WO2013037236A1 - 阵列基板及液晶显示面板 - Google Patents
阵列基板及液晶显示面板 Download PDFInfo
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- WO2013037236A1 WO2013037236A1 PCT/CN2012/078214 CN2012078214W WO2013037236A1 WO 2013037236 A1 WO2013037236 A1 WO 2013037236A1 CN 2012078214 W CN2012078214 W CN 2012078214W WO 2013037236 A1 WO2013037236 A1 WO 2013037236A1
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- pixel unit
- array substrate
- electrode
- pixel
- reflective electrode
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133371—Cells with varying thickness of the liquid crystal layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Definitions
- the present invention relates to the field of liquid crystal display, and in particular to an array substrate and a liquid crystal display panel including the array substrate.
- the liquid crystal display device has the advantages of low voltage, micro power consumption, large amount of display information, easy colorization, and the like, and has been widely used in electronic devices such as electronic computers, electronic notebooks, mobile phones, video cameras, and high definition televisions.
- a liquid crystal display device generally includes a liquid crystal display panel for displaying a picture and a circuit portion for providing a signal to the liquid crystal display panel.
- the liquid crystal display panel generally includes a thin film transistor (TFT) array substrate and an upper substrate, and a liquid crystal material between the array substrate and the upper substrate.
- TFT thin film transistor
- the liquid crystal display panel itself does not emit light, but modulates external light for display purposes, that is, by reflecting and transmitting external light to form different contrasts for display purposes.
- the liquid crystal display panel has two modes of transmission and reflection.
- the transmissive liquid crystal display panel uses the light emitted by the backlight of the liquid crystal display device for display.
- the disadvantage of this display mode is that the backlight needs to be in a normally open state and consumes a large amount of power, and when the liquid crystal display device is used outdoors, the image It will be affected by external light, resulting in images that cannot be clearly displayed.
- the reflective liquid crystal display panel displays an image by reflecting external light and modulating it. This mode has the advantage of greatly reducing power consumption, but also has disadvantages such as external light must be strong enough.
- the technician has developed a transflective liquid crystal display panel having a transmissive area and a reflective area in one pixel, the backlight passing through the transmissive area using the transmissive mode, and the external light passing through the reflective area using the reflective mode,
- the semi-transmissive semi-reflective liquid crystal display panel has great advantages in outdoor readability and power consumption reduction.
- a plurality of video signal lines also referred to as data lines
- a plurality of scanning lines also referred to as gate lines
- a switching element TFT and a pixel electrode for selectively supplying a video signal to the pixel unit are provided in each area, thereby constituting the pixel unit.
- each pixel unit surrounds the transmissive electrode with a reflective electrode, and therefore, the reflective electrodes of adjacent pixel units are adjacent, and The same layer of conductive layer is formed.
- the reflective electrodes of the two pixel units are generally spaced apart by a certain distance.
- such a thin film transistor array substrate structure causes the total area of the reflective area and the transmissive area to decrease, so that the area of the reflective area or the transmissive area is reduced, and the reduction of the area of any of the above areas causes the utilization of light (opening ratio) to decrease.
- the problem to be solved by the present invention is to provide a new array substrate and a liquid crystal display panel including the same, which solves the problem of low light utilization rate (opening ratio) of the conventional thin film transistor array substrate.
- the present invention provides an array substrate including a plurality of pixel units arranged in a matrix defined by a plurality of gate lines disposed in a row direction and a plurality of data lines disposed in a column direction;
- the pixel unit includes a first pixel unit and a second pixel unit, the first pixel unit is provided with a reflective electrode at an edge region, and the second pixel unit is provided with a transmissive electrode at an edge region.
- At least one of the first pixel unit and the second pixel unit are disposed adjacent to each other.
- an insulating layer is disposed between the reflective electrode of the adjacent first pixel unit and the transmissive electrode of the second pixel unit.
- the first pixel units are arranged in a row
- the second pixel units are also arranged in a row
- the first pixel unit row and the second pixel unit row are spaced apart in a row direction.
- the first pixel unit is arranged in a column
- the second pixel unit is also arranged in a column
- the first pixel unit column and the second pixel unit column are spaced apart in a column direction.
- the first pixel unit and the second pixel unit are spaced apart in a row and column direction.
- the gate lines driving the rows of the first pixel cells are disposed under the reflective electrodes of the edge regions of the first pixel cells of the row.
- the gate lines driving the rows of the second pixel cells are disposed below the reflective electrodes of the edge regions of the respective first pixel cells of the adjacent first pixel cell row.
- the common electrode lines of the first pixel unit row are disposed below the reflective electrodes of the edge regions of the first pixel units of the row.
- the common electrode lines of the second pixel unit row are disposed below the reflective electrodes of the first pixel unit edge regions of the adjacent first pixel unit rows.
- the data lines driving the columns of the first pixel unit are disposed below the reflective electrodes of the edge regions of the first pixel units of the column.
- the data lines driving the columns of the second pixel unit are disposed below the reflective electrodes of the edge regions of the first pixel units of the adjacent first pixel unit columns.
- the plurality of gate lines are disposed in a fold line, and are disposed in parallel under the reflective electrodes of the edge regions of the plurality of first pixel units in the adjacent two rows of pixel units, and the corners in the adjacent two rows of pixel units The adjacent corners of the two adjacent first pixel units are bent and connected.
- the plurality of data lines are disposed in a fold line, and are disposed in parallel below the reflective electrodes of the edge regions of the plurality of first pixel units in the adjacent two columns of pixel units, and adjacent to the corners of the adjacent two rows of pixel units The adjacent corners of the two first pixel units are deflected and connected.
- the first pixel unit and the second pixel unit further comprise a thin film transistor.
- the thin film transistor controlling the first pixel unit is disposed under the reflective electrode of the edge region thereof.
- the thin film transistor controlling the second pixel unit is disposed under the reflective electrode of the edge region of the adjacent first pixel unit.
- the first pixel unit and the second pixel unit further include a storage capacitor.
- the storage capacitor of the first pixel unit is disposed under the reflective electrode of the edge region thereof.
- the storage capacitor of the second pixel unit is disposed at an edge of the adjacent first pixel unit Zone i or below the reflective electrode.
- the upper plate of the storage capacitor is a drain of the thin film transistor, and the lower plate of the storage capacitor is a common electrode line.
- the intermediate portion of the first pixel unit is provided with a reflective electrode.
- the reflective electrode of the intermediate portion of the first pixel unit and the reflective electrode of the edge region thereof are formed by the same reflective metal layer and are directly connected.
- the intermediate portion of the first pixel unit is provided with a transmissive electrode.
- the transmissive electrode shape of the intermediate portion of the first pixel unit is circular, rectangular or rhombic.
- the transmissive electrode of the intermediate portion of the first pixel unit is electrically connected to the reflective electrode of the edge region thereof.
- an organic film is disposed between the transmissive electrode and the reflective electrode of the first pixel unit, and the thickness of the reflective electrode portion is adjusted to be half of the thickness of the transmissive electrode portion.
- the transposed electrode areas of the plurality of first pixel units are all equal.
- the transmissive electrode area of the edge region of the second pixel unit is equal to the transmissive electrode area of the intermediate portion of the first pixel unit.
- the intermediate portion of the second pixel unit is provided with a transmissive electrode.
- the transmissive electrode of the second pixel unit and the transmissive electrode at the edge thereof are formed of the same transparent conductive layer and are directly connected.
- the intermediate portion of the second pixel unit is provided with a reflective electrode.
- the reflective electrode shape of the intermediate portion of the second pixel unit is circular, rectangular or diamond.
- the reflective electrode of the intermediate portion of the second pixel unit is electrically connected to the transmissive electrode of the edge region thereof.
- an organic film is disposed between the transmissive electrode and the reflective electrode of the second pixel unit, and the thickness of the reflective electrode portion is adjusted to be half the thickness of the transmissive electrode portion.
- the reflective electrode areas of the plurality of second pixel units are all equal.
- an area of the reflective electrode of the edge region of the first pixel unit and an area of the reflective electrode of the intermediate portion of the second pixel unit are equal.
- the transposed electrode areas of the first pixel unit and the second pixel unit are equal, and the reflective electrode areas of the first pixel unit and the second pixel unit are both equal.
- the present invention also provides a liquid crystal display panel comprising the array substrate as described above.
- the method further includes a color filter substrate, wherein the color filter substrate is provided with only a plurality of color photoresists, a planarization layer, and a color filter substrate common electrode, wherein the plurality of color photoresists respectively correspond to the plurality of pixel units.
- FIG. 1 is a plan view of an array substrate provided in the first embodiment
- FIG. 2 is a schematic diagram of a gate line and a common electrode line of the array substrate provided in the second embodiment
- FIG. 4 is a schematic diagram showing the distribution of the vias corresponding to the drains of the thin film transistors of the array substrate provided in the second embodiment
- FIG. Figure 6 is a plan view of the array substrate shown in Figure 5 taken along line AA
- Figure 7 is a plan view of the array substrate provided in the third embodiment
- Figure 8 is a gate line of the array substrate provided in the third embodiment.
- FIG. 9 is a schematic diagram showing the distribution of the data lines of the array substrate and the source and drain of the thin film transistor provided in the third embodiment
- FIG. 10 is a distribution of the vias corresponding to the drain of the thin film transistor provided in the third embodiment.
- FIG. 11 is a schematic diagram showing a distribution of gate lines and common electrode lines of the array substrate of the fourth embodiment;
- FIG. 12 is a data line and a thin film crystal of the array substrate of the fourth embodiment;
- FIG. 13 is a plan view showing a distribution of vias corresponding to the drain of the thin film transistor of the fourth embodiment;
- FIG. 14 is a plan view of the array substrate provided in the fourth embodiment; Schematic diagram of the enlarged structure of the region Q.
- an array substrate of a conventional transflective liquid crystal display panel has a reflective electrode surrounding a transmissive electrode, and thus, reflective electrodes of adjacent pixel units are adjacent to each other. Since the two are formed of the same layer of metal, in order to avoid the short circuit of the reflective electrodes of the adjacent two pixel units, the reflective electrodes of the two pixel units are spaced apart by a certain distance to achieve an insulation effect.
- the inventors of the present invention have proposed a new array substrate for a transflective liquid crystal display panel, which can reduce the distance between adjacent pixel units, thereby improving the aperture ratio of the pixel unit.
- the array substrate includes a plurality of pixel units arranged in a matrix defined by a plurality of gate lines disposed in a row direction and a plurality of data lines disposed in a column direction; the pixel unit includes a first pixel unit and a second pixel The unit, the first pixel unit is provided with a reflective electrode in an edge region, and the second pixel unit is provided with a transmissive electrode in an edge region.
- first pixel units 11 and 12 and two second pixel units 13 and 14 are taken as an example, and other regions may be in the row and column directions of the four pixel units. Repeat or other arrangement.
- the first pixel unit 11 and the second pixel unit 13 are disposed adjacent to each other, and the first pixel unit 12 and the second pixel unit 14 are also disposed adjacent to each other.
- the intermediate portion of the first pixel unit 11 is provided with a reflective electrode, and the reflective electrode of the edge region thereof is the same metal layer and is formed in the same process step, which together constitutes the first
- the reflective electrode 110 of the pixel unit 11 likewise, the reflective electrodes of the intermediate portion and the edge region of the first pixel unit 12 are also formed synchronously, and together constitute the reflective electrode 120 of the first pixel unit 12.
- the intermediate portion of the second pixel unit 13 is provided with a transmissive electrode, and the transmissive electrode of the edge region thereof is the same transparent conductive layer and is formed in the same process step, and together constitutes the transmissive electrode 130 of the second pixel unit 13; Ground, the transmission area of the middle area and the edge area of the second pixel unit 14 The poles are also formed synchronously, and together constitute the transmissive electrode 140 of the second pixel unit 14.
- An insulating layer is provided at an edge adjacent to the first pixel unit 11 and the second pixel unit 13 for electrically insulating the reflective electrode 110 and the transmissive electrode 130.
- the transmissive electrode 130 is located in the lower layer, the upper layer of the transmissive electrode 130 is provided with an insulating layer, and then the reflective electrode 110 is disposed on the upper layer of the insulating layer, thereby achieving electrical insulation between the two layers of the transmissive electrode 130 and the reflective electrode 110.
- an insulating layer is also provided at the edges of the first pixel unit 12 and the second pixel unit 14 for electrically insulating the reflective electrode 120 and the transmissive electrode 140.
- the reflective electrode and the transmissive electrode are adjacent between the adjacent first pixel unit and the second pixel unit.
- the reflective electrode is generally a metal layer
- the transmissive electrode is generally a transparent conductive layer such as an indium tin oxide layer.
- the reflective electrode and the transmissive electrode are not on the same layer, and the reflective electrode and the transmissive electrode are separated by an insulating layer to insulate them from each other. Therefore, the adjacent first pixel unit and the second pixel unit are not spaced apart by a certain distance, and the transmitting electrodes of the adjacent first pixel unit and the edge region of the second pixel unit and the reflective electrode of the edge region may be directly adjacent to each other.
- FIG. 2 to FIG. 5 are schematic diagrams showing the structure of different layers of the array substrate according to Embodiment 2 of the present invention
- FIG. 6 is a schematic cross-sectional view of the array substrate of FIG.
- FIG. 5 is a top view of an array substrate according to Embodiment 2 of the present invention.
- the array substrate provided by Embodiment 2 of the present invention includes four pixel units: a first pixel unit 1100 and a first pixel.
- the first pixel units are arranged in a row, only two first pixel units are illustrated in the figure, and may further include other first pixel units arranged in a row with the first pixel unit 1100 and the first pixel unit 1200; Arranged in a row, only two second pixel units are illustrated in the figure, and may further include other second pixel units 1300 and second pixel units 1400 arranged in a row; and, the first pixel unit row And the second pixel unit row is spaced apart in the row direction.
- the edge area of the first pixel unit 1100 is provided with a reflective electrode 1102, and the middle area is provided with a rectangular transmissive electrode 1101, and the reflective electrode 1102 and the transmissive electrode 1101 are electrically connected; an edge region of the first pixel unit 1200 is provided with a reflective electrode 1202, a middle portion is provided with a rectangular transmissive electrode 1201, and the reflection Electrode 1202 and transmissive electrode 1201 are also electrically connected.
- the transmissive electrodes 1201 and 1101 may also have other shapes such as a diamond shape or a circular shape.
- the edge region of the second pixel unit 1300 is provided with a transmissive electrode 1301, the intermediate region is provided with a reflective electrode 1302 having a rectangular shape, and the reflective electrode 1302 and the transmissive electrode 1301 are electrically connected; the edge region of the second pixel unit 1400 is provided with The transmissive electrode 1401 is provided with a rectangular reflective electrode 1402 in the intermediate portion, and the reflective electrode 1402 and the transmissive electrode 1401 are also electrically connected.
- the reflective electrodes 1302 and 1402 may also have other shapes such as a diamond shape or a circular shape.
- the area of each of the reflective electrodes in the second embodiment is equal, and the area of each of the transmissive electrodes is also equal, which improves the uniformity of display.
- the gate lines driving the rows of the first pixel unit are disposed under the reflective electrodes of the edge regions of the first pixel units of the row, and are blocked by the reflective electrodes. As shown in FIG. 2 and FIG. 5, a portion of the gate line 1135 driving the first pixel unit row in the first pixel unit 1100 and 1200 is disposed on the reflective electrode 1102 and the first pixel unit 1200 of the edge region of the first pixel unit 1100. Below the reflective electrode 1202 of the edge region, only two first pixel units are shown in the figure.
- the gate line controlling the row of the first pixel unit is disposed in the The lower side of the reflective electrode at the edge of each of the first pixel units is covered, that is, the gate line is completely covered by the reflective electrode.
- the gate lines driving the rows of the second pixel unit are disposed under the reflective electrodes of the edge regions of the respective first pixel units of the adjacent first pixel unit rows, and are blocked by the reflective electrodes. 2 and FIG. 5, the gate lines 1136 driving the second pixel units 1300 and 1400 are disposed on the edge of the reflective electrode 1102 and the edge of the first pixel unit 1200 of the edge region of the first pixel unit 1100 of the adjacent first pixel unit row. Below the reflective electrode 1202 of the region.
- the gate lines controlling the second pixel unit row are disposed under the reflective electrodes of the first pixel unit edge regions of the adjacent first pixel unit rows, that is, the The gate lines are completely covered by the reflective electrodes of adjacent rows.
- the gate lines 1135 and 1136 are arranged in order to increase the aperture ratio of the pixel unit.
- the gate lines are metal wirings, in the conventional design of the prior art, a certain aperture ratio is occupied, thereby affecting the display area.
- the above arrangement can greatly reduce the display occupied by the gate lines. Show area.
- data lines are formed after the gate lines and the gate insulating layers are formed.
- the first pixel unit 1100 and the second pixel unit 1300 are driven by the same data line 1155; similarly, the first pixel unit 1200 and the second pixel unit 1400 are driven by the same data line 1156.
- the portions of the data lines 1155 and 1156 inside the first pixel unit 1100 and 1200 are disposed under the reflective electrode 1102 of the edge region of the first pixel unit 1100 and the reflective electrode 1202 of the edge region of the first pixel unit 1200, and are disposed by the reflective electrode Occlusion.
- the conventional design of the data line as a whole reduces the aperture ratio occupied by the data line.
- a thin film transistor is also disposed in each pixel unit.
- the thin film transistor that controls the pixel unit also takes a certain aperture ratio.
- the thin film transistor driving the first pixel unit is disposed under the reflective electrode of the edge region thereof, and the thin film transistor driving the second pixel unit is disposed at the adjacent first portion thereof. Below the reflective electrode of the edge area of the pixel unit.
- the first pixel unit 1100 and the second pixel unit 1300 disposed adjacent to each other are used as an example to drive the reflection of the thin film transistor 1103 of the first pixel unit 1100 on the edge region thereof.
- the thin film transistor 1303 driving the second pixel unit 1300 is also disposed under the reflective electrode 1102 in the edge region of the first pixel unit 1100.
- the thin film transistors 1103 and 1303 respectively include a gate electrode, a gate insulating layer, a semiconductor layer, a source, and a drain.
- the gate 1131 of the thin film transistor 1103 is formed by extending a portion of the gate line 1135 toward the inside of the first pixel unit 1100; the gate 1133 of the thin film transistor 1303 is directed from a portion of the gate line 1136 to the inside of the first pixel unit 1100.
- the sources 1151, 1153 of the thin film transistors 1103 and 1303 are respectively extended from the inside of the first pixel unit 1100 by the data line 1155 to the overlap with the gate electrodes 1131, 1133, respectively.
- a drain 1161 of the thin film transistor 1103 and a drain 1163 of the thin film transistor 1303 are formed while forming the source electrodes 1151, 1153.
- the drain 1161 and the gate 1131 overlap, and the drain 1163 and the gate 1133 are overlapped. There are overlaps.
- a passivation layer 119 is formed on the structure shown in FIG. 3, and is respectively disposed in the passivation layer 119 on the drain 1161 of the first pixel unit 1100 and the drain 1163 of the second pixel unit 1300. Holes 1171 and 1173 are opened.
- the via 1171 electrically connects the transmissive electrode 1101 and the drain 1161, and the via 1173
- the transmissive electrode 1301 and the drain 1163 are electrically connected.
- the equivalent circuit of the array substrate and the upper substrate is a capacitor, which is called a liquid crystal capacitor; but the liquid crystal capacitor cannot hold the voltage to the data line next time.
- the image screen is updated, in other words, when the thin film transistor is charged to the liquid crystal capacitor, the liquid crystal capacitor cannot hold the voltage until the thin film transistor charges the pixel unit again. Since the change in voltage causes a change in the liquid crystal display, it is generally necessary to provide a storage capacitor on the array substrate to hold the voltage until the thin film transistor charges the pixel unit again.
- the storage capacitor is disposed under the reflective electrode of the pixel unit.
- the storage capacitor of the first pixel unit 1100 and the storage capacitor of the second pixel unit 1300 adjacent thereto are formed in the edge region of the first pixel unit 1100 .
- the storage electrode of the first pixel unit 1200 and the storage capacitance of the second pixel unit 1400 adjacent thereto are formed under the reflective electrode 1202 of the edge region of the first pixel unit 1200.
- the gate lines are generally located on the surface of the glass substrate, and the common electrode lines 114 are also on the same layer as the gate lines.
- the common electrode line 114 can serve as a lower plate of the storage capacitor.
- the upper plate of the storage capacitor can be the drain of the thin film transistor. Since the storage capacitor does not occupy the aperture ratio, a larger storage capacitor can be set within the allowable range of the reflective electrode area to improve the potential retention of the pixel unit.
- FIG. 6 is a cross-sectional view along the AA line in FIG. 5, taking the first pixel unit 1100 and the second pixel unit 1300 disposed adjacently as an example, in the first pixel unit 1100, the common electrode line 114 and the drain. 1161 forms a storage capacitor of the first pixel unit 1100, and the common electrode line 114 and the drain 1163 form a storage capacitor of the second pixel unit 1300.
- an organic film 120 is formed on the transmissive electrode 1101 and the passivation layer 119.
- the organic film 120 is provided with a reflective electrode 1102, and the reflective electrode 1102 is electrically connected to the transmissive electrode 1101. Meanwhile, at the first pixel unit 1100
- the organic film 120 is also formed between the reflective electrode 1202 and the transmissive electrode 1301 of the second pixel unit 1300 adjacent in the column direction.
- the function of the organic film is to adjust the thickness of the cell at the reflective electrode to half the thickness of the cell at the transmissive electrode, which can adjust the optical path difference; at the same time, the adjacent reflection at the edge of the pixel unit
- the electrode and the transmissive electrode may partially overlap, and the thin film transistor of the second pixel unit Is disposed below the reflective electrode of the adjacent first pixel unit. As shown in FIG.
- the thin film transistor 1303 of the second pixel unit 1300 is disposed under the reflective electrode 1102 of the edge region of the first pixel unit 1100, and the second pixel unit
- the transmissive electrode 1301 of 1300 needs to have a portion extending below the reflective electrode 1102 of the first pixel unit 1100 and connected to the drain 1163 of the thin film transistor 1303, so that there is also a partial overlap of the reflective electrode 1102 and the transmissive electrode 1301.
- the organic film can electrically insulate the transmissive electrode and the reflective electrode in the edge region, which is equivalent to the insulating layer in the first embodiment, that is, the insulating layer in the second embodiment is an organic film, and the thickness of the organic film 120 is generally about 200 ⁇ m, which can be ensured.
- Embodiment 3 The difference between the third embodiment and the second embodiment is that the first pixel unit and the second pixel unit are arranged in a row, and the first pixel unit column and the second pixel unit column are spaced apart in the column direction. Specifically, a top view of the array substrate formed by the first pixel unit column and the second pixel unit column spaced apart in the column direction is as shown in FIG.
- the intermediate portion of the first pixel unit 2100 is also provided with a reflective electrode, the intermediate region The reflective electrode and the reflective electrode of the edge region of the first pixel unit 2100 are formed of the same reflective metal layer and are connected together to form the reflective electrode 2012; the arrangement of the first pixel unit 2300 is the same as that of the first pixel unit 2100.
- the intermediate portion of the second pixel unit 2200 is also provided with a transmissive electrode, and the transmissive electrode of the intermediate portion and the transmissive electrode of the edge region of the second pixel unit 2200 are formed of the same transparent conductive layer, and are connected together to form the transmissive electrode 2201; the second pixel The setting of the unit 2400 is the same as that of the second pixel unit 2200.
- the arrangement of the first pixel unit and the second pixel unit in a row and spaced apart may cause the arrangement of the data lines, the gate lines, the thin film transistors and the storage capacitors in the array substrate to be different from the second embodiment, and the following is combined with FIG. 7 to FIG. Detailed description.
- a data line 2155 that drives a first pixel unit column (only the first pixel unit 2100 and the first pixel unit 2300 are shown) is disposed in an edge region of each of the first pixel units of the column.
- Below the reflective electrode only reflective electrode 2102 and reflective electrode 2302 are shown).
- the data line 2156 driving the second pixel unit column (only the second pixel unit 2200 and the second pixel unit 2400 are shown) is disposed under the reflective electrode of the adjacent first pixel unit column (only the figure is shown) Reflecting electrode 2102 and reflecting electrode 2302).
- each data line is set in the first pixel unit Below the reflective electrode of the column, it is blocked by the reflective metal, which can not occupy the light transmission area and greatly increase the aperture ratio.
- the thin film transistor that controls the first pixel unit is disposed under the reflective electrode of the edge region thereof, and the thin film transistor that controls the second pixel unit is disposed under the reflective electrode of the edge region of the adjacent first pixel unit.
- the thin film transistor 2103 driving the first pixel unit 2100 is disposed under the reflective electrode 2102, and the thin film transistor 2203 driving the second pixel unit 2200 is also disposed on the reflective portion of the first pixel unit 2100. Below the electrode 2102.
- the thin film transistors respectively include a gate electrode, a gate insulating layer, a semiconductor layer, a source level, and a drain.
- the gate electrodes 2131, 2132 are respectively formed by a portion of the gate line 213 extending toward the inside of the first pixel unit 2100;
- the source 2151 is formed by extending the data line 2155 of the first pixel unit 2100 toward the inside of the first pixel unit 2100;
- the pole 2152 is formed by extending the data line 2156 of the second pixel unit 2200 toward the inside of the first pixel unit 2100.
- the drain electrodes 2161 and 2261 are also formed while forming the source level. Referring to FIG. 10, a passivation layer is formed on the structure shown in FIG. 9, and a via hole 2171 is formed in the passivation layer for the reflective electrode 2102 and the drain electrode.
- the pole 2161 is electrically connected;
- a via 2271 is also formed for electrically connecting the transmissive electrode 2201 and its drain 2261.
- the storage capacitance of the first pixel unit is disposed under the reflective electrode of the edge region thereof, and the storage capacitance of the second pixel unit is disposed under the reflective electrode of the edge region of the adjacent first pixel unit.
- the storage capacitance of the first pixel unit 2100 and the storage capacitance of the second pixel unit 2200 adjacent thereto are formed in the reflection of the first pixel unit 2100.
- the storage capacitance of the first pixel unit 2300 and the storage capacitance of the second pixel unit 2400 adjacent thereto are formed under the reflective electrode 2302 of the first pixel unit 2300.
- the intermediate portion of the first pixel unit is also disposed as a reflective electrode, and the intermediate portion of the second pixel unit is also disposed as a transmissive electrode.
- the alternative may be: the middle of the first pixel unit The area is set as the transmissive electrode, and the intermediate area of the second pixel unit is set as a reflective electrode, which can further improve the display effect.
- Embodiment 4 The first pixel unit and the second pixel unit in the array substrate provided in the fourth embodiment are in rows and columns The directions are all spaced apart.
- the pixel units adjacent to the first pixel unit in the upper, lower, left, and right directions are all the second pixel unit, and the second pixel unit is on the The adjacent pixel units in the four directions of the lower, left, and right directions are also the first pixel unit.
- the array substrate provided in the fourth embodiment includes first pixel units 3100, 3300, 3500, 3700, and 3900 and second pixel units 3200, 3400, 3600, and 3800, as shown in FIG.
- the second pixel unit is spaced apart in the direction of the row and column.
- the pixel unit adjacent to the first pixel unit in the upper, lower, left, and right directions is the second pixel unit, and the second pixel unit is in the upper, lower, left, and right directions.
- the upper adjacent pixel units are also the first pixel unit.
- the first pixel unit 3500 is adjacent to the second pixel units 3200, 3800, 3400, and 3600 in the upper, lower, left, and right directions, respectively; the second pixel unit 3600 is in the upper, lower, and left directions.
- Adjacent to the first pixel unit 3300, 3900, and 3500, the right side of the second pixel unit 3600 is also adjacent to a first pixel unit, not shown.
- the pixel units adjacent to the first pixel unit in the upper, lower, left, and right directions are all the second pixel unit, and the second pixel unit is in the upper, lower, left, and The adjacent pixel units in the right four directions are also the first pixel units, so the reflective electrodes and the transmissive electrodes are directly adjacent in all four directions.
- the reflective electrode is a metal
- the transparent electrode is a transparent conductive material such as indium tin oxide
- the reflective electrode and the transmissive electrode are not on the same layer
- the reflective electrode and the transmissive electrode are separated by an insulating layer to insulate them from each other.
- the pixel units adjacent to each other are not spaced apart by a certain distance, and the transmissive electrodes of the edge regions of adjacent pixel units and the reflective electrodes of the edge regions may be directly adjacent or even partially overlapped, thereby improving the display opening. On the basis of the rate, the requirements for process process accuracy are also reduced.
- the arrangement of the first pixel unit and the second pixel unit in the row and column directions may cause the arrangement of the data lines, the gate lines, the thin film transistors and the storage capacitors in the array substrate to be different from the second and third embodiments.
- 12 to FIG. 15 are schematic views of the structure of different layers of the array substrate 3, and FIG. 15 is an enlarged schematic view of the region Q of FIG.
- the plurality of gate lines are disposed in a fold line, and are disposed in parallel under the reflective electrodes of the edge regions of the plurality of first pixel units in the adjacent two rows of pixel units, in adjacent two rows of pixel units. The adjacent corners of the two first pixel units adjacent to each other are deflected and connected.
- such as a gate line 313 is disposed below the reflective electrode 3102 of the edge region of the first pixel unit 3100, below the reflective electrode 3502 of the edge region of the first pixel unit 3500, and below the reflective electrode 3302 of the edge region of the first pixel unit 3300;
- the polar line 313 is deflected and connected at adjacent corners of the first pixel units 3100 and 3500 adjacent to the corners of the adjacent two rows of pixel units, and is disposed in parallel under the reflective electrode 3102 and under the reflective electrode 3502.
- the connection is bent at the corners adjacent to the first pixel units 3500 and 3300 adjacent to each other at the corners, and is connected in parallel under the reflective electrode 3502 and the two portions under the reflective electrode 3302.
- the area occupied by the gate lines 313 can be greatly reduced by the above arrangement.
- the gate lines 313 are only at the transmissive electrodes 3201, 3401 of the second pixel units 3200, 3400, and 3600,
- the 3601 corner occupies a small aperture ratio, which greatly increases the display area compared to the prior art.
- the data lines can also be set in the same manner as the above, the plurality of data lines are arranged in a fold line, and are arranged in parallel below the reflective electrodes of the edge regions of the plurality of first pixel units of the adjacent two columns of pixel units. Adjacent corners of two first pixel units adjacent to each other in the adjacent two rows of pixel units are bent and connected. Specifically, referring to FIG. 12 and FIG. 14 , the data line 315 is disposed in a line in a direction of a row, and the data line 315 is below the reflective electrode 3102 of the edge region of the first pixel unit 3100 and the edge region of the first pixel unit 3500.
- the lower side of the reflective electrode 3502 and the lower side of the reflective electrode 3802 of the first pixel unit 3800 are disposed in parallel; the data line 315 is adjacent to the adjacent first pixel unit 3100 and the first pixel unit 3500 at the corners The corners are deflected, and the first pixel unit 3500 adjacent to the corners and the adjacent corners of the first pixel unit 3700 are deflected to connect the parallel portions.
- the deflected portion of the data line 315 and the deflected portion of the gate line 313 may coincide in the direction of light transmission, and do not occupy the aperture ratio alone (as shown in Fig. 15).
- the array substrate provided in the fourth embodiment has a thin film transistor that controls the first pixel unit disposed under the reflective electrode of the edge region thereof; and the thin film transistor that controls the second pixel unit is disposed on the adjacent first pixel unit. Below the reflective electrode in the edge region.
- the thin film transistor 3103 of the first pixel unit 3100 is driven to be disposed at a reflective electrode of an edge region thereof.
- the thin film transistor 3203 that drives the second pixel unit 3200 is also disposed under the reflective electrode 3102 in the edge region of the first pixel unit 3100.
- the arrangement of the gate, drain, and source stages of the thin film transistor is the same as that of the third embodiment, and the thin film transistor of the second pixel unit is set.
- the third embodiment can be specifically referred to below the reflective electrode of the edge region of the first pixel unit adjacent to the left and right sides.
- the thin film transistor of the second pixel unit can also be disposed on the first pixel unit adjacent to the upper and lower sides thereof Below the reflective electrode of the edge region, reference is made in particular to the second embodiment.
- the storage capacitor of the first pixel unit is disposed under the reflective electrode of the edge region thereof; and the storage capacitor of the second pixel unit is disposed at the edge region of the adjacent first pixel unit.
- the reflective electrode Specifically, referring to FIG. 11 to FIG. 14 , in the embodiment, the storage capacitance of the first pixel unit 3100 and the storage capacitance of the second pixel unit 3200 adjacent thereto form a reflection in the edge region of the first pixel unit 3100.
- the storage capacitor is disposed in the same manner as the third embodiment, and the storage capacitor of the second pixel unit is disposed under the reflective electrode of the edge region of the first pixel unit adjacent to the left and right, and specifically, the third embodiment can be referred to.
- the storage capacitor of the second pixel unit may also be disposed under the reflective electrode of the edge region of the first pixel unit adjacent thereto, and specifically refer to the second embodiment.
- the intermediate portion of the first pixel unit is provided with a transmissive electrode, and the transmissive electrode and the reflective electrode of the edge region thereof are electrically connected; the middle portion of the second pixel unit is provided with a reflection An electrode, and the reflective electrode is electrically connected to a transmissive electrode of an edge region thereof.
- a passivation layer is formed on the structure shown in Fig. 12, and via holes are formed in the passivation layer for electrically connecting the drain and the transmissive electrode of each pixel unit.
- the intermediate portion of the first pixel unit 3100 is provided with a transmissive electrode 3101, and the transmissive electrode 3101 and the reflective electrode 3102 of the edge region are electrically connected; the arrangement of the first unit 3300, 3500, 3700, and 3900 and the first pixel Unit 3100 is identical and will not be described in detail herein.
- the intermediate portion of the second pixel unit 3200 is provided with a reflective electrode 3202, and the reflective electrode 3202 is electrically connected to the transmissive electrode 3201 of the edge region; the second cells 3200, 3400, 3600, and 3800 are disposed in the same manner as the second pixel unit 3200, It will not be described in detail here.
- the transmissive electrodes 3101, 3301, 3501, 3701, and 3901 are rectangular, and may be circular or rhombic in other embodiments as needed; the reflective electrodes 3202, 3402, 3602, and 3802 are rectangular, in other In the embodiment, it may be set to a circle or a diamond shape as needed.
- each pixel unit in a pixel unit, that is, a reflective electrode is disposed and a transmissive electrode is disposed, each pixel unit can realize a transmissive display and can also realize a reflective display; compared to the first embodiment.
- Array substrate one pixel unit can only achieve transmissive display or can only achieve reflective display mode. Compared with other settings, the resolution is doubled and has better display effect.
- the reflective electrode is displayed by external light
- the transmissive electrode is displayed by the backlight
- the brightness of the external light and the backlight are inconsistent, so the brightness and the transmissive electrode display of the reflective electrode are displayed under the same gray scale.
- the brightness is also inconsistent. If the area of the reflective electrode of each pixel unit is set to be inconsistent, the brightness and darkness of each pixel unit may be uneven. Similarly, if the area of the transmissive electrode is inconsistent, this problem may also occur. Therefore, in order to further improve the display effect, in the present embodiment, the areas of the reflective electrodes of the respective pixel units are set to be equal, and the areas of the transmissive electrodes of the respective pixel units are also equal, so that the uniformity of the display effect can be made good.
- an organic film is further disposed between the reflective electrode and the transmissive electrode.
- the function of the organic film is to adjust the thickness of the cell at the reflective electrode to be half the thickness of the cell at the transmissive electrode, and the optical path can be The difference acts as an adjustment; at the same time, adjacent reflective and transmissive electrodes can be electrically insulated at the edges of the pixel unit.
- the array substrate provided in this embodiment has a high light transmittance.
- the array substrate shown in FIG. 14 is only the data line 315 at the corners of the second pixel unit 3200 and the second pixel unit 3400 (as shown in FIG. 15).
- the common electrode line 314 occupies a light transmissive area at the transmissive electrode of the second pixel unit, and the two places affect the aperture ratio of the transmissive area.
- the area of each triangle at the deflection is 50 ⁇ 2
- each segment occupies at the transmissive electrode.
- the area of the common electrode of the light transmitting area was 72 ⁇ 2 , and the inventors calculated the aperture ratio:
- the aperture ratio of the array substrate provided in this embodiment is as high as 99.14%, and such a high aperture ratio is not available in the prior art.
- the common electrode and the gate line may be disposed in a non-same layer structure, and the common electrode line is also disposed as a fold line like a gate line or a data line, and may also be The aperture ratio is further increased on the basis of the present embodiment.
- the present invention also provides a liquid crystal display panel comprising the thin film transistor array substrate of any of the above embodiments.
- the liquid crystal display panel further includes a color filter substrate, wherein the color film substrate is provided with only a plurality of color photoresists, a planarization layer, and a color film substrate common electrode layer, and the plurality of color photoresists and the plurality of pixels respectively The unit corresponds.
- a black matrix is usually disposed on the color filter substrate because the data lines, the gate lines, and the common electrode lines occupy the light transmission area in the prior art, and are all made of metal. It is reflective, and if it is not covered with a black matrix that is opaque, metal reflection will affect the display. However, because of the influence of the deviation of the color film substrate and the array substrate in the alignment, the black matrix is usually much wider than the metal wiring that needs to be shielded to ensure that it can be shielded, but this sacrifices a large display area.
- the liquid crystal display panel of the present invention since most of the gate lines, the data lines, and the common electrode lines are disposed under the reflective electrodes, which occupy only a very small light transmission area, the liquid crystal display panel of the present invention may not be provided with black.
- the matrix ensures the display effect while increasing the aperture ratio.
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Abstract
Description
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KR1020137013194A KR101482479B1 (ko) | 2011-09-16 | 2012-07-05 | 어레이 기판 및 액정 디스플레이 패널 |
EP12831156.0A EP2757411B1 (en) | 2011-09-16 | 2012-07-05 | Array substrate and liquid crystal display panel |
US13/897,281 US9436043B2 (en) | 2011-09-16 | 2013-05-17 | Array substrate and liquid crystal display panel |
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CN201110274675.1A CN102998862B (zh) | 2011-09-16 | 2011-09-16 | 阵列基板及液晶显示面板 |
CN201110274675.1 | 2011-09-16 |
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US13/897,281 Continuation US9436043B2 (en) | 2011-09-16 | 2013-05-17 | Array substrate and liquid crystal display panel |
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CN104216578A (zh) * | 2013-05-30 | 2014-12-17 | 京东方科技集团股份有限公司 | 一种触摸面板及显示装置 |
CN104155794B (zh) * | 2014-08-13 | 2017-07-21 | 深圳市华星光电技术有限公司 | 偏光板及显示装置 |
US9329429B2 (en) | 2014-08-13 | 2016-05-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Polarizer and display device |
CN105047143A (zh) * | 2015-09-07 | 2015-11-11 | 京东方科技集团股份有限公司 | 显示面板及其驱动方法、显示装置 |
CN107359175B (zh) * | 2017-07-25 | 2020-02-11 | 上海天马微电子有限公司 | 微发光二极管显示面板和显示装置 |
US20230024541A1 (en) * | 2019-12-20 | 2023-01-26 | Seereal Technologies S.A. | Light modulation device having high light efficiency |
CN116636326A (zh) * | 2021-11-30 | 2023-08-22 | 京东方科技集团股份有限公司 | 显示装置、显示面板及其制造方法 |
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- 2012-07-05 WO PCT/CN2012/078214 patent/WO2013037236A1/zh active Application Filing
- 2012-07-05 EP EP12831156.0A patent/EP2757411B1/en not_active Not-in-force
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KR20070079994A (ko) * | 2006-02-06 | 2007-08-09 | 삼성전자주식회사 | 표시 기판 및 이를 구비한 표시 패널 |
CN101405648A (zh) * | 2006-03-17 | 2009-04-08 | 夏普株式会社 | 液晶显示装置 |
JP2009282102A (ja) * | 2008-05-20 | 2009-12-03 | Mitsubishi Electric Corp | 液晶表示装置 |
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KR20130086358A (ko) | 2013-08-01 |
EP2757411A1 (en) | 2014-07-23 |
US20130250224A1 (en) | 2013-09-26 |
KR101482479B1 (ko) | 2015-01-13 |
CN102998862B (zh) | 2015-04-01 |
EP2757411B1 (en) | 2017-11-08 |
CN102998862A (zh) | 2013-03-27 |
US9436043B2 (en) | 2016-09-06 |
EP2757411A4 (en) | 2015-06-24 |
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