WO2013031430A1 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- WO2013031430A1 WO2013031430A1 PCT/JP2012/068616 JP2012068616W WO2013031430A1 WO 2013031430 A1 WO2013031430 A1 WO 2013031430A1 JP 2012068616 W JP2012068616 W JP 2012068616W WO 2013031430 A1 WO2013031430 A1 WO 2013031430A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- heat treatment
- induction heating
- gas
- processing
- Prior art date
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 151
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 230000006698 induction Effects 0.000 claims abstract description 104
- 239000007789 gas Substances 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Definitions
- the present invention relates to a heat treatment apparatus for performing heat treatment on a substrate using induction heating.
- a heat treatment such as a film forming process or an oxidation process is performed on a substrate such as a semiconductor wafer
- a plurality of substrates are arranged in a quartz processing container, and the substrate is heated by a resistance heating type heater or a heating lamp.
- a batch-type heat treatment apparatus for heating is widely used.
- a technique capable of heating to a high temperature exceeding 1000 ° C. a technique is known in which a high-frequency induction heating coil is arranged outside the container and a plurality of substrates held by a susceptor provided inside the container are induction heated. (For example, see FIG. 4 of Patent Document 1).
- an object of the present invention is to provide a heat treatment apparatus using induction heating that can uniformly perform heat treatment while eliminating the influence of an induced current on a substrate.
- the present invention is a heat treatment apparatus that performs heat treatment on a plurality of substrates, a processing container that houses the plurality of substrates to be heat-treated, a substrate holding member that holds the plurality of substrates in the processing container, and the processing An induction heating coil for forming an induction magnetic field in the container for induction heating; a high-frequency power source for applying high-frequency power to the induction heating coil; a gas supply mechanism for supplying a processing gas into the processing container; and the processing An exhaust mechanism that exhausts the inside of the container, and is provided between the induction heating coil and the substrate holding member so as to surround the substrate holding member in the processing container, and is heated by an induction current formed by the induction magnetic field.
- An induction heating element that heats the substrate held by the substrate holding member with the radiant heat, and the induction heating element prevents an induced current from flowing through the substrate. Subjected to.
- At least one of the thickness of the induction heating element, the frequency of the high-frequency power, and the distance between the induction heating coil and the substrate so that the induction heating element prevents the induction current from flowing to the substrate is adjusted.
- the processing container is made of a dielectric, and the induction heating coil can be wound around the outer periphery of the processing container.
- the substrate holding member may be a polygonal column extending in the vertical direction of the processing container, and the substrate may be held on the side surface.
- the induction heating element is preferably made of graphite.
- the gas supply mechanism may have a shower head for introducing a processing gas into the processing container in a shower shape.
- a film forming process for forming a predetermined film by reacting a processing gas on the substrate is exemplified, and the film forming process includes a silicon carbide (SiC) film or a gallium nitride (GaN) film. Examples include film formation.
- the heat treatment is a film forming process for forming a compound film using a plurality of processing gases, and further includes a rotation mechanism for rotating the substrate holding member, and the gas supply mechanism includes the process steps described above. Gas is supplied to different regions of the processing container, and the substrate holding member is rotated by the rotation mechanism so that the substrate sequentially passes through the regions, and the plurality of processing gases are sequentially adsorbed on the substrate. can do.
- the gas supply mechanism has a plurality of shower heads for introducing the processing gases into different regions of the processing container in a shower shape.
- the compound film is a SiC film, and a gas using Si source gas, C source gas, and reducing gas can be cited as the plurality of processing gases.
- FIG. 2 is a cross-sectional view of the heat treatment apparatus of FIG. 1 in which three zones are provided in the height direction of the processing vessel, each of which is provided with a separate heating coil, and the high frequency power of each zone is controlled.
- FIG. 1 is a sectional view showing a heat treatment apparatus according to the first embodiment of the present invention.
- the heat treatment apparatus 1 has a vertical processing container 2 having a cylindrical shape extending in the vertical direction.
- the processing container 2 has a top wall 2a that closes its upper end, and its lower end is open.
- the processing container 2 is made of a dielectric material having heat resistance and transmitting electromagnetic waves (high frequency power), for example, quartz.
- the susceptor 3 as a substrate holding member that holds a plurality of substrates S can be inserted into the processing container 2 from below.
- the susceptor 3 is a barrel type having a polygonal column extending in the vertical direction of the processing container 2 and is made of, for example, graphite. A plurality of substrates S are held on the side surface of the susceptor 3. Examples of the shape of the susceptor 3 include a hexagonal prism as shown in FIG. 2 and a triangular prism as shown in FIG. Of course, other polygonal columns may be used.
- the susceptor 3 is rotated in the direction of the arrow by a rotation mechanism 4 provided below the susceptor 3.
- the rotation mechanism 4 is supported by a lid body 5, and the lid body 5, the rotation mechanism 4, and the susceptor 3 are integrally lifted and lowered by a lifting mechanism (not shown).
- a lifting mechanism not shown
- the susceptor 3 is loaded and unloaded.
- the lid 5 closes the lower end opening of the processing container 2, and the lid 5 and the bottom of the processing container 2 are sealed by a seal ring (not shown).
- the lid 5 is made of a heat resistant material such as quartz.
- a cylindrical heat insulating material 6 made of, for example, high-purity carbon is disposed inside the processing container 2 along the inner wall of the processing container 2.
- a cylindrical induction heating element 7 is provided inside the heat insulating material 6 so as to surround the loaded susceptor 3. As will be described later, the induction heating element 7 generates heat when an induced current flows, and is made of a highly emissive conductive material, for example, graphite.
- a gas inlet 8 for introducing a processing gas is formed in the top wall 2a of the processing vessel 2.
- a gas supply pipe 9 is connected to the gas inlet 8, and a gas supply section is connected to the gas supply pipe 9. 10 is connected. Then, one or a plurality of process gases are supplied from the gas supply unit 10 through the gas supply pipe 9 and the gas introduction port 8 while controlling the flow rate by a flow rate controller (not shown). It has become.
- An exhaust port 11 is formed at the bottom of the processing vessel 2, and an exhaust pipe 12 is connected to the exhaust port 11.
- the exhaust pipe 12 is provided with an automatic pressure control valve (APC) 13 and an exhaust device 14 including a vacuum pump. By exhausting the exhaust device 14 while adjusting the opening degree of the automatic pressure control valve 13, processing is performed.
- the inside of the container 2 can be controlled to a predetermined degree of vacuum.
- An induction heating coil 15 is provided outside the processing container 2.
- the induction heating coil 15 has a metal pipe spirally wound around the outer periphery of the processing container 2 along the vertical direction, and the winding area in the vertical direction is wider than the placement area of the substrate S. Yes. Copper can be suitably used as the metal pipe constituting the induction heating coil 15.
- the induction heating coil 15 is supplied with high-frequency power from a high-frequency power supply 16 via a power supply line 18.
- a matching circuit 17 for impedance matching is provided in the middle of the power supply line 18.
- the high frequency of the high frequency power supply 16 is set within a range of 17 kHz or more, for example.
- the induction heating element 7 Since induction current is consumed by induction heating of the induction heating element 7, the amount of induction current that passes through the induction heating element 7 and reaches the substrate S decreases, and the induction heating element 7 induces an induction current in the substrate S. Is prevented from flowing. Since the magnitude of the induced current that passes through the induction heating element 7 varies depending on the thickness of the induction heating element 7, the frequency of the high frequency power, and the distance between the induction heating coil 15 and the substrate S, in this embodiment, the substrate S At least one of these is adjusted so as to prevent the induced current from flowing into the. For example, when the frequency of the high frequency power and the distance between the induction heating coil 15 and the substrate S are fixed, only the thickness of the induction heating element 7 is adjusted.
- the frequency of the high frequency power and the thickness of the induction heating element 7 are adjusted.
- the thickness of the induction heating element and the distance between the induction heating coil 15 and the substrate S are fixed, only the frequency of the high frequency power is adjusted.
- the induced current flowing in the substrate S is allowed to be a slight value that does not affect the uniformity of processing.
- the control unit 20 includes a controller including a microprocessor, a keyboard for an operator to input commands for managing the heat treatment apparatus 1, a user interface including a display for visualizing and displaying the operation status of the heat treatment apparatus 1, and the like. And a storage unit storing a control program for realizing various processes executed by the heat treatment apparatus 1 under the control of the controller and a process recipe for causing the heat treatment apparatus 1 to execute a predetermined process according to the processing conditions And have.
- the processing recipe and the like are stored in a storage medium, and are read from the storage medium and executed in the storage unit.
- the storage medium may be a hard disk or a semiconductor memory, or may be a portable medium such as a CD-ROM, DVD, or flash memory. Recipes and the like are read from the storage unit according to instructions from the user interface as necessary, and are executed by the controller, so that desired processing in the heat treatment apparatus 1 is performed under the control of the controller.
- the substrate S on the susceptor is heated by turning on the high frequency power supply 16 and applying high frequency power to the induction heating coil 15.
- an induction magnetic field is formed in the processing container 2 by applying high-frequency power to the induction heating coil 15, an induced current flows through the induction heating element 7 by the induction magnetic field, and the induction heating element 7 generates heat.
- the substrate S on the susceptor 3 is heated by the radiant heat of the induction heating element 7.
- the processing gas necessary for the heat treatment is supplied from the gas supply unit 10 into the processing container 2 while controlling the flow rate, and the automatic pressure control valve (APC) 13 is controlled.
- the exhaust device 14 exhausts air from the exhaust port 11 to maintain the inside of the processing container 2 at a predetermined pressure, and the rotating mechanism 4 rotates the susceptor 3.
- the temperature of the substrate S is measured by a thermocouple (not shown) provided in the processing container 2, and the power of the high frequency power is controlled based on the temperature.
- a predetermined heat treatment is performed on the substrate S with a predetermined processing gas while controlling the temperature of the substrate S to a predetermined process temperature.
- Examples of the heat treatment include a film forming process for forming a predetermined film by reacting a processing gas on the substrate, and an oxidizing process for oxidizing the substrate surface.
- a compound film such as a silicon carbide (SiC) film or a gallium nitride (GaN) film is used.
- Film formation can be given as a typical example.
- SiC silicon carbide
- SiN gallium nitride
- single-crystal SiC may be formed by epitaxial growth using Si or SiC as the substrate S, or polycrystalline SiC may be formed by CVD.
- single-crystal GaN may be formed by epitaxial growth using sapphire or GaN as the substrate S, or polycrystalline GaN may be formed by CVD.
- a Si gas such as SiH 4 is used as a processing gas
- a hydrocarbon gas such as C 3 H 8 gas is used as a C source
- a H 2 gas is used as a reducing gas.
- examples of the Ga source include an organic gallium compound such as trimethyl gallium (TMGa), and examples of the N source and the reducing gas include NH 3 .
- TMGa trimethyl gallium
- examples of the N source and the reducing gas include NH 3 .
- the induced current is applied to the susceptor 3 to heat the substrate S with the heat.
- the induced current also flows through the substrate S, It was difficult to perform uniform processing.
- the film thickness, film composition, and the like are not uniform.
- the induction heating element 7 is provided between the induction heating coil 15 and the substrate S, the induced current is applied to the induction heating element 7 to generate heat, and the substrate is generated by the radiant heat of the induction heating element 7 at that time. S is heated.
- the induced current is consumed by the induction heating element 7, and the induction current that passes through the induction heating element 7 and flows to the substrate S can be remarkably reduced. Can be blocked.
- the magnitude of the induction current that is transmitted without being consumed by the induction heating element 7 varies depending on the thickness of the induction heating element 7, the frequency of the high-frequency power, and the distance between the induction heating coil 15 and the substrate S.
- the induced current reaching the substrate S is sufficiently blocked.
- the induced current is permissible as long as it does not affect the uniformity of processing.
- a shower head 30 may be provided instead of the top wall 2a as shown in FIG. 4 from the viewpoint of supplying the processing gas to the substrate S with good uniformity.
- the shower head 30 is provided in the upper part of the main body 31, the gas introduction port 32 to which the gas supply pipe 9 is connected, the gas diffusion space 33 formed horizontally in the main body 31, and the gas diffusion space. And a plurality of gas discharge holes 34 penetrating from 33 to the lower surface of the main body 31. Then, the processing gas is discharged from the plurality of gas discharge holes 34 into the processing container 2 in a shower shape. As a result, the processing gas is uniformly supplied into the processing container 2.
- the induction heating coil may be divided into a plurality of zones, and the high frequency power may be controlled respectively.
- the zone A is divided into three zones A, B, and C, and the induction heating coil 15a is wound around the zone A so that the high frequency power is supplied from the high frequency power source 16a.
- the induction heating coil 15b is wound to supply high-frequency power from the high-frequency power supply 16b
- the induction heating coil 15c is wound to the zone C to supply high-frequency power from the high-frequency power supply 16c.
- the number of zones is not limited to three, and may be two or four or more.
- 17a, 17b, and 17c are the matching circuits of each zone
- 18a, 18b, and 18c are the feeding lines of each zone.
- an induction heating element is provided between the induction heating coil and the susceptor so as to surround the susceptor that is the substrate holding member in the processing container, and is formed by the induction magnetic field in the processing container.
- the induction heating element is heated by the induced current, the substrate held by the susceptor is heated by the radiant heat, and the induction heating element prevents the induction current from flowing to the substrate, thereby eliminating the influence of the induction current on the substrate. Heat treatment can be performed uniformly.
- FIG. 6 is a cross-sectional view showing a heat treatment apparatus according to the second embodiment of the present invention
- FIG. 7 is a schematic diagram showing a concept when a SiC film is formed using the heat treatment apparatus according to the second embodiment of the present invention.
- the top wall of the processing vessel 2 is constituted by a shower head 40 having a split disk shape.
- the shower head 40 is divided into a first shower head 40a, a second shower head 40b, and a third shower head 40c in the circumferential direction (see FIG. 7).
- the first shower head 40a includes a main body 41a, a gas introduction port 42a provided at an upper portion of the main body 41a, a gas diffusion space 43a formed horizontally inside the main body 41a, and a lower surface of the main body 41a from the gas diffusion space 43a.
- the second shower head 40b includes a main body 41b, a gas introduction port 42b provided in an upper portion of the main body 41b, a gas diffusion space 43b formed horizontally inside the main body 41b, and a lower surface of the main body 41b from the gas diffusion space 43b. And a plurality of gas discharge holes 44b penetrating therethrough.
- the third shower head 40c includes a main body 41c, a gas introduction port 42c provided in an upper portion of the main body 41c, a gas diffusion space 43c formed horizontally in the main body 41c, and a lower surface of the main body 41c from the gas diffusion space 43c. And a plurality of gas discharge holes 44c penetrating therethrough.
- Gas supply pipes 9a, 9b, and 9c are connected to the gas inlets 42a, 42b, and 42c.
- the gas supply pipes 9a, 9b, and 9c are respectively connected to the first gas source 10a and the first gas source 10a of the gas supply unit 10.
- the second gas source 10b and the third gas source 10c are connected.
- the first gas source 10a supplies the first shower head 40a with the first gas
- the second gas source 10b supplies the second gas to the second shower head 40b
- the third gas source 10c supplies the second gas.
- the third shower head 40c is supplied with a third gas and discharges the first gas from the first shower head 40a, the second gas from the second shower head 40b, and the third gas from the third shower head 40c. It has come to be.
- the gas supply pipes 9a, 9b, and 9c are provided with valves and flow controllers, and supply and stop of the first gas, the second gas, and the third gas, and these Flow control is possible.
- a plurality of substrates S are mounted on the susceptor 3 with the susceptor 3 lowered, as in the first embodiment, and the substrates S are mounted.
- the lifted susceptor is lifted by the elevating mechanism and loaded into the processing container 2, and the lower end opening of the processing container 2 is closed by the lid 5 so that the processing container 2 is sealed.
- the high frequency power supply 16 is turned on, high frequency power is applied to the induction heating coil 15, an induction magnetic field is formed in the processing container 2, and an induction current is caused to flow through the induction heating element 7 by the induction magnetic field.
- the heating element 7 generates heat, and the substrate S on the susceptor 3 is heated by the radiant heat.
- the first shower head 40a, the second shower head 40b, and the third shower head 40c are supplied to the first shower head 40a, the second shower head 40b, and the third shower head 40c, and the first gas, the second gas, and the third gas are respectively discharged into the processing container 2 from these.
- the first gas, the second gas, and the third gas are supplied while controlling the flow rate, exhausted from the exhaust port 11 by the exhaust device 14 while controlling the automatic pressure control valve (APC) 13,
- the inside of the processing container 2 is maintained at a predetermined pressure.
- the temperature of the substrate S is measured by a thermocouple (not shown) provided in the processing container 2, and the power of the high frequency power is controlled based on the temperature to control the temperature of the substrate S to a predetermined process temperature.
- the region (region I in FIG. 7) corresponding to the first shower head 40a in the processing container 2 becomes the atmosphere of the first gas
- the region corresponding to the first shower head 40b in the processing container 2 (FIG. 7).
- the region II) of FIG. 7 becomes the atmosphere of the second gas
- the region (region III of FIG. 7) corresponding to the third shower head 40c in the processing container 2 becomes the atmosphere of the third gas.
- ALD Atomic Layer Deposition
- C 3 H 8 gas as a C source SiH 4 gas as the Si source, using H 2 gas as the reduction gas, a C 3 H 8 gas from the first shower head 40a as the first gas
- the SiH 4 gas is discharged as the second gas from the second shower head 40b
- the H 2 is discharged as the third gas from the third shower head 40c, whereby the region I in the processing container 2 is C 3.
- H 8 C 3 H 8 to form a gas atmosphere as a gas supply area, to form a SiH 4 gas atmosphere region II as SiH 4 gas supply area, to form a H 2 gas atmosphere region III as the H 2 gas supply region,
- the SiC film is formed by an ALD method so that the substrate S sequentially passes through these regions (see FIG. 7).
- the number of gas introduction portions and the number of regions are not limited to three, but are determined by the number of processing gases for forming a compound film.
- the present invention is not limited to the above embodiment and can be variously modified.
- the susceptor 3 has a polygonal barrel type, but is not limited to this, and various types such as a cross-sectional star shape as shown in FIG. 8 and a cross-shaped cross shape as shown in FIG. Things can be used.
- a film formation process particularly a film formation process for a compound film, is preferable. Included in the heat treatment of the present invention.
- various substrates such as a semiconductor substrate, a sapphire substrate, a ZnO substrate, and a glass substrate can be used according to processing, and are not particularly limited.
- graphite is exemplified as the material of the induction heating element.
- the present invention is not limited to this, and conductive ceramics such as SiC can also be used.
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Abstract
Description
したがって、本発明の目的は、基板に対する誘導電流の影響を排除して均一に熱処理を行うことができる、誘導加熱を利用した熱処理装置を提供することにある。
まず、第1の実施形態について説明する。
図1は本発明の第1の実施形態に係る熱処理装置を示す断面図である。図1に示すように、熱処理装置1は、上下方向に延びる円筒状をなす縦型の処理容器2を有している。処理容器2はその上端を塞ぐ天壁2aを有しており、下端は開放されている。この処理容器2は、耐熱性を有し、電磁波(高周波電力)を透過する誘電体材料、例えば石英で構成されている。
次に、本発明の第2の実施形態について説明する。
本実施形態は、化合物膜の成膜に好適な熱処理装置について示す。
図6は本発明の第2の実施形態に係る熱処理装置を示す断面図、図7は本発明の第2の実施形態に係る熱処理装置を用いてSiC膜を成膜する際の概念を示す模式図である。
2;処理容器
3;サセプタ
4;回転機構
5;蓋体
7;誘導発熱体
8,32,42a,42b,42c;ガス導入口
9,9a,9b,9c;ガス供給配管
10;ガス供給部
11;排気口
12;排気配管
14;排気装置
15;誘導加熱コイル
16;高周波電源
20;制御部
30,40;シャワーヘッド
40a;第1シャワーヘッド
40b;第2シャワーヘッド
40c;第3シャワーヘッド
S;基板
Claims (12)
- 複数の基板に熱処理を施す熱処理装置であって、
熱処理が施される複数の基板を収容する処理容器と、
前記処理容器内で複数の基板を保持する基板保持部材と、
前記処理容器内に誘導磁界を形成して誘導加熱するための誘導加熱コイルと、
前記誘導加熱コイルに高周波電力を印加する高周波電源と、
前記処理容器内に処理ガスを供給するガス供給機構と、
前記処理容器内を排気する排気機構と、
前記処理容器内で前記基板保持部材を囲うように前記誘導加熱コイルと前記基板保持部材との間に設けられ、前記誘導磁界によって形成された誘導電流により加熱され、その輻射熱で前記基板保持部材に保持された基板を加熱する誘導発熱体と
を具備し、
前記誘導発熱体により、基板に誘導電流が流れることが阻止される、熱処理装置。 - 前記誘導発熱体により、基板へ誘導電流が流れることが阻止されるように、前記誘導発熱体の厚さ、前記高周波電力の周波数、および誘導加熱コイルと基板との距離のうち少なくとも一つが調整される、請求項1に記載の熱処理装置。
- 前記処理容器は誘電体からなり、前記誘導加熱コイルは前記処理容器の外周に巻回される、請求項1に記載の熱処理装置。
- 前記基板保持部材は、前記処理容器の上下方向に延在する多角柱をなし、その側面に基板が保持されている、請求項1に記載の熱処理装置。
- 前記誘導発熱体はグラファイトで構成されている、請求項1に記載の熱処理装置。
- 前記ガス供給機構は、前記処理容器内にシャワー状に処理ガスを導入するシャワーヘッドを有している、請求項1に記載の熱処理装置。
- 前記基板保持部材を回転させる回転機構をさらに具備する、請求項1に記載の熱処理装置。
- 前記熱処理は、基板上で処理ガスを反応させて所定の膜を成膜する成膜処理である、請求項1に記載の熱処理装置。
- 前記成膜処理は、炭化珪素(SiC)膜または窒化ガリウム(GaN)膜を成膜するものである、請求項8に記載の熱処理装置。
- 前記熱処理は、複数の処理ガスを用いて化合物膜を成膜する成膜処理であり、前記基板保持部材を回転させる回転機構をさらに具備し、前記ガス供給機構は、前記各処理ガスを前記処理容器の異なる領域に供給し、前記回転機構により前記基板保持部材を回転させて、基板が前記各領域を順次通過するようにし、基板に前記複数の処理ガスを順次吸着させる、請求項1に記載の熱処理装置。
- 前記ガス供給機構は、前記各処理ガスをそれぞれ前記処理容器の異なる領域にシャワー状に導入するための複数のシャワーヘッドを有する、請求項10に記載の熱処理装置。
- 前記化合物膜はSiC膜であり、前記複数の処理ガスとしてSi源ガス、C源ガス、還元ガスを用いる、請求項10に記載の熱処理装置。
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KR1020147005442A KR20140057575A (ko) | 2011-09-02 | 2012-07-23 | 열처리 장치 |
US14/236,955 US20140174364A1 (en) | 2011-09-02 | 2012-07-23 | Heat treatment device |
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JP2011191900A JP2013055201A (ja) | 2011-09-02 | 2011-09-02 | 熱処理装置 |
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JP2015153983A (ja) * | 2014-02-18 | 2015-08-24 | 東京エレクトロン株式会社 | 基板処理装置 |
CN106129271B (zh) * | 2016-07-13 | 2018-01-19 | 信利(惠州)智能显示有限公司 | 有源矩阵显示基板的退火方法及装置 |
CN107454700A (zh) * | 2017-08-22 | 2017-12-08 | 苏州三桓电子科技有限公司 | 非接触式电感加热体于制备雾和/或烟生成装置中的用途 |
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JPH06135795A (ja) * | 1992-10-26 | 1994-05-17 | Sumitomo Electric Ind Ltd | 化合物半導体の有機金属気相成長装置及び気相成長方法 |
JP2005294508A (ja) * | 2004-03-31 | 2005-10-20 | Toyo Tanso Kk | サセプタ |
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JPS60236216A (ja) * | 1984-05-09 | 1985-11-25 | Toshiba Mach Co Ltd | 気相成長装置 |
JPS61191015A (ja) * | 1985-02-20 | 1986-08-25 | Hitachi Ltd | 半導体の気相成長方法及びその装置 |
JPH0350185A (ja) * | 1989-07-18 | 1991-03-04 | Furukawa Electric Co Ltd:The | 気相薄膜成長装置 |
JP3659564B2 (ja) * | 1999-10-26 | 2005-06-15 | 財団法人電力中央研究所 | 半導体結晶の製造方法およびこれを利用する製造装置 |
-
2011
- 2011-09-02 JP JP2011191900A patent/JP2013055201A/ja active Pending
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2012
- 2012-07-23 KR KR1020147005442A patent/KR20140057575A/ko not_active Application Discontinuation
- 2012-07-23 US US14/236,955 patent/US20140174364A1/en not_active Abandoned
- 2012-07-23 WO PCT/JP2012/068616 patent/WO2013031430A1/ja active Application Filing
- 2012-08-31 TW TW101131666A patent/TW201327681A/zh unknown
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---|---|---|---|---|
JPH06135795A (ja) * | 1992-10-26 | 1994-05-17 | Sumitomo Electric Ind Ltd | 化合物半導体の有機金属気相成長装置及び気相成長方法 |
JP2005294508A (ja) * | 2004-03-31 | 2005-10-20 | Toyo Tanso Kk | サセプタ |
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US20140174364A1 (en) | 2014-06-26 |
JP2013055201A (ja) | 2013-03-21 |
KR20140057575A (ko) | 2014-05-13 |
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