WO2015000260A1 - 一种像素结构、阵列基板及显示装置 - Google Patents

一种像素结构、阵列基板及显示装置 Download PDF

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Publication number
WO2015000260A1
WO2015000260A1 PCT/CN2013/088665 CN2013088665W WO2015000260A1 WO 2015000260 A1 WO2015000260 A1 WO 2015000260A1 CN 2013088665 W CN2013088665 W CN 2013088665W WO 2015000260 A1 WO2015000260 A1 WO 2015000260A1
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Prior art keywords
electrode
slit
pixel structure
layer
pixel
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PCT/CN2013/088665
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English (en)
French (fr)
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王学路
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京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Priority to US14/360,558 priority Critical patent/US9229290B2/en
Publication of WO2015000260A1 publication Critical patent/WO2015000260A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • Pixel structure array substrate and display device
  • the invention belongs to the technical field of liquid crystal display, and particularly relates to a pixel structure, an array substrate and a display device. Background technique
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • FPD main flat panel display
  • the TFT-LCD is classified into a vertical electric field type and a horizontal electric field type according to the direction of the electric field driving the liquid crystal.
  • the vertical electric field type TFT-LCD needs to form a pixel electrode on the array substrate to form a common electrode on the color filter substrate; and the horizontal electric field type TFT-LCD needs to simultaneously form the pixel electrode and the common electrode on the array substrate.
  • the horizontal electric field type TFT-LCD, especially the ADS type TFT-LCD has the advantages of wide viewing angle and high aperture ratio, and is widely used in the field of liquid crystal display technology.
  • ADS type TFT-LCDs As shown in Fig. 1, there are many different types of ADS type TFT-LCDs, but these different types of ADS type TFT-LCDs have one thing in common, that is, a horizontal electric field is formed by the plate electrodes 102 and the slit electrodes 103.
  • the plate electrode 102 may be a common electrode and the slit electrode 103 may be a pixel electrode, or vice versa.
  • the ADS type TFT-LCD includes a plate electrode 102 and a slit electrode 103 on the plate electrode 102.
  • the plate electrode 102 is disposed above the substrate 101, and the slit electrode 103 includes a strip shape.
  • the electrode portion 1031 and the slit 1032 are spaced apart from the plate electrode 102 by the insulating layer 104.
  • transparent indium tin oxide (IT0) or the like can be used.
  • the design of the slit electrode 103 of the existing one-layer structure may result in uneven electric field distribution. As can be seen in FIG.
  • the technical problem to be solved by the present invention includes providing a pixel structure, an array substrate, and a display device capable of reducing a shadow region in view of the problem that a shadow region formed in the middle of a slit electrode of an existing pixel structure is wide.
  • the technical solution adopted to solve the technical problem of the present invention is a pixel structure including a slit electrode and a plate electrode, the slit electrode including at least two layers, each layer structure including a plurality of electrode portions and adjacent electrodes a plurality of slits between the portions, the electrode portions of the upper layer structure are disposed above the slits of the lower layer structure, the projections of the electrode portions of all the layers on the substrate are not coincident, and the layers of the layers are separated by the first insulating layer
  • the plate electrode is disposed under the slit electrode and separated from the slit electrode by a second insulating layer.
  • the sum of the widths of the electrode portions of all the layers of the slit electrode of the pixel structure of the present invention is much larger than the sum of the widths of the electrode portions of the slit electrodes of the conventional pixel structure, thereby increasing the total relative area of the slit electrode and the plate electrode. Large, and thus the electric field strength between the slit electrode and the plate electrode is increased, so that the shadow region of the pixel structure can be effectively reduced.
  • all of the electrode portions of each layer structure of the slit electrode are electrically connected; and the respective layer structures of the slit electrodes are electrically connected.
  • all electrode portions of each layer structure of the slit electrode are electrically connected by a connecting strip;
  • a connecting strip or an electrode portion of each layer structure of the slit electrode is electrically connected through a via hole or a peripheral lead of the first insulating layer.
  • the slits in any one of the slit electrodes have a width of between 3 and 6 ⁇ .
  • the width of the electrode portion in any one of the slit electrodes is between 2 and 3 ⁇ .
  • the slit electrode comprises a two-layer structure.
  • the slit electrode is a pixel electrode
  • the plate electrode is a common electrode
  • the slit electrode is a common electrode, and the plate electrode is a pixel electrode.
  • the slit electrode material is indium tin oxide
  • the plate-shaped electrode material is indium tin oxide
  • the technical solution adopted to solve the technical problem of the present invention is an array substrate, including Any of the above pixel structures.
  • the array substrate of the present invention includes the above-described pixel structure, its transmittance is high.
  • the technical solution adopted to solve the technical problem of the present invention is a display device comprising the above array substrate.
  • FIG. 1 is a schematic structural view of a conventional pixel structure
  • 2 is a simulation diagram of the luminous intensity of a conventional pixel structure
  • FIG. 3 is a schematic structural diagram of a pixel structure according to Embodiment 1 of the present invention.
  • FIG. 4 is a simulation diagram of luminous intensity of a pixel structure according to Embodiment 1 of the present invention.
  • Fig. 5 is a comparison diagram of transmittance simulation of Embodiment 1 of the present invention and a conventional pixel structure.
  • reference numerals are: 101, a substrate; 102, a plate electrode; 103, a slit electrode;
  • the embodiment provides a pixel structure including a slit electrode 103 and a plate electrode 102.
  • the slit electrode 103 includes at least two layers, each layer structure includes a plurality of strip electrode portions 1031 and a plurality of slits located between adjacent electrode portions 1031
  • the electrode portion 1031 of the upper layer structure is disposed above the slit 1032 of the lower layer structure, and the projections of the electrode portions 1031 of all the layers on the substrate 101 are not overlapped; the plate electrode 102 is disposed under the slit electrode 103. And separated from the slit electrode 103 by the insulating layer 104 The structure of each layer of the slit electrode 103 is also separated by the insulating layer 104.
  • the insulating layer 104 that separates the respective layer structures of the slit electrodes 103 corresponds to the first insulating layer.
  • the insulating layer 104 that separates the plate electrode 102 from the slit electrode 103 corresponds to the second insulating layer.
  • the opposing area of the electrode portion 1031 of the slit electrode 103 and the plate electrode 102 is larger, and the slit electrode 103 and the plate electrode 102 are larger.
  • the electrode portions 1031 of the slit electrodes 103 are provided in a plurality of layers as long as the projections of the respective electrode portions 1031 on the substrate 101 are not overlapped.
  • All of the electrode portions of each layer structure of the slit electrode 103 are electrically connected.
  • the respective layers of the slit electrode 103 are electrically connected to each other.
  • each layer structure of the slit electrode 103 may include at least one connecting strip electrically connected to all the electrode portions 1031 of the layer.
  • the connecting strips of the respective layer structures of the slit electrodes 103 may be electrically connected by vias penetrating through the insulating layers 104 of the respective layers of the slit electrodes 103 or by peripheral leads.
  • the connecting strips of the respective layer structures may be electrically connected to the same end or different ends of the electrode portion 1031 as long as the layers of the slit electrodes 103 are electrically connected to each other.
  • the connecting strips of the respective layer structures can be electrically connected to the same end of the electrode portion 1031 and located at the periphery of the pixel structure, so that the wiring is simpler.
  • the width of the slit 1032 in any one of the slit electrodes 103 may be between 3 and 6 ⁇ m.
  • the width of the electrode portion 1031 in any one of the slit electrodes 103 is between 2 and 3 ⁇ m. Specifically, it can be determined according to the degree to which the process can be achieved.
  • the width of the fixed electrode portion 1031 and the slit 1032, and the sum of the widths of the electrode portions 1031 in all the layer structures of the slit electrode 103 are larger, and the smaller the sum of the widths of the slits 1032, the slit electrode 103 and the plate electrode The greater the electric field strength between 102, the higher the transmittance of the pixel structure, and the smaller the shadow region Q1.
  • the slit electrode 103 may comprise a two-layer structure (as shown in FIG. 3). In the direction away from the substrate 101, the first layer structure of the slit electrode 103 and the second layer structure of the slit electrode 103 are sequentially.
  • the slit electrode 103 of the two-layer structure is simple in fabrication process, easy to implement, and low in cost.
  • the slit electrode 103 may be a pixel electrode, and the plate electrode 102 is a common electrode. Conversely, the slit electrode 103 may also be a common electrode, and the plate electrode 102 is a pixel electrode.
  • the material of the slit electrode 103 may preferably be a transparent conductive material such as indium tin oxide, and the material of the plate electrode 102 may be a transparent conductive material such as indium tin oxide. Since the indium tin oxide material can transmit light, the aperture ratio of the pixel structure can be greatly improved, and of course other light transmissive materials are also possible.
  • FIG. 5 is a graph showing a "transmission-pixel electrode voltage" simulation curve of a conventional pixel structure and a pixel structure of the present embodiment, wherein the common electrode voltage is maintained at 0 V, and the voltage of the pixel electrode is between 0 and 6 V;
  • the simulation curve is visible (where S 1 is the transmittance curve of the existing pixel structure, and S2 is the transmittance curve of the pixel structure of the present embodiment), after the voltage of the pixel electrode is increased to about 5 V, the embodiment is The transmittance of the pixel structure exceeds the transmittance of the existing pixel structure.
  • the pixel structure further includes a storage capacitor (not shown), and the storage charge of the storage capacitor increases while the transmittance is increased, which contributes to charging and discharging of the pixel structure.
  • Example 2
  • the embodiment provides an array substrate.
  • the array substrate of this embodiment includes the pixel structure described in Embodiment 1.
  • the present embodiment provides a display device.
  • the display device of this embodiment includes the array substrate described in Embodiment 2.
  • the display device can be any product or component having a display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the display device of this embodiment has the array substrate of the second embodiment, so that the shadow region Q1 is reduced, the transmittance is higher, and the display effect of the screen is better.

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Abstract

提供一种像素结构、阵列基板及显示装置，属于液晶显示技术领域，可解决现有的像素结构的狭缝电极中间形成的暗影区较宽的问题。提供的像素结构，包括狭缝电极（103）和板状电极（102），狭缝电极（103）包括至少两层结构，每层结构包括多个电极部（1031）以及位于相邻的电极部（1031）之间的多个狭缝（1032）,上层结构的电极部（1031）设于下层结构的狭缝（1032）上方，且所有各层的电极部（1031）在阵列基板（101）上的投影均不重合；板状电极（102）设于狭缝电极（103）下方，且与狭缝电极（103）通过绝缘层（104）隔开。

Description

一种像素结构、 阵列基板及显示装置 技术领域
本发明属于液晶显示技术领域， 具体涉及一种像素结构、 阵列 基板及显示装置。 背景技术
薄膜晶体管液晶显示装置 （Thin Fi lm Transistor Liquid Crystal Display, 简称 TFT-LCD)是一种主要的平板显示装置（Flat Panel Display, 简称 FPD) 。
根据驱动液晶的电场方向， TFT-LCD分为垂直电场型和水平电场 型。其中， 垂直电场型 TFT-LCD需要在阵列基板上形成像素电极， 在 彩膜基板上形成公共电极；而水平电场型 TFT-LCD需要在阵列基板上 同时形成像素电极和公共电极。 水平电场型 TFT-LCD, 尤其是 ADS型 TFT-LCD具有广视角、 开口率高等优点， 广泛应用于液晶显示技术领 域。
如图 1所示， ADS型 TFT-LCD有多种不同类型，但这些不同类型 的 ADS型 TFT-LCD都有一个共同点，即通过板状电极 102和狭缝电极 103形成水平电场。 其中板状电极 102可为公共电极而狭缝电极 103 可为像素电极， 或者也可反之。
结合图 2所示， ADS型 TFT-LCD包括板状电极 102和位于板状电 极 102上的一层狭缝电极 103，其中板状电极 102设于基底 101上方， 狭缝电极 103包括条状的电极部 1031和狭缝 1032且与板状电极 102 通过绝缘层 104隔开。狭缝电极 103和板状电极 102的材料均可采用 透明的氧化铟锡 （IT0) 等。 但现有的一层结构的狭缝电极 103设计 会导致电场分布不均匀，在图 2中可以看出，在狭缝电极 103的狭缝 1032所对应的位置处会形成较宽的暗影区 Ql， 导致透过率下降， 引 起使用者对产品性能的满意度降低。 发明内容 本发明所要解决的技术问题包括， 针对现有的像素结构的狭缝 电极中间形成的暗影区较宽的问题，提供一种可以减少暗影区的像素 结构、 阵列基板及显示装置。
解决本发明技术问题所采用的技术方案是一种像素结构， 包括 狭缝电极和板状电极，所述狭缝电极包括至少两层结构，每层结构包 括多个电极部以及位于相邻的电极部之间的多个狭缝，上层结构的电 极部设于下层结构的狭缝上方，所有各层的电极部在基底上的投影均 不重合，且各层结构之间通过第一绝缘层隔开；所述板状电极设于狭 缝电极下方， 且与狭缝电极间通过第二绝缘层隔开。
本发明的像素结构的狭缝电极的所有层的电极部宽度之和远大 于现有的像素结构的狭缝电极的电极部宽度之和，因而使得狭缝电极 与板状电极的总相对面积增大，进而使得狭缝电极与板状电极间的电 场强度增大， 从而可以有效地减少像素结构的暗影区。
优选的是所述狭缝电极的每层结构的所有电极部电连接； 所述 狭缝电极的各层结构之间电连接。
进一步优选的是， 所述狭缝电极的每层结构的所有电极部通过 连接条电连接；
所述狭缝电极的各层结构的连接条或电极部通过所述第一绝缘 层的过孔或外围引线电连接。
优选的是，所述狭缝电极任意一层结构中的狭缝的宽度均在 3~6 μπι之间。
优选的是，所述狭缝电极任意一层结构中的电极部宽度均在 2~3 μπι之间。
优选的是， 所述狭缝电极包括两层结构。
进一步优选的是， 所述狭缝电极为像素电极， 所述板状电极为 公共电极， 或
所述狭缝电极为公共电极， 所述板状电极为像素电极。
进一步优选的是， 所述狭缝电极材料为氧化铟锡， 所述板状电 极材料为氧化铟锡。
解决本发明技术问题所采用的技术方案是一种阵列基板， 包括 上述任意一种像素结构。
由于本发明的阵列基板包括上述像素结构， 故其透过率高。 解决本发明技术问题所采用的技术方案是一种显示装置， 包括 上述阵列基板。
由于该显示装置包括上述阵列基板， 故其显示效果更好。 附图说明
图 1为现有的像素结构的结构示意图；
图 2为现有的像素结构的发光强度的仿真图；
图 3为本发明的实施例 1的像素结构的结构示意图；
图 4为本发明的实施例 1的像素结构的发光强度的仿真图； 以 及，
图 5为本发明的实施例 1与现有的像素结构的透过率仿真比较 图。
其中附图标记为： 101、基底； 102、 板状电极； 103、 狭缝电极；
1031、 电极部； 1032、 狭缝； 104、 绝缘层； Ql、 暗影区； Sl、 现有 的像素结构的透过率曲线； S2、本发明的实施例 1的像素结构的透过 率曲线。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结合 附图和具体实施方式对本发明作进一步详细描述。 实施例 1 :
结合图 3所示，本实施例提供一种像素结构，包括狭缝电极 103 和板状电极 102， 所述狭缝电极 103包括至少两层结构， 每层结构包 括多个条状电极部 1031以及位于相邻的电极部 1031之间的多个狭缝
1032 ,上层结构的电极部 1031设于下层结构的狭缝 1032上方，且所 有各层的电极部 1031在基底 101上的投影均不重合； 所述板状电极 102设于狭缝电极 103下方，且与狭缝电极 103间通过绝缘层 104隔 开， 当然狭缝电极 103的各层结构间也通过绝缘层 104隔开。将狭缝 电极 103的各层结构隔开的绝缘层 104对应于第一绝缘层。将板状电 极 102与狭缝电极 103隔开的绝缘层 104对应于第二绝缘层。尽管为 描述方便起见在图 3中仅示出了两层结构的狭缝电极，然而本领域技 术人员将会理解， 还可以采用具有三层或更多层结构的狭缝电极。
在像素结构中， 在保证同一层结构中的狭缝宽度不减小的情况 下， 狭缝电极 103的电极部 1031与板状电极 102的相对面积越大， 狭缝电极 103与板状电极 102间的电场强度就越大，进而可以使得像 素结构的暗影区 Q1减小 （如图 4所示） 。 本实施例将狭缝电极 103 的电极部 1031设置为多层，只要各电极部 1031在基底 101上的投影 无重合即可。 很容易看出多层的电极部 1031在基底 101上的投影的 宽度之和大于现有的像素结构的狭缝电极 103的电极部 1031宽度之 和（也可以理解为本实施例的狭缝电极 103是在现有的一层结构的狭 缝电极 103的狭缝 1032上方增加额外的电极部 1031 )， 故其狭缝电 极 103与板状电极 102间的电场强度也较大，从而可以有效地减小暗 影区 Q1分布， 提高透过率。
所述狭缝电极 103 的每层结构的所有电极部电连接。 所述狭缝 电极 103的各层结构之间电连接。
其中， 所述狭缝电极 103 的每层结构可以包括至少一个与该层 的所有电极部 1031电连接的连接条。
所述狭缝电极 103 的各层结构的连接条可以通过贯穿狭缝电极 103各层结构间的绝缘层 104的过孔电连接或通过外围引线实现电连 接。
一般各层结构的连接条可与电极部 1031的同一端或不同端电连 接， 只要保证所述狭缝电极 103的各层结构是相互电连接即可。
当然各层结构的连接条可与电极部 1031的同一端电连接且位于 像素结构的周边， 这样布线更简单。
优选的， 所述狭缝电极 103任意一层结构中的狭缝 1032的宽度 均可以在 3~6 μηι之间。 所述狭缝电极 103任意一层结构中的电极部 1031的宽度均在 2~3 μηι之间。具体可以根据工艺能够实现的程度决 定电极部 1031与狭缝 1032的宽度，狭缝电极 103的所有层结构中的 电极部 1031的宽度之和越大，狭缝 1032的宽度之和越小，则狭缝电 极 103与板状电极 102间的电场强度越大， 像素结构的透过率越高， 暗影区 Q1越小。
优选的， 所述狭缝电极 103可以包括两层结构 （如图 3所示） 。 在远离基底 101方向依次为，狭缝电极 103的第一层结构，狭缝电极 103的第二层结构。 两层结构的狭缝电极 103在制作工艺上简单， 容 易实现， 成本较低。
优选的，所述狭缝电极 103可以为像素电极，所述板状电极 102 为公共电极。反过来， 所述狭缝电极 103也可以为公共电极， 所述板 状电极 102为像素电极。
其中， 所述狭缝电极 103 的材料优选可以为氧化铟锡等透明导 电材料， 所述板状电极 102 的材料也可以为氧化铟锡等透明导电材 料。 因为氧化铟锡材料可以透光， 可以大大提高像素结构的开口率， 当然其他的透光材料也是可以的。
图 5示出了现有像素结构和本实施例像素结构的 "透过率 -像素 电极电压"模拟曲线， 其中公共电极电压保持 0 V， 而像素电极的电 压在 0~6 V； 通过两条模拟曲线可见 （其中 S 1为现有的像素结构的 透过率曲线， S2 为本实施例的像素结构的透过率曲线） ， 在像素电 极的电压增加到约 5 V之后，本实施例的像素结构的透过率即超过了 现有像素结构的透过率。
其中， 像素结构还包括存储电容 （图中未示出） ， 在透过率提 高的同时存储电容的存储电荷增加， 有助于像素结构的充放电。 实施例 2 :
本实施例提供一种阵列基板，本实施例的阵列基板包括实施例 1 所述的像素结构。
当然， 在阵列基板中还应具有薄膜晶体管、 扫描线等其他的已 知结构， 在此不再详细描述。
由于本实施例的阵列基板具有实施例 1 所述的像素结构， 故其 可用于实现高质量的显示。 实施例 3
本实施例提供一种显示装置，本实施例的显示装置包括实施例 2 所述的阵列基板。 该显示装置可以为： 手机、 平板电脑、 电视机、 显 示器、笔记本电脑、数码相框、 导航仪等任何具有显示功能的产品或 部件。
本实施例的显示装置中具有实施例 2 中的阵列基板， 故其暗影 区 Q1减小， 具有更高的透过率， 画面的显示效果更好。
当然， 本实施例的显示装置中还可以包括其他常规结构， 如电 源单元、 显示驱动单元等。 可以理解的是， 以上实施方式仅仅是为了说明本发明的原理而 采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的 普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做 出各种变型和改进， 这些变型和改进也视为本发明的保护范围。

Claims

权利要求
1. 一种像素结构， 包括狭缝电极和板状电极， 其特征在于， 所述狭缝电极包括至少两层结构， 每层结构包括多个条状的电 极部以及位于相邻的电极部之间的多个狭缝，上层结构的电极部设于 下层结构的狭缝上方，所有各层结构的电极部在基底上的投影均不重 合， 且各层结构之间通过第一绝缘层隔开；
所述板状电极设于狭缝电极下方， 且与狭缝电极间通过第二绝 缘层隔开。
2. 根据权利要求 1所述的像素结构， 其特征在于， 所述狭缝电 极的每层结构的所有电极部电连接；
所述狭缝电极的各层结构之间电连接。
3. 根据权利要求 2所述的像素结构， 其特征在于， 所述狭缝电 极的每层结构中的所有电极部通过连接条电连接；
所述狭缝电极的各层结构的连接条或电极部通过贯穿所述第一 绝缘层的过孔或外围引线电连接。
4. 根据权利要求 1所述的像素结构， 其特征在于， 所述狭缝电 极任意一层结构中的狭缝的宽度均在 3~6 μιη之间。
5. 根据权利要求 1所述的像素结构， 其特征在于， 所述狭缝电 极任意一层结构中的电极部宽度均在 2~3 μηι之间。
6. 根据权利要求 1所述的像素结构， 其特征在于， 所述狭缝电 极包括两层结构。
7. 根据权利要求 1~6中任意一项所述的像素结构，其特征在于， 所述狭缝电极为像素电极， 所述板状电极为公共电极， 或
所述狭缝电极为公共电极， 所述板状电极为像素电极。
8. 根据权利要求 1~6中任意一项所述的像素结构，其特征在于， 所述狭缝电极材料为氧化铟锡， 所述板状电极材料为氧化铟锡。
9. 一种 TFT-LCD阵列基板， 其特征在于， 包括权利要求广 8中 任意一项所述的像素结构。
10. 一种显示装置， 其特征在于， 包括权利要求 9所述的阵列 基板。
PCT/CN2013/088665 2013-07-02 2013-12-05 一种像素结构、阵列基板及显示装置 WO2015000260A1 (zh)

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