WO2013127236A1 - 阵列基板及其制造方法以及显示装置 - Google Patents
阵列基板及其制造方法以及显示装置 Download PDFInfo
- Publication number
- WO2013127236A1 WO2013127236A1 PCT/CN2012/087234 CN2012087234W WO2013127236A1 WO 2013127236 A1 WO2013127236 A1 WO 2013127236A1 CN 2012087234 W CN2012087234 W CN 2012087234W WO 2013127236 A1 WO2013127236 A1 WO 2013127236A1
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- Prior art keywords
- electrode
- layer
- region
- gate
- insulating layer
- Prior art date
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/01—Function characteristic transmissive
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
Definitions
- the materials used for the first transparent conductive layer and the second transparent conductive layer are preferably selectively wet etched with respect to a wiring metal such as a conductive metal such as Mo, AI, Ti, Cu, or an alloy thereof.
- a wiring metal such as a conductive metal such as Mo, AI, Ti, Cu, or an alloy thereof.
- Materials such as ITO (Indium Tm Oxide), IZO (Indium Zinc Oxide), etc. These materials have good transparency through TCO (Transparent Conducting Oxide) treatment.
- the embodiment further provides a method for manufacturing an array substrate.
- the method includes the following steps. Step 1: using a first metal material to prepare a gate line, a gate 2, and a storage capacitor bottom electrode (not shown), and retain a portion of the first metal material at a position corresponding to the electrode pattern region, thereby forming a portion using the first metal material a concave-convex pattern for forming the reflective region pattern 14, and the first metal material used is preferably Al, AlNd, Mo, or the like;
- the storage capacitor bottom electrode may be a common electrode line (Cst on common) that supplies a constant voltage to the common electrode, or may be a part of the gate line (Cst on Gate).
- the pixel electrode may be in the shape of a plate or a slit, and accordingly the common electrode may be in the shape of a slit or a plate.
- the upper and lower order of the pixel electrode and the common electrode may be reversed, but the upper electrode must be slit-shaped, and the lower electrode must be plate-shaped.
- the present invention also provides a display device comprising the array substrate of any of the above embodiments.
- the display device may be: any product or component having a display function such as a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or the like.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020137008359A KR20130108574A (ko) | 2012-02-28 | 2012-12-23 | 어레이 기판, 어레이 기판 제조 방법, 및 디스플레이 장치 |
| US13/878,475 US20140054581A1 (en) | 2012-02-28 | 2012-12-23 | Array substrate, manufacturing method thereof, and display device |
| EP12837626.6A EP2660651B1 (en) | 2012-02-28 | 2012-12-23 | Array substrate, manufacturing method therefor and display device |
| JP2014557978A JP2015511026A (ja) | 2012-02-28 | 2012-12-23 | アレイ基板及びその製造方法、並びに表示装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210048847.8 | 2012-02-28 | ||
| CN201210048847.8A CN102681276B (zh) | 2012-02-28 | 2012-02-28 | 阵列基板及其制造方法以及包括该阵列基板的显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2013127236A1 true WO2013127236A1 (zh) | 2013-09-06 |
Family
ID=46813420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2012/087234 Ceased WO2013127236A1 (zh) | 2012-02-28 | 2012-12-23 | 阵列基板及其制造方法以及显示装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140054581A1 (enExample) |
| EP (1) | EP2660651B1 (enExample) |
| JP (1) | JP2015511026A (enExample) |
| KR (1) | KR20130108574A (enExample) |
| CN (1) | CN102681276B (enExample) |
| WO (1) | WO2013127236A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017125894A (ja) * | 2016-01-12 | 2017-07-20 | 株式会社 オルタステクノロジー | 薄膜トランジスタアレイ及び反射型表示装置 |
| USRE48855E1 (en) | 2012-03-14 | 2021-12-21 | Daicel Corporation | Process for producing acetic acid |
| CN115079473B (zh) * | 2021-03-12 | 2023-05-02 | 精工爱普生株式会社 | 电光装置和电子设备 |
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| CN202404339U (zh) * | 2012-01-12 | 2012-08-29 | 京东方科技集团股份有限公司 | 阵列基板及包括该阵列基板的显示装置 |
| CN102681276B (zh) * | 2012-02-28 | 2014-07-09 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法以及包括该阵列基板的显示装置 |
| CN102854685A (zh) * | 2012-09-26 | 2013-01-02 | 南京中电熊猫液晶显示科技有限公司 | 一种金属氧化物边缘场开关型液晶显示面板及其制造方法 |
| CN102931139B (zh) * | 2012-11-05 | 2015-07-01 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| CN102998867B (zh) * | 2012-11-20 | 2015-06-03 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及其制作方法以及显示装置 |
| CN103018991B (zh) | 2012-12-24 | 2015-01-28 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
| CN103117284A (zh) * | 2013-02-01 | 2013-05-22 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN103309095B (zh) * | 2013-05-30 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN103309081B (zh) * | 2013-05-30 | 2016-12-28 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| CN103309106B (zh) * | 2013-07-10 | 2015-11-11 | 深圳市华星光电技术有限公司 | 彩色滤光阵列基板及其制造方法 |
| JP6188473B2 (ja) * | 2013-07-31 | 2017-08-30 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板およびその製造方法 |
| CN103487982A (zh) | 2013-08-19 | 2014-01-01 | 京东方科技集团股份有限公司 | 显示装置、阵列基板、像素结构及制作方法 |
| CN103472646B (zh) * | 2013-08-30 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法和显示装置 |
| CN103456764B (zh) * | 2013-09-09 | 2016-01-20 | 京东方科技集团股份有限公司 | Oled阵列基板及其制造方法、显示装置 |
| CN103489826B (zh) * | 2013-09-26 | 2015-08-05 | 京东方科技集团股份有限公司 | 阵列基板、制备方法以及显示装置 |
| TWI642170B (zh) * | 2013-10-18 | 2018-11-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| CN103700669A (zh) * | 2013-12-19 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN103715204B (zh) * | 2013-12-27 | 2015-05-27 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| CN103928472A (zh) * | 2014-03-26 | 2014-07-16 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法和显示装置 |
| CN104090434B (zh) * | 2014-06-25 | 2016-10-05 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
| CN104216186B (zh) * | 2014-08-15 | 2018-01-26 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| CN104332473A (zh) * | 2014-08-29 | 2015-02-04 | 京东方科技集团股份有限公司 | 一种阵列基板、其制备方法、显示面板和显示装置 |
| CN104298040B (zh) | 2014-10-31 | 2018-07-06 | 京东方科技集团股份有限公司 | 一种coa基板及其制作方法和显示装置 |
| CN104317097A (zh) * | 2014-10-31 | 2015-01-28 | 京东方科技集团股份有限公司 | 一种coa基板及其制作方法和显示装置 |
| CN104375344B (zh) * | 2014-11-21 | 2017-09-15 | 深圳市华星光电技术有限公司 | 液晶显示面板及其彩膜阵列基板 |
| CN104536213A (zh) * | 2014-12-19 | 2015-04-22 | 深圳市华星光电技术有限公司 | Ffs阵列基板及液晶显示面板 |
| CN104536194A (zh) | 2015-01-04 | 2015-04-22 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
| CN105842929B (zh) * | 2015-01-12 | 2020-12-29 | 群创光电股份有限公司 | 显示装置 |
| TWI557488B (zh) * | 2015-01-12 | 2016-11-11 | 群創光電股份有限公司 | 顯示裝置 |
| CN104617039A (zh) * | 2015-01-27 | 2015-05-13 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| CN104617109B (zh) * | 2015-01-28 | 2018-04-20 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及其制作方法、液晶显示装置 |
| CN105990231B (zh) * | 2015-02-25 | 2019-10-18 | 南京瀚宇彩欣科技有限责任公司 | 薄膜电晶体基板的制造方法 |
| CN104733456B (zh) | 2015-03-23 | 2018-04-27 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN104765191B (zh) | 2015-04-30 | 2018-07-06 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
| CN104808408B (zh) * | 2015-05-15 | 2018-09-07 | 合肥鑫晟光电科技有限公司 | 一种coa基板、显示装置以及coa基板的制作方法 |
| CN104880847B (zh) * | 2015-06-18 | 2019-04-30 | 深圳市华星光电技术有限公司 | IPS型On Cell触控显示面板及其制作方法 |
| CN104934449B (zh) * | 2015-07-16 | 2017-12-05 | 京东方科技集团股份有限公司 | 显示基板及其制作方法以及显示装置 |
| KR102148491B1 (ko) | 2015-12-14 | 2020-08-26 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판 |
| CN105511177A (zh) * | 2016-02-02 | 2016-04-20 | 京东方科技集团股份有限公司 | 一种阵列基板和液晶显示装置 |
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| CN111694464B (zh) * | 2020-06-19 | 2024-04-19 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2660651B1 (en) | 2018-01-31 |
| KR20130108574A (ko) | 2013-10-04 |
| CN102681276B (zh) | 2014-07-09 |
| CN102681276A (zh) | 2012-09-19 |
| US20140054581A1 (en) | 2014-02-27 |
| EP2660651A1 (en) | 2013-11-06 |
| JP2015511026A (ja) | 2015-04-13 |
| EP2660651A4 (en) | 2015-07-01 |
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