WO2012086728A1 - 気化器 - Google Patents
気化器 Download PDFInfo
- Publication number
- WO2012086728A1 WO2012086728A1 PCT/JP2011/079727 JP2011079727W WO2012086728A1 WO 2012086728 A1 WO2012086728 A1 WO 2012086728A1 JP 2011079727 W JP2011079727 W JP 2011079727W WO 2012086728 A1 WO2012086728 A1 WO 2012086728A1
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- WO
- WIPO (PCT)
- Prior art keywords
- vaporizer
- heater
- carrier gas
- film
- introduction
- Prior art date
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- 239000006200 vaporizer Substances 0.000 title claims abstract description 91
- 239000012159 carrier gas Substances 0.000 claims abstract description 43
- 230000008016 vaporization Effects 0.000 claims abstract description 27
- 238000009834 vaporization Methods 0.000 claims abstract description 25
- 239000011344 liquid material Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 abstract description 15
- 239000002245 particle Substances 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- -1 whereby ripples Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Definitions
- the present invention relates to a vaporizer that vaporizes a film forming liquid material contained in a carrier gas, and a film forming apparatus including the vaporizer.
- a carrier gas containing a liquid material for film formation is supplied to the vaporizer and is contained in the carrier gas in the vaporizer.
- a heater is disposed on the outer periphery of the vaporizer or on the outer periphery of the pipe for supplying the carrier gas into the vaporizer, and the film forming material contained in the carrier gas is vaporized by the heater heat.
- a liquid source is introduced into a carrier gas, and a liquid source refined to a micron order or less (1 micron or less) is dispersed in a carrier gas (hereinafter, a carrier gas in which a liquid source is dispersed is used as a source gas).
- the carrier gas flow rate is preferably set to 50 to 340 m / sec.
- ripples may occur on the surface of the film.
- the presence of particles is observed in the film or on the surface.
- the composition of the film may deviate from the target composition.
- the carbon content may increase.
- Patent Document 4 when forming an STO film, the temperature must be set to 300 ° C. or more in the vicinity of the joint portion with another device in the vicinity of the outlet of the vaporizer.
- the liquid raw material could not be vaporized. That is, it was necessary to set the temperature much higher than the theoretical temperature.
- Patent Document 5 describes a vaporizer for a thin film-forming liquid raw material in which the shape of the vaporizing portion has a shape that expands with respect to the gas input side, and a heater is disposed therein.
- Patent Document 4 when forming an STO film, the liquid raw material is vaporized unless the temperature is set to a temperature of 300 ° C. or more in the vicinity of the joint portion with another apparatus in the vicinity of the outlet of the vaporizer. I could not. That is, it was necessary to set the temperature much higher than the theoretical temperature. However, for example, when the joint portion is heated to 300 ° C., high heat resistance is required as an O-ring in the joint portion, and there is a problem that a metal ring may be inevitably used.
- An object of the present invention is to provide a vaporizer that can reduce the ripples, particles, and carbon in the film, and can supply a raw material that can form a film having a desired composition.
- An object of this invention is to provide the vaporizer which can fully vaporize, without requiring the heating more than necessary.
- the invention according to claim 1 includes a vaporizer body into which a carrier gas in which a film forming liquid material is dispersed is introduced, and a heater body disposed inside the vaporizer body.
- the heater main body is configured in the order of an introduction portion, a circumferential portion, and a discharge portion, and the shape of the introduction portion of the heater main body is a conical shape or a polygonal pyramid shape. It is.
- the inventor has conducted various experiments to investigate the cause of the problems of the prior art. As a result, an attempt was made to elucidate the above problem based on the knowledge that the liquid material dispersed in the carrier gas might be sent to the film formation chamber without being sufficiently vaporized.
- the invention according to claim 2 is the vaporizer according to claim 1, wherein the heater body is disposed on an extension line of the introduction portion of the carrier gas.
- the area of the introduction portion of the raw material gas into the vaporizer is 0.1 to 1 mm 2 , and the carrier gas in which the raw material solution is dispersed is introduced into the vaporizer from that portion.
- the flow velocity increases in the portion of the gas flow extension, and the time for receiving heat in the vaporizer decreases. Therefore, it is preferable to arrange the internal heater so as to be a shield for the path of the source gas.
- the invention according to claim 3 is the vaporizer according to claim 2, wherein the gas discharge part after vaporization is arranged on an extension shaft of the carrier gas introduction part.
- the length of the vaporizer (H in FIG. 1) varies depending on the film forming conditions, but generally has a size of 5 to 100 cm, or 10 to 50 cm. If the introduction of the raw material gas is performed at a high speed, there is a possibility that the material gas may flow from the introduction port to the exhaust port without receiving the heat necessary for vaporization. Therefore, the exhaust part is particularly effective when arranged on the extension shaft of the carrier gas introduction part.
- the passage cross-sectional area around the circumference of the portion where the heater is disposed inside is 0.8 to 1.2 of the passage cross-sectional area of the portion where there is no heater. It is a vaporizer of any one of thru
- the passage cross-sectional area around the conical shape of the introduction portion of the portion where the heater is disposed inside is 0 of the passage cross-sectional area of the portion where the heater is not present in the introduction portion of the heater body.
- S1 is preferably 0.8 to 1.2 with respect to S0. 0.9 to 1.1 is more preferable. In this range, it was confirmed that vaporization was performed instantaneously and the unreacted liquid raw material was drastically reduced.
- the passage cross-sectional area S1 the passage cross-sectional area of the portion where the heater is described in claim 4 is the passage cross-sectional area of the cylindrical periphery of the heater in FIG.
- the passage sectional area around the conical shape of the portion where the heater is present is the passage sectional area around the conical shape of the heater around the conical shape of the introduction portion of the heater.
- the internal heater it is preferable for the internal heater to provide a conical or polygonal cone-shaped inclined part on the raw material gas introduction part side in order to prevent turbulent flow. It is preferable that the cross-sectional area of the gas introduction part corresponding to this inclined part is also the same as S1. Therefore, the outer shape of the vaporizer is also formed with an inclined portion along the inclined portion of the internal heater. In addition, it is preferable to provide an inclination also on the discharge part side.
- the invention according to claim 6 is the vaporization according to any one of claims 1 to 4, wherein the carrier gas containing the liquid material for film formation is introduced into the vaporizer body at a speed of 50 m / sec to 350 m / sec. It is a vessel.
- the liquid material is cut, atomized as small particles (outer diameter 1 ⁇ m or less), and dispersed in the carrier gas, liquid in a carrier gas of 50 m / sec to 350 m / sec (especially subsonic (0.6 to 0.75 sonic)) It is preferable to introduce the raw material, and the vaporization rate can be greatly improved by applying the present invention under such conditions.
- the invention according to claim 7 is the vaporizer according to any one of claims 1 to 5, wherein means for cooling the introduction portion of the carrier gas is provided. Cooling the carrier gas passage, liquid source, source gas passage or source gas introduction portion (especially cooling to a temperature below the boiling point of the solvent) can prevent clogging in the introduction portion, but such cooling was performed. In particular, the present invention is effective.
- the invention according to claim 8 is the carburetor according to any one of claims 1 to 7, wherein a second heater is arranged on the discharge side outer periphery of the carburetor body. By disposing the second heater, the temperature difference in the vaporization path can be further reduced.
- the invention according to claim 9 is characterized in that the conical shape of the introduction part of the heater main body has a height / cone bottom diameter in the range of 0.5 to 1.
- the height / cone bottom diameter is less than 0.5, the conical shape becomes flat, which causes a problem of resistance to the flow of the carrier gas. If the diameter exceeds 1, the height of the conical shape becomes long, resulting in an increase in the length of the vaporizer device.
- a tenth aspect of the present invention is a film forming apparatus including the vaporizer according to any one of the first to ninth aspects.
- the vaporizer main body is formed in the vicinity of the carrier gas introduction port and expands in the carrier gas discharge direction, a trunk portion continuous to the introduction portion, and a carrier from the trunk portion
- the heater body is formed in the vicinity of the carrier gas introduction port and expands toward the carrier gas discharge direction, and is continuous with the introduction portion. It is preferable that the body portion and the discharge portion that contracts and shrinks from the body portion in the carrier gas discharge direction are integrally provided.
- each of the introduction portion, the circumferential portion, and the discharge portion of the vaporizer main body and the heater main body correspond to substantially the same position.
- the vaporizer main body and the heater main body have a substantially circular cross-sectional shape intersecting the carrier gas discharge direction, and their centers are arranged coaxially.
- a second heater may be arranged on the discharge side outer periphery of the vaporizer body.
- a vaporizer capable of supplying raw materials capable of reducing the amount of ripples, particles and carbon in the film and capable of forming a film having a desired composition. be able to. According to the vaporizer according to the eighth aspect, it is possible to provide a vaporizer capable of further reducing the temperature difference in the vaporization path.
- the film forming apparatus of the tenth aspect it is possible to provide a film forming apparatus capable of promoting the vaporization in the vaporizer and suppressing the occurrence of ripples during the film formation.
- the present invention can provide a vaporizer that can sufficiently perform vaporization without requiring heating more than necessary and that can facilitate temperature management.
- FIG. 2 is a cross-sectional view of the vaporizer according to the present invention of FIG. 1 taken along line AA. Explanatory drawing of the vaporizer
- FIG. 1 is an explanatory diagram of a vaporizer according to an embodiment of the present invention
- FIG. 2 is an AA sectional view of the vaporizer of the present invention of FIG. 1
- FIG. 3 is a vaporizer according to another embodiment of the present invention. It is explanatory drawing of.
- the vaporizer 1 As shown in FIG. 1, the vaporizer 1 according to the embodiment of the present invention is supplied with a carrier gas containing a film-forming liquid material from the upper side as shown by an arrow A, as shown by an arrow B.
- the carrier gas vaporized in the outermost membrane chamber or the like is discharged by discharging the mist downward in the figure.
- a plurality of film-forming liquid materials can be charged into the vaporizer 1 (see arrows C and D), or these can be switched and switched.
- the vaporizer 1 is disposed in the upper part of the drawing and is disposed in the vaporizer body 3, the pipe connection part 2 for introducing the carrier gas described above, the vaporizer body 3 connected to the pipe connection part 2, and the vaporizer body 3.
- the heater body 4 is provided.
- the lower portion of the vaporizer body 3 in the figure is optional depending on the purpose of use, such as connecting a pipe connection portion similar to the pipe connection portion 2 to SH or connecting a film forming apparatus (chamber).
- the vaporizer main body 3 is divided into upper and lower parts in the figure, and has a substantially circular shape in cross section (horizontal cross section) as shown in FIG. Further, the vaporizer main body 3 includes an introduction portion 3a that expands in a conical or polygonal pyramid shape downward from the pipe connection portion 2, a circumferential portion (body portion) 3b that continues to the introduction portion 3a, and a downward direction in the drawing. And a discharge portion 3c that is closed and closed into a conical or polygonal pyramid shape.
- the heater body 4 is divided into upper and lower parts in the figure and has a substantially circular shape in cross section (horizontal cross section) as shown in FIG.
- the vaporization path 5 formed by the inside of the vaporizer body 3 and the outer periphery of the heater body 4 is equally divided. And uniform vaporization can be performed.
- the vaporizer main body 3 is located on the pipe connection portion 2 side and expands in a conical shape downward in the figure, a cylindrical part (body part) 4b continuous to the introduction part 4a, and downward in the figure. And a discharge portion 4c that contracts and closes in a conical shape.
- the heater body 4 may generate heat directly or may be internally heated. At this time, the heater body 4 can directly control the temperature in the vaporization path 5 by setting the surface temperature, and the carrier gas is discharged downward while being in direct contact with the heater body 4. Gas can be vaporized efficiently.
- the heater main body 4 includes a vaporizer main body introduction portion 3a, a heater main body introduction portion 4a, a vaporizer main body cylindrical portion 3b, a heater main body cylindrical portion 4b, and a vaporizer main body discharge portion. 3c and the discharge part 4c of the heater body are configured to correspond to substantially the same position.
- the heater main body 4 sets a path length L in the vicinity of the introduction portion 3a of the vaporizer main body in the vaporization path 5 by a distance (for example, 5 cm) at which the carrier gas (mist) is diffused and flattened. It can vaporize more uniformly.
- the temperature in the vaporization path 5 is, for example, about 290 ° C. in the vicinity of the introduction portion 3a ( ⁇ path length L) of the vaporizer body, and about 270 ° C. in the subsequent vaporization path with a low temperature difference. 5 can be formed.
- FIG. 3 is an explanatory view of a vaporizer according to another embodiment of the present invention, and is an example in which a second heater 6 is disposed on the discharge-side outer periphery of the vaporizer body 3.
- the carrier gas (mist) supplied from the pipe connection part 2 into the vaporization path 5 passes through the vicinity of the outer periphery of the cylindrical part 4b of the heater body while being diffused by the introduction part 4a of the heater body. At the discharge section 4c.
- the path length of the vaporization path 5 can be set longer than the length H of the vaporizer body 3, and the residence time of the carrier gas is ensured long while the vaporizer body 3 is downsized.
- sufficient vaporization of the carrier gas can be realized.
- the vaporization chamber is formed at a temperature of 250 ° C., and the joint portion between the vaporizer and another apparatus (for example, the film formation apparatus) is also 250 ° C.
- the ripples, particles, and carbon amount in the film were significantly reduced, and the deviation from the desired composition could be reduced.
- An STO film (film A) was formed with the shape of the heater part (introduction part) on the entrance side of the vaporization chamber as a cone.
- the height / cone base diameter was set to 0.6.
- the passage cross-sectional area around the circumference is the same as the passage cross-sectional area of the portion without the heater.
- the STO film (film B) was formed in the same manner with the heater introduction part being a cylinder.
- the deviation from the stoichiometric ratio of SrTiO3 was less than half that in film B.
- the film A and the film B both had a particle number and a carbon amount of 1 ⁇ 4 or less.
- the vaporizer which can improve the vaporization effect inside and can make temperature control easy can be provided, and the performance improvement of the film-forming apparatus using this vaporizer can be provided. Can be realized.
Abstract
Description
また、特許文献4には、キャリアガスに液体原料を導入し、ミクロンオーダー以下(1ミクロン以下)に微細化した液体原料をキャリアガスに分散させ(以下、液体原料が分散したキャリアガスを原料ガスという。)、この原料ガスを気化器に導入して気化させた後、成膜室において成膜する技術が開示されている。その際、溶媒のみが気化してしまい、出口の目詰まりが発生することを防止すること等を目的として、出口を冷却するための手段を設けてある。また、液体原料をより小さな粒子としてキャリアガス中に分散させるためにキャリアガスの流速は50~340m/secが好適な条件として用いられている。
しかし、上記技術により成膜を行うと、膜の表面に波紋が生じてしまうことがある。また、膜中あるいは表面にパーティクルの存在が認められる。さらに、膜の組成が目標とする組成からずれてしまうことがある。また、カーボン含有量が多くなることがある。
さらに、特許文献4記載の記述においては、例えば、STO膜を成膜する場合、気化器の出口近傍における他の装置との継ぎ手部近傍において温度を300℃以上の温度に設定してあかなければ液体原料を気化することができなかった。すなわち、理論上の温度よりはるかに高い温度に設定する必要があった。しかし、例えば、継ぎ手部を300℃に加熱する場合、継ぎ手部におけるOリングとして高い耐熱性が要求されることとなり、メタルリングを使用せざるを得ない場合も生じていた。
特許文献5には、気化部の形状が、ガスの入力側に対して、拡がりを持つ形状であって、内部にヒータを配置した薄膜成膜液体原料用気化器について記載されている。
特許文献5では、気化部の形状が、ガスの入力側に対して、拡がりを持つ形状であるために、ガスの流れが、凹湾の形状の部分で停滞する、あるいは気流の乱れにより噴流に偏りが生じ、十分な気化が困難となり、また、凹湾の形状部分に付着物が蓄積し、パーティクルの発生などの問題点があった。
本発明は、膜における、波紋、パーティクル、カーボン量を減少させることができ、しかも所望の組成を有する膜を形成することができる原料供給可能な気化器を提供することを目的とする。
また、このような気化器を用いることにより、気化器内での気化を促進して、成膜時の波紋の発生等を抑制することができる成膜装置を提供することを目的とする。
本発明は、必要以上の加熱を要することなく気化を十分に行うことが可能な気化器を提供することを目的とする。
本発明者は、従来技術が有する問題の原因について各種実験を重ねて探求した。その結果、キャリアガス中に分散した液体材料が十分気化されないまま成膜室に送り込まれてしまうことに原因があるのではないかとの知見を抱き上記問題の解明を試みた。その結果、加熱温度を単純に高くしただけでは、必ずしも未気化を防止することはできないことを実験により確認した。また、温度を高くすることは継ぎ手部などへの悪影響を与える。
各種実験を重ねる中で、液体原料が分散したキャリアガスの通路にヒータを配置しておくと上記問題点が一気に解決できることを偶然見出し、本発明をなすに到ったものである。
原料ガスの気化器内への導入部における面積は、0.1~1mm2であり、その部分から原料溶液が分散したキャリアガスが気化器内に導入される。そのガスの流れの延長線上の部分で流速が大きくなり、気化器内において熱を受領する時間が短くなる。そこで、原料ガスの通路の遮蔽物となるように内部ヒータを配置することが好ましい。
気化器の長さは(図1におけるH)は、成膜条件によっても変動するが、一般的には、5~100cm、あるいは10~50cmの寸法を有している。原料ガスの導入が高速で行われると、気化に必要な熱を受領することなく一気に導入口から排気口まで流れてしまうおそれがある。従って、排気部は、前記キャリアガスの導入部の延長軸上に配置されている場合に特に有効である。
また、請求項5に係る発明は、前記内部に配置されたヒータがある部分の導入部の円錐形状周辺の通路断面積は、前記ヒータ本体の導入部におけるヒータが無い部分の通路断面積の0.8~1.2であることを特徴とする請求項1乃至3のいずれか1項記載の気化器である。
図1におけるS0で示した部分の断面積と、内部ヒータ4が配置された部分における通路断面積S1との関係として、S1は、S0に対して0.8~1.2とすることが好ましく、0.9~1.1とすることがより好ましい。この範囲とした場合には、気化は瞬間的に行われ、未反応の液体原料は激減することが確認された。
なお、通路断面積S1に関して、請求項4に記載した、ヒータがある部分の通路断面積は、図1にて、ヒータが円筒状の周辺の通路断面積であり、請求項5に記載した、ヒータがある部分の前記円錐形状周辺の通路断面積は、ヒータの導入部の円錐形状周辺のヒータが円錐状の周辺の通路断面積である。
また、内部ヒータは、原料ガス導入部側に円錐又は多角錐形状の傾斜部を設けておくことが乱流防止の上好ましい。この傾斜部に対応するガス導入部の断面積もS1と同じとすることが好ましい。
従って、気化器の外形も、内部ヒータの傾斜部に沿って傾斜部が形成される。なお、排出部側にも傾斜を設けることが好ましい。
液体原料を裁断し、小さな粒子(外径1μm以下)として霧化し、キャリアガス中に分散させるために、50m/sec~350m/sec(特に亜音速(音速の0.6~0.75)のキャリアガスに液体原料を導入することが好適に使用されるのが好ましい。かかる条件の場合において本発明を適用すると気化率を大幅に向上させることが可能となる。
キャリアガスの通路、液体原料、原料ガスの通路乃至原料ガスの導入部を冷却(特に溶媒の沸点以下の温度への冷却)することにより導入部における目詰まりを防止できるが、かかる冷却を行った場合に特に本発明は有効である。
請求項8に係る発明は、前記気化器本体の排出側外周に第2のヒータが配置されたことを特徴とする請求項1乃至7のいずれか1項記載の気化器である。
前記第2のヒータを配置することによって、気化路での温度差を、更に縮小することが可能となる。
請求項10に係る発明は、請求項1乃至9のいずれか1項記載の気化器を備えていることを特徴とする成膜装置である。
請求項8による気化器によれば、気化路での温度差を、更に縮小することが可能となる気化器を提供することができる。
本発明は、必要以上の加熱を要することなく気化を十分に行うことが可能な、しかも、温度管理を容易とすることができる気化器を提供することができる。
2 配管接続部
3 気化器本体
3a 導入部
3b 円筒部
3c 排出部
4 ヒータ本体
4a 導入部
4b 円周部
4c 排出部
5 気化路
6 第2のヒータ
図1は、本発明の一実施の形態による気化器の説明図、図2は、図1の本発明の気化器のAA断面図、図3は、本発明の他の実施の形態による気化器の説明図である。
尚、図1に示すように、気化器1へは、複数の成膜用液体材料を投入(矢印C、D参照)することも可能であるし、これらを切り替え投入することも可能である。
図3は、本発明の他の実施の形態による気化器の説明図であり、気化器本体3の排出側外周に第2のヒータ6を配置した例である。
本発明では、例えば、STOの成膜に際して、気化室内を250℃として成膜を行ったところ、気化器と他の装置(例えば、成膜装置)との継ぎ手部も250℃であり、その条件でも膜における波紋、パーティクル、カーボン量は著しく減少しており、しかも所望の組成に対するずれを小さくすることができた。
なお、本例では、高さ/円錐の底辺直径を、0.6とした。
本例では、円周部周辺の通路断面積は、ヒータが無い部分の通路断面積 と同じとした。
一方、ヒータの導入部を円柱として同様にSTO膜(膜B)を形成した。
膜Aにおいては、SrTiO3の化学量論比からのずれは、膜Bにおけるそれの半分以下であった。
また、膜Aは膜Bに対して、パーティクル数、カーボン量ともに1/4以下であった。
円周部周辺の通路断面積がヒータが無い部分の通路断面積の0.8~1.2とした場合には、 0.8未満、1.2を超えた場合に比べて、本発明効果はより優れていた。
Claims (10)
- 成膜用液体材料が分散しているキャリアガスが導入される気化器本体と、該気化器本体の
内部に配置されたヒータ本体とを備えていることを特徴とする気化器であって、前記ヒータ本体は、導入部、円周部、排出部の順に構成され、
前記ヒータ本体の導入部の形状が、円錐又は多角錐形状であることを特徴とする気化器。 - 前記ヒータ本体は、キャリアガスの導入部の延長軸上に配置されていることを特徴とする請求項1記載の気化器。
- 気化後のガスの排出部は、前記キャリアガスの導入部の延長軸上に配置されていることを特徴とする請求項1または2記載の気化器。
- 前記内部に配置されたヒータがある部分の円周部周辺の通路断面積は、ヒータが無い部分の通路断面積の0.8~1.2であることを特徴とする請求項1乃至3のいずれか1項記載の気化器。
- 前記内部に配置されたヒータがある部分の導入部の円錐形状周辺の通路断面積は、前記ヒータ本体の導入部におけるヒータが無い部分の通路断面積の0.8~1.2であることを特徴とする請求項1乃至3のいずれか1項記載の気化器。
- 成膜用液体材料を含むキャリアガスは、50m/sec~350m/secの速度で気化器本体に導
入されることを特徴とする請求項1乃至5のいずれか1項記載の気化器。 - キャリアガスの導入部を冷却するための手段を設けてあることを特徴とする請求項1乃至6のいずれか1項記載の気化器。
- 前記気化器本体の排出側外周に、第2のヒータが配置されたことを特徴とする請求項1乃至7のいずれか1項記載の気化器。
- 前記ヒータ本体の導入部の円錐形状は、高さ/円錐底部の直径は、0.5~1の範囲であることを特徴とする請求項1乃至8のいずれか1項記載の気化器。
- 請求項1乃至9のいずれか1項記載の気化器を備えていることを特徴とする成膜装置。
Priority Applications (6)
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JP2012549861A JP6013917B2 (ja) | 2010-12-21 | 2011-12-21 | 気化器及び気化方法 |
US13/991,756 US20130291797A1 (en) | 2010-12-21 | 2011-12-21 | Vaporizer |
KR1020137017445A KR101881617B1 (ko) | 2010-12-21 | 2011-12-21 | 기화기 |
CN201180062075.7A CN103380486B (zh) | 2010-12-21 | 2011-12-21 | 汽化器 |
EP11849995.3A EP2657957B1 (en) | 2010-12-21 | 2011-12-21 | Vaporizer |
KR1020177037722A KR20180005266A (ko) | 2010-12-21 | 2011-12-21 | 기화기 |
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JP2010284916 | 2010-12-21 | ||
JP2010-284916 | 2010-12-21 |
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WO2012086728A1 true WO2012086728A1 (ja) | 2012-06-28 |
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PCT/JP2011/079727 WO2012086728A1 (ja) | 2010-12-21 | 2011-12-21 | 気化器 |
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US (1) | US20130291797A1 (ja) |
EP (1) | EP2657957B1 (ja) |
JP (2) | JP6013917B2 (ja) |
KR (2) | KR20180005266A (ja) |
CN (1) | CN103380486B (ja) |
WO (1) | WO2012086728A1 (ja) |
Cited By (1)
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US10066295B2 (en) * | 2012-03-28 | 2018-09-04 | Unitex Co., Ltd. | Source container and vapour-deposition reactor |
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JPWO2012086728A1 (ja) | 2014-06-05 |
JP6013917B2 (ja) | 2016-10-25 |
CN103380486A (zh) | 2013-10-30 |
JP2016195273A (ja) | 2016-11-17 |
KR101881617B1 (ko) | 2018-07-24 |
CN103380486B (zh) | 2016-08-10 |
EP2657957A4 (en) | 2014-05-28 |
KR20140034123A (ko) | 2014-03-19 |
JP6313820B2 (ja) | 2018-04-18 |
EP2657957B1 (en) | 2020-03-11 |
KR20180005266A (ko) | 2018-01-15 |
EP2657957A1 (en) | 2013-10-30 |
US20130291797A1 (en) | 2013-11-07 |
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