WO2012036499A3 - 박막 증착 장치 - Google Patents

박막 증착 장치 Download PDF

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Publication number
WO2012036499A3
WO2012036499A3 PCT/KR2011/006843 KR2011006843W WO2012036499A3 WO 2012036499 A3 WO2012036499 A3 WO 2012036499A3 KR 2011006843 W KR2011006843 W KR 2011006843W WO 2012036499 A3 WO2012036499 A3 WO 2012036499A3
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WO
WIPO (PCT)
Prior art keywords
susceptor
support
supply part
gas supply
source
Prior art date
Application number
PCT/KR2011/006843
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English (en)
French (fr)
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WO2012036499A2 (ko
Inventor
김진호
Original Assignee
주식회사 원익아이피에스
박상준
손병국
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100091853A external-priority patent/KR20120029795A/ko
Priority claimed from KR1020100091852A external-priority patent/KR20120029794A/ko
Application filed by 주식회사 원익아이피에스, 박상준, 손병국 filed Critical 주식회사 원익아이피에스
Priority to JP2013529066A priority Critical patent/JP5710002B2/ja
Priority to CN201180044766.4A priority patent/CN103140914B/zh
Priority to US13/823,846 priority patent/US20130180454A1/en
Publication of WO2012036499A2 publication Critical patent/WO2012036499A2/ko
Publication of WO2012036499A3 publication Critical patent/WO2012036499A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

박막 증착 장치는 챔버와, 서셉터와, 소스가스 공급부, 및 서셉터 지지대를 포함한다. 챔버는 증착 공정이 행해지는 내부 공간을 갖는다. 서셉터는 챔버 내에 배치되며, 상면에 중심 둘레를 따라 복수의 기판들을 직접적으로 지지하거나, 하나 이상의 기판이 배치되어 있는 기판 홀더를 지지한다. 소스가스 공급부는 서셉터의 상부 중앙으로 제1,2 소스가스를 분리된 상태로 공급되며, 상하로 배열된 소스가스 분사구들을 통해 분리된 제1,2 소스가스를 서셉터 주변을 향해 각각 분사하여 서셉터 상의 기판들에 제1,2 소스가스를 공급한다. 서셉터 지지대는 서셉터의 하측에서 서셉터의 중앙을 받치도록 설치되며, 챔버의 외부로부터 도입된 추가가스를 서셉터의 상면으로 분사하는 추가가스 공급부를 구비한다.
PCT/KR2011/006843 2010-09-17 2011-09-16 박막 증착 장치 WO2012036499A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013529066A JP5710002B2 (ja) 2010-09-17 2011-09-16 薄膜蒸着装置
CN201180044766.4A CN103140914B (zh) 2010-09-17 2011-09-16 薄膜蒸镀装置
US13/823,846 US20130180454A1 (en) 2010-09-17 2011-09-16 Thin film deposition apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0091852 2010-09-17
KR1020100091853A KR20120029795A (ko) 2010-09-17 2010-09-17 박막 증착 장치
KR1020100091852A KR20120029794A (ko) 2010-09-17 2010-09-17 박막 증착 장치
KR10-2010-0091853 2010-09-17

Publications (2)

Publication Number Publication Date
WO2012036499A2 WO2012036499A2 (ko) 2012-03-22
WO2012036499A3 true WO2012036499A3 (ko) 2012-06-28

Family

ID=45832119

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006843 WO2012036499A2 (ko) 2010-09-17 2011-09-16 박막 증착 장치

Country Status (5)

Country Link
US (1) US20130180454A1 (ko)
JP (1) JP5710002B2 (ko)
CN (1) CN103140914B (ko)
TW (1) TWI487803B (ko)
WO (1) WO2012036499A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480417B (zh) 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
TWI473903B (zh) * 2013-02-23 2015-02-21 Hermes Epitek Corp 應用於半導體設備的噴射器與上蓋板總成
CN104099584B (zh) * 2013-04-10 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及等离子体加工设备
KR101980313B1 (ko) 2014-01-24 2019-05-20 주식회사 원익아이피에스 기판 처리 장치
CN106663604B (zh) * 2014-07-03 2021-01-26 应用材料公司 旋转批量外延系统
KR102350588B1 (ko) 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
TWI612176B (zh) * 2016-11-01 2018-01-21 漢民科技股份有限公司 應用於沉積系統的氣體分配裝置
JP7002268B2 (ja) * 2017-09-28 2022-01-20 東京エレクトロン株式会社 プラズマ処理装置
US11139149B2 (en) * 2017-11-29 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Gas injector
CN111254383B (zh) * 2020-03-25 2020-09-25 上海陛通半导体能源科技股份有限公司 用于改善反应溅射膜层均匀性的物理气相沉积设备
CN111996511A (zh) * 2020-08-10 2020-11-27 长江存储科技有限责任公司 化学气相沉积装置以及氮化钨薄膜的沉积方法
DE102022132776A1 (de) * 2022-12-09 2024-06-20 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von SiC-Schichten auf einem Substrat
WO2024121230A1 (de) * 2022-12-09 2024-06-13 Aixtron Se VORRICHTUNG ZUM ABSCHEIDEN VON SiC-SCHICHTEN AUF EINEM SUBSTRAT MIT EINEM VERSTELLBAREN GASAUSTRITTSELEMENT

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JP2002359204A (ja) * 2001-05-17 2002-12-13 Hanbekku Co Ltd 化合物半導体製造用水平反応炉
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359204A (ja) * 2001-05-17 2002-12-13 Hanbekku Co Ltd 化合物半導体製造用水平反応炉
KR20060095276A (ko) * 2005-02-28 2006-08-31 삼성전기주식회사 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법
KR100980397B1 (ko) * 2010-05-24 2010-09-07 주식회사 시스넥스 유기금속가스의 농도분포조절이 가능한 화학기상증착반응기

Also Published As

Publication number Publication date
JP2013538463A (ja) 2013-10-10
TWI487803B (zh) 2015-06-11
CN103140914A (zh) 2013-06-05
CN103140914B (zh) 2015-10-14
JP5710002B2 (ja) 2015-04-30
TW201213570A (en) 2012-04-01
WO2012036499A2 (ko) 2012-03-22
US20130180454A1 (en) 2013-07-18

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