WO2012111520A1 - 積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 - Google Patents
積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 Download PDFInfo
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- WO2012111520A1 WO2012111520A1 PCT/JP2012/052943 JP2012052943W WO2012111520A1 WO 2012111520 A1 WO2012111520 A1 WO 2012111520A1 JP 2012052943 W JP2012052943 W JP 2012052943W WO 2012111520 A1 WO2012111520 A1 WO 2012111520A1
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Definitions
- the present invention relates to a multilayer ceramic capacitor.
- the present invention also relates to a method for manufacturing a multilayer ceramic capacitor.
- the dielectric layers of multilayer ceramic capacitors are being made thinner.
- the electric field strength applied per layer becomes relatively high. Therefore, the dielectric ceramic used for the dielectric layer is required to have improved reliability at the time of voltage application, particularly life characteristics in a high temperature load test.
- the main crystal grains include Ba and Ti.
- BCT crystal particles having a Ca component concentration of 0.4 atomic% or more and a Zr component concentration of 0.2 atomic% or less, and a Ca component concentration of 0.4 atomic% or more and a Zr component concentration of 0.4
- a / B ⁇ 1.003 A multilayer ceramic capacitor that satisfies the above relationship is described. According to this configuration, it is said that a multilayer ceramic capacitor capable of suppressing grain growth of BCTZ crystal particles and BCT crystal particles and improving high-temperature load test characteristics can be obtained.
- the dielectric layer described in Patent Document 1 has an A / B ratio of 1.003 or more, the total amount of Ba and Ca is larger than the total amount of Ti and Zr, and abnormal grain growth is suppressed.
- the insulation was easily deteriorated during the high temperature load test.
- the present invention has been made in view of such a problem, and the dielectric layer is further thinned and has a good dielectric property even when a high electric field strength voltage is applied, and has a life property in a high temperature load test.
- An object of the present invention is to provide an excellent multilayer ceramic capacitor.
- a multilayer ceramic capacitor according to the present invention includes a plurality of laminated dielectric layers having crystal grains and crystal grain boundaries, and a plurality of internal electrodes formed along an interface between the dielectric layers.
- a laminated body and a plurality of external electrodes formed on the outer surface of the laminated body and electrically connected to the internal electrode, the composition of the laminated body including Ba, Ti, and optionally including Ca
- the main component is a perovskite type compound and further contains a rare earth element R and Mn, Mg, V, Si, and Ti is 100 mol parts
- the total content of Ba and Ca (100 ⁇ m) mol parts is: 0.950 ⁇ m ⁇ 1.000, R content a mole part is 0.3 ⁇ a ⁇ 2.5, Mn content b mole part is 0.05 ⁇ b ⁇ 0.00.
- the Mg content c mol part is 0.5 ⁇ c ⁇ 2.0
- the content d mole part is 0.05 ⁇ d ⁇ 0.25
- the Si content e mole part is 0.5 ⁇ e ⁇ 3.0
- the molar ratio of Ca / (Ba + Ca) x is 0 ⁇ x ⁇ 0.10
- the existence probability of the rare earth element R at a position 4 nm inside from the surface of the crystal grain is 20% or more.
- another multilayer ceramic capacitor according to the present invention includes a plurality of laminated dielectric layers having crystal grains and crystal grain boundaries, and a plurality of internal electrodes formed along an interface between the dielectric layers. And a plurality of external electrodes formed on the outer surface of the laminate and electrically connected to the internal electrodes, the composition of the laminate including Ba, Ti, and Ca
- the perovskite type compound optionally containing a main component, the rare earth element R and Mn, Mg, V, and Si are included, and the laminate is dissolved with a solvent, and Ti is 100 mol parts, Ba and The total content (100 ⁇ m) of Ca is 0.950 ⁇ m ⁇ 1.000, the a content of R is 0.3 ⁇ a ⁇ 2.5, and the content of Mn
- the amount b mole part is 0.05 ⁇ b ⁇ 0.5
- Mg content c mol part is 0.5 ⁇ c ⁇ 2.0
- V content d mol part is 0.05 ⁇ d ⁇ 0.25
- another multilayer ceramic capacitor according to the present invention includes a plurality of laminated dielectric layers each having crystal grains and crystal grain boundaries, and a plurality of internal layers formed along an interface between the dielectric layers.
- the main component is a perovskite-type compound that optionally contains Ca, and further contains rare earth element R, Mn, Mg, V, and Si
- Ti is 100 mole parts
- the total content of Ba and Ca 100 ⁇ m
- the molar part is 0.950 ⁇ m ⁇ 1.000
- the R content a molar part is 0.3 ⁇ a ⁇ 2.5
- the Mn content b molar part is 0.00.
- Mg content c mol part is 0.5 ⁇ c ⁇ 0.0
- d mol part of V is 0.05 ⁇ d ⁇ 0.25
- e mol part of Si content is 0.5 ⁇ e ⁇ 3.0
- Ca / (Ba + Ca) molar ratio x is 0 ⁇ x ⁇ 0.10
- the existence probability of rare earth element R at a position 4 nm inside from the surface of the crystal grain is 20% or more, To do.
- the thickness of the dielectric layer is preferably 0.4 ⁇ m or more and 1.5 ⁇ m or less.
- a method for producing a multilayer ceramic capacitor according to the present invention includes a step of preparing a main component powder containing a perovskite type compound containing Ba, Ti and optionally containing Ca, a compound of rare earth element R, Step of preparing Mn compound, Mg compound, V compound, Si compound, main component powder, rare earth element R compound, Mn compound, Mg compound, V compound, Si compound are mixed, and then ceramic slurry Obtaining a ceramic green sheet from the ceramic slurry; stacking the ceramic green sheet and the internal electrode layer to obtain a laminate before firing; firing the laminate before firing; A step of obtaining a laminate in which internal electrodes are formed between body layers, and when Ti is 100 mol parts, the total content of Ba and Ca ( 00 ⁇ m) mole part is 0.950 ⁇ m ⁇ 1.000, R content a mole part is 0.3 ⁇ a ⁇ 2.5, and Mn content b mole part is 0.05 ⁇ b ⁇ 0.5, Mg content c mol part is
- the Si content e mol part is 0.5 ⁇ e ⁇ 3.0
- the molar ratio x of Ca / (Ba + Ca) is 0 ⁇ x ⁇ 0.10
- the dielectric layer includes crystal grains and crystal grain boundaries, and the existence probability of the rare earth element R is 20% or more at a position 4 nm inside from the surface of the crystal grains.
- the dielectric layer has the above-described composition, and the rare earth element is contained at a ratio of 20 mol% or more at a position 4 nm inside from the surface of the crystal grain.
- the rare earth element is contained at a ratio of 20 mol% or more at a position 4 nm inside from the surface of the crystal grain.
- FIG. 1 is a cross-sectional view showing a multilayer ceramic capacitor according to the present invention.
- Experimental Example 1 it is explanatory drawing which shows the location which measured the thickness of the dielectric material layer.
- FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor according to the present invention.
- the multilayer ceramic capacitor 1 includes a multilayer body 5.
- the stacked body 5 includes a plurality of stacked dielectric layers 2 and a plurality of internal electrodes 3 and 4 formed along interfaces between the plurality of dielectric layers 2. Examples of the material of the internal electrodes 3 and 4 include those containing Ni as a main component.
- External electrodes 6 and 7 are formed at different positions on the outer surface of the laminate 5. Examples of the material of the external electrodes 6 and 7 include those containing Ag or Cu as a main component. In the multilayer ceramic capacitor shown in FIG. 1, the external electrodes 6 and 7 are formed on the end surfaces of the multilayer body 5 facing each other. The internal electrodes 3 and 4 are electrically connected to the external electrodes 6 and 7, respectively. The internal electrodes 3 and 4 are alternately stacked inside the stacked body 5 via the dielectric layers 2.
- the multilayer ceramic capacitor 1 may be a two-terminal type including two external electrodes 6 and 7 or a multi-terminal type including a large number of external electrodes.
- the dielectric ceramic composing the dielectric layer 2 contains a perovskite type compound containing Ba and Ti and optionally containing Ca, and further contains a rare earth element R and Mn, Mg, V, and Si.
- R and Mn, Mg, V, and Si a rare earth element
- Mn, Mg, V, and Si a rare earth element
- the existence probability of the said rare earth element in the position inside 4 nm from the surface of a crystal grain is characterized by being 20% or more.
- the existence probability is calculated by the following procedure. First, 100 compositions are analyzed at a position 4 nm inside from the surface of the crystal particles. Then, it is determined whether or not a rare earth element exists at each location, and the ratio of the number of existing locations is defined as the existence probability of the rare earth element.
- the molar ratio of the total amount of Ba and Ca to Ti is smaller than the stoichiometric composition. Moreover, when the existence probability of the rare earth element at a position close to the surface of the crystal particles is a certain ratio or more, a dielectric ceramic having excellent life characteristics in a high temperature load test can be obtained.
- R rare earth
- Mn Mg, V, and Si
- Si may be present in any form. It may exist as an oxide at the grain boundary, or may be dissolved in the main component particles.
- the thickness of the dielectric layer 2 is preferably 0.4 ⁇ m or more and 1.5 ⁇ m or less. In the multilayer ceramic capacitor according to the present invention, the effect of the present invention becomes remarkable within this thickness range.
- the dielectric ceramic raw material powder is produced by, for example, a solid phase synthesis method. Specifically, first, compound powders such as oxides and carbonates containing the main constituent elements are mixed at a predetermined ratio and calcined. In addition to the solid phase synthesis method, a hydrothermal method or the like may be applied.
- the dielectric ceramic according to the present invention may contain alkali metal, transition metal, Cl, S, P, Hf and the like in an amount range that does not hinder the effects of the present invention.
- the multilayer ceramic capacitor is manufactured as follows, for example.
- a ceramic slurry is prepared using the dielectric ceramic raw material powder obtained as described above. Then, a ceramic green sheet is formed by a sheet forming method or the like. And the electroconductive paste which should become an internal electrode is apply
- a ceramic green sheet to be a dielectric layer was formed. Specifically, a polyvinyl butyral binder and an organic solvent such as ethanol were added to the above raw material powder, and wet mixed by a ball mill to prepare a ceramic slurry. And this ceramic slurry was shape
- a conductive paste mainly composed of Ni was printed on a predetermined ceramic green sheet to form a conductive paste layer to be an internal electrode.
- the conductive paste layer was prepared so that the thickness of the internal electrode after firing was 0.4 ⁇ m.
- the ceramic green sheets were laminated so that the side from which the conductive paste layer was drawn was staggered to form a raw laminate.
- the number of ceramic green sheets stacked was 100.
- the temperature was raised to 700 ° C. to burn the binder. Then, the raw laminated body was baked with the profile which hold
- the firing was performed in a reducing atmosphere composed of H 2 —N 2 —H 2 O gas having an oxygen partial pressure of 10 ⁇ 10 MPa.
- the outer dimensions of the multilayer ceramic capacitor produced as described above were 1.0 mm ⁇ 0.5 mm ⁇ 0.5 mm, and the counter electrode area per layer was 0.3 mm 2 .
- the average particle size of the crystal particles in the dielectric layer constituting the multilayer ceramic capacitor was 100 nm to 200 nm.
- the average grain size was measured by breaking the multilayer ceramic capacitor, performing heat treatment to clarify the crystal grain boundaries, and observing the fractured surface using a scanning microscope. In Experimental Example 1, the temperature during the heat treatment was set to 1000 ° C. Then, image analysis was performed on the observed image, and the particle diameter of the crystal particles was measured using the equivalent circle diameter of the crystal particles as the particle diameter. For each sample, the particle diameter of 100 crystal particles was measured, and the average value was calculated as the average particle diameter.
- the multilayer ceramic capacitor was thinned by an ion rimming method.
- the exposed cross section was observed with a TEM to find a crystal grain boundary that was substantially perpendicular to the cross section.
- a line appearing on both sides of the grain boundary that is, Fresnel fringe
- the grain boundary where the contrast of Fresnel fringe changes substantially symmetrically on both sides that is, Fresnel fringe.
- a grain boundary where the change to the bright line and the dark line changes substantially symmetrically on both sides was determined, and this was defined as a grain boundary that was substantially perpendicular to the cross section.
- composition was analyzed using STEM-EDX (probe diameter 2 nm). Since the composition analysis was performed on both sides of each of the crystal grain boundaries that are substantially perpendicular to the cross section of 20 locations, a total of 40 composition analyzes were performed.
- each sample was set up vertically and the periphery of each sample was hardened with resin.
- the LT side surface (length / height side surface; the side surface where the internal electrode is exposed including the connecting portion to the external electrode when polished) of each sample was exposed.
- the LT side surface was polished by a polishing machine, and polishing was finished at a depth of 1 ⁇ 2 of the laminated body in the W direction (width direction) to obtain an LT cross section. Ion rimming was performed on the polished surface to remove sagging due to polishing. In this way, a cross section for observation was obtained.
- a perpendicular perpendicular to the internal electrode was drawn in the L direction (length direction) 1/2 of the LT cross section.
- the region where the internal electrodes of the sample were laminated was divided into three equal parts in the T direction (height direction), and divided into three regions, an upper part U, an intermediate part M, and a lower part D.
- 25 dielectric layers are selected from the center in the height direction of each region (a region including the 25 dielectric layers in FIG. 2 is shown as a measurement region R1), and the dielectric layers of these dielectric layers are selected.
- the thickness on the perpendicular was measured. However, those incapable of measurement due to the internal electrode missing on the perpendicular and the ceramic layers sandwiching the internal electrode being connected were excluded.
- the thickness of the dielectric layer was measured at 75 locations for each sample, and the average value thereof was obtained.
- the thickness of the dielectric layer was measured using a scanning electron microscope.
- the dielectric constant of the multilayer ceramic capacitor according to each experimental condition was determined. Specifically, the capacitance of 50 samples was measured with HP4268 manufactured by Agilent under conditions of a temperature of 25 ° C., 1 kHz, and 0.5 Vrms. Then, the dielectric constant was calculated from the average value, the thickness of the dielectric layer, the number of layers, and the counter electrode area.
- a high temperature load test was performed under conditions of a temperature of 85 ° C. and an electric field strength of 10 kV / mm. And by 2000 hours, the sample whose insulation resistance value became 100 k ⁇ or less was determined to be defective. The high temperature load test was performed on 100 samples.
- Table 1 shows the results of various characteristic evaluations on samples under each experimental condition.
- the sample numbers marked with * are samples outside the scope of the present invention.
- Sample numbers 11 to 14 have BT as a main component and a thickness of a dielectric layer of 1.5 ⁇ m.
- the molar ratio m of Ba to Ti is less than 1.
- the existence probabilities of Dy 4 nm inside from the surface of the crystal grains were 28% and 36%, respectively, and good life characteristics were exhibited even in the high temperature load test.
- m was 1 or more, and a defect occurred in the high temperature load test.
- the dielectric constant also decreased compared to sample numbers 11 and 12.
- Sample numbers 21 to 24 have BCT as a main component and a dielectric layer thickness of 1.5 ⁇ m.
- the molar ratio m of Ti to the total amount of Ba and Ca is less than 1.
- the existence probabilities of Dy 4 nm inside from the surface of the crystal grains were 20% and 27%, respectively, and good life characteristics were exhibited even in the high temperature load test.
- m was 1 or more, and a defect occurred in the high temperature load test.
- Sample Nos. 31 to 34 have BT as a main component and a dielectric layer thickness of 0.4 ⁇ m.
- the molar ratio m of Ba to Ti is less than 1.
- the existence probabilities of Dy inside 4 nm from the surface of the crystal grains were 35% and 52%, respectively, and good life characteristics were exhibited even in the high temperature load test.
- m was 1 or more, and a defect occurred in the high temperature load test.
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Abstract
Description
(A)誘電体セラミックの原料粉末の作製
まず、主成分であるチタン酸バリウム(以下BT)粉末とチタン酸バリウムカルシウム(以下BCT)粉末を用意した。具体的には、BaCO3粉末、CaCO3粉末、及びTiO2粉末を、Tiに対するBaとCaの合計含有量のモル比がm、BaとCaの含有量のモル比がBa:Ca=1-x:xとなるように秤量した。この秤量した粉末を、ボールミルにより24時間混合した後、熱処理を行い、主成分のBT粉末とBCT粉末を得た。BaCO3、CaCO3、及びTiO2の粒径と、熱処理温度を制御することにより、BT粉末とBCT粉末の平均粒径を約100nmに制御した。
まず、誘電体層となるべきセラミックグリーンシートを形成した。具体的には、上記の原料粉末に、ポリビニルブチラール系バインダと、エタノール等の有機溶媒を加えて、ボールミルにより湿式混合してセラミックスラリーを調製した。そして、このセラミックスラリーを、焼成後の誘電体層の厚さが所定の厚さとなるように、ダイコータによりシート状に成形して、セラミックグリーンシートを得た。
まず、結晶粒子の表面から4nm内側の位置でのDyの存在確率を算出した。
2 誘電体層
3、4 内部電極
5 積層体
6、7 外部電極
Claims (5)
- 結晶粒子と結晶粒界とを備えた積層されている複数の誘電体層と、前記誘電体層間の界面に沿って形成されている複数の内部電極と、を有する積層体と、前記積層体の外表面に形成され、前記内部電極と電気的に接続されている複数の外部電極と、を備える積層セラミックコンデンサにおいて、
前記積層体の組成が、Ba、Tiを含み、かつCaを任意で含むペロブスカイト型化合物を主成分とし、さらに希土類元素Rと、Mn、Mg、V、Siとを含み、
前記Tiを100モル部としたとき、
前記Baと前記Caの合計含有量(100×m)モル部が、0.950≦m<1.000であり、
前記Rの含有量aモル部が、0.3≦a≦2.5であり、
前記Mnの含有量bモル部が、0.05≦b≦0.5であり、
前記Mgの含有量cモル部が、0.5≦c≦2.0であり、
前記Vの含有量dモル部が、0.05≦d≦0.25であり、
前記Siの含有量eモル部が、0.5≦e≦3.0であり、
さらに、Ca/(Ba+Ca)のモル比xが、0≦x≦0.10であり、
さらに、前記結晶粒子の表面から4nm内側の位置での、前記希土類元素Rの存在確率が20%以上であることを特徴とする積層セラミックコンデンサ。 - 結晶粒子と結晶粒界とを備えた積層されている複数の誘電体層と、前記誘電体層間の界面に沿って形成されている複数の内部電極と、を有する積層体と、前記積層体の外表面に形成され、前記内部電極と電気的に接続されている複数の外部電極と、を備える積層セラミックコンデンサにおいて、
前記積層体の組成が、Ba、Tiを含み、かつCaを任意で含むペロブスカイト型化合物を主成分とし、さらに希土類元素Rと、Mn、Mg、V、Siとを含み、
前記積層体を溶剤により溶解したときの、前記Tiを100モル部としたとき、
前記Baと前記Caの合計含有量(100×m)モル部が、0.950≦m<1.000であり、
前記Rの含有量aモル部が、0.3≦a≦2.5であり、
前記Mnの含有量bモル部が、0.05≦b≦0.5であり、
前記Mgの含有量cモル部が、0.5≦c≦2.0であり、
前記Vの含有量dモル部が、0.05≦d≦0.25であり、
前記Siの含有量eモル部が、0.5≦e≦3.0であり、
さらに、Ca/(Ba+Ca)のモル比xが、0≦x≦0.10であり、
さらに、前記結晶粒子の表面から4nm内側の位置での、前記希土類元素Rの存在確率が20%以上であることを特徴とする積層セラミックコンデンサ。 - 結晶粒子と結晶粒界とを備えた積層されている複数の誘電体層と、前記誘電体層間の界面に沿って形成されている複数の内部電極と、を有する積層体と、前記積層体の外表面に形成され、前記内部電極と電気的に接続されている複数の外部電極と、を備える積層セラミックコンデンサにおいて、
前記誘電体層の組成が、Ba、Tiを含み、かつCaを任意で含むペロブスカイト型化合物を主成分とし、さらに希土類元素Rと、Mn、Mg、V、Siとを含み、
前記Tiを100モル部としたとき、
前記Baと前記Caの合計含有量(100×m)モル部が、0.950≦m<1.000であり、
前記Rの含有量aモル部が、0.3≦a≦2.5であり、
前記Mnの含有量bモル部が、0.05≦b≦0.5であり、
前記Mgの含有量cモル部が、0.5≦c≦2.0であり、
前記Vの含有量dモル部が、0.05≦d≦0.25であり、
前記Siの含有量eモル部が、0.5≦e≦3.0であり、
さらに、Ca/(Ba+Ca)のモル比xが、0≦x≦0.10であり、
さらに、前記結晶粒子の表面から4nm内側の位置での、前記希土類元素Rの存在確率が20%以上であることを特徴とする積層セラミックコンデンサ。 - 前記誘電体層の厚さが0.4μm以上1.5μm以下である、請求項1ないし3のいずれか1項に記載の積層セラミックコンデンサ。
- Ba、Tiを含み、かつCaを任意で含むペロブスカイト型化合物を主成分とする主成分粉末を用意する工程と、
希土類元素Rの化合物と、Mn化合物、Mg化合物、V化合物、Si化合物とを用意する工程と、
前記主成分粉末と、前記希土類元素Rの化合物と、前記Mn化合物、前記Mg化合物、前記V化合物、前記Si化合物とを混合し、その後、セラミックスラリーを得る工程と、
前記セラミックスラリーからセラミックグリーンシートを得る工程と、
前記セラミックグリーンシートと、内部電極層と、を積み重ねて焼成前の積層体を得る工程と、
前記焼成前の積層体を焼成して、誘電体層間に内部電極が形成された積層体を得る工程と、を備える積層セラミックコンデンサの製造方法であって、
前記Tiを100モル部としたとき、
前記Baと前記Caの合計含有量(100×m)モル部が、0.950≦m<1.000であり、
前記Rの含有量aモル部が、0.3≦a≦2.5であり、
前記Mnの含有量bモル部が、0.05≦b≦0.5であり、
前記Mgの含有量cモル部が、0.5≦c≦2.0であり、
前記Vの含有量dモル部が、0.05≦d≦0.25であり、
前記Siの含有量eモル部が、0.5≦e≦3.0であり、
さらに、Ca/(Ba+Ca)のモル比xが、0≦x≦0.10であり、
さらに、前記誘電体層は結晶粒子と結晶粒界とを備え、前記結晶粒子の表面から4nm内側の位置での、前記希土類元素Rの存在確率が20%以上であることを特徴とする積層セラミックコンデンサの製造方法。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140218840A1 (en) * | 2013-02-06 | 2014-08-07 | Samsung Electro-Mechanics Co., Ltd. | Dielectric composition and multilayer ceramic electronic component using the same |
| US10062509B2 (en) | 2015-12-17 | 2018-08-28 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor and manufacturing method therefor |
| KR101932416B1 (ko) * | 2015-12-11 | 2018-12-26 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 및 그 제조 방법 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014212349A (ja) * | 2014-08-13 | 2014-11-13 | 株式会社村田製作所 | 積層セラミックコンデンサ、これを含む積層セラミックコンデンサ連、および、積層セラミックコンデンサの実装体 |
| JP2015026844A (ja) * | 2014-08-13 | 2015-02-05 | 株式会社村田製作所 | 積層セラミックコンデンサ、これを含む積層セラミックコンデンサ連、および、積層セラミックコンデンサの実装体 |
| US9627136B2 (en) * | 2014-09-30 | 2017-04-18 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor |
| KR101535755B1 (ko) * | 2014-11-14 | 2015-07-09 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 |
| JP6604011B2 (ja) * | 2015-03-18 | 2019-11-13 | 株式会社村田製作所 | セラミック誘電体の観察方法 |
| JP6665438B2 (ja) * | 2015-07-17 | 2020-03-13 | 株式会社村田製作所 | 積層セラミックコンデンサ |
| TWI642074B (zh) * | 2016-06-06 | 2018-11-21 | 村田製作所股份有限公司 | Multilayer ceramic capacitor |
| JP2018022750A (ja) * | 2016-08-02 | 2018-02-08 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
| JP2019134098A (ja) * | 2018-01-31 | 2019-08-08 | Tdk株式会社 | 積層セラミックコンデンサ |
| KR102585981B1 (ko) | 2018-03-28 | 2023-10-05 | 삼성전자주식회사 | 유전체, 및 이를 포함하는 적층형 커패시터, 및 전자 소자 |
| KR102609141B1 (ko) | 2018-03-28 | 2023-12-05 | 삼성전기주식회사 | 유전체 조성물 및 이를 포함하는 전자 부품 |
| KR102620515B1 (ko) * | 2018-04-30 | 2024-01-03 | 삼성전기주식회사 | 적층형 커패시터 |
| JP7040384B2 (ja) * | 2018-09-27 | 2022-03-23 | 株式会社村田製作所 | 積層セラミックコンデンサ |
| KR102724894B1 (ko) * | 2018-11-29 | 2024-11-01 | 삼성전기주식회사 | 커패시터 부품 |
| KR102803430B1 (ko) * | 2020-10-29 | 2025-05-07 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
| KR20230112416A (ko) * | 2022-01-20 | 2023-07-27 | 삼성전기주식회사 | 세라믹 전자 부품 |
| CN114736015B (zh) * | 2022-04-26 | 2022-12-23 | 信阳师范学院 | 一种采用真空热压烧结炉制备的插层锆钛酸钡钙基无铅压电陶瓷及其制备方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002274936A (ja) * | 2001-03-19 | 2002-09-25 | Murata Mfg Co Ltd | 誘電体セラミック、その製造方法およびその評価方法ならびに積層セラミック電子部品 |
| JP2003077754A (ja) * | 2001-08-30 | 2003-03-14 | Kyocera Corp | 積層セラミックコンデンサ及びその製法 |
| WO2006117996A1 (ja) * | 2005-04-27 | 2006-11-09 | Murata Manufacturing Co., Ltd. | 誘電体セラミック及びその製造方法、並びに積層セラミックコンデンサ |
| JP2007197233A (ja) * | 2006-01-24 | 2007-08-09 | Murata Mfg Co Ltd | 誘電体セラミック及び該誘電体セラミックの製造方法、並びに積層セラミックコンデンサ |
| JP2009084111A (ja) * | 2007-09-28 | 2009-04-23 | Tdk Corp | 誘電体磁器組成物および積層型電子部品 |
| WO2010035663A1 (ja) * | 2008-09-24 | 2010-04-01 | 株式会社村田製作所 | 誘電体セラミック組成物および積層セラミックコンデンサ |
| JP2010208905A (ja) * | 2009-03-11 | 2010-09-24 | Murata Mfg Co Ltd | 誘電体セラミックの製造方法と誘電体セラミック、及び積層セラミックコンデンサの製造方法と積層セラミックコンデンサ |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002187770A (ja) * | 2000-12-15 | 2002-07-05 | Toho Titanium Co Ltd | 誘電体磁器組成物及びこれを用いた積層セラミックコンデンサ |
| JP2005294314A (ja) * | 2004-03-31 | 2005-10-20 | Tdk Corp | 積層セラミックコンデンサ |
| JP4508858B2 (ja) | 2004-12-24 | 2010-07-21 | 京セラ株式会社 | 積層セラミックコンデンサおよびその製法 |
| KR100946016B1 (ko) * | 2007-11-16 | 2010-03-09 | 삼성전기주식회사 | 저온 소성 및 고온 절연저항 강화용 유전체 조성물 및 이를이용한 적층 세라믹 커패시터 |
| KR101043462B1 (ko) * | 2008-07-25 | 2011-06-23 | 삼성전기주식회사 | 유전체 조성물 및 이로부터 제조된 세라믹 전자 부품 |
| JP5111426B2 (ja) * | 2009-04-01 | 2013-01-09 | 株式会社村田製作所 | チタン酸バリウム系粉末およびその製造方法、誘電体セラミックならびに積層セラミックコンデンサ |
| JP5246185B2 (ja) * | 2010-03-11 | 2013-07-24 | 株式会社村田製作所 | 誘電体セラミック、及び積層セラミックコンデンサ |
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- 2012-02-09 KR KR1020137007491A patent/KR101464185B1/ko active Active
- 2012-02-09 JP JP2012557914A patent/JP5811103B2/ja active Active
- 2012-02-09 WO PCT/JP2012/052943 patent/WO2012111520A1/ja not_active Ceased
-
2013
- 2013-03-14 US US13/804,798 patent/US20130194718A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002274936A (ja) * | 2001-03-19 | 2002-09-25 | Murata Mfg Co Ltd | 誘電体セラミック、その製造方法およびその評価方法ならびに積層セラミック電子部品 |
| JP2003077754A (ja) * | 2001-08-30 | 2003-03-14 | Kyocera Corp | 積層セラミックコンデンサ及びその製法 |
| WO2006117996A1 (ja) * | 2005-04-27 | 2006-11-09 | Murata Manufacturing Co., Ltd. | 誘電体セラミック及びその製造方法、並びに積層セラミックコンデンサ |
| JP2007197233A (ja) * | 2006-01-24 | 2007-08-09 | Murata Mfg Co Ltd | 誘電体セラミック及び該誘電体セラミックの製造方法、並びに積層セラミックコンデンサ |
| JP2009084111A (ja) * | 2007-09-28 | 2009-04-23 | Tdk Corp | 誘電体磁器組成物および積層型電子部品 |
| WO2010035663A1 (ja) * | 2008-09-24 | 2010-04-01 | 株式会社村田製作所 | 誘電体セラミック組成物および積層セラミックコンデンサ |
| JP2010208905A (ja) * | 2009-03-11 | 2010-09-24 | Murata Mfg Co Ltd | 誘電体セラミックの製造方法と誘電体セラミック、及び積層セラミックコンデンサの製造方法と積層セラミックコンデンサ |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140218840A1 (en) * | 2013-02-06 | 2014-08-07 | Samsung Electro-Mechanics Co., Ltd. | Dielectric composition and multilayer ceramic electronic component using the same |
| KR101932416B1 (ko) * | 2015-12-11 | 2018-12-26 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 및 그 제조 방법 |
| US10062509B2 (en) | 2015-12-17 | 2018-08-28 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor and manufacturing method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130062343A (ko) | 2013-06-12 |
| CN103124706A (zh) | 2013-05-29 |
| JP5811103B2 (ja) | 2015-11-11 |
| US20130194718A1 (en) | 2013-08-01 |
| CN103124706B (zh) | 2015-06-10 |
| KR101464185B1 (ko) | 2014-11-21 |
| JPWO2012111520A1 (ja) | 2014-07-07 |
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