WO2012019334A1 - 化学机械抛光心轴装置 - Google Patents

化学机械抛光心轴装置 Download PDF

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Publication number
WO2012019334A1
WO2012019334A1 PCT/CN2010/001804 CN2010001804W WO2012019334A1 WO 2012019334 A1 WO2012019334 A1 WO 2012019334A1 CN 2010001804 W CN2010001804 W CN 2010001804W WO 2012019334 A1 WO2012019334 A1 WO 2012019334A1
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WO
WIPO (PCT)
Prior art keywords
mandrel
polishing
turret
rotation mechanism
chemical mechanical
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PCT/CN2010/001804
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English (en)
French (fr)
Inventor
陈威
廖垂鑫
王东辉
王伟
Original Assignee
中国电子科技集团公司第四十五研究所
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Application filed by 中国电子科技集团公司第四十五研究所 filed Critical 中国电子科技集团公司第四十五研究所
Priority to CA2806138A priority Critical patent/CA2806138C/en
Publication of WO2012019334A1 publication Critical patent/WO2012019334A1/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0076Other grinding machines or devices grinding machines comprising two or more grinding tools

Definitions

  • the invention relates to the technical field of chemical mechanical polishing equipment, in particular to a chemical mechanical polishing equipment spindle device.
  • Chemical mechanical polishing is a method of planarizing or polishing a substrate of a semiconductor material or other type of material.
  • the polishing head plays the role of picking up the silicon wafer and driving the silicon wafer to rotate on the polishing pad.
  • the wafer picking and wafer rotation are realized by a wafer carrier, the wafer carrier and the heart.
  • the carrier flange on the shaft system is vacuum-fixed, and wafer pick-up and wafer rotation are powered through the mandrel system.
  • a mechanism in which the mandrel device connects, lifts, rotates, and achieves accurate mandrel force control during the polishing process.
  • the mandrel device and carrier form the entire polishing head system, which has functions such as wafer clamping, downforce generation, back pressure generation, pressure adjustment, rotation, and station transfer.
  • the conventional CMP mandrel device adopts a lever structure to realize the lifting and lowering of the polishing head.
  • the disadvantage of this mechanism is that the polishing head is perpendicular to the polishing table only when the lever is horizontal, and the polishing head is required to be perpendicular to the polishing table during the actual polishing process.
  • This kind of mandrel lifting device that relies on the lever requires the machining precision and assembly precision of the part machine to be high, and the mandrel force precision is difficult to control.
  • the mandrel device of the chemical mechanical polishing of the silicon wafer of the invention can ensure that the polishing head and the polishing table are always perpendicular during the lifting process of the mandrel due to the four-bar linkage structure.
  • the pressure sensor is installed in the four-link structure, and the closed-loop control technology is adopted to achieve precise control of the mandrel force.
  • Two polishing mandrel rotation mechanisms or a plurality of polishing mandrel rotation mechanisms can be used in the device, which has the advantages of compact mechanism and high efficiency, and the problem of winding between lines when the mandrel is continuously rotated is well solved by using the rotary joint technology.
  • the object of the present invention is to provide a chemical mechanical polishing mandrel device which can ensure that the polishing head and the polishing table are always perpendicular during the lifting process of the mandrel, and has a simple structure and a mandrel force. It has the characteristics of high control, high processing precision, high work efficiency and convenient use. It is widely used in silicon chemical mechanical polishing equipment, and can also be applied to other semiconductor materials or other types of materials with similar CMP process requirements. Processing on half equipment.
  • the main technical solution of the device of the invention is: a chemical mechanical polishing mandrel device, comprising a polishing mandrel rotation mechanism, characterized in that a turret mechanism is provided, and the turret mechanism is connected by a four-link lifting mechanism and a polishing spindle rotation mechanism. It also has a silicon wafer adsorption mechanism.
  • the structure of the four-link lifting mechanism may be: having an upper movable plate, a lower movable plate, a vertical plate and a rotating shaft of the polishing spindle and a turret hinge of the turret mechanism; the rotating frame is connected with the power mechanical transmission device ; The upper or lower movable plate is connected to the power lifter.
  • the power lifter is preferably an airbag charging and discharging air lifter, has smooth movement and is easy to control, and the better structure thereof is: the fixing plate is fixed on the vertical plate provided on the rotating frame, the pressure spring and the airbag charging and releasing mechanism They are respectively fixed on the upper and lower surfaces of the fixed plate, and the other ends of the pressure spring and the air bag filling and releasing device are respectively connected with the upper movable plate and the lower movable plate.
  • the power lifter can also be a piston type charge and discharge (oil) type lifter, or a motor mechanical lifter.
  • the four-link lifting mechanism is provided with a pressure sensor a and an axial force control closed-loop control circuit.
  • the preferred structure of the polishing mandrel rotation mechanism is as follows:
  • the servo motor is connected to the mandrel through a reducer, and the mandrel is connected by a tapered roller bearing and a mandrel sleeve.
  • the turret mechanism may be provided with one set, or two or more sets (including three sets) of polished mandrel rotation mechanism and four-link lifting mechanism; each four-link lifting mechanism is connected with the turret;
  • the power mechanical transmission connected to the turret adopts a turret multi-layer shaft transmission structure.
  • the turret multi-layer shaft transmission structure is preferably: a second sleeve shaft is arranged outside the tower shaft, and the tower shaft is connected by the first fixing frame and the first polishing mandrel rotation mechanism, and the first turret has one end and the first one.
  • the polishing mandrel is connected to the rotation mechanism, and the other end is connected to the second sleeve shaft through a bearing; the second sleeve shaft is equipped with a third sleeve shaft, and the second sleeve shaft passes through the second holder and the second polishing spindle rotation mechanism.
  • one end of the second turret is connected to the second polishing mandrel rotation mechanism, and the other end is connected to the third sleeve shaft through a bearing or directly connected to the second sleeve shaft.
  • the multi-layer shafting transmission structure can be deduced in this way.
  • the structure of the silicon wafer adsorption and placement mechanism can be: the gas path causes the back pressure of the wafer to be polished; the vacuum realizes the fixing of the carrier flange and the carrier and the function of adsorbing the silicon wafer (can be the same as the prior art);
  • a three-channel rotary joint connected to the tower shaft in the turret mechanism introduces a fluid hose into the turret, and the fluid flowing out of the turret is divided into two by a pipe joint, and the fluid passing through the turret is introduced into the two polishing by a six-channel rotary joint.
  • the spindle rotation mechanism is controlled by a hose through a polishing mandrel rotation mechanism to perform fluid control; after the silicon wafer is polished, the carrier is smoothly and reliably placed on the unloading table.
  • the turret multi-layer shaft transmission structure adopts the following transmission circuit structure: the conductive slip ring cooperated with the turret, the rotating end of the conductive slip ring is fixed on the fixed bracket, and the fixed bracket is mounted on the tower shaft.
  • the tower shaft drives the rotating end of the conductive slip ring to rotate, as described above, while the tower shaft drives the first polishing mandrel rotation mechanism, thereby the conductive slip ring can realize different voltage and electric signals to be introduced into the first polishing mandrel.
  • Self-rotating mechanism the following transmission circuit structure: the conductive slip ring cooperated with the turret, the rotating end of the conductive slip ring is fixed on the fixed bracket, and the fixed bracket is mounted on the tower shaft.
  • the first polishing mandrel rotation mechanism and the second polishing mandrel rotation mechanism are coupled by the drag chain, so that the first polishing mandrel rotation mechanism receives the different voltage and electric signals through the conductive slip ring from the first polishing core.
  • the shaft rotation mechanism is led to the second polishing mandrel rotation mechanism.
  • the positive effect of the invention is that: the device can effectively solve the problems existing in the prior art, and the device can ensure that the polishing head and the polishing table are always perpendicular during the lifting process of the mandrel, and has the advantages of simple structure, easy control of the mandrel force, and processing precision. High, high efficiency, easy to use; can use two polishing spindle rotation mechanism or multiple polishing spindle rotation mechanism, use them separately according to need, which can achieve flexible use, compact structure and high efficiency;
  • the rotary joint technology also solves the problem of entanglement between the spindles during continuous rotation. It is widely used in silicon chemical mechanical polishing equipment, and can also be applied to other processing equipments with semiconductor materials or other types of materials similar to CMP.
  • Figure 1 is a schematic view showing the structure of a spindle device according to a preferred embodiment of the present invention.
  • Figure 2 is a front elevational view of the polished mandrel portion of Figure 1.
  • 3 is a three-dimensional view of the four-bar linkage mechanism of FIG. 1.
  • Figure 4 is a motion trajectory diagram of the airbag charging and deflation mechanism of Figure 1.
  • Figure 5 is a cross-sectional view of the center shaft of Figure 1.
  • Figure 6 is a front elevational view of the turret of Figure 1.
  • Figure 7 is a cross-sectional view of the turret of Figure 1.
  • Figure 8 is a block diagram of the central axis force control system of Figure 1.
  • Figure 9 is a three-dimensional view of the central axis force correction of Figure 1.
  • the reference numerals in the figure are as follows: 1 carrier, 2—polishing mandrel rotation mechanism (when there are multiple, it can be divided into the first polishing mandrel rotation mechanism, the second polishing mandrel rotation mechanism, etc.), 3_ turret System, 4-16-channel rotary joint, 5-synchronous pulley, 6-adjustment block, 7-motor (for multiple times, can be divided into first motor, second motor, etc.), 8 links, 9 airbag charging and discharging Air mechanism, 10 - mandrel sleeve, 1 1 fixed plate, 12 compression spring adjustment block, 13 compression spring, 14 one reducer, 15 gas nozzle, 16-three-way rotary joint, 17 - first fixed frame, 18 tower Shaft, 19 1st turret, 20 - upper flap, 21 - swivel flange, 22 - pressure sensor a, 23 - proximity switch, 24 - lower flap, 25 lock, 26 spindle, 27 sensor bracket, 28— 2nd set shaft (or tower center shaft
  • the mandrel system and the carrier 1 constitute the entire polishing head system, functionally having wafer clamping, downforce generation, back pressure generation, pressure adjustment, Rotation, station transfer and many other functions.
  • the mandrel device includes a polishing mandrel rotation mechanism 2 and a turret mechanism 3.
  • the polishing mandrel rotation mechanism 2 is connected to the carrier 1 and has a silicon wafer clamping, a station switching, and a lower pressure control function. After the turret 3 is connected to the two polishing mandrel rotation mechanisms 2 The polishing between the spindles is performed, and the proximity switch 23 on the sensor holder 27 is used for precise positioning.
  • the two polishing mandrel rotation mechanisms 2 typically rotate the wafers in a single direction, and each of the polishing mandrel rotation mechanisms 2 can operate independently on a particular polishing table 43.
  • the polishing mandrel rotation mechanism 2 controller controls the rotation, lifting, back pressure, and holding force of the polishing mandrel rotation mechanism 2, and the polishing mandrel rotation mechanism 2 controller can be realized by the programmable logic controller PLC, the motion controller and the polishing One of the spindle rotation mechanisms 2 is fixedly coupled to drive the rotation of the two polishing spindle rotation mechanisms 2.
  • the motion controller independently drives the two polishing spindle rotation mechanisms 2 such that the two polishing spindle rotation mechanisms 2 can be independently rotated.
  • the first polishing mandrel rotation mechanism 2 can rotate when the second polishing mandrel rotation mechanism 2 is stationary, and the second polishing mandrel rotation mechanism 2 can rotate when the first polishing mandrel rotation mechanism 2 is stationary.
  • Fig. 1 is a structural view showing a mandrel device
  • Fig. 2 is a front view showing a polishing mandrel rotation mechanism for realizing a polishing mandrel lifting and a polishing mandrel rotation.
  • Polishing mandrel lifting The lifting and lowering of the polishing mandrel is realized by a four-bar linkage mechanism (shown in Fig. 3).
  • the fixing plate 11 is fixed on the vertical plate 39
  • the compression spring 13 and the airbag charging and releasing mechanism 9 They are respectively fixed on the upper and lower surfaces of the fixed plate 11, and the other ends of the compression spring 13 and the airbag charging and releasing mechanism 9 are respectively connected with the upper movable plate 20 and the lower movable plate 24, and the upper and lower movable plates 20 and 24 are respectively mounted on the four links.
  • the four-bar linkage mechanism is connected to the mandrel 26, and the mandrel 26 is balanced on the compression spring 13 and the airbag charging and deflation mechanism 9, and the airbag charging and releasing mechanism 9 is inflated to realize the rise of the mandrel 26.
  • the air bag charging and deflation mechanism 9 deflates the lowering of the mandrel 26, and this process also controls the mandrel force.
  • the airbag charging and deflation mechanism 9 has a simple structure and is formed by fastening two rubber plates to the rubber airbag. If the inflation state of the air bag filling and deflation mechanism is maintained, the cylinder becomes a gas spring.
  • the airbag charging and deflation mechanism has the following characteristics: it has good flexibility; the tilting angle is up to 30 degrees; and the stroke of the airbag charging and discharging mechanism can be described as a circular trajectory, which cannot exceed the range of the tilt angle ⁇ , the inclination angle The maximum value of ⁇ is 30°, as shown in Fig. 4.
  • the use of airbag charging and deflation mechanism can well solve the problem of carrier lateral displacement during the four-link lifting process.
  • the polishing spindle rotates:
  • the servo motor 35 rotates the spindle 26 through the speed reducer 14, and the spindle 26 and the tapered roller bearing 46 are mounted as shown in FIG.
  • Polishing mandrel revolving As shown in Fig. 6, the first motor 7 drives the pulley 52 to rotate by the timing belt 31, and the pulley 52 drives the tower shaft 18 to rotate.
  • the tower shaft 18 passes through the first fixing frame 17, the first turret 19, respectively.
  • the first polishing mandrel rotation mechanism 2 is independently rotated; similarly, the second motor 7 drives the other pulley to rotate by another timing belt, and the other pulley drives the second sleeve shaft 28 to rotate, and the second sleeve shaft 28 passes through the second 2
  • the turret 41 and the second fixing frame 40 drive the second polishing mandrel rotation mechanism 2 to rotate independently, so that the two polishing mandrel rotation mechanisms 2 independently revolve around the turret 3 .
  • Figure 8 is a block diagram of the spindle force control system.
  • the task is to make the applied mandrel force equal to a given mandrel force.
  • the mandrel force measured by the pressure sensor compares the data feedback with the given mandrel force.
  • the PLC controller calculates according to a certain rule, the output signal is input to the electric proportional valve to control the airbag charging and releasing mechanism. Achieve the purpose of controlling the mandrel force.
  • Precise mandrel force control The air pressure of the airbag venting mechanism 9 is precisely controlled by an electric proportional valve to control the pressure under the mandrel.
  • a pressure sensor a22 is installed at the bottom of the airbag charging and discharging mechanism 9, and a closed loop control is formed by the pressure sensor a22 and the electric proportional valve, thereby improving the control precision.
  • the pressure range of the airbag charging and discharging mechanism is 0 ⁇ 0.7Mpa
  • the control signal of the electric proportional valve is 4 ⁇ 20mA
  • the output end of the electric proportional valve is connected to the air pressure sensor a22, set
  • the input corresponding to input 4mA is O.OOlMpa
  • the pressure corresponding to input 20mA is 0.8Mpa. According to these two values, the relationship between the input and output of the electric proportional valve can be obtained.
  • Calibration of the mandrel pressure Remove the carrierl from the polishing mandrel rotation mechanism 2, mount the test mounting plate as shown in Fig. 9, and then press the test mounting plate 44 against the pressure sensor b42, the pressure sensor b42 and the test mounting plate.
  • the total height of 44 is the same as the carrier.
  • a pressure value is input every 0.05 Mpa from 0 to 0.8 MPa, a set of pressure values is obtained from the force sensor b42, and the bottom of the airbag charging and discharging mechanism 9 can also be obtained.
  • the pressure sensor a22 obtains a set of pressure values.
  • Mandrel fluid control The fluid coupling is connected to the three-way rotary joint 16 and enters the hose in the tower shaft 18 of the turret mechanism 3 via the three-way rotary joint 16 and flows out of the turret mechanism 3 tower shaft 18.
  • the fluid is divided into two through the pipe joint, and is introduced into the mandrel 26 through the six-channel rotary joint 4, and the fluid is vacuum, compressed air, deionized water, etc., the water path, the gas path, the vacuum through the rotary joint 4, the mandrel 26, and the carrying
  • the flange 45 is connected to the carrier, wherein the four-way nitrogen generates a 3-zone back pressure and a one-way holding ring force, and the two-way vacuum realizes a fixed function of the adsorption silicon wafer and the mandrel 26 and the carrier 1, wherein a nitrogen gas generating a back pressure is generated.
  • a channel is shared with the vacuum of the adsorption silicon wafer, and is controlled by a solenoid valve.
  • the flow of water is controlled by a proportional valve, and the pressure of the compressed air is controlled by an electrical proportional valve.
  • the system consisting of the polishing mandrel rotation mechanism and the carrier relies on the vacuum action to drive the lifting and the adjustment of the mandrel force, and the turret mechanism drives the polishing mandrel rotation mechanism to revolve through the action of the timing pulley and the turret. Station conversion.
  • the pressure sensor can be selected in the polishing mandrel lifting mechanism, and the closed-loop control technology is adopted to achieve precise control of the mandrel force.
  • a conductive slip ring for electrical signals and power at the top of the turret is provided for transporting electrical power (different voltages) and electrical signals for communication between the polishing spindle controller and the polishing spindle; the rotary joint, conductive slip ring technology can be used to solve the problem Winding between lines when the shaft is continuously rotated.
  • the system uses two polishing mandrel rotation mechanisms or multiple polishing mandrel rotation mechanisms, which are used separately as needed to achieve flexible use and compact structure.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Description

化学机械抛光心轴装置 技术领域
本发明涉及化学机械抛光设备技术领域, 特别是一种化学机械抛光 设备心轴装置。
背景技术
化学机械抛光 (CMP ) 是一种对半导体材料或是其它类型的材料的 衬底进行平坦化或是抛光的方法。 在化学机械抛光过程中, 抛光头起着 拾取硅片和带动硅片旋转在抛光垫上进行抛光的作用, 硅片拾取和硅片 旋转通过硅片运载器(carrier)实现, 硅片运载器与心轴系统上的运载器 法兰盘通过真空固定, 硅片拾取和硅片旋转通过心轴系统提供动力。 心 轴装置对运载器(carrier)进行连接、 升降、 旋转及在抛光过程实现精确 心轴力控制的机构。 心轴装置与 carrier组成整个抛光头系统, 在功能上 具有硅片夹持、 下压力产生、 背压产生、 压力调整、 旋转、 工位传递等 多种功能。传统的 CMP心轴装置采用杠杆结构实现抛光头的升降, 此机 构的缺点是抛光头只在杠杆处于水平时才与抛光台垂直, 而在实际抛光 过程中要求抛光头与抛光台一直垂直, 因此这种传统依靠杠杆实现的心 轴升降装置要求零件机械的加工精度、 装配精度很高, 并且心轴力精度 难以控制。 本发明硅片化学机械抛光的心轴装置因采用四连杆结构可以 保证在心轴升降过程中抛光头与抛光台一直垂直。 在四连杆结构中安装 压力传感器, 采用闭环控制技术, 实现心轴力的精确控制。 本装置中可 使用两个抛光心轴自转机构或多个抛光心轴自转机构, 具有机构紧凑、 效率高的优点, 使用旋转接头技术很好地解决了心轴连续旋转时的线路 间缠绕问题。
发明内容
本发明的目的是提供一种化学机械抛光心轴装置, 该装置可以保证 在心轴升降过程中抛光头与抛光台一直垂直, 具有结构简单、 心轴力易 于控制、 加工精度高、 工作效率高、 使用方便的特点; 用途广, 尤其适 用于硅片化学机械抛光设备上,也可适用于其它具有与 CMP相似工艺要 求的半导体材料或其它类型的材料的加工半设备上。
本发明装置的主要技术方案是: 一种化学机械抛光心轴装置, 包括 抛光心轴自转机构, 其特征在于设有转塔机构, 转塔机构通过四连杆升 降机构和抛光主轴自转机构相连, 并设有硅片吸附机构。
所述的四连杆升降机构的结构可为: 具有上活动板、 下活动板, 竖 板和抛光主轴自转机构的外壳及转塔机构的转动架相铰联; 转动架和动 力机械传动装置相连; 上活动板或下活动板和动力升降器相连。
所述的动力升降器为气囊充放气式升降器较佳, 运动平稳, 易控制, 其较好结构为: 固定板固定在转架上设的竖板上, 压簧和气囊充放气机 构分别固定在固定板的上下面上, 压簧和气囊充放气机构的另一端分别 与上活动板、 下活动板连接。
所述的动力升降器也可为活塞式充放气 (油) 式升降器、 或电机机 械式升降器等。
所述的四连杆升降机构中设有压力传感器 a及轴力控制闭环控制电 路较好。
所述的抛光心轴自转机构的较好结构为: 伺服电机通过减速器和心 轴相连, 心轴通过圆锥滚子轴承和心轴套相连。
所述的转塔机构可设有 1套, 或 2套或 3套以上 (含 3套) 的抛光 心轴自转机构及四连杆升降机构; 每个四连杆升降机构均和转动架相连; 和转动架相连的动力机械传动装置采用转塔多层轴系传动结构。
所述的转塔多层轴系传动结构较好为: 塔轴外装有第 2套式轴, 塔 轴通过第 1固定架和第 1抛光心轴自转机构相连,第 1转动架一端和第 1 抛光心轴自转机构相连, 另一端通过轴承与第 2套式轴相连; 第 2套式 轴外装有第 3套式轴, 第 2套式轴通过第 2固定架和第 2抛光心轴自转 机构相连, 第 2转动架一端和第 2抛光心轴自转机构相连, 另一端通过 轴承与第 3套式轴相连或直接与第 2套式轴相连。 其多层轴系传动结构 可以此类推。 硅片吸附及其放置机构的结构可为: 气路使硅片抛光过程产生区域 背压; 真空实现运载器法兰盘与运载器的固定及吸附硅片的功能 (可同 已有技术) ; 与转塔机构中塔轴进行连接的三通道旋转接头将流体用软 管引入转塔, 流出转塔的流体经管接头一分为二, 将经过转塔的流体用 六通道旋转接头引入两个抛光心轴自转机构, 并用软管经抛光心轴自转 机构进入运载器, 进行流体的控制; 实现硅片抛光后从运载器平稳、 可 靠放到卸载台上。
所述的用转塔多层轴系传动结构采用以下输电电路结构较好: 与转 塔合作的导电滑环, 导电滑环的旋转端固定在固定支架上上, 固定支架 安装在塔轴上, 塔轴带动导电滑环的旋转端旋转, 如上面所述, 同时塔 轴带动第一抛光心轴自转机构旋转, 由此导电滑环可以实现将不同的电 压和电信号引入到第 1抛光心轴自转机构。 用拖链在第一抛光心轴自转 机构和第 2抛光心轴自转机构建立联结, 使得第 1抛光心轴自转机构通 过导电滑环接收的不同的电压和电信号中的被从第一抛光心轴自转机构 被引到第 2抛光心轴自转机构。
本发明的积极效果是: 利用该装置可以有效解决现有技术中存在的 问题, 该装置可以保证在心轴升降过程中抛光头与抛光台一直垂直, 具 有结构简单、 心轴力易于控制、 加工精度高、 工作效率高、 使用方便的 特点; 可使用两个抛光心轴自转机构或多个抛光心轴自转机构, 根据需 要分别使用它们, 这样可以达到灵活使用、 机构紧凑、 效率高的目的; 使用旋转接头技术还可很好地解决了心轴间在连续旋转时线路间缠绕问 题。 用途广, 尤其适用于硅片化学机械抛光设备上, 也可适用于其它具 有与 CMP相似工艺要求的半导体材料或其它类型的材料的加工半设备 上。
以下结合一个较好的实施例及其附图作详述, 但本实施例不能作为 对本发明的限定。
附图说明
图 1为本发明一个较好的实施例心轴装置的结构示意图。
图 2为图 1中抛光心轴部分的正视图。 图 3为图 1中四连杆机构的三维图。
图 4为图 1中气囊充放气机构的运动轨迹图。
图 5为图 1中心轴安装剖面图。
图 6为图 1中转塔的正视图。
图 7为图 1中转塔的剖视图。
图 8为图 1中心轴力控制系统框图。
图 9为图 1中心轴力校正三维图。
图中标号说明如下: 1 运载器(carrier), 2—抛光心轴自转机构(为 多个时,可分为第 1抛光心轴自转机构、第 2抛光心轴自转机构等), 3_ 转塔系统, 4一六通道旋转接头, 5—同步带轮, 6—调节块, 7—电机(为 多个时, 可分为第 1电机、 第 2电机等) , 8 连杆, 9 气囊充放气机 构, 10—心轴套, 1 1一固定板, 12 压簧调整块, 13 压簧, 14一减速 器, 15 气嘴, 16—三通道旋转接头, 17—第 1固定架, 18 塔轴, 19 第 1转动架, 20—上活动板, 21—旋转接头法兰, 22—压力传感器 a, 23— 接近开关, 24—下活动板, 25 锁母, 26 心轴, 27 传感器支架, 28— 第 2套式轴 (或塔中轴) , 29—第 3套式轴 (或塔外轴) , 30 基座, 31—同步带, 32—气缸接头, 33 限位块支架, 34—限位块, 35—伺服 电机, 36 压母, 37 轴承, 38—轴承杆, 39 竖板, 40—第 2固定架, 41一第 2转动架, 42—压力传感器 b, 43—抛光台, 44 测试安装板, 45— 运载器法兰盘, 46—圆锥滚子轴承, 47—密封件, 48 锁母, 49一导电 滑环, 50—固定支架, 51—轴承 A, 52 带轮; 图 4中, H2—气囊充放 气机构安装的最小高度, H3—气囊充放气机构安装的最大高度, X—气 囊充放气机构安装的中心处的高度, 01_气囊充放气机构倾角的范围。 具体实施方式
参见图 1〜图 9, 该较佳实施例中, 心轴系统与运载器 (carrier) 1 组成整个抛光头系统, 在功能上具有硅片夹持、 下压力产生、 背压产生、 压力调整、 旋转、 工位传递等多种功能。 心轴装置包括抛光心轴自转机 构 2和转塔机构 3。抛光心轴自转机构 2与承载器 1连接后具有硅片夹持、 工位转换、 下压力控制功能。 转塔 3与两个抛光心轴自转机构 2连接后 进行抛光主轴间工位转换, 并利用传感器支架 27上的接近开关 23实现 精确定位。 两个抛光心轴自转机构 2通常在在单个方向旋转处理硅片, 每个抛光心轴自转机构 2可以在特定的抛光台 43独立的工作。抛光心轴 自转机构 2控制器控制抛光心轴自转机构 2的旋转、 升降、 背压、 保持 环力,抛光心轴自转机构 2控制器可以通过可编程逻辑控制器 PLC实现, 运动控制器与抛光心轴自转机构 2 中的一个固定在一起驱动两个抛光心 轴自转机构 2的旋转。 运动控制器独立地驱动两个抛光心轴自转机构 2, 使得两个抛光心轴自转机构 2可以独立旋转。 第 1抛光心轴自转机构 2 可以在第 2抛光心轴自转机构 2静止时旋转, 第 2抛光心轴自转机构 2 可以在第 1抛光心轴自转机构 2静止时旋转。
图 1示出了心轴装置的结构图, 图 2示出抛光心轴自转机构的正视 图, 抛光心轴自转机构实现抛光心轴升降、 抛光心轴自转。
抛光心轴升降: 抛光心轴的升降通过四连杆机构 (图 3所示) 实现, 参见图 2〜图 3, 固定板 11固定在竖板 39上, 压簧 13和气囊充放气机 构 9分别固定在固定板 11的上下面上, 压簧 13和气囊充放气机构 9另 一端分别与上活动板 20、 下活动板 24连接, 上、 下活动板 20、 24分别 安装在四连杆机构上, 四连杆机构与心轴 26相连, 心轴 26在压簧 13和 气囊充放气机构 9上保持平衡, 通过对气囊充放气机构 9充气, 实现心 轴 26的上升, 通过对气囊充放气机构 9放气, 实现心轴 26的下降, 这 一过程也实现对心轴力的控制。
气囊充放气机构 9结构简单, 由两块金属板扣住橡胶气囊而成。 如 果保持气囊充放气机构的充气状态, 则该气缸就成了一个气弹簧。 气囊 充放气机构具有以下特性:具有很好的柔性;倾斜提升角度达 30度; 同 时气囊充放气机构的行程可以被描述成一个圆周轨迹, 这个轨迹不能超 过所示倾角 α的范围, 倾角 α最大值 30° , 如图 4所示。选用气囊充放气 机构可以很好解决 Carrier在四连杆升降过程中产生横向偏移问题。
抛光主轴自转: 伺服电机 35通过减速器 14带动心轴 26旋转, 心轴 26与圆锥滚子轴承 46安装如附图 5所示。 抛光心轴公转: 如图 6所示, 第 1电机 7通过同步带 31带动带轮 52 旋转, 带轮 52带动塔轴 18旋转, 塔轴 18分别通过第 1固定架 17、 第 1 转动架 19带动第 1抛光心轴自转机构 2独立旋转; 同理第 2电机 7通过 另一同步带带动另一带轮旋转, 另一带轮带动第 2套式轴 28旋转, 第 2 套式轴 28分别通过第 2转动架 41、 第 2固定架 40带动第 2抛光心轴自 转机构 2独立旋转, 从而实现两个抛光心轴自转机构 2绕转塔 3独立地 进行公转。
图 8为心轴力控制系统框图。 在该系统中, 其任务是使施加的心轴 力等于给定的心轴力。 由压力传感器测量的心轴力, 把数据反馈与给定 的心轴力比较, 经 PLC控制器按一定的规律计算后, 输出的信号输入到 电气比例阀阀去控制气囊充放气机构, 从而达到控制心轴力的目的。
精确心轴力控制: 通过电气比例阀精确控制通入到心轴 26上的气囊 充放气机构 9内部气压, 从而控制心轴下压力。 在气囊充放气机构 9底 部装有压力传感器 a22,通过压力传感器 a22与电气比例阀形成闭环控制, 从而提高控制精度。
电气比例阀的校准: 根据下压力计算出气囊充放气机构的压力范围 为 0〜0.7Mpa, 电气比例阀的控制信号为 4〜20mA, 将电气比例阀的输 出端接上气压传感器 a22, 设置输入 4mA对应的输出为 O.OOlMpa; 输入 20mA对应的气压为 0.8Mpa, 根据这两个值可以得出电气比例阀输入与 输出的关系。
心轴下压力的校准: 从抛光心轴自转机构 2上卸下 carrierl , 装上测 试安装板如图 9所示, 然后将测试安装板 44压在压力传感器 b42上, 压 力传感器 b42和测试安装板 44的总高度与 carrier相同。根据前面得到的 电气比例阀输入与输出的关系,从 0到 0.8Mpa之间每隔 0.05Mpa输入一 个气压值, 从力传感器 b42得到一组压力值, 另外还可以从气囊充放气 机构 9底部的压力传感器 a22得到一组压力值, 根据这些数据可以得出 电气比例阀的输出气压与心轴下压力的关系和心轴下压力与气囊充放气 机构 9底部压力传感器 a22测量值的关系, 根据这种关系进行心轴下压 力的校准。 心轴流体控制: 流体用管接头与三通道旋转接头 16连接, 并经三通 道旋转接头 16进入转塔机构 3的塔轴 18内的软管里, 从转塔机构 3塔 轴 18流出的流体经管接头一分为二, 经六通道旋转接头 4引入心轴 26 软管里, 流体为真空、 压缩空气、 去离子水等, 水路、 气路、 真空通过 旋转接头 4、 心轴 26、 运载器法兰盘 45与 carrier相连, 其中 4路氮气产 生 3区域背压和一路保持环力, 2路真空实现吸附硅片和心轴 26与运载 器 1的固定功能, 其中产生背压的一路氮气与吸附硅片的一路真空公用 一个通道, 由一个电磁阀实现控制。 水的流量通过比例阀控制, 压缩空 气的压力通过电气比例阀控制。
本实施例中, 抛光心轴自转机构与承载器组成的系统依靠真空作用 带动硅片升降及心轴力的调整, 转塔机构通过同步带轮、 转动架的作用 带动抛光心轴自转机构公转进行工位转换。 在抛光心轴升降机构中可选 用压力传感器, 采用闭环控制技术, 实现心轴力精确控制。 流体通过三 通道旋转接头进入转塔机构, 从转塔机构流出的流体经管接头一分为二, 经六通道旋转接头、 心轴、 心轴法兰后与 carrier连接, 在抛光过程中起 到产生背压、 吸附硅片、 清洗硅片等作用。 转塔的顶部处用于电信号和 动力的导电滑环提供用于输送电力 (不同电压) 和电信号以通信到抛光 主轴控制器和抛光主轴间; 可使用旋转接头、 导电滑环技术解决心轴间 连续旋转时的线路间缠绕问题。 系统使用两个抛光心轴自转机构或多个 抛光心轴自转机构, 根据需要分别使用它们, 这样可以达到灵活使用、 机构紧凑的目的。
以上所述仅为本发明的较佳实施例而已, 并不用以限制本发明, 凡 在本发明的精神和原则之内所作的任何修改、 等同替换和改进等, 均应 包含在本发明的保护范围之内。

Claims

权 利 要 求 书
1、 一种化学机械抛光心轴装置, 包括抛光心轴自转机构 (2 ) , 其 特征在于设有转塔机构 (3 ) , 转塔机构 (3 ) 通过抛光主轴四连杆升降 机构和抛光主轴自转机构 (2) 相连, 并设有硅片吸附机构。
2、 根据权利要求 1所述的化学机械抛光心轴装置, 其特征在于所述 的四连杆升降机构的结构为: 具有上活动板 (20) 、 下活动板 (24 ) , 竖板 (39 ) 和抛光主轴自转机构 (2 ) 的外壳及转塔机构 (3 ) 的转动架 相铰链; 转动架和动力机械传动装置相连; 上活动板 (20) 或下活动板
(24) 和动力升降器相连。
3、 根据权利要求 2所述的化学机械抛光心轴装置, 其特征在于所述 的力升降器为气囊充放气式升降器, 其结构为: 固定板 (11 ) 固定在转 架上设的竖板 (39) 上, 压簧 (13 ) 和气囊充放气机构 (9 ) 分别固定在 固定板 (11 ) 的上下面上, 压簧 (13 ) 和气囊充放气机构 (9) 的另一端 分别与上活动板 (20) 、 下活动板 (24) 连接。
4、 根据权利要求 3所述的化学机械抛光心轴装置, 其特征在于所述 的四连杆升降机构中设有压力传感器 a (22 ) 及轴力控制闭环控制电路。
5、 根据权利要求 1所述的化学机械抛光的心轴装置, 其特征在于所 述的抛光心轴自转机构(2) 的结构为: 伺服电机(35 )通过减速器(14) 和心轴 (26) 相连, 心轴 (26) 通过圆锥滚子轴承 (46) 和心轴套 ( 10) 相连。
6、 根据权利要求 1、 2、 3、 4或 5所述的化学机械抛光心轴装置, 其特征在于所述的转塔机构 (3 ) 设有 2套或 3套以上的抛光心轴自转机 构 (2 )及四连杆升降机构; 每个四连杆升降机构均和转动架相连; 和转 动架相连的动力机械传动装置采用转塔多层轴系传动结构。
7、 根据权利要求 6所述的化学机械抛光的心轴装置, 其特征在于所 述的转塔多层轴系传动结构为: 塔轴 (18) 外装有第 2套式轴 (28 ) , 塔轴 (18) 通过第 1固定架 (17) 和第 1抛光心轴自转机构 (2 ) 相连, 第 1转动架 (19) 一端和第 1抛光心轴自转机构 (2 ) 相连, 另一端通过 轴承与第 2套式轴(28)相连;第 2套式轴(28)外装有第 3套式轴(29), 第 2套式轴 (28) 通过第 2固定架 (40) 和第 2抛光心轴自转机构 (2) 相连, 第 2转动架 (41)一端和第 2抛光心轴自转机构 (2) 相连, 另一 端通过轴承与第 3套式轴 (29) 相连或直接与第 2套式轴 (28) 相连。
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