JP5058396B1 - 薄膜の製造方法及び製造装置 - Google Patents

薄膜の製造方法及び製造装置 Download PDF

Info

Publication number
JP5058396B1
JP5058396B1 JP2012523161A JP2012523161A JP5058396B1 JP 5058396 B1 JP5058396 B1 JP 5058396B1 JP 2012523161 A JP2012523161 A JP 2012523161A JP 2012523161 A JP2012523161 A JP 2012523161A JP 5058396 B1 JP5058396 B1 JP 5058396B1
Authority
JP
Japan
Prior art keywords
substrate
thin film
cooling material
main surface
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012523161A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2012124246A1 (ja
Inventor
和義 本田
禎之 岡崎
大輔 末次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2012523161A priority Critical patent/JP5058396B1/ja
Application granted granted Critical
Publication of JP5058396B1 publication Critical patent/JP5058396B1/ja
Publication of JPWO2012124246A1 publication Critical patent/JPWO2012124246A1/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H01M4/0426—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
JP2012523161A 2011-03-11 2012-01-23 薄膜の製造方法及び製造装置 Expired - Fee Related JP5058396B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012523161A JP5058396B1 (ja) 2011-03-11 2012-01-23 薄膜の製造方法及び製造装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011054719 2011-03-11
JP2011054719 2011-03-11
PCT/JP2012/000400 WO2012124246A1 (fr) 2011-03-11 2012-01-23 Procédé de production de couche mince et dispositif de production de couche mince
JP2012523161A JP5058396B1 (ja) 2011-03-11 2012-01-23 薄膜の製造方法及び製造装置

Publications (2)

Publication Number Publication Date
JP5058396B1 true JP5058396B1 (ja) 2012-10-24
JPWO2012124246A1 JPWO2012124246A1 (ja) 2014-07-17

Family

ID=46830343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012523161A Expired - Fee Related JP5058396B1 (ja) 2011-03-11 2012-01-23 薄膜の製造方法及び製造装置

Country Status (3)

Country Link
JP (1) JP5058396B1 (fr)
CN (1) CN103392025A (fr)
WO (1) WO2012124246A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112606372A (zh) * 2020-12-15 2021-04-06 广东正一包装股份有限公司 一种高阻隔镀铝聚乙烯薄膜的制备方法
CN113684464A (zh) * 2021-08-27 2021-11-23 辽宁分子流科技有限公司 一种用于石墨烯复合薄膜制备的卷绕式设备

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6608615B2 (ja) * 2015-05-18 2019-11-20 株式会社アルバック 正極活物質膜、および、成膜方法
JP6641226B2 (ja) * 2016-04-28 2020-02-05 キヤノントッキ株式会社 真空蒸着装置並びに蒸発源の冷却方法
CN108220890B (zh) * 2016-12-15 2020-02-14 中国航空工业集团公司济南特种结构研究所 一种复材表面电弧离子镀膜方法
CN107686966B (zh) * 2017-07-31 2019-09-24 武汉华星光电半导体显示技术有限公司 蒸镀装置
JP7319799B2 (ja) * 2019-03-28 2023-08-02 芝浦メカトロニクス株式会社 成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348853U (fr) * 1989-09-20 1991-05-10
JP2006250909A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd 放射線像変換パネル
JP2009149963A (ja) * 2007-12-22 2009-07-09 Sumitomo Metal Mining Co Ltd 真空成膜方法及び真空成膜装置
WO2009104382A1 (fr) * 2008-02-20 2009-08-27 パナソニック株式会社 Appareil de formation de film mince et procédé de formation de film mince
JP2010080855A (ja) * 2008-09-29 2010-04-08 Nikon Corp 露光装置、露光方法及びデバイスの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7767574B2 (en) * 2006-03-30 2010-08-03 Kabushiki Kaisha Mikuni Kogyo Method of forming micro metal bump

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348853U (fr) * 1989-09-20 1991-05-10
JP2006250909A (ja) * 2005-03-14 2006-09-21 Fuji Photo Film Co Ltd 放射線像変換パネル
JP2009149963A (ja) * 2007-12-22 2009-07-09 Sumitomo Metal Mining Co Ltd 真空成膜方法及び真空成膜装置
WO2009104382A1 (fr) * 2008-02-20 2009-08-27 パナソニック株式会社 Appareil de formation de film mince et procédé de formation de film mince
JP2010080855A (ja) * 2008-09-29 2010-04-08 Nikon Corp 露光装置、露光方法及びデバイスの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112606372A (zh) * 2020-12-15 2021-04-06 广东正一包装股份有限公司 一种高阻隔镀铝聚乙烯薄膜的制备方法
CN113684464A (zh) * 2021-08-27 2021-11-23 辽宁分子流科技有限公司 一种用于石墨烯复合薄膜制备的卷绕式设备

Also Published As

Publication number Publication date
JPWO2012124246A1 (ja) 2014-07-17
WO2012124246A1 (fr) 2012-09-20
CN103392025A (zh) 2013-11-13

Similar Documents

Publication Publication Date Title
JP5058396B1 (ja) 薄膜の製造方法及び製造装置
JP6724967B2 (ja) プラズマを使った前処理装置を有した蒸着装置
CN101889103B (zh) 薄膜形成装置和薄膜形成方法
US8697582B2 (en) Substrate conveying roller, thin film manufacturing device, and thin film manufacturing method
US8877291B2 (en) Method of manufacturing thin film which suppresses unnecessary scattering and deposition of a source material
EP2723914B1 (fr) Procédé et appareil pour un dépôt en phase vapeur
JP5807216B2 (ja) 薄膜の製造方法
JP6513221B2 (ja) 方法及びコーティング設備
JPWO2018193993A1 (ja) 成膜装置及び成膜方法
JP2012197477A (ja) 薄膜製造方法および装置
JP2013089452A (ja) リチウムイオン二次電池用電極の製造方法
JP4613048B2 (ja) 圧力勾配型イオンプレーティング式成膜装置
JP2013008602A (ja) リチウム二次電池用負極の製造装置および製造方法
JP4613056B2 (ja) 圧力勾配型イオンプレーティング式成膜装置および成膜方法
JP2012144783A (ja) 薄膜製造装置及び薄膜製造方法
TW200304498A (en) Method and apparatus for manufacturing thin film
JP2012172261A (ja) 成膜装置
JP2012233215A (ja) マイクロ波プラズマ成膜装置、マイクロ波プラズマ成膜方法、およびガスバリアフィルム
JP2010235968A (ja) 真空処理装置
JP2008291308A (ja) 真空成膜方法
KR20150079749A (ko) 래미네이트 재료, 방법 및 그 제조 장치, 및 그의 용도
JP2023502640A (ja) スパッタ堆積
JP2004018895A (ja) 薄膜製造装置、薄膜の製造方法および薄膜蒸着シートの製造方法
JP2012172260A (ja) 成膜装置
JP2015209577A (ja) 成膜装置および成膜方法

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120710

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120731

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150810

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees