WO2013123890A1 - 一种广视角液晶显示器 - Google Patents

一种广视角液晶显示器 Download PDF

Info

Publication number
WO2013123890A1
WO2013123890A1 PCT/CN2013/071755 CN2013071755W WO2013123890A1 WO 2013123890 A1 WO2013123890 A1 WO 2013123890A1 CN 2013071755 W CN2013071755 W CN 2013071755W WO 2013123890 A1 WO2013123890 A1 WO 2013123890A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
liquid crystal
crystal display
insulating layer
viewing angle
Prior art date
Application number
PCT/CN2013/071755
Other languages
English (en)
French (fr)
Inventor
胡君文
李林
洪胜宝
陈天佑
谢凡
何基强
Original Assignee
信利半导体有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信利半导体有限公司 filed Critical 信利半导体有限公司
Publication of WO2013123890A1 publication Critical patent/WO2013123890A1/zh

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134372Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned

Definitions

  • the invention relates to a Chinese patent application filed on February 22, 2012, the Chinese Patent Application No. 201210041338.2, the priority of which is entitled “a wide viewing angle liquid crystal display", the entire contents of which are incorporated by reference. In this application.
  • Technical field
  • the present application relates to the field of liquid crystal display technologies, and in particular, to a wide viewing angle liquid crystal display. Background technique
  • liquid crystal displays have developed toward a wide viewing angle and high contrast on a display screen. Contrast is the ratio of black and white on the screen, that is, the gradient from black to white. The larger the ratio, the more gradients from black to white, and the richer the color.
  • the degree of discoloration of the display screen is very low, that is, the viewing angle of the liquid crystal display is relatively large.
  • the high-contrast IPS (In-Plance Switching) technology with VCOM electrodes and pixel electrodes on the same substrate can achieve high contrast.
  • the thickness of the entire LCD cell should be kept as much as possible.
  • a TFT (Thin Film Transistor) structure is formed on the entire substrate to form an array substrate, which is difficult to planarize. Therefore, it is difficult to achieve uniform thickness by laminating the array substrate and the CF (Color Filter) substrate to form a liquid crystal cell.
  • the embodiment of the present application provides a wide viewing angle liquid crystal display to achieve uniform thickness of the liquid crystal cell in the wide viewing angle liquid crystal display.
  • the technical solution is as follows:
  • a wide viewing angle liquid crystal display comprising:
  • a gate layer disposed on the substrate
  • a gate insulating layer covering the gate layer and the substrate not covered by the gate layer; an active layer disposed on the gate insulating layer and above the gate layer;
  • drain source layer disposed on the active layer
  • planarization insulating layer disposed on the drain-source layer, the planarization insulating layer being in the same upper surface a horizontal plane, and the pixel electrode layer is disposed on the planarization insulating layer;
  • An insulating layer disposed on the pixel electrode layer and on the planarization insulating layer not covered by the pixel electrode layer;
  • a common electrode disposed on the insulating layer.
  • the substrate is a glass substrate.
  • the material of the active layer is monocrystalline silicon.
  • the material of the gate layer is metal.
  • the material of the drain source layer is metal.
  • the material of the gate insulating layer is silicon nitride.
  • the insulating layer is made of silicon nitride.
  • the material of the planarization insulating layer is a phenolic resin.
  • the pixel electrode layer is an indium tin oxide ITO electrode.
  • the common electrode is an indium tin oxide ITO electrode.
  • the wide viewing angle liquid crystal display screen has a flattening insulating layer formed into a flattening film layer whose upper surface is in the same horizontal plane, thereby making the thickness of the liquid crystal cell uniform, thereby ensuring application of the
  • the wide-view liquid crystal display of the thin film field effect transistor displays a wide viewing angle of the picture and a high contrast performance index.
  • FIG. 1 is a schematic diagram of a main structure of a wide viewing angle liquid crystal display according to an embodiment of the present application.
  • the wide viewing angle liquid crystal display mainly includes: a substrate 1, a gate layer 2, a gate insulating layer 3, and an active layer. 4.
  • the planarization insulating layer 6 constitutes a thin film field effect transistor.
  • the substrate 1 is located at the bottommost layer, and the gate layer 2 is disposed on the substrate 1.
  • a gate insulating layer 3 is overlaid on the gate layer 2, and on the substrate 1 where the gate layer 2 is not provided, which is used to insulate the gate layer 2 and other layers.
  • the active layer 4 is disposed on the gate insulating layer 3, and the pattern of the active layer 4 is located directly above the gate layer 2.
  • the source and drain layers are overlying the active layer 4, and the gate insulating layer 3, and the source and drain layers comprise left and right portions that are not connected to each other, wherein the left half is the source layer 51 and the right half.
  • the drain layer 52 the source layer 51 and the drain layer 52 are separated by the planarization insulating layer 6.
  • a planarization insulating layer 6 is overlaid on the source/drain layer 5, a pixel electrode layer 7 is disposed on the planarization insulating layer 6, and a bottom layer of the pixel electrode layer 7 is electrically connected to the drain layer 52.
  • the lower surface of the planarization insulating layer 6 has the same shape as the source and drain layers, specifically a trapezoidal structure having a plurality of steps, and the upper surface is a planar structure at the same horizontal plane.
  • a gate pattern is sequentially formed on the substrate 1, that is, a gate layer 2, a gate insulating layer 3 is formed on the gate layer 2, an active layer 4, a source and drain layer 5 are formed on the gate insulating layer 3, and then Forming a planarization insulating layer 6 whose upper surface is flattened on the source drain layer, and forming a via hole on the planarization insulating layer 6 on the drain layer 52, and finally forming a pixel electrode layer 7 on the via hole, and Ensure the pixel electrode layer.
  • an insulating layer 8 is formed, and a common electrode 9 is formed on the insulating layer.
  • the gate insulating layer 3 and the insulating layer 8 in the embodiment of the present application are all realized by an insulating material, and specifically can be realized by using a silicon nitride material.
  • the planarization insulating layer 6 may be made of a resin material, specifically a phenol resin.
  • the substrate 1 in the implementation of the present application may be implemented by using a glass substrate, the material of the active layer 4 may be single crystal silicon, and the gate layer 2 and the gate insulating layer 3 are made of a low-resistance conductive metal.
  • the pixel electrode layer 7 in the embodiment of the present application is specifically implemented by using an ITO (Indium-Tin Oxide) conductive film, and the common electrode 9 is realized by using an ITO conductive film.
  • ITO Indium-Tin Oxide
  • the thin film field effect transistor when an input voltage is supplied to the gate layer, the thin film field effect transistor is turned on, so that the data line can transmit the signal to the pixel electrode layer 7 through the thin film field effect transistor, when the thin film field
  • the effect tube when the effect tube is turned off, the amount of electric power on the pixel electrode layer 7 is stored in the storage capacitor formed by the common electrode in the pixel electrode layer 7 and the wide viewing angle liquid crystal display, thereby achieving the purpose of displaying a picture.
  • the wide viewing angle liquid crystal display screen flattens the insulating layer into a flattening film layer whose upper surface is in the same horizontal plane, so that the thickness of the liquid crystal cell is evenly hooked, thereby ensuring a wide viewing angle liquid crystal display using the thin film field effect transistor, and displaying Wide viewing angle and high contrast performance of the picture.

Abstract

一种广视角液晶显示器,包括;玻璃基板(1)、栅极层(2)、栅极绝缘层(3)、有源层(4)、源漏极层(5)、平坦化绝缘层(6)、像素电极层(7)、绝缘层(8)及公共电极(9),其中,平坦化绝缘层(6)为表面处于同一水平平面的平坦化膜层。从而,得到厚度均匀的液晶盒,进而,确保应用该薄膜场效应晶体管的广视角液晶显示器,显示画面的广视角和高对比度的性能指标。

Description

一种广视角液晶显示器 本申请要求于 2012年 2月 22日提交中国专利局、 申请号 201210041338.2, 发明名称为 "一种广视角液晶显示器"的中国专利申请的优先权, 其全部内容 通过引用结合在本申请中。 技术领域
本申请涉及液晶显示器技术领域, 特别是涉及一种广视角液晶显示器。 背景技术
随着液晶显示技术的发展,液晶显示器在显示画面上朝向广视角和高对比 度发展。对比度是画面黑与白的比值,也就是从黑到白的渐变层次,比值越大, 从黑到白的渐变层次就越多, 色彩表现越丰富。 广视角是从液晶显示器侧面看 时, 显示画面的变色程度很低, 也就是液晶显示器的视角比较大。
采用 VCOM电极和像素电极位于同一片底板上的广视角 IPS ( In-Plance Switching, 平面转换)技术, 可以达到高对比度, 但是, 要保持整个显示画面 的一致性就要求整个液晶盒的厚度尽量保持一致, 而传统的液晶盒的制作技 术, 在整个基板上分布着 TFT ( Thin Film Transistor, 薄膜场效应晶体管)结构 形成阵列基板, 艮难做到平坦化。 因此, 将所述阵列基板和 CF ( Color Filter, 彩色滤光片 )基板贴合形成液晶盒, 4艮难做到厚度一致。
发明内容
为解决上述技术问题, 本申请实施例提供一种广视角液晶显示器, 以实现 广视角液晶显示器内的液晶盒的厚度均匀一致, 技术方案如下:
一种广视角液晶显示器, 包括:
位于底层的基板;
设置在所述基板上的栅极层;
覆盖在所述栅极层和未被所述栅极层覆盖的所述基板上的栅极绝缘层; 设置在所述栅极绝缘层上, 且位于所述栅极层上方的有源层;
设置在所述有源层上的漏源极层;
设置在所述漏源极层上的平坦化绝缘层,该平坦化绝缘层为上表面处于同 一水平平面, 且该平坦化绝缘层的上设置有像素电极层;
设置在所述像素电极层 ,以及未被所述像素电极层覆盖的所述平坦化绝缘 层上的绝缘层;
设置在所述绝缘层上的公共电极。
优选的, 所述基板为玻璃基板。
优选的, 所述有源层的材质为单晶硅。
优选的, 所述栅极层的材质为金属。
优选的, 所述漏源极层的材质为金属。
优选的, 所述栅极绝缘层的材质为氮化硅。
优选的, 所述绝缘层的材质为氮化硅。
优选的, 所述平坦化绝缘层的材质为酚酸树脂。
优选的, 所述像素电极层为氧化铟锡 ITO电极。
优选的, 所述公共电极为氧化铟锡 ITO电极。
由以上本申请实施例提供的技术方案可见,所述广视角液晶显示屏将平坦 化绝缘层做成上表面处于同一水平平面的平坦化膜层,从而使得液晶盒的厚度 均匀, 进而确保应用该薄膜场效应晶体管的广视角液晶显示器,显示画面的广 视角和高对比度的性能指标。
附图说明 为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施 例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地, 下面描述 中的附图仅仅是本申请中记载的一些实施例, 对于本领域普通技术人员来讲, 在不付出创造性劳动的前提下, 还可以根据这些附图获得其他的附图。 图 1为本申请实施例一种广视角液晶显示器的主要结构的示意图。 具体实施方式 为了使本技术领域的人员更好地理解本申请中的技术方案,下面将结合本 申请实施例中的附图, 对本申请实施例中的技术方案进行清楚、 完整地描述, 显然, 所描述的实施例仅仅是本申请一部分实施例, 而不是全部的实施例。 基 于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获 得的所有其他实施例, 都应当属于本申请保护的范围。
请参见图 1 , 示出了本申请实施例提供的一种广视角液晶显示器的主要结 构示意图, 该广视角液晶显示器主要包括: 基板 1、 栅极层 2、 栅极绝缘层 3、 有源层 4、 源漏极层 5、 平坦化绝缘层 6、 像素电极层 7, 绝缘层 8及公共电极 9, 其中, 栅极层 2、 栅极绝缘层 3、 有源层 4、 源漏极层 5和平坦化绝缘层 6构成了 薄膜场效应晶体管。
所述基板 1位于最底层,栅极层 2设置在基板 1上。栅极绝缘层 3覆盖在栅极 层 2上, 以及未设置栅极层 2的基板 1上, 该栅极绝缘层 3用于绝缘隔离栅极层 2 和其他层。
有源层 4设置在栅极绝缘层 3上, 且有源层 4的图形是位于栅极层 2的正上 方。 源漏极层覆盖在有源层 4上, 以及栅极绝缘层 3上, 且该源漏极层包括互不 连接的左右两部分, 其中, 位于左半部分为源极层 51、 右半部分为漏极层 52, 源极层 51和漏极层 52之间被所述平坦化绝缘层 6隔离开。
平坦化绝缘层 6覆盖在所述源漏极层 5上, 像素电极层 7设置在平坦化绝缘 层 6上, 且该像素电极层 7的底层与漏极层 52电连接。 所述平坦化绝缘层 6的下 表面的与源漏极层的形状相同, 具体为具有多级台阶的梯形结构, 上表面为处 于同一水平面的平面结构。
本申请实施例提供的广视角液晶显示器中的薄膜场效应晶体管的传统结 构并未改变, 具体的加工流程如下:
在基板 1上依次形成栅极图形,即栅极层 2,在栅极层 2上成膜栅极绝缘层 3 , 在栅极绝缘层 3上形成有源层 4、 源漏极层 5 , 然后, 在源漏极层上形成上表面 平坦化的平坦化绝缘层 6, 并在位于漏极层 52上的平坦化绝缘层 6上形成过孔, 最后在过孔上形成像素电极层 7, 且保证像素电极层。
在像素电极层 7, 以及未形成像素电极层 7的平坦化绝缘层 6上, 形成绝缘 层 8, 在绝缘层上形成公共电极 9。
本领域技术人员可以理解的是,本申请实施例中的栅极绝缘层 3和绝缘层 8 均采用绝缘材料实现, 具体可以采用氮化硅材料实现。 而平坦化绝缘层 6可以 采用树脂材料, 具体采用酚醛树脂。 本申请实施中的所述基板 1可以采用玻璃基板实现,所述有源层 4的材料可 以为单晶硅, 栅极层 2和栅极绝缘层 3采用低电阻的导电金属制成。
本申请实施例中的像素电极层 7具体采用 ITO ( Indium-Tin Oxide, 氧化铟 锡)导电膜实现, 而且, 所述公共电极 9采用 ITO导电膜实现。
上述的广视角液晶显示器的工作原理, 当为栅极层提供一输入电压时, 薄 膜场效应晶体管导通,使得数据线可以通过薄膜场效应晶体管将信号传输至像 素电极层 7上, 当薄膜场效应管截止时,像素电极层 7上的电量存储在该像素电 极层 7和广视角液晶显示器内的通用电极形成的存储电容中, 从而, 达到显示 画面的目的。
所述广视角液晶显示屏将平坦化绝缘层做成上表面处于同一水平平面的 平坦化膜层,从而使得液晶盒的厚度均勾, 进而确保应用该薄膜场效应晶体管 的广视角液晶显示器, 显示画面的广视角和高对比度的性能指标。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通 技术人员来说, 在不脱离本申请原理的前提下, 还可以做出若干改进和润饰, 这些改进和润饰也应视为本申请的保护范围。
+

Claims

权 利 要 求
1、 一种广视角液晶显示器, 其特征在于, 包括:
位于底层的基板;
设置在所述基板上的栅极层;
覆盖在所述栅极层和未被所述栅极层覆盖的所述基板上的栅极绝缘层; 设置在所述栅极绝缘层上, 且位于所述栅极层上方的有源层;
设置在所述有源层上的漏源极层;
设置在所述漏源极层上的平坦化绝缘层,该平坦化绝缘层为上表面处于同 一水平平面, 且该平坦化绝缘层的上设置有像素电极层;
设置在所述像素电极层,以及未被所述像素电极层覆盖的所述平坦化绝缘 层上的绝缘层;
设置在所述绝缘层上的公共电极。
2、 根据权利要求 1所述的广视角液晶显示 其特征在于, 所述基板为 玻璃基板。
3、 根据权利要求 1所述的广视角液晶显示 其特征在于, 所述有源层 的材质为单晶硅。
4、 根据权利要求 1所述的广视角液晶显示 , 其特征在于, 所述栅极层 的材质为金属。
5、 根据权利要求 1所述的广视角液晶显示 , 其特征在于, 所述漏源极 层的材质为金属。
6、 根据权利要求 1所述的广视角液晶显示 , 其特征在于, 所述栅极绝 缘层的材质为氮化硅。
7、 根据权利要求 1所述的广视角液晶显示 , 其特征在于, 所述绝缘层 的材质为氮化硅。
8、 根据权利要求 1所述的广视角液晶显示 , 其特征在于, 所述平坦化 绝缘层的材质为酚醛树脂。
9、 根据权利要求 1所述的广视角液晶显示 ¾, 其特征在于, 所述像素电 极层为氧化铟锡 ITO电极。
10、 根据权利要求 1所述的广视角液晶显示器, 其特征在于, 所述公共电 极为氧化铟锡 ITO电极
+
PCT/CN2013/071755 2012-02-22 2013-02-22 一种广视角液晶显示器 WO2013123890A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210041338.2 2012-02-22
CN2012100413382A CN102540539A (zh) 2012-02-22 2012-02-22 一种广视角液晶显示器

Publications (1)

Publication Number Publication Date
WO2013123890A1 true WO2013123890A1 (zh) 2013-08-29

Family

ID=46347780

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/071755 WO2013123890A1 (zh) 2012-02-22 2013-02-22 一种广视角液晶显示器

Country Status (2)

Country Link
CN (1) CN102540539A (zh)
WO (1) WO2013123890A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102540539A (zh) * 2012-02-22 2012-07-04 信利半导体有限公司 一种广视角液晶显示器
CN106997130B (zh) 2017-04-05 2018-06-15 惠科股份有限公司 一种显示面板及其制程和显示装置
CN107482020A (zh) * 2017-08-21 2017-12-15 京东方科技集团股份有限公司 一种阵列基板及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101369081A (zh) * 2007-08-16 2009-02-18 爱普生映像元器件有限公司 液晶显示装置
CN101533186A (zh) * 2008-01-11 2009-09-16 爱普生映像元器件有限公司 液晶装置及电子设备
CN101174068B (zh) * 2006-10-31 2011-02-09 索尼公司 主动矩阵型液晶显示装置
CN102147549A (zh) * 2010-02-10 2011-08-10 索尼公司 液晶显示面板及电子设备
CN102540539A (zh) * 2012-02-22 2012-07-04 信利半导体有限公司 一种广视角液晶显示器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100682893B1 (ko) * 2004-10-13 2007-02-15 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
CN100412657C (zh) * 2005-09-08 2008-08-20 中华映管股份有限公司 液晶显示面板及彩色滤光基板的制造方法
US8284355B2 (en) * 2006-11-30 2012-10-09 Sharp Kabushiki Kaisha Active matrix substrate having spacers, liquid crystal display panel having spacers, liquid crystal display element, liquid crystal display device, and substrate for liquid crystal display panels
KR101448668B1 (ko) * 2007-07-05 2014-10-08 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 갖는 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174068B (zh) * 2006-10-31 2011-02-09 索尼公司 主动矩阵型液晶显示装置
CN101369081A (zh) * 2007-08-16 2009-02-18 爱普生映像元器件有限公司 液晶显示装置
CN101533186A (zh) * 2008-01-11 2009-09-16 爱普生映像元器件有限公司 液晶装置及电子设备
CN102147549A (zh) * 2010-02-10 2011-08-10 索尼公司 液晶显示面板及电子设备
CN102540539A (zh) * 2012-02-22 2012-07-04 信利半导体有限公司 一种广视角液晶显示器

Also Published As

Publication number Publication date
CN102540539A (zh) 2012-07-04

Similar Documents

Publication Publication Date Title
WO2013127236A1 (zh) 阵列基板及其制造方法以及显示装置
WO2013104300A1 (zh) 阵列基板及包括该阵列基板的显示装置
CN103309100B (zh) 液晶显示装置及其制造方法
US9195100B2 (en) Array substrate, liquid crystal panel and display device with pixel electrode and common electrode whose projections are overlapped
WO2015039389A1 (zh) 阵列基板及其制作方法、显示装置
WO2013086906A1 (zh) Tft阵列基板及其制作方法和显示装置
WO2019119714A1 (zh) 阵列基板、液晶面板以及液晶显示装置
WO2017121009A1 (zh) Ips型tft-lcd阵列基板的制作方法及ips型tft-lcd阵列基板
CN103278986B (zh) 一种阵列基板、显示装置及阵列基板的制造方法
WO2015000260A1 (zh) 一种像素结构、阵列基板及显示装置
US9110340B2 (en) Array substrate, liquid crystal panel and liquid crystal display device comprising protrusion electrode parts
CN105093756A (zh) 液晶显示像素结构及其制作方法
WO2017049865A1 (zh) 阵列基板、显示装置及其制作方法
WO2019010996A1 (zh) 阵列基板及显示装置
WO2018120570A1 (zh) 一种显示面板制程
US10101615B2 (en) Array substrate and manufacturing method thereof, liquid crystal panel and display device
CN101750823A (zh) 显示装置
WO2013123890A1 (zh) 一种广视角液晶显示器
US9703152B2 (en) Liquid crystal display device
CN104733478A (zh) 一种阵列基板及其制作方法、显示装置
KR102004956B1 (ko) 표시 장치
TW201037439A (en) Array substrate for FFS type LCD panel and method for manufacturing the same
KR101318247B1 (ko) 액정표시장치 및 그의 제조방법
US20140022494A1 (en) Liquid crystal display
JP2006208530A (ja) 液晶表示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13751660

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 30.01.2015)

122 Ep: pct application non-entry in european phase

Ref document number: 13751660

Country of ref document: EP

Kind code of ref document: A1