WO2018128030A1 - Tête d'impression à jet d'encre, procédé de fabrication de tête d'impression à jet d'encre et dispositif de formation d'image - Google Patents

Tête d'impression à jet d'encre, procédé de fabrication de tête d'impression à jet d'encre et dispositif de formation d'image Download PDF

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Publication number
WO2018128030A1
WO2018128030A1 PCT/JP2017/042327 JP2017042327W WO2018128030A1 WO 2018128030 A1 WO2018128030 A1 WO 2018128030A1 JP 2017042327 W JP2017042327 W JP 2017042327W WO 2018128030 A1 WO2018128030 A1 WO 2018128030A1
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WIPO (PCT)
Prior art keywords
substrate
wiring
pressure chamber
flow path
layer
Prior art date
Application number
PCT/JP2017/042327
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English (en)
Japanese (ja)
Inventor
松尾　隆
與田　光宏
純 塚野
Original Assignee
コニカミノルタ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by コニカミノルタ株式会社 filed Critical コニカミノルタ株式会社
Priority to CN201780081974.9A priority Critical patent/CN110139760B/zh
Priority to JP2018560338A priority patent/JP6950709B2/ja
Publication of WO2018128030A1 publication Critical patent/WO2018128030A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles

Definitions

  • the present invention relates to an ink jet head that discharges ink in a pressure chamber to the outside, a manufacturing method thereof, and an image forming apparatus including the ink jet head.
  • a conventional inkjet head has a plurality of pressure chambers for discharging liquid ink. For each pressure chamber, an actuator for applying discharge pressure to the ink supplied to the pressure chamber and an ink in the pressure chamber are provided. And a nozzle for discharging. Then, ink is directly supplied from the common ink chamber disposed in the upper part to all the pressure chambers, and ink is ejected from the nozzles by applying ejection pressure in each pressure chamber (Patent Document 1). Such an ink-jet head has a small crosstalk and enables high-quality printing.
  • Such an ink jet head generally has a structure in which a nozzle substrate having a nozzle and a pressure chamber, a flow path substrate that accommodates an actuator, and a wiring substrate for supplying electric power to the actuator are laminated. .
  • a nozzle substrate, a flow path substrate, and a wiring substrate are stacked, each substrate is bonded through, for example, an adhesive layer, and the ink in the common ink chamber flows through the individual flow paths of the wiring substrate and the flow path substrate. Supplied to each pressure chamber.
  • a wiring layer for supplying power to the upper electrode of the actuator is formed on the bonding surface of the wiring board and the flow path substrate, and the wiring layer has a predetermined thickness.
  • An insulating oxide film is generally formed on the upper surface of the wiring layer. The thickness of the insulating oxide film is smaller than the thickness of the wiring layer and is formed so as to follow the shape of the wiring layer. Therefore, the wiring layer surface of the wiring substrate has irregularities due to the thickness of the wiring layer. Since the wiring board is bonded to the flow path substrate in a state having an uneven surface caused by the wiring layer, there is a gap between the wiring board and the flow path substrate in the non-wiring area where no wiring is provided. There is a problem of being hit.
  • an object of the present invention is to provide an ink jet head that prevents ink from leaking between a flow path substrate and a wiring layer. It is another object of the present invention to provide a method for manufacturing the ink jet head and an image forming apparatus including the ink jet head.
  • an ink jet head of the present invention includes a pressure chamber substrate having a plurality of pressure chambers and an actuator that is provided for each pressure chamber and changes the volume of the pressure chamber; A nozzle substrate that communicates with each pressure chamber and has a nozzle that ejects liquid by a change in volume of the pressure chamber;
  • a common ink chamber that stores ink and supplies ink to each pressure chamber, a wiring layer having individual wirings that individually supply power to each actuator provided for each pressure chamber, and a wiring layer A space that accommodates the actuator, and a flow path substrate that has a communication flow path that individually communicates the pressure chamber and the common ink chamber, and is bonded to the surface on which the wiring layer is formed.
  • a sealing portion is provided in a region surrounding the communication flow path on the bonding surface between the flow path substrate and the wiring layer and seals the bonding surface in a liquid-tight manner.
  • the inkjet head manufacturing method of the present invention is the above-described inkjet head manufacturing method, in which the flow path substrate or the wiring layer of the flow path substrate before the surface on which the wiring layer is formed and the flow path substrate are bonded together. And a step of forming a sealing portion for sealing the bonding surface in a liquid-tight manner in a region surrounding the communication channel on the bonding surface between the wiring layer and the wiring layer.
  • the image forming apparatus of the present invention includes the above-described inkjet head.
  • the present invention in the ink jet head in which the flow path substrate and the wiring layer are bonded together, it is possible to prevent ink from leaking between the flow path substrate and the wiring layer.
  • FIG. 1 is a schematic configuration diagram of an image forming apparatus according to a first embodiment of the present invention.
  • 1 is a schematic configuration diagram illustrating an appearance of an inkjet head according to a first embodiment of the present invention. It is a schematic block diagram which shows the principal part cross section of the inkjet head which concerns on the 1st Embodiment of this invention.
  • FIG. 4A is a schematic plan configuration diagram when the flow path substrate of the inkjet head according to the first embodiment of the present invention is viewed from the wiring substrate side.
  • FIG. 4B is an enlarged view of a region a1 in FIG. 4A.
  • FIG. 5A is a schematic plan configuration diagram when the wiring layer in the ink jet head according to the first embodiment of the present invention is arranged on the upper part of the flow path substrate.
  • FIG. 5B is an enlarged view of a region a2 in FIG. 5A.
  • 6A to 6C are manufacturing process diagrams when the wiring board and the joined body of the flow path substrate and the nozzle substrate are bonded together. It is a schematic plane block diagram of the principal part when the wiring layer of the inkjet head which concerns on the 2nd Embodiment of this invention is arrange
  • FIG. 1 is a schematic configuration diagram of an image forming apparatus according to the present embodiment.
  • FIG. 1 is a schematic configuration diagram of an image forming apparatus according to the present embodiment.
  • an example of an embodiment using a one-pass drawing method in which drawing is performed only by transporting a recording medium using a line head will be described, but an appropriate drawing method can be employed.
  • the conveyance direction of the recording medium R is the front-rear direction
  • the direction perpendicular to the conveyance direction on the conveyance surface of the recording medium is the left-right direction
  • the direction perpendicular to the front-rear direction and the left-right direction in the vertical direction.
  • the image forming apparatus 100 includes a platen 101, a conveyance roller 102, and a plurality of line heads 103, 104, 105, and 106.
  • the platen 101 is composed of a flat member, and supports the recording medium R on the upper surface.
  • the transport roller 102 is driven, the platen 101 transports the recording medium R in the transport direction (front-rear direction).
  • the line heads 103, 104, 105, 106 are provided in parallel in the width direction (left-right direction) orthogonal to the transport direction, extending from the upstream side to the downstream side in the transport direction (front-rear direction) of the recording medium R. .
  • At least one inkjet head described later is provided.
  • cyan (C), magenta (M), yellow (Y), and black (K ) Is ejected toward the recording medium R.
  • FIG. 2 is a schematic configuration diagram illustrating an appearance of the inkjet head 1 used in the image forming apparatus 100 according to the present embodiment.
  • FIG. 3 is a schematic configuration diagram showing a cross-section of the main part of the inkjet head 1 according to the present embodiment.
  • the inkjet head 1 includes a holding plate 3, an ink manifold 2 attached to the upper portion of the holding plate 3, a flexible circuit board 5, and a head attached to the lower portion of the holding plate 3.
  • Chip 10 the inkjet head 1 includes a holding plate 3, an ink manifold 2 attached to the upper portion of the holding plate 3, a flexible circuit board 5, and a head attached to the lower portion of the holding plate 3.
  • the ink manifold 2 is formed of a resin such as LCP (Liquid Crystal Plastic), and one end portion is closed by an upper surface portion, and the other end portion is formed by a rectangular tube-shaped member opened. .
  • a holding plate 3 is connected to the opened surface of the ink manifold 2, and the inside of the ink manifold 2 is a common ink chamber 8 in which ink supplied from the outside is stored.
  • an ink supply port 6 for supplying ink to the common ink chamber 8 and an ink discharge port 7 for discharging ink from the common ink chamber 8 are provided on the upper surface portion of the ink manifold 2.
  • a filter 9 is provided so as to divide the common ink chamber 8 into a region on the ink supply port 6 side and a region on the head chip 10 side.
  • the filter 9 is composed of a mesh-like member, and is provided to remove foreign matter from the ink supplied from the ink supply port 6 and supply the ink from which the foreign matter has been removed to the head chip 10 side.
  • the holding plate 3 is made of a flat plate-like member having an opening 3b at the center, and made of 42Ni alloy having a linear expansion coefficient close to that of silicon (Si).
  • the ink manifold 2 is bonded to one surface of the holding plate 3, and the head chip 10 is bonded to the other surface.
  • the common ink chamber 8 of the ink manifold 2 and the head chip 10 communicate with each other through the opening 3 b of the holding plate 3.
  • the holding plate 3 is made of a material having a linear expansion coefficient close to that of silicon, thereby ensuring the flatness of the head chip 10 of the present embodiment using the MEMS technology that requires accuracy. can do.
  • the flexible circuit board 5 is connected to a connection portion 63 (see FIG. 5) of the wiring board 30 described later by an anisotropic conductive film. Then, the flexible circuit board 5 is drawn out to the ink manifold 2 side through the insertion hole 3 a provided in the holding plate 3. In the inkjet head 1 of the present embodiment, power is supplied to the upper electrode 53 and the lower common electrode 51 of the actuator 50 described later via the wiring substrate 30 by the flexible circuit board 5.
  • the head chip 10 is held on the opposite side of the holding plate 3 from the side on which the ink manifold 2 is held, as shown in FIG.
  • the head chip 10 includes a nozzle substrate 21, an intermediate substrate 22, a pressure chamber substrate 26, a flow path substrate 29, and a wiring substrate 30, which are arranged from the ink discharge surface side of the inkjet head 1 to the holding plate 3 side. They are stacked in order.
  • FIG. 4A is a schematic plan view of the flow path substrate 29 of the inkjet head 1 of the present embodiment when viewed from the wiring substrate 30 side, and FIG. 4B is an enlarged view of a region a1 in FIG. 4A.
  • 5A is a schematic plan configuration diagram when the wiring layer 31 in the inkjet head 1 according to the present embodiment is arranged on the upper part of the flow path substrate 29, and FIG. 5B is an area a2 in FIG. 5A. It is an enlarged view.
  • the nozzle substrate 21 is composed of, for example, a silicon substrate having a size of 50 to 200 ⁇ m, and a plurality of nozzles 40 having an opening diameter of 10 to 30 ⁇ m and a depth of about 10 to 40 ⁇ m for discharging the ink supplied from the common ink chamber 8 side to the outside. It has a through hole.
  • the nozzle 40 can be formed by removing an unnecessary portion of the silicon substrate by an etching process using photolithography.
  • nozzles 40 are provided on the nozzle substrate 21 and arranged in a matrix.
  • the nozzle 40 is provided so as to communicate with a pressure chamber 27 provided on the pressure chamber substrate 26 described later.
  • the nozzles 40 are arranged at a predetermined nozzle pitch to ensure the necessary nozzle resolution, and FIG. 4A shows an example in which the nozzles 40 have an 8-row structure.
  • the intermediate substrate 22 is made of, for example, a glass substrate, and has a first communication channel 41 that communicates the nozzle 40 and a pressure chamber 27 provided in the pressure chamber substrate 26 described later.
  • the first communication channel 41 can be formed by blasting a predetermined position of the glass substrate.
  • the first communication channel 41 is provided at a position corresponding to each nozzle 40 and is formed to penetrate the intermediate substrate 22.
  • the shape of the ink flow path reaching the nozzle 40 is set to an arbitrary shape, such as a shape in which the diameter of the first communication flow path 41 is reduced, so that the ink flows when flowing through the first communication flow path 41.
  • the kinetic energy applied to the can be adjusted.
  • the intermediate substrate 22 is bonded to the nozzle substrate 21 via an adhesive layer (not shown). Note that the intermediate substrate 22 is not necessarily required, and may have a structure in which the intermediate substrate 22 is not provided.
  • the pressure chamber substrate 26 is composed of an SOI (Silicon on Insulator) substrate in which a support substrate 23 made of Si, a BOX layer 24 made of SiO 2 , and an active layer 25 made of Si are laminated in this order.
  • a plurality of pressure chambers (channels) 27 communicating with each nozzle 40 through the provided first communication flow path 41, a second communication flow path 28, and a pressure generation unit 55 are provided.
  • the thickness of the support substrate 23 of the SOI substrate serving as the pressure chamber substrate 26 is about 50 to 200 ⁇ m
  • the thickness of the BOX layer 24 is about 0.1 ⁇ m
  • the thickness of the active layer 25 is about 10 to 50 ⁇ m.
  • the pressure chamber 27 is a space for individually storing ink supplied from the common ink chamber 8.
  • the second communication channel 28 is a hole that communicates each pressure chamber 27 with a third communication channel 42 described later provided in the channel substrate 29. 4A and 4B, the shapes of the pressure chamber 27 and the second communication channel 28 are indicated by broken lines. As shown in FIG. 4A, the pressure chambers 27 and the second communication channels 28 are provided in a two-dimensional matrix on the support substrate 23 side of the SOI substrate.
  • the pressure chamber 27 has a substantially circular cross section, and the second communication channel 28 is provided so as to protrude from the pressure chamber 27 to a position where the third communication channel 42 is disposed. .
  • the pressure generator 55 includes a diaphragm 47 and an actuator 50. As shown in FIG. 3, the diaphragm 47 is provided on the upper surface of each pressure chamber 27 on the flow path substrate 29 side, and is provided for each pressure chamber 27. The diaphragm 47 is configured by an upper wall portion of the pressure chamber 27 on the flow path substrate 29 side, and is provided integrally with the pressure chamber substrate 26 in which the pressure chamber 27 is formed. In the present embodiment, the diaphragm 47 is constituted by the active layer 25 of the SOI substrate that constitutes the pressure chamber substrate 26.
  • the actuator 50 is provided on the surface of the diaphragm 47 opposite to the side facing the pressure chamber 27, and includes a lower common electrode 51, a piezoelectric layer 52, and an upper electrode 53 that are sequentially stacked from the diaphragm 47 side. ing.
  • the lower common electrode 51 is composed of a thin metal layer.
  • a Ti (titanium) layer and a Pt (platinum) layer are laminated in this order.
  • the Ti layer is formed to about 0.02 ⁇ m, for example, and the Pt layer is formed to about 0.1 ⁇ m, for example.
  • an Au (gold) layer may be formed instead of the Pt layer.
  • the lower common electrode 51 is provided in common to all the pressure chambers 27, and the lower common electrode 51 is grounded by a ground wiring 64 (see FIG. 5A) provided on the wiring substrate 30 described later.
  • the piezoelectric layer 52 can be made of a material that deforms when an electric field having a thickness of about 20 to 100 ⁇ m is applied.
  • the piezoelectric layer 52 is made of a ferroelectric material such as lead zirconate titanate (PZT). Yes.
  • PZT lead zirconate titanate
  • the piezoelectric layer 52 is provided on the vibration plate 47 above the pressure chamber 27 and is formed for each pressure chamber 27 (each channel). In this embodiment, as shown to FIG. 4B, it is formed circularly by planar view.
  • the upper electrode 53 is an electrode provided individually on the top of each piezoelectric layer 52, and is an individual electrode provided corresponding to each pressure chamber 27.
  • the upper electrode 53 is composed of a thin metal layer.
  • the Ti electrode and the Pt layer are laminated in this order.
  • the Ti layer is formed to about 0.02 ⁇ m, for example, and the Pt layer is formed to about 0.1 ⁇ m, for example.
  • an Au (gold) layer may be formed instead of the Pt layer.
  • the upper electrode 53 is formed in a substantially circular shape like the piezoelectric layer 52.
  • the upper electrode 53 has a protrusion at its end, and a stud bump 54 and a solder bump or conductive paste 56 of the individual wiring 39 to be described later are connected to the protrusion.
  • the pressure chamber substrate 26 In the case of forming the pressure chamber substrate 26, first, an SOI substrate is prepared, and a Ti layer having a thickness of about 0.02 ⁇ m and a thickness of 0.02 ⁇ m are formed on the entire surface of the active layer 25 of the SOI substrate by sputtering. A Pt layer having a thickness of about 1 ⁇ m is sequentially formed, and a metal layer to be the lower common electrode 51 is formed. Next, an unnecessary portion of the metal layer is removed by etching using photolithography, and a lower common electrode 51 having a desired shape is formed.
  • the piezoelectric layer 52 and the upper electrode 53 to be the actuator 50 are formed by processing into a predetermined shape by blasting.
  • an electrode layer bonded to the lower common electrode 51 is formed below the piezoelectric layer 52. That is, the laminated body composed of the electrode layer, the piezoelectric layer 52, and the upper electrode 53 is integrally processed.
  • the laminated body including the piezoelectric layer 52 that becomes the actuator 50 and the upper electrode 53 is shared by the lower portion above the vibration plate 47.
  • the upper part of the electrode 51 is joined with an epoxy adhesive or the like. As a result, in the pressure chamber substrate 26, the actuator 50 having a unimorph structure is formed on the vibration plate 47.
  • the piezoelectric layer 52 can be deformed by applying a voltage between the upper electrode 53 and the lower common electrode 51, and thereby the diaphragm 47 can be deformed. Then, due to the deformation of the diaphragm 47, a pressure related to ink ejection is generated in each pressure chamber 27, and ink is ejected from the nozzle 40.
  • the pressure chamber substrate 26 has a surface opposite to the side where the pressure generating portion 55 is formed, for example, bonded to a surface opposite to the nozzle substrate 21 of the intermediate substrate 22 by anodic bonding.
  • the flow path substrate 29 is made of a glass substrate or 42 alloy or the like, and communicates with a space portion 44 that accommodates the actuator 50, each pressure chamber 27, and a fourth communication flow path 43 provided in the wiring substrate 30 described later.
  • the space 44 provided in the flow path substrate 29 is formed for each row of the pressure chambers 27 arranged in a matrix and is provided so as to penetrate the substrate. That is, each actuator 50 corresponding to the pressure chambers 27 adjacent in the row direction is accommodated in the space 44 connected in the row direction.
  • the third communication flow path 42 of the flow path substrate 29 is provided for each pressure chamber 27 and has a circular cross section as shown in FIG. 4A. Further, as shown in FIG. 4A, three lead-through holes 61 for connecting the lower common electrode 51 to the ground are provided at both ends of the flow path substrate 29 in the row direction. 51 is connected to a ground wiring 64 of the wiring board 30 to be described later via a bump 62.
  • the flow path substrate 29 is bonded to the surface of the pressure chamber substrate 26 opposite to the side to which the intermediate substrate 22 is bonded via an adhesive layer (not shown).
  • the wiring substrate 30 includes a silicon layer 32, a wiring layer 31, an insulating layer 45 provided so as to cover the wiring layer 31, and a fourth communication channel 43 that penetrates the silicon layer 32 and the insulating layer 45.
  • the fourth communication channel 43 (wiring board side communication channel of the present invention) communicates the common ink chamber 8 provided in the upper part of the wiring substrate 30 with the third communication channel 42 provided in the channel substrate 29.
  • the silicon layer 32 is provided so as to penetrate therethrough.
  • the fourth communication channel 43 is formed in substantially the same shape as the cross section of the third communication channel 42 at the joint surface with the channel substrate 29, for example, in a circular shape. .
  • the wiring layer 31 is formed on the surface of the silicon layer 32 on the flow path substrate 29 side, and is connected to the individual wiring 39 connected to the upper electrode 53 provided in each pressure generating unit 55 and the ground connected to the lower common electrode 51. It has the wiring 64 and the sealing part 46 provided so that the circumference
  • the individual wiring 39, the ground wiring 64, and the sealing portion 46 are made of aluminum, for example.
  • the individual wiring 39 is connected to each upper electrode 53 constituting each actuator 50 via a stud bump 54 and a solder bump or conductive paste 56, and the individual wiring 39 is formed as shown in FIGS. 5A and 5B.
  • the upper electrode 53 is provided so as to be drawn out to the end of the wiring substrate 30 in the column direction. Both ends of the wiring board 30 in the column direction serve as connection parts 63 to which the flexible circuit board 5 is connected.
  • Each individual wiring 39 is drawn out to the nearer one of the connection parts 63 provided at both ends of the wiring board 30 in the column direction.
  • the upper electrode 53 provided in the pressure chambers 27 for four rows arranged on one side from the center is drawn out to the connection portion 63 on one side.
  • the upper electrodes 53 provided in the pressure chambers 27 for four rows arranged on the other side are drawn out to the connection portion 63 on the other side.
  • the ground wiring 64 connected to the lower common electrode 51 is provided at both ends in the direction orthogonal to the extending direction of the individual wiring 39 of the wiring board 30.
  • a bump 62 connected to the lower common electrode 51 is also formed on the ground wiring 64, and the ground wiring 64 is electrically connected to the lower common electrode 51 via the bump 62.
  • the ground wiring 64 is also provided so as to extend in the same direction as the individual wiring 39, and is connected to the flexible circuit board 5 at the connection portion 63 of the wiring board 30.
  • the individual wiring 39 and the ground wiring 64 are preferably formed as thick and thick as possible in the manufacturable range in order to reduce wiring resistance.
  • the individual wiring 39 and the ground wiring 64 are formed to a thickness of 4 ⁇ m.
  • the sealing portion 46 is formed to have a predetermined width from the side of the fourth communication flow path 43 so as to surround the fourth communication flow path 43.
  • the sealing portion 46 is formed in a circular shape (doughnut shape). Yes. Further, the sealing portion 46 is formed in a size that does not buffer the adjacent individual wiring 39.
  • the sealing portion 46 is preferably formed with a width of about 20 ⁇ m to 200 ⁇ m in the surface direction of the wiring layer 31, preferably a width of 100 ⁇ m or less.
  • the width of the sealing portion 46 in the present embodiment is half the difference between the outer diameter and the inner diameter of the sealing portion 46 provided in a donut shape.
  • the sealing portion 46 is provided as a bank for improving the adhesion between the flow path substrate 29 and the wiring substrate 30 and preventing ink leakage at the boundary surface between the flow path substrate 29 and the wiring substrate 30. is there.
  • the width in the surface direction of the sealing portion 46 is set to 20 ⁇ m or more, the periphery of the ink flow path can be reliably sealed.
  • the channel density has an effect on other wirings, it is preferable that the channel be formed with a width of 200 ⁇ m or less, preferably 100 ⁇ m or less.
  • Such a sealing portion 46 is formed in the same process as the manufacturing process of the individual wiring 39, and is formed to a thickness of 4 ⁇ m like the individual wiring 39 and the ground wiring 64.
  • the insulating layer 45 is made of, for example, SiO 2.
  • the insulating layer 45 is formed on the upper surface of the wiring layer 31 provided on the wiring substrate 30, and the stud bump 54 provided on the individual wiring 39 and the bump 62 provided on the ground wiring 64 are formed. It is provided in the part excluding the region.
  • the insulating layer 45 is formed to a thickness of about 1 ⁇ m, for example, and is formed on the upper surface of the wiring layer 31 so as to follow the shape of the wiring layer 31.
  • the silicon layer 32 is formed on the entire surface of both sides of the silicon layer 32, that is, on the surface between the silicon layer 32 and the wiring layer 31 and on the surface opposite to the surface on which the wiring layer 31 is formed.
  • the insulating layer for protecting the film is omitted.
  • the wiring board 30 having such a configuration is bonded via an adhesive layer (not shown) so that the surface on the wiring layer 31 side is bonded to the flow path substrate 29.
  • a silicon substrate to be the silicon layer 32 is prepared, an insulating layer (not shown) made of SiO 2 is formed on the entire surface of one side of the silicon substrate, and an Al layer is formed on the upper surface. Then, unnecessary portions of the Al layer are removed by etching using photolithography, thereby forming the wiring layer 31 having the individual wiring 39, the ground wiring 64, and the sealing portion 46 having a desired shape. Thereafter, an insulating layer 45 made of SiO 2 is formed on the wiring layer 31. In the insulating layer 45, the regions where the stud bumps 54 and the solder bumps 56 of the individual wiring 39 and the bumps 62 of the ground wiring 64 are formed are removed by etching.
  • an insulating layer (not shown) made of SiO 2 is formed on the entire surface of the silicon substrate opposite to the side on which the wiring layer 31 is formed.
  • the fourth communication channel 43 is formed by removing unnecessary portions of the insulating layer and the silicon substrate by etching using photolithography.
  • a stud bump 54 is formed at a predetermined position of the individual wiring 39 by wire bonding using a fine metal wire.
  • solder bumps 56 are formed on the stud bumps 54 in order to ensure the reliability of electrical bonding when the wiring substrate 30 and the flow path substrate 29 are bonded together.
  • the bump 62 of the ground wiring 64 is also formed.
  • the conductive paste 56 may be applied to the tip of the stud bump by transfer or the like instead of the solder bump. Thereby, the wiring board 30 is formed.
  • FIG. 6A to 6C are manufacturing process diagrams at the time of bonding the wiring substrate 30 to the bonded body of the flow path substrate 29, the pressure chamber substrate 26, the intermediate substrate 22 and the nozzle substrate 21.
  • FIG. 6A a wiring substrate 30 (see FIG. 6A) and a joined body (see FIG. 6B) in which the flow path substrate 29, the pressure chamber substrate 26, the intermediate substrate 22, and the nozzle substrate 21 are joined are prepared.
  • the bonded body of the flow path substrate 29, the pressure chamber substrate 26, the intermediate substrate 22, and the nozzle substrate 21 is obtained by sequentially bonding the nozzle substrate 21, the intermediate substrate 22, the pressure chamber substrate 26, and the flow path substrate 29 as described above. Form.
  • an adhesive layer (not shown) is formed on the surface of the flow path substrate 29 in the joined body of the flow path substrate 29, the pressure chamber substrate 26, the intermediate substrate 22, and the nozzle substrate 21. Since it is necessary to apply the adhesive layer uniformly on the entire surface, it is preferable to apply the adhesive layer using a transfer or printing technique. Thereafter, the surface side of the wiring layer 31 of the wiring substrate 30 and the flow path substrate 29 face each other and are aligned using an alignment mark (not shown). Then, as shown in FIG. 6C, the wiring board 30 is bonded onto the flow path board 29.
  • the individual wiring 39 is electrically connected to the upper electrode 53 of the pressure generating unit 55 by bonding the wiring board 30 to the joined body of the flow path board 29, the pressure chamber board 26, the intermediate board 22, and the nozzle board 21.
  • the ground wiring 64 is electrically connected to the lower common electrode 51. Thereby, the head chip 10 is completed.
  • the wiring board 30 side of the head chip 10 is bonded to the common ink chamber 8 side of the ink manifold 2 via the holding plate 3, and the connection portion 63 provided on the wiring board 30 is anisotropic.
  • the inkjet head 1 is completed by joining the flexible circuit board 5 via a conductive film.
  • the ink supplied to the common ink chamber 8 is supplied to each pressure chamber 27 via the fourth communication channel 43, the third communication channel 42, and the second communication channel 28.
  • the In the pressure generation unit 55 the actuator 50 generates a deflection deformation by applying an electric field to the piezoelectric layer 52, and the deflection deformation gives a volume change of the pressure chamber 27 through the diaphragm. As a result, a pressure change due to a volume change occurs in the pressure chamber 27, and the ink supplied to the inside is ejected to the outside through the first communication channel 41 and the nozzle 40.
  • a bank-shaped sealing portion 46 is provided around the fourth communication flow path 43 in the wiring board 30, and the bank-shaped sealing portion 46 is provided with other individual wirings 39 and ground wirings. Since it is formed at the same height as 64, it is the highest portion of the uneven surface of the wiring layer 31 surface. Accordingly, the sealing portion 46 is securely bonded to the surface of the flow path substrate 29 when the wiring substrate 30 and the flow path substrate 29 are bonded together.
  • the surface of the wiring board 30 on the wiring layer 31 side has irregularities due to the wiring layer 31. Therefore, in the case of the structure having no sealing portion as in the conventional ink jet head, the periphery of the fourth communication flow path 43 is concave, and there is a gap between the surface of the wiring layer 31 and the flow path substrate 29, and the ink The possibility of leak increases. On the other hand, if the application amount of the adhesive is increased to fill the gap, the adhesive may overflow the ink flow path and block the flow path.
  • the sealing portion 46 can be formed simultaneously with the individual wiring 39 and the ground wiring 64 when the wiring layer 31 is formed. Therefore, it is not necessary to provide a separate process for forming the sealing portion 46.
  • the wiring layer 31 is described using an example in which the wiring layer 31 is formed only on one surface of the wiring substrate 30, but the present invention can also be applied to a configuration having the wiring layer 31 on both surfaces of the wiring substrate 30. it can. Also in this case, the same effect as that of the present embodiment can be obtained by forming the sealing portion 46 in the wiring layer 31 on the flow path substrate 29 side of the wiring substrate 30. Moreover, in this embodiment, although the external shape of the sealing part 46 was comprised by the circular shaped member, it is not restricted to this, For example, a rectangular shape may be sufficient.
  • FIG. 7 is a schematic plan configuration diagram when the wiring layer 72 of the ink jet head 70 of the present embodiment is disposed on the flow path substrate 29. As in FIG. 5B, a portion corresponding to a part of the pressure chambers 27 is enlarged. As shown. In FIG. 7, parts corresponding to those in FIG.
  • the sealing portion 46 formed in the wiring layer 72 and the individual wiring 71 are connected.
  • the configuration of the sealing portion 46 is the same as that of the first embodiment.
  • the individual wiring 71 is coupled to the sealing portion 46 and is connected to the upper electrode 53 via the stud bump 54 and the solder bump 56 or the conductive paste and extends to the connection portion 63 at the end of the wiring substrate 30. Arranged.
  • the sealing portion 46 as a part of the individual wiring 71, it is possible to perform wiring so as to straddle the fourth communication flow path 43. For this reason, the area
  • FIG. 8 is a schematic configuration diagram when the surface on which the wiring layer 92 of the ink jet head 80 of the present embodiment is formed is viewed from above, and FIG. It is a block diagram.
  • the inkjet head 80 of this embodiment is different from that of the first embodiment in that the individual wiring 91 is directly provided on the pressure chamber substrate 26 and there is no wiring substrate.
  • parts corresponding to those in FIG. are identical to those in FIG.
  • the head chip 99 of the inkjet head 80 of the present embodiment includes a nozzle substrate 21, an intermediate substrate 22, a pressure chamber substrate 97, a flow path substrate 88, and an ink ejection surface side of the inkjet head 80. To the holding plate 3 side in this order.
  • the pressure chamber substrate 97 is composed of an SOI (Silicon on Insulator) substrate in which a support substrate 23 made of Si, a BOX layer 24 made of SiO 2 , and an active layer 25 made of Si are laminated in this order. It has a plurality of pressure chambers (channels) 27 that communicate with each nozzle 40 via the provided first communication flow path 41, a second communication flow path 28, and a pressure generator 81.
  • the pressure generation unit 81 includes a diaphragm 47 and an actuator 85.
  • the configuration of the pressure chamber 27, the second communication channel 28, and the diaphragm 47 is the same as that of the first embodiment.
  • the actuator 85 is provided on the surface of the diaphragm 47 opposite to the side facing the pressure chamber 27, and includes a lower common electrode 82, a piezoelectric layer 83, and an upper electrode 84 that are sequentially stacked from the diaphragm 47 side. It is configured.
  • the upper electrode 84 of this embodiment is formed in the same layer as the wiring layer 92 that constitutes the sealing portion 93 and the individual wiring 91, and is connected to the sealing portion 93 and the individual wiring 91.
  • the lower common electrode 82 is composed of a thin metal layer. In this embodiment, a Ti (titanium) layer and a Pt (platinum) layer are laminated in this order.
  • the lower common electrode 82 is provided in common on the upper surfaces of all the diaphragms 47.
  • the Ti layer is formed to about 0.02 ⁇ m, for example, and the Pt layer is formed to about 0.1 ⁇ m, for example.
  • the lower common electrode 82 is grounded at the end of the pressure chamber substrate 26.
  • the piezoelectric layer 83 can be made of a material that deforms when an electric field is applied.
  • the piezoelectric layer 83 is made of a ferroelectric material such as lead zirconate titanate (PZT).
  • PZT lead zirconate titanate
  • the piezoelectric layer 83 is provided on the vibration plate 47 and is formed for each pressure chamber 27 (each channel).
  • the piezoelectric layer 83 is composed of a thin film PZT (corresponding to the thin film piezoelectric layer of the present invention) that can be formed using sputtering or a sol-gel method. In this embodiment, as shown in FIG. 8, it is formed in an elliptical shape in plan view.
  • the upper electrode 84 is individually provided on the upper portion of each piezoelectric layer 83. As shown in FIG. 8, the upper electrode 84 is formed in the same shape as the piezoelectric layer 83.
  • the wiring layer 92 is provided so as to extend from the upper part of the piezoelectric layer 83 to the end connected to the flexible circuit board 5 and to surround the second communication channel 28 in a donut shape.
  • the wiring layer 92 around the second communication flow path 28 constitutes the sealing portion 93, and a portion extending toward the end portion as shown in FIG.
  • the individual wiring 91 is configured.
  • the wiring layer 92 is configured so that a part thereof runs on the upper electrode 84.
  • the upper electrode 84, the sealing portion 93, and the individual wiring 91 are connected for each channel.
  • the individual wiring 91 is connected to the flexible circuit board 5 at the end portion of the pressure chamber substrate 26, whereby a desired voltage is applied to the actuator 85. That is, in the present embodiment, the pressure chamber substrate 26 also serves as a wiring substrate.
  • an insulating layer 86 is formed between the wiring layer 92 and the lower common electrode 82 other than the region where the piezoelectric layer 83 is formed, and further, on the upper side of the wiring layer 92 on the flow path substrate 88 side.
  • An insulating layer 87 is formed on the entire surface.
  • an SOI substrate constituting the pressure chamber substrate 97 is prepared.
  • a support substrate 23 made of Si, a BOX layer 24 made of SiO 2 , and an active layer 25 made of Si are laminated in this order, and the thickness of the support substrate 23 is about 50 to 200 ⁇ m.
  • a Ti layer having a thickness of about 0.2 ⁇ m and a Pt layer having a thickness of about 0.1 ⁇ m are sequentially formed on the surface of the active layer 25 by sputtering, thereby forming a metal layer to be the lower common electrode 82.
  • a PZT layer serving as the piezoelectric layer 83 is formed on the entire surface of the metal layer serving as the lower common electrode 82 by using, for example, a sputtering method.
  • a Ti layer and a Pt layer having a thickness of about 0.1 ⁇ m are sequentially formed, and a metal layer to be the upper electrode 84 is formed.
  • the upper electrode 84 and the piezoelectric layer 83 are formed by removing excess portions of the metal layer and the PZT layer serving as the upper electrode by etching using photolithography.
  • an excess portion of the metal layer is similarly removed by etching using photolithography to form a lower common electrode 82.
  • an insulating material layer is formed on the entire surface, an area above the piezoelectric layer 83 is removed by etching using photolithography, and an insulating layer 86 is formed. Thereafter, a metal layer to be the wiring layer 92 such as Al (aluminum) is formed. Then, an excess portion of the metal layer is removed by etching using photolithography, and the wiring layer 92 including the individual wiring 91 and the sealing portion 93 is formed. Then, an insulating layer 87 is formed on the entire surface on which the wiring layer 92 is formed.
  • the individual wiring 91 and the sealing portion 93 are formed on the upper portion of the pressure chamber substrate 97 after the formation of the upper electrode 84 constituting the actuator 85 as described above. Thereby, it is not necessary to form a separate wiring board.
  • the flow path substrate 88 is made of a glass substrate, 42 alloy, or the like, and has a space portion 90 that accommodates the actuator 85 and a third communication flow path 89 that communicates each pressure chamber 27 with the common ink chamber 8.
  • the common ink chamber 8 is disposed above the flow path substrate 88.
  • the space portion 90 that accommodates the actuator 85 is configured by a groove portion that does not penetrate the flow path substrate 88 and is formed at a predetermined depth from the pressure chamber substrate 97 side.
  • the head chip 99 is completed by bonding the flow path substrate 88 on the wiring layer 92 above the pressure chamber substrate 97 using an adhesive. Since the sealing portion 93 is formed around the third communication flow path 89 and the second communication flow path 28, the upper surface of the sealing portion 93 flows when the flow path substrate 88 and the nozzle substrate 98 are bonded together. Bonding is performed so as to be in close contact with the bonding surface of the road substrate 88. Accordingly, it is possible to prevent ink from leaking between the wiring layer 92 and the nozzle substrate 98 at the boundary between the third communication channel 89 and the second communication channel 28.
  • the piezoelectric layer 83 can be directly formed on the Si substrate by a sputtering method, a sol-gel method, or the like.
  • the thin film PZT has a thin film thickness of about 1 to 5 ⁇ m, and a large displacement can be obtained with a small area. Therefore, the actuator 85 can be arranged at a higher density, and the head chip 99 can be downsized. Further, since the piezoelectric layer 83 can be directly patterned on the Si substrate, the individual wiring 91 connected to the upper electrode 84 can be configured in the same plane, and the wiring substrate can be eliminated.
  • the wiring layer 92 is formed so as to run over the upper electrode 84.
  • the upper electrode 84 and the wiring layer 92 may be integrally formed by changing the pattern of the upper electrode 84. . In this case, since the upper electrode 84 and the wiring layer 92 can be formed at a time, the number of processes can be reduced.
  • corrugation resulting from the wiring layer 92 is formed in the surface in which the wiring layer 92 of the nozzle substrate 98 is formed. Therefore, when the nozzle substrate 98 and the flow path substrate 88 are bonded together, a gap due to the uneven surface due to the wiring layer 92 is generated.
  • the sealing portion 93 so as to surround the second communication channel 28, the flow channel is formed at the boundary between the second communication channel 28 and the third communication channel 89. The substrate 88 and the nozzle substrate 98 can be bonded together in a liquid-tight manner. Thereby, ink leakage between the flow path substrate 88 and the nozzle substrate 98 can be prevented.
  • the sealing portion is formed in the wiring layer.
  • the sealing portion may be formed by a member different from the wiring layer.
  • an insulating layer having the same height as the wiring may be formed. May be.
  • the sealing portion may be provided not on the wiring layer side but on the surface side to be bonded to the wiring layer.
  • any structure may be used as long as the gap between the bonding surfaces due to the uneven shape of the wiring layer can be sealed around the flow path of the ink. For this reason, the effect of the present invention can be obtained by forming the sealing portion having a height equal to or higher than the height of the wiring layer.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

L'invention concerne un tête d'impression à jet d'encre comprenant : un substrat pour trajet d'écoulement qui présente une partie vide accueillant un actionneur, et un trajet d'écoulement de communication qui communique séparément avec une chambre de pression et une chambre d'encre partagée, le substrat pour trajet d'écoulement étant lié à une surface sur laquelle une couche de câblage imprimé est formée ; et une partie d'étanchéité qui est disposée dans une zone entourant le trajet d'écoulement de communication sur une surface de liaison pour lier les surfaces sur lesquelles le substrat pour trajet d'écoulement et la couche de câblage imprimé sont formés, la partie d'étanchéité scellant de manière étanche aux liquides la surface de liaison.
PCT/JP2017/042327 2017-01-06 2017-11-27 Tête d'impression à jet d'encre, procédé de fabrication de tête d'impression à jet d'encre et dispositif de formation d'image WO2018128030A1 (fr)

Priority Applications (2)

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CN201780081974.9A CN110139760B (zh) 2017-01-06 2017-11-27 喷墨头、喷墨头的制造方法以及图像形成装置
JP2018560338A JP6950709B2 (ja) 2017-01-06 2017-11-27 インクジェットヘッド及び画像形成装置

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JP2017-000856 2017-01-06
JP2017000856 2017-01-06

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CN113165380A (zh) * 2018-11-29 2021-07-23 京瓷株式会社 液体喷出头以及记录装置
WO2023190353A1 (fr) * 2022-03-29 2023-10-05 京セラ株式会社 Tête de distribution de liquide et dispositif d'enregistrement

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JP2011115972A (ja) * 2009-12-01 2011-06-16 Konica Minolta Holdings Inc インクジェットヘッド
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WO2015080033A1 (fr) * 2013-11-29 2015-06-04 コニカミノルタ株式会社 Substrat de câblage et tête à jet d'encre
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JP2016165863A (ja) * 2015-03-10 2016-09-15 セイコーエプソン株式会社 ヘッド及び液体噴射装置

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JP5977923B2 (ja) * 2011-03-07 2016-08-24 セイコーエプソン株式会社 液体噴射ヘッド、その製造方法及び液体噴射装置

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JP2002086724A (ja) * 2000-09-19 2002-03-26 Seiko Epson Corp インクジェット式記録ヘッド及びインクジェット式記録装置
JP2011115972A (ja) * 2009-12-01 2011-06-16 Konica Minolta Holdings Inc インクジェットヘッド
WO2012165041A1 (fr) * 2011-05-31 2012-12-06 コニカミノルタホールディングス株式会社 Tête à jet d'encre et dispositif de dessin à jet d'encre équipé de celle-ci
JP2013049191A (ja) * 2011-08-31 2013-03-14 Ricoh Co Ltd インクジェットヘッド及び記録装置
WO2015080033A1 (fr) * 2013-11-29 2015-06-04 コニカミノルタ株式会社 Substrat de câblage et tête à jet d'encre
US20160096386A1 (en) * 2014-10-02 2016-04-07 Ricoh Company, Ltd. Head device, apparatus incorporating the head device, liquid discharge device, and apparatus for discharging liquid
JP2016165863A (ja) * 2015-03-10 2016-09-15 セイコーエプソン株式会社 ヘッド及び液体噴射装置

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Publication number Priority date Publication date Assignee Title
CN113165380A (zh) * 2018-11-29 2021-07-23 京瓷株式会社 液体喷出头以及记录装置
CN113165380B (zh) * 2018-11-29 2022-09-23 京瓷株式会社 液体喷出头以及记录装置
WO2023190353A1 (fr) * 2022-03-29 2023-10-05 京セラ株式会社 Tête de distribution de liquide et dispositif d'enregistrement

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CN110139760A (zh) 2019-08-16
JPWO2018128030A1 (ja) 2019-11-07
CN110139760B (zh) 2021-08-20

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