WO2013111477A1 - Procédé de fabrication d'une tête à jet d'encre et tête à jet d'encre - Google Patents
Procédé de fabrication d'une tête à jet d'encre et tête à jet d'encre Download PDFInfo
- Publication number
- WO2013111477A1 WO2013111477A1 PCT/JP2012/082777 JP2012082777W WO2013111477A1 WO 2013111477 A1 WO2013111477 A1 WO 2013111477A1 JP 2012082777 W JP2012082777 W JP 2012082777W WO 2013111477 A1 WO2013111477 A1 WO 2013111477A1
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- WIPO (PCT)
- Prior art keywords
- silicon layer
- groove
- pressure chamber
- flow path
- ink jet
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- 238000005530 etching Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 135
- 230000001629 suppression Effects 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/11—Embodiments of or processes related to ink-jet heads characterised by specific geometrical characteristics
Definitions
- the present invention relates to an ink jet head manufacturing method and an ink jet head, and more specifically, an ink jet head manufacturing method and an ink jet head manufacturing method for causing ink droplets to be ejected from nozzle openings by causing pressure fluctuations in a pressure chamber by vibration of a diaphragm. About.
- a part of the pressure generating chamber that communicates with the nozzle opening that ejects ink is constituted by a diaphragm, the diaphragm is deformed by a piezoelectric vibrator, the pressure generating chamber is pressurized, and ink droplets are ejected from the nozzle opening.
- Ink jet heads are known.
- Patent Document 1 in a method of manufacturing a flow path forming substrate using an SOI substrate, etching is easily and reliably stopped by an etching stop layer (insulator layer) when a pressure chamber is formed by etching a silicon layer. It is described that the pressure chamber is formed with high accuracy.
- Patent Documents 2 and 3 describe a configuration in which a recess is provided between adjacent piezoelectric elements. By providing the recess, the displacement amount of the pressure chamber can be increased and the crosstalk can be reduced.
- Patent Documents 2 and 3 have the following problems.
- Patent Document 2 has a configuration in which a piezoelectric layer is laminated on a diaphragm in which a recess is formed.
- a piezoelectric layer is laminated on a diaphragm in which a recess is formed.
- the thickness of the piezoelectric layer on the recess tends to vary. As a result, there is a problem that the discharge accuracy is lowered.
- Patent Document 3 a recess having a depth reaching at least the side wall forming the pressure chamber is formed.
- the concave portion is formed on the side wall, when the depth of the concave portion varies, the influence on the discharge performance of the nozzle communicating with the adjacent pressure chamber is large, and there is a problem that the discharge accuracy is reduced.
- an object of the present invention is to provide an ink jet head manufacturing method and an ink jet head capable of suitably achieving both suppression of crosstalk and improvement of ink ejection accuracy.
- a method of manufacturing an inkjet head comprising a groove, A first silicon layer constituting the diaphragm; a second silicon layer for forming the pressure chamber; and the first silicon layer and the second silicon layer.
- the flow path forming substrate is formed by laminating an etching stop layer that is not etched under the etching conditions of the silicon layer and the second silicon layer, or is etched at a slower etching rate than the first silicon layer and the second silicon layer. Thereafter, the groove having a depth equal to the thickness of the first silicon layer is formed by performing etching until the etching stop layer is reached from the surface of the first silicon layer of the flow path forming substrate.
- a method of manufacturing an ink-jet head is performed by laminating an etching stop layer that is not etched under the etching conditions of the silicon layer and the second silicon layer, or is etched at a slower etching rate than the first silicon layer and the second silicon layer.
- Etching is performed from the surface of the second silicon layer of the flow path forming substrate until the etching stop layer is reached, thereby forming the pressure chamber having a depth equal to the thickness of the second silicon layer. 4. The method for producing an ink-jet head as described in any one of 1 to 3 above.
- a lower electrode layer serving as a common electrode for driving the plurality of pressure generating means is formed by removing a region overlapping the region where the groove is formed on the surface of the first silicon layer of the flow path forming substrate. 6. The method of manufacturing an ink-jet head according to any one of 1 to 5, wherein the groove is etched using the lower electrode layer as an etching mask.
- An ink-jet head comprising: a first silicon layer constituting the diaphragm; a second silicon layer in which the pressure chamber is formed; and the first silicon.
- an ink jet head manufacturing method and an ink jet head capable of suitably achieving both suppression of crosstalk and improvement of ink ejection accuracy.
- FIG. 1 (ii)-(ii) plane view Sectional view along line (iii)-(iii) in FIG.
- the top view which shows the other example of the head board
- FIG. 1 is a plan view showing an example of a head substrate provided in an ink jet head according to the present invention.
- 2 is a plan view taken along line (ii)-(ii) in FIG. 1
- FIG. 3 is a cross-sectional view taken along line (iii)-(iii) in FIG. 1, showing the layer structure of the head substrate.
- the head substrate H1 is a head substrate, and the head substrate H1 includes a flow path forming substrate 1, a piezoelectric element 2, an intermediate plate 3, and a nozzle plate 4.
- the flow path forming substrate 1 is composed of an etching stop layer 13 and a first silicon layer 11 and a second silicon layer 12 which are provided on both sides thereof and are made of Si.
- the etching stop layer 13 performs etching that proceeds from both surfaces of the flow path forming substrate 1 (the surfaces of the first silicon layer 11 and the second silicon layer 12) toward the etching stop layer 13, and the etching stop layer 13 It has a function that can stop when it reaches 13.
- the etching stop layer 13 has a surface in contact with the first silicon layer 11 and the second silicon layer 12 provided on both surfaces, and Si constituting the first silicon layer 11 and the second silicon layer 12.
- Si constituting the first silicon layer 11 and the second silicon layer 12.
- a material it is not etched under the etching conditions for etching the first silicon layer 11 and the second silicon layer 12, or the etching rate is higher than that of the first silicon layer 11 and the second silicon layer 12.
- Slow ones are used, and specifically, SiO 2 , SiN, SiC and the like can be preferably exemplified.
- SOI Silicon On Insulator
- a plurality of pressure chambers 120 communicating with the nozzle openings 41 for discharging ink are formed in the second silicon layer 12 constituting the flow path forming substrate 1.
- the pressure chamber 120 has the same depth as the thickness of the second silicon layer 12 (the vertical depth in FIGS. 2 and 3).
- Reference numeral 121 denotes a common flow path.
- the common flow path 121 communicates with an ink tank (not shown) and communicates with each pressure chamber 120 via an ink supply path 122 provided for each pressure chamber 120. Yes.
- the ink from the ink tank can be supplied from the common flow path 121 to the pressure chambers 120 via the ink supply path 122.
- the common flow path 121 and the ink supply path 122 are provided in the second silicon layer 12 of the flow path forming substrate 1, and have the same depth as the thickness of the second silicon layer 12, similar to the pressure chamber 120. ing.
- the nozzle plate 4 is bonded to the lower surface (surface on the second silicon layer 12 side) of the flow path forming substrate 1 via the intermediate plate 3.
- the intermediate plate 3 is made of, for example, a glass substrate (Tempax glass or the like) and is anodically bonded to the lower surface of the flow path forming substrate 1.
- the intermediate plate 3 is provided with a through hole 30 that communicates with the pressure chamber 120 and the nozzle opening 41 formed in the nozzle plate 4.
- the nozzle plate 4 includes a through hole 40 that forms a nozzle opening 41 for discharging droplets on the lower surface 4a.
- the nozzle plate 4 is joined to the intermediate plate 3 so that the through holes 40 provided in the nozzle plate 4 communicate with the through holes 30 provided in the intermediate plate. Thereby, the nozzle opening 41 communicates with the pressure chamber 120.
- an ink repellent film is provided on the lower surface 4a of the nozzle plate 4 where the nozzle openings 41 are provided.
- a plurality of piezoelectric elements 2 are provided on the upper surface (surface on the first silicon layer 11 side) 1a of the flow path forming substrate 1 corresponding to each pressure chamber 120. More specifically, the piezoelectric element 2 is a region facing each pressure chamber 120 via the vibration plate 10 composed of the first silicon layer 11 and the etching stop layer 13 that are part of the side wall of the pressure chamber 120. Is provided.
- the piezoelectric element 2 serving as the pressure generating means is deformed by applying a driving voltage, and has a function of causing a pressure fluctuation in the pressure chamber 120 via the diaphragm 10.
- the piezoelectric element 2 is deformed by application of a driving voltage from the driving electrode.
- the piezoelectric element 2 is laminated between a lower electrode layer 21 provided on the upper surface 1a of the flow path forming substrate 1 and serving as a common electrode, and an upper electrode layer 22 provided on the upper surface of the piezoelectric element 2 and serving as an individual electrode.
- the drive voltage can be applied.
- the piezoelectric element 2 and the electrodes 21 and 22 for applying a driving voltage to the piezoelectric element may be bonded to the upper surface 1a of the flow path forming substrate 1 via an adhesive layer, or may be flown by film formation and lithography. It may be formed on the upper surface 1 a of the path forming substrate 1.
- a groove 110 is provided so as to separate the adjacent piezoelectric elements 2 from each other.
- the groove 110 is recessed by being etched from the surface of the first silicon layer 11 of the flow path forming substrate until reaching the etching stop layer.
- the groove 110 is defined at a position where the groove bottom reaches the etching stop layer 13 and has a depth equal to the thickness of the first silicon layer 11.
- the “depth of the groove 110” in the present invention refers to the depth from the upper surface (surface of the first silicon layer 11) 1a of the flow path forming substrate 1 toward the etching stop layer.
- the depth of the groove 110 between the adjacent piezoelectric elements 2 is uniform between any piezoelectric elements 2, crosstalk between the piezoelectric elements 2 can be prevented uniformly, and the displacement of the pressure chamber 120 is also highly accurate. Therefore, it is possible to obtain an effect that it is possible to suitably achieve both suppression of crosstalk and improvement of ink ejection accuracy.
- grooves 110 are provided independently for each adjacent pressure chamber 120 .
- the present invention is not limited to this, and as described below, one groove 110 is provided.
- a groove may be provided in common for two or more between adjacent pressure chambers.
- FIG. 4 is a plan view showing another example of the head substrate provided in the ink jet head according to the present invention.
- the same reference numerals as those in FIGS. 1 to 3 denote the same components.
- one row of nozzle openings 41 is formed by two rows of pressure chambers 120 each having a plurality of pressure chambers 120 arranged in parallel.
- the two rows of pressure chambers 120 are juxtaposed so that the pressure chambers 120 of each row are arranged in a staggered manner.
- one groove 110 having the same depth as that in the example of FIGS. 1 to 3 is provided.
- the depth of the groove 110 between the adjacent piezoelectric elements 2 is uniform between any piezoelectric elements 2, crosstalk between the piezoelectric elements 2 can be prevented uniformly, and the displacement of the pressure chamber 120 is also highly accurate. Therefore, it is possible to obtain an effect that it is possible to suitably achieve both suppression of crosstalk and improvement of ink ejection accuracy.
- the groove 110 is preferably provided at least in a region that does not overlap the pressure chamber 120 in plan view.
- plan view is orthogonal to “a surface fixed to the etching stop layer 11 of one silicon layer 12” and “a surface fixed to the etching stop layer 11 of the other silicon layer 13”. It is synonymous with seeing from the direction to do.
- the groove 110 and the pressure chamber 120 are formed so that the formation regions do not overlap in a plan view, thereby improving the stability of the diaphragm 10 and improving the ink ejection accuracy. An effect that can be further improved is obtained.
- the groove 110 is preferably provided at least in a central portion between the adjacent pressure chambers 120 in a plan view.
- the groove 110 is preferably provided at least at a position where the adjacent pressure chambers 120 are closest to each other in plan view.
- the width of the groove 110 is not particularly limited, but is preferably in the range of 0.5 to 2 times the depth of the groove 110 (that is, the thickness of the other silicon layer).
- the width of the groove 110 is preferably in the range of 0.1 to 0.3 times the closest distance between the adjacent pressure chambers 120.
- the relational expression of “thickness of stop layer 13” + “depth of groove 110” is satisfied.
- the lower electrode layer 21 provided on the upper surface 1a of the flow path forming substrate 1 is preferably provided on the upper surface 1a so as not to cover the inside or upper portion of the groove 110 of the upper surface 1a. .
- the uniformity of the groove 110 formed with high accuracy is not impaired, and both suppression of crosstalk and improvement of ink ejection accuracy can be achieved more suitably.
- the shape of the groove 110 is a straight line
- the shape of the groove 110 is not necessarily a straight line, and may be a curved line.
- the width of the groove 110 is not necessarily equal to the entire width of the groove 110, and the depth direction of the groove 110 or the length direction of the groove 110 (direction parallel to the upper surface 1 a of the flow path forming substrate 1). ) May be partially changed.
- the thicknesses of the first silicon layer 11, the second silicon layer 12, and the etching stop layer 13 are not particularly limited, but the thickness of the first silicon layer 11 is The thickness is preferably in the range of 5 ⁇ m or more and 50 ⁇ m or less, the thickness of the second silicon layer 12 is preferably in the range of 50 ⁇ m or more and 200 ⁇ m or less, and the thickness of the etching stop layer is in the range of 0.5 ⁇ m or more and 2 ⁇ m or less. Is preferred.
- FIG. 5 is a diagram for explaining a first aspect of the method of manufacturing an ink jet head according to the present invention.
- a flow path forming substrate 1 composed of an etching stop layer 13 and a first silicon layer 11 and a second silicon layer 12 both of which are provided on both surfaces of Si is prepared (FIG. 5A).
- a lower electrode layer 21 is laminated in advance on the upper surface (surface on the first silicon layer 11 side) 1 a of the flow path forming substrate 1.
- the pressure chamber 120 is formed by etching a predetermined region of the second silicon layer 12 of the flow path forming substrate 1 from the surface of the second silicon layer 12 until it preferably reaches the etching stop layer ( FIG. 5B).
- a groove 110 is formed (FIG. 5C). )).
- the groove 110 is etched using the lower electrode layer 21 as an etching mask by previously removing a predetermined region of the lower electrode layer 21, that is, a region overlapping with the region where the groove 110 is formed, by lithography. This is preferable because the groove 110 can be formed with high accuracy.
- the piezoelectric element 2 and the upper electrode layer 22 are joined to the region corresponding to the pressure chamber on the upper surface 1a of the flow path forming substrate 1 via the lower electrode layer 21 (FIG. 5D).
- the nozzle plate 4 in which the through hole 40 having one end serving as the nozzle opening 41 is provided on the surface of the flow path forming substrate 1 on the second silicon layer 12 side via the intermediate plate 3 in which the through hole 30 is provided. are bonded to obtain a head substrate H3 (FIG. 5E).
- FIG. 6 is a diagram for explaining a second aspect of the method of manufacturing an ink jet head according to the present invention.
- a flow path forming substrate 1 composed of an etching stop layer 13 and a first silicon layer 11 and a second silicon layer 12 both of which are provided on both sides of Si is prepared (FIG. 6A). .
- the lower electrode layer 21, the piezoelectric layer (piezoelectric element) 2 and the upper electrode layer 22 are formed on the upper surface (surface of the first silicon layer 11) 1a of the flow path forming substrate 1, and each layer 21, 2 and 22 are patterned into a predetermined shape by lithography (FIG. 6B).
- a predetermined region in the first silicon layer 11 of the flow path forming substrate 1 is etched from the surface of the first silicon layer 11 until it reaches the etching stop layer, thereby forming a groove 110 (FIG. 6C). )).
- the groove 110 is etched using the lower electrode layer 21 as an etching mask by previously removing a predetermined region of the lower electrode layer 21, that is, a region overlapping with the region where the groove 110 is formed, by lithography. This is preferable because the groove 110 can be formed with high accuracy.
- the pressure chamber 120 is formed by etching a predetermined region of the second silicon layer 12 of the flow path forming substrate 1 from the surface of the second silicon layer 12 until it preferably reaches the etching stop layer ( FIG. 6 (d)).
- the nozzle plate 4 in which the through hole 40 having one end serving as the nozzle opening 41 is provided on the surface of the flow path forming substrate 1 on the second silicon layer 12 side via the intermediate plate 3 in which the through hole 30 is provided. are bonded to obtain a head substrate H4 (FIG. 6E).
- an ink jet head having a head substrate having the groove 110 similar to that described with reference to FIGS. 1 to 4 can be manufactured.
- the etching stop layer 13 is used when the groove 110 is etched, the position of the groove bottom is defined at a position reaching the etching stop layer 13. A depth equal to the thickness of the silicon layer 11 can be provided with high accuracy.
- the depth of the groove 110 between the adjacent piezoelectric elements 2 can be made uniform between any piezoelectric elements 2, crosstalk between the piezoelectric elements 2 can be prevented uniformly, and the displacement of the pressure chamber 120 can be prevented. Since the amount can be made uniform with high accuracy, it is possible to obtain an effect capable of suitably achieving both suppression of crosstalk and improvement of ink ejection accuracy.
- the etching method for forming the groove 110 and the pressure chamber 120 is not particularly limited.
- an etching gas such as sulfur hexafluoride (SF 6 ) is used.
- the dry etching method used can be preferably used.
- the etching for forming the groove 110 and the pressure chamber 120 it is preferable to use an etching mask. As described above, when the groove 110 is formed, the lower electrode layer 21 serving as a common electrode is used as an etching mask. It is preferable to use as.
- the step of forming the piezoelectric element on the upper surface 1a may be performed in any order.
- the groove 110 can be formed with high accuracy even when the formation of the groove 110 (step (b)) and the formation of the pressure chamber 120 (step (b)) are performed simultaneously by etching.
- the pressure chamber 120 can be formed, it is possible to more easily achieve both the suppression of crosstalk and the improvement of ink ejection accuracy.
Abstract
L'invention concerne un procédé de fabrication d'une tête à jet d'encre et une tête à jet d'encre, capables à la fois d'atténuer la diaphonie et d'améliorer la précision d'éjection de l'encre. Un substrat (1) de formation de canaux est formé en stratifiant une couche (13) bloquant la gravure entre une première couche (11) de silicium et une deuxième couche (12) de silicium. La première couche (11) de silicium forme un diaphragme (10) et est soumise à une pression en provenance d'une pluralité de moyens solidaires générateurs de pression, se déforme et applique une pression d'éjection d'encre à une pluralité de chambres (120) à pression correspondant à chacun des moyens générateurs de pression, et la deuxième couche (12) de silicium forme la pluralité de chambres (120) à pression. La tête à jet d'encre est complétée en réalisant une gravure chimique de la surface de la première couche (11) de silicium à la couche (13) bloquant la gravure afin de former des rainures (110) qui séparent des moyens adjacents générateurs de pression.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2012-011578 | 2012-01-23 | ||
JP2012011578A JP2015062995A (ja) | 2012-01-23 | 2012-01-23 | インクジェットヘッドの製造方法及びインクジェットヘッド |
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WO2013111477A1 true WO2013111477A1 (fr) | 2013-08-01 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2012/082777 WO2013111477A1 (fr) | 2012-01-23 | 2012-12-18 | Procédé de fabrication d'une tête à jet d'encre et tête à jet d'encre |
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JP (1) | JP2015062995A (fr) |
WO (1) | WO2013111477A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015136871A (ja) * | 2014-01-23 | 2015-07-30 | ブラザー工業株式会社 | 液体吐出装置、及び、液体吐出装置の製造方法 |
Citations (5)
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JP2002264346A (ja) * | 2001-03-14 | 2002-09-18 | Ricoh Co Ltd | インクジェットヘッド |
JP2003311954A (ja) * | 2002-02-19 | 2003-11-06 | Brother Ind Ltd | インクジェットヘッド及びこれを有するインクジェットプリンタ |
JP2005041054A (ja) * | 2003-07-25 | 2005-02-17 | Kyocera Corp | 印刷ヘッド及びその製造方法、並びにインクジェットプリンタ |
JP2007203733A (ja) * | 2006-02-01 | 2007-08-16 | Samsung Electronics Co Ltd | 圧電方式のインクジェットプリントヘッド |
JP2010220348A (ja) * | 2009-03-16 | 2010-09-30 | Brother Ind Ltd | 圧電アクチュエータの製造方法、及び、圧電アクチュエータ |
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2012
- 2012-01-23 JP JP2012011578A patent/JP2015062995A/ja active Pending
- 2012-12-18 WO PCT/JP2012/082777 patent/WO2013111477A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002264346A (ja) * | 2001-03-14 | 2002-09-18 | Ricoh Co Ltd | インクジェットヘッド |
JP2003311954A (ja) * | 2002-02-19 | 2003-11-06 | Brother Ind Ltd | インクジェットヘッド及びこれを有するインクジェットプリンタ |
JP2005041054A (ja) * | 2003-07-25 | 2005-02-17 | Kyocera Corp | 印刷ヘッド及びその製造方法、並びにインクジェットプリンタ |
JP2007203733A (ja) * | 2006-02-01 | 2007-08-16 | Samsung Electronics Co Ltd | 圧電方式のインクジェットプリントヘッド |
JP2010220348A (ja) * | 2009-03-16 | 2010-09-30 | Brother Ind Ltd | 圧電アクチュエータの製造方法、及び、圧電アクチュエータ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015136871A (ja) * | 2014-01-23 | 2015-07-30 | ブラザー工業株式会社 | 液体吐出装置、及び、液体吐出装置の製造方法 |
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