WO2013141374A1 - Film électroconducteur transmettant la lumière, procédé de production associé, utilisation correspondante - Google Patents

Film électroconducteur transmettant la lumière, procédé de production associé, utilisation correspondante Download PDF

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Publication number
WO2013141374A1
WO2013141374A1 PCT/JP2013/058337 JP2013058337W WO2013141374A1 WO 2013141374 A1 WO2013141374 A1 WO 2013141374A1 JP 2013058337 W JP2013058337 W JP 2013058337W WO 2013141374 A1 WO2013141374 A1 WO 2013141374A1
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Prior art keywords
layer
light
light transmissive
optical adjustment
conductive film
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PCT/JP2013/058337
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English (en)
Japanese (ja)
Inventor
守雄 滝沢
白木　真司
哲郎 澤田石
田中　治
林　秀樹
中谷　康弘
Original Assignee
積水ナノコートテクノロジー株式会社
積水化学工業株式会社
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Application filed by 積水ナノコートテクノロジー株式会社, 積水化学工業株式会社 filed Critical 積水ナノコートテクノロジー株式会社
Priority to JP2013541094A priority Critical patent/JP5425351B1/ja
Priority to KR1020147014897A priority patent/KR101454148B1/ko
Priority to CN201380003369.1A priority patent/CN103858182B/zh
Publication of WO2013141374A1 publication Critical patent/WO2013141374A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00788—Producing optical films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0073—Optical laminates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/02—Input arrangements using manually operated switches, e.g. using keyboards or dials
    • G06F3/0202—Constructional details or processes of manufacture of the input device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels

Definitions

  • the present invention relates to a light-transmitting conductive film, a manufacturing method thereof, and an application thereof.
  • a light-transmitting conductive layer containing indium oxide is disposed on at least one surface of a light-transmitting support layer made of plastic or the like, directly or via another layer. Many such light-transmitting conductive films are used.
  • the light-transmitting conductive layer may be arranged as a grid-like electrode, if the grid-like structure is visible from the user's viewpoint, the visibility as a touch panel is impaired, which is not preferable. Note that the fact that such a phenomenon has been eliminated is sometimes referred to as “index matching is good”.
  • the light transmissive conductive film is exposed to a predetermined chemical treatment. Therefore, the light-transmitting conductive film having poor chemical resistance has a problem that it is damaged by chemical treatment in the manufacturing process.
  • the electrode having the above-described lattice shape or the like when forming the electrode having the above-described lattice shape or the like, a so-called etching process is performed in which the light-transmitting conductive layer is removed only in a predetermined region by chemical treatment, and as a result Forming a shaped electrode has been performed. Accordingly, the light-transmitting conductive film that is difficult to be etched by the etching process (that is, the light-transmitting conductive layer is difficult to be removed in a desired region) has low production efficiency in the process of manufacturing the touch panel, and is easily etched excessively.
  • the light-transmitting conductive layer is removed unintentionally even in a region different from the desired region.
  • a light-transmitting conductive film With a light-transmitting conductive film, it is difficult to form the light-transmitting conductive layer into a desired shape. There are problems such as.
  • the present invention relates to a light-transmitting conductive film comprising (A) a light-transmitting support layer, (B) an optical adjustment layer, and (C) a light-transmitting conductive layer containing indium oxide. , (2) To improve the balance between chemical resistance and (3) etching property.
  • the inventors of the present invention have made extensive studies, adopting an optical adjustment layer (B) containing zirconia and having a thickness of 0.4 to 3 ⁇ m, and the entire film in the XRD measurement by the thin film method.
  • the present invention has been completed by further various studies based on this new knowledge, and is as follows.
  • Item 1 (A) a light transmissive support layer; (B) an optical adjustment layer; and (C) a light-transmitting conductive layer containing indium oxide,
  • the optical adjustment layer (B) is disposed on at least one surface of the light transmissive support layer (A) directly or via one or more other layers, and the light transmissive conductive layer (C ) Is a light transmissive conductive film disposed on at least one surface of the light transmissive support layer (A) via at least the optical adjustment layer (B):
  • a ratio of the (222) plane to the peak is 0.1 to 1.0.
  • Item 2 Item 2.
  • Item 3 Item 3.
  • Item 4 Item 4.
  • Item 5 Item 5.
  • Item 6 Item 6.
  • Item 7 Item 7.
  • a touch panel comprising the light transmissive conductive film according to any one of Items 1 to 6.
  • index matching index matching, (2) chemical resistance, and (3) an improved balance of etching properties
  • A a light transmissive support layer
  • B an optical adjustment layer
  • C A light-transmitting conductive film containing a light-transmitting conductive layer containing indium oxide
  • the first optical adjustment layer (B), the undercoat layer (D) and the light transmissive conductive layer (C) are arranged in this order on one surface of the light transmissive support layer (A), and It is sectional drawing which shows the translucent conductive film of this invention by which the 2nd optical adjustment layer (B) is directly arrange
  • the light transmissive conductive film of the present invention comprises: (A) a light transmissive support layer; (B) an optical adjustment layer; and (C) a light-transmitting conductive layer containing indium oxide,
  • the optical adjustment layer (B) is disposed on at least one surface of the light transmissive support layer (A) directly or via one or more other layers, and the light transmissive conductive layer (C ) Is a light transmissive conductive film disposed on at least one surface of the light transmissive support layer (A) via at least the optical adjustment layer (B):
  • the light-transmitting conductive film is characterized in that the ratio of the (222) plane to the peak is 0.1 to 1.0.
  • light-transmitting means having a property of transmitting light (translucent).
  • Light transmissivity includes transparency.
  • Light transmissivity means, for example, the property that the total light transmittance is 80% or more, preferably 85% or more, more preferably 87% or more. In the present invention, the total light transmittance is measured based on JIS-K-7105 using a haze meter (trade name: NDH-2000 manufactured by Nippon Denshoku Co., Ltd. or equivalent).
  • the light transmissive support layer (A) is used as a reference.
  • One layer having a large distance from the light transmissive support layer (A) is referred to as “upper layer” and the like, and the other layer having a small distance from the light transmissive support layer (A) is referred to as “lower layer”. And so on.
  • each layer is determined using a commercially available reflection spectral film thickness meter (Otsuka Electronics, FE-3000, or equivalent).
  • the thickness of each layer may be obtained by observation using a commercially available transmission electron microscope.
  • the light-transmitting conductive film is thinly cut in a direction perpendicular to the film surface using a microtome or a focus ion beam, and the cross section is observed.
  • FIG. 1 shows an embodiment of the light-transmitting conductive film of the present invention.
  • the optical adjustment layer (B) and the light transmissive conductive layer (C) are arranged in this order on one surface of the light transmissive support layer (A).
  • FIG. 2 shows another embodiment of the light transmissive conductive film of the present invention.
  • the optical adjustment layer (B) and the light transmissive conductive layer (C) are arranged in this order on both surfaces of the light transmissive support layer (A).
  • the light transmissive support layer refers to a light transmissive conductive film containing a light transmissive conductive layer, which plays a role of supporting the layer containing the light transmissive conductive layer. Although it does not specifically limit as a light transmissive support layer (A), For example, in the light transmissive conductive film for touch panels, what is normally used as a light transmissive support layer can be used.
  • the material of the light transmissive support layer (A) is not particularly limited, and examples thereof include glass and various organic polymers.
  • the organic polymer is not particularly limited.
  • examples include resins, polyamide resins, polyvinyl chloride resins, polyacetal resins, polyvinylidene chloride resins, and polyphenylene sulfide resins.
  • polyester-type resin For example, a polyethylene terephthalate (PET), a polyethylene naphthalate (PEN), etc. are mentioned.
  • the material of the light transmissive support layer (A) is preferably a polyester resin, and particularly preferably PET.
  • the light transmissive support layer (A) may be composed of any one of these, or may be composed of a plurality of types.
  • the thickness of the light transmissive support layer (A) is not particularly limited, and examples thereof include a range of 2 to 300 ⁇ m.
  • the optical adjustment layer (B) is disposed directly or via one or more other layers on at least one surface of the light transmissive support layer (A).
  • the optical adjustment layer (B) is preferably disposed directly on the surface of the light transmissive support layer (A).
  • One layer of the optical adjustment layer (B) may be disposed.
  • two or more layers may be arranged adjacent to each other or separated from each other via other layers.
  • the optical adjustment layer (B) may be directly disposed on both surfaces of the light transmissive support layer (A).
  • the optical adjustment layer located below has a higher refractive index than the optical adjustment layer located above. Also good.
  • an optical interference action is generated between two layers having different refractive indexes, which is preferable because the transmittance of the light-transmitting conductive film is improved.
  • the optical adjustment layer refers to a layer that plays a role of improving the transmittance of the light transmissive film by optical interference.
  • an optical adjustment layer B
  • what is normally used as an optical adjustment layer in the transparent conductive film for touchscreens can be used.
  • the optical adjustment layer (B) contains zirconia.
  • the zirconia contained in the optical adjustment layer (B) is preferably in the form of particles, more preferably the average particle size is 10 to 40 nm, and still more preferably the average particle size is 10 to 30 nm.
  • the average particle size of zirconia is smaller than 40 nm, the etching property is further improved, and when it is larger than 10 nm, the dispersibility is further improved and the workability is further improved.
  • XRD measurement by the thin film method is performed as follows.
  • the X-ray diffractometer is measured by a thin film method using a Rigaku thin film evaluation sample horizontal X-ray diffractometer SmartLab or equivalent.
  • a parallel beam optical arrangement is used, and CuK ⁇ rays (wavelength: 1.54186 ⁇ ) are used as a light source at a power of 40 kV and 30 mA.
  • the incident side slit system uses a solar slit of 5.0 °, a height control slit of 10 mm, and an incident slit of 0.1 mm, and the light receiving side slit has a parallel slit analyzer (PSA) of 0.114 deg. Is used.
  • PSA parallel slit analyzer
  • the detector uses a scintillation counter.
  • the sample stage uses a porous adsorption sample holder, and a sample is adsorbed and fixed by a pump.
  • the incident angles are 0.40 °, 0.45 °, 0.55 °, and 0.60 °.
  • the result that the peak of interest is the strongest is adopted.
  • the step interval and the measurement speed are appropriately adjusted so that the X-ray diffraction pattern can be recognized.
  • measurement is performed at a step interval of 0.01 ° and a measurement speed of 3.0 ° / min.
  • the measurement range is 10 ° to 60 °.
  • the obtained X-ray diffraction pattern does not need to be monochromatic, and each peak intensity uses a value obtained by subtracting the background.
  • the average particle diameter of zirconia is determined by observation with a transmission electron microscope. Specifically, a light-transmitting conductive film is cut into thin pieces using a microtome or a focus ion beam, and the cross section is observed. Thus, the length in the long axis direction of 14 particles obtained by removing the upper 3 particles and the lower 3 particles in the long axis direction length from 20 randomly selected particles that can be visually recognized. Is the average particle diameter.
  • observation is performed in different regions of the same sample.
  • the zirconia particles cannot be distinguished from other particles, the particles are subjected to elemental analysis by EDX or EELS to identify the zirconia particles.
  • the thickness of the optical adjustment layer (B) is 0.4 to 3 ⁇ m, preferably 0.5 to 2.5 ⁇ m, more preferably 1 to 2 ⁇ m.
  • the index matching property is further improved.
  • it is larger than 0.4 ⁇ m a peak derived from zirconia can be confirmed more easily, and the index matching property is further improved.
  • the thickness of the optical adjustment layer (B) is measured as follows. Obtained by observation with a transmission electron microscope. Specifically, a light-transmitting conductive film is cut into thin pieces using a microtome or a focus ion beam, and the cross section is observed.
  • the optical adjustment layer (B) is preferable when the average surface roughness Ra on the surface opposite to the light-transmitting support layer (A) is 0.4 to 2.0 nm in terms of etching property. It is more preferably 5 to 1.8 nm, and further preferably 0.5 to 1.5 nm.
  • the average surface roughness Ra means an arithmetic average of roughness measured using a scanning probe microscope.
  • the average surface roughness Ra in the present invention can be measured using a commercially available scanning probe microscope (Shimadzu Corporation, SPM-9700, or equivalent), and a 1 ⁇ m square measurement surface in a predetermined contact mode. It is a value obtained by averaging absolute deviations from an average line obtained by scanning with a probe (OMLY-TR800-PSA-1, spring constant 0.15 N / m, manufactured by OLYMPUS).
  • the optical adjustment layer (B) is not particularly limited as long as the effects of the present invention are exhibited, but may further contain other components in addition to zirconia.
  • the other components are not particularly limited as long as the effects of the present invention are exhibited.
  • acrylic resins, silicone resins, melamine resins, and alkyd resins and colloidal particles such as silica, zirconia, titania, and alumina. Etc.
  • the optical adjustment layer (B) may further contain any one of them, or may further contain a plurality of types.
  • the content ratio of zirconia in the whole is not particularly limited as long as the effect of the present invention is exhibited, but is preferably 20% by weight or more. is there.
  • the method of disposing the optical adjustment layer (B) is not particularly limited, and examples thereof include a method of applying to a film and curing with heat, and a method of curing with active energy rays such as ultraviolet rays and electron beams. . From the viewpoint of productivity, a method of curing with ultraviolet rays is preferable.
  • the light transmissive conductive layer (C) contains indium oxide.
  • the light transmissive conductive layer (C) may further contain a dopant in addition to indium oxide.
  • the dopant is not particularly limited, and examples thereof include tin oxide, zinc oxide, cerium oxide, gadolinium oxide, silicon oxide, and titanium oxide. In addition to indium oxide, the light transmissive conductive layer (C) may contain these alone or as a dopant.
  • a layer containing indium tin oxide (ITO) can be given as a preferred example at present, but indium oxide containing another dopant as required. A layer containing can also be used.
  • Indium tin oxide is indium oxide doped with tin.
  • indium tin oxide indium tin oxide obtained by using indium (III) oxide (In 2 O 3 ) and tin (IV) oxide (SnO 2 ) is preferable.
  • the addition amount of SnO 2 is not particularly limited, and examples thereof include 1 to 15% by weight, preferably 2 to 10% by weight, and more preferably 3 to 8% by weight.
  • the light-transmitting conductive layer (C) may contain a dopant in which another dopant is further added to indium tin oxide in a range where the total amount of dopant does not exceed the numerical range shown on the left. Although it does not specifically limit as another dopant in the left, For example, zinc, cerium, gadolinium, silicon, titanium, etc. are mentioned.
  • the light transmissive conductive layer (C) may contain any one of the various indium tin oxides described above, or may contain a plurality of types.
  • the light transmissive conductive layer (C) may contain particles containing indium oxide.
  • the average particle diameter of the particles is not particularly limited as long as the effect of the present invention is exhibited, but is preferably 3.0 to 8.0 nm in terms of easy reduction in specific resistance, and preferably 3.5 to 6. 5 nm is more preferable, and 3.5 to 6.0 nm is more preferable.
  • particles containing indium oxide indium tin oxide particles can be cited as a preferred example at present, but particles of indium oxide containing other dopants can be used as necessary.
  • the average particle diameter of the particles containing indium oxide is 0.5 ⁇ m 2 in a predetermined contact mode using a commercially available scanning probe microscope (Shimadzu Corporation, SPM-9700, or equivalent). It is determined from the image obtained by scanning the measurement surface with a probe (OMLY-TR800-PSA-1, spring constant of 0.15 N / m, or equivalent) manufactured by OLYMPUS®. Specifically, particle diameters are classified by 1 nm for particles of 1 nm to 30 nm from the observed image, the number of particles integrated in each particle diameter is examined, and the particle diameter of D50 in the particle size distribution is defined as the average particle diameter. To do.
  • the light transmissive conductive layer (C) is not particularly limited, but may be a crystalline or amorphous body, or a mixture thereof.
  • the light-transmitting conductive film of the present invention has an improved balance of (1) index matching, (2) chemical resistance, and (3) etching property.
  • the light-transmitting conductive layer (C) having the above-mentioned characteristics is obtained by heat treatment of indium oxide (or a mixture of indium oxide and dopant when a dopant is further added; hereinafter, this mixture and indium oxide are collectively referred to as “ It is sometimes referred to as “indium oxide or the like”).
  • the conditions for this heat treatment can be appropriately set within the range in which the light-transmitting conductive layer (C) having the above characteristics can be obtained, and are not particularly limited. For example, heating in the atmosphere at 90 to 160 ° C. for 10 to 120 minutes Processing conditions etc. are mentioned. Specifically, heat treatment conditions in the atmosphere at 140 ° C. for 60 minutes can be given.
  • the light-transmitting conductive layer (C) has a crystal body such as indium oxide or a mixture of a crystal body such as indium oxide and an amorphous body such as indium oxide.
  • the light-transmitting conductive layer (C) having the above characteristics is formed by forming a layer containing indium oxide or the like on the underlying layer, and then in the atmosphere at 90 to 160 ° C., 10 to 10 ° C. It can be obtained by heat treatment for 120 minutes.
  • the light transmissive conductive layer (C) is disposed on at least one surface of the light transmissive support layer (A) via at least the optical adjustment layer (B).
  • the thickness of the light transmissive conductive layer (C) is 5 to 200 nm, preferably 10 to 100 nm, more preferably 15 to 50 nm. Further, as the light-transmitting conductive film for capacitive type touch panel, the thickness of the light-transmitting conductive layer (C) is 15 to 40 nm, preferably 15 to 38 nm, more preferably 17 to 35 nm.
  • the method for forming the light transmissive conductive layer (C) may be either wet or dry.
  • the method for forming the light-transmitting conductive layer (C) is not particularly limited, and examples thereof include an ion plating method, a sputtering method, a vacuum deposition method, a CVD method, and a pulse laser deposition method.
  • a method for forming the light transmissive conductive layer (C) a sputtering method is preferable.
  • the light-transmitting conductive layer (C) is formed by a sputtering method, it is not particularly limited.
  • the light transmissive conductive film of the present invention has an undercoat layer directly or via one or more other layers on the surface of the light transmissive support layer (A) where the light transmissive conductive layer (C) is disposed. (D) may be arranged.
  • the undercoat layer (D) is disposed, at least one of the light transmissive conductive layers (C) is supported by the light transmissive support through at least the undercoat layer (D) and the optical adjustment layer (B). It is arranged on the surface of the layer (A).
  • at least one of the light transmissive conductive layers (C) may be disposed adjacent to the undercoat layer (D).
  • the undercoat layer (D) is usually disposed closer to the light transmissive conductive layer (C) than the optical adjustment layer (B).
  • FIG. 4 shows one embodiment of the light-transmitting conductive film of the present invention.
  • the optical adjustment layer (B), the undercoat layer (D), and the light transmissive conductive layer (C) are arranged adjacent to each other in this order on one surface of the light transmissive support layer (A). ing.
  • FIG. 5 shows an embodiment of the light-transmitting conductive film of the present invention.
  • the optical adjustment layer (B), the undercoat layer (D), and the light transmissive conductive layer (C) are arranged adjacent to each other in this order on both surfaces of the light transmissive support layer (A). .
  • FIG. 6 shows one embodiment of the light-transmitting conductive film of the present invention.
  • the first optical adjustment layer (B), the undercoat layer (D), and the light transmissive conductive layer (C) are adjacent to each other in this order on one surface of the light transmissive support layer (A).
  • the second optical adjustment layer (B) is directly arranged on the other surface.
  • the material of the undercoat layer (D) is not particularly limited, but may be, for example, a dielectric material.
  • the material for the undercoat layer (D) is not particularly limited.
  • silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon alkoxide, alkylsiloxane and its condensate, polysiloxane, silsesquioxane, and Examples include polysilazane.
  • the undercoat layer (D) may be composed of any one of them, or may be composed of a plurality of types. A light-transmitting underlayer containing silicon oxide is preferable, and a light-transmitting underlayer made of silicon oxide is more preferable.
  • One layer of the undercoat layer (D) may be disposed.
  • two or more layers may be arranged adjacent to each other or separated from each other via other layers.
  • Examples of the thickness per layer of the undercoat layer (D) include 15 to 40 nm. When two or more layers are disposed adjacent to each other, the total thickness of all the undercoat layers (D) adjacent to each other may be within the above range. In the example list shown on the left, the following are more preferable than the above.
  • the method of disposing the undercoat layer (D) may be either wet or dry, and is not particularly limited.
  • the wet include a sol-gel method and a method of applying a fine particle dispersion or colloid solution. It is done.
  • the method for disposing the undercoat layer (D) include a method of laminating on an adjacent layer by a sputtering method, an ion plating method, a vacuum deposition method, or a pulse laser deposition method.
  • the light-transmitting conductive film of the present invention is provided with the optical adjustment layer (B) and the light-transmitting conductive layer (C) of the light-transmitting support layer (A). On the side surface, at least one layer selected from the group consisting of the undercoat layer (D) and at least one other layer (E) may be further disposed.
  • Other layers (E) are not particularly limited, and examples thereof include an adhesive layer.
  • the adhesive layer is a layer that is disposed adjacent to each other between the two layers and is disposed to adhere the two layers to each other. Although it does not specifically limit as a contact bonding layer, For example, what is normally used as a contact bonding layer in the transparent conductive film for touchscreens can be used.
  • the light-transmitting conductive film of the present invention is preferably used for touch panels.
  • the light-transmitting conductive film of the present invention is particularly preferably used for a capacitive touch panel.
  • a light-transmitting conductive film used for the production of a resistive film type touch panel is required to have a surface resistivity (sheet resistance) of about 100 to 1,000 ⁇ / sq.
  • a light-transmitting conductive film used for manufacturing a capacitive touch panel generally has a lower surface resistivity.
  • the light-transmitting conductive film of the present invention has a reduced resistivity, and is thus preferably used for the production of a capacitive touch panel. The details of the capacitive touch panel are as described in 2.
  • Capacitive touch panel of the electrostatic capacitance type touch panel ⁇ br/> invention of the present invention comprises a light transmissive, electrically-conductive film of the present invention, comprise other members according to necessity.
  • the configuration of the capacitive touch panel according to the present invention include the following configurations.
  • the protective layer (1) side is used so that the operation screen side faces, and the glass (5) side faces the side opposite to the operation screen.
  • Protective layer (2) Light transmissive conductive film of the present invention (Y-axis direction) (3) Insulating layer (4) Light transmissive conductive film of the present invention (X-axis direction) (5) Glass
  • the capacitive touch panel of the present invention is not particularly limited, for example, it can be produced by combining the above (1) to (5) and other members as required according to a usual method. it can.
  • the light transmissive conductive film of the present invention can be produced by disposing each layer as described for each layer.
  • the light-transmissive support layer (A) may be sequentially disposed on the surface on which the light-transmissive conductive layer (C) is disposed from the lower layer side, but the arrangement order is not particularly limited.
  • another layer may be disposed on one surface of a layer that is not the light-transmissive support layer (A) (for example, the light-transmissive conductive layer (C)).
  • one composite layer is obtained by arranging two or more layers adjacent to each other on the one hand, or at the same time, two or more layers are similarly disposed adjacent to each other on the other side.
  • one type of composite layer may be obtained, and these two types of composite layers may be further arranged adjacent to each other.
  • Example 1 An optical adjustment layer of an acrylate resin containing zirconia particles having an average particle diameter of 16 nm was formed on a PET resin substrate (light-transmitting support layer) having a thickness of 125 ⁇ m so as to have a thickness of 0.5 ⁇ m.
  • the average particle diameter of zirconia particles was determined by observation with a transmission electron microscope as follows. Specifically, the light transmissive conductive film was covered with a resin, the light transmissive conductive film was thinly cut perpendicularly to the film using a microtome, and the cross section was observed. Thus, the length in the long axis direction of 14 particles obtained by removing the upper 3 particles and the lower 3 particles in the long axis direction length from 20 randomly selected particles that can be visually recognized. The number average value was taken as the average particle size.
  • Ra of the optical adjustment layer was 0.7 nm.
  • a SiO 2 layer of 20 nm was formed on this optical adjustment layer by sputtering, and indium tin oxide (ITO) was formed to a thickness of 23 nm.
  • ITO indium tin oxide
  • a light transmissive conductive layer is formed by a DC magnetron sputtering method using a sintered body material made of indium oxide: 95 wt% and tin oxide: 5 wt% as a target material, and heated in the atmosphere. The light-transmitting conductive film of the present invention was finally obtained.
  • oxygen gas and argon gas are introduced into the chamber so that the oxygen partial pressure becomes 6.5 ⁇ 10 ⁇ 3 Pa.
  • the sputtering process was performed with the chamber internal pressure set to 0.3 to 0.4 Pa. Thereafter, heat treatment was performed in the atmosphere at 140 ° C. for 60 minutes to obtain a light-transmitting conductive film of the present invention. This film was evaluated by XRD and AFM.
  • XRD measurement by the thin film method was performed as follows.
  • the X-ray diffractometer was measured by a thin film method using a sample horizontal X-ray diffractometer SmartLab for thin film evaluation manufactured by Rigaku.
  • a parallel beam optical arrangement was used, and a CuK ⁇ ray (wavelength: 1.54186 ⁇ ) was used as a light source at a power of 40 kV and 30 mA.
  • the incident side slit system uses a solar slit of 5.0 °, a height control slit of 10 mm, and an incident slit of 0.1 mm, and the light receiving side slit has a parallel slit analyzer (PSA) of 0.114 deg. Was used.
  • PSA parallel slit analyzer
  • the detector used was a scintillation counter.
  • the sample stage used a porous adsorption sample holder, and the sample was adsorbed and fixed by a pump.
  • the incident side was fixed at 0.50 °, the step interval was 0.01 °, the measurement speed was 3.0 ° / min, and the measurement range was 10 ° to 60 °.
  • the average particle size of indium tin oxide was measured as follows. Using a scanning probe microscope (Shimadzu Corporation, SPM-9700), probe the 0.5 ⁇ m square measurement surface in a predetermined contact mode (OMCL-TR800-PSA-1 made by OLYMPUS Corp., spring constant 0.15 N) / M) from an image obtained by scanning. Specifically, the particle size is classified by 1 nm for indium tin oxide particles of 1 nm to 30 nm from the observed image, the number of particles integrated in each particle size is examined, and the average particle size of D50 in the particle size distribution is determined. Particle size was used.
  • the average particle diameter of indium tin oxide was 6.2 nm.
  • Comparative Example 1 An optical adjustment layer of an acrylate resin containing zirconia particles having an average particle diameter of 16 nm was formed to a thickness of 0.2 ⁇ m. Other than that was carried out similarly to Example 1, and obtained the transparent electroconductive film. As a result of evaluation by XRD, no peak derived from zirconia was detected. The average particle diameter of indium tin oxide was 6.8 nm.
  • index matching (IM) and etching property were evaluated as follows.
  • Evaluation of index matching was performed as follows. In order to form a comb pattern (2 mm width, 10 mm length) in the width direction in the vicinity of the center of the light-transmitting conductive film cut to a width of 5 cm and a length of 10 cm, the following operation was performed. One of four sides of a silicon rubber plate having a width of 5 cm and a length of 5 cm was cut into a comb pattern. The silicon rubber plate is light-transmitting conductive so that the comb-shaped pattern is placed near the center of the light-transmitting conductive film on the ITO side of the light-transmitting conductive film cut to 5 cm wide ⁇ 10 cm long Laminated to film.
  • etching resist was applied to the silicon rubber side of the light-transmitting conductive film bonded with silicon rubber, dried at 80 ° C. for 30 minutes, and then the silicon rubber plate was peeled off. As a result, a light-transmitting conductive film in which the ITO surface and the etching resist surface were exposed with the comb pattern as a boundary was obtained. This was immersed in 20% hydrochloric acid for 20 minutes to dissolve ITO. Then, it was ultrasonically treated for 10 minutes while being immersed in a 0.5 M KOH solution, and washed with water to obtain a comb pattern film of ITO. A comb pattern film was placed on white paper and black paper, and the visibility at the edge of the ITO pattern was confirmed. Evaluation was performed as follows.
  • the etching property was evaluated as follows.
  • the light transmissive conductive film was immersed in 20% hydrochloric acid, and the time until the surface resistance could not be measured was determined.
  • the immersion time was set at intervals of 10 seconds from 10 seconds to 90 seconds.
  • the etching processing completion time is 40 seconds and 50 seconds, “ ⁇ ”, when 30 seconds, 60 seconds, and 70 seconds, “ ⁇ ”, when 20 seconds and 80 seconds, “ ⁇ ”, 10 seconds, 90 seconds, and More than that was evaluated as “x”. If the etching process time is too short, or conversely too long, it is difficult to control the etching process, which is not preferable.
  • the chemical resistance was evaluated as follows.
  • the light-transmitting conductive film was immersed in 1% hydrochloric acid for 30 minutes and washed with water.
  • the ratio R / R0 of the surface resistance value R at this time and the surface resistance value R0 before being immersed in hydrochloric acid was determined.
  • R / R0 is less than 1.1
  • “ ⁇ ” when R / R0 is 1.1 or more and less than 1.2
  • ⁇ when R / R0 is 1.2 or more and 1.3.
  • it was less than “ ⁇ ” it was judged as “X” when R / R0 was 1.3 or more.
  • Light-transmissive conductive film 11 Light-transmissive support layer (A) 12 Optical adjustment layer (B) 13 Light transmissive conductive layer (C) 14 Undercoat layer (D)

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Abstract

La présente invention se rapporte à un film électroconducteur transmettant la lumière contenant (A) une couche de support transmettant la lumière, (B) une couche d'ajustement optique, et (C) une couche électroconductrice transmettant la lumière contenant de l'oxyde d'indium et d'étain, la couche d'ajustement optique (B) étant agencée, soit directement, soit avec une ou plusieurs autres couches intercalées entre, sur au moins un côté de la couche de support transmettant la lumière (A), et la couche électroconductrice transmettant la lumière (C) étant agencée sur au moins un côté de la couche de support transmettant la lumière (A) avec au moins la couche d'ajustement optique (B) interposée entre, le film électroconducteur transmettant la lumière étant caractérisé en ce que la couche d'ajustement optique (B) contient de la zircone et a une épaisseur de 0,4 à 3 µm, et en mesure de Diffraction des Rayons X (XRD) par un processus à film mince, le rapport du pic dans le voisinage de 2θ = 28° dérivé de la zircone vers le pic d'une surface (222) dérivée de l'oxyde d'étain et d'indium est de 0,1 à 1,0.
PCT/JP2013/058337 2012-03-23 2013-03-22 Film électroconducteur transmettant la lumière, procédé de production associé, utilisation correspondante WO2013141374A1 (fr)

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KR1020147014897A KR101454148B1 (ko) 2012-03-23 2013-03-22 광투과성 도전성 필름, 그 제조 방법 및 그 용도
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CN105556441A (zh) * 2013-10-17 2016-05-04 日东电工株式会社 位置传感器的制造方法及由此得到的位置传感器
JP2016136511A (ja) * 2014-12-22 2016-07-28 日東電工株式会社 透明導電性フィルム

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TWI549030B (zh) * 2014-10-20 2016-09-11 Far Eastern New Century Corp Conductive transparent laminates, patterned conductive transparent laminates and touch panels
CN104535597A (zh) * 2014-12-15 2015-04-22 惠州Tcl移动通信有限公司 触摸屏镀层的检测方法及装置
JP5860558B1 (ja) * 2015-03-20 2016-02-16 積水化学工業株式会社 光透過性導電性フィルム及びそれを有するタッチパネル
CN111338500B (zh) * 2020-02-08 2022-09-20 业成科技（成都）有限公司 改善单层触控感测装置视觉效果的堆栈结构及触控面板

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CN105556441A (zh) * 2013-10-17 2016-05-04 日东电工株式会社 位置传感器的制造方法及由此得到的位置传感器
JP2016136511A (ja) * 2014-12-22 2016-07-28 日東電工株式会社 透明導電性フィルム

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CN103858182B (zh) 2015-06-03
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