靶科技有限公司 一种有超细晶组织的长寿命铜锰基合金靶材及其加工方法
CN111197148B (zh) * 2018-11-20 2021-11-19 宁波江丰电子材料股份有限公司 靶材的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005533187A (ja) * 2002-07-16 2005-11-04 ハネウェル・インターナショナル・インコーポレーテッド 銅スパッタリングターゲット及び銅スパッタリングターゲットの形成方法
WO2008041535A1 (en) * 2006-10-03 2008-04-10 Nippon Mining & Metals Co., Ltd. Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING
WO2011034127A1 (ja) * 2009-09-18 2011-03-24 古河電気工業株式会社 スパッタリングターゲットに用いられる銅材料およびその製造方法
WO2013038962A1 (ja) * 2011-09-14 2013-03-21 Jx日鉱日石金属株式会社 高純度銅マンガン合金スパッタリングターゲット
WO2013038983A1 (ja) * 2011-09-14 2013-03-21 Jx日鉱日石金属株式会社 高純度銅マンガン合金スパッタリングターゲット

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4756458B2 (ja) * 2005-08-19 2011-08-24 三菱マテリアル株式会社 パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット
JP4963037B2 (ja) * 2006-05-01 2012-06-27 株式会社アルバック スパッタリング用コバルトターゲット及びその製造方法
US9328411B2 (en) * 2008-02-08 2016-05-03 Jx Nippon Mining & Metals Corporation Ytterbium sputtering target and method of producing said target
KR20120062802A (ko) * 2009-08-28 2012-06-14 후루카와 덴키 고교 가부시키가이샤 스퍼터링 타겟용 구리재료 및 그 제조방법
CN102041479B (zh) * 2009-10-23 2013-08-28 株式会社神户制钢所 Al基合金溅射靶
CN102652182B (zh) * 2009-12-22 2014-06-18 三菱伸铜株式会社 纯铜板的制造方法及纯铜板
SG2014009989A (en) * 2011-09-30 2014-04-28 Jx Nippon Mining & Metals Corp Sputtering target and manufacturing method therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005533187A (ja) * 2002-07-16 2005-11-04 ハネウェル・インターナショナル・インコーポレーテッド 銅スパッタリングターゲット及び銅スパッタリングターゲットの形成方法
WO2008041535A1 (en) * 2006-10-03 2008-04-10 Nippon Mining & Metals Co., Ltd. Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING
WO2011034127A1 (ja) * 2009-09-18 2011-03-24 古河電気工業株式会社 スパッタリングターゲットに用いられる銅材料およびその製造方法
WO2013038962A1 (ja) * 2011-09-14 2013-03-21 Jx日鉱日石金属株式会社 高純度銅マンガン合金スパッタリングターゲット
WO2013038983A1 (ja) * 2011-09-14 2013-03-21 Jx日鉱日石金属株式会社 高純度銅マンガン合金スパッタリングターゲット

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016175151A1 (ja) * 2015-04-28 2016-11-03 三菱マテリアル株式会社 銅合金スパッタリングターゲット
JP2016204730A (ja) * 2015-04-28 2016-12-08 三菱マテリアル株式会社 銅合金スパッタリングターゲット
JP2020537046A (ja) * 2017-10-13 2020-12-17 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 銅マンガンスパッタリングターゲット
JP7297741B2 (ja) 2017-10-13 2023-06-26 ハネウェル・インターナショナル・インコーポレーテッド 銅マンガンスパッタリングターゲット

Also Published As

Publication number Publication date
TWI525207B (zh) 2016-03-11
KR101621671B1 (ko) 2016-05-16
WO2014021173A1 (ja) 2014-02-06
CN104471102A (zh) 2015-03-25
TW201425616A (zh) 2014-07-01
KR20150034220A (ko) 2015-04-02

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