WO2012096268A1 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
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- WO2012096268A1 WO2012096268A1 PCT/JP2012/050297 JP2012050297W WO2012096268A1 WO 2012096268 A1 WO2012096268 A1 WO 2012096268A1 JP 2012050297 W JP2012050297 W JP 2012050297W WO 2012096268 A1 WO2012096268 A1 WO 2012096268A1
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 121
- 239000002245 particle Substances 0.000 claims abstract description 44
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000009467 reduction Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000004993 emission spectroscopy Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Definitions
- the present invention relates to a multilayer ceramic capacitor.
- a multilayer ceramic capacitor which is one of typical ceramic electronic components, generally includes a plurality of laminated ceramic layers and a plurality of internal electrodes formed along an interface between the ceramic layers. And a plurality of external electrodes formed on the outer surface of the laminate and electrically connected to the internal electrodes.
- Patent Document 1 describes a monolithic ceramic capacitor characterized in that the ratio of one layer and one particle formed of one ceramic particle in one ceramic layer is 20% or more. .
- Such a portion of one layer and one particle formed of one ceramic particle in one ceramic layer is in contact with the internal electrodes on both sides in the thickness direction, so that a large stress is applied in the thickness direction and the dielectric constant is increased. There was a problem of decline.
- the present invention has been made in view of such problems, and an object of the present invention is to provide a multilayer ceramic capacitor capable of suppressing a decrease in dielectric constant even when the ceramic layer is made thinner.
- a multilayer ceramic capacitor according to the present invention includes a multilayer body having a plurality of laminated ceramic layers and a plurality of internal electrodes formed along an interface between the ceramic layers, and an outer surface of the multilayer body.
- a multilayer ceramic capacitor comprising a plurality of external electrodes formed and electrically connected to the internal electrodes, ceramic particles in contact with both of the internal electrodes adjacent to each other through the ceramic layer in the ceramic layer And the thickness of the internal electrode is 0.60 ⁇ m or less.
- both of the adjacent internal electrodes among the 100 straight lines drawn at intervals of the average particle diameter of the ceramic particles perpendicular to the internal electrodes are preferably 5 to 20%.
- the ceramic layer may be a perovskite type compound containing Ba and Ti (however, a part of Ba may be substituted by at least one of Ca and Sr, and a part of Ti may be Zr may be substituted as a main component.
- the thickness of the ceramic layer is 1 ⁇ m or less.
- the ceramic particles in the ceramic layer are in contact with both of the adjacent internal electrodes via the ceramic layer, and the thickness of the internal electrode is set to a certain value or less. It is possible to provide a multilayer ceramic capacitor capable of suppressing a decrease in dielectric constant.
- FIG. 1 is a cross-sectional view showing a multilayer ceramic capacitor according to the present invention. It is explanatory drawing which shows the measuring method of the thickness of an internal electrode implemented in the experiment example, and the thickness of a ceramic layer. It is explanatory drawing which shows the measuring method of the particle size of the ceramic particle implemented in the experiment example.
- FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor according to the present invention.
- the multilayer ceramic capacitor 1 includes a multilayer body 5.
- the multilayer body 5 includes a plurality of laminated ceramic layers 2 and a plurality of internal electrodes 3 and 4 formed along interfaces between the plurality of ceramic layers 2. Examples of the material of the internal electrodes 3 and 4 include those containing Ni as a main component.
- External electrodes 6 and 7 are formed at different positions on the outer surface of the laminate 5. Examples of the material of the external electrodes 6 and 7 include those containing Ag or Cu as a main component. In the multilayer ceramic capacitor shown in FIG. 1, the external electrodes 6 and 7 are formed on the end surfaces of the multilayer body 5 facing each other. The internal electrodes 3 and 4 are electrically connected to the external electrodes 6 and 7, respectively. The internal electrodes 3 and 4 are alternately stacked inside the stacked body 5 via the ceramic layers 2.
- the multilayer ceramic capacitor 1 may be a two-terminal type including two external electrodes 6 and 7 or a multi-terminal type including a large number of external electrodes.
- ceramic particles in contact with both the adjacent internal electrodes 3 and 4 through the ceramic layer 2 exist in the ceramic layer 2. Since such ceramic particles have a large particle size, they contribute to an improvement in the dielectric constant of the ceramic layer 2.
- the ceramic particles in contact with both the adjacent internal electrodes 3 and 4 are It exists on a straight line, and the ratio of the number of the straight lines is preferably 5 to 20%.
- the thickness of the internal electrodes 3 and 4 is 0.6 ⁇ m or less.
- the ceramic particles as described above are in contact with both the adjacent internal electrodes 3 and 4 in the thickness direction. Therefore, when the thickness of the internal electrodes 3 and 4 is large, a large stress is applied to the ceramic particles from the internal electrodes 3 and 4, and the dielectric constant decreases. On the other hand, when the thickness of the internal electrodes 3 and 4 is 0.6 ⁇ m or less, the stress applied to the ceramic particles is relaxed, so that the dielectric constant of the ceramic layer 2 is improved.
- the ceramic layer 2 is mainly composed of a perovskite type compound containing Ba and Ti (however, part of Ba may be substituted by at least one of Ca and Sr, and part of Ti may be substituted by Zr). It is preferable to include as. In such a case, the dielectric constant of the ceramic layer 2 is further improved.
- the thickness of the ceramic layer 2 is preferably 1 ⁇ m or less. In such a case, the dielectric constant of the ceramic layer 2 is further improved.
- the multilayer ceramic capacitor 1 is manufactured as follows as an example.
- a ceramic powder as a raw material for the ceramic layer is prepared.
- the ceramic powder is produced, for example, by a solid phase synthesis method. Specifically, first, compound powders such as oxides and carbonates each containing a constituent element of the main component are mixed at a predetermined ratio and calcined to produce a ceramic powder. In addition to the solid phase synthesis method, a hydrothermal synthesis method, a hydrolysis method, or the like may be applied.
- a slurry is prepared using the ceramic powder obtained as described above. Then, a green sheet is formed by a sheet forming method or the like. And after laminating
- Example 1 In Experimental Example 1, a multilayer ceramic capacitor was evaluated in which the main component of the ceramic layer was BaTiO 3 ceramic and the ratio of the ceramic particles in contact with both adjacent internal electrodes and the thickness of the internal electrodes were controlled.
- Dy was selected as the subcomponent, but other than Dy, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb, Lu, and Y At least one kind of element may be used.
- Mg and Mn were selected as subcomponents, in addition to Mg and Mn, at least one element of Ni, Fe, Cu, V, and Y may be used.
- a green sheet to be a ceramic layer was formed. Specifically, a polyvinyl butyral binder and ethanol were added to the ceramic powder of the compound shown in Table 1 and wet mixed by a ball mill to prepare a slurry. This slurry was formed into a sheet by a lip method to obtain a green sheet.
- a conductive paste mainly composed of Ni was screen-printed on a predetermined green sheet of the green sheets to form a conductive paste film to be an internal electrode.
- the thickness of the internal electrode after firing was controlled by controlling the thickness of the conductive paste film to be printed.
- a plurality of samples (sample numbers 11 to 20) having different internal electrode thicknesses are produced.
- the raw laminate was fired. Specifically, first, the binder was burned by heating to a temperature of 300 ° C. in a reducing atmosphere. Thereafter, it was calcined at a temperature of 1200 ° C. for 2 hours in a reducing atmosphere composed of H 2 —N 2 —H 2 O gas having an oxygen partial pressure of 10 ⁇ 10 MPa.
- an external electrode was formed. Specifically, a Cu paste containing B 2 O 3 —Li 2 O—SiO 2 —BaO glass frit was applied to both end faces of the laminate. Then, it heated at the temperature of 800 degreeC in nitrogen atmosphere, and baked Cu paste. In this way, an external electrode electrically connected to the internal electrode was formed.
- the outer dimensions of the multilayer ceramic capacitor fabricated as described above are 1.0 mm in length, 0.5 mm in width, and 0.5 mm in thickness.
- the number of effective ceramic layers is 280, and one ceramic layer.
- the counter area of the inner electrode was 0.3 mm 2 .
- sample numbers 11 to 20 were evaluated.
- the thickness of the internal electrode and the thickness of the ceramic layer were measured. As described above, the thickness of the internal electrode is different in sample numbers 11 to 20 because the thickness of the conductive paste film printed on the green sheet is different. On the other hand, the thickness of the ceramic layer is almost the same in the sample numbers 11 to 20 because the thickness of the green sheet is the same.
- each sample was set up vertically and the periphery of each sample was hardened with resin.
- the LT side surface (length / height side surface; the side surface where the internal electrode is exposed including the connecting portion to the external electrode when polished) of each sample was exposed.
- the LT side surface was polished by a polishing machine, and polishing was finished at a depth of 1 ⁇ 2 of the laminated body in the W direction (width direction) to obtain an LT cross section. Ion rimming was performed on the polished surface to remove sagging due to polishing. In this way, a cross section for observation was obtained.
- a perpendicular perpendicular to the internal electrode was drawn in the L direction (length direction) 1/2 of the LT cross section.
- the region where the internal electrodes of the sample were laminated was divided into three equal parts in the T direction (height direction), and divided into three regions, an upper part U, an intermediate part M, and a lower part D.
- 25 layers of internal electrodes are selected from the central portion in the height direction of each region (a region including the 25 layers of internal electrodes is shown as a measurement region R1 in FIG. 2), The thickness was measured.
- the internal electrode of the outermost layer and the case where the internal electrode was lost on the above-mentioned perpendicular line and the ceramic layer sandwiching the internal electrode was connected were excluded from the measurement object.
- the thickness of the internal electrode was measured at 75 locations for each sample, and the average value thereof was determined.
- the thickness of the internal electrode was measured using a scanning electron microscope.
- Table 2 shows the thickness of each internal electrode of Samples 11-20.
- the thickness of the ceramic layer of each sample was measured.
- the measurement method was in accordance with the above-described method for measuring the thickness of the internal electrode. In the measurement of the thickness of the ceramic layer, the measurement was performed except for the case where the internal electrode was missing on the above-mentioned perpendicular line and the ceramic layer sandwiching the internal electrode was connected.
- the thickness of the ceramic layer was measured at 75 locations for each sample, and the average value thereof was obtained.
- the thickness of the ceramic layer interposed between adjacent internal electrodes was almost the same in each sample, and was 0.8 ⁇ m.
- the measurement area R2 of the polished surface was photographed with a SEM at a magnification of 10,000 times.
- the measurement region R2 was a region in the vicinity of a point corresponding to 1/2 in each of the L and T directions of the polished cross section.
- n 200 was randomly extracted in the measurement region R2. Then, the particle size of 200 particles was measured using a diameter method in which the maximum length in the direction parallel to the internal electrode of each particle was the particle size, and the average value was obtained as the average particle size. .
- Table 2 shows the results of the ratio of the number of straight lines, the thickness of the internal electrodes, and the dielectric constant.
- the sample numbers marked with * are samples outside the scope of the present invention.
- Y 2 O 3 powder was used instead of Dy 2 O 3 powder of Experimental Example 1, and V 2 O 3 powder was used instead of MnCO 3 powder. And these were weighed so that the content of Y, Mg, V, and Si would be the mole part of Table 3 with respect to 100 mole parts of Ti, and blended with the main component ceramic powder. Otherwise, ceramic powders of the compounds shown in Table 3 were prepared in the same manner as in Experimental Example 1.
- the obtained sintered laminate (before external electrode formation) was analyzed by ICP emission spectroscopic analysis. As a result, it was confirmed that the composition was almost the same as that shown in Table 3 except for Ni as an internal electrode component.
- the ratio of the number of straight lines where ceramic particles in contact with both adjacent internal electrodes exist is 0%, and the dielectric constant is low regardless of the thickness of the internal electrodes.
- the thickness of the internal electrodes is 0.63 to 0.80 ⁇ m, and the dielectric constant is low.
- the ratio of the number of straight lines is 7 to 19%, and the thickness of the internal electrode is 0.49 to 0.60 ⁇ m.
- the dielectric constant was 4600-5500, 4500 or more.
- Gd 2 O 3 was used as a subcomponent instead of the Dy 2 O 3 powder of Experimental Example 1. Then, these were weighed so that the contents of Gd, Mg, Mn, and Si would be the mole parts in Table 5 with respect to 100 mole parts of the total content of Ti and Zr, and blended with the main component ceramic powder. Otherwise, ceramic powders of the compounds shown in Table 5 were prepared in the same manner as in Experimental Example 1.
- the ratio of the number of straight lines where ceramic particles in contact with both adjacent internal electrodes exist is 0%, and the dielectric constant is low regardless of the thickness of the internal electrodes.
- the thickness of the internal electrodes is 0.62 to 0.73 ⁇ m, and the dielectric constant is low.
- the ratio of the number of straight lines is 6 to 11%, and the thickness of the internal electrode is 0.42 to 0.60 ⁇ m.
- the dielectric constant was 4700-5500, 4500 or more.
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Abstract
Description
実験例1では、セラミック層の主成分がBaTiO3系セラミックであり、隣り合う内部電極の両方に接するセラミック粒子の存在割合と内部電極の厚さを制御した積層セラミックコンデンサについて評価した。
主成分であるBaxTiO3の出発原料として、BaCO3及びTiO2の各粉末を用意した。そして、これらを表1に示す量、すなわちTi100モル部に対するBaの含有量が100×xモル部=100×1.008モル部=100.8モル部となるように秤量して、水を媒体としてボールミルにより一定時間混合した。その後、蒸発乾燥して仮焼することにより、主成分のセラミック粉末を得た。その際、仮焼温度を900~1100℃の範囲で変化させ、主成分のセラミック粉末の粒径を変化させた。このようにして、後で作製する積層セラミックコンデンサのセラミック層に含まれる、隣り合う内部電極の両方に接するセラミック粒子の存在割合を制御した。
まず、セラミック層となるべきグリーンシートを形成した。具体的には、表1で表される化合物のセラミック粉末に、ポリビニルブチラール系バインダ及びエタノールを加えて、ボールミルにより湿式混合して、スラリーを作製した。このスラリーをリップ方式によりシート状に成形して、グリーンシートを得た。
得られた複数種類の積層セラミックコンデンサ(試料番号11~20)について、各種特性を評価した。
[内部電極の厚さ・セラミック層の厚さの測定]
試料番号11~20につき、内部電極の厚さ、およびセラミック層の厚さを測定した。なお、上述のとおり、内部電極の厚さは、グリーンシート上に印刷した導電性ペースト膜の厚さが異なるため、試料番号11~20において異なる。一方、セラミック層の厚さは、グリーンシートの厚さが同一であるため、試料番号11~20においてほぼ同一となる。
試料番号11~20の各試料を垂直になるように立てて、各試料の周りを樹脂で固めた。このとき、各試料のLT側面(長さ・高さ側面;研磨すると外部電極への接続部分を含めて内部電極が露出する側面)が露出するようにした。研磨機により、LT側面を研磨し、積層体のW方向(幅方向)の1/2の深さで研磨を終了し、LT断面を出した。この研磨面に対しイオンリミングを行い、研磨によるダレを除去した。その後、粒界を明確にするために加熱処理 を行った。今回は1100℃にて加熱を行ったが、測定する試料により温度は適宜選択することができる。このようにして、観察用の断面を得た。
試料11~20のセラミックコンデンサの静電容量を測定し、セラミック層の厚さと内部電極の対向面積から誘電率を算出した。静電容量は、温度25℃、1kHz、AC電圧0.5Vrmsの条件下で測定した。
実験例2では、セラミック層の主成分が(Ba,Ca)TiO3系セラミックである積層セラミックコンデンサについて評価した。
主成分である(Ba0.9Ca0.1)xTiO3の出発原料として、実験例1の出発原料に加えて、CaCO3の粉末を用意した。そして、これらを表3に示す量、すなわちTi100モル部に対するBaの含有量が100×x×0.9モル部=100×1.005×0.9モル部=90.45モル部、Caの含有量が100×x×0.1モル部=100×1.005×0.1モル部=10.05モル部となるように秤量して、水を媒体としてボールミルにより一定時間混合した。また、副成分として、実験例1のDy2O3の粉末の代わりにY2O3の粉末を用い、MnCO3の粉末の代わりにV2O3の粉末を用いた。そして、これらを上記Ti100モル部に対してY、Mg、V、Siの含有量が表3のモル部となるように秤量して主成分のセラミック粉末と配合した。それ以外は実験例1と同様の方法で、表3に表される化合物のセラミック粉末を作製した。
(B)積層セラミックコンデンサの作製
上記誘電体セラミック粉末を用いて、実験例1と同様の方法で積層セラミックコンデンサを作製した。隣り合う内部電極間に介在するセラミック層の厚さは0.7μmとした。
得られた積層セラミックコンデンサについて、実験例1と同様の方法で各種特性を評価した。表4に結果を示す。
実験例3では、セラミック層の主成分が(Ba,Ca)(Ti,Zr)O3系セラミックである積層セラミックコンデンサについて評価した。
主成分である(Ba0.9Ca0.1)x(Ti0.95Zr0.05)O3の出発原料として、実験例1の出発原料に加えて、CaCO3とZr2O3の各粉末を用意した。そして、これらを表5に示す量、すなわちTiとZrの合計含有量100モル部に対するBaの含有量が100×x×0.9モル部=100×1.010×0.9モル部=90.90モル部、Caの含有量が100×x×0.1モル部=100×1.010×0.1モル部=10.10モル部となるように秤量して、水を媒体としてボールミルにより一定時間混合した。また、副成分として、実験例1のDy2O3の粉末の代わりにGd2O3を用いた。そして、これらを上記TiとZrの合計含有量100モル部に対してGd、Mg、Mn、Siの含有量が表5のモル部となるように秤量して主成分のセラミック粉末と配合した。それ以外は実験例1と同様の方法で、表5に表される化合物のセラミック粉末を作製した。
上記誘電体セラミック粉末を用いて、実験例1と同様の方法で積層セラミックコンデンサを作製した。隣り合う内部電極間に介在するセラミック層の厚さは0.5μmとした。
得られた積層セラミックコンデンサについて、実験例1と同様の方法で各種特性を評価した。表6に結果を示す。
2 セラミック層
3、4 内部電極
5 積層体
6、7 外部電極
Claims (4)
- 積層されている複数のセラミック層と、前記セラミック層間の界面に沿って形成されている複数の内部電極と、を有する積層体と、前記積層体の外表面に形成され、前記内部電極と電気的に接続されている複数の外部電極と、を備える積層セラミックコンデンサにおいて、
前記セラミック層中に、前記セラミック層を介して隣り合う前記内部電極の両方に接するセラミック粒子が存在し、かつ、
前記内部電極の厚さが0.60μm以下であることを特徴とする、積層セラミックコンデンサ。 - 前記セラミック層の断面において、前記内部電極に垂直にセラミック粒子の平均粒径の間隔で引いた100本の直線のうち、隣り合う前記内部電極の両方に接するセラミック粒子が前記直線上に存在している直線の数の割合が5~20%であることを特徴とする、請求項1に記載の積層セラミックコンデンサ。
- 前記セラミック層が、BaおよびTiを含むペロブスカイト型化合物(ただし、Baの一部はCa及びSrの少なくとも一方で置換しても良く、Tiの一部はZrで置換しても良い)を主成分として含むことを特徴とする、請求項1または2に記載の積層セラミックコンデンサ。
- 前記セラミック層の厚さが1μm以下であることを特徴とする、請求項1~3のいずれか1項に記載の積層セラミックコンデンサ。
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WO2024171645A1 (ja) * | 2023-02-16 | 2024-08-22 | 太陽誘電株式会社 | 積層セラミック電子部品 |
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