WO2013139129A1 - 阵列基板及包括该阵列基板的显示装置 - Google Patents
阵列基板及包括该阵列基板的显示装置 Download PDFInfo
- Publication number
- WO2013139129A1 WO2013139129A1 PCT/CN2012/084160 CN2012084160W WO2013139129A1 WO 2013139129 A1 WO2013139129 A1 WO 2013139129A1 CN 2012084160 W CN2012084160 W CN 2012084160W WO 2013139129 A1 WO2013139129 A1 WO 2013139129A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- array substrate
- electrode
- pixel electrode
- common electrode
- resin layer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/16—Materials and properties conductive
Definitions
- Embodiments of the present invention relate to an array substrate and a display device including the array substrate. Background technique
- the COA (Color Filter on Array) technology is a technique in which a color filter is directly prepared on an array substrate of a liquid crystal display panel.
- Figure 1 shows an array substrate of the prior art COA technology.
- a plurality of thin film transistors T are arranged in an array on the substrate S, and a color resin layer is formed between the thin film transistor T and the pixel electrode ITO, including a red resin R, a green resin G, and a blue color.
- Resin B a color resin layer is formed between the thin film transistor T and the pixel electrode ITO, including a red resin R, a green resin G, and a blue color.
- Resin B the step of accurately aligning the color filter substrate and the array substrate can be omitted, thereby significantly improving the production efficiency.
- the integration degree of the liquid crystal display panel can be improved, thereby reducing the power consumption of the liquid crystal display panel.
- Fringe Field Switching (FFS) technology is a wide viewing angle technology developed for large-size, high-definition desktop displays and LCD TV applications. LCD panels made with FFS technology have wide viewing angles and high aperture ratios. advantage.
- Fig. 2 shows a prior art FFS type liquid crystal display panel.
- the FFS type liquid crystal display panel includes an array substrate 21, a color filter substrate 22, and liquid crystal molecules 23 between the two substrates.
- a color resin layer 24 is formed on one side surface of the color filter substrate 22 facing the array substrate 21.
- the common electrode 26 is formed on the array substrate 21 below the pixel electrode 25, and an insulating layer 27 is formed between the common electrode 26 and the pixel electrode 25.
- the COA technology in the FFS liquid crystal display panel, that is, to form a colored resin layer on the surface of the array substrate on which the thin film transistor is prepared to cover the film.
- the transistor is then formed with a pixel electrode via in the colored resin layer, and finally a pixel electrode is formed on the colored resin layer.
- the color resin layer is located between the pixel electrode and the common electrode.
- the thickness of the colored resin layer is relatively thick, it is usually 1 ⁇ m to 2 ⁇ m, and the pixel structure of the FFS liquid crystal display panel needs to establish an electric field between the pixel electrode and the common electrode, and the liquid crystal molecules are deflected by the electric field, so the thick color resin is thick.
- the layer will greatly reduce the electric field strength, so that the liquid crystal molecules cannot be deflected normally, thereby reducing the aperture ratio of the FFS type liquid crystal display panel, and the COA technology cannot be directly applied to the FFS type liquid crystal display panel. Summary of the invention
- an array substrate including: a pixel electrode and a common electrode, and a color resin layer between the pixel electrode and the common electrode, wherein the color resin layer Conductive particles are dispersed.
- a display device including the above array substrate is provided.
- FIG. 1 is a schematic cross-sectional view of an array substrate of a prior art COA technology
- FIG. 2 is a schematic cross-sectional view of a prior art FFS type liquid crystal display panel
- FIG. 3 is a cross-sectional view of an array substrate in an FFS liquid crystal display panel using COA technology according to an embodiment of the present invention. detailed description
- An embodiment of the present invention provides an array substrate including: a pixel electrode and a common electrode; and a color resin layer between the pixel electrode and the common electrode, wherein the color resin layer is dispersed Conductive particles.
- Embodiments of the present invention also provide a display device including the above array substrate.
- the conductive particles are added to the color resin layer, so that the equivalent dielectric thickness of the color resin layer is effectively reduced, so that the COA technology can be applied.
- the integration degree and the production efficiency of the FFS type liquid crystal display panel can be improved, so that the display device including the array substrate has high integration degree. And production efficiency.
- the array substrate has an FFS type pixel structure, including: a substrate 301; a thin film transistor formed on the substrate 301; formed on the substrate 301 and electrically insulated from each other The gate electrode 302 and the common electrode 303; the gate insulating layer 304 covering the gate electrode 302 and the common electrode 303.
- the array substrate further includes: a patterned semiconductor layer 305 and a patterned ohmic contact layer 306 sequentially formed on the gate insulating layer 304; and a source electrode formed on the patterned ohmic contact layer 306 307 and drain electrode 308, wherein the gate electrode 302, the gate insulating layer 304, the patterned semiconductor layer 305, the patterned ohmic contact layer 306, the source electrode 307, and the drain electrode 308 together constitute the thin film transistor.
- the array substrate further includes: a color resin layer 309 covering a surface of the substrate 301 on which the thin film transistor (not shown) and the common electrode 303 are formed; and a color resin layer 309 formed in the color resin layer 309
- the pixel electrode via 310 exposing the drain electrode 308; the pixel electrode 311 formed on the surface of the color resin layer 309 and in the pixel electrode via 310, such that the color resin layer 309 is located between the pixel electrode 311 and the common electrode 303.
- the conductive particles 312 are dispersed in the colored resin layer 309.
- an electric field is formed between the pixel electrode 311 and the common electrode 303.
- the power line 313 passes through the conductive particles 312 during conduction, since the inside of the conductor is an equipotential body, It is considered that the power line bypasses the conductive particles 312 to continue to propagate, and the size and direction of the power lines are not changed, so that the equivalent dielectric thickness of the colored resin layer 309 in which the conductive particles 312 are dispersed is the same area size as the conductive particles 312 are removed. The overall average thickness of the colored resin layer.
- the thickness of the colored resin layer is In the case where the degrees are equal, the intensity of the electric field formed in the colored resin layer not containing the conductive particles is smaller than the intensity of the electric field formed by the colored resin layer containing the conductive particles. Therefore, this enables the COA technology to be applied to the FFS type liquid crystal display panel without lowering the aperture ratio of the FFS type liquid crystal display panel, and also improving the integration and production efficiency of the FFS type liquid crystal display panel.
- the size and number of the conductive particles can be appropriately selected by those skilled in the art according to the process requirements. It has been found through experiments that when the conductive particles account for 3% to 8% by mass of the color resin layer, it is ensured that the array substrate provided with the color resin layer has superior performance during operation.
- the conductive particles may be uniformly dispersed in the color resin layer, but the embodiment of the present invention is not limited thereto. .
- the conductive particles may be any one of metal particles, conductive metal oxide particles, metal-coated pigment particles, conductive metal oxide-coated pigment particles, or a combination of any two or more. It is known to those skilled in the art that the kind of the conductive particles is not limited to the above, and any other particles having an electrically conductive property capable of lowering the equivalent dielectric thickness of the colored resin layer can be used in the present invention.
- the electrically conductive metal oxide particles may be transparent electrically conductive particles.
- the light transmittance of the color resin layer in which the transparent conductive particles are dispersed is clearly higher than the light transmittance of the color resin layer in which the opaque conductive particles are dispersed.
- the material of the conductive metal oxide particles may be any one of indium tin oxide (ITO), indium oxide (IZO), aluminum oxide (AZO), indium gallium oxide (IGZO), or any two. More than one combination.
- metal-coated pigment particles or conductive metal oxide-encapsulated pigment particles In the preparation of metal-coated pigment particles or conductive metal oxide-encapsulated pigment particles, methods such as vapor phase evaporation, electroless plating, and spray coating may be employed.
- the positional relationship between the pixel electrode and the common electrode may be as shown in FIG. 3, that is, the pixel electrode 311 is disposed above the common electrode 303, or It is also possible to arrange the common electrode above the pixel electrode.
- the common electrode is disposed over the pixel electrode, the corresponding thin film transistor is also adjusted to a form in which it is electrically connected to the pixel electrode and the common electrode.
- the pixel electrode and the common electrode may both be slit-shaped electrode structures, or as shown in FIG. 3, when the pixel electrode 311 is disposed above the common electrode 303, the pixel electrode 311 is a slit-shaped electrode structure, and the common electrode 303 is a plate-shaped electrode; or when the common electrode is disposed above the pixel electrode, the common electrode is a slit-like electrode structure, and the pixel electrode is a plate electrode.
- the equivalent dielectric thickness of the color resin layer is effectively reduced, so that the COA technology can be applied to the FFS type liquid crystal display panel without being lowered.
- the aperture ratio of the FFS type liquid crystal display panel can also improve the integration degree and production efficiency of the FFS type liquid crystal display panel.
- Embodiments of the present invention also provide a display device including the above array substrate, which may be a liquid crystal panel, a liquid crystal display, or a liquid crystal television or the like. Due to the use of the above array substrate, the display device has high integration and production efficiency.
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/823,329 US20140085577A1 (en) | 2012-03-23 | 2012-11-06 | Array substrate and display device comprising the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210080930.3 | 2012-03-23 | ||
CN2012100809303A CN102654695A (zh) | 2012-03-23 | 2012-03-23 | 阵列基板及应用其的显示装置 |
Publications (1)
Publication Number | Publication Date |
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WO2013139129A1 true WO2013139129A1 (zh) | 2013-09-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2012/084160 WO2013139129A1 (zh) | 2012-03-23 | 2012-11-06 | 阵列基板及包括该阵列基板的显示装置 |
Country Status (3)
Country | Link |
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US (1) | US20140085577A1 (zh) |
CN (1) | CN102654695A (zh) |
WO (1) | WO2013139129A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202404339U (zh) * | 2012-01-12 | 2012-08-29 | 京东方科技集团股份有限公司 | 阵列基板及包括该阵列基板的显示装置 |
CN102654695A (zh) * | 2012-03-23 | 2012-09-05 | 京东方科技集团股份有限公司 | 阵列基板及应用其的显示装置 |
CN103915452B (zh) * | 2014-03-28 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
CN104090402A (zh) * | 2014-06-19 | 2014-10-08 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104952887A (zh) * | 2015-06-26 | 2015-09-30 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN110161762B (zh) * | 2019-05-23 | 2022-09-06 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板 |
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JPH09179109A (ja) * | 1995-12-26 | 1997-07-11 | Casio Comput Co Ltd | 液晶表示素子 |
CN1655021A (zh) * | 2004-02-14 | 2005-08-17 | 鸿富锦精密工业(深圳)有限公司 | 液晶显示装置 |
CN101750821A (zh) * | 2008-12-03 | 2010-06-23 | 株式会社半导体能源研究所 | 液晶显示器 |
US20110051064A1 (en) * | 2009-08-31 | 2011-03-03 | Hitachi Displays, Ltd. | Liquid crystal display device |
CN102654695A (zh) * | 2012-03-23 | 2012-09-05 | 京东方科技集团股份有限公司 | 阵列基板及应用其的显示装置 |
Family Cites Families (12)
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US5705302A (en) * | 1989-04-28 | 1998-01-06 | Seiko Epson Corporation | Color filter for liquid crystal display device and method for producing the color filter |
JPH0379109A (ja) * | 1989-08-23 | 1991-04-04 | Seiko Instr Inc | 水晶振動子実装装置 |
US5248576A (en) * | 1989-09-18 | 1993-09-28 | Idemitsu Kosan Co., Ltd. | Method of producing color filter using a micellar disruption method |
JP3556364B2 (ja) * | 1995-12-27 | 2004-08-18 | 富士通ディスプレイテクノロジーズ株式会社 | アクティブマトリクス型液晶表示パネル及び投射型表示装置 |
JPH1164885A (ja) * | 1997-08-21 | 1999-03-05 | Sharp Corp | アクティブマトリクス基板 |
JP3237667B2 (ja) * | 1999-11-12 | 2001-12-10 | 富士ゼロックス株式会社 | 光触媒を用いた新規な着膜方法およびこの方法を使用するカラーフィルターの製造方法、それに使用する電解液、ならびに製造装置 |
TW575775B (en) * | 2001-01-29 | 2004-02-11 | Hitachi Ltd | Liquid crystal display device |
CN100338765C (zh) * | 2004-03-06 | 2007-09-19 | 鸿富锦精密工业(深圳)有限公司 | 散热装置及其制备方法 |
JP2006292801A (ja) * | 2005-04-06 | 2006-10-26 | Seiko Epson Corp | 液晶装置並びに電子機器 |
JP5061505B2 (ja) * | 2006-05-25 | 2012-10-31 | 日本電気株式会社 | 横電界方式のアクティブマトリクス型液晶表示装置 |
CN102033369A (zh) * | 2009-09-25 | 2011-04-27 | 北京京东方光电科技有限公司 | Ffs型tft-lcd阵列基板的像素结构 |
CN103081108B (zh) * | 2010-09-09 | 2016-08-03 | 夏普株式会社 | 薄膜晶体管基板及其制造方法、显示装置 |
-
2012
- 2012-03-23 CN CN2012100809303A patent/CN102654695A/zh active Pending
- 2012-11-06 WO PCT/CN2012/084160 patent/WO2013139129A1/zh active Application Filing
- 2012-11-06 US US13/823,329 patent/US20140085577A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09179109A (ja) * | 1995-12-26 | 1997-07-11 | Casio Comput Co Ltd | 液晶表示素子 |
CN1655021A (zh) * | 2004-02-14 | 2005-08-17 | 鸿富锦精密工业(深圳)有限公司 | 液晶显示装置 |
CN101750821A (zh) * | 2008-12-03 | 2010-06-23 | 株式会社半导体能源研究所 | 液晶显示器 |
US20110051064A1 (en) * | 2009-08-31 | 2011-03-03 | Hitachi Displays, Ltd. | Liquid crystal display device |
CN102654695A (zh) * | 2012-03-23 | 2012-09-05 | 京东方科技集团股份有限公司 | 阵列基板及应用其的显示装置 |
Also Published As
Publication number | Publication date |
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CN102654695A (zh) | 2012-09-05 |
US20140085577A1 (en) | 2014-03-27 |
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