WO2012096239A1 - 受光装置、光学装置および受光装置の製造方法 - Google Patents
受光装置、光学装置および受光装置の製造方法 Download PDFInfo
- Publication number
- WO2012096239A1 WO2012096239A1 PCT/JP2012/050213 JP2012050213W WO2012096239A1 WO 2012096239 A1 WO2012096239 A1 WO 2012096239A1 JP 2012050213 W JP2012050213 W JP 2012050213W WO 2012096239 A1 WO2012096239 A1 WO 2012096239A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light receiving
- microlens
- receiving device
- fluororesin
- inp substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 230000003287 optical effect Effects 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000011347 resin Substances 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 238000002834 transmittance Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 47
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 40
- 230000035945 sensitivity Effects 0.000 claims description 32
- 238000011282 treatment Methods 0.000 claims description 29
- 239000002904 solvent Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000011247 coating layer Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 16
- 239000006087 Silane Coupling Agent Substances 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 238000002493 microarray Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0075—Arrays characterized by non-optical structures, e.g. having integrated holding or alignment means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
Definitions
- the present invention relates to a light receiving device, an optical device, and a method for manufacturing the light receiving device. More specifically, the present invention relates to a light receiving device, an optical device, and a method for manufacturing the light receiving device having high sensitivity to near-infrared to infrared light having a wavelength of at least 1 to 2.5 ⁇ m.
- a structure in which microlenses are arranged for each light receiving element is used in order to increase the light utilization efficiency, that is, in order to increase the light receiving sensitivity.
- a method of forming a monolithic lens by processing the back surface of the InP substrate into a lens shape Patent Document 1.
- a method is disclosed in which after processing thin-plate silicon, germanium, or sapphire to form a microarray lens, the microarray lens is bonded to a light receiving element array (sensor) (Patent Document 2).
- Patent Document 3 a resin layer that forms the base of the lens is formed on the sensor, and a resin microlens is formed on the sensor so that fine irregularities are formed on the surface thereof, thereby suppressing reflection and increasing the light collection efficiency. Proposals have also been made (Patent Document 3).
- the present invention provides a light-receiving device, an optical device, and a method for manufacturing the light-receiving device that can obtain a high-sensitivity and high-quality light-receiving signal at least in the near-infrared to infrared region with a wavelength of 1 ⁇ m to 2.5 ⁇ m. Objective.
- the light receiving device of the present invention includes a plurality of pixels formed on an InP substrate.
- This light receiving device includes a microlens positioned for each region corresponding to a pixel on the back surface of the InP substrate, and the microlens has a variation range of transmittance of 25% or less with respect to light having a wavelength of 0.7 ⁇ m to 3 ⁇ m, and It is formed of a resin material having a transmittance of 70% or more.
- III-V compound semiconductor epitaxially grown on an InP substrate has a band gap corresponding to the wavelength of light in the near infrared region or near infrared to infrared region, and receives light in the near infrared region or near infrared to infrared region. Used to do.
- the light receiving portion is smaller than the pixel and formed in a predetermined range inside the pixel. This is necessary because each pixel functions independently and crosstalk does not occur between the pixels. Since the light receiving portion is formed in a small range with a distance from the pixel end as viewed in a plan view, not all of the light reaching the back surface of the InP substrate contributes to light reception. For this reason, it is possible to further increase the utilization factor of light reaching the InP substrate.
- a microlens (condenser lens) can be arranged for each region corresponding to a pixel.
- the condenser lens can collect parallel or nearly parallel rays near the focal point. For this reason, most or most of the light reaching the back surface of the InP substrate can be condensed on the light receiving portion, and the light utilization efficiency can be increased.
- the microlens is formed of a resin material having a transmittance fluctuation range of 25% or less and a transmittance of 70% or more with respect to light having a wavelength of 0.7 ⁇ m to 3 ⁇ m.
- the plurality of pixels may be arranged one-dimensionally or two-dimensionally. In the case of a two-dimensional array, incidence of the back surface of the substrate is inevitable for connection between the readout electrode of the ROIC (readout circuit Read Out IC) and the pixel electrode.
- ROIC readout circuit Read Out IC
- the one-dimensional case it may be incident on the back surface of the substrate or incident on the surface of the epitaxial layer opposite to the substrate.
- substrate back-side incidence is better even in a one-dimensional case, and the present invention assumes substrate back-side incidence even in a one-dimensional arrangement.
- the micro lens for every some pixel is a sheet form, and is called a micro lens array, a micro lens sheet, etc.
- the resin material does not substantially contain CH bonds. This is because a resin containing a CH bond has a large absorption band in the wavelength range of 0.7 ⁇ m to 3 ⁇ m. For this reason, when the microlens is formed of a resin material having a CH bond, the received signal is subjected to fluctuation due to the absorption band, which is larger than the received light signal. As a result, the reliability of the received light signal is reduced. By forming the microlens using a resin material that does not substantially contain a CH bond, it is possible to obtain a highly reliable light-receiving signal with high reliability while improving sensitivity.
- a fluororesin as the material of the microlens.
- an amorphous fluororesin mainly composed of a transparent alicyclic fluororesin having no CH bond is selected. It is preferable to do this.
- the material represented by the following chemical formula (1) corresponds to the amorphous fluororesin, and examples thereof include Cytop and Lumiflon (trade name) manufactured by Asahi Glass.
- a SiN film or a SiON film is preferably coated between the back surface of the InP substrate and the microlens. As a result, it is possible to improve the light receiving sensitivity by obtaining an antireflection effect by the SiN film or the SiON film. At the same time, since the adhesiveness (adhesiveness) between the SiN film or the SiON film and a resin such as a fluororesin is good, the microlens or the microlens array can be securely fixed.
- a SiN film or SiON film is coated between the back surface of the InP substrate and the microlens, and (i) a treatment agent that enhances the adhesion of the SiN film or SiON film is attached to the surface layer of the SiN film or SiON film.
- a resin material constituting the microlens contains a treatment agent that enhances adhesion, and the microlens is fixed to the SiN film or SiON film with the treatment agent interposed therebetween. Can be taken.
- the treatment agent that enhances the above-described adhesion is used. For example, a trace amount additive is mix
- a certain solvent containing the additive is applied to the SiN film or the SiON film, and then left at a high temperature to volatilize the previous solvent, thereby further improving the adhesive force with the SiN film or the SiON film.
- an amine silane coupling agent KBM903 manufactured by Shin-Etsu Chemical
- a mercapto silane coupling agent KBM803 manufactured by Shin-Etsu Chemical
- a methacrylic silane coupling agent KBM503
- examples thereof include a silane treating agent having a relatively small CH bond content.
- the amount of the silane treatment agent used is not from the viewpoint of the adhesiveness between the SiN film or the SiON film and the fluororesin, and the light transmittance decrease in the wavelength range of 0.7 ⁇ m to 3 ⁇ m accompanying the increase of CH bonds. It is preferably about 1 part by weight or less with respect to 100 parts by weight of the crystalline fluororesin.
- a base treatment layer of a processing agent for enhancing the adhesive force is formed on the back surface of the InP substrate, and the microlens is fixed to the back surface of the InP substrate through the base treatment layer.
- the SiN film or the SiON film is not used, and the adhesive force is enhanced by the processing agent.
- a groove or wall having a depth less than the thickness of the microlens may be formed so as to surround the microlens along the pixel boundary.
- a light receiving portion that includes a light receiving layer and a window layer on an InP substrate and receives light occupying the core of the pixel includes a pn junction formed in the light receiving layer by selectively diffusing impurities from the window layer.
- the light receiving portion is separated from the region not selectively diffused, and the pixel is surrounded by a region not selectively diffused around the light receiving portion.
- the microlens is preferably centered on the light receiving portion and covers a region that is not selectively diffused.
- an impurity region (referred to as an i region) in which the impurity concentration in a region on the side opposite to the side where the impurity element is introduced by selective diffusion is low enough to be regarded as an intrinsic semiconductor is referred to as the impurity introduced by diffusion.
- a junction formed between the region and the i region can also be included. That is, the pn junction may be a pi junction or an ni junction, and further includes a case where the p concentration or the n concentration in the pi junction or ni junction is as low as the background.
- the light that has traveled in the above-described interval which is a region that is not selectively diffused, passes without being received.
- the above microlens By arranging the above microlens, high sensitivity can be obtained even if the light receiving part is formed by selective diffusion.
- the diameter of the light receiving portion and the minimum width of the region that is not selectively diffused are substantially the same, and the microlens is preferably formed so as to be inscribed in the section of the pixel so as to occupy the pixel. As a result, it is possible to almost eliminate the light irradiation region that is not likely to be received, and to improve the sensitivity.
- the light-receiving layer can be constituted by a type 2 multiple quantum well (MQW) structure of two different III-V compound semiconductors lattice-matched to InP within a range of ⁇ 0.5%.
- MQW multiple quantum well
- type 2 MQW is used in order to give light reception sensitivity to a long wavelength in the near infrared region, light is received at the interface between two different III-V compound semiconductor layers. For this reason, it is usual to form several tens to several hundreds of layer interfaces or pairs in order to ensure sensitivity, but the sensitivity is still insufficient.
- An optical device includes any one of the light receiving devices described above and a readout circuit (ROIC: ReadOut IC). Accordingly, it is possible to provide an optical device that can obtain a highly-sensitive and highly reliable light-receiving signal.
- the optical device may be any device including the light receiving device and the readout circuit.
- the method of manufacturing a light receiving device includes a step of forming an array of light receiving elements on a InP substrate using light receiving elements having a light receiving sensitivity of at least a wavelength of 1 ⁇ m to 2.5 ⁇ m as pixels, and a back surface of the InP substrate for each pixel.
- the fluororesin-containing agent whose viscosity is adjusted by dissolving the fluororesin in a solvent is discharged using a micronozzle, and droplets or peaks of the fluororesin-containing agent are formed for each pixel region.
- the microlens array is formed using a fluororesin by forming a shaped body and then drying.
- the above-mentioned fluororesin-containing agent is a fluororesin-containing agent whose viscosity is adjusted by dissolving an amorphous fluororesin and a silane coupling agent as a treatment agent (for example, aminosilane coupling agent) in a solvent at a ratio of 100: 0.1. It is good. This is discharged using a micro nozzle to form a droplet or a mountain of fluororesin-containing agent for each pixel region, and then dried to form the microlens array made of fluororesin. .
- a step of performing a drying treatment after spraying a silane coupling agent as a treatment agent on the InP substrate before forming droplets or ridges of the fluororesin-containing agent is included. You can also. Furthermore, a coating film of SiN film or SiON film may be formed on the back surface of the InP substrate, and fixing with the microlens array by the fluororesin may be further stabilized by the adhesive force of the SiN film or SiON film.
- a treatment agent for enhancing the adhesion of the SiN film or the SiON film is applied to the surface layer of the SiN film or the SiON film, and then the microlens array is formed, The adhesion strength of the lens array may be increased.
- a fluororesin-containing microlens array can be efficiently and easily obtained by discharging the fluororesin-containing agent into droplets by micropotting or ink jetting and performing a drying treatment. Since the fluororesin-containing agent has water repellency, it can form a drop or mountain with a large contact angle with the base. As a result, it is possible to easily obtain a light receiving device that is economical, has high sensitivity, and provides a high-quality light receiving signal.
- adjacent pixels are used so that the droplet-shaped or mountain-shaped fluororesin-containing agent does not come into contact with the fluororesin-containing agent droplet-shaped or mountain-shaped body of the adjacent pixel and fuse. It is preferable to provide a groove or a wall at the boundary.
- the fluororesin-containing agent is close to a liquid because the solvent accounts for about 90%. For this reason, when droplets of adjacent pixels come into contact with each other, they are fused due to the influence of surface tension and the like, resulting in a shape that does not form a microlens body because water repellency is impaired.
- a microlens can be formed from each droplet or Yamashiro body.
- a sprayer is applied to the InP substrate before forming the fluororesin-containing agent droplets or peaks.
- the substrate can be sprayed 2.3 times with a silane coupling agent, which is a treatment agent, and the substrate can be dried at 85 ° C. for about 2 hours.
- the drying process has a wavelength region of 0.7 ⁇ m to 3 ⁇ m. It is possible to suppress the presence of an extra CH-binding substance that adversely affects the light transmittance in the microlens or the like.
- the coating layer can be formed as a SiN film, a hydrophilic resist film, etc., and these walls can be easily formed to form one microlens for each pixel without causing fusion of droplets. it can.
- Another method of manufacturing a light receiving device includes a step of forming an array of light receiving elements on a InP substrate using light receiving elements having a light receiving sensitivity of at least a wavelength of 1 ⁇ m to 2.5 ⁇ m, and a pixel on the back surface of the InP substrate. And a step of providing a microlens mainly composed of a fluororesin and forming a microlens array on the entire InP substrate. Then, the microlens array forming step includes a step of preparing a female mold of the microlens array, and a fluororesin-containing agent in which the viscosity is adjusted by dissolving the fluororesin in a solvent and applied to the back surface of the InP substrate. And a step of forming a microlens array in which convex lenses that become microlenses are arranged by pressing a mold while aligning with pixels on a moderately dry coating layer. .
- a microlens array can be formed efficiently and easily. Any method may be used for applying the fluororesin-containing agent to the back surface of the InP substrate. For example, a screen printing method, a spin coating method, or the like may be used.
- the adhesion of the microlens array and the InP substrate is performed with the SiN film or the SiON film coated, as in the method using the micronozzle. Stabilization may be achieved.
- any of the treatment agents that enhance the adhesive force regardless of the presence or absence of the coating film may be performed to enhance adhesion.
- a high-quality light-receiving signal can be obtained with high sensitivity at least in the near-infrared to infrared region with a wavelength of 1 ⁇ m to 2.5 ⁇ m.
- FIG. 2 is a plan view of a part of the light receiving device of FIG. 1. It is a figure which shows the relationship between the transmittance
- FIG. 6 is a diagram showing the relationship between the transmittance of fluororesin and the wavelength, and showing a wavelength range of 0.7 ⁇ m to 2.0 ⁇ m. It is a modification of the light receiving device of FIG. 1, and is a view showing a light receiving device and an optical device incorporating the same according to the present invention.
- FIG. 3 is a flowchart showing a method for manufacturing the light receiving device in the first embodiment. It is a flowchart which shows the formation method of a groove
- 10 is a flowchart showing a method for manufacturing the light receiving device in the second embodiment. It is a figure which shows the light-receiving device and optical device in Embodiment 3 of this invention. It is a figure which shows the light reception layer in the light-receiving device of FIG. 9A. It is a figure which shows the light-receiving device and optical device in Embodiment 4 of this invention. It is the elements on larger scale of the light-receiving device of Embodiment 5 of this invention.
- 1 InP substrate 3 light receiving layer, 3a GaAsSb, 3b InGaAs, 4 diffusion concentration distribution adjusting layer, 5 window layer, 6 p-type region, 9 bump, 11 pixel electrode (p part electrode), 15 pn junction, 17 selective diffusion mask Pattern (protective film), 21 microlens, 21a layer of fluororesin-containing agent, 22 groove, 23 wall, 27 SiN film or SiON film, 29 base treatment layer, 33 type 2 MQW light-receiving layer, 35 type, 35f type Surface, 50 light receiving device, 70 ROIC, 71 readout electrode, 79 bump, 100 optical device, pair boundary of K MQW, P pixel.
- FIG. 1 is a diagram showing a light receiving device 50 and an optical device 100 in the embodiment of the present invention.
- a plurality of pixels P are formed in the light receiving device 50.
- An InP-based epitaxial layer including the light receiving layer 3 / window layer 5 is formed on the InP substrate 1.
- a p-type impurity such as zinc (Zn), which is selectively diffused from the opening of the selective diffusion mask pattern 17, is introduced and extends into the light receiving layer 3.
- the selective diffusion mask pattern 17 also serves as a protective film, and is left as it is after being used for selective diffusion of zinc (Zn) which is a p-type impurity.
- a reverse bias voltage is applied between a common ground electrode (not shown) and the pixel electrode 11 that is in ohmic contact with the p-type region, and the near-infrared region of interest in the depletion layer protruding from the pn junction 15 Receives light. At this time, electron-hole pairs are generated, which are read by the pixel electrode and the ground electrode to obtain a light reception signal.
- a readout electrode 71 of a readout circuit (ROIC: Read Out IC) 70 that reads out a received light signal and the pixel electrode 11 of the light receiving device 50 are conductively connected by connection bumps 9 and 79 while facing each other.
- a microlens 21 serving as a condenser lens is disposed on the back surface of the InP substrate 1.
- the microlens 21 is a convex lens and is made of a fluororesin. Thereafter, the light transmittance of the fluororesin at a wavelength of 0.7 ⁇ m to 3 ⁇ m is shown. Since the fluororesin does not contain a CH bond, it does not have a large absorption band at a wavelength of 0.7 ⁇ m to 3 ⁇ m.
- the refractive index of the fluororesin is about 1.3 to 1.5.
- the pn junction 15 is formed at the tip end portion of the selectively diffused p-type region 6, and light reception is performed in the depletion layer extending from here with a reverse bias voltage. For this reason, in plan view, most of the light irradiated on the back surface of the InP substrate 1 passes through the pn junction 15 (see FIG. 2).
- FIG. 2 is a plan view of a part of the light receiving device shown in FIG. A two-dimensional array of p-type regions 6 and pixels P is shown. 1 and 2, for example, the opening diameter of the selective diffusion mask pattern 17 for forming the p-type region 6 is 15 ⁇ m, and the pixel pitch is 30 ⁇ m.
- the plane occupation ratio in the pixel P of the p-type region 6 is about 20%. In other words, after a parallel ray or a substantially parallel ray reaches the InP substrate, the amount of reflection is zero and only about 20% has a possibility of receiving light.
- formation of the p-type region 6 or the pixel P by selective diffusion needs to have a sufficient interval so that interference such as crosstalk does not occur between adjacent pixels P.
- the p-type region 6 has a plane occupation ratio of about 20%.
- the crystal is less susceptible to damage and the dark current can be reduced.
- the convex lens can collect parallel rays or almost parallel rays irradiated on the convex lens in the vicinity of the light receiving unit or the pn junction 15 located near the focal plane. Light that is reflected from the surface of an object or the like and reaches the light receiving device 50 is almost parallel, and is collected near the focal plane by the action of the convex lens or the microlens 21.
- 3A and 3B are diagrams showing the transmittance of the fluororesin.
- the fluororesin exhibits a transmittance of 95% and 93% in the wavelength range of 0.7 ⁇ m to 2.0 ⁇ m and 2.0 ⁇ m to 3.5 ⁇ m.
- the variation in transmittance with respect to wavelength is large. That is, a resin containing a CH bond has an absorption band in an important wavelength range of 1 ⁇ m to 2.5 ⁇ m.
- Silicon oxide and the like have a plurality of very large absorption bands at wavelengths of 1 ⁇ m to 3 ⁇ m, which are still important. For this reason, even if a microlens made of resin or silicon oxide containing CH bonds is provided to increase the amount of light that may contribute to light reception and increase the sensitivity, fluctuations in the transmittance of the microlens And is included in the received light signal. For this reason, the reliability of the received light signal is impaired.
- the fluororesin microlens 21 as in the present embodiment, the amount of light that may contribute to light reception is increased to increase sensitivity, and a highly reliable light reception signal can be obtained. .
- a groove 22 is provided at the boundary of the pixel.
- the microlens 21 is provided so as to be inscribed in the square of the pixel P in order to make the area as large as possible, the following problem occurs.
- the droplets of the fluororesin-containing agent having a viscosity close to that of a liquid are arranged for each pixel by micropotting or ink jetting, they can be easily brought into contact with each other (the manufacturing method will be described later).
- contact occurs before drying the two droplets are fused due to the influence of surface tension and the like, and the contact angle with the substrate becomes small, the droplet shape is not maintained, and the substrate gets wet. As a result, the lens body is not formed. For this reason, as shown in FIGS. 1 and 2, a groove 22 is provided between the pixels P, and the crossing of the droplets can be prevented by the groove.
- the groove 22 may be a wall.
- FIG. 4 is a view showing a light receiving device 50 in which the groove 22 shown in FIG.
- the wall 23 can also prevent the drop-like body in the pixel P from crossing over.
- the shape of the groove 22 or the wall 23 can be, for example, the following dimensions. ⁇ Groove>: 1 ⁇ m wide, 1 ⁇ m to 2 ⁇ m deep ⁇ Wall>: width 1 ⁇ m, height 0.11 ⁇ m to 0.3 ⁇ m
- FIG. 5 is a flowchart showing a method for manufacturing the light receiving device 50 according to the embodiment of the present invention.
- a light receiving element array is formed on an InP substrate.
- the groove 22 or the wall 23 is formed on the back surface of the InP substrate 1 depending on whether the groove 22 or the wall 23 is used.
- the fluororesin-containing agent for forming the microlens is adjusted.
- the fluororesin it is preferable to select an amorphous fluororesin mainly composed of a transparent alicyclic fluororesin having no CH bond.
- an amorphous fluororesin represented by the following chemical formula (1) is preferable, and examples thereof include Cytop and Lumiflon (trade name) manufactured by Asahi Glass.
- Cytop and Lumiflon trade name
- the fluctuation range of the transmittance with respect to light having a wavelength of 0.7 ⁇ m to 3 ⁇ m is 25% or less and the transmittance is 70% or more.
- the dilution solvent may be anything as long as it becomes a solvent such as ethanol, isopropyl alcohol / isobutyl acetate, or water.
- the fluororesin polymer is preferably 5 to 15%, and the remaining solvent and the like is preferably about 95% to 85%.
- the curvature of the surface of the drop-shaped body or the mountain-shaped body is focused on the light receiving portion even if the focal length is shortened to some extent (even if it is focused above the pn junction 15). Not much needed. Further, even if the focal length is increased to some extent, the light collection is ensured and the sensitivity is improved.
- a droplet or a mountain-like body of the fluororesin-containing agent is formed for each pixel P by the micro nozzle.
- the drying process is started.
- the solvent is removed by placing in a thermostatic bath maintained at a constant temperature in the range of 70 ° C. to 250 ° C. You may carry out by heating up in steps from a low temperature tank to a high temperature tank divided into several times.
- FIG. 6A is a flowchart that does not occupy the method for forming the groove 22, and FIG. 6B does not occupy the method for forming the wall 23.
- dicing is performed along the boundary of the pixel P or the groove is formed by etching.
- an SiN film is formed on the back surface of the InP substrate 1 by, for example, a CVD (Chemical Vapor Deposition) method.
- the thickness is preferably the thickness of the wall 23, for example, 0.11 ⁇ m to 0.3 ⁇ m. Thereafter, the region other than the portion that becomes the wall 23 is removed by etching.
- FIG. 7 is a diagram for explaining the light-receiving device 50 and the optical device 100 and the manufacturing method thereof according to the second embodiment of the present invention.
- the present embodiment is the same as the first embodiment in that the light receiving device 50 including the microlens 21 and the readout circuit (ROIC) 70 are combined.
- the present embodiment is different from the first embodiment in that the microlens 21 is formed by the imprint method using a die 35 that is a female die corresponding to the surface shape of the microlens 21.
- the microlens 21 is drawn after being assembled in the optical device 100, but this is merely for convenience of explanation, and actually, the microlens is formed by pressing a mold.
- the process is performed for the light receiving device 50 alone before being combined with the readout circuit. Assuming this point, as shown in FIG. 7, the surface 35f of the mold 35 is pressed against the fluororesin-containing layer 21a in a state where it is easy to be plastically processed before it is diluted and dried. 21 arrays are formed.
- FIG. 8 shows a procedure for forming a microlens array by the imprint method.
- the pressing mold 35 can be formed with unevenness by lithography using electron beam exposure in order to perform fine processing.
- quartz or the like is preferably used because wear resistance is required.
- it is better to adjust the viscosity than in the case of the micropotting method or the ink jet method.
- the lens is a microlens formed by a micropotting method or a microlens formed by an imprint method can be specified by examining the microlens. Further, since the micropotting method often involves the groove 22 or the wall 23, the micropotting method can also be identified.
- FIG. 9A is a diagram showing the light receiving device 50 and the optical device 100 according to Embodiment 3 of the present invention
- FIG. 9B is an enlarged view of the light receiving layer 33 and the like included in the pixel.
- the light receiving layer 33 in the present embodiment is a type 2 multiple quantum well structure MQW having a basic pair of GaAsSb3a and InGaAs3b.
- MQW multiple quantum well structure
- light is received by electrons in the valence band of GaAsSb transitioning to the conduction band of InGaAs to generate electrons / holes.
- the energy difference between the valence band of GaAsSb and the conduction band of InGaAs is smaller than the energy difference between the valence band and the conduction band in GaAsSb (InGaAs)
- light having a long wavelength with low energy can be received.
- the interface of the multiple quantum well structure MQW that is, the interface K illustrated in FIG. 9B.
- the place where the transition occurs is limited as compared with the transition phenomenon occurring in the bulk. Therefore, even if the number of MQW pairs is increased, the sensitivity is reduced.
- the light receiving element as the type 2 MQW light receiving layer 33 has a specific structure in order to maintain good crystallinity. For example, if the impurity concentration becomes too high, the crystallinity of MQW is impaired. Therefore, a diffusion concentration distribution adjusting layer 4 for selective diffusion is arranged, and the p-type impurity concentration is rapidly reduced in this diffusion concentration distribution adjusting layer 4.
- the light receiving layer 33 has a stable concentration distribution in a low range.
- pixel formation by selective diffusion is also preferable for the crystallinity of type 2 MQW.
- the light receiving device 50 and the optical device 100 compensates for low light receiving sensitivity due to the light receiving mechanism while expanding the sensitivity to light in the long wavelength region of the near infrared region, so that the sensitivity exceeds a predetermined level. Can be secured.
- the microlens 21 is made of a fluororesin, a high-quality light reception signal can be obtained in the near infrared region and its long wavelength region.
- FIG. 10 is a diagram illustrating the light receiving device 50 and the optical device 100 according to the fourth embodiment.
- the microlens 21 is arranged in direct contact with the back surface of the InP substrate 1.
- the SiN film or the SiON film 27 is disposed between the microlens 21 and the back surface of the InP substrate 1.
- the adhesiveness (adhesiveness) between the SiN film or the SiON film and a resin such as a fluororesin is good, the microlens or the microlens array can be securely fixed.
- the microlens may be manufactured by any one of the first to third embodiments. In FIG. 10, there are no grooves or walls between the microlenses, but the grooves or walls may be disposed between the microlenses 21.
- an amine silane coupling agent (KBM903 manufactured by Shin-Etsu Chemical), a mercapto silane coupling agent (KBM803 manufactured by Shin-Etsu Chemical), a methacrylic silane coupling agent (KBM503)
- KBM903 manufactured by Shin-Etsu Chemical
- KBM803 manufactured by Shin-Etsu Chemical
- KBM503 methacrylic silane coupling agent
- Examples thereof include a silane treating agent having a relatively small CH bond content.
- the amount of the silane treatment agent used is amorphous from the viewpoint of adhesion between the SiN film or SiON film and the fluororesin, and a decrease in transmittance in the wavelength range of 0.7 ⁇ m to 3 ⁇ m accompanying an increase in CH bonds. It is preferably about 1 part by weight or less with respect to 100 parts by weight of the fluororesin.
- FIG. 11 is a partially enlarged view of the light receiving device 50 according to the fifth embodiment.
- the SiN film or the SiON film is disposed between the microlens 21 and the InP substrate 1.
- the base treatment layer 29 is formed on the back surface of the InP substrate 1 in order to improve the adhesion between the fluororesin on which the microlenses are formed and the InP substrate. That is, before forming the droplets or peaks of the fluororesin-containing agent, the silane coupling agent as the treatment agent is sprayed 2.3 times on the back surface of the InP substrate 1 using a sprayer, and the substrate is 85
- the base treatment layer 29 is formed by performing a drying process at about 2 ° C.
- the subsequent microlens 21 may be manufactured by any of the methods in the first to fourth embodiments. Thereby, the micro lens 21 is firmly fixed to the back surface of the InP substrate 1. In this case, the amorphous fluororesin forming the microlens 21 does not need to be premixed with a silane coupling agent as a treatment agent, and has a wavelength range of 0.7 ⁇ m to 3 ⁇ m by a drying process. It is possible to reduce the presence of an extra CH-binding substance that adversely affects the light transmittance in the microlens or the like.
- a high-sensitivity and high-quality light-receiving signal can be obtained in the near infrared to infrared region with a wavelength of about 0.7 ⁇ m to about 3 ⁇ m.
- these microlenses are made of fluororesin and have flat transmittance-wavelength characteristics with no absorption in the near infrared region and its long wavelength region. Can be obtained.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
また樹脂層を下地としたマイクロレンズアレイでは、樹脂による光吸収が生じて所定域の受光感度を劣化させる。
上記構成によれば、画素に対応する領域ごとにマイクロレンズ(集光レンズ)を配置することができる。集光レンズは、平行光線またはほぼ平行な光線を、焦点付近に集めることができる。このため、InP基板裏面に到達した光の多くまたはほとんどを、受光部に集光することができ、光の利用効率を高めることができる。
そして、マイクロレンズを、波長0.7μm~3μmの光に対する透過率の変動幅が25%以下で、かつ該透過率が70%以上である樹脂材料で形成する。これにより樹脂材料における加工容易性を得ながら、波長0.7μm~3μmの光に対して信頼性の高いマイクロレンズを得ることができる。このため、少なくとも波長1μm~2.5μmの光を高い感度で受光することができ、マイクロレンズを形成する材料によるかく乱のない、高品位の画像、または高品位の受光信号を得ることができる。
上記の複数の画素は、一次元に配列されていてもよいし、二次元に配列されていてもよい。二次元配列の場合、ROIC(読み出し回路Read Out IC)の読み出し電極と画素電極との接続のために、基板裏面入射は必然となる。一次元の場合は、基板裏面入射でも、基板と反対側のエピタキシャル層表面入射でもよい。しかしやはりROICの読み出し電極とのバンプ接続の簡便さを考慮すると一次元の場合でも、基板裏面入射のほうがよく、本発明では、一次元配列の場合でも、基板裏面入射を想定している。
なお、複数の画素ごとにマイクロレンズを設けたものはシート状であり、マイクロレンズアレイ、マイクロレンズシートなどと呼ばれる。
これによって、SiN膜またはSiON膜による反射防止作用を得て受光感度を向上させることができる。同時に、SiN膜またはSiON膜とフッ素樹脂等の樹脂との接着性(固着性)が良好であるため、マイクロレンズまたはマイクロレンズアレイを確実に固定することができる。
SiN膜またはSiON膜とフッ素樹脂との接着性に問題が有る場合、上記の接着力を増強する処理剤を用いる。たとえば、フッ素樹脂中に微量の添加剤を配合する。あるいは、当該SiN膜またはSiON膜に当該添加剤(接着増強剤)を含むある種の溶剤を塗布後に高温に放置して前溶剤を揮発させることで、SiN膜またはSiON膜との接着力の更なる向上をはかることができる。ここで、微量の処理剤として最適な材料としては、アミン系シランカップリング剤(信越化学製KBM903)やメルカブト系シランカップリング剤(信越化学製KBM803)、メタクリル系シランカップリング剤(KBM503)、等のCH結合含量の比較的少ないシラン処理剤を例示できる。そして、シラン処理剤の使用量としては、SiN膜またはSiON膜とフッ素樹脂との接着性と、CH結合の増加に伴う0.7μm~3μmの波長域における光の透過率低下の観点から、非晶性フッ素樹脂100重量部に対して、概ね1重量部以下とするのが好ましい。
上記の構成によって、隣の画素のマイクロレンズとの接触を避けながら、画素一杯にマイクロレンズを設けることで光の利用効率を向上させることができる。この場合、マイクロレンズは、マイクロノズルによって液滴状の樹脂を滴出させて形成される。
なお、上記のpn接合は、次のように、広く解釈するのがよい。受光層内において、不純物元素が選択拡散で導入される側と反対の面側の領域の不純物濃度が、真性半導体とみなせるほど低い不純物領域(i領域と呼ばれる)であり、上記拡散導入された不純物領域と当該i領域との間に形成される接合をも含むものとできる。すなわち、上記のpn接合は、pi接合またはni接合などであってもよく、さらに、これらpi接合またはni接合におけるp濃度またはn濃度がバックグランド程度に低い場合も含むものとするのがよい。
上記の構成によって、選択拡散による不純物フロントであるpn接合を主要部とする受光部は、隣の受光部と比較的大きな間隔をあけて位置する。このため、選択拡散されない領域である上記間隔に進行してきた光は、受光されずに通り過ぎる場合が多い。上記のマイクロレンズを配置されることで、選択拡散による受光部の形成を行っても、高い感度を得ることができる。
これによって、受光される可能性のない光の照射領域をほとんど無くすことができ、感度を向上させることができる。
近赤外域の長波長に受光感度を持たせるために、タイプ2のMQWを利用すると、異なる二つのIII-V族化合物半導体の層の界面で受光が生じる。このため、感度を確保するために層界面またはペア数を数十~数百、形成するのが普通であるが、それでも感度が不足する。このようなタイプ2のMQWの受光層をもつ場合、マイクロレンズを配置することで、近赤外域の長波長側まで受光波長域を拡大した上で、高い感度を得ることができる。
これによって、高感度であって、かつ高信頼性の受光信号が得られる光学装置を提供することができる。光学装置は、上記の受光装置と読み出し回路とを含めばどのような装置であってもよい。
さらにInP基板裏面にSiN膜またはSiON膜のコート膜を形成し、そのSiN膜またはSiON膜の接着力により、フッ素樹脂によるマイクロレンズアレイとの固定をより安定化してもよい。
また、SiN膜もしくはSiON膜を形成する際そのSiN膜もしくはSiON膜の接着力を増強する処理剤をそのSiN膜もしくはSiON膜の表層に付し、その後、前記マイクロレンズアレイを形成して、マイクロレンズアレイの接着力増強をはかってもよい。
インクジェットまたはマイクロポッティング法では、上記のフッ素樹脂含有剤は、溶媒が9割前後を占めるので液体に近い。このため隣り合う画素の滴状体どうしが接触すると表面張力等の影響で融合してしまい、撥水性が損なわれてマイクロレンズの体をなさない形状となる。上記の溝または壁を画素の境界に設けることで、滴状体どうしの接触を防ぐことができ、個々の滴状体または山城体からマイクロレンズを形成することができる。
なお、前述のごとく、マイクロレンズが形成されるフッ素樹脂と、InP基板との接着性を向上させる手段として、前記フッ素樹脂含有剤の滴状体または山状体を形成する前にInP基板に噴霧器を用いて、処理剤であるシランカップリング剤を2.3回噴霧し、当該基板を85℃で2時間程乾燥処理させることもできる。この場合、マイクロレンズを形成する非晶質フッ素樹脂中には、処理剤としてのシランカップリング剤を予め配合させる必要もなくなり、かつ、本乾燥工程により、波長0.7μm~3μmの波長域の光透過性に悪影響を与える余分なCH結合物質がマイクロレンズ等に存在することを抑制させることができる。
これによって、たとえば被覆層をSiN膜、親水性のレジスト膜などとして、簡単にこれらの壁を形成して、滴状体の融合が生じることなく、画素ごとに一つのマイクロレンズを形成することができる。
上記の押し型を用いてマイクロレンズアレイを形成する場合においても、マイクロノズルを用いる方法と同じように、SiN膜またはSiON膜のコート膜を介在させて、マイクロレンズアレイとInP基板との接着の安定化を図ってもよい。また、上記コート膜の有無によらず、接着力を増強する処理剤を、(InP基板裏面に直接付す、フッ素樹脂含有剤に配合する、SiN膜またはSiON膜の表層に付す)のうちのいずれかの処理またはこれらを組み合わせた処理を行って、接着の増強を図ってもよい。
図1は、本発明の実施の形態における、受光装置50および光学装置100を示す図である。受光装置50には、複数の画素Pが形成されている。InP基板1には、受光層3/窓層5、を含むInP系エピタキシャル層が形成されている。p型領域6は、選択拡散マスクパターン17の開口部から選択拡散された、たとえば亜鉛(Zn)などのp型不純物が導入され、受光層3内にまで延びている。選択拡散マスクパターン17は保護膜を兼ねており、p型不純物である亜鉛(Zn)の選択拡散に用いられたあとそのまま残されている。画素Pは、図示しない共通のグランド電極と、p型領域上にオーミック接触する画素電極11との間に逆バイアス電圧を印加されて、pn接合15から張り出す空乏層において対象とする近赤外光を受光する。このとき、電子正孔対が発生するが、これを、画素電極およびグランド電極で読み出して受光信号を得る。
受光信号を読み出す読み出し回路(ROIC:Read Out IC)70の読み出し電極71と、受光装置50の画素電極11とは、対面した状態で、接続バンプ9,79によって導電接続される。このようなROICを用いて受光装置の画素Pからの受光信号を読み出す場合、上述のように基板(裏面)入射となる。
(1)InP基板1の裏面に集光レンズとなるマイクロレンズ21が配置されている。このマイクロレンズ21は凸レンズであり、フッ素樹脂で形成されている。このあとフッ素樹脂の波長0.7μm~3μmでの光の透過率を示すが、フッ素樹脂は、CH結合を含まないために、波長0.7μm~3μmに大きな吸収バンドを持たない。またフッ素樹脂の屈折率は1.3~1.5程度である。このため、高精細な加工を行わなくても、凸レンズを画素Pの領域ごとに設けることで、平行光線またはほぼ平行光線を、焦点面付近に位置する受光部またはpn接合15の付近に光を集めることができる。マイクロレンズの表面の曲率は、焦点距離がある程度短くなっても(pn接合15より上部でフォーカスしても)、当該上部でクロスしたあと拡大して受光部には集光されるので精度はそれほど必要としない。また、焦点距離がある程度長くなっても、光束は確実に受光部に集められる。
この結果、受光感度を高めることができる。上記のように、pn接合15は、選択拡散されたp型領域6の先端部に形成され、ここから逆バイアス電圧で張り出す空乏層において受光が遂行される。このため、平面的にみて、InP基板1の裏面に照射された光のうち、多くの部分はpn接合15を通らずに通過してしまう(図2参照)。
一般に、選択拡散によるp型領域6または画素Pの形成は、隣り合う画素P間でクロストークなどの干渉が生じないように、十分な間隔をとる必要がある。また、選択拡散では、深さ方向だけでなく、開口部から導入された不純物が、わずかであるが横方向に拡散することも考慮する必要がある。このため、平面的にみて、p型領域6の直径と同程度の間隔(p型領域6の間の選択拡散されていない領域の最小幅)をあけているのが実情である。この結果、図2に示すように、p型領域6は、20%程度の平面占有率となる。ただ、画素Pの他の画素からの独立性を保つための他の方法、たとえば画素の境界に、メサエッチングによって深い溝を入れる方法に比べて、結晶が損傷を受けにくく、暗電流を低くできる利点を有する。
CH結合を含む樹脂の場合、波長に対する透過率の変動が大きい。すなわちCH結合を含む樹脂は、波長1μm~2.5μmという肝心要の重要な波長域に吸収帯を持つ。また、酸化ケイ素などは、やはり肝心な波長1μm~3μmに非常に大きな吸収帯を、複数、持つ。このためCH結合を含む樹脂や酸化ケイ素によるマイクロレンズを設けて、受光に寄与する可能性のある光量を増やして感度を上げることができたとしても、マイクロレンズの透過率の変動が、集光によって強調されて受光信号に含まれてしまう。このため受光信号の信頼性を損なうことになる。
本実施の形態のように、フッ素樹脂製のマイクロレンズ21を用いることで、受光に寄与する可能性のある光量を増やして感度を上げた上で、高い信頼性の受光信号を得ることができる。
溝22または壁23の形状は、たとえば、次の寸法とすることができる。
<溝>:幅1μm、深さ1μm~2μm
<壁>:幅1μm、高さ0.11μm~0.3μm
この間、マイクロレンズを形成するためのフッ素樹脂含有剤を調整しておく。フッ素樹脂としては、CH結合を有しない透明な脂環式のフッ素樹脂を主成分とする非晶性フッ素樹脂を選択するのが好ましい。具体的には、下記の化学式(1)で表される非晶性フッ素樹脂が好ましく、例えば旭硝子製サイトップ、ルミフロン(商品名)を挙げることができる。これらのフッ素樹脂を用いた場合、波長0.7μm~3μmの光に対する透過率の変動幅が25%以下で、かつ該透過率が70%以上となる。
マイクロノズルによって画素Pごとにフッ素樹脂含有剤の滴状体または山状体を形成してゆく。すべての画素Pに滴状体を配置した後、乾燥処理に入る。乾燥処理では、70℃~250℃の範囲内の一定温度に保持した恒温槽に入れて、溶媒を除去する。数回に分けて、低温槽から高温槽へと段階的に昇温して行ってもよい。
上記の製造方法によれば、とくに大掛かりな装置を必要としないで、簡単かつ容易に、マイクロポッティング法またはインクジェット法によって、滴状体または山状体の画素からの越境を防止しながら、高い製造歩留まりで、感度を大きく向上させるマイクロレンズ21の配列を得ることができる。
図7は、本発明の実施の形態2における受光装置50および光学装置100、並びにこれらの製造方法、を説明するための図である。本実施の形態においても、マイクロレンズ21を備える受光装置50と、読み出し回路(ROIC)70とが組み合わされている点では、実施の形態1と同じである。本実施の形態では、マイクロレンズ21が、マイクロレンズ21の表面形状に対応する雌型である型35を用いてインプリント法で形成される点で、実施の形態1と異なる。
ただし、図7では、光学装置100に組み上げたあとマイクロレンズ21を形成するように描いてあるが、これはあくまで説明の便宜上のことであって、実際は、型を押し当ててマイクロレンズを形成する工程は、読み出し回路と組み合わせる前に、受光装置50単独について行う。この留意点を前提として、図7に要点を示すように、希釈された乾燥前で、塑性加工しやすい状態のフッ素樹脂含有層21aに対して、型35の表面35fを押し当てて、マイクロレンズ21の配列を形成する。
フッ素樹脂含有剤の層21aを形成するとき、粘度の調整は、マイクロポッティング法またはインクジェット法の場合よりも、固めにするのがよい。上記の方法で製作された型35を押し当てることで、マイクロレンズ21の配列を簡単に得ることができる。
マイクロポッティング法で形成されたマイクロレンズか、またはインプリント法で形成されたマイクロレンズかは、マイクロレンズを検鏡することで特定することができる。また、マイクロポッティング法では、溝22または壁23を伴う場合が多いので、これによっても識別することができる。
図9Aは、本発明の実施の形態3における受光装置50および光学装置100を示す図であり、図9Bは、画素に含まれる受光層33等の拡大図である。本実施の形態における受光層33は、GaAsSb3aとInGaAs3bとを基本のペアとするタイプ2の多重量子井戸構造MQWである。このタイプ2のMQWでは、GaAsSbの価電子帯の電子が、InGaAsの伝導帯に遷移して、電子/正孔を生じることで、受光が起きる。GaAsSbの価電子帯とInGaAsの伝導帯とのエネルギ差は、GaAsSb(InGaAs)内の価電子帯と伝導帯とのエネルギ差よりも小さいので、エネルギの低い長波長の光を受光することができる。しかし、上記のように、GaAsSbの価電子帯の電子が、InGaAsの伝導帯に遷移するため、多重量子井戸構造MQWの界面、すなわち図9Bに例示する界面Kにおいてのみ受光が生じる。このようにタイプ2のMQWでは、バルク内で生じる遷移現象に比べて遷移が生じる場所が限られるため、たとえMQWのペア数を多くしても、感度は小さくなる。
図10は、実施の形態4における受光装置50および光学装置100を示す図である。実施の形態1~3では、マイクロレンズ21は、InP基板1の裏面に、直接、接して配置される。しかし、本実施の形態では、マイクロレンズ21とInP基板1の裏面との間にSiN膜またはSiON膜27が配置されている。これによって、SiN膜またはSiON膜27による反射防止作用を得て受光感度を向上させることができる。同時に、SiN膜またはSiON膜とフッ素樹脂等の樹脂との接着性(固着性)が良好であるため、マイクロレンズまたはマイクロレンズアレイを確実に固定することができる。マイクロレンズは、実施の形態1~3のいずれの方法で製作してもよい。また、図10には、マイクロレンズ間の溝や壁はないが、その溝または壁をマイクロレンズ21の間に配置してもよい。
図11は、実施の形態5における受光装置50の部分拡大図である。実施の形態4では、SiN膜またはSiON膜をマイクロレンズ21とInP基板1との間に配置した。本実施の形態では、マイクロレンズが形成されるフッ素樹脂と、InP基板との接着性を向上させるために、InP基板1の裏面に下地処理層29を形成する。すなわち、フッ素樹脂含有剤の滴状体または山状体を形成する前にInP基板1の裏面に、噴霧器を用いて処理剤であるシランカップリング剤を2.3回噴霧し、当該基板を85℃で2時間程乾燥処理させることで、下地処理層29を形成する。このあとのマイクロレンズ21は、実施の形態1~4のいずれの方法で製造してもよい。これによって、マイクロレンズ21は、InP基板1の裏面に強固に固着される。
この場合、マイクロレンズ21を形成する非晶質フッ素樹脂中には、処理剤としてのシランカップリング剤を予め配合させる必要もなくなり、かつ、乾燥工程により、波長0.7μm~3μmの波長域の光透過性に悪影響を与える余分なCH結合物質がマイクロレンズ等に存在するのを減らすことができる。
Claims (20)
- InP基板に形成された複数の画素を備える受光装置であって、
前記InP基板の裏面において、前記画素に対応する領域ごとに位置するマイクロレンズを備え、
前記マイクロレンズが、波長0.7μm~3μmの光に対する透過率の変動幅が25%以下で、かつ該透過率が70%以上である樹脂材料で形成されていることを特徴とする、受光装置。 - 前記樹脂材料が、CH結合を含まないことを特徴とする、請求項1に記載の受光装置。
- 前記樹脂材料がフッ素樹脂であることを特徴とする、請求項1または2に記載の受光装置。
- 前記InP基板の裏面と前記マイクロレンズとの間にSiN膜またはSiON膜がコートされていることを特徴とする、請求項1~4のいずれか1項に記載の受光装置。
- 前記InP基板の裏面と前記マイクロレンズとの間にSiN膜またはSiON膜がコートされており、(i)そのSiN膜もしくはSiON膜の表層に当該SiN膜もしくはSiON膜の接着力を増強する処理剤が付されているか、または(ii)前記マイクロレンズを構成する前記樹脂材料に接着力を増強する処理剤が含まれており、その処理剤を介在させて前記マイクロレンズが前記SiN膜もしくはSiON膜固定されていることを特徴とする、請求項1~4のいずれか1項に記載の受光装置。
- 前記InP基板の裏面に接着力を増強するための処理剤の下地処理層が形成され、その下地処理層を介在させて、前記マイクロレンズが前記InP基板の裏面に固定されていることを特徴とする、請求項1~4のいずれか1項に記載の受光装置。
- 前記画素の境界に沿って前記マイクロレンズを囲むように、該マイクロレンズの厚み以下の、深さの溝または高さの壁、が形成されていることを特徴とする、請求項1~7のいずれか1項に記載の受光装置。
- 前記InP基板上に受光層および窓層を備え、前記画素の中核を占める光を受光する受光部は、前記窓層から不純物を選択拡散されて前記受光層に形成されたpn接合を含み、該受光部は隣の受光部と選択拡散されていない領域で隔てられており、前記画素は、前記受光部を中心として前記選択拡散されていない領域で囲まれており、前記マイクロレンズは、前記受光部に中心を合わせ前記選択拡散されていない領域を覆うことを特徴とする、請求項1~8のいずれか1項に記載の受光装置。
- 前記pn接合は、pi接合またはni接合などであってもよく、さらに、これらpi接合またはni接合におけるp濃度またはn濃度がバックグランド程度に低い場合も含むものであることを特徴とする、請求項9に記載の受光装置。
- 前記受光部の径と、前記選択拡散されていない領域の最小幅とが、ほぼ同じであり、前記マイクロレンズは前記画素を占めるように該画素の区画に内接するように形成されていることを特徴とする、請求項9または10に記載の受光装置。
- 前記受光層は、InPに±0.5%の範囲内で格子整合する二つのIII-V族化合物半導体の、タイプ2の多重量子井戸構造(MQW:Multi Quantum Well)によって構成されることを特徴とする、請求項9~11のいずれか1項に記載の受光装置。
- 請求項1~12のいずれか1項に記載の受光装置と、読み出し回路(ROIC:Read Out IC)とを備えることを特徴とする、光学装置。
- InP基板に、少なくとも波長1μm~2.5μmに受光感度を有する受光素子を画素として該受光素子のアレイを形成する工程と、
前記InP基板の裏面に前記画素ごとにフッ素樹脂を主成分とするマイクロレンズを設け、該InP基板全体にマイクロレンズアレイを形成する工程とを備え、
前記マイクロレンズアレイの形成工程では、フッ素樹脂を溶媒に溶かして粘度を調整したフッ素樹脂含有剤を、マイクロノズルを用いて放出して前記画素の領域ごとにフッ素樹脂含有剤の滴状体または山状体を形成し、次いで乾燥処理してフッ素樹脂による該マイクロレンズアレイを形成することを特徴とする、受光装置の製造方法。 - 前記マイクロレンズアレイの形成工程の前に、前記滴状または山状のフッ素樹脂含有剤が、隣の画素のフッ素樹脂含有剤の滴状体または山状体と接触して融合しないように、隣り合う前記画素の境界に溝または壁を設けることを特徴とする、請求項14に記載の受光装置の製造方法。
- 前記壁を設けるとき、前記InP基板の裏面に被覆層を形成し、次いで、被覆層の前記壁になる部分以外の部分をエッチングによって除去することを特徴とする、請求項15に記載の受光装置の製造方法。
- InP基板に、少なくとも波長1μm~2.5μmに受光感度を有する受光素子を画素として該受光素子のアレイを形成する工程と、
前記InP基板の裏面に前記画素ごとにフッ素樹脂を主成分とするマイクロレンズを設け、該InP基板全体にマイクロレンズアレイを形成する工程とを備え、
前記マイクロレンズアレイの形成工程は、
前記マイクロレンズアレイの雌型となる型を準備する工程と、
前記フッ素樹脂を溶媒に溶かして粘度を調整したフッ素樹脂含有剤を前記InP基板の裏面に塗布して塗布層を形成する工程と、
適度に乾燥した前記塗布層に、前記画素と位置合わせしながら、前記型を押し当ててマイクロレンズとなる凸レンズが配列されたマイクロレンズアレイを形成する工程とを備えることを特徴とする、受光装置の製造方法。 - 前記InP基板に前記受光素子のアレイを形成した後で前記マイクロレンズを設ける前に、そのInP基板にSiN膜またはSiON膜のコート膜を形成し、その後、前記コート膜に接して前記マイクロレンズを設けることを特徴とする、請求項14~17のいずれか1項に記載の受光装置の製造方法。
- 前記InP基板に、(i)SiN膜もしくはSiON膜を形成し、その形成の際そのSiN膜もしくはSiON膜の表層に当該SiN膜もしくはSiON膜の接着力を増強する処理剤を付し、その後、前記マイクロレンズアレイを形成する、かまたは(ii)SiN膜もしくはSiON膜を形成し、次いで前記フッ素樹脂に予め接着力を増強する処理剤を含ませたフッ素樹脂含有剤を用いて前記マイクロレンズを設けることを特徴とする、請求項14~17のいずれか1項に記載の受光装置の製造方法。
- 前記InP基板の裏面に、接着力を増強する処理剤の下地処理層を形成し、その下地処理層上に前記マイクロレンズを設けることを特徴とする、請求項14~17のいずれか1項に記載の受光装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/979,586 US8809985B2 (en) | 2011-01-14 | 2012-01-07 | Light receiving device, optical device, and method for producing light receiving device |
EP12733894.5A EP2665102A4 (en) | 2011-01-14 | 2012-01-07 | Light receiving device, optical device, and method for manufacturing light receiving device |
CN201280005421.2A CN103329287B (zh) | 2011-01-14 | 2012-01-07 | 光接收装置、光学装置和用于制造光接收装置的方法 |
KR1020137017168A KR20140001971A (ko) | 2011-01-14 | 2012-01-07 | 수광 장치, 광학 장치 및 수광 장치의 제조 방법 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011006139 | 2011-01-14 | ||
JP2011-006139 | 2011-01-14 | ||
JP2011109658A JP2012160691A (ja) | 2011-01-14 | 2011-05-16 | 受光装置、光学装置および受光装置の製造方法 |
JP2011-109658 | 2011-05-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012096239A1 true WO2012096239A1 (ja) | 2012-07-19 |
Family
ID=46507139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/050213 WO2012096239A1 (ja) | 2011-01-14 | 2012-01-07 | 受光装置、光学装置および受光装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8809985B2 (ja) |
EP (1) | EP2665102A4 (ja) |
JP (1) | JP2012160691A (ja) |
KR (1) | KR20140001971A (ja) |
CN (1) | CN103329287B (ja) |
WO (1) | WO2012096239A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014188105A1 (fr) * | 2013-05-22 | 2014-11-27 | Electricite De France | Procédé de fabrication d'un dispositif photosensible |
US9373733B2 (en) * | 2014-06-16 | 2016-06-21 | Sumitomo Electric Industries, Ltd. | Semiconductor light-receiving device and semiconductor light-receiving device array |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6112472B2 (ja) * | 2013-01-15 | 2017-04-12 | 住友電気工業株式会社 | 受光デバイスの製造方法 |
JP6163851B2 (ja) * | 2013-04-25 | 2017-07-19 | 凸版印刷株式会社 | ウェハレベルレンズ及びその製造方法 |
JP6500442B2 (ja) * | 2014-02-28 | 2019-04-17 | 住友電気工業株式会社 | アレイ型受光素子 |
JP2016096163A (ja) * | 2014-11-12 | 2016-05-26 | ソニー株式会社 | 固体撮像装置および製造方法、並びに電子機器 |
US10867834B2 (en) * | 2015-12-31 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
JP2019078970A (ja) * | 2017-10-27 | 2019-05-23 | 富士通コンポーネント株式会社 | レンズシート及び光モジュール |
CN111512444A (zh) | 2017-12-28 | 2020-08-07 | 索尼半导体解决方案公司 | 相机封装件、相机封装件的制造方法以及电子设备 |
CN110391307A (zh) * | 2018-04-18 | 2019-10-29 | 苏州大学 | 一种InGaAs探测器与OLED结合的上转换器件的制备方法 |
WO2022202006A1 (ja) * | 2021-03-25 | 2022-09-29 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子及びその製造方法並びに撮像装置 |
JP2022176627A (ja) * | 2021-05-17 | 2022-11-30 | ソニーセミコンダクタソリューションズ株式会社 | 半導体チップおよびその製造方法、並びに電子機器 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244392A (ja) * | 1993-02-17 | 1994-09-02 | Sharp Corp | 固体撮像装置およびその製造方法 |
JPH0730082A (ja) | 1993-07-14 | 1995-01-31 | Nec Corp | 半導体基板へのモノリシックレンズ形成方法 |
JPH10209414A (ja) | 1997-01-22 | 1998-08-07 | Nikon Corp | 熱型赤外線イメージセンサ |
JPH11317475A (ja) * | 1998-02-27 | 1999-11-16 | Canon Inc | 半導体用封止材樹脂および半導体素子 |
JP2000307090A (ja) * | 1999-04-16 | 2000-11-02 | Toppan Printing Co Ltd | 固体撮像素子用マイクロレンズアレイ及びそれを用いた固体撮像素子並びにそれらの製造方法 |
JP2005268737A (ja) * | 2003-11-11 | 2005-09-29 | Ricoh Co Ltd | 光伝送素子モジュール |
JP2006019526A (ja) * | 2004-07-01 | 2006-01-19 | Ibiden Co Ltd | 光学素子、パッケージ基板および光通信用デバイス |
JP2007227546A (ja) * | 2006-02-22 | 2007-09-06 | Sumitomo Electric Ind Ltd | 光検出装置 |
JP2007256674A (ja) * | 2006-03-23 | 2007-10-04 | Fujifilm Corp | 光結合素子、光コネクタ、及び光伝送システム |
JP2009116056A (ja) | 2007-11-07 | 2009-05-28 | Sony Corp | レンズの製造方法および固体撮像装置の製造方法 |
JP2009283557A (ja) * | 2008-05-20 | 2009-12-03 | Sumitomo Electric Ind Ltd | 半導体光デバイスの製造方法 |
JP2010157667A (ja) * | 2009-01-05 | 2010-07-15 | Sumitomo Electric Ind Ltd | 検出装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02103962A (ja) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | 固体撮像装置及びその製造方法 |
JPH0653537A (ja) * | 1992-07-31 | 1994-02-25 | Japan Energy Corp | 半導体受光素子 |
JP2002289904A (ja) * | 2001-03-23 | 2002-10-04 | Sumitomo Electric Ind Ltd | 半導体受光素子とその製造方法 |
TWI278991B (en) * | 2002-07-09 | 2007-04-11 | Toppan Printing Co Ltd | Solid image-pickup device and method of manufacturing the same |
JP5042835B2 (ja) * | 2005-08-17 | 2012-10-03 | 出光興産株式会社 | 含フッ素アダマンタン誘導体、重合性基含有含フッ素アダマンタン誘導体及びそれを含有する樹脂組成物 |
JP5172584B2 (ja) * | 2008-10-07 | 2013-03-27 | 株式会社東芝 | 撮像装置 |
-
2011
- 2011-05-16 JP JP2011109658A patent/JP2012160691A/ja active Pending
-
2012
- 2012-01-07 WO PCT/JP2012/050213 patent/WO2012096239A1/ja active Application Filing
- 2012-01-07 EP EP12733894.5A patent/EP2665102A4/en not_active Withdrawn
- 2012-01-07 CN CN201280005421.2A patent/CN103329287B/zh active Active
- 2012-01-07 KR KR1020137017168A patent/KR20140001971A/ko not_active Application Discontinuation
- 2012-01-07 US US13/979,586 patent/US8809985B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244392A (ja) * | 1993-02-17 | 1994-09-02 | Sharp Corp | 固体撮像装置およびその製造方法 |
JPH0730082A (ja) | 1993-07-14 | 1995-01-31 | Nec Corp | 半導体基板へのモノリシックレンズ形成方法 |
JPH10209414A (ja) | 1997-01-22 | 1998-08-07 | Nikon Corp | 熱型赤外線イメージセンサ |
JPH11317475A (ja) * | 1998-02-27 | 1999-11-16 | Canon Inc | 半導体用封止材樹脂および半導体素子 |
JP2000307090A (ja) * | 1999-04-16 | 2000-11-02 | Toppan Printing Co Ltd | 固体撮像素子用マイクロレンズアレイ及びそれを用いた固体撮像素子並びにそれらの製造方法 |
JP2005268737A (ja) * | 2003-11-11 | 2005-09-29 | Ricoh Co Ltd | 光伝送素子モジュール |
JP2006019526A (ja) * | 2004-07-01 | 2006-01-19 | Ibiden Co Ltd | 光学素子、パッケージ基板および光通信用デバイス |
JP2007227546A (ja) * | 2006-02-22 | 2007-09-06 | Sumitomo Electric Ind Ltd | 光検出装置 |
JP2007256674A (ja) * | 2006-03-23 | 2007-10-04 | Fujifilm Corp | 光結合素子、光コネクタ、及び光伝送システム |
JP2009116056A (ja) | 2007-11-07 | 2009-05-28 | Sony Corp | レンズの製造方法および固体撮像装置の製造方法 |
JP2009283557A (ja) * | 2008-05-20 | 2009-12-03 | Sumitomo Electric Ind Ltd | 半導体光デバイスの製造方法 |
JP2010157667A (ja) * | 2009-01-05 | 2010-07-15 | Sumitomo Electric Ind Ltd | 検出装置およびその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2665102A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014188105A1 (fr) * | 2013-05-22 | 2014-11-27 | Electricite De France | Procédé de fabrication d'un dispositif photosensible |
FR3006108A1 (fr) * | 2013-05-22 | 2014-11-28 | Electricite De France | Procede de fabrication d'un dispositif photosensible |
CN105378944A (zh) * | 2013-05-22 | 2016-03-02 | 法国电力公司 | 构造光敏装置的方法 |
US9923106B2 (en) | 2013-05-22 | 2018-03-20 | Electricite De France | Method for fabricating a photosensitive device |
US9373733B2 (en) * | 2014-06-16 | 2016-06-21 | Sumitomo Electric Industries, Ltd. | Semiconductor light-receiving device and semiconductor light-receiving device array |
Also Published As
Publication number | Publication date |
---|---|
US20130292646A1 (en) | 2013-11-07 |
CN103329287B (zh) | 2015-11-25 |
JP2012160691A (ja) | 2012-08-23 |
EP2665102A4 (en) | 2018-04-04 |
US8809985B2 (en) | 2014-08-19 |
CN103329287A (zh) | 2013-09-25 |
EP2665102A1 (en) | 2013-11-20 |
KR20140001971A (ko) | 2014-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2012096239A1 (ja) | 受光装置、光学装置および受光装置の製造方法 | |
JP5185208B2 (ja) | フォトダイオード及びフォトダイオードアレイ | |
JP5568979B2 (ja) | 検出装置、受光素子アレイ、および検出装置の製造方法 | |
US20140319464A1 (en) | Light receiving element and method for manufacturing same | |
WO2010098224A1 (ja) | 半導体光検出素子 | |
JP5805680B2 (ja) | フォトダイオード及びフォトダイオードアレイ | |
KR20110128789A (ko) | 반도체 광 검출 소자 | |
JP2010098329A (ja) | フォトダイオードアレイ、その製造方法、及び放射線検出器 | |
US20110259407A1 (en) | Solar cell including microlens and method of fabricating the same | |
US10312390B2 (en) | Light receiving device and method of producing light receiving device | |
JP2016129225A (ja) | 半導体受光装置、半導体受光素子 | |
US11705469B2 (en) | Germanium based focal plane array for the short infrared spectral regime | |
US20110284981A1 (en) | Image sensor comprising microlens array, and manufacturing method thereof | |
JPWO2014045334A1 (ja) | 半導体受光素子及びその製造方法 | |
US20230197758A1 (en) | Photodetecting device with enhanced collection efficiency | |
JP2016066682A (ja) | 赤外線受光装置、半導体受光素子 | |
US20150364618A1 (en) | Semiconductor light-receiving device and semiconductor light-receiving device array | |
JP6790004B2 (ja) | 半導体受光素子およびその製造方法 | |
JP4094471B2 (ja) | 半導体受光装置 | |
JP2014110391A (ja) | 受光素子アレイ、その製造法、およびセンシング装置 | |
JPH04263475A (ja) | 半導体受光素子及びその製造方法 | |
JP2017168491A (ja) | 赤外線イメージセンサ、及び赤外線イメージセンサの製造方法 | |
JPH0290685A (ja) | 半導体受光素子 | |
JPH03152978A (ja) | 半導体受光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12733894 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20137017168 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13979586 Country of ref document: US Ref document number: 2012733894 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |