CN103140914B - 薄膜蒸镀装置 - Google Patents
薄膜蒸镀装置 Download PDFInfo
- Publication number
- CN103140914B CN103140914B CN201180044766.4A CN201180044766A CN103140914B CN 103140914 B CN103140914 B CN 103140914B CN 201180044766 A CN201180044766 A CN 201180044766A CN 103140914 B CN103140914 B CN 103140914B
- Authority
- CN
- China
- Prior art keywords
- gas
- pedestal
- source gas
- source
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 46
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 156
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000008020 evaporation Effects 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims abstract description 31
- 239000007921 spray Substances 0.000 claims abstract description 27
- 230000008676 import Effects 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 359
- 238000002347 injection Methods 0.000 claims description 22
- 239000007924 injection Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005507 spraying Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0091853 | 2010-09-17 | ||
KR1020100091853A KR20120029795A (ko) | 2010-09-17 | 2010-09-17 | 박막 증착 장치 |
KR1020100091852A KR20120029794A (ko) | 2010-09-17 | 2010-09-17 | 박막 증착 장치 |
KR10-2010-0091852 | 2010-09-17 | ||
PCT/KR2011/006843 WO2012036499A2 (ko) | 2010-09-17 | 2011-09-16 | 박막 증착 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103140914A CN103140914A (zh) | 2013-06-05 |
CN103140914B true CN103140914B (zh) | 2015-10-14 |
Family
ID=45832119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180044766.4A Expired - Fee Related CN103140914B (zh) | 2010-09-17 | 2011-09-16 | 薄膜蒸镀装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130180454A1 (zh) |
JP (1) | JP5710002B2 (zh) |
CN (1) | CN103140914B (zh) |
TW (1) | TWI487803B (zh) |
WO (1) | WO2012036499A2 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI480417B (zh) | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
TWI473903B (zh) * | 2013-02-23 | 2015-02-21 | Hermes Epitek Corp | 應用於半導體設備的噴射器與上蓋板總成 |
CN104099584B (zh) * | 2013-04-10 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种反应腔室及等离子体加工设备 |
KR101980313B1 (ko) | 2014-01-24 | 2019-05-20 | 주식회사 원익아이피에스 | 기판 처리 장치 |
CN106663604B (zh) * | 2014-07-03 | 2021-01-26 | 应用材料公司 | 旋转批量外延系统 |
KR102350588B1 (ko) | 2015-07-07 | 2022-01-14 | 삼성전자 주식회사 | 인젝터를 갖는 박막 형성 장치 |
TWI612176B (zh) * | 2016-11-01 | 2018-01-21 | 漢民科技股份有限公司 | 應用於沉積系統的氣體分配裝置 |
JP7002268B2 (ja) * | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11139149B2 (en) | 2017-11-29 | 2021-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas injector |
CN111254383B (zh) * | 2020-03-25 | 2020-09-25 | 上海陛通半导体能源科技股份有限公司 | 用于改善反应溅射膜层均匀性的物理气相沉积设备 |
CN111996511A (zh) * | 2020-08-10 | 2020-11-27 | 长江存储科技有限责任公司 | 化学气相沉积装置以及氮化钨薄膜的沉积方法 |
WO2024121230A1 (de) * | 2022-12-09 | 2024-06-13 | Aixtron Se | VORRICHTUNG ZUM ABSCHEIDEN VON SiC-SCHICHTEN AUF EINEM SUBSTRAT MIT EINEM VERSTELLBAREN GASAUSTRITTSELEMENT |
DE102022132776A1 (de) * | 2022-12-09 | 2024-06-20 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von SiC-Schichten auf einem Substrat |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1386898A (zh) * | 2001-05-17 | 2002-12-25 | 汉沃克有限公司 | 化合物半导体制造用的水平反应炉 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246192A (ja) * | 1996-03-05 | 1997-09-19 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
JP4423011B2 (ja) * | 2003-06-23 | 2010-03-03 | 日本碍子株式会社 | 高比抵抗GaN層を含む窒化物膜の製造方法 |
JP2005228757A (ja) * | 2004-02-10 | 2005-08-25 | Japan Pionics Co Ltd | 気相成長装置及び気相成長方法 |
KR100631972B1 (ko) * | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법 |
JP4945185B2 (ja) * | 2006-07-24 | 2012-06-06 | 株式会社東芝 | 結晶成長方法 |
US8465802B2 (en) * | 2008-07-17 | 2013-06-18 | Gang Li | Chemical vapor deposition reactor and method |
KR100980397B1 (ko) * | 2010-05-24 | 2010-09-07 | 주식회사 시스넥스 | 유기금속가스의 농도분포조절이 가능한 화학기상증착반응기 |
-
2011
- 2011-09-16 TW TW100133418A patent/TWI487803B/zh not_active IP Right Cessation
- 2011-09-16 CN CN201180044766.4A patent/CN103140914B/zh not_active Expired - Fee Related
- 2011-09-16 US US13/823,846 patent/US20130180454A1/en not_active Abandoned
- 2011-09-16 WO PCT/KR2011/006843 patent/WO2012036499A2/ko active Application Filing
- 2011-09-16 JP JP2013529066A patent/JP5710002B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1386898A (zh) * | 2001-05-17 | 2002-12-25 | 汉沃克有限公司 | 化合物半导体制造用的水平反应炉 |
Also Published As
Publication number | Publication date |
---|---|
TW201213570A (en) | 2012-04-01 |
JP5710002B2 (ja) | 2015-04-30 |
JP2013538463A (ja) | 2013-10-10 |
WO2012036499A2 (ko) | 2012-03-22 |
TWI487803B (zh) | 2015-06-11 |
CN103140914A (zh) | 2013-06-05 |
WO2012036499A3 (ko) | 2012-06-28 |
US20130180454A1 (en) | 2013-07-18 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160725 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151014 Termination date: 20210916 |
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CF01 | Termination of patent right due to non-payment of annual fee |