WO2012124246A1 - Procédé de production de couche mince et dispositif de production de couche mince - Google Patents

Procédé de production de couche mince et dispositif de production de couche mince Download PDF

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Publication number
WO2012124246A1
WO2012124246A1 PCT/JP2012/000400 JP2012000400W WO2012124246A1 WO 2012124246 A1 WO2012124246 A1 WO 2012124246A1 JP 2012000400 W JP2012000400 W JP 2012000400W WO 2012124246 A1 WO2012124246 A1 WO 2012124246A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
thin film
cooling material
main surface
formation region
Prior art date
Application number
PCT/JP2012/000400
Other languages
English (en)
Japanese (ja)
Inventor
本田　和義
岡崎　禎之
末次　大輔
Original Assignee
パナソニック株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to CN2012800091601A priority Critical patent/CN103392025A/zh
Priority to JP2012523161A priority patent/JP5058396B1/ja
Publication of WO2012124246A1 publication Critical patent/WO2012124246A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H01M4/0426—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

L'invention porte sur un dispositif de production de couche mince (100A) doté d'une cuve à vide (22), d'une source de dépôt (9) (source d'évaporation), d'un système de transport (40) et d'un dispositif d'enduction (11). La source de dépôt (9) est utilisée pour former une couche mince sur une première surface principale d'un substrat (21) dans une zone de dépôt (31) dans la cuve à vide (22). Le système de transport (40) est responsable du transport du substrat (21) d'un rouleau de déroulage (23) (position initiale) vers un rouleau d'enroulage (26) (position de récupération) le long d'un trajet de transport conçu de façon à ce que le substrat (21) passe dans la région de dépôt (31). Lors de la formation de la couche mince, le dispositif d'enduction (11) applique sur une seconde surface principale du substrat (21) une matière de refroidissement de substrat (10) qui peut être amenée à s'évaporer par l'application de chaleur au substrat (21).
PCT/JP2012/000400 2011-03-11 2012-01-23 Procédé de production de couche mince et dispositif de production de couche mince WO2012124246A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2012800091601A CN103392025A (zh) 2011-03-11 2012-01-23 薄膜的制造方法和制造装置
JP2012523161A JP5058396B1 (ja) 2011-03-11 2012-01-23 薄膜の製造方法及び製造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011054719 2011-03-11
JP2011-054719 2011-03-11

Publications (1)

Publication Number Publication Date
WO2012124246A1 true WO2012124246A1 (fr) 2012-09-20

Family

ID=46830343

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/000400 WO2012124246A1 (fr) 2011-03-11 2012-01-23 Procédé de production de couche mince et dispositif de production de couche mince

Country Status (3)

Country Link
JP (1) JP5058396B1 (fr)
CN (1) CN103392025A (fr)
WO (1) WO2012124246A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016219186A (ja) * 2015-05-18 2016-12-22 株式会社アルバック 正極活物質膜、および、成膜方法
WO2019024326A1 (fr) * 2017-07-31 2019-02-07 武汉华星光电半导体显示技术有限公司 Appareil d'évaporation
JP2020158867A (ja) * 2019-03-28 2020-10-01 芝浦メカトロニクス株式会社 成膜装置
CN114231909A (zh) * 2016-04-28 2022-03-25 佳能特机株式会社 真空蒸镀装置以及蒸发源的冷却方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108220890B (zh) * 2016-12-15 2020-02-14 中国航空工业集团公司济南特种结构研究所 一种复材表面电弧离子镀膜方法
CN112606372A (zh) * 2020-12-15 2021-04-06 广东正一包装股份有限公司 一种高阻隔镀铝聚乙烯薄膜的制备方法
CN113684464B (zh) * 2021-08-27 2023-06-02 辽宁分子流科技有限公司 一种用于石墨烯复合薄膜制备的卷绕式设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348853U (fr) * 1989-09-20 1991-05-10
JP2006250909A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd 放射線像変換パネル
JP2009149963A (ja) * 2007-12-22 2009-07-09 Sumitomo Metal Mining Co Ltd 真空成膜方法及び真空成膜装置
WO2009104382A1 (fr) * 2008-02-20 2009-08-27 パナソニック株式会社 Appareil de formation de film mince et procédé de formation de film mince
JP2010080855A (ja) * 2008-09-29 2010-04-08 Nikon Corp 露光装置、露光方法及びデバイスの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007114314A1 (fr) * 2006-03-30 2007-10-11 Kabushiki Kaisha Mikuni Kogyo Procede pour la formation d'une minuscule bosse metallique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348853U (fr) * 1989-09-20 1991-05-10
JP2006250909A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd 放射線像変換パネル
JP2009149963A (ja) * 2007-12-22 2009-07-09 Sumitomo Metal Mining Co Ltd 真空成膜方法及び真空成膜装置
WO2009104382A1 (fr) * 2008-02-20 2009-08-27 パナソニック株式会社 Appareil de formation de film mince et procédé de formation de film mince
JP2010080855A (ja) * 2008-09-29 2010-04-08 Nikon Corp 露光装置、露光方法及びデバイスの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016219186A (ja) * 2015-05-18 2016-12-22 株式会社アルバック 正極活物質膜、および、成膜方法
CN114231909A (zh) * 2016-04-28 2022-03-25 佳能特机株式会社 真空蒸镀装置以及蒸发源的冷却方法
CN114231909B (zh) * 2016-04-28 2023-12-01 佳能特机株式会社 真空蒸镀装置以及蒸发源的冷却方法
WO2019024326A1 (fr) * 2017-07-31 2019-02-07 武汉华星光电半导体显示技术有限公司 Appareil d'évaporation
JP2020158867A (ja) * 2019-03-28 2020-10-01 芝浦メカトロニクス株式会社 成膜装置
JP7319799B2 (ja) 2019-03-28 2023-08-02 芝浦メカトロニクス株式会社 成膜装置

Also Published As

Publication number Publication date
JPWO2012124246A1 (ja) 2014-07-17
CN103392025A (zh) 2013-11-13
JP5058396B1 (ja) 2012-10-24

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