WO2012029250A1 - Dispositif de conversion photoélectrique empilé en parallèle, et dispositif de conversion photoélectrique intégré en série - Google Patents

Dispositif de conversion photoélectrique empilé en parallèle, et dispositif de conversion photoélectrique intégré en série Download PDF

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WO2012029250A1
WO2012029250A1 PCT/JP2011/004679 JP2011004679W WO2012029250A1 WO 2012029250 A1 WO2012029250 A1 WO 2012029250A1 JP 2011004679 W JP2011004679 W JP 2011004679W WO 2012029250 A1 WO2012029250 A1 WO 2012029250A1
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photoelectric conversion
optical adjustment
parallel
conversion unit
adjustment layer
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PCT/JP2011/004679
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English (en)
Japanese (ja)
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恒 宇津
満 市川
崇 口山
玄介 小泉
山本　憲治
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株式会社カネカ
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Priority to JP2012531674A priority Critical patent/JP5905824B2/ja
Publication of WO2012029250A1 publication Critical patent/WO2012029250A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a parallel photoelectric conversion stacked device in which an optical adjustment layer is introduced between photoelectric conversion units electrically connected in series and in parallel, and a series integrated photoelectric conversion apparatus using the parallel photoelectric conversion stacked device.
  • crystalline silicon thin-film solar cells have also been developed as thin-film silicon solar cells. It has become.
  • the silicon thin film solar cell described above is amorphous when the i-type photoelectric conversion layer is amorphous regardless of whether the p-type and n-type conductive layers included therein are amorphous or crystalline.
  • a crystalline silicon thin film solar cell is referred to as a crystalline silicon thin film solar cell.
  • the term “crystalline” in the present application includes those partially including an amorphous state as commonly used in the technical field of thin film solar cell elements.
  • Patent Document 1 discloses a high short-circuit current value by connecting silicon-based and CIS-based thin-film photoelectric conversion units in series.
  • two silicon-based thin-film photoelectric conversion units and a CIS-based thin film are provided in the multi-junction thin-film photoelectric conversion device.
  • a photoelectric conversion unit is provided, and these are connected in series via an intermediate layer.
  • the silicon-based thin film photoelectric conversion device is capable of photoelectric conversion of near-infrared light of 1100 nm or more, which is difficult to perform photoelectric conversion, and can use a wide range of solar spectrum. It is disclosed that a conversion device can be provided.
  • the present invention relates to a solar cell element in which photoelectric conversion units are electrically connected in series and in parallel.
  • a high-efficiency solar cell element in which light absorption amount in each photoelectric conversion unit is appropriately distributed. The purpose is to provide.
  • the parallel photoelectric conversion laminated device of the present invention has a specific optical adjustment layer and a series-parallel structure, and has the following configuration.
  • a plurality of stacked serial elements are parallel photoelectric conversion stacked devices electrically connected in parallel, the serial elements including one or more photoelectric conversion units, and between at least two adjacent serial elements.
  • An optical adjustment layer the optical adjustment layer has reflection wavelength selectivity and transmission wavelength selectivity, and the reflection wavelength selected by the reflection wavelength selectivity is greater than the series on the light incident side from the optical adjustment layer.
  • the wavelength selected within the spectral sensitivity range of the element, and the transmission wavelength selected by the transmission wavelength selectivity is selected within the spectral sensitivity range of all photoelectric conversion units on the back side of the optical adjustment layer. It is related with the parallel photoelectric conversion laminated device characterized by having.
  • the reflectance of the reflected light selected by the reflection wavelength selectivity in the optical adjustment layer is 80% or more, and the transmittance of the transmitted light selected by the transmission wavelength selectivity is 90% or more. It is related with the said parallel photoelectric conversion laminated device characterized.
  • the present invention relates to the parallel photoelectric conversion laminated device, wherein a transparent conductive film is formed on both the light incident surface side and the back surface side of the optical adjustment layer.
  • a serial element composed of an amorphous silicon photoelectric conversion unit and a serial element composed of a crystalline silicon photoelectric conversion unit and a compound photoelectric conversion unit are electrically connected in parallel. It is related with the said parallel photoelectric conversion laminated device.
  • the present invention relates to a series integrated photoelectric conversion device, wherein the parallel photoelectric conversion stacked devices are electrically connected in series.
  • the present invention it is not necessary to align the current values of the photoelectric conversion units by using a specific series-parallel structure, and furthermore, by introducing a specific optical adjustment layer, the amount of light absorption in each photoelectric conversion unit is appropriately It is possible to provide a parallel photoelectric conversion laminated device that is distributed and has improved conversion efficiency compared to the conventional product, and a series integrated photoelectric conversion device thereof.
  • FIG. 1A a photoelectric conversion stacked device (hereinafter referred to as a parallel photoelectric conversion stacked device) in which photoelectric conversion units are electrically connected in series and in parallel will be schematically described with reference to FIG.
  • the photoelectric conversion units 1a to 1f are arranged in order of increasing band gap from the light incident surface, and each photoelectric conversion unit is grouped into the following three series elements.
  • the series photoelectric conversion units to be configured are selected so that all three series elements have substantially the same open circuit voltage, and these three series elements are electrically connected in parallel.
  • a conversion layered device has been formed.
  • the wiring in a figure typically represents that it is connected in parallel, it is preferable to actually connect electrically using a thin film.
  • a photoelectric conversion stacked device including three series elements is shown as an example.
  • at least one series element in which a plurality of photoelectric conversion units are electrically connected in series is provided.
  • the number of series elements and the configuration of the photoelectric conversion unit included in the series elements may be any.
  • each series element may be p-incidence or n-incidence with respect to the light incident surface, and may be different for each series element (in FIG. 1A, in all series elements). The case is shown in the figure).
  • the photoelectric conversion units are arranged in order of increasing band gap from the light incident surface side, so that the series elements formed by serial connection go to the back side, and the band of the photoelectric conversion unit that is a constituent element The gap becomes narrower and the open circuit voltage of each photoelectric conversion unit becomes lower. For this reason, the number of photoelectric conversion units to be configured increases as the series element on the back surface side.
  • the open circuit voltage of each series element is substantially the same, and the current value that can be taken out of each series element is obtained by dividing the amount of current generated by the light incident on the series element by the number of photoelectric conversion unit cells included. Therefore, it is advantageous to generate power with a series element having a smaller number of photoelectric conversion units. This is simply equivalent to higher efficiency when power is generated by a photoelectric conversion unit having a higher voltage.
  • FIG. 2 a schematic diagram of a series-parallel solar cell having an optical adjustment layer according to the present invention is shown in FIG.
  • the optical adjustment layer preferably has high wavelength selectivity that transmits light on the long wavelength side and reflects short wavelength light.
  • the wavelength selectivity mentioned here means reflection and transmission in the solar cell, and the design must be performed not on the air but on the layer adjacent to the optical adjustment layer.
  • the long wavelength light transmitted through the optical adjustment layer may be up to the wavelength of the spectral sensitivity range of the photoelectric conversion unit disposed on the back side of the optical adjustment layer, and it is necessary to transmit the long wavelength light outside the sensitivity range. Absent. Further, the larger the transmittance, the better. However, it is particularly preferable that the transmittance is 90% or more. Similarly, even in the reflected short wavelength light, the reflected light may have a wavelength in the range used in the photoelectric conversion unit on the light incident surface side of the optical adjustment layer, and the larger the reflectance, the more preferable, especially 80%. It is desirable to have the above reflectivity.
  • the wavelength at which the reflected light and transmitted light are switched varies depending on the spectral sensitivity range of the photoelectric conversion unit adjacent to the optical adjustment layer. If the spectral sensitivity of the photoelectric conversion unit on the light incident surface side of the optical adjustment layer and the spectral sensitivity of the photoelectric conversion unit on the back surface side do not overlap, the wavelength at which the reflected light and transmitted light of the optical adjustment layer are switched is Preferably, it exists between the tail of the long wavelength side tail of the spectral sensitivity of the photoelectric conversion unit on the light incident surface side and the tail of the short wavelength side tail of the spectral sensitivity of the photoelectric conversion unit on the back surface side.
  • the switching wavelength is within the overlapping range. Is preferably present. Furthermore, it is preferable that the wavelength region where the reflectance of the optical adjustment layer is high and the wavelength region where the transmittance is high are switched sharply, and preferably switched within 100 nm.
  • Such an optical adjustment layer is produced by a multilayer film by alternately laminating a high refractive index material and a low refractive index material as disclosed in, for example, Patent Document 2 (Japanese Patent Laid-Open No. 2006-201450). (It is in the solar cell, not in the air, so the design needs to be modified accordingly). Moreover, it is possible to make an adjustment layer having the same optical characteristics even if nanoparticles are used, but as long as the adjustment layer has the above-described optical characteristics, what is used as the adjustment layer is not limited to these.
  • the refractive index difference between the low refractive index material and the high refractive index material is preferably 0.5 or more, particularly preferably 1 or more, but the refractive index difference is If there is, the kind of material will not be limited.
  • the refractive index of the material at that wavelength is n ( ⁇ ), and an integer m
  • the number of layers depends on the refractive index difference of the high and low refractive index materials, but is preferably between 5 and 100 layers.
  • a high refractive index material has a higher absorption coefficient as the refractive index increases, leading to a decrease in transmittance.
  • a long wavelength light such as when the wavelength range of light desired to be reflected is 800 nm or more.
  • the optical adjustment layer is disposed between the series elements as described above, but is not necessarily formed between all the series elements.
  • the series adjustment element including one photoelectric conversion unit and two or more Most preferably, it is produced between series elements composed of photoelectric conversion units.
  • N the number of unit cells of the series elements on the light incident surface side
  • M the number of unit cells of the series elements on the back surface side
  • the light is reflected by the optical adjustment layer.
  • the increase in the current value in the entire photoelectric conversion laminated device due to the introduction of the optical adjustment layer is ideally (1 / N ⁇ 1 / M) ⁇ I.
  • the intermediate layer in the normal series tandem structure exists at the serial connection interface, current must flow in a direction perpendicular to the film surface.
  • the optical adjustment layer is introduced in parallel. Since it is a connecting portion, it suffices if a current flows in a direction parallel to the film surface. For this reason, it is possible to use the material of both an electroconductive substance and an insulating substance for an optical adjustment layer.
  • a multilayer optical adjustment layer can be used rather than an intermediate layer having a normal series tandem structure, and a more advanced optical adjustment layer can be manufactured.
  • FIG. 3 a photoelectric conversion layered device composed of three photoelectric conversion units is depicted.
  • a case of an amorphous silicon photoelectric conversion unit 1a, a crystalline silicon photoelectric conversion unit 1b, and a compound semiconductor photoelectric conversion unit 1c is shown as each photoelectric conversion unit. Any type of photoelectric conversion unit may be used.
  • a substrate type solar cell device is taken as an example, but a super straight type solar cell device may be used.
  • the metal electrode 4 is formed on the insulating substrate 3.
  • a plate-like member or a sheet-like member made of glass, transparent resin, or the like is used as the insulating substrate 3.
  • crystallization of the chalcopyrite semiconductor is promoted by diffusing the group Ia element from the insulating substrate through the metal electrode.
  • the insulating substrate is preferably made of a material containing a group Ia element such as Na such as soda lime glass. Mo is preferable as the metal electrode.
  • the vapor deposition means include electron beam vapor deposition and sputter vapor deposition.
  • a chalcopyrite compound semiconductor photoelectric conversion unit is used as the compound semiconductor photoelectric conversion unit.
  • the chalcopyrite compound semiconductor photoelectric conversion unit a narrow band gap using the zinc oxide layer 5 and the CdS layer as the window layer and CIS as the light absorption layer was selected. It is desirable to form the film by controlling the temperature so that the substrate temperature becomes ⁇ 600 ° C.
  • the CdS layer may be a solution deposition method
  • the CIS layer may be a three-source vapor deposition method
  • the zinc oxide layer 5 may be a sputtering method, a thermal CVD method, or the like.
  • a photoelectric conversion unit is formed on the compound semiconductor photoelectric conversion unit. It is preferable to select a photoelectric conversion unit having an output voltage close to the difference in output voltage between the amorphous silicon photoelectric conversion unit 1a and the compound semiconductor photoelectric conversion unit 1c.
  • a crystalline silicon photoelectric conversion unit is used as the photoelectric conversion unit.
  • the crystalline silicon photoelectric conversion unit is usually composed of a p-type crystalline silicon layer, a substantially authentic crystalline silicon photoelectric conversion layer, and an n-type crystalline silicon interface layer.
  • a substrate temperature of 100 to 300 ° C., a pressure of 30 to 3000 Pa, and a high frequency power density of 0.1 to 0.5 W / cm 2 are preferably used.
  • a source gas used for forming the photoelectric conversion unit a silicon-containing gas such as SiH 4 or Si 2 H 6 or a mixture of these gases and H 2 is used.
  • the dopant gas for forming the p-type or n-type layer in the photoelectric conversion unit B 2 H 6 or PH 3 is preferably used.
  • the intermediate transparent electrode layer 6 is formed on the photoelectric conversion unit, and the optical adjustment layer 2 is formed in the intermediate transparent electrode layer 6.
  • the film thickness ratio is about the same as the ratio of the amount of current flowing from the light incident surface side to the back surface side from the optical adjustment layer side.
  • the thickness of the intermediate transparent electrode layer 6 on the back surface side is preferably provided.
  • the metal oxide is reduced and the transmittance and resistivity are remarkably deteriorated. It is preferable to cover the surface with ZnO having resistance to reduction.
  • the optical adjustment layer a layer in which a high refractive index material and a low refractive index material are alternately laminated, a nanoparticle, or the like is used, but any layer having high wavelength selectivity may be used.
  • the amorphous silicon photoelectric conversion unit includes an amorphous p-type silicon carbide layer, a substantially authentic amorphous silicon photoelectric conversion layer, and an n-type silicon-based interface layer.
  • a high frequency plasma CVD method is suitable for forming the amorphous photoelectric conversion unit.
  • the amorphous silicon photoelectric conversion unit has a p-front structure, and the series element composed of a crystalline photoelectric conversion unit and a compound semiconductor photoelectric conversion unit has an n-front structure. In some cases, restrictions are imposed on the p-front, n-front, etc., so the structure of the photoelectric conversion element must be changed as appropriate.
  • a substrate temperature of 100 to 300 ° C., a pressure of 30 to 1500 Pa, and a high frequency power density of 0.01 to 0.5 W / cm 2 are preferably used.
  • a source gas used for forming the photoelectric conversion unit a silicon-containing gas such as SiH 4 or Si 2 H 6 or a mixture of these gases and H 2 is used.
  • the dopant gas for forming the p-type or n-type layer in the photoelectric conversion unit B 2 H 6 or PH 3 is preferably used.
  • the band gap of the amorphous silicon photoelectric conversion unit can be widened by positively introducing H 2 .
  • a transparent electrode 8 is formed on the amorphous silicon photoelectric conversion unit.
  • the transparent electrode 8 is preferably a conductive metal oxide, and specific examples include SnO 2 , ZnO, In 2 O 3 and the like.
  • the transparent electrode 8 is preferably formed using a method such as CVD, sputtering, or vapor deposition.
  • the transparent electrode 8 desirably has an effect of increasing the scattering of incident light on the surface thereof. Specifically, it is desirable to have the effect of increasing the scattering of incident light by having fine irregularities.
  • a metal electrode 10 is formed to short-circuit the transparent electrode 8 and the back metal electrode 4.
  • the back electrode 4 may be short-circuited by the transparent electrode 8 instead of the metal electrode 10.
  • the insulating layer 7 is formed so that the side surfaces of the series elements 1b and 1c and the metal electrode 10 are not short-circuited. Instead of the insulating layer 7, an amorphous silicon photoelectric conversion unit 1a may be used in combination.
  • a metal electrode 9 is formed on the intermediate transparent electrode layer 6.
  • a metal material such as Ag or Al can be preferably used for the metal electrodes 8 and 10.
  • the backside metal electrode material can be formed by a method such as sputtering or vapor deposition.
  • the insulating layer 7 may be anything that can be insulated, such as SiO 2, and is preferably formed using a method such as CVD, sputtering, or vapor deposition.
  • FIG. 3 a series integrated photoelectric conversion device in which parallel photoelectric conversion stacked devices are electrically connected in series will be described with reference to FIG. 3 is different from FIG. 3 in that the metal electrodes 9 and 10 are not formed, and the transparent electrode 8 is used instead of the metal electrode 10 to short-circuit the light incident side surface and the back surface metal electrode 4.
  • the separation grooves A, B, and E and the connection grooves C and D are formed, and the other portions can be manufactured in the same manner.
  • the separation groove A is formed by using an IR laser having a wavelength of 900 nm or more, and the laser may be normally incident from the insulating substrate side, but a mask may be used at the time of film formation.
  • the separation groove B is preferably formed by irradiating YAG second harmonic wave or the like from the light incident side. After the separation groove B is formed, the insulating layer 7 is formed, and the transparent electrode 8 and the back metal electrode 4 are short-circuited by the connection groove C. Further, the intermediate transparent electrode layer 6 and the transparent electrode 8 are short-circuited by the connection groove D.
  • FIG. 3 is a cross-sectional view schematically showing the thin-film solar cell element produced in Example 3.
  • a Mo metal electrode 4 having a thickness of 0.5 ⁇ m was formed on one main surface of an insulating substrate 3 made of 2 mm thick soda lime glass by sputtering.
  • a CIS layer, a CdS layer, and a zinc oxide layer were formed as the compound semiconductor photoelectric conversion unit 1c.
  • a CIS film was formed at a substrate temperature of 600 ° C. by a ternary vapor deposition method, a CdS film was deposited by a solution deposition method, and finally zinc oxide was formed to a thickness of 200 nm by a sputtering method.
  • the insulating substrate 3 on which the compound semiconductor photoelectric conversion unit 1c is formed is introduced into a high-frequency plasma CVD apparatus. After heating to a predetermined temperature, a p-type silicon layer, a substantially intrinsic crystalline silicon photoelectric conversion layer, and an n-type silicon layer were sequentially laminated.
  • Insulating substrate 3 formed up to photoelectric conversion unit 1b to form intermediate transparent electrode layer 6 is introduced into a sputtering apparatus and heated to a predetermined temperature, and then the zinc oxide layer is formed by photoelectric conversion unit 1b by sputtering. A film was formed on top. Further, after attaching a mask, 31 layers of ZrO 2 and MgF 2 were formed by sputtering to produce an optical adjustment layer. Then, the intermediate transparent electrode layer 6 was formed again by sputtering.
  • the transparent insulating substrate 3 on which the intermediate transparent electrode layer 6 is formed is introduced into a high-frequency plasma CVD apparatus and heated to a predetermined temperature. Thereafter, an n-type silicon layer, an n-type amorphous silicon layer, a substantially intrinsic amorphous silicon photoelectric conversion layer, and a p-type silicon carbide layer were sequentially laminated.
  • the transparent electrode 7 is formed with a mask, and then the portion of the amorphous silicon photoelectric conversion unit 1a where the transparent electrode 7 is not formed is removed by RIE. Then, a part of the intermediate transparent electrode layer 6 was taken out.
  • a metal electrode 10 for short-circuiting the transparent electrode 8 and the back surface metal electrode 4 and a metal electrode 9 were prepared by attaching a mask and forming a film of Ag by a vapor deposition method. After film formation, annealing was performed at 150 ° C. for 1 hour.
  • a solar cell element having a 1 cm square light receiving area was separated from the multi-junction silicon solar cell obtained as described above, and its photoelectric conversion characteristics were measured.
  • the photoelectric conversion characteristics were measured by irradiating simulated sunlight with an energy density of 100 mW / cm 2 at 25 ° C. using a solar simulator having a spectral distribution of AM1.5, and the open circuit voltage (Voc). , Short-circuit current density (Jsc), fill factor (FF), power generation efficiency (Eff), and voltage-current characteristics.
  • Table 1 shows the photoelectric conversion characteristics of the solar cell elements of the above examples and comparative examples.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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Abstract

Pour obtenir une cellule solaire très efficace dans laquelle les unités de conversion photoélectrique sont reliées électriquement les unes aux autres en série et en parallèle, la présente invention propose un dispositif de conversion photoélectrique empilé en parallèle qui comporte une pluralité d'éléments empilés en série qui sont reliés électriquement les uns aux autres en parallèle. Chacun des éléments en série comprend au moins une unité de conversion photoélectrique, et une couche d'ajustement optique est disposée entre au moins deux éléments en série adjacents. La couche d'ajustement optique présente une sélectivité en longueur d'onde de réflexion et une sélectivité en longueur d'onde de transmission. La longueur d'onde de réflexion est sélectionnée en fonction de la sélectivité en longueur d'onde de réflexion à l'intérieur de la sensibilité spectrale des éléments en série sur le côté d'incidence de la lumière de la couche d'ajustement optique, et la longueur d'onde de transmission est sélectionnée en fonction de la sélectivité en longueur d'onde de transmission à l'intérieur de la sensibilité spectrale de toutes les unités de conversion photoélectrique sur le côté arrière de la couche d'ajustement optique.
PCT/JP2011/004679 2010-08-31 2011-08-23 Dispositif de conversion photoélectrique empilé en parallèle, et dispositif de conversion photoélectrique intégré en série WO2012029250A1 (fr)

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JP2015514323A (ja) * 2012-04-02 2015-05-18 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 薄膜太陽電池モジュールの製造方法、並びに、当該製造方法によって製造される薄膜太陽電池モジュール
WO2016017617A1 (fr) * 2014-07-29 2016-02-04 京セラ株式会社 Dispositif de conversion photoélectrique, dispositif de conversion photoélectrique en tandem et réseau de dispositifs de conversion photoélectrique

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JP2015050367A (ja) * 2013-09-03 2015-03-16 日本電信電話株式会社 太陽電池

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JP2015514323A (ja) * 2012-04-02 2015-05-18 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 薄膜太陽電池モジュールの製造方法、並びに、当該製造方法によって製造される薄膜太陽電池モジュール
WO2016017617A1 (fr) * 2014-07-29 2016-02-04 京セラ株式会社 Dispositif de conversion photoélectrique, dispositif de conversion photoélectrique en tandem et réseau de dispositifs de conversion photoélectrique
JPWO2016017617A1 (ja) * 2014-07-29 2017-04-27 京セラ株式会社 光電変換装置およびタンデム型光電変換装置ならびに光電変換装置アレイ

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