WO2013157286A1 - 超電導成膜用基材及び超電導線並びに超電導線の製造方法 - Google Patents
超電導成膜用基材及び超電導線並びに超電導線の製造方法 Download PDFInfo
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- WO2013157286A1 WO2013157286A1 PCT/JP2013/052755 JP2013052755W WO2013157286A1 WO 2013157286 A1 WO2013157286 A1 WO 2013157286A1 JP 2013052755 W JP2013052755 W JP 2013052755W WO 2013157286 A1 WO2013157286 A1 WO 2013157286A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/04—Single wire
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/30—Drying; Impregnating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24488—Differential nonuniformity at margin
Definitions
- the present invention relates to a substrate for superconducting film formation, a superconducting wire, and a method for manufacturing the superconducting wire.
- a superconducting wire manufacturing method for obtaining a superconducting wire by forming a superconducting layer on a film forming surface of a superconducting film forming substrate having a tape shape and a rectangular tape section is known.
- Japanese Patent Application Laid-Open No. 2011-165568 discloses a superconducting wire in which a first intermediate layer and a second intermediate layer are sequentially laminated on a film formation surface of a superconducting film forming base material.
- a superconducting wire in which the second intermediate layer extends to the side surface of the first intermediate layer and the side surface of the tape-shaped metal substrate is disclosed.
- Japanese Patent Application Laid-Open No. 2004-31128 does not deal with peeling of the intermediate layer or the superconducting layer, but the film-forming surface is directed from the edge of the back surface opposite to the film-forming surface toward the edge of the film-forming surface.
- a substrate for superconducting film formation in which an R-plane extending in an R shape (round shape) is formed outward in the in-plane direction.
- the present invention has been made in view of the above facts, and a superconducting layer can be reliably formed on the side surface, and the superconducting film-forming substrate, the superconducting wire, and the superconducting material can be prevented from being peeled off. It aims at providing the manufacturing method of a wire.
- ⁇ 3> The substrate for superconducting film formation according to ⁇ 2>, wherein the spread surface has a surface roughness of 15 nm or more.
- the ratio of the spread distance in the in-plane direction of the film formation surface in the pair of spread surfaces to the maximum distance between the pair of side surfaces is 0.005% or more and 7.59% or less, respectively.
- ⁇ 1>- ⁇ 3> The substrate for superconducting film formation according to any one of ⁇ 3>.
- ⁇ 5> A tape-shaped base body and a metal layer that covers at least both side surfaces of the base body and has a higher malleability than the base body, and the pair of side surfaces are formed on the metal layer.
- ⁇ 6> The superconducting film-forming substrate according to any one of ⁇ 1> to ⁇ 5>, wherein the pair of side surfaces includes an anchor portion that is recessed along the longitudinal direction of the superconducting film-forming substrate.
- a spreading surface extending from an edge of the film-forming surface is defined as a first spreading surface, and the pair of side surfaces are further within the surface of the film-forming surface from the edge of the back surface toward the first spreading surface.
- ⁇ 8> The superconducting film-forming substrate according to any one of ⁇ 1> to ⁇ 7>, wherein the pair of side surfaces further includes a vertical surface that extends from the spreading surface and is perpendicular to the back surface.
- the superconducting film-forming substrate according to any one of ⁇ 1> to ⁇ 8>, the film-forming surface of the superconducting film-forming substrate, and at least the spreading surface of the pair of side surfaces A superconducting wire having a laminated intermediate layer and a superconducting layer laminated on a surface of the intermediate layer.
- the superconducting layer usually includes a superconducting portion mainly composed of an oxide superconductor which is located on the film formation surface and serves as a superconducting phase, and an oxide superconductor which is located on the spreading surface side and serves as a normal conducting phase.
- a processing step of forming a spreading surface that spreads outward in the in-plane direction of the surface; and after the processing step, an intermediate layer on at least the spreading surface of the superconducting film-forming substrate and the pair of side surfaces A method for producing a superconducting wire, comprising: an intermediate layer forming step for forming a film; and a superconducting layer forming step for forming a superconducting layer on the surface of the intermediate layer.
- the processing step includes a coating step in which a pair of side surfaces of a tape-shaped base body is covered with a metal layer having higher malleability than the base body to obtain the base material for superconducting film formation.
- the method for producing a superconducting wire according to ⁇ 12> wherein the metal layer of the obtained superconducting film-forming substrate is processed to form spread surfaces on the pair of side surfaces, respectively.
- the method includes a step of heat-treating the superconducting layer portion located on the spreading surface side to make the superconducting layer portion located on the spreading surface side non-superconducting.
- ⁇ 12> or ⁇ 13> The manufacturing method of the superconducting wire as described in 13>.
- a superconducting film-forming substrate a superconducting wire, and a superconducting wire manufacturing method capable of reliably forming a superconducting layer on the side surface and suppressing peeling of the formed layer. Can do.
- FIG. 1 is a perspective view of a superconducting wire including a superconducting film forming substrate according to a first embodiment of the present invention.
- FIG. 2 is a process diagram of the method of manufacturing a superconducting wire according to the first embodiment of the present invention.
- FIG. 3 is a view of the superconducting wire according to the second embodiment of the present invention as viewed from the end surface direction.
- FIG. 4 is a view of the superconducting wire according to the third embodiment of the present invention as viewed from the end surface direction.
- FIG. 5A is a diagram showing a modification of the shape of a pair of side surfaces of a substrate for superconducting film formation.
- FIG. 5B is a diagram showing a modification of the shape of a pair of side surfaces of the superconducting film-forming substrate.
- FIG. 5C is a diagram showing a modification of the shape of a pair of side surfaces of the substrate for superconducting film formation.
- FIG. 5D is a diagram showing a modification of the shape of a pair of side surfaces of the substrate for superconducting film formation.
- FIG. 6A is a diagram showing a modified example of a laminated structure of a laminated body including a superconducting layer.
- FIG. 6B is a diagram showing a modification of the laminated structure of the laminated body including the superconducting layer.
- FIG. 1 is a perspective view of a superconducting wire including a superconducting film forming substrate according to a first embodiment of the present invention.
- the superconducting wire 20 has an intermediate layer 30, a superconducting layer 40, and a stabilization layer on one main surface in the thickness direction T of the superconducting film-forming substrate 10 (hereinafter referred to as a film-forming surface 10 ⁇ / b> A).
- 50 has a laminated structure laminated in this order.
- Superconducting film-forming substrate 10 is in the form of a tape extending in the direction of arrow L (hereinafter referred to as longitudinal direction L) in the figure.
- a low magnetic metal substrate or ceramic substrate is used as the material of the metal substrate.
- a metal such as Co, Cu, Cr, Ni, Ti, Mo, Nb, Ta, W, Mn, Fe, and Ag, which is excellent in strength and heat resistance, or an alloy thereof is used. .
- Ni-based alloys such as Hastelloy (registered trademark) and Inconel (registered trademark)
- Fe-based alloys such as stainless steel.
- Various ceramics may be arranged on these various metal materials.
- a material of the ceramic substrate for example, MgO, SrTiO 3 , yttrium stabilized zirconia, or the like is used as a material of the ceramic substrate.
- the superconducting film forming substrate 10 includes a film forming surface 10A for forming a laminate including the superconducting layer 40, a back surface 10B opposite to the film forming surface 10A, and a film forming surface 10A and a back surface. It has a pair of end faces 10C and 10D that are connected to 10B.
- the film formation surface 10A is a substantially smooth surface.
- the surface roughness of the film formation surface 10A is preferably 10 nm or less. This is because it is possible to increase the degree of orientation of the superconducting layer portion 40A located (deposited) on the film forming surface 10A, thereby enhancing the superconducting characteristics of the superconducting wire 20.
- the surface roughness of the film formation surface 10A is set to 1 nm or less and 0.01 nm or more in order to further increase the degree of orientation of the superconducting layer 40 and clarify the difference from the spread surface 12 described later. More preferred.
- the surface roughness is the arithmetic average roughness Ra in the “amplitude average parameter in the height direction” of the surface roughness parameter defined in JISB-0601-2001.
- the superconducting film-forming substrate 10 has a pair of side surfaces 10E and 10F connected to the film-forming surface 10A, the back surface 10B, and the pair of end surfaces 10C and 10D.
- Each of the pair of side surfaces 10E and 10F is located outside the in-plane direction P (or the width direction of the substrate) of the film-forming surface 10A from the edge of the film-forming surface 10A toward the back surface 10B (hereinafter referred to as the in-plane direction P outside). And includes a spread surface 12 that extends in the width direction of the substrate.
- the spreading surface 12 points to both the pair of side surfaces 10E and 10F, and the film-forming surface 10A
- the inner angle is an inclined surface larger than 90 degrees and smaller than 180 degrees.
- the shape of the pair of end faces 10C and 10D is a trapezoidal shape with the film forming surface 10A being the upper base and the back surface 10B being the lower bottom.
- the inner angle formed by the film formation surface 10A and the spread surface 12 is preferably 95 degrees or more from the viewpoint that the intermediate layer 30 and the like can be easily formed on the spread surface 12. Moreover, it is preferable that the said internal angle is 110 degree
- the surface roughness of the spreading surface 12 is set so that the degree of crystal orientation of the superconducting layer portion 40B located on (deposited on) the spreading surface 12 is lower than that of the superconducting layer portion 40B. From the viewpoint of non-orienting the crystal and generating an anchor effect, it is preferably rougher than the surface roughness of the film formation surface 10A.
- the surface roughness of the spreading surface 12 is preferably 15 nm or more, and as described above, the surface roughness of the film formation surface 10A is preferably 10 nm or less.
- the surface roughness of the spreading surface 12 is less than 15 nm, the crystal of the superconducting layer portion 40B located on the spreading surface 12 is oriented and the superconducting layer portion 40B becomes superconducting, which becomes a starting point of a current path and a thermal instability factor. . Therefore, by setting the surface roughness of the spreading surface 12 to 15 nm or more, crystal growth of the superconducting layer portion 40B located on the spreading surface 12 can be made irregular, and the superconducting layer portion 40B can be made normal conducting. In other words, when the surface roughness of the spread surface 12 is 15 nm or more, the superconducting layer portion 40B located on the spread surface 12 becomes normal conducting and the critical current value Ic can be improved. “Normal conduction” is also described as “normal conduction”, and is to prevent a superconducting phenomenon from occurring even when the superconductor is cooled to an extremely low temperature.
- the surface roughness of the spreading surface 12 makes clear the difference from the surface roughness of the film formation surface 10A, and the superconducting layer portion located on the normal conducting superconducting layer portion 40B and the film formation surface 10A maintaining the superconducting state. It is more preferably 20 nm or more from the viewpoint of delimiting 40A continuity. Furthermore, the surface roughness of the spreading surface 12 is determined by the remaining polishing abrasive grains at the time of manufacturing, and the scattering of fine particles due to contact between the spreading surface 12 and the susceptor, guide roll, and guide pulley used during manufacturing. From the viewpoint of suppressing 10A from being contaminated (subject to indirect surface scratches), it is preferably 500 nm or less. The surface roughness described above is preferably applied not only to the spread surface 12 but also to the pair of side surfaces 10E and 10F including the spread surface 12.
- the ratio ⁇ (D2 / D1) ⁇ D2 (that is, the distance in the in-plane direction P of the film forming surface between the film forming surface side end and the back surface side end of the spreading surface, also referred to as the shoulder distance) 100 ⁇ is preferably 0.005% or more and 7.59% or less, respectively.
- the separation characteristic specifically, the characteristic that it is difficult to separate after film formation on the spread surface 12
- the superconducting characteristic specifically This is because the critical current characteristic is also improved.
- the ratio of the spread distance D2 to the maximum distance D1 is preferably 0.018% or more and 5.00% or less. It is because peeling can be effectively suppressed within the evaluation sample length of 1 m when the ratio is within the numerical range.
- the ratio of the spread distance D2 to the maximum distance D1 is preferably 0.15% or more and 1.00% or less.
- the above superconducting film-forming substrate 10 may be composed of a single component and / or member, or may be composed of a plurality of components and / or members.
- a material used for the superconducting film-forming substrate 10 is formed in a central shape of the superconducting film-forming substrate 10 in a tape shape and has a rectangular sectional view when cut in the thickness direction.
- the base material body 14 made of the material described above and the metal layer 16 that covers at least both side surfaces of the base material body 14 and has higher malleability than the base material body 14 may be provided.
- the pair of side surfaces 10F and 10E are formed on the metal layer 16, but the metal layer 16 is more malleable than the base body 14, and thus is easily formed.
- the mechanical strength of the superconducting film-forming substrate 10 is reduced by the amount of the base body 14 having low malleability as compared with the case where the malleability of the entire superconducting film-forming substrate 10 is increased. Can be suppressed.
- Examples of the material of the metal layer 16 include metals containing at least one of Ag, Cu, Ni, Cr, Mo, W, V, Au, Sn, Al, and P. Moreover, it is preferable that the metal layer 16 has malleability of elongation of 2% or more from the viewpoint of easy molding.
- an intermediate layer 30 is laminated on the film forming surface 10 ⁇ / b> A and the spreading surface 12 of the superconducting film forming substrate 10.
- the intermediate layer 30 is a layer for realizing, for example, high biaxial orientation in the superconducting layer 40.
- Such an intermediate layer 30 has, for example, physical values such as a coefficient of thermal expansion and a lattice constant that are intermediate values between the superconducting film-forming substrate 10 and the superconductor constituting the superconducting layer 40.
- the intermediate layer 30 may have a single layer structure or a multilayer structure.
- a bed layer containing amorphous Gd 2 Zr 2 O 7- ⁇ ( ⁇ is an oxygen non-stoichiometric amount) and the like, and IBAD containing crystalline MgO and the like is a structure in which a forced alignment layer formed by an Ion Beam Assisted Deposition method, an LMO layer containing LaMnO 3 + ⁇ ( ⁇ is an oxygen non-stoichiometric amount), and a cap layer containing CeO 2 or the like are sequentially laminated. Also good.
- a superconducting layer 40 is laminated on the surface of the intermediate layer 30.
- the superconducting layer 40 preferably contains an oxide superconductor, particularly a copper oxide superconductor.
- an oxide superconductor particularly a copper oxide superconductor.
- REBa 2 Cu 3 O 7- ⁇ hereinafter referred to as RE superconductor
- the RE in the RE-based superconductor is a single rare earth element or a plurality of rare earth elements such as Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu. Y is preferable because it is difficult to cause substitution with the Ba site.
- ⁇ is an oxygen non-stoichiometric amount and is, for example, 0 or more and 1 or less, and is preferably closer to 0 from the viewpoint that the superconducting transition temperature is high.
- the oxygen non-stoichiometric amount may be less than 0, that is, take a negative value when high-pressure oxygen annealing or the like is performed using an apparatus such as an autoclave.
- the superconducting layer portion 40A on the film forming surface 10A is a superconducting portion mainly composed of the oxide superconductor that becomes the superconducting phase, and the superconducting layer portion 40B on the spreading surface 12 becomes the normal conducting phase. It is preferable to be a normal conducting part including an oxide superconductor. This is because by making the superconducting layer portion 40B a normal conducting portion, it is possible to suppress the superconducting layer portion 40B from becoming an origin of an unnecessary current path or a thermal instability factor.
- the surface roughness of the superconducting layer portion 40B is preliminarily shaped to 15 nm or more and 500 nm or less, the crystal orientation of each layer constituting the intermediate layer 30 becomes nonuniform, and the orientation of the intermediate layer 30 varies.
- the intermediate layer 30 has a forced alignment layer formed by the IBAD method, the irradiation direction of the IBAD method is such that the film forming surface 10A of the superconducting film forming substrate 10 is appropriately irradiated. Since the angle is adjusted at an arbitrary angle, the irradiation angle with respect to the pair of side surfaces 10E and 10F deviates from an appropriate angle for film formation, and the film formation state of the intermediate layer 30 becomes uneven.
- the superconducting layer portion 40A located on the film forming surface 10A and the superconducting layer portion 40B located on the spreading surface 12 are controlled to have different properties (superconducting portion and normal conducting portion).
- the “main body” described above and hereinafter represents the component contained in the largest amount among the constituent components constituting a certain layer or certain portion.
- a certain layer or a certain part may consist only of components.
- the oxide superconductor serving as the normal conducting phase inevitably has a lower degree of crystal orientation than the oxide superconductor serving as the superconducting phase.
- a normal conducting part contains at least any one part among the composition of the base material 10 for superconducting film-forming, and the composition of the intermediate
- the superconducting layer 40 extends from the intermediate layer 30 and extends outward in the in-plane directions of the surfaces 10E and 10F, and covers the end surface (the tip in FIG. 1) of the intermediate layer 30. It is preferable. Thereby, peeling of the intermediate layer 30 can be further suppressed.
- the intermediate layer 30 has a multilayer structure, it is preferable that the intermediate layer on the superconducting layer 40 side covers the end face of the intermediate layer on the superconducting film forming substrate 10 side, as with the superconducting layer 40.
- the stabilization layer 50 covers the surface of the superconducting layer 40.
- the stabilization layer 50 preferably covers the end surface (the front end in FIG. 1) of the superconducting layer 40, similarly to the superconducting layer 40, and the superconducting film-forming substrate 10, the intermediate layer 30, and the superconducting layer 40 are covered. More preferably, the entire periphery is covered.
- the stabilization layer 50 may have a single layer structure or a multilayer structure. In the case of a multilayer structure, the number and types of the layers are not limited, but a silver stabilization layer made of silver and a copper stabilization layer made of copper may be laminated in order.
- stacked on the spreading surface 12 in embodiment described above is laminated
- FIG. 2 is a process diagram of the method for manufacturing the superconducting wire 20 according to the first embodiment of the present invention.
- the following parentheses are step identification codes in the figure.
- a processing step of processing a superconducting film-forming substrate having a tape shape and a rectangular tape cross-section having end faces 10C and 10D and a pair of side surfaces 10F and 10E connected to the film forming surface 10A and the back surface 10B is performed.
- This processing process includes processes from step S11 to step S18, but at least the side surface forming process of step S16 can be omitted.
- the superconducting film-forming substrate is roll-rolled, and further slitted with a finished size to obtain a superconducting film-forming substrate having a predetermined thickness and width.
- the abrasive grains are preferably diamond grains or oxide grains, particularly aluminum oxide, cerium oxide, zirconium oxide, iron oxide and the like.
- the polishing liquid may be water, a surfactant, oils, organic solvents or a mixture thereof, or a solution in which water is mixed with an acid such as formic acid, acetic acid or nitric acid, or water is mixed with an alkali such as sodium hydroxide. In particular, soapy water is desirable. Grinding stone polishing can also be used. In this case, polishing molding in which the shape of the side surface is approximately approximate to the final shape is also possible.
- the polishing liquid is a chemical solvent that chemically reacts with the surface of the substrate for superconducting film formation.
- a solution obtained by mixing a liquid such as acetic acid or a mixture thereof and further an accelerator such as saturated alcohol or sulfonic acid into the mixture is desirable.
- the abrasive grains may be the above mechanical abrasive grains, and a polishing solvent (slurry) containing a chemical polishing solution is used there.
- a superconducting film-forming substrate is immersed in an electrolytic solution, and the superconducting film-forming substrate is energized with the anode as an anode, and the surface of the superconducting film-forming substrate is polished by an electrolytic reaction.
- This electrolytic solution may be an acid or an alkali, and nitric acid, phosphoric acid, chromic acid, hydrogen peroxide, potassium hydroxide, potassium cyanide and the like are particularly desirable.
- angular part can be made into a predetermined shape by using the combination roll of a forming roll and a flat roll structure.
- the forming roll is used for forming the side surface and the corner on the film forming surface side
- the flat roll is used for forming an uneven shape near the corner of the wide surface (film forming surface) whose shape has been changed by the forming roll.
- the forming roll is a groove type, and may have an integrated or divided structure. It is also possible to form the spread surface 12 into a predetermined shape by combining a pair of forming rolls and flat rolls as a pair and combining a plurality of pair rolls in tandem.
- a pair of side surfaces of a substrate for superconducting film formation (here, referred to as a substrate body 14) is covered with a metal layer 16 having a higher malleability than the substrate body for superconducting film formation.
- a covering step for obtaining a base material may be included, the metal layer 16 of the obtained superconducting film forming base material may be processed, and the spread surfaces 12 may be respectively formed on the pair of side surfaces.
- dry plating or wet plating can be used.
- the side surface and the side corners of the superconducting film-forming substrate are formed by polishing to a shape approximating the final shape, and then the metal layer 16 is coated on the side surfaces and corners to form the final shape. Is also possible.
- the above steps S15 and S16 are continuous lines, and can be performed simultaneously, which is effective for cost reduction.
- the film-side surface is polished by precision polishing.
- This precision polishing may be any method of electrolytic polishing, mechanical polishing, and chemical polishing.
- there are no protrusions on the side and corners before precision polishing, and the smooth slope reduces damage to the polishing line and polishing cloth and reduces electric field concentration, improving the uniformity of polishing and precision polishing costs. There is a reduction effect.
- the superconducting film-forming substrate 10 according to the first embodiment is obtained. Of the above S11 to S18, processes other than S16 can be omitted.
- an intermediate layer film forming step for forming the intermediate layer 30 on the film forming surface 10A side of the superconducting film forming substrate 10 is performed.
- the intermediate layer 30 is not only formed on the film forming surface 10A of the superconducting film forming substrate 10 having high flatness formed by precision polishing, but also on the pair of side surfaces 10E and 10F. Form a film.
- the pair of side surfaces 10E and 10F is formed with a spreading surface 12 that spreads outward in the in-plane direction P of the film formation surface 10A from the edge of the film formation surface 10A toward the back surface 10B side.
- the intermediate layer 30 can also be reliably formed on the side surfaces 10E and 10F. Examples of the method for forming the intermediate layer 30 include a sputtering method and an IBAD method.
- a superconducting layer forming step for forming the superconducting layer 40 on the surface of the intermediate layer 30 is performed.
- the pair of side surfaces 10E and 10F is formed with a spreading surface 12 that spreads outward in the in-plane direction P of the film formation surface 10A from the edge of the film formation surface 10A toward the back surface 10B side.
- the superconducting layer 40 can be reliably formed on the side surfaces 10E and 10F.
- Examples of a method for forming (depositing) the superconducting layer 40 include a TFA-MOD method, a PLD method, a CVD method, an MOCVD method, and a sputtering method.
- superconductivity is performed so as to cover the corner (end) of the intermediate layer 30 by irradiating and depositing target particles in a range wider than the width of the intermediate layer 30 from the normal direction of the surface of the intermediate layer 30.
- Layer 40 can be deposited. Note that the superconducting layer 40 can be more reliably formed on the end face of the intermediate layer 30 by adjusting the irradiation angle with respect to the surface of the intermediate layer 30 to a position where the angle is increased or decreased in the width direction with respect to the normal direction. it can.
- the superconducting layer portion 40B formed on the spreading surface 12 is locally heat-treated by laser irradiation, partial annealing or the like to forcibly diffuse the layers and the substrate for superconducting film formation.
- the superconducting layer portion 40B can be made non-superconducting, that is, the superconducting layer portion 40B can be made normal conducting, and the adhesion between the superconducting layer portion 40B and the intermediate layer 30 can be increased, and peeling can be further suppressed. Because.
- a stabilization layer forming step for forming the stabilization layer 50 on at least the surface of the superconducting layer 40 is performed.
- a method for forming (depositing) the stabilization layer 50 for example, a sputtering method can be used. In this sputtering method, similarly to the formation of the superconducting layer 40, the target particles are irradiated and deposited in a range wider than the width of the superconducting layer 40 from the normal direction of the surface of the superconducting layer 40, or the angle is increased or decreased in the width direction. It can be adjusted to the position.
- the superconducting wire 20 according to the first embodiment of the present invention can be obtained. Since this superconducting wire 20 has the intermediate layer 30 and the superconducting layer 40 (laminated body) not only on the film forming surface 10A but also on the spreading surface 12, it is a laminated body as compared with the case where there is a laminated body only on the film forming surface 10A. Peeling can be suppressed.
- FIG. 3 is a view of the superconducting wire 120 according to the second embodiment of the present invention as viewed from the end surface direction.
- the superconducting wire 120 has a laminated structure in which the intermediate layer 30, the superconducting layer 40, and the stabilizing layer 50 are laminated in this order on the film forming surface 110A of the superconducting film forming substrate 110.
- the superconducting film forming substrate 110 includes a film forming surface 110A for forming a laminate including the superconducting layer 40, a back surface 110B opposite to the film forming surface 110A, and a film forming surface 110A.
- a pair of end surfaces (only one end surface 110C is shown in the drawing) connected to the back surface 110B, a pair of side surfaces 110E and the film forming surface 110A, the back surface 110B, and a pair of end surfaces (only one end surface 110C is shown in the drawing) 110F.
- Each of the pair of side surfaces 110E and 110F has a spreading surface 112 that spreads outward in the in-plane direction P (or the width direction of the substrate) of the film formation surface 110A from the edge of the film formation surface 110A toward the back surface 110B. It includes an orthogonal surface 114 that extends from the spreading surface 112 and is orthogonal to the back surface 110B.
- the spreading surface 112 refers to a portion in which the film formation surface side edges of the pair of side surfaces 110E and 110F have an R shape.
- the spreading surface 112 can be configured similarly to the spreading surface 12.
- the expansion distance D2 of the pair of expansion surfaces 112 in the in-plane direction P of the film formation surface A is 0.005%, respectively. It is preferable that it is 7.59% or less.
- the ratio of the spread distance D2 to the maximum distance D1 is preferably 0.018% or more and 5.00% or less. Furthermore, the ratio of the spread distance D2 to the maximum distance D1 is preferably 0.15% or more and 1.00% or less.
- the intermediate layer 30 and the superconducting layer 40 are reliably formed on the pair of side surfaces 110E and 110F by the presence of the R-shaped spreading surface 112. A film can be formed, and peeling of these can be suppressed.
- the superconducting film forming substrate 110 includes the orthogonal surface 114, the entire width of the superconducting film forming substrate 110 can be reduced while securing the film forming surface 110A as compared with the first embodiment. Can do.
- the laminated body such as the intermediate layer 3 may be laminated not only on the spreading surface 112 but also on the orthogonal surface 114.
- FIG. 4 is a view of the superconducting wire 220 according to the third embodiment of the present invention as viewed from the end surface direction.
- the superconducting wire 220 has an intermediate layer 30, a superconducting layer 40, and two stabilization layers 50 (the first stabilization layer 52 as the first layer, and the second layer as the second layer) on the deposition surface 210 A of the superconducting film-forming substrate 210.
- a second stabilizing layer 54 is sequentially laminated.
- the first stabilization layer 52 covers a part of the periphery of the superconducting film forming substrate 210
- the second stabilizing layer 54 is surrounded by the superconducting film forming substrate 210. Although the whole is covered, the entire periphery of the superconducting film-forming substrate 210 may be covered together.
- the superconducting film-forming substrate 210 includes a film forming surface 210A for forming a laminate including the superconducting layer 40, a back surface 210B that is the surface opposite to the film forming surface 210A, and a film forming surface 210A. It has a pair of end surfaces (only one end surface 210C is shown in the drawing) that is continuous with the back surface 210B, and a pair of side surfaces 210E and 210F that are continuous with the film forming surface 210A, the back surface 210B, and the pair of end surfaces 210C.
- Each of the pair of side surfaces 210E and 210F has a first spreading surface 212 that spreads outward in the in-plane direction P (or the width direction of the substrate) of the film formation surface 210A from the edge of the film formation surface 210A toward the back surface 210B. And a second spreading surface 214 that spreads outside the back surface 210B in the in-plane direction P of the film-forming surface 210A from the edge of the back surface 210B toward the first spreading surface 212 side.
- both the first spreading surface 212 and the second spreading surface 214 are continuous in an R shape. That is, the shape of the pair of side surfaces 210E and 210F is an arc shape.
- first spreading surface 212 and the second spreading surface 214 can be configured similarly to the spreading surface 12.
- the pair of first spread surfaces 212 has a spread distance D2 in the in-plane direction P of the film formation surface (that is, the film formation surface side of the first spread surface).
- the ratio ⁇ (D2 / D1) ⁇ 100 ⁇ of the distance in the in-plane direction P of the film formation surface between the end and the back side end is preferably 0.005% or more and 7.59% or less, respectively.
- the ratio of the spread distance D2 to the maximum distance D1 is preferably 0.018% or more and 5.00% or less.
- the ratio of the spread distance D2 to the maximum distance D1 is preferably 0.15% or more and 1.00% or less.
- the intermediate layer 30 and the superconducting layer 40 can be reliably provided on the pair of side surfaces 210E and 210F by the R-shaped first spreading surface 212. It is possible to form a film, and to suppress such peeling.
- the R-shaped second spreading surface 214 is present, the second stabilization layer 54 covering the entire periphery of the superconducting film-forming substrate 210 can be more reliably deposited on the vicinity of the edge of the back surface 210B.
- the shape of the pair of side surfaces of the substrate for superconducting film formation is not particularly limited as long as there is a spread surface, and may be a shape as shown in FIGS. 5A to 5D.
- the superconducting film-forming substrate 310 shown in FIG. 5A has a film-forming surface 310A, a back surface 310B, and a pair of side surfaces 310E and 310F.
- Each of the pair of side surfaces 310E and 310F has a spread surface 312 and a spread surface inclined outward in the in-plane direction (or the width direction of the substrate) of the film formation surface from the edge of the film formation surface 310A toward the back surface 310B. It has an orthogonal surface 314 that continues to 312 and the back surface 310B and is orthogonal to the back surface 310B.
- the superconducting film-forming substrate 410 shown in FIG. 5B has a film-forming surface 410A, a back surface 410B, and a pair of side surfaces 410E and 410F.
- Each of the pair of side surfaces 410E and 410F includes a first spreading surface 412 inclined outward in the in-plane direction (or the width direction of the substrate) of the film formation surface 410A from the film formation surface 410A toward the back surface 410B.
- a superconducting film-forming substrate 510 shown in FIG. 5C has a film-forming surface 510A, a back surface 510B, and a pair of side surfaces 510E and 510F.
- Each of the pair of side surfaces 510E and 510F has a first spreading surface 512 inclined outward in the in-plane direction (or the width direction of the substrate) of the film formation surface 510A from the edge of the film formation surface 510A toward the back surface 510B side,
- the first spread surface 512 and the back surface 510B are connected to each other, and the second spread surface 514 is inclined outward in the in-plane direction of the film formation surface 510A from the edge of the back surface 510B toward the film formation surface 510A.
- a superconducting film-forming substrate 610 shown in FIG. 5D has a film-forming surface 610A, a back surface 610B, and a pair of side surfaces 610E and 610F.
- Each of the pair of side surfaces 610E and 610F includes a first spreading surface 612 that spreads in an R shape from the film formation surface 610A, and an in-plane direction of the film formation surface 610A that is connected to the first spread surface 612 (or the width direction of the base material).
- an inclined portion 614 and an inclined surface 616 form an anchor portion 620 whose side surface center portion is recessed in the longitudinal direction L (see FIG. 1).
- the laminated body including the superconducting layer 40 is configured to cover the lower end surface, it may be configured not to cover the lower end surface as shown in FIG. 6A. Further, as shown in FIG. 6B, only the stabilization layer 50 may cover the end surfaces of the superconducting layer 40 and the intermediate layer 30.
- the intermediate layer 30 or the stabilization layer 50 may be omitted.
- Example 1 The substrate for superconducting film formation and the superconducting wire according to Example 1 were produced as follows. First, both surfaces of a Hastelloy material 0.3 mmt ⁇ 75 mm width ⁇ 350 m (BA (bright annealing) material: surface roughness about Ra 50 nm) were mechanically polished to modify the surface roughness Ra to about 30 nm. Next, using this tape base material, a tape base material of 0.1 mmt ⁇ 75 mm width ⁇ 1050 m was manufactured with a 12-high rolling mill having a roll diameter of ⁇ 20 mm. The surface roughness of the front and back surfaces of the final tape substrate finished by rolling was mirror finished with an Ra of about 9 nm.
- BA blue annealing
- a tension of 6 kgf / mm 2 was applied under a holding condition of 790 ° C. for 20 seconds, and heat treatment was performed in an atmosphere of a mixed gas of argon gas and hydrogen (TA (tension annealing). )processing).
- TA tension annealing
- the tape base material was roll-rolled, and further slitted at a finished size to finish a tape having a thickness of 100 ⁇ m, a width of 10 mm ⁇ 1050 m ⁇ 6.
- the processing rate in the rolling process secured 60% or more.
- the slits at this time were performed in a direction in which the slit surfaces were unified so that the surface during rolling was the surface of all six strips having a width of 10 mm after slitting.
- the exit side direction of the burrs generated by the slit can be unified to the back side direction having a width of 10 mm, so that the shape controllability of the side surface is high and significant.
- Side surface molding is possible even with the slit method in which burrs appear in alternating directions, but the work may be complicated, for example, by reversing the front and back.
- the side surfaces and corners of the superconducting layer film-forming substrate obtained by slitting are polished by mechanical polishing, and cutting marks, shear marks, etc. scattered on the side surfaces and corner parts are removed by polishing, and the side surfaces are removed.
- the Ra of the part was finished to about 50 nm. Polishing was performed by polishing a (# 600) grindstone.
- the pair of side surfaces of the superconducting layer film-forming substrate each include a spread surface extending outward in the in-plane direction of the film-forming surface from the edge of the film-forming surface (front surface) toward the back surface side.
- a pair of side surfaces was molded with a combination roll of a pair of upper and lower flat rolls.
- the spreading surface was formed into an R shape, and the entire side surface was formed into a U shape as shown in FIG.
- the linearity of the superconducting layer film-forming substrate having a side shape formed by a forming roll and a flat roll was changed. Therefore, the TA treatment was performed again in order to restore the flatness of the superconducting layer film-forming substrate.
- heat treatment was performed in an atmosphere of a mixed gas of argon gas and hydrogen under the condition of holding at 650 ° C., which is slightly lower than the first temperature, for 30 seconds and under the condition of applying a tension of 4 kgf / mm 2 .
- the spread distance D2 of one spread surface in the in-plane direction P (or the width direction of the substrate) of the film formation surface (that is, the film formation surface of the spread surface)
- Example 1 an intermediate layer was formed on the surface (film-forming surface) and the spreading surface of the superconducting film-forming substrate according to Example 1.
- an amorphous Gd 2 Zr 2 O 7- ⁇ ( ⁇ is an oxygen non-stoichiometric amount) layer (bed layer) by a sputtering method and a crystalline MgO layer (forced) by an IBAD method are used as an intermediate layer.
- An alignment layer), a LaMnO 3 + ⁇ layer (LMO layer) by a sputtering method, and a CeO 2 layer (cap layer) by a sputtering method were sequentially formed.
- the intermediate layer was laminated along the rounded R shape.
- the total thickness of the intermediate layer was 0.6 ⁇ mt. Details of the film forming conditions are omitted.
- a YBa 2 Cu 3 O 7- ⁇ layer having a thickness of about 1 ⁇ mt was formed as a superconducting layer using a PLD method so as to cover the intermediate layer.
- a silver stabilization layer was formed by vapor-depositing silver having a thickness of about 10 ⁇ mt using a high-frequency sputtering device so as to cover the superconducting layer. Thereafter, oxygen annealing was performed at 550 ° C. in an oxygen atmosphere.
- a copper stabilization layer having a thickness of about 40 ⁇ mt was formed by plating on the entire periphery of the superconducting film forming substrate having the silver stabilization layer.
- Example 2 0.010%, Example 3: 0.018%, Example 4: 0.044%, Example 5: 0.10%, Example 6: 0.150%, Example 7: 0 176%, Example 8: 0.466%, Example 9: 0.50%, Example 10: 1.00%, Example 11: 1.43%, Example 12: 2.14% Example 13: 5.00%, Example 14: 5.61%, Example 15: 7.59%, Example 16: 11.43%, Example 17: 28.64%, Example 18: 47. 74%, Example 19: 49.95%.
- Comparative Example 1 a substrate for superconducting film formation and a superconducting wire according to Comparative Example 1 were produced in the same manner as in Example 1. However, the side molding of S16 shown in FIG. 2 was not performed. Therefore, the shoulder distance ratio is 0%.
- Tables 1 and 2 below show the evaluation results of the superconducting properties and the peeling properties when the shoulder distance ratio is changed.
- the absolute value of the shoulder distance is shown together with the ratio of the shoulder distance.
- the superconducting characteristic A is a superconducting characteristic in which the critical current value exceeds 300 A in all measurement points and the difference between the maximum value and the minimum value is within a variation range of 10 A or less.
- B of the superconducting characteristic indicates that the superconducting characteristic has been confirmed that the critical current value exceeds 250A in the range of all measurement points, and the difference between the maximum value and the minimum value is within a variation range of 30A or less.
- the superconducting characteristic C indicates that the superconducting characteristic has been confirmed that the critical current value exceeds 150 A in the range of all measurement points, and the difference between the maximum value and the minimum value is within the variation range within 50 A.
- a of a peeling characteristic points out that the peeling location is not confirmed in the range of evaluation sample length 1m.
- B of the peeling characteristic refers to that in which the slight peeling within one place is confirmed in the evaluation sample length of 1 m.
- the peeling property C is within the range of the evaluation sample length of 1 m, and the peeling state at a plurality of places is confirmed, but the total length of the peeling portions is less than 0.5 m, that is, less than half of the evaluation sample length. Point to.
- the peeling property D indicates that the peeled state at a plurality of locations is confirmed within an evaluation sample length of 1 m, and the total length of the peeled portions is 0.5 m or more, that is, half or more of the evaluation sample length is confirmed.
- the shoulder distance ratio when the shoulder distance ratio is 0.005% or more, a plurality of peeling portions are observed within the evaluation sample length of 1 m, but the total length of the peeling portions is set to 0. It was possible to suppress to less than 5 m, that is, less than half of the evaluation sample length.
- the shoulder distance ratio is in the range of 0.018% or more and 5.00% or less, the number of peelings can be suppressed within one place within the evaluation sample length of 1 m.
- the shoulder distance ratio when the shoulder distance ratio was in the range of 0.15% or more and 1.00% or less, there was no peeling within the evaluation sample length of 1 m.
- the shoulder distance ratio is preferably 0.018% or more and 5.00% or less, and more preferably 0.15% or more and 1.00% or less. I understood that.
- the present Example evaluated based on the shape of FIG. 4, it was not limited to this shape, It confirmed that peeling characteristics improved with the ratio of the shoulder distance also in other embodiment.
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Abstract
Description
<2> 前記広がり面の表面粗さは、前記成膜面の表面粗さよりも粗い、<1>に記載の超電導成膜用基材。
<3> 前記広がり面の表面粗さは、15nm以上である、<2>に記載の超電導成膜用基材。
<4> 前記一対の側面間の最大距離に対して、前記一対の広がり面における前記成膜面の面内方向の広がり距離の比率は、それぞれ0.005%以上7.59%以下である、<1>~<3>の何れか1項に記載の超電導成膜用基材。
<5> テープ状の基材本体と、前記基材本体の少なくとも両側面を覆い、前記基材本体よりも展性が高い金属層と、を有し、前記一対の側面は、前記金属層に成形されている、<1>~<4>の何れか1項に記載の超電導成膜用基材。
<6> 前記一対の側面は、超電導成膜用基材の長手方向に亘って窪んだアンカー部を含む、<1>~<5>の何れか1項に記載の超電導成膜用基材。
<7> 前記成膜面の縁部から広がる広がり面を第1広がり面とし、前記一対の側面は、さらに、前記裏面の縁部から前記第1広がり面に向って前記成膜面の面内方向において前記裏面の外側に広がる第2広がり面を含む、<1>~<6>の何れか1項に記載の超電導成膜用基材。
<8> 前記一対の側面は、さらに、前記広がり面から連なり、前記裏面と垂直な垂直面を含む、<1>~<7>の何れか1項に記載の超電導成膜用基材。
<10> 前記超電導層は、前記成膜面に位置し超電導相となる酸化物超電導体を主体とする超電導部と、前記広がり面側に位置し常電導相となる酸化物超電導体を含む常電導部とを有する、<9>に記載の超電導線。
<11> 前記超電導層は、前記中間層よりも前記広がり面の面内方向において外側に向かって延在し、前記中間層の端面を覆っている、<9>又は<10>に記載の超電導線。
<12> 超電導層を含む積層体を成膜するための成膜面と、前記成膜面と反対側の面である裏面と、前記成膜面と前記裏面に連なる一対の端面と、前記成膜面と前記裏面に連なる一対の側面とを有するテープ状の超電導成膜用基材を加工して、前記一対の側面に、前記成膜面の縁部から前記裏面側に向かって前記成膜面の面内方向において外側に広がる広がり面をそれぞれ成形する加工工程と、前記加工工程後に、前記超電導成膜用基材の成膜面、及び前記一対の側面のうち少なくとも前記広がり面に中間層を成膜する中間層成膜工程と、前記中間層の表面に超電導層を成膜する超電導層成膜工程と、を有する超電導線の製造方法。
<13> 前記加工工程では、テープ状の基材本体の一対の側面を、前記基材本体よりも展性が高い金属層で被覆して前記超電導成膜用基材を得る被覆工程を有し、得られた超電導成膜用基材の金属層を加工して、前記一対の側面に広がり面をそれぞれ成形する、<12>に記載の超電導線の製造方法。
<14> 前記超電導層成膜工程の後、前記広がり面側に位置する超電導層部分を熱処理して前記広がり面側に位置する超電導層部分を非超電導化する工程を有する、<12>又は<13>に記載の超電導線の製造方法。
-超電導成膜用基材及び超電導線の概略構成-
図1は、本発明の第1実施形態に係る超電導成膜用基材を含む超電導線の斜視図である。
図1に示すように、超電導線20は、超電導成膜用基材10の厚み方向Tの一方の主面(以下、成膜面10Aという)に、中間層30、超電導層40及び安定化層50がこの順に積層した積層構造を有している。
なお、表面粗さとは、JISB-0601-2001において規定する表面粗さパラメータの「高さ方向の振幅平均パラメータ」における算術平均粗さRaである。
具体的に、本第1実施形態に係る超電導成膜用基材10では、図1に示すように、広がり面12は、一対の側面10E及び10Fの両方を指しており、成膜面10Aに対する内角が90度より大きく180度より小さい傾斜面となっている。これにより、一対の端面10C及び10Dの形状はそれぞれ、成膜面10Aが上底で裏面10Bが下底の台形状となっている。
なお、「常電導化」は、「常伝導化」とも記載され、超電導体を極低温に冷やしても超電導現象を起こさないようにすることである。
さらにまた、広がり面12の表面粗さは、製造時の研磨砥粒の残りや、広がり面12と製造時に用いるサセプタやガイドロール、ガイドプーリーとの接触による微粒の飛散を介して、成膜面10Aが汚染される(間接的な表面傷を受ける)ことを抑制するという観点から、500nm以下であることが好ましい。
なお、以上説明した表面粗さは、広がり面12だけでなく、広がり面12を含む一対の側面10E,10Fにも適用することが好ましい。
また、最大距離D1に対して広がり距離D2の比率は、0.018%以上5.00%以下であることが好ましい。上記比率が上記数値範囲内であると、評価サンプル長さ1m内で、剥離を効果的に抑制することができるからである。
さらに、より効果的に剥離を抑制するという観点から、最大距離D1に対して広がり距離D2の比率は、0.15%以上1.00%以下であることが好ましい。
例えば、図1に示すように、超電導成膜用基材10の中央部に、テープ状でその厚み方向に切ったときの断面視が矩形状とされ、超電導成膜用基材10に用いる材料として上述した材料で構成される基材本体14と、当該基材本体14の少なくとも両側面を覆い、基材本体14よりも展性が高い金属層16と、を有するようにしてもよい。
これにより、上記一対の側面10F及び10Eは、金属層16に成形することになるが、金属層16が基材本体14よりも展性が高いため、成形が容易となる。また、超電導成膜用基材10全体の展性を高くする場合に比べて、展性の低い基材本体14がある分だけ、超電導成膜用基材10の機械的強度が低下することを抑制できる。
このとき、超電導層部分40Bは予め表面粗さが15nm以上500nm以下に成形されているため、中間層30を構成する各層の結晶配向が不均一になるので、中間層30の配向性が変動する。また、中間層30がIBAD法により成形された強制配向層を有する場合、IBAD法の照射方向は、超電導成膜用基材10の成膜面10Aに対して適正な照射がなされるようにある任意の角度で調整されているため、一対の側面10E及び10Fに対する照射角度が、成膜のための適正な角度から逸脱する状態となり、中間層30の成膜状態は不均一なものとなる。以上のメカニズムにより、成膜面10Aに位置する超電導層部分40Aと広がり面12に位置する超電導層部分40Bは、異なる性質(超電導部と常電導部)に制御されることになる。
ここで、上記及び以降から説明する「主体」とは、ある層又はある部分を構成する構成成分のうち、最も多く中に含有されている成分を表す。例えば、ある層またはある部分が主体となる成分のみからなっていてもよい。
また、常電導部は、超電導成膜用基材10の組成物及び中間層30の組成物のうち少なくとも何れか一方の一部を含むことが好ましい。酸化物超電導体に上記組成物が混じることで、酸化物超電導体が確実に常電導相となり、また超電導層40と中間層30との密着性が高まるからである。
この安定化層50は、単層構造であってもよく、多層構造であってもよい。多層構造の場合、その層数や種類は限定されないが、銀からなる銀安定化層と、銅からなる銅安定化層を順に積層した構成となっていてもよい。
次に、本発明の第1実施形態に係る超電導線20の製造方法について説明する。図2は、本発明の第1実施形態に係る超電導線20の製造方法の工程図である。なお、以下の括弧内は図中のステップ識別符号である。
この加工工程は、ステップS11からステップS18までの工程があるが、少なくともステップS16の側面成形工程を行えば、他の工程は省略することができる。
化学研磨では、研磨液は超電導成膜用基材表面と化学反応する化学溶剤であって、例えば、硝酸、硫酸、蟻酸、酢酸、塩素、フッ素、クロム過酸化水素、シュウ酸、テトラリン酸、氷酢酸などの液体、或いはその混合液で、更にその混合液に飽和アルコールやスルホン酸類などの促進剤を混合した溶液が望ましい。
化学機械研磨では、研磨粒は上記機械研磨粒でも良く、そこに化学研磨の溶液を含む研磨溶剤(スラリー)を用いる。
電解研磨では、超電導成膜用基材を電解液に浸して、超電導成膜用基材を陽極として通電して、電解反応で超電導成膜用基材表面を研磨する。この電解液は酸やアルカリで良く、特に、硝酸、リン酸、クロム酸、過酸化水素、水酸化カリウム、シアン化カリウムなどが望ましい。
また、成形ロールは溝型であり、一体化、分割化の構造でもよい。また、成形ロールと平ロールの組み合わせを1対として、複数の対ロールをタンデムに組み合わせて広がり面12を所定の形状に成形することも可能である。
なお、当該被覆工程では、乾式メッキや湿式メッキ法を用いることができる。
また、超電導成膜用基材の側面及び成膜面側角部を最終形状に近似した形状に研磨により成形し、その後、側面及び角部に金属層16を被覆し、最終形状に成形する組み合わせも可能である。
また、上記ステップS15とS16は連続的なラインで、同時に行うことも可能であり、コスト低減に有効である。
なお、精密研磨前の側面と角部には突起物がなく、滑らかな傾斜のため、研磨ライン、研磨布の破損や、電界集中が軽減され、研磨の一様性が向上し、精密研磨コストの低減効果がある。
以上のS11~S18の加工工程を経ることにより、本第1実施形態に係る超電導成膜用基材10が得られる。なお、以上のS11~S18のうち、S16以外の工程は省略することもできる。
この中間層成膜工程では、中間層30を、精密研磨により形成された高い平坦性を有する超電導成膜用基材10の成膜面10A上だけでなく、一対の側面10E及び10F上にも成膜する。このとき、一対の側面10E 及び10Fには、成膜面10Aの縁部から裏面10B側に向かって成膜面10Aの面内方向Pにおいて外側に広がる広がり面12が成形されているので、一対の側面10E及び10F上にも中間層30を確実に成膜することができる。
中間層30の成膜方法としては、例えばスパッタリング法やIBAD法等が挙げられる。
超電導層40の形成(成膜)方法としては、例えばTFA-MOD法、PLD法、CVD法、MOCVD法、またはスパッタリング法などが挙げられる。例えば、スパッタリング法では、中間層30表面の法線方向から、ターゲット粒子を中間層30の幅より広い範囲で照射・堆積することで、中間層30の角部(端部)を覆うように超電導層40を成膜することができる。なお、中間層30表面に対する照射角度を法線方向に対して、幅方向に角度を増減する位置に調整することで、中間層30の端面等に超電導層40をより確実に成膜することもできる。
このスパッタリング法では、超電導層40の成膜と同様に、超電導層40表面の法線方向から、ターゲット粒子を超電導層40の幅より広い範囲で照射・堆積したり、幅方向に角度を増減する位置に調整したりすることができる。
この超電導線20は、成膜面10Aだけでなく広がり面12にも中間層30や超電導層40(積層体)があるため、成膜面10Aにのみ積層体がある場合に比べて、積層体の剥離を抑制することができる。
次に、本発明の第2実施形態に係る超電導線について説明する。図3は、本発明の第2実施形態に係る超電導線120を端面方向から見た図である。
この超電導成膜用基材110は、超電導層40を含む積層体を成膜するための成膜面110Aの他、成膜面110Aの反対側の面である裏面110Bと、成膜面110Aと裏面110Bに連なる一対の端面(図中では一方の端面110Cのみ記載)と、これら成膜面110A、裏面110B及び一対の端面(図中では一方の端面110Cのみ記載)に連なる一対の側面110E及び110Fを有している。
本第2実施形態では、広がり面112は、一対の側面110E及び110Fの成膜面側縁部がR形状となっている部分を指す。
この広がり面112は、広がり面12と同様に構成することができる。
例えば一対の側面110E及び110F間の最大距離D1(成膜面110Aの幅D3の長さを含む)に対して、一対の広がり面112の、成膜面Aの面内方向Pにおける広がり距離D2(すなわち、広がり面の、成膜面側末端と裏面側末端との間の、成膜面の面内方向Pにおける距離)の比率{(D2/D1)×100}は、それぞれ0.005%以上7.59%以下であることが好ましい。また、最大距離D1に対して広がり距離D2の比率は、0.018%以上5.00%以下であることが好ましい。さらに、最大距離D1に対して広がり距離D2の比率は、0.15%以上1.00%以下であることが好ましい。
また、超電導成膜用基材110は直交面114を含んでいるので、第1実施形態に比べて、成膜面110Aを確保しつつ、超電導成膜用基材110の全体幅を小さくすることができる。
なお、第2実施形態では、中間層3等の積層体は広がり面112だけでなく、直交面114にも積層していてもよい。
次に、本発明の第3実施形態に係る超電導線について説明する。図4は、本発明の第3実施形態に係る超電導線220を端面方向から見た図である。
この超電導成膜用基材210は、超電導層40を含む積層体を成膜するための成膜面210Aの他、成膜面210Aの反対側の面である裏面210Bと、成膜面210Aと裏面210Bに連なる一対の端面(図中では一方の端面210Cのみ記載)と、これら成膜面210A、裏面210B及び一対の端面210Cに連なる一対の側面210E及び210Fを有している。
第3実施形態では、これら第1広がり面212と第2広がり面214は共にR形状となって連なっている。すなわち、一対の側面210E及び210Fの形状が円弧状となっている。
また、これら第1広がり面212と第2広がり面214は、広がり面12と同様に構成することができる。
例えば一対の側面210E及び210F間の最大距離D1に対して、一対の第1広がり面212の、成膜面の面内方向Pにおける広がり距離D2(すなわち、第1広がり面の、成膜面側末端と裏面側末端との間の、成膜面の面内方向Pにおける距離)の比率{(D2/D1)×100}は、それぞれ0.005%以上7.59%以下であることが好ましい。また、最大距離D1に対して広がり距離D2の比率は、0.018%以上5.00%以下であることが好ましい。さらに、最大距離D1に対して広がり距離D2の比率は、0.15%以上1.00%以下であることが好ましい。
また、R形状の第2広がり面214があることで、超電導成膜用基材210の周囲全体を覆う第2安定化層54を、裏面210B縁部付近に対してより確実に成膜できる。
なお、本発明を特定の実施形態について詳細に説明したが、本発明はかかる実施形態に限定されるものではなく、本発明の範囲内にて他の種々の実施形態が可能であることは当業者にとって明らかであり、例えば上述の複数の実施形態は、適宜、組み合わされて実施可能である。また、以下の変形例を、適宜、組み合わせてもよい。
この一対の側面610E及び610Fには、傾斜面614と傾斜面616とで、側面中央部が長手方向L(図1参照)に亘って窪んだアンカー部620が形成される。このアンカー部620に、超電導層40を含む積層体を積層させることにより、積層体の剥離がより一層抑制できるようになる。
実施例1に係る超電導成膜用基材及び超電導線を以下のように作製した。
まず、ハステロイ素材0.3mmt×75mm幅×350m(BA(bright annealing)材:表面粗さ約Ra50nm)の両面を機械研磨で表面粗さRaを30nm程度に改質した。
次に、このテープ基材を用いて、ロール径Φ20mmの12段圧延機で0.1mmt×75mm幅×1050mのテープ基材を製造した。
このときの圧延の最終仕上がりテープ基材表裏面の表面粗さをRaで約9nmの鏡面仕上げとした。
このようにしてテープ基材にロール圧延を施し、更に、仕上りサイズでスリット加工することで、厚さ100μm幅10mm×1050m×6条のテープに仕上げた。圧延工程の加工率は60%以上を確保した。
このときのスリットは、圧延時の表面を、スリット後の10mm幅6条すべての表面になるようにスリット面を統一した方向で行った。この場合、スリットにより発生したカエリの出側方向を10mm幅の裏面方向に統一できるので、側面の形状制御性が高く、有意である。カエリが交互方向に出るスリット工法でも側面成形は可能であるが、表裏を反転させるなど作業が煩雑になる場合がある。
また、一対の側面間の最大距離D1に対して、1つの広がり面の、成膜面の面内方向P(または基材の幅方向)の広がり距離D2(すなわち、広がり面の、成膜面側末端と裏面側末端との間の、成膜面の面内方向Pにおける距離であって、肩距離ともいう)の比率{(D2/D1)×100}は、0.005%であった。
実施例2~19に係る超電導成膜用基材及び超電導線は、実施例1と同一の方法で作製した。ただし、一対の側面間の最大距離D1に対して、1つの広がり面の成膜面の面内方向P(または基材の幅方向)における広がり距離D2(すなわち、広がり面の、成膜面側末端と裏面側末端との間の、成膜面の面内方向Pにおける距離であって、肩距離ともいう)の比率{(D2/D1)×100}がそれぞれ以下の値となるように、広がり面を成形した。
実施例2:0.010%、実施例3:0.018%、実施例4:0.044%、実施例5:0.10%、実施例6:0.150%、実施例7:0.176%、実施例8:0.466%、実施例9:0.50%、実施例10:1.00%、実施例11:1.43%、実施例12:2.14%、実施例13:5.00%、実施例14:5.61%、実施例15:7.59%、実施例16:11.43%、実施例17:28.64%、実施例18:47.74%、実施例19:49.95%。
次に、比較例1に係る超電導成膜用基材及び超電導線を、実施例1と同様の方法で作製した。ただし、図2に示すS16の側面成形は行わなかった。したがって、肩距離の比率は0%である。
次に、得られた各実施例及び比較例の超電導線について、超電導特性の評価を行った。
超電導特性の評価では、各超電導線を200m分それぞれ液体窒素に浸漬した状態で、四端子法を用いて臨界電流Icを測定した。測定は1mピッチとし、電圧端子は1.2mとした。
次に、得られた各実施例及び比較例の超電導線について、剥離特性の評価を行った。
この剥離特性では、超電導線の中間層、超電導層及び安定化層の密着状態を曲げ試験法にて確認した。
具体的に、曲げ試験では、安定化層まで形成された超電導線(厚みt=0.2mm)に対し、円柱状物(直径φ=10mm)を用いて、超電導線の長手方向を円柱状物の外周面の湾曲に沿うように、超電導線の表裏の両方向に対して1回ずつ曲げひずみε=2%(ε=t/φ)を与えて、超電導線の側面および、表層における剥離状態を評価した。この時の曲げ試験は、超電導線に対して張力を印加しない無張力条件下で行った。
以下の表1及び表2に、肩距離の比率を変化させたときの超電導特性と剥離特性の評価結果を示す。
なお、表中には肩距離の比率と合わせて、肩距離の絶対値も記載している。
また、表1及び表2において、超電導特性のAは、すべての測定点の範囲で臨界電流値が300Aを超え、その最大値と最小値の差が10A以内のバラツキ範囲内である超電導特性が確認されたものを指す。超電導特性のBはすべての測定点の範囲で臨界電流値が250Aを超え、その最大値と最小値の差が30A以内のバラツキ範囲内である超電導特性が確認されたものを指す。超電導特性のCはすべての測定点の範囲で臨界電流値が150Aを超え、その最大値と最小値の差が50A以内のバラツキ範囲内である超電導特性が確認されたものを指す。
また、表1及び表2において、剥離特性のAは評価サンプル長さ1mの範囲で、剥離箇所が確認されないものを指す。剥離特性のBは評価サンプル長さ1mの範囲で、一箇所以内の僅かな剥離が確認されたものを指す。剥離特性のCは評価サンプル長さ1mの範囲で、複数個所の剥離状態が確認されるものの、剥離部分の合計の長さが0.5m未満、すなわち評価サンプル長さの半分未満となるものを指す。剥離特性のDは評価サンプル長さ1m内で、複数個所の剥離状態が確認され、剥離部分の合計の長さが0.5m以上、すなわち評価サンプル長さの半分以上確認されたものを指す。
表1及び表2に示す結果から、まず、肩距離のある実施例1~19の方が、肩距離のない比較例1に比べて、剥離特性が向上していることが分かった。ただし、超電導特性までも考慮すると、0.005%以上7.59%以下であることが好ましいことが分かった。
なお、肩距離の比率が7.59%超で超電導特性が悪化したのは、肩距離の幅方向の占める割合が大きくなり、超電導特性の有効幅が減少したからだと考えられる。また、肩距離の比率が0.005%未満で剥離特性が悪化したのは、スリット上がりの矩形状基材の成膜後の形態に近似するので、側面からの層剥離の事象が起きやすくなったからだと考えられる。
本明細書に記載された全ての文献、特許出願、及び技術規格は、個々の文献、特許出願、及び技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書中に参照により取り込まれる。
Claims (14)
- テープ状の超電導成膜用基材であって、
超電導層を含む積層体を成膜するための成膜面と、
前記成膜面の反対側の面である裏面と、
前記成膜面と前記裏面に連なる一対の端面と、
前記成膜面、前記裏面及び前記一対の端面に連なる一対の側面と、
を有し、
前記一対の側面が、前記成膜面の縁部から前記裏面側に向かって前記成膜面の面内方向において外側に広がる広がり面をそれぞれ含む、
超電導成膜用基材。 - 前記広がり面の表面粗さは、前記成膜面の表面粗さよりも粗い、
請求項1に記載の超電導成膜用基材。 - 前記広がり面の表面粗さは、15nm以上である、
請求項2に記載の超電導成膜用基材。 - 前記一対の側面間の最大距離に対して、前記一対の広がり面における前記成膜面の面内方向の広がり距離の比率は、それぞれ0.005%以上7.59%以下である、
請求項1~請求項3の何れか1項に記載の超電導成膜用基材。 - テープ状の基材本体と、
前記基材本体の少なくとも両側面を覆い、前記基材本体よりも展性が高い金属層と、
を有し、
前記一対の側面は、前記金属層に成形されている、
請求項1~請求項4の何れか1項に記載の超電導成膜用基材。 - 前記一対の側面は、超電導成膜用基材の長手方向に亘って窪んだアンカー部を含む、
請求項1~請求項5の何れか1項に記載の超電導成膜用基材。 - 前記成膜面の縁部から広がる広がり面を第1広がり面とし、
前記一対の側面は、さらに、前記裏面の縁部から前記第1広がり面に向って前記成膜面の面内方向において前記裏面の外側に広がる第2広がり面を含む、
請求項1~請求項6の何れか1項に記載の超電導成膜用基材。 - 前記一対の側面は、さらに、前記広がり面から連なり、前記裏面と垂直な垂直面を含む、
請求項1~請求項7の何れか1項に記載の超電導成膜用基材。 - 請求項1~請求項8の何れか1項に記載の超電導成膜用基材と、
前記超電導成膜用基材の成膜面、及び前記一対の側面のうち少なくとも前記広がり面に積層した中間層と、
前記中間層の表面に積層した超電導層と、
を有する超電導線。 - 前記超電導層は、前記成膜面に位置し超電導相となる酸化物超電導体を主体とする超電導部と、前記広がり面側に位置し常電導相となる酸化物超電導体を含む常電導部とを有する、
請求項9に記載の超電導線。 - 前記超電導層は、前記中間層よりも前記広がり面の面内方向において外側に向かって延在し、前記中間層の端面を覆っている、
請求項9又は請求項10に記載の超電導線。 - 超電導層を含む積層体を成膜するための成膜面と、前記成膜面と反対側の面である裏面と、前記成膜面と前記裏面に連なる一対の端面と、前記成膜面と前記裏面に連なる一対の側面とを有するテープ状の超電導成膜用基材を加工して、前記一対の側面に、前記成膜面の縁部から前記裏面側に向かって前記成膜面の面内方向において外側に広がる広がり面をそれぞれ成形する加工工程と、
前記加工工程後に、前記超電導成膜用基材の成膜面、及び前記一対の側面のうち少なくとも前記広がり面に中間層を成膜する中間層成膜工程と、
前記中間層の表面に超電導層を成膜する超電導層成膜工程と、
を有する超電導線の製造方法。 - 前記加工工程では、テープ状の基材本体の一対の側面を、前記基材本体よりも展性が高い金属層で被覆して前記超電導成膜用基材を得る被覆工程を有し、得られた超電導成膜用基材の金属層を加工して、前記一対の側面に広がり面をそれぞれ成形する、
請求項12に記載の超電導線の製造方法。 - 前記超電導層成膜工程の後、前記広がり面側に位置する超電導層部分を熱処理して前記広がり面側に位置する超電導層部分を非超電導化する工程を有する、
請求項12又は請求項13に記載の超電導線の製造方法。
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US10497494B2 (en) | 2014-07-31 | 2019-12-03 | Sumitomo Electric Industries, Ltd. | Superconducting wire |
US11264151B2 (en) | 2014-07-31 | 2022-03-01 | Sumitomo Electric Industries, Ltd. | Superconducting wire |
DE112015003518B4 (de) | 2014-07-31 | 2024-03-28 | Sumitomo Electric Industries, Ltd. | Supraleitender Draht |
WO2017081762A1 (ja) * | 2015-11-11 | 2017-05-18 | 住友電気工業株式会社 | 超電導線材 |
JPWO2017081762A1 (ja) * | 2015-11-11 | 2018-08-30 | 住友電気工業株式会社 | 超電導線材 |
US11665982B2 (en) | 2015-11-11 | 2023-05-30 | Sumitomo Electric Industries, Ltd. | Superconducting wire |
Also Published As
Publication number | Publication date |
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US20150038334A1 (en) | 2015-02-05 |
EP2728590A1 (en) | 2014-05-07 |
US9002424B2 (en) | 2015-04-07 |
KR20140090592A (ko) | 2014-07-17 |
JP5367927B1 (ja) | 2013-12-11 |
EP2728590A4 (en) | 2015-08-26 |
EP2728590B1 (en) | 2018-04-11 |
EP2728590B9 (en) | 2018-09-05 |
CN103718256B (zh) | 2016-11-16 |
CN103718256A (zh) | 2014-04-09 |
KR101553183B1 (ko) | 2015-09-14 |
JPWO2013157286A1 (ja) | 2015-12-21 |
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