WO2012141145A1 - Composition de polissage du bord d'un substrat, et procédé de polissage du bord d'un substrat à l'aide de la composition - Google Patents

Composition de polissage du bord d'un substrat, et procédé de polissage du bord d'un substrat à l'aide de la composition Download PDF

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Publication number
WO2012141145A1
WO2012141145A1 PCT/JP2012/059719 JP2012059719W WO2012141145A1 WO 2012141145 A1 WO2012141145 A1 WO 2012141145A1 JP 2012059719 W JP2012059719 W JP 2012059719W WO 2012141145 A1 WO2012141145 A1 WO 2012141145A1
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Prior art keywords
edge
polishing composition
edge polishing
water
substrate
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PCT/JP2012/059719
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English (en)
Japanese (ja)
Inventor
敏男 篠田
一信 荻野
修平 ▲高▼橋
匠学 井出
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株式会社 フジミインコーポレーテッド
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Priority to JP2013509906A priority Critical patent/JP6134644B2/ja
Publication of WO2012141145A1 publication Critical patent/WO2012141145A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to an edge polishing composition mainly used in applications for polishing an edge of a substrate such as a silicon wafer, and a substrate edge polishing method using the polishing composition.
  • Edge crown refers to a phenomenon in which when an epitaxial layer is grown on a substrate, the epitaxial layer is formed so as to rise in the peripheral portion of the substrate rather than the central portion of the substrate.
  • edge polishing it is common to perform primary polishing, secondary polishing, and finish polishing on the substrate surface in order to finish the substrate surface into a mirror surface.
  • secondary polishing may be omitted, or another polishing step may be added between the secondary polishing and the final polishing.
  • Edge polishing is generally performed using an edge polishing composition containing a basic compound in order to achieve a high polishing rate (see, for example, Patent Documents 1 and 2).
  • the basic compound may cause roughness on the edge or surface of the substrate due to excessive etching.
  • the main object of the present invention is to provide an edge polishing composition capable of suppressing roughness generated on the edge and surface of a substrate due to a basic compound, in addition to realizing a high polishing rate. is there.
  • the inventors of the present invention repeatedly studied materials useful for suppressing the roughness of the edge and surface of the substrate. As a result, it was found that roughening of the edge and the surface of the substrate was suppressed by containing the substance adsorbing on the edge and the surface of the substrate in the edge polishing composition. On the other hand, it was also found that when a substance adsorbing on the edge or surface of the substrate was included in the edge polishing composition, the etching effect of the basic compound on the edge of the substrate was weakened, resulting in a decrease in the edge polishing rate. .
  • the polishing rate of the edge of the substrate does not decrease
  • the inventors have experimentally found that the roughness of the edge and the surface of the substrate is suppressed, and have reached the present invention.
  • the synthetic water-soluble polymer having a heterocyclic ring at a side chain or a terminal contains 0.0001% by mass or more, a basic compound, and water.
  • An edge polishing composition is provided.
  • a method for polishing a substrate comprising polishing the edge of the substrate using the edge polishing composition according to the one embodiment, and a step of polishing the edge of the substrate using the polishing method.
  • a method is provided.
  • a preparation method for preparing the edge polishing composition of the above aspect a combination of a first agent and a second agent used in the preparation method, and an edge polishing composition stock solution I will provide a.
  • an edge polishing composition in addition to realizing a high polishing rate, an edge polishing composition is provided that can suppress roughness generated on the edge or surface of a substrate due to a basic compound. Moreover, in addition to being able to polish the edge of the substrate at a high polishing rate, an edge polishing method and a substrate manufacturing method that can obtain a substrate with little roughness on the edge or surface in a short time are provided.
  • the edge polishing composition of the present embodiment contains a synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal, a basic compound, and water.
  • the “synthetic water-soluble polymer” means that it is not a naturally derived water-soluble polymer such as a cellulose derivative or starch. Naturally derived water-soluble polymers are difficult to obtain in a desired structure and molecular weight because the structure and molecular weight depend on the raw materials. In contrast, a synthetic water-soluble polymer can be easily controlled in structure and molecular weight.
  • a synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal has an action of adsorbing to the edge or surface of the substrate, and the edge or surface of the substrate is excessively etched by the basic compound in the edge polishing composition. Prevent receiving. As a result, the occurrence of roughness on the edge and surface of the substrate is suppressed.
  • the heterocyclic ring contained in the synthetic water-soluble polymer in the edge polishing composition includes, for example, monosaccharides such as pentose and hexose, pyrrolidine, tetrahydrofuran, tetrahydrothiophene, azole, furan, thiophene, piperidine, tetrahydropyran, and tetrahydrothiopyran.
  • Heterocycles such as lactams such as pyridine, hexamethyleneimine, hexamethylene oxide, hexamethylene sulfide, azatropyrideneoxycycloheptatriene, tiotropylidene, pyrazole, imidazole, benzimidazole, ⁇ -lactam, ⁇ -lactam, ⁇ -caprolactam It is derived from a compound.
  • a tetrahydrofuran ring, a tetrahydropyran ring, a hexamethylene oxide ring, a ⁇ -lactam ring, a ⁇ -lactam ring, and an ⁇ -caprolactam ring are preferable.
  • the synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal may be any of cationic, nonionic, and anionic. Further, it may be a homopolymer or copolymer containing a monomer having a heterocyclic ring as a repeating unit, or a homopolymer or copolymer containing a monomer having no heterocyclic ring as a repeating unit and a heterocyclic ring. It may be an addition reaction product with a compound having the same. Although it does not specifically limit, It is preferable that it is a homopolymer or a copolymer containing any one of polyalkylene or polyoxyalkylene more specifically.
  • the synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal include polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopaltimate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monooleate , Polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan tetraoleate, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, polyvinyl imidazole, polyvinyl pyrrolidone, polyvinyl caprolactam, polyvinyl pipette Examples include redone.
  • the content of the synthetic water-soluble polymer in the edge polishing composition is essential to be 0.0001% by mass or more, and preferably 0.0003% by mass or more. When this content is less than 0.0001% by mass, the effect of suppressing the roughness of the edge and surface of the substrate is not sufficiently exhibited.
  • the content of the synthetic water-soluble polymer in the edge polishing composition is preferably 0.0015% by mass or less, more preferably 0.0012% by mass or less in order to achieve a high polishing rate. More preferably, it is 0.001 mass% or less. As this content decreases, the polishing rate of the edge polishing composition is improved.
  • the weight average molecular weight in terms of polyoxyethylene of the synthetic water-soluble polymer in the edge polishing composition is preferably 1,000 or more, more preferably 8,000 or more. As the weight average molecular weight increases, the effect of suppressing roughness of the edge and surface of the substrate is improved.
  • the weight average molecular weight in terms of polyoxyethylene of the synthetic water-soluble polymer in the edge polishing composition is preferably 1,200,000 or less, more preferably 900,000 or less. As the weight average molecular weight decreases, the dispersion stability of the edge polishing composition improves.
  • the basic compound contained in the edge polishing composition has an action of etching the edge of the substrate and chemically polishes the semiconductor substrate.
  • basic compounds include ammonia, potassium hydroxide, sodium hydroxide, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, ammonium bicarbonate, ammonium carbonate.
  • Tetramethylammonium carbonate methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, guanidine, guanidine Carbonate, guanidine hydrochloride, aminoguanidine, aminoguanidine carbonate, aminoguanidine hydrochloride, biguanide, biguanide charcoal Salts, biguanide hydrochloride, sulfamate salt of guanidine, anhydrous piperazine, piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N- methylpiperazine, imidazole, and imidazole derivatives.
  • At least one of a nitrogen atom at the 1st position, a carbon atom at the 2nd position, a carbon atom at the 4th position, and a carbon atom at the 5th position of the imidazole ring is methyl or ethyl. It may be substituted by an alkyl group such as a group, a hydroxy group, a carboxy group, or an amino group.
  • tetramethylammonium hydroxide potassium hydroxide, sodium hydroxide, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate, ammonia, ammonium bicarbonate, Alternatively, it is preferable to use ammonium carbonate.
  • ammonium carbonate may be used alone or in combination of two or more.
  • the content of the basic compound in the edge polishing composition is preferably 0.1% by mass or more, more preferably 0.25% by mass or more, and further preferably 0.5% by mass or more. . As this content increases, the polishing rate of the edge polishing composition is improved.
  • the content of the basic compound in the edge polishing composition is preferably 10.0% by mass or less, and more preferably 6.0% by mass or less. As this content decreases, the dispersion stability of the edge polishing composition improves.
  • Water contained in the edge polishing composition serves to dissolve or disperse other components in the edge polishing composition. It is preferable that water does not contain impurities that inhibit the action of other components as much as possible. Specifically, ion-exchanged water obtained by removing foreign ions through a filter after removing impurity ions using an ion-exchange resin, or pure water, ultrapure water, or distilled water is preferable.
  • the edge polishing composition may further contain abrasive grains.
  • the abrasive grains serve to mechanically polish the edge of the substrate.
  • the content of abrasive grains in the edge polishing composition is preferably 1% by mass or more, and more preferably 1.5% by mass or more. As this content increases, the polishing rate of the edge polishing composition is improved.
  • the content of abrasive grains in the edge polishing composition is preferably 60% by mass or less, more preferably 40% by mass or less. As this content decreases, the dispersion stability of the edge polishing composition improves.
  • the edge polishing composition may further contain a chelating agent.
  • a chelating agent When the chelating agent is contained, metal contamination of the substrate by the edge polishing composition can be suppressed.
  • Examples of chelating agents that can be used in the edge polishing composition include aminocarboxylic acid chelating agents and organic phosphonic acid chelating agents.
  • Examples of aminocarboxylic acid chelating agents include ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid sodium, nitrilotriacetic acid, sodium nitrilotriacetic acid, ammonium nitrilotriacetate, hydroxyethylenediaminetriacetic acid, hydroxyethylethylenediaminetriacetic acid, hydroxyethylethylenediaminetriacetic acid Examples include sodium, diethylenetriaminepentaacetic acid, sodium diethylenetriaminepentaacetate, sodium triethylenetetraminehexaacetic acid and sodium triethylenetetraminehexaacetate, diaminopropanoltetraacetic acid, glycol etherdiaminetetraacetic acid.
  • organic phosphonic acid-based chelating agents examples include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic) Acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid Ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, and ⁇ -methyl Examples include phosphonosuccinic acid.
  • preferable chelating agents are ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic acid), triethylenetetramine hexaacetic acid, sodium triethylenetetramine hexaacetate, and most preferable ethylenediaminetetrakis (methylenephosphonic acid), Ethylenetetramine hexaacetic acid.
  • a chelating agent may be used individually by 1 type, or may be used in combination of 2 or more type.
  • the edge polishing composition may further contain a wetting agent.
  • the wetting agent has an effect of increasing the hydrophilicity (wetting property) of the edge or surface of the substrate. If the hydrophilicity of the edge or surface of the substrate is low, the components in the polishing composition, particularly basic compounds, act unevenly on the edge or surface of the substrate, resulting in roughening of the edge or surface of the substrate. May occur. Further, when the hydrophilicity of the edge or surface of the substrate is low, the edge polishing composition tends to remain on the substrate after edge polishing, and the detergency may deteriorate.
  • water-soluble polymers that can be used as wetting agents include cellulose derivatives such as hydroxyethyl cellulose, hydroxypropyl cellulose, carboxymethyl cellulose, polysaccharides such as starch, cyclodextrin, trehalose, pullulan, vinyl polymers such as polyvinyl alcohol, Examples include polyacrylamide, polymethyl methacrylate, polymethyl acrylate, polyoxyalkylene homopolymer, polyoxyalkylene copolymer, and the like.
  • alcohols that can be used as a wetting agent include straight chain or branched chains having 1 to 6 carbon atoms such as methanol, ethanol, propanol, isopropanol, butanol, isobutanol, tert-butanol, pentanol, hexanol and the like. Aliphatic saturated alcohol, glycerin and the like.
  • the wetting agent one kind may be used alone, or two or more kinds may be used in combination.
  • the content of the water-soluble polymer used as the wetting agent in the edge polishing composition is preferably 0.001% by mass or more, more preferably 0.01% by mass or more. As this content increases, it becomes easier to sufficiently enhance the hydrophilicity of the edge and surface of the substrate by the edge polishing composition.
  • the content of the water-soluble polymer used as the wetting agent in the edge polishing composition is preferably 1% by mass or less, more preferably 0.5% by mass or less. As this content decreases, the dispersion stability of the edge polishing composition improves. Moreover, the polishing rate of the edge polishing composition is also improved.
  • the content of the alcohol used as the wetting agent in the edge polishing composition is preferably 0.005% by mass or more, and more preferably 0.02% by mass or more. As this content increases, it becomes easier to sufficiently enhance the hydrophilicity of the edge and surface of the substrate by the edge polishing composition.
  • the content of the alcohol used as the wetting agent in the edge polishing composition is preferably 0.5% by mass or less, more preferably 0.2% by mass or less, and still more preferably 0.8%. 04% by mass or less. As this content decreases, the dispersion stability of the edge polishing composition improves.
  • the pH of the edge polishing composition is preferably 9.0 to 13.0, more preferably 9.5 to 11.4.
  • a pH adjusting agent may be used. It is also possible to use the basic compound explained above as a pH adjuster.
  • the edge polishing composition may further contain known additives such as preservatives, bactericides, surfactants, dispersants and antifoaming agents as necessary.
  • edge of the substrate is polished using the edge polishing composition of the present embodiment, it is possible to suppress the occurrence of roughness on the edge or surface of the substrate.
  • a substrate having a surface can be obtained.
  • the reason why it is possible to suppress the occurrence of roughness on the edge and surface of the substrate has not been clearly elucidated. However, it is estimated as follows. In other words, the reason why it is possible to suppress the occurrence of roughness on the edge or surface of the substrate is that the synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal adsorbs to the edge or surface of the substrate, resulting from excessive etching with a basic compound. This is considered to protect the edge and surface of the substrate.
  • the reason why high polishing rate can be realized is that the synthetic water-soluble polymer adsorbed on the edge of the substrate is easily removed from the edge by the physical force applied to the edge during edge polishing, so that the etching action by the basic compound This is probably because it is not overly disturbed.
  • the substrate that is edge-polished using the edge-polishing composition of the present embodiment is not particularly limited, but is, for example, a semiconductor substrate or a magnetic substrate, and more specifically, a silicon substrate, a SiO 2 substrate, or an SOI substrate.
  • a notch or an orientation flat may be provided at the edge of the substrate for the purpose of representing the orientation of the single crystal.
  • the notch is formed by cutting a part of the edge.
  • the cross-sectional shape of the notch is generally U-shaped or V-shaped.
  • the orientation flat is formed by cutting a part of the substrate into a half-moon shape.
  • the polishing composition is more likely to adhere to the notch or orientation flat portion than to the other portion of the edge. Therefore, the notch or the orientation flat part is particularly prone to roughening.
  • the edge polishing composition of the present embodiment it is possible to suppress the roughness generated in the notch or orientation flat portion, and the finish is comparable to other portions of the edge.
  • the edge polishing composition of the present embodiment can be used in the same apparatus and conditions that are normally used in general substrate edge polishing.
  • the substrate is held by a holder, and the polishing pad disposed perpendicularly or obliquely to the substrate surface is pressed against the edge of the substrate while supplying the edge polishing composition to the polishing pad. And rotate the polishing pad in the circumferential direction of the edge.
  • the polishing pad is polished.
  • the edge polishing composition of this embodiment can be used in the same apparatus and conditions that are normally used in the polishing step of a general substrate manufacturing method.
  • the polishing rate increases as the load applied to the edge of the substrate by the polishing pad, that is, the polishing load increases.
  • the polishing load when polishing the edge of the substrate using the edge polishing composition of the present embodiment is not particularly limited, but in order to obtain a practically sufficient polishing rate, it may be 6 kgf (about 59 N) or more. More preferably, it is 9 kgf (about 88 N) or more. In order to obtain a substrate that is not damaged after polishing, the polishing load is preferably 16 kgf (about 157 N) or less, more preferably 12 kgf (about 118 N) or less.
  • the number of rotations of the polishing pad when polishing the edge of the substrate using the edge polishing composition of the present embodiment is not particularly limited, but is preferably 400 rpm or more in order to obtain a practically sufficient polishing rate. More preferably, it is 600 rpm or more. In order to obtain a substrate that is not damaged after polishing, the number of revolutions of the polishing pad is preferably 1,000 rpm or less, and more preferably 800 rpm or less.
  • any type of polishing pad such as a nonwoven fabric type or a suede type may be used.
  • the polishing pad to be used may contain abrasive grains or may not contain abrasive grains.
  • the edge polishing composition may be used in a so-called pouring that is discarded once used for polishing the edge of the substrate.
  • the edge polishing composition used for polishing the edge of the substrate may be recovered and reused (circulated). More specifically, the used polishing composition discharged from the polishing apparatus may be once collected in a tank and supplied from the tank to the polishing apparatus again. In this case, since it is not necessary to treat the used polishing composition as a waste liquid, it is possible to reduce the environmental load and the cost.
  • the edge polishing composition When used in a circulating manner, the decrease in at least one of the constituent components in the polishing composition consumed or lost by being used for polishing the edge of the substrate is replenished. You may make it perform.
  • a pH adjuster is appropriately supplemented so that the pH of the edge polishing composition is within a predetermined range, preferably 9.0 to 13.0, more preferably. It may be kept within the range of 9.5 to 11.4.
  • the edge polishing composition of the above embodiment may be a one-part type or a multi-part type including a two-part type.
  • the edge polishing composition may be prepared by mixing at least a first agent and a second agent.
  • the first agent contains at least one of a synthetic water-soluble polymer and a basic compound having a heterocyclic ring in the side chain or terminal and water
  • the second agent is a synthesis having a heterocyclic ring in the side chain or terminal.
  • You may contain at least the other of water-soluble polymer and a basic compound, and water.
  • the edge polishing composition contains at least a first agent containing at least a synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal, a basic compound and water, and abrasive grains and water. You may prepare by mixing a 2nd agent. In this case, the abrasive grains can be stored in a stable state in the second agent. Alternatively, edge polishing is performed by mixing a first agent containing at least a basic compound, abrasive grains, and water with a second agent containing at least a synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal and water. A composition for use may be prepared.
  • the synthetic water-soluble polymer can be stored in the second agent in a state where decomposition is suppressed.
  • the edge polishing composition may be prepared by separately supplying the first agent and the second agent to the same polishing apparatus and mixing the first agent and the second agent in the polishing apparatus.
  • the edge polishing composition of the embodiment may be in a concentrated state at the time of production and sale. That is, the edge polishing composition of the above embodiment may be manufactured and sold in the form of a stock solution having a lower water content than the edge polishing composition. In this case, the edge polishing composition is prepared by diluting the stock solution with water. Since water used for dilution is generally available everywhere, transportation and storage costs can be reduced by transporting and storing in the form of a stock solution having a small volume.
  • the concentration ratio of the stock solution is not particularly limited, but is preferably 2 times or more, more preferably 10 times or more, and further preferably 20 times or more.
  • the concentration ratio refers to the ratio of the total volume of the edge polishing composition prepared by diluting water from the stock solution to the total volume of the stock solution.
  • the content of the synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal in the stock solution of the edge polishing composition is preferably 0.002% by mass or more, more preferably 0.004% by mass or more. More preferably, it is 0.006 mass% or more. Moreover, this content is preferably 0.02% by mass or less, more preferably 0.015% by mass or less.
  • an edge polishing composition containing the synthetic water-soluble polymer at an appropriate concentration can be obtained by diluting the stock solution with water at a predetermined dilution rate.
  • the edge polishing composition of the above embodiment may be stored for 24 hours or more at room temperature after diluting the stock solution and preparing it.
  • the storage after preparation is preferably within 24 hours at room temperature.
  • a synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal or a substance instead thereof, a basic compound, an abrasive, a chelating agent and a wetting agent are mixed with ion-exchanged water in Examples 1 to 30 and The edge polishing compositions of Comparative Examples 1 to 26 were prepared.
  • Table 1 shows details of components in each of the edge polishing compositions of Examples 1 to 30 and Comparative Examples 1 to 26.
  • the “average molecular weight” column in the “synthetic water-soluble polymer having a heterocyclic ring at the side chain or terminal or a substance replacing it” column shows the value of the weight average molecular weight in terms of polyoxyethylene.
  • Silicon wafers having a conductivity type of P type, a crystal orientation of ⁇ 100>, a resistivity of 0.1 ⁇ ⁇ cm or more and less than 100 ⁇ ⁇ cm, and a size of 3 cm in length ⁇ 1 cm in width are shown in Examples 1 to 30 and Comparative Examples 1 to It was immersed in each of the 26 edge polishing compositions at room temperature for 24 hours, and it was visually examined whether or not the surface of the silicon wafer after immersion was rough.
  • the “Evaluation” column of Table 1 the “Surface roughness” column shows “A” when no roughness was observed, “B” when almost no roughness was observed, and those with roughness observed. The result of evaluation as “C” is shown.
  • the surface of the silicon wafer was polished under the conditions shown in Table 2.
  • the silicon wafer used had a diameter of 300 mm, a conductivity type of P type, a crystal orientation of ⁇ 100>, and a resistivity of 0.1 ⁇ ⁇ cm to less than 100 ⁇ ⁇ cm.
  • the polishing rate was determined by dividing the difference in mass of the silicon wafer measured before and after polishing by the polishing time.
  • each of the edge polishing compositions of Examples 1 to 30 has a surface roughness evaluation of “A” or “B”, which is a pass level, and the polishing rate evaluation is also “A” to “D”. “This was also acceptable.
  • the evaluation of the surface roughness was “C”, which was not an acceptable level, or the evaluation of the polishing rate was “E”, which was not an acceptable level.

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une composition de polissage d'un bord, qui comprend 0,0001 % en masse ou plus d'un polymère soluble dans l'eau, synthétique, ayant un noyau hétérocyclique dans une chaîne latérale ou à une extrémité de celuie-ci, un composé basique et de l'eau. Le polymère soluble dans l'eau, synthétique, dans la composition de polissage d'un bord a, de préférence, une masse moléculaire moyenne en poids de 1000 ou plus en termes de polyoxyéthylène. Le noyau hétérocyclique dans le polymère soluble dans l'eau, synthétique, est, de préférence, un noyau lactame ou un noyau tétrahydrofurane. Des exemples préférés du polymère soluble dans l'eau, synthétique, comprennent la polyvinylpyrrolidone, le polyvinylcaprolactame, le monolaurate de sorbitan polyoxyéthyléné et le trioléate de sorbitan polyoxyéthyléné.
PCT/JP2012/059719 2011-04-13 2012-04-09 Composition de polissage du bord d'un substrat, et procédé de polissage du bord d'un substrat à l'aide de la composition WO2012141145A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
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WO2013191139A1 (fr) * 2012-06-19 2013-12-27 株式会社 フジミインコーポレーテッド Composition de polissage et procédé de fabrication de substrat utilisant ladite composition
JP2014209623A (ja) * 2013-04-11 2014-11-06 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド シリコンウェーハ研磨組成物及び関連する方法
JP2015070274A (ja) * 2013-09-27 2015-04-13 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド シリコンウェーハを研磨するための化学機械研磨組成物及び関連する方法
WO2015122072A1 (fr) * 2014-02-17 2015-08-20 株式会社Sumco Procédé de fabrication d'une plaquette de semi-conducteur
WO2018055985A1 (fr) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド Composition de polissage, procédé de polissage faisant appel à celle-ci, et procédé de production de substrat semi-conducteur
CN110462797A (zh) * 2017-03-31 2019-11-15 福吉米株式会社 研磨用组合物

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