WO2017124810A1 - 阵列基板、液晶显示面板及显示装置 - Google Patents

阵列基板、液晶显示面板及显示装置 Download PDF

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Publication number
WO2017124810A1
WO2017124810A1 PCT/CN2016/103933 CN2016103933W WO2017124810A1 WO 2017124810 A1 WO2017124810 A1 WO 2017124810A1 CN 2016103933 W CN2016103933 W CN 2016103933W WO 2017124810 A1 WO2017124810 A1 WO 2017124810A1
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Prior art keywords
gate line
array substrate
electrode
substrate
liquid crystal
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PCT/CN2016/103933
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English (en)
French (fr)
Inventor
肖文俊
王世君
陈希
董学
李治福
姜文博
薛艳娜
李月
包智颖
吕振华
张勇
米磊
耿越
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京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Priority to US15/525,930 priority Critical patent/US10509269B2/en
Publication of WO2017124810A1 publication Critical patent/WO2017124810A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate, a liquid crystal display panel, and a display device.
  • Liquid crystal display devices have developed rapidly and have become mainstream flat panel display devices. Since its inception, liquid crystal display devices have developed Twisted Nematic (TN) type, Advanced Dimension Switch (ADS) type, high aperture ratio and advanced Super-Dimensional Field Switch (High-Advanced Dimension Switch) , HADS type and In-Plane Switch (IPS) type, the drive mode and display effect are not the same, each has its own strengths. Among them, ADS type and HADS type liquid crystal display devices exhibit excellent display ability and effect due to their unique structural features and driving principles.
  • TN Twisted Nematic
  • ADS Advanced Dimension Switch
  • HADS High-Advanced Dimension Switch
  • IPS In-Plane Switch
  • the main difference between the ADS type and the HADS type liquid crystal display device is that the slit-shaped common electrode of the HADS type liquid crystal display device is located above the plate-shaped pixel electrode, and in the ADS type liquid crystal display device, the slit-shaped pixel electrode is located. Above the plate-shaped common electrode.
  • the conventional ADS type liquid crystal display device has a relatively small load on the data line and the gate line because the common electrode is not covered above the data line and the gate line, and is more suitable for application to a large size. design.
  • the structure of the conventional ADS type liquid crystal display device is as shown, for example, in FIGS. 1a to 1c. It includes an upper substrate 1 and a lower substrate 2 which are disposed opposite to each other, a gate line 21, a data line 22, a common electrode 23, and a pixel electrode 24 which are located on the lower substrate 2.
  • a color photoresist layer (not shown) and a black matrix 11 are disposed on the upper substrate 1.
  • the black matrix 11 faces the data line 22 and the gate line 21.
  • the above ADS type liquid crystal display device has some disadvantages. For example, vigorously squeezing the display panel causes displacement of the upper substrate, and if the black matrix 11 located above the gate line 21 is narrow, light leakage easily occurs. Therefore, in order to prevent light leakage, it is generally required that the width of the black matrix 11 is large, but this in turn reduces the aperture ratio and the light transmittance.
  • an array substrate a liquid crystal display panel, and a display device capable of preventing light leakage and improving aperture ratio and light transmittance.
  • An embodiment of the present invention provides an array substrate, including: a substrate substrate; a gate line on the substrate; and a common electrode and a pixel electrode which are sequentially disposed on the substrate and insulated from each other.
  • the layer where the pixel electrode is located is located above the layer where the gate line is located.
  • the array substrate further includes a shield electrode in a strip shape above the gate line, the shield electrode being transparent and electrically conductive.
  • a projected outer contour of the shield electrode on the base substrate surrounds a projection of the gate line on the base substrate, and the shield electrode is insulated from the pixel electrode and the gate line.
  • the shielding electrode is disposed in the same layer as the pixel electrode and is independent of the pixel electrode.
  • the layer in which the common electrode is located is located above the layer where the gate line is located, and the shielding electrode is disposed in the same layer as the common electrode.
  • the material of the shield electrode is a transparent conductive oxide.
  • the shield electrode has at least one slit in a region where the shield electrode overlaps the gate line.
  • the shield electrode has a slit, and an orthographic projection of the slit on the base substrate overlaps with an orthographic projection of the gate line on the base substrate.
  • the width of the at least one slit is less than or equal to the width of the gate line.
  • the common electrode is a plate electrode
  • the pixel electrode is a slit electrode
  • the embodiment of the invention further provides a liquid crystal display panel comprising an array substrate and an opposite substrate disposed opposite to each other, and a liquid crystal layer between the array substrate and the opposite substrate.
  • the array substrate may be the above array substrate provided by the embodiments of the present invention.
  • a liquid crystal display panel further includes a black matrix between the array substrate and the opposite substrate.
  • An orthographic projection of the black matrix on the substrate substrate does not overlap with an orthographic projection of the gate line on the substrate.
  • the embodiment of the invention further provides a display device, which comprises the above liquid crystal display panel provided by the embodiment of the invention.
  • a strip-shaped transparent and conductive shielding electrode is disposed above the gate line, and a projected outline of the shield electrode on the substrate substrate is disposed.
  • the projection of the surrounding gate line on the base substrate, the shield electrode is insulated from the pixel electrode and the gate line.
  • the shield electrode can shield the electric field above the gate line. Therefore, even if the liquid crystal display panel formed of the array substrate is displaced by an external force, the deflection of the liquid crystal is not affected, and light leakage can be prevented.
  • the shield electrode can function to prevent light leakage, in the liquid crystal display panel formed of the array substrate, the arrangement of the black matrix above the gate line can be omitted, thereby increasing the aperture ratio and the light transmittance of the display panel.
  • 1a is a schematic top plan view of a conventional ADS type liquid crystal display device
  • FIG. 1b is a cross-sectional structural view of the liquid crystal display device of FIG. 1a along the A-A' direction;
  • FIG. 1c is a schematic cross-sectional view of the liquid crystal display device of FIG. 1a along the B-B' direction;
  • FIG. 2a is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • 2b is another schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • 2c is another schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 3a is another schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • 3b is another schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 4a is a schematic top plan view of a liquid crystal display panel according to an embodiment of the present invention.
  • FIG. 4b is a cross-sectional structural view of the liquid crystal display panel of FIG. 4a along the A-A' direction;
  • FIG. 4c is a schematic cross-sectional view of the liquid crystal display panel of FIG. 4a taken along the B-B' direction.
  • each layer of the film in the drawings does not reflect the true scale of the array substrate, and the purpose is only to illustrate the contents of the present invention.
  • the array substrate 10 may include a base substrate 01, a gate line 02 on the base substrate 01, and a common electrode 03 and a pixel electrode 04 which are sequentially disposed on the base substrate 01 and insulated from each other. .
  • the layer in which the pixel electrode 04 is located is located above the layer where the gate line 02 is located.
  • the array substrate 10 may further include a shield electrode 05 having a strip shape above the gate line 02, and the shield electrode 05 is transparent and electrically conductive.
  • the projected outer contour of the shield electrode 05 on the base substrate 01 surrounds the projection of the gate line 02 on the base substrate 01, and the shield electrode 05 is insulated from both the pixel electrode 04 and the gate line 02.
  • a strip-shaped transparent and conductive shield electrode is disposed above the gate line, and a projected outer contour of the shield electrode on the base substrate surrounds the gate line on the base substrate.
  • the shield electrode is insulated from the pixel electrode and the gate line.
  • the shield electrode can shield the electric field above the gate line. Therefore, even if the liquid crystal display panel formed of the array substrate is displaced by an external force, the deflection of the liquid crystal is not affected, and light leakage can be prevented.
  • the shield electrode can function to prevent light leakage, in the liquid crystal display panel formed of the array substrate, the arrangement of the black matrix above the gate line can be omitted, thereby increasing the aperture ratio and the light transmittance of the display panel.
  • a common electrode signal can be applied to the shield electrode during display. Therefore, both ends of the shield electrode can be electrically connected to the common electrode located in the frame region of the array substrate.
  • the material of the shield electrode is a transparent conductive oxide.
  • the material of the shielding electrode may be indium tin oxide (ITO) or indium zinc oxide (IZO) or the like, which is not limited herein.
  • the shield electrode 05 may be disposed in the same layer as the pixel electrode 04 and independent of the pixel electrode 04. Therefore, when the array substrate is fabricated, it is not necessary to separately increase the process of fabricating the shield electrode, and it is only necessary to change the pattern of the original pixel electrode when the pixel electrode is formed. Therefore, the manufacturing cost can be reduced.
  • the layer in which the common electrode 03 is located may be located above the layer in which the gate line 02 is located.
  • the layer in which the common electrode 03 is located may also be located below the layer in which the gate line 02 is located.
  • the common electrode 03 is also It may be in the same layer as the gate line 02, which is not limited herein.
  • the shield electrode 05 is disposed in the same layer as the common electrode 03. Therefore, when the array substrate is fabricated, it is not necessary to separately increase the process of fabricating the shield electrode, and it is only necessary to change the pattern of the original common electrode when the common electrode is fabricated. Therefore, the manufacturing cost can be reduced.
  • the shield electrode located above the gate line may generate parasitic capacitance with the gate line to cause an increase in load on the gate line
  • the load on the gate line is lowered.
  • the shield electrode 05 has at least one slit V in a region where the shield electrode 05 overlaps the gate line 02.
  • the load on the gate line 02 can be reduced by reducing the facing area of the shield electrode 05 and the gate line 02.
  • the width of the slit may be less than or equal to the width of the gate line.
  • the shield electrode has a slit, and the orthographic projection of the slit on the substrate substrate overlaps with the orthographic projection of the gate line on the substrate substrate.
  • the common electrode may be a plate electrode, and the pixel electrode may be a slit electrode. That is, the array substrate may include an ADS type pixel structure.
  • the array substrate may further include a data line.
  • the layer in which the data line is located may be disposed between the layer where the gate line is located and the layer where the pixel electrode is located.
  • An insulating layer is disposed between the data line, the pixel electrode, the common electrode, and the gate line.
  • an embodiment of the present invention further provides a liquid crystal display panel including an array substrate and an opposite substrate disposed opposite to each other, and a liquid crystal layer between the array substrate and the opposite substrate.
  • the array substrate may be the above array substrate provided by the embodiments of the present invention.
  • the liquid crystal display panel may further include a black matrix 06 between the array substrate 10 and the opposite substrate 20.
  • the orthographic projection of the black matrix 06 on the base substrate 01 does not overlap with the orthographic projection of the gate line 02 on the base substrate 01.
  • the liquid crystal display panel may further include a data line 07 on the base substrate 01 of the array substrate 10.
  • a data line 07 on the base substrate 01 of the array substrate 10.
  • a strip-shaped transparent and conductive shielding electrode is disposed on the array substrate, and the shielding electrode is on the substrate base of the array substrate.
  • the outer contour of the projection on the board surrounds the projection of the gate line on the base substrate, and the shield electrode is insulated from both the pixel electrode and the gate line.
  • the shield electrode can shield the electric field above the gate line. Therefore, even if the liquid crystal display panel is displaced by an external force, the deflection of the liquid crystal is not affected, and light leakage can be prevented.
  • the shield electrode can function to prevent light leakage, in the liquid crystal display panel, the arrangement of the black matrix above the gate line can be omitted, thereby increasing the aperture ratio and the light transmittance of the display panel.
  • an embodiment of the present invention further provides a display device, including the liquid crystal display panel provided by the embodiment of the present invention.
  • the display device can be any product or component having a display function such as a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and the like.
  • a strip-shaped transparent and conductive shielding electrode is disposed above the gate line, and the outer contour of the projection of the shield electrode on the substrate substrate is surrounded.
  • the projection of the gate line on the substrate, the shield electrode is insulated from the pixel electrode and the gate line.
  • the shield electrode can shield the electric field above the gate line. Therefore, even if the liquid crystal display panel formed of the array substrate is displaced by an external force, the deflection of the liquid crystal is not affected, and light leakage can be prevented.
  • the shield electrode can function to prevent light leakage, in the liquid crystal display panel formed of the array substrate, the arrangement of the black matrix above the gate line can be omitted, thereby increasing the aperture ratio and the light transmittance of the display panel.

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  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板（10）、液晶显示面板及显示装置。在栅线（02）的上方设置有呈条状的透明且导电的屏蔽电极（05），且屏蔽电极（05）在衬底基板（01）上的投影的外轮廓包围栅线（02）在衬底基板（01）上的投影，屏蔽电极（05）与像素电极（04）以及栅线（02）均绝缘。屏蔽电极（05）可以屏蔽栅线（02）上方的电场，因此，即使由阵列基板（10）形成的液晶显示面板受外力作用发生位移，也不会影响液晶的偏转，从而可以防止漏光。另外，由于屏蔽电极（05）可以起到防止漏光的作用，因此在由阵列基板（10）形成的液晶显示面板中，可以省去栅线（02）上方的黑矩阵（06）的设置，从而增加显示面板的开口率和光透过率。

Description

阵列基板、液晶显示面板及显示装置
相关申请
本申请要求享有2016年1月19日提交的中国发明专利申请No.201610034753.3的优先权，其全部公开内容通过引用并入本文。
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板、液晶显示面板及显示装置。
背景技术
液晶显示装置发展迅速，已经成为主流平板显示装置。从出现至今，液晶显示装置已经发展出扭转向列(Twisted Nematic，TN)型、高级超维场开关(Advanced Dimension Switch，ADS)型、高开口率且高级超维场开关(High-Advanced Dimension Switch，HADS)型和平面内开关(In-Plane Switch，IPS)型等几种类型，其驱动模式和显示效果不尽相同，各有所长。其中，ADS型和HADS型液晶显示装置以其特有的结构特点和驱动原理，表现出了优良的显示能力和效果。
ADS型和HADS型液晶显示装置的主要区别在于，HADS型液晶显示装置中狭缝状的公共电极位于板状的像素电极的上方，而在ADS型液晶显示装置中，狭缝状的像素电极位于板状的公共电极的上方。现有的ADS型液晶显示装置相比于HADS型液晶显示装置，由于公共电极没有覆盖在数据线和栅线的上方，因此数据线和栅线的负载相对较小，更适合应用于大尺寸的设计。
现有的ADS型液晶显示装置的结构例如如图1a至图1c所示。其包括相对设置的上基板1和下基板2，位于下基板2上的栅线21、数据线22、公共电极23和像素电极24。在上基板1上设置有彩色光阻层(图中未示出)和黑矩阵11。黑矩阵11正对数据线22和栅线21。但是，上述ADS型液晶显示装置存在一些缺点。例如，大力挤压显示面板会导致上基板发生位移，如果位于栅线21上方的黑矩阵11较窄，就很容易发生漏光。因此，为了防止漏光，一般需要黑矩阵11的宽度较大，但是这样又会降低开口率以及光透过率。
发明内容
因此，所期望的是提供能够防止漏光并提高开口率和光透过率的阵列基板、液晶显示面板及显示装置。
本发明实施例提供了一种阵列基板，包括：衬底基板；位于所述衬底基板上的栅线；以及依次设置于所述衬底基板上且相互绝缘的公共电极和像素电极。所述像素电极所在层位于所述栅线所在层的上方。该阵列基板还包括位于所述栅线上方呈条状的屏蔽电极，所述屏蔽电极透明且导电。所述屏蔽电极在所述衬底基板上的投影的外轮廓包围所述栅线在所述衬底基板上的投影，且所述屏蔽电极与所述像素电极以及所述栅线均绝缘。
根据本发明的另一实施例，所述屏蔽电极设置为与所述像素电极同层同材质且与所述像素电极相互独立。
根据本发明的另一实施例，所述公共电极所在的层位于所述栅线所在的层的上方，所述屏蔽电极设置为与所述公共电极同层同材质。
根据本发明的另一实施例，所述屏蔽电极的材料为透明导电氧化物。
根据本发明的另一实施例，所述屏蔽电极在所述屏蔽电极与所述栅线交叠的区域具有至少一个狭缝。
根据本发明的另一实施例，所述屏蔽电极具有一个狭缝，且所述狭缝在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影重叠。
根据本发明的另一实施例，所述至少一个狭缝的宽度小于或等于所述栅线的宽度。
根据本发明的另一实施例，所述公共电极为板状电极，所述像素电极为狭缝状电极。
本发明实施例还提供了一种液晶显示面板，包括相对设置的阵列基板和对向基板，以及位于所述阵列基板和所述对向基板之间的液晶层。所述阵列基板可以为本发明实施例提供的上述阵列基板。
根据本发明的另一实施例，液晶显示面板还包括位于所述阵列基板与所述对向基板之间的黑矩阵。所述黑矩阵在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影不重叠。
本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述液晶显示面板。
在本发明实施例提供的上述阵列基板、液晶显示面板及显示装置中，在栅线的上方设置有呈条状的透明且导电的屏蔽电极，且屏蔽电极在衬底基板上的投影的外轮廓包围栅线在衬底基板上的投影，屏蔽电极与像素电极以及栅线均绝缘。屏蔽电极可以屏蔽栅线上方的电场。因此，即使由阵列基板形成的液晶显示面板受外力作用发生位移，也不会影响液晶的偏转，从而能够防止漏光。另外，由于屏蔽电极可以起到防止漏光的作用，因此在由阵列基板形成的液晶显示面板中，可以省去栅线上方的黑矩阵的设置，从而增加显示面板的开口率和光透过率。
附图说明
图1a为现有的ADS型液晶显示装置的俯视结构示意图；
图1b为图1a所示液晶显示装置沿A-A’方向的剖面结构示意图；
图1c为图1a所示液晶显示装置沿B-B’方向的剖面结构示意图；
图2a为本发明实施例提供的阵列基板的结构示意图；
图2b为本发明实施例提供的阵列基板的另一结构示意图；
图2c为本发明实施例提供的阵列基板的另一结构示意图；
图3a为本发明实施例提供的阵列基板的另一结构示意图；
图3b为本发明实施例提供的阵列基板的另一结构示意图；
图4a为本发明实施例提供的液晶显示面板的俯视结构示意图；
图4b为图4a所示液晶显示面板沿A-A’方向的剖面结构示意图；
图4c为图4a所示液晶显示面板沿B-B’方向的剖面结构示意图。
具体实施方式
为了使本发明的目的，技术方案和优点更加清楚，下面结合附图，对本发明实施例提供的阵列基板、液晶显示面板及显示装置的具体实施方式进行详细地说明。
附图中各层膜厚度和形状不反映阵列基板的真实比例，目的只是示意说明本发明内容。
应当理解，当称一个元件或一层在另一元件或层“上”、“之上”、 “上方”、“连接到”或“耦合到”另一元件或层时，它可以直接在、连接到或耦合到另一元件或层上，或者还可以存在插入的元件或层。相反，当称一个元件“直接在”、“直接连接到”或“直接耦合到”另一元件或层上时，不存在插入元件或层。
本发明实施例提供了一种阵列基板10。如图2a至图2c所示，阵列基板10可以包括衬底基板01，位于衬底基板01上的栅线02、以及依次设置于衬底基板01上且相互绝缘的公共电极03和像素电极04。像素电极04所在层位于栅线02所在层的上方。该阵列基板10还可以包括位于栅线02上方呈条状的屏蔽电极05，屏蔽电极05透明且导电。屏蔽电极05在衬底基板01上的投影的外轮廓包围栅线02在衬底基板01上的投影，且屏蔽电极05与像素电极04以及栅线02均绝缘。
在本发明实施例提供的上述阵列基板中，在栅线的上方设置有呈条状的透明且导电的屏蔽电极，且屏蔽电极在衬底基板上的投影的外轮廓包围栅线在衬底基板上的投影，屏蔽电极与像素电极以及栅线均绝缘。屏蔽电极可以屏蔽栅线上方的电场。因此，即使由该阵列基板形成的液晶显示面板受外力作用发生位移，也不会影响液晶的偏转，从而能够防止漏光。另外，由于屏蔽电极可以起到防止漏光的作用，因此在由该阵列基板形成的液晶显示面板中，可以省去栅线上方的黑矩阵的设置，从而增加显示面板的开口率和光透过率。
在由本发明实施例提供的上述阵列基板形成的液晶显示面板中，在进行显示时可以向屏蔽电极施加例如公共电极信号。因此，屏蔽电极的两端可以与位于阵列基板边框区域内的公共电极电连接。
根据本发明的另一实施例，屏蔽电极的材料为透明导电氧化物。例如，屏蔽电极的材料可以是氧化铟锡(ITO)或氧化铟锌(IZO)等，在此不作限定。
根据本发明的另一实施例，如图2b所示，屏蔽电极05可以设置为与像素电极04同层同材质且与像素电极04相互独立。由此，在制作阵列基板时，不需要单独增加制作屏蔽电极的工艺，而仅需要在制作像素电极时改变原像素电极的图形即可。因此，可以降低制作成本。
根据本发明的另一实施例，如图2c所示，公共电极03所在的层可以位于栅线02所在的层的上方。当然，公共电极03所在的层也可以位于栅线02所在的层的下方。或者，如图2b所示，公共电极03也 可以与栅线02位于同一层，在此不作限定。
根据本发明的另一实施例，如图2c所示，当公共电极03所在的层位于栅线02所在的层的上方时，屏蔽电极05设置为与公共电极03同层同材质。由此，在制作阵列基板时，不需要单独增加制作屏蔽电极的工艺，而仅需要在制作公共电极时改变原公共电极的图形即可。因此，可以降低制作成本。
在本发明实施例提供的上述阵列基板中，由于位于栅线上方的屏蔽电极可能会与栅线产生寄生电容而导致栅线上的负载增大，因此，根据本发明的另一实施例，为了降低栅线上的负载，如图3a和图3b所示，屏蔽电极05在该屏蔽电极05与栅线02交叠的区域具有至少一个狭缝V。由此，通过降低屏蔽电极05与栅线02的正对面积，能够降低栅线02上的负载。
在具体实施时，为了具有较好的防漏光作用，狭缝的宽度可以小于或等于栅线的宽度。
根据本发明的另一实施例，屏蔽电极具有一个狭缝，且该狭缝在衬底基板上的正投影与栅线在衬底基板上的正投影重叠。
在具体实施时，公共电极可以为板状电极，像素电极可以为狭缝状电极。即，阵列基板可以包括ADS型像素结构。
进一步地，阵列基板还可以包括数据线。数据线所在的层可以设置在栅线所在的层与像素电极所在的层之间。在数据线、像素电极、公共电极以及栅线相互之间均设置有绝缘层。
基于同一发明构思，本发明实施例还提供了一种液晶显示面板，包括相对设置的阵列基板和对向基板，以及位于阵列基板和对向基板之间的液晶层。该阵列基板可以为本发明实施例提供的上述阵列基板。
根据本发明的另一实施例，如图4a至图4c所示，液晶显示面板还可以包括位于阵列基板10与对向基板20之间的黑矩阵06。黑矩阵06在衬底基板01上的正投影与栅线02在衬底基板01上的正投影不重叠。
进一步地，如图4a和图4b所示，液晶显示面板还可以包括位于阵列基板10的衬底基板01上的数据线07。当然，在液晶显示面板中还可以设置有其它本领域技术人员已知的膜层和结构，在此不作赘述。
在本发明实施例提供的上述液晶显示面板中，在阵列基板上设置有呈条状的透明且导电的屏蔽电极，且屏蔽电极在阵列基板的衬底基 板上的投影的外轮廓包围栅线在衬底基板上的投影，屏蔽电极与像素电极以及栅线均绝缘。屏蔽电极可以屏蔽栅线上方的电场。因此，即使液晶显示面板受外力作用发生位移，也不会影响液晶的偏转，从而可以防止漏光。另外，由于屏蔽电极可以起到防止漏光的作用，因此在该液晶显示面板中，可以省去栅线上方的黑矩阵的设置，从而增加显示面板的开口率和光透过率。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述液晶显示面板。显示装置可以为手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。显示装置的实施可以参见上述液晶显示面板的实施例，重复之处不再赘述。
在本发明实施例提供的阵列基板、液晶显示面板及显示装置中，在栅线的上方设置有呈条状的透明且导电的屏蔽电极，且屏蔽电极在衬底基板上的投影的外轮廓包围栅线在衬底基板上的投影，屏蔽电极与像素电极以及栅线均绝缘。屏蔽电极可以屏蔽栅线上方的电场。因此，即使由阵列基板形成的液晶显示面板受外力作用发生位移，也不会影响液晶的偏转，从而可以防止漏光。另外，由于屏蔽电极可以起到防止漏光的作用，因此在由阵列基板形成的液晶显示面板中，可以省去栅线上方的黑矩阵的设置，从而增加显示面板的开口率和光透过率。
显然，本领域的技术人员可以对本发明的实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若对于本发明实施例的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

  1. 一种阵列基板，包括：
    衬底基板；
    位于所述衬底基板上的栅线；以及
    依次设置于所述衬底基板上且相互绝缘的公共电极和像素电极，所述像素电极所在层位于所述栅线所在层的上方，
    其中，所述阵列基板还包括位于所述栅线上方呈条状的屏蔽电极，所述屏蔽电极透明且导电，并且
    其中，所述屏蔽电极在所述衬底基板上的投影的外轮廓包围所述栅线在所述衬底基板上的投影，且所述屏蔽电极与所述像素电极以及所述栅线均绝缘。
  2. 如权利要求1所述的阵列基板，其中，所述屏蔽电极设置为与所述像素电极同层同材质且与所述像素电极相互独立。
  3. 如权利要求1所述的阵列基板，其中，所述公共电极所在的层位于所述栅线所在的层的上方，并且所述屏蔽电极设置为与所述公共电极同层同材质。
  4. 如权利要求1所述的阵列基板，其中，所述屏蔽电极的材料为透明导电氧化物。
  5. 如权利要求1-4中任一项所述的阵列基板，其中，所述屏蔽电极在所述屏蔽电极与所述栅线交叠的区域具有至少一个狭缝。
  6. 如权利要求5所述的阵列基板，其中，所述屏蔽电极具有一个狭缝，且所述狭缝在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影重叠。
  7. 如权利要求5所述的阵列基板，其中，所述至少一个狭缝的宽度小于或等于所述栅线的宽度。
  8. 如权利要求1-4中任一项所述的阵列基板，其中，所述公共电极为板状电极，所述像素电极为狭缝状电极。
  9. 一种液晶显示面板，包括相对设置的阵列基板和对向基板，以及位于所述阵列基板和所述对向基板之间的液晶层，其中，所述阵列基板为如权利要求1-8中任一项所述的阵列基板。
  10. 如权利要求9所述的液晶显示面板，还包括：位于所述阵列基 板与所述对向基板之间的黑矩阵，所述黑矩阵在所述衬底基板上的正投影与所述栅线在所述衬底基板上的正投影不重叠。
  11. 一种显示装置，包括如权利要求9或10所述的液晶显示面板。
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