WO2013187343A1 - オーバーレイ誤差測定装置、及びコンピュータープログラム - Google Patents
オーバーレイ誤差測定装置、及びコンピュータープログラム Download PDFInfo
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- WO2013187343A1 WO2013187343A1 PCT/JP2013/065909 JP2013065909W WO2013187343A1 WO 2013187343 A1 WO2013187343 A1 WO 2013187343A1 JP 2013065909 W JP2013065909 W JP 2013065909W WO 2013187343 A1 WO2013187343 A1 WO 2013187343A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/418—Imaging electron microscope
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6113—Specific applications or type of materials patterned objects; electronic devices printed circuit board [PCB]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Definitions
- the present invention relates to a measurement apparatus for measuring a semiconductor, a computer program for causing a computer to perform measurement, or a storage medium thereof, and particularly to a measurement apparatus suitable for measuring an overlay error of a sample in which a plurality of layers are stacked. .
- RET super-resolution techniques
- a dedicated pattern for overlaying is arranged around the shot area (for example, four corners) that is a unit of exposure, and the overlaying state of this shape is managed using an optical inspection device, but it is high.
- high-precision overlay management is important, and optical management is approaching its limit.
- Patent Document 1 describes a technique for measuring dimensions between patterns belonging to a plurality of layers. According to the measurement method disclosed in Patent Document 1, since it can be performed using an image in which an actual pattern that is actually formed is expressed, the dimension between patterns can be measured with very high accuracy. Can do.
- the dimension measurement between patterns can be performed with nano-level accuracy. It has been clarified by the inventors' investigation.
- the distance between patterns has become very close.
- the pattern shifts compared to the design data (layout data) due to the optical proximity effect (OPE).
- OPE optical proximity effect
- an overlay error measuring apparatus including an arithmetic processing unit that measures a pattern formed on a sample based on an image obtained by a charged particle beam apparatus is described below.
- the arithmetic processing unit measures a dimension between a plurality of patterns belonging to different layers by using a signal obtained by the charged particle beam device, and at the time of measuring the dimension, a pattern by an optical proximity effect
- An overlay error measuring apparatus that corrects the shift amount and executes dimension measurement between the plurality of patterns, and a computer program that realizes the measurement are proposed.
- an overlay error measurement device that selects and corrects a symmetrical pattern in which a plurality of patterns having the same shape are arranged on the layout data as a pattern for correcting the shift of the pattern due to the optical proximity effect, and realizes the measurement Propose a computer program.
- the figure which shows an example of a semiconductor measurement system The figure which shows an example of the database for the pattern shift correction by OPE.
- the figure which shows an example of the GUI screen which sets the conditions of an overlay error measurement.
- the flowchart which shows the visual field position setting process for panoramic image formation.
- the figure which shows the positional relationship of the some visual field position set for the panoramic image formation The figure explaining the example which evaluates the superimposition field between a plurality of fields of view for panorama image formation.
- FIG. 1 is a diagram illustrating an example of a pattern to be subjected to overlay measurement.
- a semiconductor wafer is configured by stacking a plurality of layers, and a semiconductor circuit is configured by stacking the layers.
- FIG. 1 shows a transistor structure having a diffusion layer in the lower layer (layer 1) and a gate layer in the upper layer (layer 2).
- overlay measurement is performed mainly by measuring the relative positions of the two layers.
- Overlay management and measurement technology in the semiconductor manufacturing process play an important role in the semiconductor mass production process. Further, with the recent progress of microfabrication technology, higher accuracy has been required. In particular, when the required overlay accuracy is about ⁇ 5 nm, error factors (lens thermal aberration and STI stress) generated in an actual device pattern cannot be ignored.
- the light of the optical inspection apparatus is There is a limit of resolution due to the wavelength, and it is difficult to evaluate the overlay error with sufficient accuracy. Further, the variation of the pattern in a wide area in the shot is increased due to the influence of the thermal aberration of the lens of the exposure apparatus, and the overlay management in the pattern at the corner of the shot is limited from the viewpoint of accuracy. Further, in the STI layer of the transistor, the gate shape varies due to the influence of the gate shape stress due to the influence of the peripheral contact hole.
- overlay measurement is performed based on a signal obtained by a charged particle beam apparatus such as a scanning electron microscope or an ion beam microscope capable of acquiring an image at a high magnification that cannot be acquired by an optical inspection apparatus.
- a charged particle beam apparatus such as a scanning electron microscope or an ion beam microscope capable of acquiring an image at a high magnification that cannot be acquired by an optical inspection apparatus.
- a scanning electron microscope SEM
- a scanning electron microscope for length measurement Critical
- CD-SEM Dimension-SEM
- a CD-SEM can acquire an image with a field of view of, for example, a size of 100 nm or less.
- a field of view of, for example, a size of 100 nm or less.
- measurement and observation can be performed at a very high magnification, There are some measurement error factors.
- RET includes an SRPC (super-resolution auxiliary pattern) process represented by an OPC (optical proximity effect correction) process used in a diffusion layer forming process, a gate layer forming process, a wiring process, and a contact hole forming process.
- SRPC super-resolution auxiliary pattern
- OPC optical proximity effect correction
- an apparatus for suppressing an overlay error measurement error and performing an accurate overlay error measurement based on a pattern misalignment caused by OPE will be described. Specifically, an example will be described in which the overlay management between layers is performed after correcting the misalignment based on OPE or the like and canceling the misalignment.
- FIG. 9 is a diagram showing an example of a scanning electron microscope that acquires an image for pattern measurement.
- An electron beam 903 extracted from an electron source 901 by an extraction electrode 902 and accelerated by an accelerating electrode (not shown) is focused by a condenser lens 904 that is a form of a focusing lens, and then is scanned on a sample 909 by a scanning deflector 905.
- a scanning deflector 905. Are scanned one-dimensionally or two-dimensionally.
- the electron beam 903 is decelerated by a negative voltage applied to an electrode built in the sample stage 908 and is focused by the lens action of the objective lens 906 and irradiated onto the sample 909.
- an image of the scanning region is formed by synchronizing the deflection signal to the scanning deflector 905 and the output of the detector 913.
- the scanning electron microscope illustrated in FIG. 9 includes a deflector (not shown) that moves the scanning region of the electron beam. This deflector is used to form an image of a pattern having the same shape existing at different positions. This deflector is also called an image shift deflector, and enables movement of the field of view (Field of View: FOV) of the electron microscope without moving the sample by the sample stage.
- the image shift deflector and the scan deflector may be a common deflector, and the image shift signal and the scan signal may be superimposed and supplied to the deflector.
- the control device 914 controls each component of the scanning electron microscope and forms a pattern on the sample based on a function of forming an image based on detected electrons and an intensity distribution of detected electrons called a line profile. It has a function to measure the pattern width.
- FIG. 10 is a diagram illustrating an example of a semiconductor measurement system.
- This system includes an overlay error measurement device 1001 that performs overlay error measurement based on signals (image data and contour line data) obtained by SEM, a design data storage medium 1002 that stores design data, and a design data.
- a simulator 1003 for executing simulation and an input device 1004 for inputting information required for measurement are included.
- the design data is expressed in, for example, the GDS format or the OASIS format, and is stored in a predetermined format.
- the design data can be of any type as long as the software that displays the design data can display the format and can handle the data as graphic data.
- the pattern selection unit 1005 selects a pattern for overlay error measurement based on information input from the input device 1004.
- This selection data is stored as measurement conditions, for example, and stored in a predetermined storage medium as an operation program (recipe) of the SEM and overlay error measurement apparatus 1001.
- the contour line extraction unit 1006 extracts a contour line based on the image data acquired by the SEM.
- the contour line extraction is executed by, for example, binarizing the SEM image and then thinning the edges.
- a luminance profile may be created in the perpendicular direction of the thinned edge, and a portion having a predetermined luminance may be used as the edge.
- the contour extraction unit 1006 is not necessary.
- the matching unit 1007 executes pattern matching between the contour line data and the graphic data based on the design data or the simulation data based on the design data. Details of the matching will be described later.
- the pattern position correction unit 1009 selectively corrects the position of the pattern selected by the pattern selection unit 1005 in the overlay data of the layout data and the contour line data.
- the correction conditions are stored in the correction condition database 1008, and the pattern is selectively moved based on the correction conditions.
- the overlay measurement unit performs overlay error measurement based on the correction data corrected by the pattern position correction unit 1009.
- the pattern transferred to one layer may be shifted or distorted due to the effect of the optical proximity effect. It is necessary to exclude the minutes and perform the overlay evaluation. That is, it is necessary to detect the true overlay error by separating the pattern shift and the pattern position deviation between the layers.
- the overlay error is measured mainly by the following procedure.
- Step 1 Selection of an overlay measurement target pattern
- Step 2 Automatic generation of a measurement recipe
- Step 3 Acquisition of an image by executing a recipe
- Step 4 Execution of OPE correction
- Step 5 Measurement of overlay error
- an overlay measurement target pattern is selected using semiconductor design data (layout data) or simulation data.
- a specific pattern such as a transistor having a two-layer structure such as a diffusion layer and a gate layer
- its coordinates such as a diffusion layer and a gate layer
- the size of the image acquisition region field of view
- the pattern or the evaluation area is determined by the above.
- the input device 1004 is for selecting a desired measurement target from graphic data such as layout data and simulation data stored in the design data storage medium 1002.
- (2) Automatic generation of measurement recipe Next, the selection pattern and the image of the evaluation area are acquired, and a recipe for executing the measurement based on the acquired image is automatically generated. Since the coordinate data of the pattern, etc. is stored in the design data, the SEM stage moving conditions, automatic pattern selection required for addressing, and length measurement box settings are set so that the field of view such as the SEM is positioned at the coordinates. Run automatically or semi-automatically.
- the addressing pattern is selected so that, for example, the measurement target pattern and the addressing pattern are positioned in the beam shiftable region of the SEM. An addressing pattern having a unique shape is selected to prevent erroneous detection.
- FIG. 13 is a diagram showing an example of a GUI (Graphical User Interface) screen for setting measurement conditions.
- This screen is displayed on the display screen of the input device 1004, for example.
- a layer Layer
- An evaluation target area pattern coordinates (position)
- FOV size SEM scanning area size
- stage moving conditions, beam deflection conditions, and the like are automatically set.
- a window (Pattern Type) for selecting the type of pattern to be measured and a window (Distance of OPE) 1301 for selecting the distance of the optical proximity effect (OPE) are provided.
- the pattern shift due to the optical proximity effect mainly depends on the distance between the pattern to be measured and the adjacent pattern. The closer the distance, the greater the influence. Therefore, for example, if the position less than the distance input to the window is corrected in accordance with a database stored in advance and overlay measurement is performed on the position, an accurate overlay error can be measured. Since the distance between adjacent patterns can be obtained by referring to the design data, if there is a pattern having an inter-pattern distance equal to or less than the above distance in the same layer in the evaluation target region, it is stored in the database. It is preferable to correct the pattern shift according to the conditions. Further, it is not always necessary to input distance information, and correction may be performed for all patterns in the evaluation target area.
- FIG. 11 is a diagram showing an example of correction data (table) stored in the correction condition database 1008.
- a correction amount (Shift amount) and a correction direction (Direction) are stored for each combination of a pattern type to be measured (Pattern Type) and an adjacent pattern (Adjacent pattern). Since the optical proximity effect changes according to the size and distance of adjacent patterns, it is preferable to store a correction amount and a correction direction for each combination.
- FIG. 12 is a diagram showing the positional relationship between the pattern A 1202 (upper layer pattern), the pattern 1201 (lower layer pattern), and the adjacent pattern b 1205.
- the pattern A 1202 and the pattern b 1205 are the same layer pattern
- the pattern 1201 is a lower layer pattern of these patterns.
- Line segments 1203, 1204, and 1206 are layout data of the pattern 1201, the pattern A 1202, and the adjacent pattern b 1205, respectively.
- the table shown in FIG. 11 stores the pattern shift amount by OPE and its direction when the pattern A 1202 and the adjacent pattern b 1205 are close to each other.
- FIG. 14 is a diagram showing an example.
- a transistor is selected as the pattern type.
- the transistors 1401 and 1402 do not have a pattern in which OPE is a concern in the vicinity, and an adjacent pattern 1404 is located in the vicinity of the transistor 1403.
- the recipe may be generated after the transistor 1403 is excluded from the overlay error measurement target.
- (3) Obtaining an Image by Executing a Recipe Using the recipe generated as described above, automatic measurement is performed to obtain an image including a pattern that is a measurement target of overlay error. The acquired image is subjected to overlay error measurement as described later.
- the pattern position correction unit 1009 shifts the position of the upper layer pattern so as to correct the shift by OPE.
- the position of the pattern A 1202 is selectively shifted based on the correction amount (x 1 , y 1 ) and the correction direction ( ⁇ 1 ) stored in the database.
- the correction amount (x 1 , y 1 ) and the correction direction ( ⁇ 1 ) stored in the database By correcting in this way, it is possible to perform proper evaluation even for a pattern in which overlay error and pattern shift due to OPE are mixed and it is difficult to evaluate overlay. It is also possible to obtain the overlay error only by calculation without actually shifting. Note that the SEM image is contoured, and the contour line belonging to the upper layer is selectively moved in the contour data without moving the contour line belonging to the lower layer. (5) Overlay Error Measurement The overlay measurement unit 1010 performs overlay error measurement using the pattern data in which the pattern shift due to OPE is corrected in step 4.
- the alignment is performed between the edge 1501 of the layout data of the lower layer pattern and the contour 1502 of the lower layer pattern, and the layout data of the upper layer pattern subjected to the alignment is aligned.
- Dimension measurement is performed between the center of gravity 1506 of the edge 1503 and the center of gravity 1507 of the contour line 1504 of the upper layer pattern.
- the alignment between the lower layer patterns is executed by searching for a position where the addition average value of the distance 1505 between the corresponding points of the layout data and the contour line is minimized.
- the pattern position correction is performed by the pattern position correction unit 1009 after the alignment (matching) of the layout data and the contour line is performed by the matching unit 1007. But it ’s okay.
- the reason for measuring the center of gravity position is that stable measurement is possible regardless of the deformation of the pattern, etc., but the overlay error is measured by measuring the distance between the layout data and the edge of the contour line. You may do it.
- the lower layer when performing measurement using actual patterns, the lower layer may be covered with the upper layer and may not be represented on the SEM image. In that case, multiple target patterns for overlay measurement are placed in the chip or in the shot. It is better to perform overlay measurement using this pattern (In chip overlay). In this case, a dedicated contact hole in which the lower layer can be seen is considered as a dedicated target. More specifically, when overlay measurement is performed, variations in the actual pattern used for measurement due to process causes (eg, lithography process, etching process, CMP process, etc.) in the semiconductor manufacturing process are included. May be. Therefore, in order to realize stable overlay measurement, it is desirable to place a plurality of optimum overlay measurement dedicated patterns for each process in a chip or shot and perform overlay measurement using these patterns.
- process causes eg, lithography process, etching process, CMP process, etc.
- the estimation of misalignment due to the optical proximity effect is performed by detecting a pattern symmetric with respect to each of the X and Y axes, calculating the misalignment amount from the distance between the symmetrical patterns, and using this amount as the object of overlay measurement.
- An example in which the pattern position is corrected will be described.
- FIG. 2 is a diagram showing a pattern structure in which six transistors are arranged.
- a pattern structure as illustrated in FIG. 2 is continuously arranged.
- the upper layer (layer 2) constituting the gate two linear patterns 201 and 202 are arranged adjacent to each other as shown in the figure, and the outer patterns 203 and 204 are arranged at the centers of the patterns 201 and 202. They are arranged symmetrically. Since the OPE with respect to the other pattern of one pattern included in the symmetry pattern such as the patterns 201 and 202 and the OPE with respect to one pattern of the other pattern are considered to be substantially the same, the shift amount (absolute value) due to OPE is also the same. It is thought that it is almost the same.
- the outer patterns 203 and 204 are also arranged symmetrically with respect to the center positions of the patterns 201 and 202, the shift amounts of the patterns 201 and 202 are opposite when the centers of the patterns 201 and 202 are used as a reference. It is considered that the same amount is shifted in the direction of.
- the position shifted symmetrically so that the interval between the two patterns 201 and 202 is the same as the design data is the OPE. This is considered to be the position of the patterns 201 and 202 in a state where there is no pattern shift due to
- Step 1 Determination of overlay target pattern
- Step 2 Search for symmetry pattern
- Step 3 Automatic generation of imaging recipe
- Step 4 Image acquisition for inspection and OPE correction
- Step 5 OPE correction calculation processing
- Step 6 Overlay measurement The following effects can be expected.
- the original correct pattern position can be obtained for the purpose of OPC calibration and verification (position correction between patterns). Therefore, highly accurate OPC is possible by reflecting this information in OPC modeling.
- FIG. 6 is a diagram showing a process of performing overlay error measurement after appropriately correcting the position of a symmetry pattern (a pattern in which two or more patterns having the same shape are arranged close to each other) in the design data.
- the condition selection of the symmetry pattern is performed by the input device 1004, for example.
- Step 1 Determination of overlay measurement pattern Based on the semiconductor design data (layout data), the coordinates and pattern shape of the overlapping portion of the two layers are calculated. Moreover, recipe information for imaging is automatically generated using the result.
- Step 2 Symmetry pattern determination Based on the semiconductor design data (layout data), the coordinates and pattern shape of the target pattern corresponding to the overlay measurement pattern are calculated. Moreover, recipe information for imaging is automatically generated using the result.
- the selection of the symmetric pattern may be performed based on, for example, the determination of whether or not the same-shaped pattern is arranged in a range narrower than a predetermined interval, or the design of the layout on which the upper layer is manufactured You may make it extract a symmetrical pattern using data.
- the pattern selection unit 1005 selects a pattern that meets the condition based on the condition of the symmetric pattern input by the input device 1004.
- Step 3 OPE correction by symmetry pattern
- a contour shape is generated from an SEM image acquired by a CD-SEM, and the position is corrected by the influence of the optical proximity effect of the pattern shape.
- FIG. 7 shows an example in which the symmetry pattern is shifted by the same amount due to the influence of the optical proximity effect. As illustrated in FIG. 7, the symmetry pattern is shifted to the left and right by the same amount.
- a distance between two patterns constituting the symmetry pattern (for example, a distance between centroid points) ⁇ xd is extracted from design data (layout data) or simulation shape data, and a contour line A distance ⁇ xc between two patterns constituting the symmetry pattern is obtained from the data, and ( ⁇ xc ⁇ xd) / 2 is calculated.
- the pattern position correction unit 1009 shifts the position of the symmetric pattern in the contour line data.
- Step 4 Overlay measurement Overlay measurement is performed by superimposing the contour line shape data of the two layers whose positions have been corrected as described above.
- the distance between the barycentric points of the pattern may be obtained as described above, or the distance between the edges may be measured.
- the overlay measurement unit 1010 performs overlay error measurement based on the distance between edges or the center of gravity with respect to the size of the visual field. However, in order to obtain a highly accurate deviation regardless of the deformation of the pattern, it is desirable to obtain the deviation between the centroids.
- the overlay measurement unit 1010 performs overlay error measurement from the center of gravity or edge position of the two patterns. More specifically, when measuring between centroid positions, between the centroid of the measurement target pattern in the layout data or simulation data and the centroid of the measurement target pattern in the contour line data obtained based on the SEM image. Measure overlay error by determining the distance.
- Fig. 8 shows an example of a measurement method using a dedicated pattern for overlay measurement.
- a pattern corresponding to each process to be measured (for example, a combination of contact holes and wiring patterns) is created in advance in an empty area of the mask of the product device, and the distance and width of the pattern between these two layers is measured. To do.
- the vertical relationship between the wiring and the contact hole may be covered with an insulating film or the like, and the edge between the two patterns to be measured may not be properly seen.
- the dedicated pattern for example, the edge of the pattern of the two layers can be detected so that the wiring pattern can be seen at the bottom of the hole.
- the pattern size represented by the finest rule value for the design rule of the device layer in the process is used.
- the overlay pattern is also manufactured under the same conditions as the effects of various processes that are actually produced at the time of device manufacture, so that overlay measurement can be performed in consideration of the process conditions.
- This dedicated pattern group is arranged in a plurality of empty areas and dummy pattern arrangement areas in each chip (for example, several tens to 100 positions) to detect a vector of pattern deviation for each chip and each shot. This information can be fed back to the function of the exposure apparatus management.
- FIG. 1 shows a dedicated target pattern for measuring the overlay between the lower layer pattern and the upper layer wiring and gate pattern.
- FIG. 2 shows a dedicated pattern for measuring an overlay by opening a lower layer wiring and an upper layer contact hole.
- a fine inspection pattern can be used as compared with the optical inspection apparatus, an allowable error of misalignment can be reduced. Further, misalignment management by using an inspection pattern having the same size as the actual device pattern can be realized at the device level. In addition, it is possible to perform overlay error measurement without the influence of lens aberration occurring in the optical apparatus. Furthermore, since a plurality of locations can be measured by In-Chip, distribution in the Wafer plane can be managed.
- FIG. 3 is a diagram illustrating another example in which overlay error measurement using a symmetry pattern is performed. Since the OPE for the other pattern of one pattern included in the symmetry pattern and the OPE for the other pattern of the other pattern are considered to be substantially the same, the shift amount (absolute value) due to the OPE is considered to be substantially the same. . That is, the center 305 between the centroids 303 and 304 of the contour line data 301 and 302 in which the overlay error and the OPE pattern shift are mixed is the same position as the center position between the overlay error-only patterns without the OPE pattern shift. become.
- the distance between the center 305 and the center 308 of the reference patterns 306 and 307 is set as an overlay error. That is, the difference ( ⁇ x, ⁇ y) between the coordinates (x 305 , y 305 ) of the center 305 and the coordinates (x 308 , y 308 ) of the center 308 is used as the overlay error amount, and Atan ( ⁇ y / ⁇ x) is the overlay error amount.
- the direction is used as the difference ( ⁇ x, ⁇ y) between the coordinates (x 305 , y 305 ) of the center 305 and the coordinates (x 308 , y 308 ) of the center 308.
- FIG. 4 is a diagram illustrating an example of a circuit pattern in which a lower layer pattern 401 and upper layer patterns 402 and 403 are arranged.
- the visual fields 407 and 408 are set in accordance with the positions of the layout data 404 and 405, and the overlapping regions 409 and 410 between the visual field 406 including the pattern 401 are set.
- the overlapping portion between the visual fields needs to include edges in at least two directions in order to perform accurate joining. This is because a two-dimensional position cannot be specified if there is an edge in only one direction.
- FIG. 5 is a diagram showing an example in which the visual field position is set in consideration of the pattern shift.
- the fields of view 501 and 502 are views showing an example in which the fields of view 407 and 408 are shifted by the shift amount of the pattern with reference to the database illustrated in FIG.
- FIG. 5 shows an example in which the pattern is shifted by ⁇ x with respect to the initial field setting position (fields 407 and 408).
- FIG. 16 is a flowchart showing a process of correcting the initial position of the visual field with reference to a database when creating a panoramic image.
- a plurality of fields of view for forming a panoramic image are set on the layout data (step 1601).
- an overlapping region is provided between a plurality of visual fields, and the overlapping region includes at least two line segments.
- step 1602 it is determined whether there is any pattern shift due to OPE in the panorama image formation area, and there is a pattern in which pattern shift occurs.
- the visual field position is moved based on the shift amount and the shift direction stored in the database.
- the superimposition state of the visual field (the visual field 406) in which a part of the visual field is superimposed before the position correction and the visual field after the visual field movement is confirmed (step 1604), and the edge required for the alignment is not included.
- the field of view 503 is divided. 504, and the position is shifted so as to follow the fields of view 501 and 502 by ⁇ x with respect to the field of view 406 (step 1605).
- the shift amount ⁇ x when it can be determined that the edge required for alignment is included in the overlapped region, the visual fields 503 and 504 may be moved by the shift amount. good.
- the SEM using the set or corrected visual field position as one of the image acquisition conditions.
- an imaging recipe (step 1606).
- Such an imaging recipe is stored, for example, in a storage medium such as a memory built in the control device 914 or the input device 1004, and is read as an operation program during SEM operation.
- the field of view can be set at an appropriate position regardless of the presence of the OPE.
- the simulation data is obtained as a result of predicting the shape of the pattern in consideration of the pattern formation conditions and the like with respect to the layout data stored in the design data storage medium 1002, and is performed by the simulator 1003.
- An important point in setting the formation conditions of the panoramic image is to have an appropriate overlapping portion (superimposed region) in the acquired image (field of view) as described above.
- this FOV position In order to optimally arrange this FOV position on the basis of design data, it is necessary to consider deformation and shift of the pattern due to OPE.
- the degree of deviation between the simulation shape and the layout shape based on the design data is obtained, and the visual field is set to an appropriate position based on the degree of deviation. More specifically, the performance of each part of the pattern is evaluated based on the EPE (Edge Placement Error) length measurement result between corresponding points of the layout data and simulation data (points that can be regarded as the same part of the pattern). An example of setting the visual field position according to the performance will be described.
- EPE Estimatment Placement Error
- FIG. 17 shows an evaluation value (degree of divergence between the two shapes in this example) of each part of the pattern calculated based on the EPE measurement result (EPE value) between the layout shape 1701 and the simulation shape 1702. It is a figure which shows the example which produces the evaluation map 1703 based on calculation of a value.
- the evaluation map is used to divide the pattern into a matrix and store evaluation values for each part.
- the evaluation value of each part can be an EPE measurement result belonging to the part or an average value of the EPE measurement result belonging to the part.
- FIG. 20 is a diagram showing an outline of an imaging recipe creation system including an input device 1004 serving as an SEM imaging recipe creation device, a design data storage medium 1002, and a simulator 1003.
- the input device 1004 includes an arithmetic device 2001 and an input unit 2002.
- the visual field position setting unit 2003 included in the arithmetic device 2001 sets the visual field position based on the conditions input from the input unit 2002. For example, as conditions for creating panoramic images of the three patterns 1801 to 1803 illustrated in FIG. 18, the size of the visual field (magnification), the size of the overlapping area, other SEM optical conditions, and the like are input from the input unit 2002. To do.
- FIG. 18 an example in which the visual fields 1804, 1805, 1806, and 1807 are set in order from the right side of the drawing is illustrated, but such an image acquisition order can also be input.
- the dimension between the layout shape 1701 and the simulation shape 1702 is measured for each of a plurality of parts of the pattern.
- the divergence degree distribution creation unit 2005 calculates the degree of divergence between the layout data and the simulation data in a predetermined area unit based on the obtained EPE length measurement result. More specifically, an index value indicating the degree of divergence between them is obtained, such as an EPE value for each part unit, an average value, or a weighted average value for each direction.
- the memory 2009 is used for each part 1704, 1705 of the evaluation map 1703. Register with.
- the vector calculation unit 2006 performs, for example, vector calculation of edges included in the overlapping region 1808 between the visual fields, and calculates the distribution of the horizontal component (x component) and the vertical component (y component). For example, it is calculated how much the x component is included in the edge included in the overlapping region 1808 and how much the y component is included.
- the weighting coefficient calculation unit 2007, the weighting coefficient is set based on the index value obtained by the divergence degree distribution creation unit 2005.
- FIG. 19 is a diagram illustrating an example in which the overlapping region 1808 of the visual fields 1804 and 1805 illustrated in FIG. 18 is evaluated.
- the divergence degree distribution creation unit 2005 sets a weighting coefficient. Specifically, the location where the difference between the simulation data and the layout data is large is considered to be a location where the shape of the actual pattern is not stable and a predetermined edge shape cannot be obtained.
- vector calculation is performed at each part (for example, part 1901) to calculate an index value regarding the abundance of the x-direction component and the y-direction component, and the degree of divergence between the layout data 1904 and the simulation data 1902
- the coefficient of the index value is set according to The greater the degree of deviation, the smaller the weighting factor.
- the visual field position setting unit 2003 determines that the cumulative value of “index value ⁇ weighting coefficient” in the x direction and the y direction of a plurality of parts included in the overlapping area 1808 is a predetermined segment (a line segment sufficient for superposition in both the x direction and the y direction). Is satisfied in the memory 2009 as an image acquisition condition.
- the pattern matching unit 2008 performs pattern matching between layout data and simulation data, edge data based on simulation data and SEM images (for example, contour line data extracted from SEM images), or layout data and edge data based on SEM images. Execute.
- FIG. 21 is a flowchart showing a process of selecting a visual field position for forming a panoramic image.
- the layout data stored in the design data storage medium 1002 and the simulation data created by the simulator 1003 are read out, and pattern matching is executed between them (step 2101).
- dimension measurement EPE measurement
- the divergence situation for each part of the pattern is mapped (step 2103).
- edge vector calculation is performed on the simulation shape, and the x-direction line segment and y-direction line segment distribution are calculated (step 2104).
- a first field of view (field of view 1804 in FIG. 18) is set based on the designated field of view size and area information for panoramic image formation (step 2105).
- FIG. 18 first field of view
- the visual field is positioned in order from the right side of the drawing, and initial conditions are set so that the right end of the visual field 1804 is positioned at a predetermined distance from the right edge of the pattern 1801.
- the overlapping region between the pattern 1801 and the visual field 1804 is set to be the largest under the conditions.
- a second field of view is set (step 2106).
- the second field of view (field of view 1805) is set so that the pattern 1802 can be accommodated in the field of view as much as possible while providing a first region of overlap with the first field of view.
- it is determined whether or not the predetermined line segment information is included in the overlapping area 1808 as described above (step 2107). If it can be determined that the overlapping area 1808 is not included, the size of the overlapping area 1808 is increased. (Step 2108).
- the line segment in the x direction of the overlapping region 1808 is shifted by shifting the visual field 1805 to the right side.
- the lower end portion is included in the overlapping region 1808 more.
- the visual field 1805 may be shifted upward so that the upper end portion of the pattern 1802 is included in the overlapping region 1808.
- the x-direction line segment in the vicinity of the superimposition area is searched so that more line segments in the x direction are included in the superimposition area, and the size of the superimposition area is the smallest among a plurality of options.
- a visual field position is selected. Since the number of acquired images increases as the superimposition area increases, the visual field 1805 is selected so that the superimposition area becomes smaller while including a predetermined line segment in the superimposition area based on the determination criterion as described above.
- an appropriate visual field position can be selected without excessively increasing the size of the superimposed area by alternately performing the shift and the evaluation of the superimposed area.
- a part of the pattern 1802 protrudes from the visual field 1805 due to the movement of the visual field setting position, a new visual field is selected so as to acquire an image of the protruding part.
- the image acquisition conditions are registered in the memory 2009 or the like as a recipe.
- the alignment accuracy may be lowered. This is due to the influence of the quality of the transfer pattern and the stage accuracy of the apparatus when imaging.
- the order of the superimposition processing is important in order to increase the overlay position accuracy.
- the superposition processing is executed in the order of the visual field 1804 ⁇ the visual field 2201 ⁇ the visual field 1805. This order can be obtained by analyzing design data or simulation data and evaluating the ease and reliability of connection between edges.
- the edge included in the overlapping region 1808 is evaluated as described in the previous embodiment, and when it can be determined that the predetermined condition is not satisfied, the field of view 2201 is selectively increased to minimize the necessary minimum. It becomes possible to perform highly accurate synthesis processing with the number of fields of view.
- Electron source 902 Extraction electrode 903
- Electron beam 904 Condenser lens 905
- Objective lens 907 Vacuum chamber 908
- Sample stage 909 Sample 910 Electron 911 Secondary electron 912 Conversion electrode 913 Detector 914 Controller
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Abstract
Description
ステップ1:オーバーレイ測定対象パターンの選択
ステップ2:測定レシピの自動生成
ステップ3:レシピを実行することによって画像を取得
ステップ4:OPE補正の実行
ステップ5:オーバーレイ誤差計測
以下、各ステップについて、図面を用いて詳細に説明する。
(1)オーバーレイ測定対象パターンの選択
まず、このステップでは半導体の設計データ(レイアウトデータ)、或いはシミュレーションデータを用いて、オーバーレイ測定対象パターンの選択を行う。この場合、例えば特定のパターン(拡散層とゲート層のような2層構造からなるトランジスタ等)や、その座標及び画像取得領域(視野)の大きさを、レイアウトデータやシミュレーションデータ上で選択することによって、パターン、或いは評価領域を決定する。入力装置1004は、設計データ記憶媒体1002に記憶されたレイアウトデータやシミュレーションデータのような図形データから所望の測定対象を選択するためのものである。
(2)測定レシピの自動生成
次に、選択パターン、及び評価領域の画像の取得、及び取得画像に基づく測定を実行するためのレシピを自動生成する。設計データには、パターンの座標情報等が記憶されているため、当該座標にSEM等の視野が位置付けられるように、SEMのステージ移動条件、アドレッシングに要するパターンの自動選択、測長ボックスの設定を自動的、或いは半自動的に実行する。アドレッシングパターンは、例えばSEMのビームシフト可能領域内に、測定対象パターンとアドレッシングパターンが位置付けられるように選択する。アドレッシングパターンは、誤検出を防止するため、形状がユニークなものを選択する。
(3)レシピを実行することによって画像を取得
以上のようにして生成されたレシピを用いて、自動測定を行い、オーバーレイ誤差の測定対象であるパターンを含む画像を取得する。取得された画像は後述するようなオーバーレイ誤差測定に供される。
(4)OPE補正の実行
次に、パターン位置補正部1009では、OPEによるシフト分を補正するように、上層パターンの位置をシフトする。具体的には図12に例示するように、データベースに記憶された補正量(x1,y1)と補正方向(θ1)に基づいて、パターンA1202の位置を選択的にシフトさせる。このように補正することによって、オーバーレイ誤差とOPEによるパターンシフトが混在し、オーバーレイの評価を行うことが困難なパターンであっても、適正な評価を行うことが可能となる。なお、実際にシフトさせることなく、演算のみでオーバーレイ誤差を求めることも可能である。なお、SEM画像は輪郭線化されており、当該輪郭線データについて、下層に属する輪郭線は動かすことなく、上層に属する輪郭線を選択的に移動させるようにする。
(5)オーバーレイ誤差計測
オーバーレイ測定部1010では、ステップ4にてOPEによるパターンシフト分が補正されたパターンデータを用いて、オーバーレイ誤差測定を実行する。この場合、図15に例示するように、下層パターンのレイアウトデータのエッジ1501と下層パターンの輪郭線1502との間で位置合わせ(マッチング)を行い、位置合わせが行われた上層パターンのレイアウトデータのエッジ1503の重心位置1506と、上層パターンの輪郭線1504の重心位置1507との間の寸法測定を実行する。下層パターン間の位置合わせは、例えばレイアウトデータと輪郭線との対応点間の距離1505の加算平均値が最小となる位置を探索することによって実行する。図10に例示したブロック図では、マッチング部1007によってレイアウトデータと輪郭線の位置合わせ(マッチング)を行った後で、パターン位置補正部1009によるパターンの位置補正を行っているが、この順番はどちらでも良い。
ステップ1:オーバーレイ対象パターンの決定
ステップ2:対称性パターンの探索
ステップ3:撮像レシピの自動生成
ステップ4:検査及びOPE補正用の画像取得
ステップ5:OPE補正計算処理
ステップ6:オーバーレイ計測
本実施例によれば以下の効果が期待できる。
半導体の設計データ(レイアウトデータ)に基づき、2つのレイヤの重ね合わせ部分の座標とパターン形状を算出する。また、その結果を用いて撮像のためのレシピ情報を自動生成する。
半導体の設計データ(レイアウトデータ)に基づき、上記のオーバーレイ計測パターンに対応した対象性パターンの座標とパターン形状を算出する。また、その結果を用いて撮像のためのレシピ情報を自動生成する。対称パターンの選択は例えば同形状のパターンが所定の間隔より狭い範囲に配列されているか否かの判定に基づいて行うようにしても良いし、上層レイヤの製造の基となっているレイアウトの設計データを用いて対称パターンの抽出を行うようにしても良い。パターン選択部1005では、入力装置1004によって入力された対称パターンの条件に基づいて、その条件に見合ったパターンを選択する。
CD-SEMで取得したSEM画像から輪郭形状を生成し、パターン形状の光近接効果の影響による位置の補正を行う。図7は光近接効果の影響により、対称性パターンが同一量シフトする例を示している。図7に例示するように、対称性パターンは左右に同じ量シフトする。よってOPEの影響を排除するために、設計データ(レイアウトデータ)あるいはシミュレーション形状データから、対称性パターンを構成する2のパターン間の距離(例えば重心点間の距離)Δxdを抽出すると共に、輪郭線データから対称性パターンを構成する2のパターン間の距離Δxcを求め、(Δxc-Δxd)/2を算出する。この算出結果を1のパターンのシフト量として、パターン位置補正部1009は、輪郭線データ内の対称パターンの位置をシフトさせる。
上記で位置の補正を行った2つのレイヤの輪郭線形状データの重ね合わせを行い、オーバーレイ計測を行う。
902 引出電極
903 電子ビーム
904 コンデンサレンズ
905 走査偏向器
906 対物レンズ
907 真空チャンバ
908 試料台
909 試料
910 電子
911 二次電子
912 変換電極
913 検出器
914 制御装置
Claims (10)
- 荷電粒子線装置によって得られた画像に基づいて、試料上に形成されたパターンの測定を行う演算処理装置を備えたオーバーレイ誤差測定装置であって、
前記演算処理装置は、前記荷電粒子線装置によって得られた信号を用いて、異なるレイヤに属する複数のパターン間の寸法を測定すると共に、当該寸法の測定の際に、光近接効果によるパターンのシフト分を補正して前記複数のパターン間の寸法測定を実行することを特徴とするオーバーレイ誤差測定装置。 - 請求項1において、
前記演算処理装置は、前記寸法測定対象パターンとして、対称性パターンを選択することを特徴とするオーバーレイ誤差測定装置。 - 請求項2において、
前記演算処理装置は、前記対称性パターンを構成する2のパターン間の間隔を、当該対称性パターンのレイアウトデータ、或いはシミュレーションデータと同じとなるように補正を行った上で、前記複数のパターン間の寸法測定を実行することを特徴とするオーバーレイ誤差測定装置。 - 請求項2において、
前記演算処理装置は、レイアウトデータ、或いはシミュレーションデータの前記対称性パターンを構成する2つのパターン間の中点と、前記荷電粒子線装置によって得られる信号に基づいて生成される輪郭線データの前記対称性パターンを構成する2つのパターン間の中点との寸法を測定することを特徴とするオーバーレイ誤差測定装置。 - 請求項1において、
前記演算処理装置は、複数の視野を合成したパノラマ画像に基づいて、前記複数のパターン間の寸法測定を実行することを特徴とするオーバーレイ誤差測定装置。 - 請求項5において、
前記演算処理装置は、前記寸法測定対象パターンとして、対称性パターンを選択することを特徴とするオーバーレイ誤差測定装置。 - 請求項6において、
前記演算処理装置は、前記対称性パターンのシフトに応じて前記視野を移動させることを特徴とするオーバーレイ誤差測定装置。 - 請求項7において、
前記演算処理装置は、前記複数の視野間の重畳領域内に所定のエッジが含まれるように前記視野を移動することを特徴とするオーバーレイ誤差測定装置。 - 荷電粒子線装置によって得られた画像に基づいて、試料上に形成されたパターンの測定を、コンピューターに実行させるコンピュータープログラムであって、
当該コンピュータープログラムは、前記コンピューターに、前記荷電粒子線装置によって得られた信号を用いて、異なるレイヤに属する複数のパターン間の寸法を測定させると共に、当該寸法の測定の際に、光近接効果によるパターンのシフト分を補正させて前記複数のパターン間の寸法測定を実行させることを特徴とするコンピュータープログラム。 - 請求項9において、
前記コンピュータープログラムは、前記コンピューターに前記寸法測定対象パターンとして、対称性パターンを選択させることを特徴とするコンピュータープログラム。
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