WO2013099135A1 - フレキシブル表示装置 - Google Patents
フレキシブル表示装置 Download PDFInfo
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- WO2013099135A1 WO2013099135A1 PCT/JP2012/007995 JP2012007995W WO2013099135A1 WO 2013099135 A1 WO2013099135 A1 WO 2013099135A1 JP 2012007995 W JP2012007995 W JP 2012007995W WO 2013099135 A1 WO2013099135 A1 WO 2013099135A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/118—Printed elements for providing electric connections to or between printed circuits specially for flexible printed circuits, e.g. using folded portions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0221—Insulating particles having an electrically conductive coating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
Definitions
- the present invention relates to a flexible display device, and more particularly, to a connection structure between a device substrate and a flexible circuit substrate via an ACF (Anisotropic Conductive Film).
- ACF Anagonal Conductive Film
- the terminal part of the device substrate and the terminal part of the flexible circuit board are electrically connected by conductive particles contained in the ACF.
- a pressure is applied from above with the ACF 830 disposed therebetween, and the ACF 830 is pressure-bonded to the device substrate 810 and the flexible circuit substrate 820 as shown in FIG. 9B, and the conductive particles 831 included in the ACF 830 are attached to both ends.
- both terminal parts 812 and 822 are electrically connected through the conductive particles 831. At that time, if the crushed conductive particles 831 are deformed into a flat shape, the contact area between the conductive particles 831 and each of the terminal portions 812 and 822 is increased, so that the electrical connection is stabilized.
- the thickness of the terminal portion 812 of the device substrate 810 is very thin (for example, 0.5 ⁇ m), the hard and thick glass substrate 811 is present below the terminal portion 812, so that the conductive particles 831 are used in the pressure bonding. Even if strongly pressed, the terminal portion 812 is not easily deformed.
- the thickness of the terminal portion 822 of the flexible circuit board 820 is relatively thick (for example, 8 ⁇ m), it is not easily deformed at the time of crimping. Since both the terminal portions 812 and 822 are not deformed in this way, the conductive particles 831 existing between the terminal portions 812 and 822 can be appropriately crushed into a flat shape at the time of pressure bonding.
- Patent Document 1 As shown in FIG. 10A, a terminal portion 912 provided on the flexible substrate 911 of the device substrate 910 and a terminal portion 922 provided on the base film 921 of the flexible circuit substrate 920 are provided. However, there is disclosed a flexible display device electrically connected through conductive particles 931 of ACF930.
- the conductive particles 931 cannot be crushed into an appropriate flat shape, so that the contact area between the conductive particles 931 and the terminal portion 912 is small and conduction is unstable. Moreover, since the thickness of the terminal part 912 becomes thin in the recessed part, this also makes conduction unstable. If the indentation by the conductive particles 931 is strong, not only the dent is formed but also the terminal portion 912 may be cracked. In this case, the contact between the conductive particles 931 and the terminal portion 912 may occur. It becomes more unstable and poor conduction may occur. In particular, when the flexible display device is used while being bent, poor conduction tends to occur.
- the present invention has been made in view of the above problems, and provides a flexible display device in which a terminal portion of a device substrate and a terminal portion of a flexible circuit board are electrically connected with high reliability via an ACF. With the goal.
- a flexible display device includes a flexible substrate, a device substrate including a display portion and a first terminal portion formed on the flexible substrate, and a flexible substrate including a second terminal portion.
- the first terminal portion and the second terminal portion are connected via an anisotropic conductive film containing conductive particles, and the flexible substrate
- An electrode layer and a buffer layer are provided between the first terminal portion and a product of an average particle diameter and an elastic modulus of the core portion of the conductive particles (hereinafter referred to as “product of the core portion”).
- product of the metal layer is the average of the first terminal portions.
- product of thickness and elastic modulus hereinafter referred to as “product of first terminal portion”
- product of the buffer layer the product of the average thickness and elastic modulus of the electrode layer
- electrode layer the product of the average thickness and elastic modulus of the electrode layer
- the “average particle diameter” means a particle diameter at an integrated value of 50% in the particle size distribution obtained by the laser diffraction / scattering method.
- the electrode layer and the buffer layer are provided between the flexible substrate and the first terminal portion, and the sum of the product of the core portion and the product of the metal layer is calculated. Since the value divided by the sum of the product of the first terminal portion, the product of the buffer layer, and the product of the electrode layer is 1.5 or less, the upper and lower sides with the interface between the conductive particles and the first terminal portion as the boundary The strain balance on both sides can be kept good, and the first terminal portion is hardly deformed. Therefore, the conductive particles can be crushed into an appropriate flat shape, and since the electrical connection between the conductive particles and the first electrode is stabilized, poor conduction is unlikely to occur.
- FIG. 11 is a perspective view illustrating a connection structure between a display panel and a flexible circuit board according to one embodiment of the present invention. It is sectional drawing of the location along the AA of FIG. 2 of the flexible display apparatus based on an Example.
- FIG. 3 is a cross-sectional view of a portion along the line BB in FIG. 2 of the flexible display device according to the example. It is a conceptual diagram for demonstrating the connection structure of the display panel which concerns on an Example, and a flexible circuit board. It is a figure for demonstrating the conditions of the experiment regarding a deformation
- a flexible display device includes a flexible substrate, a device substrate including a display portion and a first terminal portion formed on the flexible substrate, and a flexible substrate including a second terminal portion.
- the first terminal portion and the second terminal portion are connected via an anisotropic conductive film containing conductive particles, and the flexible substrate
- An electrode layer and a buffer layer are provided between the first terminal portion, a product of an average particle diameter and an elastic modulus of the core portion of the conductive particles, and a metal layer covering the core portion.
- the sum of the product of twice the average thickness and the elastic modulus is the product of the average thickness and elastic modulus of the first terminal portion, the product of the average thickness and elastic modulus of the buffer layer, and the electrode layer.
- the value divided by the sum of the product of the average thickness and the elastic modulus is 1.5 or less Characterized in that it comprises.
- the buffer layer is made of a resin.
- a display unit formation region in which the display unit is formed and the first terminal unit are provided between the flexible substrate and the display unit.
- a base layer is continuously provided in the terminal part forming region formed and an intermediate region between the display part forming region and the terminal part forming region, and the terminal part forming region in the base layer is provided.
- the portion is the buffer layer.
- FIG. 1 is a diagram illustrating an overall configuration of a flexible display device according to an aspect of the present invention.
- the flexible display device 1 according to one embodiment of the present invention is a flexible display including a display panel 100, a drive control unit 200, and a plurality of flexible circuit boards 300.
- the display panel 100 is, for example, an organic EL (Electro Luminescence) panel using an electroluminescence effect.
- the drive control unit 200 includes four drive circuits 210 and a control circuit 220.
- An IC as a drive circuit 210 is mounted on the flexible circuit board 300.
- FIG. 2 is a perspective view illustrating a connection structure between a display panel and a flexible circuit board according to one embodiment of the present invention.
- FIG. 3 is a cross-sectional view of a portion along the line AA of FIG. 2 of the flexible display device according to the example.
- FIG. 4 is a cross-sectional view of a portion along the line BB of FIG. 2 of the flexible display device according to the example.
- a display unit 101 is formed in the central region (a portion surrounded by a two-dot chain line in FIG. 2).
- a plurality of first terminal portions 114 are formed on all four sides of the outer peripheral area, as shown in FIGS.
- a region where the display unit 101 is formed is referred to as a display unit forming region
- a region where the first terminal unit 114 is formed is referred to as a terminal unit forming region
- a region therebetween is referred to as an intermediate region. .
- the flexible circuit board 300 is, for example, formed by forming a conductive pattern (not shown) on a base film 310 made of polyimide using copper or the like, and a lower surface (TFT substrate) of the end of the base film 310 on the display panel 100 side.
- a plurality of second terminal portions 320 electrically connected to the conductive pattern are formed at positions corresponding to the first terminal portions 114.
- the ACF 400 is a film obtained by molding a thermosetting resin into a film, and is interposed between the first terminal portion 114 and the second terminal portion 320, and the first terminal portion 114 and the second terminal portion are formed by thermocompression bonding.
- the second terminal portion 320 is bonded.
- the ACF 400 includes conductive particles 410, and the first terminal portions 114 of the display panel 100 and the corresponding second terminal portions 320 of the flexible circuit board 300 are connected via the conductive particles 410 of the ACF 400. Are electrically connected.
- the conductive particles 410 are obtained by coating the surface of a core portion 411 made of a resin material such as PP (polypropylene) with a metal layer 412 made of a metal such as Ni (nickel) or Au (gold).
- the first terminal portion 114 is not necessarily formed on all four sides of the outer peripheral region of the TFT substrate 111, and may be formed on only one side, or formed on two sides or three sides. May be. And the drive circuit 210 and the flexible circuit board 300 should just be adhere
- the display panel 100 includes, for example, a device substrate 110 and a CF (Color Filter) substrate 120.
- the device substrate 110 and the CF substrate 120 are arranged opposite to each other and bonded together.
- a CF substrate 120 is disposed above the device substrate 110 via a sealing member 102, and a resin layer 103 is filled between the EL substrate 110 and the CF substrate 120.
- the sealing member 102 and the resin layer 103 are made of a dense resin material (for example, silicone resin, acrylic resin, etc.), seal the display portion 101 of the device substrate 110, and allow the organic light emitting layer 116 to contact moisture, gas, or the like. Is preventing.
- the surface on the CF substrate 120 side is also referred to as the “upper surface” for each layer constituting the device substrate 110).
- a display portion 101 composed of a plurality of pixels is formed, and R (red), G (green), or B (blue) light emitted from each of the pixels is transmitted through the CF substrate 120 to display the display panel.
- a color image is displayed in front of 100.
- a first terminal portion 114 is provided in a region surrounding the display portion 101 on the upper surface of the TFT substrate 111.
- the example in which the CF substrate 120 is installed has been described, but the CF substrate is not necessarily installed.
- the device substrate 110 includes a TFT substrate 111 and an EL (Electro Luminescence) substrate 124.
- the EL substrate 124 is formed on the upper surface of the TFT substrate 111 by a planarization film 112, a lower electrode 113, a contact hole 113X, an anode ring 113Y,
- the display portion of the device substrate 110 has a stacked structure in which the first terminal portion 114, the bank 115, the organic light emitting layer 116, the electron transport layer 117, the upper electrode 118, the sealing layer 119a, the protective film 119b, and the like are stacked.
- Each pixel constituting 101 is constituted by a top emission type organic EL element constituted by a lower electrode 113, an organic light emitting layer 116, an electron transport layer 117, an upper electrode 118 and the like.
- the TFT substrate 111 has, for example, a structure in which a TFT layer 111b is formed on the upper surface of the flexible substrate 111a.
- the TFT layer 111b includes an SD wiring 111c, a passivation film 111d, and the like.
- the flexible substrate 111a includes, for example, polyimide, aromatic polyimide, polyetherimide, polyester sulfone, polyethylene, ultrahigh molecular weight polyethylene, polyvinyl alcohol, polycarbonate, polystyrene, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyphenylene sulfide, polypropylene, It consists of resin materials such as polyamide, aramid, polyamideimide, acrylonitrile butadiene styrene, cyclic olefin copolymer and polyvinyl chloride.
- the foundation layer 104 is composed of the passivation film 111d and the planarizing film 112. A portion of the base layer 104 corresponding to the first terminal portion 114 functions as the buffer layer 104a.
- the buffer layer may be formed as a layer continuous with the plurality of first terminal portions.
- the buffer layer has a first terminal corresponding to each of the plurality of first terminal portions in which only each buffer layer 104a in FIG. 4 is formed as a buffer layer having the characteristics of the present invention.
- Each part may be formed as an independent layer.
- the SD wiring 111c is made of a conductive material such as Ag, Cu, Ti, Mo, Al, W, or an alloy thereof, and is electrically connected to the lead wiring (not shown) of the TFT substrate 111.
- the SD wiring 111c and the first terminal portion 114 are electrically connected via a via connection portion 114X that penetrates the passivation film 111d and the planarization film 112.
- the portion of the terminal portion formation region in the SD wiring 111 c constitutes the electrode layer 105.
- the electrode layer 105 exists between the flexible substrate 111a and the first terminal portion 114, and exists on the upper surface of the flexible substrate 111a. Note that the electrode layer 105 may be provided not only in the terminal portion formation region on the upper surface of the flexible substrate 111a but also in other regions.
- the electrode layer is preferably thinner than the first terminal portion.
- the passivation film 111d is made of, for example, a water-soluble resin such as polyvinyl alcohol (PVA), a fluorine-based resin, SiO (silicon oxide), SiN (silicon nitride), or the like, and covers and protects the SD wiring 111c. .
- a water-soluble resin such as polyvinyl alcohol (PVA), a fluorine-based resin, SiO (silicon oxide), SiN (silicon nitride), or the like, and covers and protects the SD wiring 111c.
- the planarizing film 112 is made of, for example, an insulating material such as polyimide resin or acrylic resin, and planarizes the step on the upper surface of the passivation film 111d. Note that the planarization film 112 is not always necessary.
- the lower electrode (pixel electrode) 113 is electrically connected to the TFT layer 111b through the contact hole 113X.
- the lower electrode 113 may have a two-layer structure of a metal layer and a metal oxide layer, for example.
- the metal layer is, for example, Ag (silver), APC (silver, palladium, copper alloy), ARA (silver, rubidium, gold alloy), MoCr (molybdenum and chromium alloy), NiCr (nickel and chromium alloy). It is made of a light-reflective conductive material such as, and is formed in a matrix in a region corresponding to each pixel.
- the metal oxide layer is made of a conductive material such as ITO (indium tin oxide) or IZO (indium zinc oxide), and is formed on the metal layer so as to cover the metal layer.
- the first terminal portion 114 is electrically connected to the lead wiring (not shown) of the TFT substrate 111.
- the first terminal portion 114 may have a two-layer structure of a metal layer and a metal oxide layer.
- the metal layer is made of, for example, a conductive material such as Ag, Cu, Ti, Mo, Al, APC, ARA, MoCr, NiCr, and along the outer peripheral edge of the TFT substrate 111 along all four sides of the outer peripheral region of the TFT substrate 111. Are formed at intervals.
- the metal oxide layer is made of, for example, ITO, IZO or the like, and is formed on each metal layer so as to cover each metal layer.
- the first terminal portion can be formed using the same material and the same process as the lower electrode (pixel electrode) in the display portion. In this case, it is not necessary to provide a separate process for forming the first terminal portion, and the manufacturing process can be simplified.
- the bank 115 is made of, for example, an insulating organic material such as acrylic resin, polyimide resin, or novolac type phenol resin, and is formed so as to avoid a region where the lower electrode 113 is formed in the central region of the TFT substrate 111. Has been.
- the bank 115 may be a pixel bank having a cross structure or a line bank having a stripe structure.
- the organic light emitting layer 116 is formed in a region corresponding to each pixel defined by the bank 115, and emits light to R, G, or B by recombination of holes and electrons when the display panel 100 is driven.
- the organic light emitting layer 116 is composed of an organic material. Examples of the organic material include an oxinoid compound, a perylene compound, a coumarin compound, an azacoumarin compound, an oxazole compound, an oxadiazole compound described in JP-A-5-163488.
- organic material constituting the organic light emitting layer 116 polyphenylene vinylene and derivatives thereof, polyacetylene and derivatives thereof, polyphenylene (PP) and derivatives thereof, polyparaphenyleneethylene and derivatives thereof, Polymeric materials such as poly-3-hexylthiophene (P3HT) and derivatives thereof, and polyfluorene (PF) and derivatives thereof can also be used.
- P3HT poly-3-hexylthiophene
- PF polyfluorene
- the electron transport layer 117 is made of, for example, barium, phthalocyanine, lithium fluoride, or a mixture thereof, and has a function of transporting electrons injected from the upper electrode 118 to the organic light emitting layer 116.
- the upper electrode 118 is a transparent electrode formed of a light-transmitting conductive material such as ITO or IZO, for example, and covers almost the entire display unit 101 so as to cover the upper surfaces of the bank 115 and the organic light emitting layer 116. Is formed.
- the sealing layer 119a is, for example, a layer for covering and sealing the display unit 101, and is formed on the upper electrode 118, for example, made of a light-transmitting resin material such as silicone resin or acrylic resin. Has been.
- the protective film 119b covers and seals the display portion 101, and prevents the organic light emitting layer 116 from being exposed to moisture, gas, or the like.
- the protective film 119b includes SiN, SiO, SiON (silicon oxynitride), SiC ( It is made of a light transmissive material such as silicon carbide), SiOC (carbon-containing silicon oxide), Al 2 O 3 (aluminum oxide), or AlN (aluminum nitride), and is formed on the sealing layer 119a.
- one or more other layers such as a hole transport layer and a hole injection layer are further formed between the lower electrode 113 and the organic light emitting layer 116. May be.
- One or more other layers such as an electron injection layer may be further formed between the organic light emitting layer 116 and the upper electrode 118.
- the CF substrate 120 has a structure in which an R, G, or B color filter 122 and a black matrix layer 123 are formed on the lower surface (the main surface on the device substrate 110 side) of the flexible substrate 121.
- the color filter 122 is a transparent layer that transmits visible light having a wavelength corresponding to R, G, or B, and is made of a known resin material or the like, and is formed in a region corresponding to each pixel.
- the black matrix layer 123 prevents external light from entering the panel, prevents internal components from being seen through the CF substrate 120, and suppresses reflection of external light to improve the contrast of the display panel 100.
- the black resin layer is formed of an ultraviolet curable resin material containing a black pigment having excellent light absorption and light shielding properties.
- the base layer 104 is provided on the entire top surface of the flexible substrate 111a. That is, it is continuously provided in the display portion forming region, the terminal portion forming region, and the intermediate region.
- the base layer 104 is not necessarily provided in the terminal portion formation region.
- the base layer 104 is provided over the entire upper surface of the flexible substrate 111a, that is, the terminal portion formation region.
- the portion of the terminal portion formation region in the base layer 104 is used as a buffer layer 104a for suppressing deformation of the first terminal portion 114. In this manner, when a part of the base layer 104 is used as the buffer layer 104a, it is not necessary to separately perform the step of providing the buffer layer 104a, and the display panel 100 can be manufactured more easily.
- the configuration of the buffer layer 104a will be described in detail.
- the SD wiring layer 111c includes a terminal portion forming region portion, a passivation film 111d portion of a terminal portion forming region portion, and a planarizing film 112 of a terminal portion forming region portion.
- the average thickness of the buffer layer 104a is, for example, 3.75 ⁇ m.
- the elastic modulus of the buffer layer 104a is, for example, about 1.5 GPa, and the elastic modulus of each of the passivation film 111d and the planarizing film 112 constituting the buffer layer 104a is, for example, about 1.5 GPa.
- the average thickness of each layer is not limited to the above, and the elastic modulus of each layer is not limited to the above.
- the buffer layer 104a is provided on the lower side of the first terminal portion 114 in the device substrate 110 according to the embodiment, the first terminal portion 114 is not easily deformed by the pressure when the ACF 400 is crimped. The reason will be described below.
- the flexible substrate 111a has an average thickness of, for example, 38 ⁇ m, an elastic modulus of 3 GPa to 7 GPa (made of polyimide), and has flexibility.
- the first terminal portion 114 is a very thin layer having an average thickness of, for example, 0.2 ⁇ m. As described above, when the flexible substrate 111a is flexible and the first terminal portion 114 is a very thin layer, in the conventional device substrate in which the buffer layer 104a is not provided, when the ACF is crimped The first terminal portion is greatly deformed by the pressure of.
- the buffer layer 104 a is provided below the first terminal portion 114.
- the repulsive force of the buffer layer 104a affects the first terminal portion 114, and the force with which the first terminal portion 114 pushes back the conductive particles 410 becomes stronger. It becomes easy to be crushed.
- the product of the average particle diameter and the elastic modulus of the core part 411 of the conductive particles 410 (hereinafter referred to as “product of the core part 411”) and the average of the metal layer 412.
- the sum of the product of twice the thickness and the modulus of elasticity (hereinafter referred to as the “product of the metal layer 412”) is the product of the average thickness of the first terminal portion 114 and the modulus of elasticity (hereinafter referred to as “first” Of the buffer layer 104a ”, the product of the average thickness and the elastic modulus of the buffer layer 104a (hereinafter referred to as“ product of the buffer layer 104a ”), and the average thickness and the elastic modulus of the electrode layer 105.
- the value divided by the sum of the product (hereinafter referred to as “product of electrode layer”) is 1.5 or less. By adjusting the value to 1.5 or less, it is possible to balance the strain on both the upper and lower sides with the interface between the conductive particle 410 and the first terminal portion 114 as a boundary.
- the strain of the core portion 411 is the product of the core portion 411
- the strain of the metal layer 412 is the product of the metal layer 412
- the strain of the first terminal portion 114 is the product of the first terminal portion 114
- the buffer layer 104a Can be represented by the product of the buffer layer 104a
- the strain of the electrode layer 105 can be represented by the product of the electrode layer 105. The larger the product, the smaller the strain.
- the balance of strain on both the upper and lower sides with the interface between the conductive particle 410 and the first terminal portion 114 as the boundary is the sum of the product of the core portion 411 and the product of the metal layer 412. 114, and the product of the buffer layer 104a and the product of the electrode layer 105 can be adjusted. If this value is 1.5 or less, the first terminal portion 114 is deformed. It was confirmed by the experiment described later that can be effectively suppressed. The value obtained by dividing the sum of the product of the core portion 411 and the product of the metal layer 412 by the sum of the product of the first terminal portion 114, the product of the buffer layer 104a, and the product of the electrode layer 105 is It is good that it is 1.5 ⁇ 10 ⁇ 3 or more.
- the first terminal portion 114 is, for example, an ACL metal having an elastic modulus of about 70 GPa and an average thickness of 0.2 ⁇ m.
- the value obtained by dividing the sum of the product of the core part 411 and the product of the metal layer 412 by the sum of the product of the first terminal part 114, the product of the buffer layer 104a, and the product of the electrode layer 105 is Since it is 1.1 and is 1.5 or less, the balance of strain on both the upper and lower sides with the interface between the conductive particle 410 and the first terminal portion 114 as a boundary is good.
- FIG. 5 is a conceptual diagram for explaining a connection structure between the display panel and the flexible circuit board according to the embodiment.
- the ACF 400 is interposed between the first terminal portion 114 provided on the buffer layer 104 a of the device substrate 110 and the terminal portion 320 provided on the base film 310 of the flexible circuit board 300.
- the ACF 400 is pressure-bonded to the device substrate 110 and the flexible circuit board 300, and the conductive particles 410 included in the ACF 400 are connected to the both terminal portions 114. , 320, the terminal portions 114, 320 are electrically connected via the conductive particles 410.
- the conductive particles 410 can be appropriately deformed into a flat shape. Therefore, a large contact area between the first terminal portion 114 and the conductive particles 410 can be ensured, and poor conduction due to poor contact is unlikely to occur.
- FIG. 6A is a schematic diagram for explaining the structure of the sample
- FIG. 6B constitutes the sample. It is a table
- the ACF one containing conductive particles in which a PP core part having an average particle diameter of 4 ⁇ m was coated with a Ni metal layer having an average thickness of 0.1 ⁇ m was used.
- the ACF was bonded using a thermocompression bonding apparatus at a set temperature of 250 ° C., a set time of 15 sec, and a set pressure of 0.12 MPa.
- a substrate made of PI (polyimide) having an average thickness of 38 ⁇ m and an SiON layer having an average thickness of 1 ⁇ m was used as the flexible substrate.
- an Mo (molybdenum) layer having an average thickness of 25 nm is applied to the flexible substrate
- a Mo layer having an average thickness of 75 nm is applied to the sample 2
- a W (tungsten) layer having an average thickness of 25 nm is applied to the sample 3.
- a W layer having an average thickness of 75 nm was provided in place of the first terminal portion.
- Samples 5 and 6 have a structure as shown in FIG. 6A.
- Mo layer having an average thickness of 25 nm is used instead of the electrode layer on the flexible substrate as a buffer layer.
- a PL (resin) layer having an average thickness of 4 ⁇ m was provided as a Mo layer having an average thickness of 75 nm instead of the first terminal portion.
- a W layer with an average thickness of 25 nm is used instead of the electrode layer on the flexible substrate
- a PL layer with an average thickness of 4 ⁇ m is used instead of the buffer layer
- a W layer with an average thickness of 75 nm is used instead of the first terminal portion.
- Samples 1 to 4 each have a conventional configuration in which no buffer layer is provided, but Samples 5 and 6 each have a configuration according to the present invention in which a buffer layer is provided, and Modification 2 in which an electrode layer is provided. It is a sandwich structure similar to
- the elastic modulus of Mo is about 290 GPa
- the elastic modulus of W is about 400 GPa
- the elastic modulus of PL is about 1.5 GPa
- the elastic modulus of PP is about 1.5 GPa
- the elasticity of Ni The rate is about 200 GPa.
- FIG. 7 is an electron micrograph showing the results of an experiment relating to the deformation suppression effect. As shown in FIGS. 7A to 7D, the surface of Samples 1 to 4 was noticeably uneven with a certain degree of possibility of conduction failure. From this, when only the 1st terminal part which is a metal film was provided and the buffer layer was not provided, it has confirmed that the 1st terminal part deform
- FIG. 8 is an electron micrograph showing the results of an experiment relating to the deformation suppression effect. As shown in FIG. 8A, in the sample 4, remarkable unevenness was generated on the lower surface of the first terminal portion. On the other hand, as shown in FIG. 8B, in Sample 6, almost no irregularities were found on the lower surface of the electrode layer. From this, it was confirmed that the deformation of the first terminal portion can be suppressed by providing the electrode layer and the buffer layer.
- the flexible display device according to the present invention can be suitably used for, for example, home or public facilities, various display devices for business use, television devices, displays for portable electronic devices, and the like.
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Abstract
Description
本発明の一態様に係るフレキシブル表示装置は、フレキシブル基板と、当該フレキシブル基板上に形成された表示部及び第1の端子部と、を備えたデバイス基板と、第2の端子部を備えたフレキシブル回路基板と、を具備したフレキシブル表示装置において、前記第1の端子部と前記第2の端子部とは、導電性粒子を含む異方性導電膜を介して接続されており、前記フレキシブル基板と前記第1の端子部との間に、電極層及び緩衝層が設けられており、前記導電性粒子のコア部の平均粒径と弾性率との積と、前記コア部を被覆する金属層の平均厚みの2倍と弾性率との積との和を、前記第1の端子部の平均厚みと弾性率との積と、前記緩衝層の平均厚みと弾性率との積と、前記電極層の平均厚みと弾性率との積との和で除した値が1.5以下となることを特徴とする。
以下、本発明の一態様に係るフレキシブル表示装置について、図面を参照しながら説明する。なお、各図面における部材の縮尺は実際のものとは同じとは限らない。
表示パネル100は、例えば、デバイス基板110と、CF(Color Filter)基板120とを備える。デバイス基板110およびCF基板120は対向配置され貼り合わされている。
デバイス基板110は、TFT基板111と、EL(Electro Luminescence)基板124とからなり、EL基板124は、TFT基板111の上面に、平坦化膜112、下部電極113、コンタクトホール113X、アノードリング113Y、第1の端子部114、バンク115、有機発光層116、電子輸送層117、上部電極118、封止層119a、および保護膜119b等が積層された積層構造を有し、デバイス基板110の表示部101を構成する各画素は、下部電極113、有機発光層116、電子輸送層117、上部電極118等で構成されるトップエミッション型の有機EL素子で構成されている。
CF基板120は、フレキシブル基板121の下面(デバイス基板110側の主面)側に、R、GまたはBのカラーフィルタ122と、ブラックマトリクス層123とが形成された構造である。カラーフィルタ122は、R、GまたはBに対応する波長の可視光を透過する透明層であって、公知の樹脂材料等からなり、各画素に対応した領域に形成されている。ブラックマトリクス層123は、パネル内部への外光の入射を防止したり、CF基板120越しに内部部品が透けて見えるのを防止したり、外光の照り返しを抑えて表示パネル100のコントラストを向上させたりする目的で形成されている黒色樹脂層であって、例えば光吸収性および遮光性に優れる黒色顔料を含む紫外線硬化樹脂材料からなる。
(緩衝層の構成)
図3および図4に示す本実施の形態に係るデバイス基板110では、下地層104がフレキシブル基板111aの上面全体に設けられている。すなわち、表示部形成領域、端子部形成領域および中間領域に連続して設けられている。下地層104は、端子部形成領域には必ずしも設ける必要はないが、実施例に係るデバイス基板110では、下地層104をフレキシブル基板111aの上面全体に亘って設けることで、すなわち、端子部形成領域まで拡張させて設けることで、下地層104における端子部形成領域の部分を、第1の端子部114の変形を抑制するための緩衝層104aとして利用している。このように、下地層104の一部を緩衝層104aとして利用する構成とすれば、緩衝層104aを設ける工程を別途行う必要がなくなり、表示パネル100をより簡単に製造することができる。
緩衝層104aの平均厚みは、例えば、3.75μmである。緩衝層104aの弾性率は、例えば、約1.5GPaであって、緩衝層104aを構成するパッシベーション膜111d、平坦化膜112のそれぞれの弾性率も、例えば、約1.5GPaである。各層の平均厚みは、上記に限定されず、各層の弾性率も、上記に限定されない。
実施例に係るデバイス基板110には、第1の端子部114の下側に緩衝層104aが設けられているため、ACF400を圧着する際の圧力で第1の端子部114が変形し難い。その理由を以下に説明する。
また、緩衝層104aの断面積(厚み×幅)を「A」、力を「F」とした場合に、下記の(式2)の関係が成り立つ。
ここで、力「F」は一定であり、弾性率「E」は材料固有の値であり、緩衝層104aの幅も一定とすると、(式1)および(式2)から、歪み「ε」を表す下記の(式3)が導き出せる。
つまり、コア部411の歪みはコア部411の積によって、金属層412の歪みは金属層412の積によって、第1の端子部114の歪みは第1の端子部114の積によって、緩衝層104aの歪みは緩衝層104aの積によって、電極層105の歪みは電極層105の積によって、それぞれ表すことが可能であり、それら積が大きくなるほど歪が小さくなる。
以上、本発明の一態様に係るフレキシブル表示装置の実施例を具体的に説明してきたが、上記態様は、本発明の構成および作用・効果を分かり易く説明するために用いた例であって、本発明の内容は、上記態様に限定されない。
実験により、緩衝層が圧着による端子部の変形に及ぼす影響について調べた。図6は、変形抑制効果に関する実験の条件を説明するための図であって、図6(a)は、サンプルの構造を説明するための概略図、図6(b)は、サンプルを構成する材料を説明するための表である。
101 表示部
104 下地層
104a,505 緩衝層
110 デバイス基板
111a フレキシブル基板
114 第1の端子部
300 フレキシブル回路基板
320 第2の端子部
400 異方性導電膜
410 導電性粒子
411 コア部
412 金属層
605 電極層
Claims (9)
- フレキシブル基板と、当該フレキシブル基板上に形成された表示部及び第1の端子部と、を備えたデバイス基板と、
第2の端子部を備えたフレキシブル回路基板と、
を具備したフレキシブル表示装置において、
前記第1の端子部と前記第2の端子部とは、導電性粒子を含む異方性導電膜を介して接続されており、
前記フレキシブル基板と前記第1の端子部との間に、電極層及び緩衝層が設けられており、
前記導電性粒子のコア部の平均粒径と弾性率との積と、前記コア部を被覆する金属層の平均厚みの2倍と弾性率との積との和を、前記第1の端子部の平均厚みと弾性率との積と、前記緩衝層の平均厚みと弾性率との積と、前記電極層の平均厚みと弾性率との積との和で除した値が1.5以下となることを特徴とする、
フレキシブル表示装置。 - 前記緩衝層は、樹脂からなる、
請求項1に記載されたフレキシブル表示装置。 - 前記緩衝層は、複数の前記第1の端子部に連続した層として形成されている、
請求項1に記載されたフレキシブル表示装置。 - 前記緩衝層は、複数の前記第1の端子部の各々に対応して、前記第1の端子部ごとに独立した層として形成されている、
請求項1に記載されたフレキシブル表示装置。 - 前記電極層の厚みが、前記第1の端子部の厚みよりも薄い、
請求項1に記載されたフレキシブル表示装置。 - 前記第1の端子部は、前記表示部における画素電極と同一プロセスによって形成されている、
請求項1に記載されたフレキシブル表示装置。 - 前記電極層と、前記第1の端子部とは、ビア接続部を介して電気的に接続されている、
請求項1に記載されたフレキシブル表示装置。 - 前記フレキシブル基板と前記表示部との間には、前記表示部が形成されている表示部形成領域と、前記第1の端子部が形成されている端子部形成領域と、前記表示部形成領域および前記端子部形成領域の間の中間領域とに連続して、下地層が設けられており、
前記下地層における前記端子部形成領域の部分が前記緩衝層である、
請求項1に記載されたフレキシブル表示装置。 - 前記下地層は、隔壁、パッシベーション膜及び平坦化膜のうちの少なくとも1つで構成されている、
請求項8に記載されたフレキシブル表示装置。
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