WO2013137088A1 - Light-emitting element, light-emitting device, electronic device, and lighting device - Google Patents

Light-emitting element, light-emitting device, electronic device, and lighting device Download PDF

Info

Publication number
WO2013137088A1
WO2013137088A1 PCT/JP2013/056211 JP2013056211W WO2013137088A1 WO 2013137088 A1 WO2013137088 A1 WO 2013137088A1 JP 2013056211 W JP2013056211 W JP 2013056211W WO 2013137088 A1 WO2013137088 A1 WO 2013137088A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
abbreviation
emitting
layer
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/056211
Other languages
English (en)
French (fr)
Inventor
Hiromi Seo
Satoko Shitagaki
Satoshi Seo
Takahiro Ushikubo
Toshiki Sasaki
Shogo UESAKA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to KR1020207012587A priority Critical patent/KR20200049908A/ko
Priority to KR1020217037507A priority patent/KR102525931B1/ko
Priority to DE112013001439.4T priority patent/DE112013001439B4/de
Priority to KR1020237031360A priority patent/KR102677882B1/ko
Priority to KR1020257007917A priority patent/KR20250036971A/ko
Priority to KR1020247020466A priority patent/KR102781342B1/ko
Priority to KR1020237013628A priority patent/KR102579886B1/ko
Priority to KR1020147028262A priority patent/KR102153512B1/ko
Priority to CN201380013869.3A priority patent/CN104471733B/zh
Publication of WO2013137088A1 publication Critical patent/WO2013137088A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/20—Delayed fluorescence emission
    • H10K2101/25—Delayed fluorescence emission using exciplex
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/90—Multiple hosts in the emissive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Definitions

  • One embodiment of the present invention relates to a light-emitting element in which an organic compound capable of providing light emission by application of an electric field is provided between a pair of electrodes, and also relates to a light-emitting device, an electronic device, and a lighting device including such a light-emitting element.
  • Light-emitting elements including an organic compound as a luminous body which have features such as thinness, lightness, high-speed response, and DC driving at low voltage, are expected to be applied to next-generation flat panel displays.
  • display devices in which light-emitting elements are arranged in a matrix are considered to have advantages of a wide viewing angle and high visibility over conventional liquid crystal display devices.
  • the light emission mechanism of a light-emitting element is as follows: when a voltage is applied between a pair of electrodes with an EL layer including a luminous body provided therebetween, electrons injected from the cathode and holes injected from the anode are recombined in the light emission center of the EL layer to form molecular excitons, and energy is released and light is emitted when the molecular excitons relax to the ground state.
  • a singlet excited state and a triplet excited state are known as the excited states, and it is thought that light emission can be obtained through either of the excited states.
  • Patent Document 1 In order to improve element characteristics of such light-emitting elements, improvement of an element structure, development of a material, and the like have been actively carried out (see, for example, Patent Document 1 ).
  • Patent Document 1 Japanese Published Patent Application No. 2010-182699
  • the light extraction efficiency of a light-emitting element at present is approximately 20 % to 30 %.
  • the external quantum efficiency of a light-emitting element including a phosphorescent compound has a limit of approximately 25 % at most.
  • a light-emitting element with high external quantum efficiency is provided.
  • a light-emitting element having a long lifetime is provided.
  • One embodiment of the present invention is a light-emitting element including a light-emitting layer between a pair of electrodes.
  • the light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property.
  • the light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer.
  • the first light-emitting layer the first light-emitting layer and the second light-emitting layer
  • a combination of the first organic compound and the second organic compound forms an exciplex.
  • Another embodiment of the present invention is a light-emitting element including a light-emitting layer between an anode and a cathode, a hole-transport layer between the anode and the light-emitting layer, and an electron-transport layer between the cathode and the light-emitting layer.
  • the light-emitting layer is a stack of a first light-emitting layer, which contains at least a phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is in contact with the hole-transport layer, and a second light-emitting layer, which contains at least the phosphorescent compound, the first organic compound having an electron-transport property, and the second organic compound having a hole-transport property and is in contact with the electron-transport layer.
  • the first organic compound and the second organic compound form an exciplex.
  • the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer.
  • the emission wavelength of the exciplex formed by the first organic compound (host material) and the second organic compound (assist material) is located on the longer wavelength side with respect to the emission wavelength (fluorescent wavelength) of each of the first and second organic compounds (host and assist materials). Therefore, by formation of the exciplex, the fluorescent spectrum of the first organic compound (host material) and the fluorescent spectrum of the second organic compound (assist material) can be converted into an emission spectrum which is located on the longer wavelength side.
  • the light-emitting element of one embodiment of the present invention can transfer energy by utilizing an overlap between the emission spectrum of the exciplex which is located on the longer wavelength side with respect to the emission wavelength (fluorescent wavelength) of each of the first and second organic compounds and the absorption spectrum of the phosphorescent compound (guest material), and thus the light-emitting element can achieve high energy transfer efficiency and high external quantum efficiency.
  • the first light-emitting layer and the second light-emitting layer of the light-emitting layer may contain the same phosphorescent compound or different phosphorescent compounds. Note that when different phosphorescent compounds are contained, light emitted from the first light-emitting layer has a shorter wavelength than light emitted from the second light-emitting layer.
  • the exciplex may be formed from an anion of the first organic compound and a cation of the second organic compound.
  • the phosphorescent compound may be an organometallic complex
  • the first organic compound may be mainly an electron-transport material having an electron mobility of 10 -6 cm 2 /Vs or more, specifically a ⁇ -electron deficient heteroaromatic compound
  • the second organic compound may be mainly a hole-transport material having a hole mobility of 10 ⁇ 6 cm 2 Vs or more, specifically a ⁇ -electron rich heteroaromatic compound or aromatic amine compound.
  • the present invention includes, in its scope, electronic devices and lighting devices including light-emitting devices, as well as light-emitting devices including light-emitting elements.
  • the light-emitting device in this specification refers to an image display device and a light source (e.g., a lighting device).
  • the light-emitting device includes all the following modules: a module in which a connector, such as a flexible printed circuit (FPC) or a tape carrier package (TCP), is attached to a light-emitting device; a module in which a printed wiring board is provided at the end of a TCP; and a module in which an integrated circuit (IC) is directly mounted on a light-emitting device by a chip-on-glass (COG) method.
  • a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP)
  • TCP tape carrier package
  • COG chip-on-glass
  • the light-emitting element of one embodiment of the present invention can transfer energy by utilizing an overlap between the emission spectrum of the exciplex which is located on the longer wavelength side with respect to the emission wavelength (fluorescent wavelength) of each of the first and second organic compounds and the absorption spectrum of the phosphorescent compound (guest material), and thus the light-emitting element can achieve high energy transfer efficiency and high external quantum efficiency.
  • the light-emitting layer in one embodiment of the present invention has a stacked-layer structure including the first light-emitting layer and the second light-emitting layer.
  • the first light-emitting layer and the second light-emitting layer each contain the first organic compound (host material) having an electron-transport property and the second organic compound (assist material) having a hole-transport property, and the first light-emitting layer contains a higher proportion of the second organic compound (assist material) than the second light-emitting layer. Accordingly, carriers (holes and electrons) can be well balanced in the light-emitting layer, and excitons formed in the light-emitting layer can be distributed at the interface between the first light-emitting layer and the second light- emitting layer. This makes it possible to prevent the light- emitting layer from deteriorating due to a local, increase in exciton density.
  • FIGS. 1A and IB illustrate a concept of one embodiment of the present invention.
  • FIG. 2 shows calculation results according to one embodiment of the present invention.
  • FIGS. 3A1 , 3A2, 3B1, 3B2, 3C1, and 3C2 show calculation results according to one embodiment of the present invention.
  • FIG. 4 illustrates energy levels of an exciplex applied to one embodiment of the present invention.
  • FIG. 5 illustrates a structure of a light-emitting element.
  • FIGS. 6A and 6B each illustrate a structure of a light-emitting element.
  • FIG. 7 illustrates a light-emitting device
  • FIGS. 8 A and 8B illustrate a light-emitting device.
  • FIGS. 9A to 9D illustrate electronic devices.
  • FIGS. lOA to IOC illustrate an electronic device.
  • FIG. 11 illustrates lighting devices.
  • FIG. 12 illustrates a structure of a light-emitting element 1.
  • FIG. 13 shows current density-luminance characteristics of the light-emitting element 1.
  • FIG 14 shows voltage-luminance characteristics of the light-emitting element 1.
  • FIG. 15 shows luminance-current efficiency characteristics of the light-emitting element 1.
  • FIG. 16 shows voltage-current characteristics of the light-emitting element 1.
  • FIG. 17 shows an emission spectrum of the light-emitting element 1.
  • FIG. 18 shows reliability of the light-emitting element 1.
  • FIG. 19 shows current density-luminance characteristics of a light-emitting element 2.
  • FIG. 20 shows voltage-luminance characteristics of the light-emitting element 2.
  • FIG. 21 shows luminance-current efficiency characteristics of the light-emitting element 2.
  • FIG. 22 shows voltage-current characteristics of the light-emitting element 2.
  • FIG. 23 shows an emission spectrum of the light-emitting element 2.
  • FIG. 24 illustrates a structure of a light-emitting element 3.
  • FIG. 25 shows current density-luminance characteristics of the light-emitting element 3.
  • FIG. 26 shows voltage-luminance characteristics of the light-emitting element 3.
  • FIG. 27 shows luminance-current efficiency characteristics of the light-emitting element 3.
  • FIG. 28 shows voltage-current characteristics of the light-emitting element 3.
  • FIG. 29 shows an emission spectrum of the light-emitting element 3.
  • FIG. 30 shows current density-luminance characteristics of a light-emitting element 4.
  • FIG. 31 shows voltage-luminance characteristics of the light-emitting element 4.
  • FIG. 32 shows luminance-current efficiency characteristics of the light-emitting element 4.
  • FIG. 33 shows voltage-current characteristics of the light-emitting element 4.
  • FIG. 34 shows an emission spectrum of the light-emitting element 4.
  • FIG. 35 shows reliability of the light-emitting element 4.
  • FIG. 36 shows current density-luminance characteristics of a light-emitting element 5.
  • FIG. 37 shows voltage-luminance characteristics of the light-emitting element 5.
  • FIG. 38 shows luminance-current efficiency characteristics of the light-emitting element 5.
  • FIG. 39 shows voltage-current characteristics of the light-emitting element 5.
  • FIG. 40 shows an emission spectrum of the light-emitting element 5.
  • FIG. 41 shows reliability of the light-emitting element 5.
  • FIG. 42 shows the current density-luminance characteristic of a light-emitting element 6.
  • FIG. 43 shows voltage-luminance characteristics of the light-emitting element 6.
  • FIG. 44 shows luminance-current efficiency characteristics of the light-emitting element 6.
  • FIG. 45 shows voltage-current characteristics of the light-emitting element 6.
  • FIG. 46 shows an emission spectrum of the light-emitting element 6.
  • FIG. 47 shows reliability of the light-emitting element 6.
  • the T] level of the host molecule is preferably higher than the T
  • Ti level of the host molecule is higher than the Ti level of the guest molecule, excitation energy is transferred from the host molecule to the guest molecule, and thus the guest molecule is put in a triplet excited state.
  • the guest molecule in the triplet excited state emits phosphorescence. Note that energy transfer from the Ti level of the host molecule to a singlet excitation energy level (Si level) of the guest molecule is forbidden unless the host molecule emits phosphorescence, and is unlikely to be a main energy transfer process; therefore, a description thereof is omitted here.
  • energy transfer from the host molecule in the triplet excited state (3H*) to the guest molecule in the triplet excited state (3G*) is important as represented by Formula (2-1) below (where 1G represents the singlet ground state of the guest molecule and 1H represents the singlet ground state of the host molecule).
  • both the triplet excitation energy and the singlet excitation energy of the host molecule are efficiently converted into the triplet excited state (3G*) of the guest molecule.
  • 3G* triplet excited state
  • Forster mechanism dipole-dipole interaction
  • energy transfer does not require direct contact between molecules and energy is transferred through a resonant phenomenon of dipolar oscillation between a host molecule and a guest molecule.
  • the host molecule provides energy to the guest molecule, and thus, the host molecule is put in a ground state and the guest molecule is put in an excited state.
  • the rate constant k f , * ⁇ g of Forster mechanism is expressed by Formula ( 1 ).
  • v denotes a frequency
  • / denotes a normalized emission spectrum of a host molecule (a fluorescent spectrum in energy transfer from a singlet excited state, and a phosphorescent spectrum in energy transfer from a triplet excited state)
  • 8 g (v) denotes a molar absorption coefficient of a guest molecule
  • N denotes Avogadro's number
  • n denotes a refractive index of a medium
  • R denotes an intermolecular distance between the host molecule and the guest molecule
  • ⁇ denotes a measured lifetime of an excited state (fluorescence lifetime or phosphorescence lifetime)
  • c denotes the speed of light
  • ⁇ denotes a luminescence quantum yield (a fluorescence quantum yield in energy transfer from a singlet excited state, and a phosphorescence quantum yield in energy transfer from a triplet excited state)
  • K 2 denotes a coefficient (0 to 4) of orientation of a transition dipole moment between
  • Dexter mechanism (electron exchange interaction) in which a host molecule and a guest molecule are close to a contact effective range where their orbitals overlap, and the host molecule in an excited state and the guest molecule in a ground state exchange their electrons, which leads to energy transfer.
  • rate constant k h * ⁇ g of Dexter mechanism is expressed by Formula (2).
  • h denotes a Planck constant
  • K' denotes a constant having an energy dimension
  • v denotes a frequency
  • fh y denotes a normalized emission spectrum of a host molecule (a fluorescent spectrum in energy transfer from a singlet excited state, and a phosphorescent spectrum in energy transfer from a triplet excited state)
  • ⁇ ' ⁇ ( ⁇ ) denotes a normalized absorption spectrum of a guest molecule
  • L denotes an effective molecular radius
  • R denotes an intermolecular distance between the host molecule and the guest molecule.
  • the efficiency of energy transfer from the host molecule to the guest molecule (energy transfer efficiency ⁇ ) is thought to be expressed by Formula (3).
  • k r denotes a rate constant of a light-emission process (fluorescence in energy transfer from a singlet excited state, and phosphorescence in energy transfer from a triplet excited state) of a host molecule
  • k su denotes a rate constant of a non-light-emission process (thermal deactivation or intersystem crossing) of a host molecule
  • ⁇ denotes a measured lifetime of an excited state of a host molecule.
  • a phosphorescent compound is used as a guest material.
  • absorption corresponding to direct transition from a singlet ground state to a triplet excited state is observed in some cases, which is an absorption band on the longest wavelength side.
  • light-emitting iridium complexes have a broad absorption band at around 500 nm to 600 nm as the absorption band on the longest wavelength side (as a matter of fact, the broad absorption band can be on a shorter or longer wavelength side depending on emission wavelengths).
  • This absorption band is mainly based on a triplet MLCT (metal to ligand charge transfer) transition.
  • the absorption band also includes absorptions based on a triplet ⁇ - ⁇ * transition and a singlet MLCT transition, and that these absorptions overlap each other to form a broad absorption band on the longest wavelength side in the absorption spectrum.
  • the difference between the lowest singlet excited state and the lowest triplet excited state is small, and absorptions based on these states overlap each other to form a broad absorption band on the longest wavelength side in the absorption spectrum.
  • the broad absorption band on the longest wavelength side largely overlaps with the phosphorescent spectrum of the host material as described above, whereby the rate constant kf,* ⁇ g can be increased and energy transfer efficiency can be increased.
  • a fluorescent compound is generally used as the host material; thus, phosphorescence lifetime ( ⁇ ) is a millisecond or longer which is extremely long (i.e., k r + konul is low). This is because the transition from the triplet excited state to the ground state (singlet) is a forbidden transition. Formula (3) shows that this is favorable to energy transfer efficiency ⁇ £7
  • the energy transfer process in (2-2) is considered.
  • the process in Formula (2-2A) is affected by the efficiency of intersystem crossing of the guest material. Therefore, in order to maximize emission efficiency, the process in Formula (2-2B) is considered to be important. Since Dexter mechanism (Formula (2)) is forbidden in this case, only Forster mechanism (Formula ( 1)) should be considered.
  • the energy transfer efficiency ⁇ is higher when the quantum yield ⁇ (here, a fluorescent quantum yield because energy transfer from a singlet excited state is discussed) is higher.
  • the emission spectrum of the host molecule here, a fluorescent spectrum because energy transfer from a singlet excited state is discussed
  • the absorption spectrum of the guest molecule absorption corresponding to the direct transition from the singlet ground state to the triplet excited state
  • the molar absorption coefficient of the guest molecule be also high.
  • the fluorescent spectrum of the host material overlaps with the absorption band of the phosphorescent compound used as the guest material which is on the longest wavelength side.
  • the host material should be designed so as to have not only its phosphorescent spectrum but also its fluorescent spectrum overlapping with the absorption band of the guest material which is on the longest wavelength side. In other words, the host material should be designed so as to have its fluorescent spectrum in a position similar to that of the phosphorescent spectrum.
  • level differs greatly from the T ( level (Si level > Ti level); therefore, the fluorescence emission wavelength also differs greatly from the phosphorescence emission wavelength (fluorescence emission wavelength ⁇ phosphorescence emission wavelength).
  • CBP 4,4'-di(N-carbazolyl)biphenyl
  • CBP 4,4'-di(N-carbazolyl)biphenyl
  • This example also shows that it is extremely difficult to design a host material so as to have its fluorescent spectrum in a position similar to that of its phosphorescent spectrum. Therefore, it is very important to improve efficiency in energy transfer from the host material in the singlet excited state to the guest material.
  • one embodiment of the present invention provides a useful technique which can overcome such a problem of the efficiency of the energy transfer from the host material in the singlet excited state to the guest material. Specific embodiments thereof will be described below.
  • the light-emitting element in one embodiment of the present invention is formed such that an EL layer including a light-emitting layer is provided between a pair of electrodes and the light-emitting layer contains a guest material that is a phosphorescent compound, a first organic compound, and a second organic compound.
  • an EL layer 103 including a light-emitting layer 106 is provided between a pair of electrodes (an anode 101 and a cathode 102), and the EL layer 103 has a structure in which a hole-injection layer 104, a hole-transport layer 105, the light-emitting layer 106 (106a and 106b), an electron-transport layer 107, an electron-injection layer 108, and the like are - sequentially stacked over the anode 101.
  • the light-emitting layer 106 in one embodiment of the present invention contains a phosphorescent compound 109 as a guest material, a first organic compound
  • An electron-transport material having an electron mobility of 10 ⁇ 6 cm 2 /Vs or more is mainly used as the first organic compound 110, and a hole-transport material having a hole mobility of 10 ⁇ 6 cmVv s or more is mainly used as the second organic compound
  • the first organic compound 110 is referred to as a host material
  • the second organic compound 1 11 is referred to as an assist material.
  • the level of a triplet excitation energy (Ti level) of each of the first and second organic compounds (host and assist materials) 110 and 111 be higher than the Ti level of the phosphorescent compound (guest material) 109. This is because, when the Ti level of the first organic compound 110 (or the second organic compound 111) is lower than the Ti level of the phosphorescent compound 109, the triplet excitation energy of the phosphorescent compound 109, which contributes to light emission, is quenched by the first organic compound 110 (or the second organic compound 111) and accordingly the emission efficiency is decreased.
  • a feature of the light-emitting layer 106 in one embodiment of the present invention is that light-emitting layers containing the second organic compound (assist material) 111 in different proportions are stacked in the light-emitting layer 106.
  • the light-emitting layer 106 has a stacked-layer structure including a first light-emitting layer 106a and a second light-emitting layer 106b, and the proportion of the second organic compound (assist material) 111 in the first light-emitting layer 106a is higher than the proportion of the second organic compound (assist material) 111 in the second light-emitting layer 106b.
  • first organic compound (host material) 110 or the second organic compound (assist material) 111 may be contained in a higher proportion, and the present invention includes both cases in its scope.
  • the hole-transport property of the first light-emitting layer 106a is relatively enhanced with respect to the hole-transport property of the second light-emitting layer 106b and the electron-transport property is lowered on the contrary. Therefore, without the local formation, excitons can be distributed mainly at or near the interface between the first light-emitting layer 106a and the second light-emitting layer 106b within the light-emitting layer 106. As a result, excitons can be prevented from being locally formed inside the light-emitting layer 106, and the light-emitting layer 106 can be prevented from deteriorating due to an increase in exciton density. In addition, since carriers can be prevented from passing through the light-emitting layer 106, high emission efficiency can be maintained.
  • a feature is that a combination of the first organic compound (host material) 1 10 and the second organic compound (assist material) 11 1 in each of the first and second light-emitting layers 106a and 106b forms an exciplex (also referred to as an excited complex).
  • the emission wavelength of the exciplex formed is located on the longer wavelength side with respect to the emission wavelength (fluorescent wavelength) of each of the first and second organic compounds (host and assist materials) 110 and 111. Therefore, the fluorescent spectrum of the first organic compound (host material) 110 and the fluorescent spectrum of the second organic compound (assist material) 111 can be converted into an emission spectrum which is located on the longer wavelength side.
  • the exciplex is considered to have an extremely small difference between singlet excited energy and triplet excited energy.
  • the emission spectrum of the exciplex from the single state and the emission spectrum thereof from the triplet state are highly close to each other. Accordingly, in the case where a design is implemented such that the emission spectrum of the exciplex (generally the emission spectrum of the exciplex from the singlet state) overlaps with the absorption band of the phosphorescent compound which is located on the longest wavelength side as described above, the emission spectrum of the exciplex from the triplet state (which is not observed at room temperature and not observed even at low temperature in many cases) also overlaps with the absorption band of the phosphorescent compound which is located on the longest wavelength side.
  • the optimal molecular structures and the excitation energies of one molecule of DBq (abbreviation) and one molecule of TPA (abbreviation) in the lowest singlet excited state (Si) and the lowest triplet excited state (Ti) were calculated using the time-dependent density functional theory (TD-DFT). Furthermore, the excitation energy of a dimer of DBq (abbreviation) and TPA (abbreviation) was also calculated.
  • the total energy is represented as the sum of potential energy, electrostatic energy between electrons, electronic kinetic energy, and exchange-correlation energy including all the complicated interactions between electrons.
  • an exchange-correlation interaction is approximated by a functional (a function of another function) of one electron potential represented in terms of electron density to enable high-speed and high-accuracy calculations.
  • B3LYP which was a hybrid functional was used to specify the weight of each parameter related to exchange-correlation energy.
  • 6-311 (a basis function of a triple-split valence basis set using three contraction functions for each valence orbital) was applied to all the atoms.
  • Is to 3s orbitals are considered in the case of hydrogen atoms
  • I s to 4s and 2p to 4p orbitals are considered in the case of carbon atoms.
  • the p function and the d function as polarization basis sets were added to hydrogen atoms and atoms other than hydrogen atoms, respectively.
  • Gaussian 09 was used as a quantum chemistry computational program.
  • a high performance computer (Altix 4700, manufactured by SGI Japan, Ltd.) was used for the calculations.
  • FIG. 2 shows the HOMO levels and the LUMO levels
  • FIGS. 3A1, 3A2, 3B1 , 3B2, 3C1, and 3C2 show HOMO and LUMO distributions.
  • FIG. 3A1 shows the LUMO distribution of one molecule of DBq (abbreviation).
  • FIG. 3A2 the HOMO distribution of one molecule of DBq (abbreviation); FIG. 3B1, the LUMO distribution of one molecule of TPA (abbreviation); FIG. 3B2, the HOMO distribution of one molecule of TPA (abbreviation); FIG. 3C1, the LUMO distribution of the dimer of DBq (abbreviation) and TPA (abbreviation); and FIG. 3C2, the HOMO distribution of the dimer of DBq (abbreviation) and TPA (abbreviation).
  • the LUMO of the dimer of DBq (abbreviation) and TPA (abbreviation) is distributed on the DBq (abbreviation) side
  • the HOMO thereof is distributed on the TPA (abbreviation) side.
  • and Ti levels will be shown.
  • levels correspond to fluorescence and phosphorescence wavelengths, respectively, obtained from one molecule of DBq (abbreviation).
  • the excitation energy at the Si level of one molecule of DBq (abbreviation) is 3.294 eV, and the fluorescence wavelength is 376.4 nm.
  • the excitation energy at the Ti level of one molecule of DBq (abbreviation) is 2.460 eV, and the phosphorescence wavelength is 504.1 nm.
  • excitation energies obtained from the optimal molecular structures of one molecule of TPA (abbreviation) at Si and Ti levels will be shown.
  • the excitation energies at the Si and Ti levels correspond to fluorescence and phosphorescence wavelengths, respectively, obtained from one molecule of TPA (abbreviation).
  • the excitation energy at the Si level of one molecule of TPA (abbreviation) is 3.508 eV, and the fluorescence wavelength is 353.4 nm.
  • the excitation energy at the Ti level of one molecule of TPA (abbreviation) is 2.610 eV, and the phosphorescence wavelength is 474.7 nm.
  • excitation energies obtained from the optimal molecular structures of the dimer of DBq (abbreviation) and TPA (abbreviation) at Si and Ti levels will be shown.
  • the excitation energies at the Si and Ti levels correspond to fluorescence and phosphorescence wavelengths, respectively, obtained from the dimer of DBq (abbreviation) and TPA (abbreviation).
  • the excitation energy at the Si level of the dimer of DBq (abbreviation) and TPA (abbreviation) is 2.036 eV, and the fluorescence wavelength is 609.1 nm.
  • level of the dimer of DBq (abbreviation) and TPA (abbreviation) is 2.030 eV, and the phosphorescence wavelength is 610.0 nm.
  • the fluorescence wavelength of the dimer of DBq (abbreviation) and TPA (abbreviation) is located on the longer wavelength side with respect to the fluorescence wavelengths of one molecule of DBq (abbreviation) and one molecule of TPA (abbreviation). It is also found that the difference between the fluorescence wavelength and the phosphorescence wavelength of the dimer of DBq (abbreviation) and TPA (abbreviation) is only 0.9 nm and that these wavelengths are substantially the same.
  • the light-emitting element in one embodiment of the present invention transfers energy by utilizing an overlap between the emission spectrum of the exciplex formed in the light-emitting layer and the absorption spectrum of the phosphorescent compound (guest material) and thus has high energy transfer efficiency. Therefore, the light-emitting element can achieve high external quantum efficiency.
  • the exciplex exists only in an excited state and thus has no ground state capable of absorbing energy. Therefore, a phenomenon in which the phosphorescent compound (guest material) 109 is deactivated by energy transfer from the phosphorescent compound (guest material) in the singlet excited state and triplet excited state to the exciplex before light emission (i.e., emission efficiency is lowered) is not considered to occur in principle. This also contributes to improvement of external quantum efficiency.
  • the exciplex is formed by an interaction between dissimilar molecules in excited states.
  • the exciplex is generally known to be easily formed between a material having a relatively deep LUMO level and a material having a relatively shallow HOMO level.
  • An emission wavelength of the exciplex depends on a difference in energy between the HOMO level and the LUMO level. As a general tendency, when the energy difference is large, the emission wavelength is short, and when the energy difference is small, the emission wavelength is long.
  • the HOMO levels and LUMO levels of the first organic compound (host material) 110 and the second organic compound (assist material) 111 in this embodiment are different from each other.
  • the energy levels vary in the following order: the HOMO level of the first organic compound 110 ⁇ the HOMO level of the second organic compound 111 ⁇ the LUMO level of the first organic compound 110 ⁇ the LUMO level of the second organic compound 1 11 (see FIG. 4).
  • the LUMO level and the HOMO level of the exciplex originate from the first organic compound (host material) 110 and the second organic compound (assist material) 111, respectively (see FIG. 4). Therefore, the energy difference of the exciplex is smaller than the energy difference of the first organic compound (host material) 110 and the energy difference of the second organic compound (assist material) 111. In other words, the emission wavelength of the exciplex is longer than the emission wavelengths of the first organic compound (host material) 110 and the second organic compound (assist material) 1 11.
  • process of the exciplex formation in one embodiment of the present invention can be either of the following two processes.
  • One formation process is that an exciplex is formed from the first organic compound (host material) and the second organic compound (assist material) having earners (cation or anion).
  • excitation energy is transferred from the host material in an excited state to a guest material, whereby the guest material is brought into an excited state to emit light.
  • the host material Before the excitation energy is transferred from the host material to the guest material, the host material itself emits light or the excitation energy turns into thermal energy, which leads to partial deactivation of the excitation energy. In particular, when the host material is in a singlet excited state, energy transfer is unlikely to occur as described in
  • Such deactivation of excitation energy is one of causes for a decrease in lifetime of a light-emitting element.
  • an exciplex is formed from the first organic compound (host material) and the second organic compound (assist material) having carriers (cation or anion); therefore, formation of a singlet exciton of the first organic compound (host material) can be suppressed.
  • the second organic compound (assist material) having carriers (cation or anion); therefore, formation of a singlet exciton of the first organic compound (host material) can be suppressed.
  • deactivation of the singlet excitation energy can be inhibited. Accordingly, a light-emitting element having a long lifetime can be obtained.
  • the first organic compound 1 10 is an electron-trapping compound having the property of easily capturing electrons (carrier) (having a deep LUMO level) among electron-transport materials
  • the second organic compound 111 is a hole-trapping compound having the property of easily capturing holes (carrier) (having a shallow HOMO level) among hole-transport materials
  • an exciplex is formed directly from an anion of the first organic compound and a cation of the second organic compound.
  • An exciplex formed through such a process is particularly referred to as an electroplex.
  • a light-emitting element having high emission efficiency can be obtained by suppressing the generation of the singlet excited state of the first organic compound (host material) and transferring energy from an electroplex to the phosphorescent compound (guest material), in the above-described manner. Note that in this case, the generation of the triplet excited state of the first organic compound (host material) is similarly suppressed and an exciplex is directly formed; therefore, energy transfer is considered to occur from the exciplex to the phosphorescent compound (guest material).
  • the other formation process is an elementary process where one of the first and second organic compounds (host and assist materials) forms a singlet exciton and then interacts with the other in the ground state to form an exciplex.
  • a singlet excited state of the first organic compound (host material) or the second organic compound (assist material) is temporarily generated in this case, but this is rapidly converted into an exciplex, and thus, deactivation of singlet excitation energy can be inhibited.
  • the triplet excited state of the host material is similarly rapidly converted into an exciplex and energy is transferred from the exciplex to the phosphorescent compound (guest material).
  • the second organic compound (assist material) is a hole-trapping compound, and the difference between the HOMO levels and the difference between the LUMO levels of these compounds are large (specifically, 0.3 eV or more), electrons are selectively injected into the first organic compound (host material) and holes are selectively injected into the second organic compound (assist material).
  • the process where an electroplex is formed takes precedence over the process where an exciplex is formed through a singlet exciton.
  • the difference between the energy of a peak of the emission spectrum and the energy of a peak of the absorption band on the lowest energy side in the absorption spectrum is preferably 0.3 eV or less.
  • the difference is more preferably 0.2 eV or less, even more preferably 0.1 eV or less.
  • the excitation energy of the exciplex be sufficiently transferred to the phosphorescent compound (guest material), and that light emission from the exciplex be not substantially observed. Therefore, energy is preferably transferred to the phosphorescent compound (guest material) through the exciplex so that the phosphorescent compound (guest material) emits phosphorescence.
  • the phosphorescent compound (guest material) is preferably an organometallic complex.
  • the first organic compound (host material) itself is likely to emit light and unlikely to allow energy to be transferred to the phosphorescent compound (guest material).
  • the first organic compound could emit light efficiently, but it is difficult to achieve high emission efficiency because the host material causes the problem of concentration quenching. Therefore, the case where at least one of the first and second organic compounds (host and assist materials) is a fluorescent compound (i.e., a compound which is likely to undergo light emission or thermal deactivation from the singlet excited state) is effective. Therefore, it is preferable that at least one of the first and second organic compounds (host and assist materials) be a fluorescent compound.
  • the first organic compound (host material) be a fluorescent compound and an exciplex be used as a medium for energy transfer.
  • an EL layer 203 including a light-emitting layer 206 is provided between a pair of electrodes (a first electrode (anode) 201 and a second electrode (cathode) 202), and the EL layer 203 includes a hole-injection layer 204, a hole-transport layer 205, an electron-transport layer 207, an electron-injection layer 208, and the like in addition to the light-emitting layer 206 having a stacked-layer structure including a first light-emitting layer 206a and a second light-emitting layer 206b.
  • the light-emitting layer 206 (each of the first and second light-emitting layers 206a and 206b) described in this embodiment contains a phosphorescent compound 209 as a guest material, a first organic compound 210 as a host material, and a second organic compound 211 as an assist material. Note that in this embodiment, the proportion of the first organic compound 210 in the light-emitting layer 206 (each of the first and second light-emitting layers 206a and 206b) is higher than that of the second organic compound 211.
  • the light-emitting layer 206 described in this embodiment has the stacked-layer structure including the first light-emitting layer 206a and the second light-emitting layer 206b, and the proportion of the second organic compound (assist material) 211 in the first light-emitting layer 206a is higher than the proportion of the second organic compound (assist material) 211 in the second light-emitting layer 206b.
  • the phosphorescent compound 209 is dispersed in the first organic compound (host material) 210 and the second organic compound (assist material) 211 in the light-emitting layer 206 (the first light-emitting layer 206a and the second light-emitting layer 206b)
  • crystallization of the light-emitting layer 206 can be suppressed.
  • concentration quenching due to high concentration of the phosphorescence compound 209 it is possible to suppress concentration quenching due to high concentration of the phosphorescence compound 209, and thus the light-emitting element can have higher emission efficiency.
  • the level of a triplet excitation energy (Ti level) of each of the first and second organic compounds 210 and 211 be higher than the Ti level of the phosphorescent compound 209. This is because, when the T
  • the first organic compound 210 and the second organic compound 211 form an exciplex at the time of recombination of carriers (electrons and holes) injected from the respective electrodes.
  • a fluorescence spectrum of the first organic compound 210 and that of the second organic compound 211 in the light-emitting layer 206 can be converted into an emission spectrum of the exciplex which is located on a longer wavelength side. Therefore, the first organic compound 210 and the second organic compound 211 are selected in such a manner that the emission spectrum of the exciplex largely overlaps with the absorption spectrum of the phosphorescent compound (guest material) 209, in order to maximize energy transfer from a singlet excited state. Note that it is assumed here that energy transfer from the exciplex, not the host material, occurs also in the case of a triplet excited state.
  • the phosphorescent compound 209 is preferably an organometallic complex.
  • An electron-transport material is preferably used as the first organic compound (host material) 210.
  • a hole-transport material is preferably used as the second organic compound (assist material) 21 1.
  • organometallic complex examples include bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ']iridium(IlI) tetrakis(l -pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ]iridium(III) picolinate (abbreviation: FIrpic), bis[2-(3',5'-bistrifluoromethylphenyl)pyridinato-N,C 2 ']iridium(III) picolinate (abbreviation: ⁇ Ir(CF 3 ppy) 2 (pic)), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ']iridium(IIl) acetylacetonate (abbreviation: FIracac), tris(
  • a ⁇ -electron deficient heteroaromatic compound such as a nitrogen-containing heteroaromatic compound
  • examples of which include quinoxaline derivatives and dibenzoquinoxaline derivatives such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[ ⁇ /z]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[ ⁇ ,/z]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[ ⁇ z]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]di
  • a ⁇ -electron rich heteroaromatic compound e.g., a carbazole derivative or an indole derivative
  • an aromatic amine compound examples of which include
  • PCBA1BP 4,4'-di(l-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine
  • PCBNBB 4,4'-di(l-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine
  • PCzPCNl 4,4',4"-tris[N-(l -naphthyl)-jV-phenylamino]triphenylamine
  • l '-TNATA 2,7-bis[JV-(4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluorene
  • DPA2SF N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-l ,3-diamine
  • PCA2B N,(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine
  • DPNF N ⁇ ,N''-triphenyl-N ⁇ 'J ⁇ ''-tris(9-phenylcarbazol-3-yl)benzene-l,3,5-triamine
  • PCA3B 2-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]spiro-9,9'-bifluorene
  • PCASF 2-[7V-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene
  • DPASF 2-[7V-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene
  • YGA2F N,7V'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine
  • TPD 4,4'-bis[N-(3-methylphenyl)-N-phenylamino]biphenyl
  • TPD 4,4'-bis[7V-(4-diphenylaminophenyl
  • PCzTPN2 4, 3,6-bis[jV-(9-phenylcarbazol-3-yl)-iV-phenylamino]-9-phenylcarbazole
  • PCzPCA2 3,6-bis[jV-(9-phenylcarbazol-3-yl)-iV-phenylamino]-9-phenylcarbazole
  • materials which can be used for the phosphorescent compound 209, the first organic compound (host material) 210, and the second organic compound (assist material) 211 are not limited to the above examples.
  • the combination is determined so that an exciplex can be formed, the emission spectrum of the exciplex overlaps with the absorption spectrum of the phosphorescent compound 209, and the peak of the emission spectrum of the exciplex has a longer wavelength than the peak of the absorption spectrum of the phosphorescent compound 209.
  • carrier balance can be controlled by the mixture ratio of the compounds.
  • the ratio of the first organic compound 210 to the second organic compound 21 1 is preferably 1 :9 to 9: 1.
  • a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like can be used.
  • ITO indium oxide-tin oxide
  • indium oxide-tin oxide containing silicon or silicon oxide indium oxide-zinc oxide (indium zinc oxide), indium oxide containing tungsten oxide and zinc oxide
  • gold Au
  • platinum Pt
  • nickel Ni
  • tungsten W
  • Cr chromium
  • Mo molybdenum
  • Fe iron
  • Co cobalt
  • Cu copper
  • titanium (Ti) titanium
  • an element belonging to Group 1 or Group 2 of the periodic table for example, an alkali metal such as lithium (Li) or cesium (Cs), an alkaline earth metal such as magnesium (Mg), calcium (Ca), or strontium (Sr), an alloy containing such an element (e.g., MgAg or AlLi), a rare earth metal such as europium (Eu) or ytterbium (Yb), an alloy containing such an element, graphene, or the like can be used.
  • the first electrode (anode) 201 and the second electrode (cathode) 202 can be formed by, for example, a sputtering method, an evaporation method (including a vacuum evaporation method), or the like.
  • Examples of a substance having a high hole-transport property which is used for the hole-injection layer 204 and the hole-transport layer 205 include aromatic amine compounds such as 4,4'-bis[N-( l -naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or a-NPD), N,N'-bis(3-methylphenyl)-N,iV'-diphenyl-[l ,l '-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4',4"-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MT
  • CBP 4,4'-di(N-carbazolyl)biphenyl
  • TCPB l ,3,5-tris[4-(N-carbazolyl)phenyl]benzene
  • CzPA 9-[4-( 10-phenyl-9-anthracenyl)phenyl]-9H-carbazole
  • the substances mentioned here are mainly substances that have a hole mobility of 10 ⁇ 6 cm 2 Vs or more. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used.
  • Still other examples include high molecular compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA),
  • examples of an acceptor substance which can be used for the hole-injection layer 204 include oxides of transition metals, oxides of metals belonging to Groups 4 to 8 of the periodic table, and the like. Specifically, molybdenum oxide is particularly preferable.
  • the light-emitting layer 206 (206a and 206b) contains the phosphorescent compound 209, the first organic compound (host material) 210, and the second organic compound (assist material) 21 1 as described above.
  • the electron-transport layer 207 is a layer that contains a substance having a high electron-transport property.
  • a metal complex such as Alq 3 , tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq 3 ), bis(10-hydroxybenzo[/*]quinolinato)beryllium (abbreviation: BeBq 2 ), BAlq, Zn(BOX) 2 , or bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ) 2 ).
  • heteroaromatic compound such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)- l ,3,4-oxadiazole (abbreviation: PBD), 1 ,3-bis[5-(p-ter/-butylphenyl)- 1 ,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4-tert-butylphenyl)-4-phenyl-5-(4-biphenylyl)-l ,2,4-triazole (abbreviation: TAZ), 3-(4-/ert-butylpheny l)-4-(4-ethylpheny l)-5-(4-biphenylyl)- 1 ,2,4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproine (
  • a high molecular compound such as poly(2,5-pyridine-diyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), or poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy).
  • the substances mentioned here are mainly substances that have an electron mobility of 1( ⁇ 6 cm 2 /Vs or more. Note that other than these substances, any substance that has a property of transporting more electrons than holes may be used for the electron-transport layer 207.
  • the electron-transport layer 207 is not limited to a single layer, and may be a stack of two or more layers containing any of the above substances.
  • the electron- injection layer 208 is a layer that contains a substance having a high electron-injection property.
  • the substance that can be used for the electron-injection layer 208 include alkali metals, alkaline earth metals, and compounds thereof, such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), and lithium oxide (LiO*), and rare earth metal compounds, such as erbium fluoride (ErF 3 ).
  • the above-mentioned substances for forming the electron-transport layer 207 can be used.
  • a composite material in which an organic compound and an electron donor (a donor) are mixed may be used for the electron-injection layer 208.
  • Such a composite material, in which electrons are generated in the organic compound by the electron donor has high electron-injection and electron-transport properties.
  • the organic compound here is preferably a material excellent in transporting the generated electrons, and specifically any of the above substances (such as metal complexes and heteroaromatic compounds) for the electron-transport layer 207 can be used.
  • the electron donor a substance showing an electron-donating property with respect to the organic compound may be used.
  • alkali metals, alkaline earth metals, and rare earth metals are preferable, and lithium, cesium, magnesium, calcium, erbium, ytterbium, and the like can be given.
  • Any of alkali metal oxides and alkaline earth metal oxides is preferable, examples of which are lithium oxide, calcium oxide, barium oxide, and the like, and a Lewis base such as magnesium oxide or an organic compound such as tetrathiafulvalene (abbreviation: TTF) can be used.
  • the hole-injection layer 204, the hole-transport layer 205, the light-emitting layer 206 (206a and 206b), the electron-transport layer 207, and the electron-injection layer 208 which are mentioned above can each be formed by a method such as an evaporation method (including a vacuum evaporation method), an inkjet method, or a coating method.
  • a method such as an evaporation method (including a vacuum evaporation method), an inkjet method, or a coating method.
  • first electrode 201 or the second electrode 202 in this embodiment, or both is an electrode having a light-transmitting property.
  • energy transfer efficiency can be improved owing to energy transfer utilizing an overlap between an emission spectrum of an exciplex and an absorption spectrum of a phosphorescent compound; accordingly, the light-emitting element can achieve high external quantum efficiency.
  • the light-emitting element described in this embodiment is one embodiment of the present invention and is particularly characterized by the structure of the light-emitting layer. Therefore, when the structure described in this embodiment is employed, a passive matrix light-emitting device, an active matrix light-emitting device, and the like can be manufactured. Each of these light-emitting devices is included in the present invention.
  • a TFT in the case of manufacturing the active matrix light-emitting device.
  • a staggered TFT or an inverted staggered TFT can be used as appropriate.
  • a driver circuit formed over a TFT substrate may be formed using both an n-type TFT and a p-type TFT or either an n-type TFT or a p-type TFT.
  • crystallinity of a semiconductor film used for the TFT for example, an amorphous semiconductor film, a crystalline semiconductor film, an oxide semiconductor film, or the like can be used.
  • tandem light-emitting element a light-emitting element in which a charge generation layer is provided between a plurality of EL layers will be described.
  • the light-emitting element described in this embodiment is a tandem light-emitting element including a plurality of EL layers (a first EL layer 302(1) and a second EL layer 302(2)) between a pair of electrodes (a first electrode 301 and a second electrode 304) as illustrated in FIG. 6 A.
  • the first electrode 301 functions as an anode
  • the second electrode 304 functions as a cathode.
  • the first electrode 301 and the second electrode 304 can have structures similar to those described in Embodiment 1.
  • all or any of the plurality of EL layers may have structures similar to those described in Embodiment 1 or 2.
  • the structures of the first EL layer 302(1) and the second EL layer 302(2) may be the same or different from each other and can be similar to those of the EL layers described in Embodiment 1 or 2.
  • a charge generation layer (I) 305 is provided between the plurality of EL layers (the first EL layer 302(1) and the second EL layer 302(2)).
  • the charge generation layer (I) 305 has a function of injecting electrons into one of the EL layers and injecting holes into the other of the EL layers when a voltage is applied between the first electrode 301 and the second electrode 304.
  • the charge generation layer (I) 305 injects electrons into the first EL layer 302(1) and injects holes into the second EL layer 302(2).
  • the charge generation layer (I) 305 preferably has a light-transmitting property with respect to visible light (specifically, the charge generation layer (I) 305 preferably has a visible light transmittance of 40 % or more). Further, the charge generation layer (1) 305 functions even if it has lower conductivity than the first electrode 301 or the second electrode 304.
  • the charge generation layer (I) 305 may have either a structure in which an electron acceptor (acceptor) is added to an organic compound having a high hole-transport property or a structure in which an electron donor (donor) is added to an organic compound having a high electron-transport property. Alternatively, both of these structures may be stacked.
  • examples of the organic compound having a high hole-transport property include aromatic amine compounds such as NPB, TPD, TDATA, TDATA, and 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-vV-phenylamino]biphenyl (abbreviation: BSPB), and the like.
  • aromatic amine compounds such as NPB, TPD, TDATA, TDATA, and 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-vV-phenylamino]biphenyl (abbreviation: BSPB), and the like.
  • BSPB 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-vV-phenylamino]biphenyl
  • any organic compound that has a property of transporting more holes than electrons may be used.
  • Examples of the electron acceptor include
  • F 4 -TCNQ 7,7,8, 8-tetracyano-2,3,5,6-tetrafluoroquinodimethane
  • chloranil oxides of transition metals, and oxides of metals that belong to Groups 4 to 8 of the periodic table.
  • vanadium oxide, niobium oxide, tantalum oxide, 5 chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron-accepting property.
  • molybdenum oxide is especially preferable since it is stable in the air, has a low hygroscopic property, and is easy to handle.
  • examples of the organic compound having a high electron-transport property which can be used are metal complexes having a quinoline skeleton or a benzoquinoline skeleton, such as Alq, Almq 3 , BeBq 2 , and BAlq,
  • metal complexes having an oxazole-based or 5 thiazole-based ligand such as Zn(BOX) 2 and Zn(BTZ) 2 .
  • metal complexes PBD, OXD-7, TAZ, BPhen, BCP, or the like can be used.
  • the substances mentioned here are mainly substances that have an electron mobility of 10 ⁇ 6 cm 2 /Vs or more. Note that other than these substances, any organic compound that has a property of transporting more electrons than holes may be used.
  • Examples of the electron donor which can be used are alkali metals, alkaline earth metals, rare earth metals, metals that belong to Group 13 of the periodic table, and oxides or carbonates thereof. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, and the like5 are preferable.
  • An organic compound, such as tetrathianaphthacene, may be used as the electron donor.
  • this embodiment shows the light-emitting element having two EL layers
  • the present invention can be similarly applied to a light-emitting element in which n EL layers (n is 3 or more) (302(1 ), 302(2), . . . , 302( «-l), 302(«)) are stacked as illustrated in FIG. 6B.
  • n EL layers n is 3 or more
  • the charge generation layers (I) 305( 1), 305(2), . . . , 305( «-2), 305(n-l )
  • the element can have a long lifetime.
  • voltage drop due to resistance of an electrode material can be reduced, thereby achieving homogeneous light emission in a large area.
  • emission colors of EL layers different, light of a desired color can be obtained from the light-emitting element as a whole.
  • the emission colors of first and second EL layers are complementary in a light-emitting element having the two EL layers, so that the light-emitting element can be made to emit white light as a whole.
  • the term "complementary" means color relationship in which an achromatic color is obtained when colors are mixed. That is, emission of white light can be obtained by mixture of light emitted from substances whose emission colors are complementary colors.
  • the light-emitting element as a whole can emit white light when the emission color of the first EL layer is red, the emission color of the second EL layer is green, and the emission color of the third EL layer is blue.
  • a light-emitting device described in this embodiment has a micro optical resonator (microcavity) structure in which a light resonant effect between a pair of electrodes is utilized.
  • the light-emitting device includes a plurality of light-emitting elements each of which has at least an EL layer 405 between a pair of electrodes (a reflective electrode 401 and a semi-transmissive and semi-reflective electrode 402) as illustrated in FIG. 7.
  • the EL layer 405 includes at least light-emitting layers 404 (404R, 404G, and 404B) each serving as a light-emitting region and may further include a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, a charge generation layer (E), and the like.
  • 404R, 404G, and 404B each serving as a light-emitting region and may further include a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, a charge generation layer (E), and the like.
  • a light-emitting device which includes light-emitting elements (a first light-emitting element (R) 41 OR, a second light-emitting element (G) 410G, and a third light-emitting element (B) 410B) having different structures as illustrated in FIG. 7.
  • the first light-emitting element (R) 41 OR has a structure in which a first transparent conductive layer 403a; an EL layer 405 including a first light-emitting layer (B) 404B, a second light-emitting layer (G) 404G, and a third light-emitting layer (R) 404R in part; and a semi-transmissive and semi-reflective electrode 402 are sequentially stacked over a reflective electrode 401.
  • the second light-emitting element (G) 410G has a structure in which a second transparent conductive layer 403b, the EL layer 405, and the semi-transmissive and semi-reflective electrode 402 are sequentially stacked over the reflective electrode 401.
  • the third light-emitting element (B) 410B has a structure in which the EL layer 405 and the semi-transmissive and semi-reflective electrode 402 are sequentially stacked over the reflective electrode 401.
  • the reflective electrode 401, the EL layer 405, and the semi-transmissive and semi-reflective electrode 402 are common to the light-emitting elements (the first light-emitting element (R) 41 OR, the second light-emitting element (G) 41 OG, and the third light-emitting element (B) 410B).
  • the first light-emitting layer (B) 404B emits light ( ⁇ ) having a peak in a wavelength region from 420 nm to 480 nm.
  • the second light-emitting layer (G) 404G emits light ( ⁇ ) having a peak in a wavelength region from 500 nm to 550 nm.
  • the third light-emitting layer (R) 404R emits light ( R) having a peak in a wavelength region from 600 nm to 760 nm.
  • the light-emitting elements the first light-emitting element (R) 41 OR, the second light-emitting element (G) 410G, and the third light-emitting element (B) 410B
  • light emitted from the first light-emitting layer (B) 404B, light emitted from the second light-emitting layer (G) 404G, and light emitted from the third light-emitting layer (R) 404R overlap with each other; accordingly, light having a broad emission spectrum that covers a visible light region can be emitted.
  • the above wavelengths satisfy the relation of ⁇ ⁇ ⁇ ⁇ ⁇ & .
  • Each of the light-emitting elements described in this embodiment has a structure in which the EL layer 405 is provided between the reflective electrode 401 and the semi-transmissive and semi-reflective electrode 402. Light emitted in all directions from the light-emitting layers included in the EL layer 405 is resonated by the reflective electrode 401 and the semi-transmissive and semi -reflective electrode 402 which function as a micro optical resonator (microcavity).
  • the reflective electrode 401 is formed using a conductive material having reflectivity, and a film whose visible light reflectivity is 40 % to 100 %, preferably 70 % to 100 %, and whose resistivity is 1 x
  • the semi-transmissive and semi-reflective electrode 402 is formed using a conductive material having reflectivity and a conductive material having a light-transmitting property, and a film whose visible light reflectivity is 20 % to 80 %, preferably 40 % to 70 %, and whose resistivity is 1 x 10 ⁇ 2 Qcm or lower is used.
  • the thicknesses of the transparent conductive layers are varied between the light-emitting elements, whereby the light-emitting elements differ from each other in the optical path length from the reflective electrode 401 to the semi-transmissive and semi-reflective electrode 402.
  • the total thickness from the reflective electrode 401 to the semi-transmissive and semi-reflective electrode 402 is set to rnk ⁇ ll (m is a natural number) in the first light-emitting element (R) 41 OR; the total thickness from the reflective electrode 401 to the semi-transmissive and semi-reflective electrode 402 is set to m c/2 (m is a natural number) in the second light-emitting element (G) 410G; and the total thickness from the reflective electrode 401 to the semi-transmissive and semi-reflective electrode 402 is set to (m is a natural number) in the third light-emitting element (B) 410B.
  • the light ( ⁇ ⁇ ) emitted from the third light-emitting layer (R) 404R included in the EL layer 405 is mainly extracted from the first light-emitting element (R) 41 OR
  • the light ( ⁇ ) emitted from the second light-emitting layer (G) 404G included in the EL layer 405 is mainly extracted from the second light-emitting element (G) 410G
  • the light ( ⁇ ) emitted from the first light-emitting layer (B) 404B included in the EL layer 405 is mainly extracted from the third light-emitting element (B) 410B.
  • the light extracted from each of the light-emitting elements is emitted from the semi-transmissive and semi-reflective electrode 402 side.
  • the total thickness from the reflective electrode 401 to the semi-transmissive and semi-reflective electrode 402 can be the total thickness from a reflection region in the reflective electrode 401 to a reflection region in the semi-transmissive and semi-reflective electrode 402.
  • the optical path length from the reflective electrode 401 to the third light-emitting layer (R) 404R is adjusted to a desired thickness ⁇ 2m'+ ⁇ )X ⁇ I , where m' is a natural number); thus, light emitted from the third light-emitting layer (R) 404R can be amplified.
  • Light (first reflected light) that is reflected by the reflective electrode 401 of the light emitted from the third light-emitting layer (R) 404R interferes with light (first incident light) that directly enters the semi-transmissive and semi-reflective electrode 402 from the third light-emitting layer (R) 404R.
  • the optical path length from the reflective electrode 401 to the third light-emitting layer (R) 404R to the desired value ((2W'+1) R/4, where m' is a natural number)
  • the phases of the first reflected light and the first incident light can be aligned with each other and the light emitted from the third light-emitting layer (R) 404R can be amplified.
  • the 401 to the third light-emitting layer (R) 404R can be the optical path length from a reflection region in the reflective electrode 401 to a light-emitting region in the third light-emitting layer (R) 404R.
  • the optical path length from the reflective electrode 401 to the second light-emitting layer (G) 404G is adjusted to a desired thickness ((2 ⁇ "+1) ⁇ /4, where m" is a natural number); thus, light emitted from the second light-emitting layer (G) 404G can be amplified.
  • Light (second reflected light) that is reflected by the reflective electrode 401 of the light emitted from the second light-emitting layer (G) 404G interferes with light (second incident light) that directly enters the semi-transmissive and semi-reflective electrode 402 from the second light-emitting layer (G) 404G.
  • the phases of the second reflected light and the second incident light can be aligned with each other and the light emitted from the second light-emitting layer (G) 404G can be amplified.
  • the optical path length from the reflective electrode 401 to the second light-emitting layer (G) 404G can be the optical path length from a reflection region in the reflective electrode 401 to a light-emitting region in the second light-emitting layer (G) 404G.
  • the optical path length from the reflective electrode 401 to the first light-emitting layer (B) 404B is adjusted to a desired thickness ((2W'"+1 ) B/4, where m'" is a natural number); thus, light emitted from the first light-emitting layer (B) 404B can be amplified.
  • Light (third reflected light) that is reflected by the reflective electrode 401 of the light emitted from the first light-emitting layer (B) 404B interferes with light (third incident light) that directly enters the semi-transmissive and semi-reflective electrode 402 from the first light-emitting layer (B) 404B.
  • the phases of the third reflected light and the third incident light can be aligned with each other and the light emitted from the first light-emitting layer (B) 404B can be amplified.
  • the optical path length from the reflective electrode 401 to the first light-emitting layer (B) 404B in the third light-emitting element can be the optical path length from a reflection region in the reflective electrode 401 to a light-emitting region in the first light-emitting layer (B) 404B.
  • each of the light-emitting elements in the above-described structure includes a plurality of light-emitting layers in the EL layer
  • the present invention is not limited thereto; for example, the structure of the tandem light-emitting element which is described in Embodiment 3 can be combined, in which case a plurality of EL layers and a charge generation layer interposed therebetween are provided in one light-emitting element and one or more light-emitting layers are formed in each of the EL layers.
  • the light-emitting device described in this embodiment has a microcavity structure, in which light with wavelengths which differ depending on the light-emitting elements can be extracted even when they include the same EL layer, so that it is not needed to form light-emitting elements for the colors of R, G, and B. Therefore, the above structure is advantageous for full color display owing to easiness in achieving higher resolution display or the like. In addition, emission intensity with a predetermined wavelength in the front direction can be increased, whereby power consumption can be reduced.
  • the above structure is particularly useful in the case of being applied to a color display (image display device) including pixels of three or more colors but may also be applied to lighting or the like.
  • the light-emitting device can be either a passive matrix light-emitting device or an active matrix light-emitting device. Note that any of the light-emitting elements described in the other embodiments can be applied to the light-emitting device described in this embodiment.
  • an active matrix light-emitting device is described with reference to FIGS. 8A and 8B.
  • FIG. 8A is a top view illustrating a light-emitting device and FIG. 8B is a cross-sectional view taken along the chain line A-A' in FIG. 8A.
  • the active matrix light-emitting device includes a pixel portion 502 provided over an element substrate 501 , a driver circuit portion (a source line driver circuit) 503, and driver circuit portions (gate line driver circuits) 504 (504a and 504b).
  • the pixel portion 502, the driver circuit portion 503, and the driver circuit portions 504 are sealed between the element substrate 501 and a sealing substrate 506 with a sealant 505.
  • a lead wiring 507 over the element substrate 501.
  • the lead wiring 507 is provided for connecting an external input terminal through which a signal (e.g., a video signal, a clock signal, a start signal, or a reset signal) or a potential from the outside is transmitted to the driver circuit portion 503 and the driver circuit portions 504.
  • a signal e.g., a video signal, a clock signal, a start signal, or a reset signal
  • a potential from the outside is transmitted to the driver circuit portion 503 and the driver circuit portions 504.
  • FPC flexible printed circuit
  • PWB printed wiring board
  • the light-emitting device in this specification includes, in its category, not only the light-emitting device itself but also the light-emitting device provided with the FPC or the PWB.
  • driver circuit portions and the pixel portion are formed over the element substrate 501 ; here are illustrated the driver circuit portion 503 which is the source line driver circuit and the pixel portion 502.
  • the driver circuit portion 503 is an example where a CMOS circuit is formed, which is a combination of an n-channel TFT 509 and a p-channel TFT 510. Note that a circuit included in the driver circuit portion may be formed using any of various circuits, such as a CMOS circuit, a PMOS circuit, or an NMOS circuit. Although a driver-integrated type in which a driver circuit is formed over the substrate is described in this embodiment, the present invention is not limited to this type, and the driver circuit can be formed outside the substrate.
  • the pixel portion 502 includes a plurality of pixels each of which includes a switching TFT 511 , a current control TFT 512, and a first electrode (anode) 513 which is electrically connected to a wiring (a source electrode or a drain electrode) of the current control TFT 512.
  • a switching TFT 511 a current control TFT 512
  • a first electrode (anode) 513 which is electrically connected to a wiring (a source electrode or a drain electrode) of the current control TFT 512.
  • an insulator 514 is formed to cover end portions of the first electrode (anode) 513.
  • the insulator 514 is formed using a positive photosensitive acrylic resin.
  • the insulator 514 preferably has a curved surface with curvature at an upper end portion or a lower end portion thereof in order to obtain favorable coverage by a film which is to be stacked over the insulator 514.
  • the insulator 514 preferably has a curved surface with a curvature radius (0.2 ⁇ to 3 ⁇ ) at the upper end portion.
  • the insulator 514 can be formed using either a negative photosensitive resin or a positive photosensitive resin. It is possible to use, without limitation to an organic compound, either an organic compound or an inorganic compound such as silicon oxide or silicon oxynitride. [0167]
  • An EL layer 515 and a second electrode (cathode) 516 are stacked over the first electrode (anode) 513.
  • a light-emitting layer is provided in the EL layer 515.
  • the light-emitting layer has such a stacked-layer structure as described in Embodiment 1.
  • a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, a charge generation layer, and the like can be provided as appropriate in addition to the light-emitting layer.
  • the stacked-layer structure including the first electrode (anode) 513, the EL layer 515, and the second electrode (cathode) 516 forms a light-emitting element 517.
  • the materials described in Embodiment 2 can be used for the first electrode (anode) 513, the EL layer 515, and the second electrode (cathode) 516.
  • the second electrode (cathode) 516 is electrically connected to the FPC 508 which is an external input terminal.
  • FIG. 8B illustrates only one light-emitting element 517
  • a plurality of light-emitting elements is arranged in a matrix in the pixel portion 502.
  • Light-emitting elements which provide three kinds of light emission (R, G, and B) are selectively formed in the pixel portion 502, whereby a light-emitting device capable of full color display can be fabricated.
  • a light-emitting device capable of full color display may be fabricated by a combination with color filters.
  • the sealing substrate 506 is attached to the element substrate 501 with the sealant 505, whereby the light-emitting element 517 is provided in a space 518 surrounded by the element substrate 501, the sealing substrate 506, and the sealant 505.
  • the space 518 may be filled with an inert gas (such as nitrogen or argon) or the sealant 505.
  • An epoxy-based resin or low-melting-point glass is preferably used for the sealant 505. It is preferable that such a material do not transmit moisture or oxygen as much as possible.
  • a glass substrate, a quartz substrate, or a plastic substrate formed of fiberglass reinforced plastic (FRP), polyvinyl fluoride (PVF), polyester, acrylic, or the like can be used as the sealing substrate 506, a glass substrate, a quartz substrate, or a plastic substrate formed of fiberglass reinforced plastic (FRP), polyvinyl fluoride (PVF), polyester, acrylic, or the like can be used.
  • an active matrix light-emitting device can be obtained.
  • the light-emitting device is fabricated using a light-emitting element which is one embodiment of the present invention.
  • Examples of electronic devices to which the light-emitting device is applied are television devices (also referred to as TV or television receivers), monitors for computers and the like, cameras such as digital cameras and digital video cameras, digital photo frames, cellular phones (also referred to as portable telephone devices), portable game machines, portable information terminals, audio playback devices, large game machines such as pin-ball machines, and the like. Specific examples of these electronic devices are illustrated in FIGS. 9A to 9D.
  • FIG. 9A illustrates an example of a television device.
  • a display portion 7103 is incorporated in a housing 7101.
  • the display portion 7103 is capable of displaying images, and a light-emitting device can be used for the display portion 7103.
  • the housing 7101 is supported by a stand 7105.
  • the television device 7100 can be operated with an operation switch provided in the housing 7101 or a separate remote controller 7110. With operation keys 7109 of the remote controller 7110, channels and volume can be controlled and images displayed on the display portion 7103 can be controlled. Furthermore, the remote controller 7110 may be provided with a display portion 7107 for displaying data output from the remote controller 7110. [0178]
  • the television device 7100 is provided with a receiver, a modem, and the like. With the receiver, general television broadcasting can be received. Furthermore, when the television device 7100 is connected to a communication network by wired or wireless connection via the modem, one-way (from a transmitter to a receiver) or two-way (between a transmitter and a receiver, between receivers, or the like) data communication can be performed.
  • FIG. 9B illustrates a computer, which includes a main body 7201 , a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. Note that this computer is manufactured by using a light-emitting device for the display portion 7203.
  • FIG. 9C illustrates a portable game machine, which includes two housings, i.e., a housing 7301 and a housing 7302, connected to each other via ajoint portion 7303 so that the portable game machine can be opened or closed.
  • a display portion 7304 is incorporated in the housing 7301 and a display portion 7305 is incorporated in the housing 7302.
  • 9C includes a speaker portion 7306, a recording medium insertion portion 7307, an LED lamp 7308, input means (an operation key 7309, a connection terminal 7310, a sensor 7311 (a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, electric current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays), and a microphone 7312), and the like.
  • a sensor 7311 a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, electric current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays
  • a microphone 7312 and the like.
  • the structure of the portable game machine is not limited to the above structure as long as a light-emitting device is used for at least either the display portion 7304 or the display portion 7305, or both, and may include other accessories as appropriate.
  • the portable game machine illustrated in FIG. 9C has a function of reading out a program or data stored in a storage medium to display it on the display portion, and a function of sharing information with another portable game machine by wireless communication. Note that the portable game machine illustrated in FIG. 9C can have a variety of functions without limitation to those above.
  • FIG. 9D illustrates an example of a cellular phone.
  • a cellular phone 7400 is provided with a display portion 7402 incorporated in a housing 7401 , operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the cellular phone 7400 is manufactured using a light-emitting device for the display portion 7402.
  • the first mode is a display mode mainly for displaying an image.
  • the second mode is an input mode mainly for inputting information such as characters.
  • the third mode is a display-and-input mode in which two modes of the display mode and the input mode are mixed.
  • a character input mode mainly for inputting characters is selected for the display portion 7402 so that characters displayed on the screen can be input.
  • a detection device including a sensor for detecting inclination, such as a gyroscope or an acceleration sensor, is provided inside the cellular phone 7400
  • display on the screen of the display portion 7402 can be automatically changed by determining the orientation of the cellular phone 7400 (whether the cellular phone is placed horizontally or vertically for a landscape mode or a portrait mode).
  • the screen modes are changed by touch on the display portion 7402 or operation with the operation buttons 7403 of the housing 7401.
  • the screen modes can be changed depending on the kind of image displayed on the display portion 7402. For example, when a signal for an image to be displayed on the display portion is data of moving images, the screen mode is changed to the display mode. When the signal is text data, the screen mode is changed to the input mode.
  • the screen mode may be controlled so as to be changed from the input mode to the display mode.
  • the display portion 7402 may function as an image sensor. For example, an image of a palm print, a fingerprint, or the like is taken by touch on the display portion 7402 with the palm or the finger, whereby personal identification can be performed. Furthermore, when a backlight or a sensing light source which emits near-infrared light is provided for the display portion, an image of a finger vein, a palm vein, or the like can also be taken.
  • FIGS. 10A and 10B illustrate a foldable tablet terminal.
  • the tablet terminal is opened in FIG. 10A.
  • the tablet terminal includes a housing 9630, a display portion 9631a, a display portion 9631b, a display mode switch 9034, a power switch 9035, a power saver switch 9036, a clasp 9033, and an operation switch 9038.
  • the tablet terminal is manufactured using the light-emitting device for either the display portion 9631a or the display portion 9631b or both.
  • Part of the display portion 9631 a can be a touch panel region 9632a and data can be input when a displayed operation key 9637 is touched.
  • a structure in which a half region in the display portion 9631a has only a display function and the other half region also has a touch panel function is shown as an example, the display portion 9631a is not limited to the structure.
  • the whole region in the display portion 9631 a may have a touch panel function.
  • the display portion 9631a can display keyboard buttons in the whole region to be a touch panel, and the display portion 963 lb can be used as a display screen. [0191 ]
  • part of the display portion 9631 b can be a touch panel region 9632b.
  • a keyboard display switching button 9639 displayed on the touch panel is touched with a finger, a stylus, or the like, a keyboard can be displayed on the display portion 9631 b.
  • Touch input can be performed in the touch panel region 9632a and the touch panel region 9632b at the same time.
  • the display mode switch 9034 can switch the display between portrait mode, landscape mode, and the like, and between monochrome display and color display, for example.
  • the power saver switch 9036 can control display luminance in accordance with the amount of external light in use of the tablet terminal detected by an optical sensor incorporated in the tablet terminal.
  • an optical sensor incorporated in the tablet terminal.
  • another detection device including a sensor for detecting inclination, such as a gyroscope or an acceleration sensor, may be incorporated in the tablet terminal.
  • FIG. 10A shows an example in which the display portion 963 la and the display portion 963 lb have the same display area; however, without limitation thereon, one of the display portions may be different from the other display portion in size and display quality.
  • one display panel may be capable of higher-definition display than the other display panel.
  • the tablet terminal is closed in FIG. 10B.
  • the tablet terminal includes the housing 9630, a solar cell 9633, a charge and discharge control circuit 9634, a battery 9635, and a DCDC converter 9636.
  • a structure including the battery 9635 and the DCDC converter 9636 is illustrated as an example of the charge and discharge control circuit 9634.
  • the housing 9630 can be closed when the tablet terminal is not used.
  • the display portion 9631a and the display portion 9631b can be protected; thus, a tablet terminal which has excellent durability and excellent reliability in terms of long-term use can be provided.
  • the tablet terminal illustrated in FIGS. 10A and 10B can have a function of displaying a variety of kinds of data (e.g., a still image, a moving image, and a text image), a function of displaying a calendar, a date, the time, or the like on the display portion, a touch-input function of operating or editing the data displayed on the display portion by touch input, a function of controlling processing by a variety of kinds of software (programs), and the like.
  • a function of displaying a variety of kinds of data e.g., a still image, a moving image, and a text image
  • a function of displaying a calendar, a date, the time, or the like on the display portion e.g., a calendar, a date, the time, or the like
  • a touch-input function of operating or editing the data displayed on the display portion by touch input
  • a function of controlling processing by a variety of kinds of software (programs) e.g., a
  • the solar cell 9633 provided on a surface of the tablet terminal can supply power to the touch panel, the display portion, a video signal, processing portion, or the like. Note that the solar cell 9633 can be provided on one or both surfaces of the housing 9630 and the battery 9635 can be charged efficiently.
  • the use of a lithium ion battery as the battery 9635 is advantageous in downsizing or the like.
  • FIG. 10B The structure and the operation of the charge and discharge control circuit 9634 illustrated in FIG. 10B will be described with reference to a block diagram in FIG. IOC.
  • the solar cell 9633, the battery 9635, the DCDC converter 9636, a converter 9638, switches SW1 to SW3, and a display portion 9631 are illustrated in FIG. I OC, and the battery 9635, the DCDC converter 9636, the converter 9638, and the switches SW1 to SW3 correspond to the charge and discharge control circuit 9634 illustrated in FIG. 10B.
  • the solar cell 9633 is described as an example of a power generation means; however, without limitation thereon, the battery 9635 may be charged using another power generation means such as a piezoelectric element or a thermoelectric conversion element (Peltier element).
  • a non-contact electric power transmission module which transmits and receives power wirelessly (without contact) to charge the battery 9635, or a combination of the solar cell 9633 and another means for charge may be used.
  • an embodiment of the present invention is not limited to the electronic device illustrated in FIGS. 10A to IOC as long as the display portion described in the above embodiment is included.
  • the electronic devices can be obtained by the use of the light-emitting device which is one embodiment of the present invention.
  • the light-emitting device has a remarkably wide application range, and can be applied to electronic devices in a variety of fields.
  • a light-emitting device including a light-emitting element which is one embodiment of the present invention is applied to the lighting devices.
  • FIG. 11 illustrates an example in which a light-emitting device is used for an interior lighting device 8001. Since the light-emitting device can have a larger area, a lighting device having a large area can also be formed.
  • a lighting device 8002 in which a light-emitting region has a curved surface can also be formed with the use of a housing with a curved surface.
  • a light-emitting element included in the light-emitting device described in this embodiment is in the form of a thin film, which allows the housing to be designed more freely. Therefore, the lighting device can be elaborately designed in a variety of ways. Further, a wall of the room may be provided with a large-sized lighting device 8003.
  • a lighting device 8004 which has a function as a table can be obtained.
  • a lighting device which has a function as the furniture can be obtained.
  • a light-emitting element 1 which is one embodiment of the present invention is described with reference to FIG. 12.
  • Chemical formulae of materials used in this example are shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 1100 by a sputtering method, so that a first electrode 1101 functioning as an anode was formed. Note that the thickness was set to 110 nm and the electrode area was set to 2 mm x 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • UV ozone treatment was performed for 370 seconds after washing of a surface of the substrate with water and baking that was performed at 200 °C for one hour.
  • the substrate was transferred into a vacuum evaporation apparatus where the pressure had been reduced to approximately 10 ⁇ 4 Pa, and was subjected to vacuum baking at 170 °C for 30 minutes in a heating chamber of the vacuum evaporation apparatus, and then the substrate 1100 was cooled down for about 30 minutes.
  • the substrate 1100 was fixed to a holder in the vacuum evaporation apparatus so that a surface on which the first electrode 1 101 was provided faced downward.
  • a hole-injection layer 11 11 , a hole-transport layer 1112, a light-emitting layer 1113, an electron-transport layer 11 14, and an electron-injection layer 1115 which are included in an EL layer 1102 are sequentially formed by a vacuum evaporation method.
  • the pressure in the vacuum evaporation apparatus was reduced to about 10 -4 Pa. Then, l ,3,5-tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II) and molybdenum(VI) oxide were co-evaporated with a mass ratio of DBT3P-II (abbreviation) to molybdenum oxide being 4:2, whereby the hole-injection layer 1111 was formed over the first electrode 1101. The thickness of the hole-injection layer 1111 was set to 40 nm. Note that co-evaporation is an evaporation method by which a plurality of different substances is concurrently vaporized from respective different evaporation sources.
  • the hole-transport layer 1 112 was formed by evaporation of 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP) to a thickness of 20 nm.
  • BPAFLP 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • the light-emitting layer 1113 was formed over the hole-transport layer 1112.
  • the light-emitting layer 1113 having a stacked-layer structure was formed by forming a first light-emitting layer 1113a with a thickness of 15 nm by co-evaporation of 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo
  • the electron-transport layer 1114 was formed in such a manner that a film of 2mDBTBPDBq-II (abbreviation) was formed by evaporation to a thickness of 10 nm and then a film of bathophenanthroline (abbreviation: BPhen) was formed by evaporation to a thickness of 20 nm. Further, over the electron-transport layer 1114, a film of lithium fluoride was formed by evaporation to a thickness of 1 nm to form the electron-injection layer 1115.
  • a film of 2mDBTBPDBq-II abbreviation
  • BPhen bathophenanthroline
  • an aluminum film was formed by evaporation to a thickness of 200 nm as a second electrode 1 103 functioning as a cathode.
  • the light-emitting element 1 was fabricated. Note that, in all the above evaporation steps, evaporation was performed by a resistance-heating method.
  • Table 1 shows an element structure of the light-emitting element 1 obtained as described above.
  • the fabricated light-emitting element 1 was sealed in a glove box containing a nitrogen atmosphere so as not to be exposed to air (specifically, a sealant was applied to an outer edge of the element and heat treatment was performed at 80 °C for 1 hour at the time of sealing).
  • FIG. 13 shows current density-luminance characteristics of the light-emitting element 1.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents current density (mA/cm 2 ).
  • FIG. 14 shows voltage-luminance characteristics of the light-emitting element 1.
  • the vertical axis represents luminance (cd/m )
  • the horizontal axis represents voltage (V).
  • FIG. 15 shows luminance-current efficiency characteristics of the light-emitting element 1.
  • the vertical axis represents current efficiency (cd/A)
  • the horizontal axis represents luminance (cd/m 2 ).
  • FIG. 16 shows voltage-current characteristics of the light-emitting element 1.
  • the vertical axis represents current (mA)
  • the horizontal axis represents voltage (V).
  • FIG. 14 reveals high efficiency of the light-emitting element 1 that is one embodiment of the present invention.
  • Table 2 shows initial values of main characteristics of the light-emitting element 1 at a luminance of about 1000 cd/m 2 .
  • the light-emitting element 1 fabricated in this example has high external quantum efficiency, which means its high emission efficiency. Moreover, as for color purity, it can be found that the light-emitting element exhibits yellow-green emission with excellent color purity.
  • FIG. 17 shows an emission spectrum when a current at a current density of 25 mA/cm 2 was supplied to the light-emitting element 1.
  • FIG. 17 shows that the emission spectrum of the light-emitting element 1 has a peak at around 550 nm, which indicates that the peak is derived from emission from the phosphorescent organometallic iridium complex [Ir(tBuppm)2(acac)].
  • FIG. 18 shows results of a reliability test of the light-emitting element 1.
  • the vertical axis represents normalized luminance (%) with an initial luminance of 100 %
  • the horizontal axis represents driving time (h) of the element.
  • a comparative light-emitting element was fabricated by forming a light-emitting layer with a thickness of 40 nm by co-evaporation with a mass ratio of 2mDBTBPDBq-II (abbreviation) to PCBNBB (abbreviation) and [Ir(tBuppm) 2 (acac)] (abbreviation) being 0.8:0.2:0.05 and forming the other components in a manner similar to that of the light-emitting element 1, and was similarly subjected to a reliability test.
  • the light-emitting element 1 and the comparative light-emitting element were driven under the conditions where the initial luminance was set to 5000 cd/m 2 and the current density was constant. As a result, while the comparative light-emitting element kept about 85 % of the initial luminance after 500 hours elapsed, the light-emitting element 1 kept about 90 % of the initial luminance after 500 hours elapsed.
  • FIG. 12 which is used in the description of the light-emitting element 1 in Example 1 is to be referred to.
  • Chemical formulae of materials used in this example are shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 1100 by a sputtering method, so that a first electrode 1101 functioning as an anode was formed. Note that the thickness was set to 1 10 nm and the electrode area was set to 2 mm x 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • UV ozone treatment was performed for 370 seconds after washing of a surface of the substrate with water and baking that was performed at 200 °C for one hour.
  • the substrate was transferred into a vacuum evaporation apparatus where the pressure had been reduced to approximately 10 -4 Pa, and was subjected to vacuum baking at 170 °C for 30 minutes in a heating chamber of the vacuum evaporation apparatus, and then the substrate 1100 was cooled down for about 30 minutes.
  • the substrate 1100 was fixed to a holder in the vacuum evaporation apparatus so that a surface on which the first electrode 1101 was provided faced downward.
  • a hole-injection layer 11 11 , a hole-transport layer 1112, a light-emitting layer 1113, an electron-transport layer 11 14, and an electron-injection layer 1115 which are included in an EL layer 1102 are sequentially formed by a vacuum evaporation method.
  • BPAFLP 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • molybdenum(VI) oxide was co-evaporated with a mass ratio of BPAFLP (abbreviation) to molybdenum oxide being 1 :0.5, whereby the hole-injection layer 1111 was formed over the first electrode 1101.
  • the thickness of the hole-injection layer 1111 was set to 50 urn.
  • co-evaporation is an evaporation method by which a plurality of different substances is concurrently vaporized from respective different evaporation sources.
  • the hole-transport layer 1112 was formed by evaporation of BPAFLP (abbreviation) to a thickness of 20 nm.
  • the light-emitting layer 1113 was formed over the hole-transport layer 1112.
  • the light-emitting layer 1113 having a stacked-layer structure was formed by forming a first light-emitting layer 1113a with a thickness of 20 nm by co-evaporation of 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[ ⁇ 2]quinoxaline (abbreviation: 2mDBTPDBq-II), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), and (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]) with a mass ratio of 2mDBTPDBq-II (abbreviation) to PCBAIBP (abbreviation) and [Ir(mppm
  • the electron-transport layer 1114 was formed in such a manner that a film of 2mDBTPDBq-II (abbreviation) was formed by evaporation to a thickness of 15 nm and then a film of bathophenanthroline (abbreviation: BPhen) was formed by evaporation to a thickness of 15 nm. Further, over the electron- transport layer 1114, a film of lithium fluoride was formed by evaporation to a thickness of 1 nm to form the electron-injection layer 11 15.
  • a film of 2mDBTPDBq-II abbreviation
  • BPhen bathophenanthroline
  • an aluminum film was formed by evaporation to a thickness of 200 nm as a second electrode 1103 functioning as a cathode.
  • the light-emitting element 2 was fabricated. Note that, in all the above evaporation steps, evaporation was performed by a resistance-heating method.
  • Table 3 shows an element structure of the light-emitting element 2 obtained as described above.
  • the fabricated light-emitting element 2 was sealed in a glove box containing a nitrogen atmosphere so as not to be exposed to air (specifically, a sealant was applied to an outer edge of the element and heat treatment was performed at 80 °C for 1 hour at the time of sealing).
  • FIG. 19 shows current density-luminance characteristics of the light-emitting element 2.
  • the vertical axis represents luminance (cd/m 2 ), and the horizontal axis represents current density (mA/cm 2 ).
  • FIG. 20 shows voltage-luminance characteristics of the light-emitting element 2.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents voltage (V).
  • FIG. 21 shows luminance-current efficiency characteristics of the light-emitting element 2.
  • the vertical axis represents current efficiency (cd/A)
  • the horizontal axis represents luminance (cd/m 2 ).
  • FIG. 22 shows voltage-current characteristics of the light-emitting element 2.
  • the vertical axis represents current (mA)
  • the horizontal axis represents voltage (V).
  • FIG. 21 reveals high efficiency of the light-emitting element 2 that is one embodiment of the present invention.
  • Table 4 shows initial values of main characteristics of the light-emitting element 2 at a luminance of about 1000 cd/m 2 .
  • FIG. 23 shows an emission spectrum when a current at a current density of 25 mA/cm 2 was supplied to the light-emitting element 2.
  • FIG. 23 shows that the emission spectrum of the light-emitting element 2 has peaks at around 550 nm and 620 nm, which indicates that the peaks are derived from emission from the phosphorescent organometallic iridium complexes [Ir(mppm) 2 (acac)] (abbreviation) and [Ir(tppr) 2 (dpm)] (abbreviation).
  • a light-emitting element 3 illustrated in FIG. 24 was fabricated, and its operation characteristics and reliability were measured.
  • the light-emitting element 3 fabricated in this example is a light-emitting element (hereinafter referred to as tandem light-emitting element) in which a charge generation layer is provided between a plurality of EL layers as described in Embodiment 3.
  • Chemical formulae of materials used in this example are shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 3000 by a sputtering method, so that a first electrode 3001 functioning as an anode was formed. Note that the thickness was set to 110 nm and the electrode area was set to 2 mm x 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • UV ozone treatment was performed for 370 seconds after washing of a surface of the substrate with water and baking that was performed at 200 °C for one hour.
  • the substrate was transferred into a vacuum evaporation apparatus where the pressure had been reduced to approximately 10 ⁇ 4 Pa, and was subjected to vacuum baking at 170 °C for 30 minutes in a heating chamber of the vacuum evaporation apparatus, and then the substrate 3000 was cooled down for about 30 minutes.
  • the substrate 3000 was fixed to a holder in the vacuum evaporation apparatus so that a surface on which the first electrode 3001 was provided faced downward.
  • a first hole-injection layer 3011a, a first hole-transport layer 3012a, a light-emitting layer (A) 3013a, a first electron-transport layer 3014a, and a first electron-injection layer 3015a which are included in a first EL layer 3002a are sequentially formed, a charge generation layer 3004 is formed, and then a second hole-injection layer 3011b, a second hole-transport layer 3012b, a light-emitting layer (B) 3013b, a second electron-transport layer 3014b, and a second electron-injection layer 3015b which are included in a second EL layer 3002b are formed by a vacuum evaporation method.
  • the pressure in the vacuum evaporation apparatus was reduced to about 10 ""4 Pa.
  • 9-[4-(9-phenylcarbazol-3-yl)]phenyl-10-phenylanthracene (abbreviation: PCzPA) and molybdenum(VI) oxide were co-evaporated with a mass ratio of PCzPA (abbreviation) to molybdenum oxide being 1 :0.5, whereby the first hole-injection layer 3011a was formed over the first electrode 3001.
  • the thickness of the first hole-inj ection layer 3011a was set to 90 nm.
  • co-evaporation is an evaporation method by which a plurality of different substances is concurrently vaporized from respective different evaporation sources.
  • the first hole-transport layer 3012a was formed by evaporation of PCzPA
  • the light-emitting layer (A) 3013a was formed over the first hole-transport layer 3012a.
  • the light-emitting layer (A) 3013a was formed by co-evaporation of 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA) and N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-l,6-dia mine (abbreviation: 1 ,6mMemFLPAPrn) with a mass ratio of CzPA (abbreviation) to l ,6mMemFLPAPrn (abbreviation) being 1 :0.05.
  • the thickness of the light-emitting layer (A) 3013a was set to 30 nm.
  • the first electron-transport layer 3014a was formed in such a manner that a film of CzPA (abbreviation) was formed by evaporation to a thickness of 5 nm and then a film of bathophenanthroline (abbreviation: BPhen) was formed by evaporation to a thickness of 15 nm. Further, over the first electron-transport layer 3014a, a film of lithium oxide (Li 2 0) was formed by evaporation to a thickness of 0.1 nm to form the first electron-injection layer 3015a.
  • CzPA abbreviation
  • BPhen bathophenanthroline
  • CuPc copper phthalocyanine
  • BPAFLP 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • molybdenum(VI) oxide was co-evaporated with a mass ratio of BPAFLP (abbreviation) to molybdenum oxide being 1 :0.5, whereby the second hole-injection layer 301 1b was formed over the charge generation layer 3004.
  • the thickness of the second hole-injection layer 301 lb was set to 60 nm.
  • the second hole-transport layer 3012b was formed by evaporation of BPAFLP (abbreviation) to a thickness of 20 nm.
  • the light-emitting layer (B) 3013b was formed over the second hole-transport layer 3012b.
  • the light-emitting layer (B) 3013b having a stacked-layer structure was formed by forming a first light-emitting layer 3013(bl) with a thickness of 10 nm by co-evaporation of 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[ ⁇ /z]quinoxaline (abbreviation: 2mDBTPDBq-II), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAIBP), and (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) 2 (acac)]) with a mass ratio of 2mDBTPDBq-II (abbreviation) to PCBAI
  • an aluminum film was formed by evaporation to a thickness of 200 nm as a second electrode 3003 functioning as a cathode.
  • the light-emitting element 3 was fabricated. Note that, in all the above evaporation steps, evaporation was performed by a resistance-heating method.
  • Table 5 shows an element structure of the lightremitting element 3 obtained as described above.
  • the fabricated light-emitting element 3 was sealed in a glove box containing a nitrogen atmosphere so as not to be exposed to air (specifically, a sealant was applied to an outer edge of the element and heat treatment was performed at 80 °C for 1 hour at the time of sealing).
  • FIG. 25 shows current density-luminance characteristics of the light-emitting element 3.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents current density (mA/cm 2 ).
  • FIG. 26 shows voltage-luminance characteristics of the light-emitting element 3.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents voltage (V).
  • FIG. 27 shows luminance-current efficiency characteristics of the light-emitting element 3.
  • the vertical axis represents current efficiency (cd/A)
  • the horizontal axis represents luminance (cd/m 2 ).
  • FIG. 28 shows voltage-current characteristics of the - light-emitting element 3.
  • the vertical axis represents current (mA)
  • the horizontal axis represents voltage (V).
  • FIG. 27 reveals high efficiency of the light-emitting element 3 that is one embodiment of the present invention.
  • Table 6 shows initial values of main characteristics of the light-emitting element 3 at a luminance of about 1000 cd/m 2 .
  • FIG. 29 shows an emission spectrum when a current at a current density of 25 mA/cm 2 was supplied to the light-emitting element 3.
  • FIG. 29 shows that the emission spectrum of the light-emitting element 3 has peaks at 467 nm and 587 nm, which indicates that the peaks are derived from emission from the phosphorescent organometallic iridium complexes contained in the light-emitting layers.
  • a light-emitting element 4 which is one embodiment of the present invention is described with reference to FIG. 12.
  • Chemical formulae of materials used in this example are shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 1100 by a sputtering method, so that a first electrode 1101 functioning as an anode was formed. Note that the thickness was set to 110 nm and the electrode area was set to 2 mm ⁇ 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • UV ozone treatment was performed for 370 seconds after washing of a surface of the substrate with water and baking that was performed at 200 °C for one hour.
  • the substrate was transferred into a vacuum evaporation apparatus where the pressure had been reduced to approximately 10 ⁇ 4 Pa, and was subjected to vacuum baking at 170 °C for 30 minutes in a heating chamber of the vacuum evaporation apparatus, and then the substrate 1 100 was cooled down for about 30 minutes.
  • the substrate 1100 was fixed to a holder in the vacuum evaporation apparatus so that a surface on which the first electrode 1 101 was provided faced downward.
  • a hole-injection layer 11 11, a hole-transport layer 1112, a light-emitting layer 1113, an electron-transport layer 11 14, and an electron-injection layer 1115 which are included in an EL layer 1102 are sequentially formed by a vacuum evaporation method.
  • the pressure in the vacuum evaporation apparatus was reduced to about 10 ⁇ 4 Pa. Then, l ,3,5-tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II) and molybdenum(VI) oxide were co-evaporated with a mass ratio of DBT3P-II (abbreviation) to molybdenum oxide being 4:2, whereby the hole-injection layer 111 1 was formed over the first electrode 1101. The thickness of the hole-injection layer 1111 was set to 20 nm. Note that co-evaporation is an evaporation method by which a plurality of different substances is concurrently vaporized from respective different evaporation sources.
  • the hole-transport layer 1112 was formed by evaporation of 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP) to a thickness of 20 nm.
  • BPAFLP 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • the light-emitting layer 1113 was formed over the hole-transport layer 1112.
  • the light-emitting layer 1113 having a stacked-layer structure was formed by forming a first light-emitting layer 1113a with a thickness of 20 nm by co-evaporation of 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[ ⁇ A]quinoxaline (abbreviation: 2mDBTBPDBq-II), 4,4'-di(l-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), and
  • the electron-transport layer 1114 was formed in such a manner that a film of 2mDBTBPDBq-II (abbreviation) was formed by evaporation to a thickness of 20 nm and then a film of bathophenanthroline (abbreviation: BPhen) was formed by evaporation to a thickness of 20 nm. Further, over the electron-transport layer 1114, a film of lithium fluoride was formed by evaporation to a thickness of 1 nm to form the electron-injection layer 11 15.
  • a film of 2mDBTBPDBq-II abbreviation
  • BPhen bathophenanthroline
  • an aluminum film was formed by evaporation to a thickness of 200 nm as a second electrode 1 103 functioning as a cathode.
  • the light-emitting element 4 was fabricated. Note that, in all the above evaporation steps, evaporation was performed by a resistance-heating method.
  • Table 7 shows an element structure of the light-emitting element 4 obtained as described above.
  • the fabricated light-emitting element 4 was sealed in a glove box containing a nitrogen atmosphere so as not to be exposed to air (specifically, a sealant was applied to an outer edge of the element and heat treatment was performed at 80 °C for 1 hour at the time of sealing).
  • FIG. 30 shows current density-luminance characteristics of the light-emitting element 4.
  • the vertical axis represents luminance (cd/m 2 ), and the horizontal axis represents current density (mA/cm 2 ).
  • FIG. 31 shows voltage-luminance characteristics of the light-emitting element 4.
  • the vertical axis represents luminance (cd/m )
  • the horizontal axis represents voltage (V).
  • FIG. 32 shows luminance-current efficiency characteristics of the light- emitting element 4.
  • the vertical axis represents current efficiency (cd/A)
  • the horizontal axis represents luminance (cd/m 2 ).
  • FIG. 33 shows voltage-current characteristics of the light-emitting element 4.
  • the vertical axis represents current (mA)
  • the horizontal axis represents voltage (V).
  • FIG. 32 reveals high efficiency of the light-emitting element 4 that is one embodiment of the present invention.
  • Table 8 shows initial values of main characteristics of the light-emitting element 4 at a luminance of about 1000 cd/m 2 .
  • the light-emitting element 4 fabricated in this example has high external quantum efficiency, which means its high emission efficiency. Moreover, as for color purity, it can be found that the light-emitting element exhibits orange emission with excellent color purity.
  • FIG. 34 shows an emission spectrum when a current at a current density of 25 mA/cm 2 was supplied to the light-emitting element 4.
  • FIG. 34 shows that the emission spectrum of the light-emitting element 4 has a peak at around 586 nm, which indicates that the peak is derived from emission from the phosphorescent organometalHc iridium complex [Ir(dppm)2(acac)j.
  • FIG. 35 shows results of a reliability test of the light-emitting element 4.
  • the vertical axis represents normalized luminance (%) with an initial luminance of 100 %
  • the horizontal axis represents driving time (h) of the element. Note that in the reliability test, the light-emitting element 4 was driven under the conditions where the initial luminance was set to 5000 cd/m 2 and the current density was constant. As a result, the light-emitting element 4 kept about 94 % of the initial luminance after 1610 hours elapsed.
  • the reliability test revealed that the light-emitting element 4 has high reliability and a long lifetime.
  • a light-emitting element 5 which is one embodiment of the present invention is described with reference to FIG. 12.
  • Chemical formulae of materials used in this example are shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 1100 by a sputtering method, so that a first electrode 1101 functioning as an anode was formed. Note that the thickness was set to 110 nm and the electrode area was set to 2 mm x 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • UV ozone treatment was performed for 370 seconds after washing of a surface of the substrate with water and baking that was performed at 200 °C for one hour.
  • the substrate was transferred into a vacuum evaporation apparatus where the pressure had been reduced to approximately 10 -4 Pa, and was subjected to vacuum baking at 170 °C for 30 minutes in a heating chamber of the vacuum evaporation apparatus, and then the substrate 1100 was cooled down for about 30 minutes.
  • the substrate 1100 was fixed to a holder in the vacuum evaporation apparatus so that a surface on which the first electrode 1101 was provided faced downward.
  • a hole-injection layer 1111 , a hole-transport layer 1112, a light-emitting layer 11 13, an electron-transport layer 1114, and an electron-injection layer 1115 which are included in an EL layer 1102 are sequentially formed by a vacuum evaporation method.
  • the pressure in the vacuum evaporation apparatus was reduced to about 10 ⁇ 4 Pa. Then, l ,3,5-tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II) and molybdenum(VI) oxide were co-evaporated with a mass ratio of DBT3P-II (abbreviation) to molybdenum oxide being 4:2, whereby the hole-injection layer 1111 was formed over the first electrode 1101. The thickness of the hole-injection layer 1111 was set to 20 nm. ' Note that co-evaporation is an evaporation method by which a plurality of different substances is concurrently vaporized from respective different evaporation sources.
  • the hole-transport layer 1112 was formed by evaporation of 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP) to a thickness of 20 nm.
  • BPAFLP 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • the light-emitting layer 1113 was formed over the hole -transport layer 1112.
  • the light-emitting layer 1113 having a stacked- layer structure was formed by forming a first light-emitting layer 1113a with a thickness of 20 nm by co-evaporation of 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[ ⁇ /z]quinoxaline (abbreviation: 2mDBTBPDBq-II), N-( 1 , 1 '-biphenyl-4-yl)-N-[4-(9-ph ⁇
  • PCBBiF en-2-amine
  • the electron-transport layer 1 114 was formed in such a manner that a film of 2mDBTBPDBq-II (abbreviation) was formed by evaporation to a thickness of 20 nm and then a film of bathophenanthroline (abbreviation: BPhen) was formed by evaporation to a thickness of 20 nm. Further, over the electron-transport layer 1 1 14, a film of lithium fluoride was formed by evaporation to a thickness of 1 nm to form the electron-injection layer 1 1 15.
  • a film of 2mDBTBPDBq-II abbreviation
  • BPhen bathophenanthroline
  • an aluminum film was formed by evaporation to a thickness of 200 nm as a second electrode 1 103 functioning as a cathode.
  • the light-emitting element 5 was fabricated. Note that, in all the above evaporation steps, evaporation was performed by a resistance-heating method.
  • Table 9 shows an element structure of the light-emitting element 5 obtained as described above.
  • the fabricated light-emitting element 5 was sealed in a glove box containing a nitrogen atmosphere so as not to be exposed to air (specifically, a sealant was applied to an outer edge of the element and heat treatment was performed at 80 °C for 1 hour at the time of sealing).
  • FIG. 36 shows current density-luminance characteristics of the light-emitting element 5.
  • the vertical axis represents luminance (ed/m 2 ), and the horizontal axis represents current density (mA/cm 2 ).
  • FIG. 37 shows voltage-luminance characteristics of the light-emitting element 5.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents voltage (V).
  • FIG. 38 shows luminance-current efficiency characteristics of the light-emitting element 5.
  • the vertical axis represents current efficiency (cd/A)
  • the horizontal axis represents luminance (cd/m 2 ).
  • FIG. 39 shows voltage-current characteristics of the light-emitting element 5.
  • the vertical axis represents current (mA)
  • the horizontal axis represents voltage (V).
  • FIG. 38 reveals high efficiency of the light-emitting element 5 that is one embodiment of the present invention.
  • Table 10 shows initial values of main characteristics of the light-emitting element 5 at a luminance of about 1000 cd/m 2 .
  • the light-emitting element 5 fabricated in this example has high external quantum efficiency, which means its high emission efficiency. Moreover, as for color purity, it can be found that the light-emitting element exhibits orange emission with excellent color purity.
  • FIG. 40 shows an emission spectrum when a current at a current density of 25 mA/cm 2 was supplied to the light-emitting element 5.
  • FIG. 40 shows that the emission spectrum of the light-emitting element 5 has a peak at around 583 nm, which indicates that the peak is derived from emission from the phosphorescent organometalhc iridium complex [Ir(dppm) 2 (acac)j.
  • FIG. 41 shows results of a reliability test of the light-emitting element 5,
  • the vertical axis represents normalized luminance (%) with an initial luminance of 100 %
  • the horizontal axis represents driving time (h) of the element. Note that in the reliability test, the light-emitting element 5 was driven under the conditions where the initial luminance was set to 5000 cd/m 2 and the current density was constant. As a result, the light-emitting element 5 kept about 92 % of the initial luminance after 1980 hours elapsed.
  • the reliability test revealed that the light-emitting element 5 has high reliability and a long lifetime.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 1100 by a sputtering method, so that a first electrode 1101 functioning as an anode was formed. Note that the thickness was set to 1 10 nm and the electrode area was set to 2 mm x 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • UV ozone treatment was performed for 370 seconds after washing of a surface of the substrate with water and baking that was performed at 200 °C for one hour.
  • the substrate was transferred into a vacuum evaporation apparatus where the pressure had been reduced to approximately 10 ⁇ 4 Pa, and was subjected to vacuum baking at 170 °C for 30 minutes in a heating chamber of the vacuum evaporation apparatus, and then the substrate 1100 was cooled down for about 30 minutes.
  • the substrate 1100 was fixed to a holder in the vacuum evaporation apparatus so that a surface on which the first electrode 1101 was provided faced downward.
  • a hole-injection layer 111 1 , a hole-transport layer 1112, a light-emitting layer 1113, an electron-transport layer 11 14, and an electron-injection layer 1115 which are included in an EL layer 1102 are sequentially formed by a vacuum evaporation method.
  • the pressure in the vacuum evaporation apparatus was reduced to about 10 -4 Pa. Then, l,3,5-tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II) and molybdenum(VI) oxide were co-evaporated with a mass ratio of DBT3P-II (abbreviation) to molybdenum oxide being 4:2, whereby the hole-injection layer 111 1 was formed over the first electrode 1101. The thickness of the hole-injection layer 1111 was set to 20 nm. Note that co-evaporation is an evaporation method by which a plurality of different substances is concurrently vaporized from respective different evaporation sources.
  • the hole-transport layer 1112 was formed by evaporation of
  • BPAFLP 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • the light-emitting layer 1 113 was formed over the hole-transport layer 1 1 12.
  • the light-emitting layer 1 1 13 having a stacked-layer structure was formed by forming a first light-emitting layer 1 1 13a with a thickness of 20 nm by co-evaporation of 2- ⁇ 3-[3-(6-phenyldibenzothiophen-4-yl)phenyl]phenyl ⁇ dibenzo[ ⁇ /z]quinoxaline (abbreviation: 2mDBTBPDBq-IV), N-( 1 , 1 '-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluor en-2-amine (abbreviation: PCBBiF), and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(
  • the electron-transport layer 11 14 was formed in such a manner that a film of 2mDBTBPDBq-IV (abbreviation) was formed by evaporation to a thickness of 20 nm and then a film of bathophenanthroline (abbreviation: BPhen) was formed by evaporation to a thickness of 20 nm. Further, over the electron-transport layer 11 14, a film of lithium fluoride was formed by evaporation to a thickness of 1 nm to form the electron-injection layer 1 115.
  • a film of 2mDBTBPDBq-IV abbreviation
  • BPhen bathophenanthroline
  • an aluminum film was formed by evaporation to a thickness of 200 nm as a second electrode 1 103 functioning as a cathode.
  • the light-emitting element 6 was fabricated. Note that, in all the above evaporation steps, evaporation was performed by a resistance-heating method.
  • Table 11 shows an element structure of the light-emitting element 6 obtained as described above.
  • the fabricated light-emitting element 6 was sealed in a glove box containing a nitrogen atmosphere so as not to be exposed to air (specifically, a sealant was applied to an outer edge of the element and heat treatment was performed at 80 °C for 1 hour at the time of sealing).
  • FIG. 42 shows current density-luminance characteristics of the light-emitting element 6.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents current density (mA/cm 2 ).
  • FIG. 43 shows voltage-luminance characteristics of the light-emitting element 6.
  • the vertical axis represents luminance (cd/m 2 )
  • the horizontal axis represents voltage (V).
  • FIG. 44 shows luminance-current efficiency characteristics of the light-emitting element 6.
  • the vertical axis represents current efficiency (cd/A)
  • the horizontal axis represents luminance (cd/m 2 ).
  • FIG. 45 shows voltage-current characteristics of the light-emitting element 6.
  • the vertical axis represents current (mA)
  • the horizontal axis represents voltage (V).
  • FIG. 44 reveals high efficiency of the light-emitting element 6 that is one embodiment of the present invention.
  • Table 12 below shows initial values of main characteristics of the light-emitting element 6 at a luminance of about 1000 cd/m .
  • the light-emitting element 6 fabricated in this example has high external quantum efficiency, which means its high emission efficiency. Moreover, as for color purity, it can be found that the light-emitting element exhibits orange emission with excellent color purity.
  • FIG. 46 shows an emission spectrum when a current at a current density of 25 mA/cm 2 was supplied to the light-emitting element 6.
  • FIG. 46 shows that the emission spectrum of the light-emitting element 6 has a peak at around 587 nm, which indicates that the peak is derived from emission from the phosphorescent organometallic iridium complex [Ir(dppm) 2 (acac)].
  • FIG. 47 shows results of a reliability test of the light-emitting element 6.
  • the vertical axis represents normalized luminance (%) with an initial luminance of 100 %
  • the horizontal axis represents driving time (h) of the element. Note that in the reliability test, the light-emitting element 6 was driven under the conditions where the initial luminance was set to 5000 cd/m 2 and the current density was constant. As a result, the light-emitting element 6 kept about 91 % of the initial luminance after 833 hours elapsed.
  • 101 anode, 102: cathode, 103: EL layer, 104: hole-injection layer, 105: hole-transport layer, 106: light-emitting layer, 106a: first light-emitting layer, 106b: second light-emitting layer, 107: electron-transport layer, 108: electron-injection layer, 109: phosphorescent compound, 110: first organic compound, 111 : second organic compound, 201 : first electrode (anode), 202: second electrode (cathode), 203: EL layer, 204: hole-injection layer, 205: hole-transport layer, 206: light-emitting layer, 206a: first light-emitting layer, 206b: second light-emitting layer, 207: electron-transport layer, 208: electron-injection layer, 301 : first electrode, 302(1): first EL layer, 302(2): second EL layer, 304: second electrode, 305: charge generation layer (I), 305(1): first electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/JP2013/056211 2012-03-14 2013-02-28 Light-emitting element, light-emitting device, electronic device, and lighting device Ceased WO2013137088A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020207012587A KR20200049908A (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR1020217037507A KR102525931B1 (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
DE112013001439.4T DE112013001439B4 (de) 2012-03-14 2013-02-28 Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
KR1020237031360A KR102677882B1 (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR1020257007917A KR20250036971A (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR1020247020466A KR102781342B1 (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR1020237013628A KR102579886B1 (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR1020147028262A KR102153512B1 (ko) 2012-03-14 2013-02-28 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
CN201380013869.3A CN104471733B (zh) 2012-03-14 2013-02-28 发光元件、发光装置、电子设备及照明装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-056990 2012-03-14
JP2012056990 2012-03-14

Publications (1)

Publication Number Publication Date
WO2013137088A1 true WO2013137088A1 (en) 2013-09-19

Family

ID=49156821

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/056211 Ceased WO2013137088A1 (en) 2012-03-14 2013-02-28 Light-emitting element, light-emitting device, electronic device, and lighting device

Country Status (7)

Country Link
US (4) US9059430B2 (enExample)
JP (6) JP2013219024A (enExample)
KR (7) KR102579886B1 (enExample)
CN (3) CN104471733B (enExample)
DE (3) DE112013001439B4 (enExample)
TW (3) TWI621689B (enExample)
WO (1) WO2013137088A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104270847A (zh) * 2014-10-30 2015-01-07 中国科学院长春应用化学研究所 一种白色有机电致发光器件及其制备方法
US9368742B2 (en) 2013-12-02 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic appliance, and lighting device
CN106169538A (zh) * 2015-05-21 2016-11-30 株式会社半导体能源研究所 发光元件、显示装置、电子设备以及照明装置
US9876056B2 (en) 2014-08-08 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
US10121984B2 (en) 2012-08-10 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US10374186B2 (en) 2013-12-02 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US10439005B2 (en) 2013-08-26 2019-10-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US10686153B2 (en) 2014-05-13 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Exciplex light-emitting device
US11387422B2 (en) 2014-05-30 2022-07-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013232629A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
JP6158543B2 (ja) 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
JP6158542B2 (ja) 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
DE112013002110B4 (de) 2012-04-20 2017-09-07 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
DE112013007882B4 (de) 2012-04-20 2025-10-02 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
US8994013B2 (en) 2012-05-18 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
DE102013208844A1 (de) 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element, lichtemittierende Vorrichtung, Anzeigevorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
TWI651878B (zh) 2012-08-03 2019-02-21 日商半導體能源研究所股份有限公司 發光元件、發光裝置、顯示裝置、電子裝置及照明設備
WO2014157433A1 (en) 2013-03-26 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
JP6286943B2 (ja) * 2013-08-28 2018-03-07 セイコーエプソン株式会社 発光装置および電子機器
TWI685128B (zh) * 2013-10-16 2020-02-11 日商半導體能源研究所股份有限公司 發光元件、發光裝置、電子裝置及照明裝置
JP6488082B2 (ja) * 2013-12-02 2019-03-20 株式会社半導体エネルギー研究所 発光装置、電子機器、および照明装置
KR102089271B1 (ko) * 2013-12-31 2020-03-16 엘지디스플레이 주식회사 유기 발광 장치
CN104091894A (zh) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 一种有机发光二极管、阵列基板及其制备方法、显示装置
US9343691B2 (en) * 2014-08-08 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
KR102245164B1 (ko) * 2014-08-22 2021-04-27 엘지디스플레이 주식회사 유기 발광 소자 및 그의 제조 방법
KR102353647B1 (ko) 2014-08-29 2022-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
US9641919B1 (en) * 2014-09-30 2017-05-02 Amazon Technologies, Inc. Audio assemblies for electronic devices
KR102409803B1 (ko) 2014-10-10 2022-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
US10153449B2 (en) * 2014-10-16 2018-12-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
KR102299838B1 (ko) * 2014-10-31 2021-09-07 엘지디스플레이 주식회사 유기 발광 소자 및 그의 제조 방법
KR102344729B1 (ko) * 2014-12-15 2021-12-31 엘지디스플레이 주식회사 유기전계발광표시장치
US10903440B2 (en) 2015-02-24 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
KR102543330B1 (ko) 2015-02-25 2023-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 소자, 표시 장치, 전자 기기, 및 조명 장치
TWI749726B (zh) * 2015-03-09 2021-12-11 日商半導體能源研究所股份有限公司 發光元件、顯示裝置、電子裝置及照明設備
TWI737594B (zh) * 2015-03-09 2021-09-01 日商半導體能源研究所股份有限公司 發光元件，顯示裝置，電子裝置，與照明裝置
CN104900815A (zh) * 2015-05-26 2015-09-09 京东方科技集团股份有限公司 双层掺杂磷光发光器件及其制备方法
KR20180013958A (ko) * 2015-05-29 2018-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 표시 장치, 전자 기기, 및 조명 장치
TW201721922A (zh) * 2015-09-30 2017-06-16 半導體能源研究所股份有限公司 發光元件，顯示裝置，電子裝置，及照明裝置
CN117551135A (zh) * 2015-09-30 2024-02-13 株式会社半导体能源研究所 有机金属配合物、发光元件、发光装置、电子设备及照明装置
CN109196679B (zh) * 2015-12-01 2021-06-08 株式会社半导体能源研究所 发光元件、发光装置、电子设备及照明装置
JP2017182892A (ja) 2016-03-28 2017-10-05 セイコーエプソン株式会社 発光素子、発光装置、及び電子機器
KR102479135B1 (ko) * 2016-04-18 2022-12-21 롬엔드하스전자재료코리아유한회사 복수 종의 호스트 재료 및 이를 포함하는 유기 전계 발광 소자
CN105895819B (zh) * 2016-04-28 2018-07-06 京东方科技集团股份有限公司 一种oled器件及其制备方法、oled显示面板
CN106449714B (zh) * 2016-11-09 2019-12-17 上海天马有机发光显示技术有限公司 一种有机发光显示面板以及制作方法
US10270039B2 (en) * 2016-11-17 2019-04-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device
WO2018100476A1 (en) 2016-11-30 2018-06-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
CN106449726B (zh) * 2016-12-27 2019-04-26 上海天马有机发光显示技术有限公司 一种oled显示装置及其制作方法
JP6151874B1 (ja) * 2017-02-10 2017-06-21 Ｌｕｍｉｏｔｅｃ株式会社 有機エレクトロルミネッセント装置および照明装置
CN111051313B (zh) * 2017-09-20 2023-06-20 株式会社半导体能源研究所 有机化合物、发光元件、发光装置、电子设备以及照明装置
TW201925147A (zh) * 2017-11-27 2019-07-01 國立交通大學 有機發光顯示裝置
CN108039416A (zh) * 2017-12-06 2018-05-15 华南理工大学 基于量子点电致发光的叠层白光发光二极管及其制备方法
US10741782B2 (en) * 2018-03-22 2020-08-11 Sharp Kabushiki Kaisha Light-emitting device with mixed nanoparticle charge transport layer
CN110600525B (zh) 2019-09-29 2022-06-03 京东方科技集团股份有限公司 一种显示面板、显示装置及其显示方法
US20210151691A1 (en) * 2019-11-14 2021-05-20 Samsung Display Co., Ltd. Organic light-emitting device and apparatus including the same
KR20210076220A (ko) * 2019-12-12 2021-06-24 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 장치
KR102742115B1 (ko) * 2020-01-30 2024-12-16 삼성디스플레이 주식회사 발광 소자
KR102776384B1 (ko) 2020-05-06 2025-03-10 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 전자 장치
US12262575B2 (en) 2020-08-07 2025-03-25 Boe Technology Group Co., Ltd. Display substrate and display device
CN112599688B (zh) * 2020-12-14 2023-10-24 昆山国显光电有限公司 发光器件及显示面板
KR102836161B1 (ko) * 2021-01-28 2025-07-18 삼성디스플레이 주식회사 발광 소자 및 이를 포함한 전자 장치
KR102745350B1 (ko) * 2021-06-08 2024-12-20 삼성전자주식회사 발광 소자 및 이를 포함한 전자 장치
KR20230111636A (ko) * 2022-01-17 2023-07-26 삼성디스플레이 주식회사 표시장치
CN115020463A (zh) * 2022-06-23 2022-09-06 云谷（固安）科技有限公司 显示面板及其制备方法和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142169A (ja) * 1993-11-15 1995-06-02 Mitsubishi Chem Corp 有機電界発光素子
JPH103990A (ja) * 1996-06-13 1998-01-06 Idemitsu Kosan Co Ltd 有機ｅｌ発光装置
US20030189401A1 (en) * 2002-03-26 2003-10-09 International Manufacturing And Engineering Services Co., Ltd. Organic electroluminescent device
US20050064237A1 (en) * 2003-05-27 2005-03-24 Tetsuya Kato Organic EL devices and production process thereof
US20060134464A1 (en) * 2004-12-22 2006-06-22 Fuji Photo Film Co. Ltd Organic electroluminescent element

Family Cites Families (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420288A (en) 1992-04-14 1995-05-30 Ricoh Company, Ltd. Electroluminescent device comprising oxadiazole compounds luminescent material, oxadiazole compounds for the device, and method of producing oxadiazole compounds
JPH0785972A (ja) 1993-09-20 1995-03-31 Toshiba Corp 有機ｅｌ素子
US5597890A (en) 1993-11-01 1997-01-28 Research Corporation Technologies, Inc. Conjugated polymer exciplexes and applications thereof
US5409783A (en) 1994-02-24 1995-04-25 Eastman Kodak Company Red-emitting organic electroluminescent device
US5709492A (en) 1994-04-27 1998-01-20 Sakura Color Products Corp. Liquid applicator
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
KR100934420B1 (ko) 1999-05-13 2009-12-29 더 트러스티즈 오브 프린스턴 유니버시티 전계인광에 기초한 고 효율의 유기 발광장치
JP4449113B2 (ja) * 1999-09-10 2010-04-14 ソニー株式会社 ２次元表示装置
AU2001283274A1 (en) * 2000-08-11 2002-02-25 The Trustees Of Princeton University Organometallic compounds and emission-shifting organic electrophosphorescence
EP1202608B2 (en) * 2000-10-30 2012-02-08 Kabushiki Kaisha Toyota Chuo Kenkyusho Organic light-emitting devices
JP4092901B2 (ja) * 2000-10-30 2008-05-28 株式会社豊田中央研究所 有機電界発光素子
SG2009086778A (en) 2000-12-28 2016-11-29 Semiconductor Energy Lab Co Ltd Luminescent device
TW519770B (en) 2001-01-18 2003-02-01 Semiconductor Energy Lab Light emitting device and manufacturing method thereof
ITTO20010692A1 (it) 2001-07-13 2003-01-13 Consiglio Nazionale Ricerche Dispositivo elettroluminescente organico basato sull'emissione di ecciplessi od elettroplessi e sua realizzazione.
US6863997B2 (en) 2001-12-28 2005-03-08 The Trustees Of Princeton University White light emitting OLEDs from combined monomer and aggregate emission
US6869695B2 (en) 2001-12-28 2005-03-22 The Trustees Of Princeton University White light emitting OLEDs from combined monomer and aggregate emission
US6951694B2 (en) 2002-03-29 2005-10-04 The University Of Southern California Organic light emitting devices with electron blocking layers
ITBO20020165A1 (it) 2002-03-29 2003-09-29 Consiglio Nazionale Ricerche Dispositivo elettroluminescente organico con droganti cromofori
TWI314947B (en) 2002-04-24 2009-09-21 Eastman Kodak Compan Organic light emitting diode devices with improved operational stability
US20030205696A1 (en) * 2002-04-25 2003-11-06 Canon Kabushiki Kaisha Carbazole-based materials for guest-host electroluminescent systems
KR100902988B1 (ko) 2002-08-26 2009-06-15 라이트온 테크놀러지 코포레이션 백색광 발광 다이오드의 제조 방법
TWI316827B (en) 2003-02-27 2009-11-01 Toyota Jidoshokki Kk Organic electroluminescent device
JP4531342B2 (ja) 2003-03-17 2010-08-25 株式会社半導体エネルギー研究所 白色有機発光素子および発光装置
JP3970253B2 (ja) * 2003-03-27 2007-09-05 三洋電機株式会社 有機エレクトロルミネッセンス素子
US7862906B2 (en) * 2003-04-09 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent element and light-emitting device
JP4905445B2 (ja) 2003-05-27 2012-03-28 株式会社デンソー ３級アミン化合物、有機ｅｌ素子用材料および有機ｅｌ素子
EP1484379B1 (en) * 2003-06-02 2016-09-21 Sony Deutschland GmbH A composition for photon-energy up-conversion
US7211823B2 (en) * 2003-07-10 2007-05-01 Universal Display Corporation Organic light emitting device structure for obtaining chromaticity stability
WO2005022660A1 (ja) 2003-08-29 2005-03-10 Matsushita Electric Industrial Co., Ltd. 有機半導体膜、それを用いた電子デバイス、およびそれらの製造方法
US7175922B2 (en) 2003-10-22 2007-02-13 Eastman Kodak Company Aggregate organic light emitting diode devices with improved operational stability
WO2005073338A2 (en) 2003-12-04 2005-08-11 Massachusetts Institute Of Technology Fluorescent, semi-conductive polymers, and devices comprising them
TW200541401A (en) 2004-02-13 2005-12-16 Idemitsu Kosan Co Organic electroluminescent device
JP4441863B2 (ja) * 2004-06-29 2010-03-31 日本精機株式会社 有機ｅｌ素子
DE102004038199A1 (de) 2004-08-05 2006-03-16 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH LED mit niedriger Farbtemperatur
KR101251622B1 (ko) * 2004-09-24 2013-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
JP4312753B2 (ja) * 2004-12-03 2009-08-12 株式会社半導体エネルギー研究所 有機金属錯体
US7597967B2 (en) 2004-12-17 2009-10-06 Eastman Kodak Company Phosphorescent OLEDs with exciton blocking layer
JP2006203172A (ja) * 2004-12-22 2006-08-03 Fuji Photo Film Co Ltd 有機電界発光素子
JP2007073620A (ja) 2005-09-05 2007-03-22 Fujifilm Corp 有機電界発光素子
US20070090756A1 (en) 2005-10-11 2007-04-26 Fujifilm Corporation Organic electroluminescent element
KR101209040B1 (ko) * 2005-11-18 2012-12-06 삼성디스플레이 주식회사 유기 발광 표시 장치
EP1956022B1 (en) 2005-12-01 2012-07-25 Nippon Steel Chemical Co., Ltd. Compound for organic electroluminescent element and organic electroluminescent element
WO2007066556A1 (en) 2005-12-05 2007-06-14 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex and light-emitting element, light-emitting device and electronic device using the same
TWI423981B (zh) 2006-03-21 2014-01-21 Semiconductor Energy Lab 有機金屬錯合物及使用該有機金屬錯合物之發光元件，發光裝置和電子裝置
WO2007108403A1 (en) 2006-03-21 2007-09-27 Semiconductor Energy Laboratory Co., Ltd. Quinoxaline derivative, and light-emitting element, light-emitting device, electronic device using the quinoxaline derivative
CN104091899B (zh) 2006-11-30 2017-01-11 株式会社半导体能源研究所 发光装置
JP5238227B2 (ja) 2006-12-27 2013-07-17 株式会社半導体エネルギー研究所 有機金属錯体および有機金属錯体を用いた発光素子、発光装置、並びに電子機器
US8207526B2 (en) 2007-03-23 2012-06-26 Idemitsu Kosan Co., Ltd. Organic EL device
JP5325393B2 (ja) * 2007-03-30 2013-10-23 ケミプロ化成株式会社 多環式複素環化合物、該化合物よりなるホール輸送材料、ホール発光材料、該化合物を用いた電界効果トランジスタ及び有機ｅｌ素子
JP2008288344A (ja) * 2007-05-16 2008-11-27 Nippon Hoso Kyokai <Nhk> 有機ｅｌ素子
CN101679467B (zh) 2007-05-18 2016-03-02 株式会社半导体能源研究所 有机金属配合物，包含该有机金属配合物的组合物和发光元件
US8034465B2 (en) 2007-06-20 2011-10-11 Global Oled Technology Llc Phosphorescent oled having double exciton-blocking layers
CN101730947A (zh) 2007-07-07 2010-06-09 出光兴产株式会社 有机el元件及含有有机el材料的溶液
US8779655B2 (en) 2007-07-07 2014-07-15 Idemitsu Kosan Co., Ltd. Organic electroluminescence device and material for organic electroluminescence device
EP2166591A4 (en) 2007-07-07 2011-04-27 Idemitsu Kosan Co ORGANIC EL DEVICE
US8211552B2 (en) 2007-07-07 2012-07-03 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
EP2166588A4 (en) 2007-07-07 2011-05-04 Idemitsu Kosan Co ORGANIC EL DEVICE
US8154195B2 (en) 2007-07-07 2012-04-10 Idemitsu Kosan Co., Ltd. Organic electroluminescence device and material for organic electroluminescence device
JPWO2009008346A1 (ja) 2007-07-07 2010-09-09 出光興産株式会社 有機ｅｌ素子
JP5473600B2 (ja) 2007-07-07 2014-04-16 出光興産株式会社 クリセン誘導体及びそれを用いた有機エレクトロルミネッセンス素子
US20090045731A1 (en) 2007-07-07 2009-02-19 Idemitsu Kosan Co., Ltd. Organic electroluminescence device and material for organic electroluminescence device
TW200909560A (en) 2007-07-07 2009-03-01 Idemitsu Kosan Co Organic electroluminescence device and material for organic electroluminescence devcie
TW200911730A (en) 2007-07-07 2009-03-16 Idemitsu Kosan Co Naphthalene derivative, material for organic electroluminescence device, and organic electroluminescence device using the same
KR100933747B1 (ko) * 2008-04-01 2009-12-24 단국대학교 산학협력단 유기 발광 소자
EP2120275A3 (en) * 2008-05-16 2012-08-22 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, lighting apparatus, light-emitting device, electronic appliance, and display
TWI371225B (en) * 2008-06-02 2012-08-21 Ind Tech Res Inst Organic light-emitting device
WO2009157498A1 (en) * 2008-06-25 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex, and lighting apparatus, and electronic device using the organometallic complex
JP5432487B2 (ja) 2008-08-20 2014-03-05 出光興産株式会社 有機エレクトロルミネッセンス素子
JP5325707B2 (ja) 2008-09-01 2013-10-23 株式会社半導体エネルギー研究所 発光素子
CN102217419A (zh) 2008-09-05 2011-10-12 株式会社半导体能源研究所 发光元件、发光器件和电子器件
JP5497284B2 (ja) 2008-12-08 2014-05-21 ユー・ディー・シー アイルランド リミテッド 白色有機電界発光素子
WO2010085676A1 (en) 2009-01-22 2010-07-29 University Of Rochester Hybrid host materials for electrophosphorescent devices
JP5349105B2 (ja) * 2009-03-25 2013-11-20 株式会社東芝 有機電界発光素子
TWI467824B (zh) * 2009-06-11 2015-01-01 Ind Tech Res Inst 白光有機發光元件
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
JP5486440B2 (ja) * 2009-08-27 2014-05-07 日本放送協会 有機ｅｌ素子、表示装置、照明機器
EP2471116B1 (en) 2009-10-05 2013-12-11 Thorn Lighting Ltd Multilayer organic device
KR101352116B1 (ko) 2009-11-24 2014-01-14 엘지디스플레이 주식회사 백색 유기 발광 소자
WO2011070963A1 (ja) 2009-12-07 2011-06-16 新日鐵化学株式会社 有機発光材料及び有機発光素子
CN102130305B (zh) 2010-01-20 2014-02-26 株式会社日立制作所 有机发光层材料、有机发光层形成用涂布液、有机发光元件以及光源装置
JP2011153269A (ja) 2010-01-28 2011-08-11 Nara Institute Of Science & Technology 白色発光性高分子複合材料およびその製造方法
TWI415846B (zh) * 2010-03-01 2013-11-21 Semiconductor Energy Lab 雜環化合物、發光元件、發光裝置、電子裝置、及照明裝置
EP2366753B1 (en) 2010-03-02 2015-06-17 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element and Lighting Device
JP5572004B2 (ja) * 2010-03-29 2014-08-13 ユー・ディー・シー アイルランド リミテッド 白色有機電界発光素子
JP5324513B2 (ja) 2010-03-31 2013-10-23 ユー・ディー・シー アイルランド リミテッド 有機電界発光素子
WO2011125090A1 (ja) * 2010-04-02 2011-10-13 株式会社 日立製作所 有機発光装置およびこれを用いた光源装置
JP2011222334A (ja) * 2010-04-09 2011-11-04 Dainippon Printing Co Ltd 熱伝導性封止部材および素子
JP5602555B2 (ja) * 2010-05-17 2014-10-08 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器及び照明装置
JP2011258373A (ja) * 2010-06-08 2011-12-22 Nippon Hoso Kyokai <Nhk> 有機ｅｌ素子及び有機ｅｌディスプレイ
CN103168043B (zh) 2010-10-22 2016-08-03 株式会社半导体能源研究所 有机金属配合物、发光元件、发光装置、电子设备及照明装置
DE202012013739U1 (de) 2011-02-16 2020-09-30 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element
KR102136480B1 (ko) 2011-02-16 2020-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 엘리먼트
WO2012111680A1 (en) 2011-02-16 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting body, light-emitting layer, and light-emitting device
JP2012195572A (ja) 2011-02-28 2012-10-11 Semiconductor Energy Lab Co Ltd 発光層および発光素子
TWI563702B (en) 2011-02-28 2016-12-21 Semiconductor Energy Lab Co Ltd Light-emitting device
CN105789468B (zh) 2011-03-23 2018-06-08 株式会社半导体能源研究所 发光元件、发光装置、照明装置及电子设备
KR102255816B1 (ko) 2011-03-30 2021-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
KR102159895B1 (ko) 2011-04-07 2020-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
JP2012243983A (ja) * 2011-05-20 2012-12-10 Nippon Hoso Kyokai <Nhk> 有機エレクトロルミネッセンス素子
TWI613195B (zh) 2011-08-25 2018-02-01 半導體能源研究所股份有限公司 發光元件，發光裝置，電子裝置，照明裝置以及新穎有機化合物
US20130164611A1 (en) * 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Power storage device
KR101803537B1 (ko) * 2012-02-09 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
JP2013232629A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
KR101419810B1 (ko) 2012-04-10 2014-07-15 서울대학교산학협력단 엑시플렉스를 형성하는 공동 호스트를 포함하는 유기 발광 소자
JP6158542B2 (ja) 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
JP6158543B2 (ja) 2012-04-13 2017-07-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
DE112013002110B4 (de) 2012-04-20 2017-09-07 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
TWI666299B (zh) * 2012-08-03 2019-07-21 日商半導體能源研究所股份有限公司 發光元件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142169A (ja) * 1993-11-15 1995-06-02 Mitsubishi Chem Corp 有機電界発光素子
JPH103990A (ja) * 1996-06-13 1998-01-06 Idemitsu Kosan Co Ltd 有機ｅｌ発光装置
US20030189401A1 (en) * 2002-03-26 2003-10-09 International Manufacturing And Engineering Services Co., Ltd. Organic electroluminescent device
US20050064237A1 (en) * 2003-05-27 2005-03-24 Tetsuya Kato Organic EL devices and production process thereof
US20060134464A1 (en) * 2004-12-22 2006-06-22 Fuji Photo Film Co. Ltd Organic electroluminescent element

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12029059B2 (en) 2012-08-10 2024-07-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US11690239B2 (en) 2012-08-10 2023-06-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US10121984B2 (en) 2012-08-10 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US11018313B2 (en) 2012-08-10 2021-05-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US10665808B2 (en) 2012-08-10 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US10439005B2 (en) 2013-08-26 2019-10-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US12171127B2 (en) 2013-08-26 2024-12-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US11825718B2 (en) 2013-08-26 2023-11-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US11049908B2 (en) 2013-08-26 2021-06-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US10930873B2 (en) 2013-12-02 2021-02-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US11672136B2 (en) 2013-12-02 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US9368742B2 (en) 2013-12-02 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic appliance, and lighting device
US10374186B2 (en) 2013-12-02 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US12048178B2 (en) 2013-12-02 2024-07-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
CN105981191A (zh) * 2013-12-02 2016-09-28 株式会社半导体能源研究所 发光元件、发光装置、电子设备以及照明装置
CN105981191B (zh) * 2013-12-02 2019-01-22 株式会社半导体能源研究所 发光元件、发光装置、电子设备以及照明装置
US9941483B2 (en) 2013-12-02 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic appliance, and lighting device
US10439158B2 (en) 2013-12-02 2019-10-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic appliance, and lighting device
US10686153B2 (en) 2014-05-13 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Exciplex light-emitting device
US11864403B2 (en) 2014-05-13 2024-01-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device comprising first to third light-emitting layers
US11158832B2 (en) 2014-05-13 2021-10-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with exciplex light-emitting layers
US11387422B2 (en) 2014-05-30 2022-07-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US11832465B2 (en) 2014-05-30 2023-11-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US12400590B2 (en) 2014-05-30 2025-08-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US9876056B2 (en) 2014-08-08 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
US11917882B2 (en) 2014-08-08 2024-02-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
US10854682B2 (en) 2014-08-08 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
CN104270847A (zh) * 2014-10-30 2015-01-07 中国科学院长春应用化学研究所 一种白色有机电致发光器件及其制备方法
CN106169538A (zh) * 2015-05-21 2016-11-30 株式会社半导体能源研究所 发光元件、显示装置、电子设备以及照明装置
US10868256B2 (en) 2015-05-21 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device
US12029114B2 (en) 2015-05-21 2024-07-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device
CN106169538B (zh) * 2015-05-21 2019-10-18 株式会社半导体能源研究所 发光元件、显示装置、电子设备以及照明装置

Also Published As

Publication number Publication date
KR20240097978A (ko) 2024-06-27
KR102781342B1 (ko) 2025-03-12
KR102579886B1 (ko) 2023-09-15
KR20250036971A (ko) 2025-03-14
KR20200049908A (ko) 2020-05-08
JP2013219024A (ja) 2013-10-24
TW201723145A (zh) 2017-07-01
US9590208B2 (en) 2017-03-07
KR102525931B1 (ko) 2023-04-25
US9263693B2 (en) 2016-02-16
US20160164035A1 (en) 2016-06-09
TW201908462A (zh) 2019-03-01
TWI621689B (zh) 2018-04-21
US20170256742A1 (en) 2017-09-07
US20150270504A1 (en) 2015-09-24
DE112013007605B3 (de) 2018-01-18
KR102153512B1 (ko) 2020-09-08
JP2018101636A (ja) 2018-06-28
CN104471733B (zh) 2017-06-09
JP7254876B2 (ja) 2023-04-10
JP2021009855A (ja) 2021-01-28
CN107230744B (zh) 2019-03-08
KR20230061558A (ko) 2023-05-08
DE112013001439B4 (de) 2022-01-20
CN107254306A (zh) 2017-10-17
JP6972276B2 (ja) 2021-11-24
KR20210143336A (ko) 2021-11-26
US9059430B2 (en) 2015-06-16
KR102677882B1 (ko) 2024-06-21
TWI667327B (zh) 2019-08-01
KR20230134623A (ko) 2023-09-21
CN104471733A (zh) 2015-03-25
TW201349614A (zh) 2013-12-01
JP2023073378A (ja) 2023-05-25
US20130240851A1 (en) 2013-09-19
CN107230744A (zh) 2017-10-03
DE112013007607B3 (de) 2018-02-08
US10062867B2 (en) 2018-08-28
KR20140136027A (ko) 2014-11-27
DE112013001439T5 (de) 2015-01-29
TWI586010B (zh) 2017-06-01
JP2025066143A (ja) 2025-04-22
JP6785811B2 (ja) 2020-11-18
CN107254306B (zh) 2020-08-25
JP2022009894A (ja) 2022-01-14

Similar Documents

Publication Publication Date Title
JP7254876B2 (ja) 発光素子、発光装置、電子機器および照明装置
US11393997B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
US10424755B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device each comprising light-emitting layer with mixed organic compounds capable of forming exciplex
US9299944B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
JP7654874B2 (ja) 発光素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13760846

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1120130014394

Country of ref document: DE

Ref document number: 112013001439

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20147028262

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 13760846

Country of ref document: EP

Kind code of ref document: A1

WWD Wipo information: divisional of initial pct application

Ref document number: 1020257007917

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020257007917

Country of ref document: KR