JP5905824B2 - 並列光電変換積層デバイスとその直列集積光電変換装置 - Google Patents
並列光電変換積層デバイスとその直列集積光電変換装置 Download PDFInfo
- Publication number
- JP5905824B2 JP5905824B2 JP2012531674A JP2012531674A JP5905824B2 JP 5905824 B2 JP5905824 B2 JP 5905824B2 JP 2012531674 A JP2012531674 A JP 2012531674A JP 2012531674 A JP2012531674 A JP 2012531674A JP 5905824 B2 JP5905824 B2 JP 5905824B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- series
- conversion unit
- parallel
- optical adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 162
- 230000003287 optical effect Effects 0.000 claims description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 claims description 13
- 230000003595 spectral effect Effects 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 35
- 239000002184 metal Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000010409 thin film Substances 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052951 chalcopyrite Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- -1 chalcopyrite compound Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
2,2a,2b 光学調整層
3 基板
4 裏面金属電極層
5 酸化亜鉛層
6 中間透明導電膜
7 絶縁層
8 透明電極
9 金属電極
10 金属電極
図3は、実施例にて作製した薄膜太陽電池素子を模式的に示す断面図である。まず、2mm厚のソーダライムガラスから成る絶縁基板3の一主面上に、スパッタ法を用いてMo金属電極4を、0.5μm製膜した。
Claims (5)
- 二つの直列素子が積層され、これら二つの直列素子間に光学調整層を有し、これら二つの直列素子が電気的に並列接続されてなる並列光電変換積層デバイスであって、
二つの直列素子は、それぞれ一つ以上の光電変換ユニットを含み、
該並列光電変換積層デバイスに含まれる複数の光電変換ユニットは、光入射面側からバンドギャップの大きい順に配列されており、
それぞれの直列素子を構成する光電変換ユニットの数は、裏面側の直列素子の方が光入射面側の直列素子よりも多く、
該光学調整層の光入射面側および裏面側の両方に接して透明導電膜が設けられ、
該光学調整層の光入射面側に接して設けられた透明導電膜と裏面側に接して設けられた透明導電膜とが導通されており、
該光学調整層が反射波長選択性及び、透過波長選択性を有し、
該反射波長選択性によって選択される反射波長が、該光学調整層より光入射側の光電変換ユニットの分光感度の範囲内に選択波長を有し、該透過波長選択性によって選択される透過波長が、該光学調整層より裏面側の光電変換ユニットの分光感度の範囲内に選択波長を有し、
該光学調整層は、絶縁性物質からなる層を含み、
同一の直列素子内に含まれる光電変換ユニットは、光入射面側の導電型が同一であり、光入射面側の直列素子の光電変換ユニットと裏面側の直列素子の光電変換ユニットとは、光入射面側の導電型が異なっていることを特徴とする並列光電変換積層デバイス。 - 前記光学調整層における前記反射波長選択性によって選択される反射光の反射率が80%以上であり、かつ、前記透過波長選択性によって選択される透過光の透過率が90%以上であることを特徴とする請求項1に記載の並列光電変換積層デバイス。
- 光入射面側から、非結晶質シリコン系光電変換ユニットからなる直列素子と、結晶質シリコン系光電変換ユニットおよび化合物系光電変換ユニットが電気的に直列に接続されてなる直列素子とが、電気的に並列に接続されていることを特徴とする請求項1または2に記載の並列光電変換積層デバイス。
- 前記光学調整層は、絶縁性の高屈折率材料と絶縁性の低屈折率材料とを交互に積層した多層膜からなることを特徴とする請求項1から3の何れかに記載の並列光電変換積層デバイス。
- 請求項1から4の何れかに記載の並列光電変換積層デバイスが電気的に直列に接続されていることを特徴とする直列集積光電変換装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010194495 | 2010-08-31 | ||
JP2010194495 | 2010-08-31 | ||
PCT/JP2011/004679 WO2012029250A1 (ja) | 2010-08-31 | 2011-08-23 | 並列光電変換積層デバイスとその直列集積光電変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012029250A1 JPWO2012029250A1 (ja) | 2013-10-28 |
JP5905824B2 true JP5905824B2 (ja) | 2016-04-20 |
Family
ID=45772377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012531674A Expired - Fee Related JP5905824B2 (ja) | 2010-08-31 | 2011-08-23 | 並列光電変換積層デバイスとその直列集積光電変換装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5905824B2 (ja) |
WO (1) | WO2012029250A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012205378A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule |
JP2015050367A (ja) * | 2013-09-03 | 2015-03-16 | 日本電信電話株式会社 | 太陽電池 |
JPWO2016017617A1 (ja) * | 2014-07-29 | 2017-04-27 | 京セラ株式会社 | 光電変換装置およびタンデム型光電変換装置ならびに光電変換装置アレイ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63122283A (ja) * | 1986-11-12 | 1988-05-26 | Nippon Denso Co Ltd | アモルフアス太陽電池 |
JPH09162431A (ja) * | 1995-12-13 | 1997-06-20 | Kanegafuchi Chem Ind Co Ltd | 並列型集積化太陽電池 |
JP2001308354A (ja) * | 2000-04-24 | 2001-11-02 | Sharp Corp | 積層型太陽電池 |
WO2006072423A1 (de) * | 2005-01-04 | 2006-07-13 | Azur Space Solar Power Gmbh | Monolithische mehrfach-solarzelle |
-
2011
- 2011-08-23 WO PCT/JP2011/004679 patent/WO2012029250A1/ja active Application Filing
- 2011-08-23 JP JP2012531674A patent/JP5905824B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63122283A (ja) * | 1986-11-12 | 1988-05-26 | Nippon Denso Co Ltd | アモルフアス太陽電池 |
JPH09162431A (ja) * | 1995-12-13 | 1997-06-20 | Kanegafuchi Chem Ind Co Ltd | 並列型集積化太陽電池 |
JP2001308354A (ja) * | 2000-04-24 | 2001-11-02 | Sharp Corp | 積層型太陽電池 |
WO2006072423A1 (de) * | 2005-01-04 | 2006-07-13 | Azur Space Solar Power Gmbh | Monolithische mehrfach-solarzelle |
Also Published As
Publication number | Publication date |
---|---|
WO2012029250A1 (ja) | 2012-03-08 |
JPWO2012029250A1 (ja) | 2013-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2006319068A (ja) | 多接合型シリコン系薄膜光電変換装置、及びその製造方法 | |
EP2469609B1 (en) | Thin film solar cell | |
JPWO2005011002A1 (ja) | シリコン系薄膜太陽電池 | |
JP2006120745A (ja) | 薄膜シリコン積層型太陽電池 | |
WO2013067427A1 (en) | Photovoltaic microstructure and photovoltaic device implementing same | |
JP2008270562A (ja) | 多接合型太陽電池 | |
JP2010087205A (ja) | 多接合型薄膜光電変換装置 | |
JP5905824B2 (ja) | 並列光電変換積層デバイスとその直列集積光電変換装置 | |
JP2002118273A (ja) | 集積型ハイブリッド薄膜光電変換装置 | |
JP2009289817A (ja) | 光電変換装置およびその製造方法 | |
JP2007305826A (ja) | シリコン系薄膜太陽電池 | |
JP2009290115A (ja) | シリコン系薄膜太陽電池 | |
EP2355173B1 (en) | Silicon thin film solar cell | |
JP2005347444A (ja) | 光起電力素子 | |
JP2012019128A (ja) | 薄膜光電変換装置 | |
US9947824B1 (en) | Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same | |
TW201041165A (en) | Solar battery and method for manufacturing the same | |
JP4261169B2 (ja) | 透光性薄膜太陽電池及び透光性薄膜太陽電池モジュールの製造方法 | |
JP2012182328A (ja) | 薄膜太陽電池セルおよびその製造方法、薄膜太陽電池モジュールおよびその製造方法 | |
JP2010272651A (ja) | 薄膜太陽電池およびその製造方法 | |
JP2009259926A (ja) | 太陽電池 | |
JP4875725B2 (ja) | 薄膜シリコン積層型太陽電池の製造方法 | |
JP5763411B2 (ja) | 積層型光電変換装置 | |
JP2011216586A (ja) | 積層型光電変換装置および積層型光電変換装置の製造方法 | |
JP5022246B2 (ja) | 多接合型シリコン系薄膜光電変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140619 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150507 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20150507 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150908 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160315 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160317 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5905824 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |