CA2806138C - A spindle apparatus for chemical mechanical polishing - Google Patents
A spindle apparatus for chemical mechanical polishing Download PDFInfo
- Publication number
- CA2806138C CA2806138C CA2806138A CA2806138A CA2806138C CA 2806138 C CA2806138 C CA 2806138C CA 2806138 A CA2806138 A CA 2806138A CA 2806138 A CA2806138 A CA 2806138A CA 2806138 C CA2806138 C CA 2806138C
- Authority
- CA
- Canada
- Prior art keywords
- spindle
- polishing
- turret
- self
- rotating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
Abstract
A chemical-mechanical polishing mandrel device is disclosed. The device comprises polishing mandrel autorotation mechanisms (2), a turret mechanism (3) and silicon wafer absorption mechanisms, wherein the turret mechanism (3) connects with the polishing mandrel autorotation mechanisms (2) by four link elevating mechanisms. The invention can always keep polishing heads perpendicular to polishing tables (43), and has the advantages of simple structure, easy control for mandrel force, high machining precision, high work efficiency and convenient use; the invention has broad uses, and is particularly suitable for being used on chemical-mechanical polishing (CMP) equipments for silicon wafers, and is also suitable for being used on other machining equipments for processing semiconductor or other material with process requirements similar to CMP for silicon wafers.
Description
Agent Ref.: 78970/00001 1 A Spindle Apparatus for Chemical Mechanical Polishing
2 Description
3 FIELD OF INVENTION
4 The present invention relates to the technical field of equipments for chemical mechanical polishing, and particularly to a spindle apparatus used in chemical mechanical polishing spindle 6 equipments.
8 Chemical mechanical polishing (CMP) is a method for flattening or polishing a substrate of 9 semiconductor material or other kinds of material. During the process of CMP, the functions of a polishing head include picking up and rotating silicon wafers and polishing them on a polishing 11 pad. The pickup of wafers and the rotation of wafers are carried out by a wafer carrier. The 12 wafer carrier is fixed with the carrier flange plate of the spindle system by vacuum. The pickup 13 of wafers and the rotation of wafers are powered by the spindle system.
The spindle system is a 14 system for achieving precise control of spindle force during processes of connecting, lifting, rotating and polishing. The spindle apparatus and the carrier form a whole polishing head 16 system, which has various functions, including clamping wafers, generating downward pressure, 17 generating back pressure, adjusting pressure, rotating, alternating work stations, etc. Leverages 18 are used in traditional CMP spindle apparatus to perform the lift/drop of the polishing head. The 19 disadvantage of such an apparatus is that the polishing head is vertical to the polishing table only when the lever is horizontal. However, in practice, the polishing head needs to maintain a 21 constant vertical position to the polishing table. Therefore, such a traditional apparatus for 22 achieving lift/drop of the spindle by means of leverages requires high precision of the machining 23 and assembling of the machinery parts, and the spindle force is difficult to control. The spindle 24 apparatus for wafer CMP of the present invention ensures that the polishing head maintains a constant vertical position to the polishing table during the lifting process by using a four-bar 26 linkage mechanism. The spindle force may be controlled precisely by installing a pressure 27 sensor in the four-bar linkage mechanism along with closed-loop control technologies. The 28 present apparatus may use two or more polishing spindle self-rotating mechanisms with the 29 advantages of being compact and efficient. The problem of lines intertwining occurred during continuous rotation of the spindle is well solved by using the technology of rotary joint.
22330635.2 1 Agent Ref.: 78970/00001 2 The object of the present invention is to provide a spindle apparatus for chemical mechanical 3 polishing, which ensures that the polishing head maintains a constant vertical position to the 4 polishing table during the lifting / dropping processes, having the characteristics of being simple in structure, easy to control the spindle force, with high machining accuracy, high work efficiency 6 and excellent usability; the apparatus may be widely used, particularly in wafer CMP
7 equipments, as well as in other processing equipments of semiconductor materials or other 8 kinds of materials having similar processing requirements to CMP.
9 The principal technical solution of the apparatus of the present invention is as follows: a spindle apparatus for chemical mechanical polishing, comprising a polishing spindle self-rotating 11 mechanism, wherein a turret mechanism is provided, which is connected to the polishing 12 spindle self-rotating mechanism by a four-bar linkage lifting mechanism, and a silicon wafer 13 suction mechanism is provided.
14 The structure of said four-bar linkage lifting mechanism may be as follows: consisting of an upper active plate, a lower active plate, a vertical plate, the housing of the polishing spindle self-16 rotating mechanism is hinged to a turret block of the turret mechanism;
the turret block is 17 connected to a power mechanical transmission equipment; the upper active plate or the lower 18 active plate is connected to a power lifter.
19 Said power lifter is preferred to be a ballonet inflating deflating lifter, which moves stably and is easy to be controlled. A preferred structure thereof is that: a fixed plate is mounted on the 21 vertical plate disposed on the turret block, a compression spring and a ballonet inflating 22 deflating mechanism are respectively mounted on the top and bottom surfaces of the fixed 23 plate, the other end of the compression spring and the ballonet inflating deflating mechanism 24 are respectively connected to the upper active plate and the lower active plate.
Said power lifter may also be a piston inflating deflating gas (oil) lifter, or a motor mechanical 26 lifter, etc.
27 Said four-bar linkage is preferred to be provided with a pressure sensor a and a closed-loop 28 control circuit for controlling spindle forces.
22330635.2 2 Agent Ref.: 78970/00001 1 A preferred structure of said polishing spindle self-rotating mechanism is that: a servo motor is 2 connected to the spindle through a speed reducer, and the spindle is connected to a spindle 3 sleeve through a tapered roller bearing.
4 Said turret mechanism may have one or two or more sets (three sets included) of polishing spindle self-rotating mechanisms and four-bar linkage lifting mechanisms; each four-bar linkage 6 lifting mechanism is connected to a turret block; a turret-multilayer shafting transmission 7 mechanism is used for the power mechanical transmission equipment connected to the turret 8 block.
9 A preferred structure for said turret-multilayer shafting transmission mechanism is that: a second shaft sleeve is disposed outside a turret shaft, the turret shaft is connected to a first 11 polishing spindle self-rotating mechanism through a first mounting bracket, one end of a first 12 turret block is connected to the first polishing spindle self-rotating mechanism, the other end is 13 connected to a second shaft sleeve by a bearing; a third shaft sleeve is disposed outside the 14 second shaft sleeve, the second shaft sleeve is connected to a second polishing spindle self-rotating mechanism by a second mounting bracket, one end of the second mounting bracket is 16 connected to the second polishing spindle self-rotating mechanism, the other end is connected 17 to the third shaft sleeve by a bearing or is connected to the second shaft sleeve directly. Such 18 multilayer shafting transmissions mechanisms may be deduced by analogy.
19 A structure of a wafer suctioning and laying mechanism may be as follows: a regional back pressure is generated during wafer polishing by a gas channel; vacuum perform the suction of 21 fixing a carrier flange plate with the carrier and suctioning wafers (may be the same as prior art);
22 a fluid is introduced into a turret by a hose through a three-channel rotary joint connected to a 23 shaft of the turret mechanism, then the fluid is divided into two flows by a tube joint, the fluid 24 passing through the turret are then introduced into two polishing spindle self-rotating mechanisms through a six-channel rotary joint, finally, they are introduced into the carrier by 26 hoses and the fluid is controlled in such a way; the polished wafers will be placed on an 27 unloading table from the carrier stably and reliably.
28 A preferred power transmission circuit for the turret-multilayer shafting transmission mechanism 29 is as follows: a conducting slip ring associated with the turret, a rotary end of the conducting slip ring is fixed to a mounting bracket, the mounting bracket is installed on the turret shaft which 22330635.2 3 Agent Ref.: 78970/00001 1 rotates the rotary end of the conducting slip ring, as mentioned above, the turret shaft 2 simultaneously rotates the first polishing spindle self-rotating mechanism, as a result, different 3 voltages and electrical signals are introduced to the first polishing spindle self-rotating 4 mechanism by the slip ring. A towline is used to link the first polishing spindle self-rotating mechanism to the second polishing spindle rotating mechanism, so that the different voltages 6 and electric signals received by the first polishing spindle self-rotating mechanism may be 7 transmitted from the first polishing spindle self-rotating mechanism to the second polishing 8 spindle self-rotating mechanism.
9 The positive effects of the present invention are as follows: the problems existing in the prior art may be well solved by using this apparatus. The apparatus ensures that the polishing head 11 maintains constantly vertical to the polishing table during the lifting process, and has the 12 characters of being simple in structure, easy to control the spindle force, of high machining 13 accuracy, high work efficiency and excellent usability; the apparatus may use two or more 14 polishing spindle rotation mechanisms for achieving the targets of being flexible in usage, compact in structure and with high efficiency. The problem of lines intertwining occurred during 16 continuous rotation of the spindle is well solved by using the technology of rotary joint. The 17 apparatus may be widely used, particularly in equipments for wafer chemical mechanical 18 polishing, and may also be used in other equipments for processing semiconductor materials or 19 other kinds of materials having similar processing requirements to CMP.
The invention is explained in detail by reference to a preferred embodiment taken with the 21 accompanying drawings, and such an embodiment is not a limitation of the invention.
23 Figure 1 is a schematic diagram of the structure of a spindle device of a preferred embodiment 24 of the present invention.
Figure 2 is a front view of the polishing spindle shown in Figure 1.
26 Figure 3 is a three-dimensional graphics of the four-bar linkage mechanism shown in Figure 1.
27 Figure 4 is a trajectory chart of the ballonet inflating deflating mechanism shown in Figure 1.
28 Figure 5 is an installation sectional view of the spindle shown in Figure 1.
22330635.2 4 Agent Ref.: 78970/00001 1 Figure 6 is a front view of the turret shown in Figure 1.
2 Figure 7 is a sectional view of the turret shown in Figure 1.
3 Figure 8 is a block diagram of the controlling system for spindle force shown in Figure 1.
4 Figure 9 is a three-dimensional graphics of the adjusting of the spindle force shown in Figure 1.
Description of numerals in the figures: 1¨carrier, 2¨polishing spindle self-rotating mechanism 6 (when more than one, they may be respectively named as the first polishing spindle self-rotating 7 mechanism, the second polishing spindle self-rotating mechanism, and so on.), 3¨turret 8 system, 4¨six-channel rotary joint, 5¨synchronous band wheel, 6¨regulating block, 7-9 electrical motor (when more than one, they can be respectively named as the first electrical motor, the second electrical motor, and so on.), 8¨connecting bar, 9¨ballonet inflating 11 deflating mechanism, 10¨spindle sleeve, 11¨fixed plate, 12¨pressure spring adjusting block, 12 13¨pressure spring, 14¨speed reducer, 15¨air tap, 16¨three-channel rotary joint, 17¨the 13 first mounting bracket, 18¨turret shaft, 19¨the first turret block, 20¨upper active plate, 21-14 revolving joint flange, 22¨pressure sensor, 23¨proximity switch, 24¨lower active plate, 25-locknut, 26¨spindle, 27¨sensor bracket, 28¨the second sleeve shaft (or middle turret shaft), 16 29¨the third sleeve shaft (or outer-turret shaft), 30¨foundation bed, 31¨synchronous belt, 17 32¨cylinder joint, 33¨stop block support, 34¨stop block, 35¨servo motor, 36¨pressure nut, 18 37¨bearing, 38¨bearing bar, 39¨vertical plate, 40¨the second mounting bracket, 41¨the 19 second turret block, 42¨pressure sensor, 43¨polishing table, 44¨testing mounting plate, 45-carrier flange, 46--tapered roller bearing, 47¨seal, 48¨locknut, 49¨conducting slip ring, 50-21 mounting bracket, 51¨bearing A, 52¨band wheel; in Figure 4, H2¨the minimum installation 22 height of ballonet inflating deflating mechanism, H3¨the maximum installation height of ballonet 23 inflating deflating mechanism, X¨installation height of center of ballonet inflating deflating 24 mechanism, a¨obliquity range of ballonet inflating deflating mechanism.
DETAILED DESCRIPTION
26 Referring to Figure 1 to Figure 9, in a preferred embodiment, a spindle system and a carrier 1 27 form a whole polishing head system, which has various functions including clamping wafers, 28 generating down forces, generating back forces, adjusting pressures, rotating, alternating work 29 stations, etc. A spindle device comprises a polishing spindle self-rotating mechanism 2 and a 22330635.2 5 Agent Ref.: 78970/00001 1 turret mechanism 3. The functions of clamping wafers, alternating work stations and controlling 2 down force may be performed after the connection of the polishing spindle self-rotating 3 mechanism 2 and the carrier 1. The work stations for polishing spindle may be alternated after 4 the connection of a turret 3 and two polishing spindle self-rotating mechanisms 2, and the precise positioning may be achieved by a proximity switch 23 on a sensor bracket 27. The two 6 polishing spindle self-rotating mechanisms 2 normally rotate in one direction to process wafers, 7 each of them may work individually on a specific polishing table 43. A
controller of the polishing 8 spindle self-rotating mechanism 2 controls its rotation, lift/drop, back pressure and maintains 9 ring force, and that may be achieved by a programmable logic controller (PLC), the motion controller is mounted on one of the two polishing spindle self-rotating mechanisms 2 to rotate 11 both of them. The motion controller individually controls each of the two polishing spindle self-12 rotating mechanism 2, so that each of them may rotate individually. A
first polishing spindle self-13 rotating mechanism 2 may rotate while a second polishing spindle self-rotating mechanism 2 14 remains stationary and the second polishing spindle self-rotating mechanism 2 may rotate while the first polishing spindle self-rotating mechanism 2 remains stationary.
16 Figure 1 shows a schematic diagram of the structure of the spindle device, and Figure 2 shows 17 a front view of the polishing spindle self-rotating mechanism, which achieves the lift/drop and 18 rotation of the polishing spindle.
19 The lift/drop of the polishing spindle: the lift/drop of the polishing spindle is achieved by means of a four-bar linkage mechanism (as shown in Figure 3), referring to Figure 2 to Figure 3, a fixed 21 plate 11 is mounted on a vertical plate 39, a pressure spring 13 and a ballonet inflating deflating 22 mechanism 9 are respectively mounted at top and bottom surfaces of the fixed plate 11, the 23 other ends of the pressure spring 13 and ballonet inflating deflating mechanism 9 are 24 respectively connected to an upper active plate 20 and a lower active plate 24, the upper and lower active plates 20 and 24 are respectively installed on the four-bar linkage mechanism 26 connected to a spindle 26, the spindle 26 is balanced on the pressure spring 13 and ballonet 27 inflating deflating mechanism 9, the lift of spindle 26 is performed by the inflation of the ballonet 28 inflating deflating mechanism 9, and the drop of spindle 26 is performed by the deflation of the 29 ballonet inflating deflating mechanism 9, the above process also controls the spindle force.
22330635.2 6 Agent Ret.: 78970/00001 1 The ballonet inflating deflating mechanism 9 has a simple structure of two metal plates fastened 2 to a rubber ballonet. The cylinder will be a gas spring when the ballonet inflating deflating 3 mechanism 9 maintains inflating. The ballonet inflating deflating mechanism has the following 4 characteristics: it exhibits good flexility; the angle of tilting lifting angle achieves 30 ; in the meantime, as shown in Figure 4, the travel route of the ballonet inflating deflating mechanism 6 may be described as a circular trajectory, of which the obliquity a is within a maximum tilting 7 angle of 30 . The problem of lateral shift of the carrier occurred during the process of lift/drop of 8 the four-bar linkage may be well solved by using the ballonet inflating deflating mechanism.
9 The self-rotation of the polishing spindle: a servo motor 35 rotates the spindle 26 by a speed reducer 14, Figure 5 shows the installation of the spindle 26 and a tapered roller bearing 46.
11 The revolution of the polishing spindle: as shown in Figure 6, the first electrical motor 7 rotates a 12 band wheel 52 through a synchronous belt 31, the band wheel 52 rotates the turret shaft 18, 13 then the turret shaft 18 rotates the first polishing spindle self-rotating mechanism 2 14 independently through the first mounting bracket 17 and the first turret bracket 19 respectively;
in a similar way, the second electrical motor 7 rotates the other band wheel through the other 16 synchronous belt, the other bank wheel rotates the second sleeve shaft 28, then the second 17 sleeve shaft 28 rotates independently the second polishing spindle self-rotating mechanism 2 18 through the second turret bracket 41 and the second mounting bracket 40 respectively, in such 19 a way, the two polishing spindle self-rotating mechanisms 2 revolve around the turret 3 independently.
21 Figure 8 is a block diagram of a controlling system for spindle force.
The function of the system 22 is to have the spindle force applied to be equal to a predetermined spindle force. The spindle 23 force applied is measured by a pressure sensor, and the data fed back is compared with the 24 predetermined spindle force, after calculating according to certain regulations by a PLC
controller, signals output are accordingly input into an electrical proportional valve to control the 26 ballonet inflating deflating mechanism, in such a way, the target of controlling the spindle force 27 is achieved.
28 To control the spindle force precisely: the internal pressure of the ballonet inflating deflating 29 mechanism 9 leading to the spindle 26 is precisely controlled by the electrical proportional valve, and thereby the downward force of spindle is controlled. A pressure sensor a22 is 22330635.2 7 Agent Ref.: 78970/00001 1 installed at the bottom of the ballonet inflating deflating mechanism 9, a closed-loop control is 2 formed by the pressure sensor a22 with the electrical proportional valve, in such a way, the 3 controlling accuracy is improved.
4 The calibration of the electrical proportional valve: the pressure scope of the ballonet inflating deflating mechanism being 0-0.7Mpa is figured out based on the downward force, and 6 controlling signals of electrical proportional valve are 4-20mA, connect the output-end of the 7 electrical proportional valve to the pressure sensor 22, and the output is set to 0.001Mpa 8 corresponding to a 4mA input; the pressure is set to 0.8Mpa corresponding to a 20mA input, the 9 relationship between the electrical proportional valve and the output may be figured out based on the above two values.
11 The calibration of spindle downward force: unload the carrier 1 from the polishing spindle self-12 rotating mechanism 2 and install a testing mounting plate as shown in Figure 9, then press the 13 testing mounting plate 44 on a pressure sensor b42, the total height of the pressure sensor b42 14 and testing mounting plate 44 is equal to the height of the carrier.
Based on the relationship between the input and output of electrical proportional valve obtained above, input a pressure 16 value every 0.05Mpa between 0 and 0.8Mpa, then a group of pressure values is obtained from 17 the pressure sensor b42, additionally, a group of pressure values may further be obtained from 18 the pressure sensor a22 at the bottom of the ballonet inflating deflating mechanism 9, based on 19 these values, the relationship between the pressure output of the electrical proportional valve and the downward force of the spindle, and the relationship between the downward force and 21 the values measured by pressure sensor a22 at the bottom of ballonet inflating deflating 22 mechanism 9 may be obtained, the spindle downward force may be calibrated according to 23 such relationships.
24 The control of the spindle fluid: through a tube joint connected to a three-channel rotary joint 16, a fluid flows into a hose of the turret shaft 18 of the turret mechanism 3, the fluid passing 26 through the turret shaft 18 of the turret mechanism 3 is divided into two flows, which are 27 introduced into a hose of the spindle 26 through a six-channel rotary joint 4, the fluids are 28 vacuum, compressed air, and deionized water, etc, water channel, gas channel and vacuum are 29 connected to the carrier through a rotary joint 4, the spindle 26 and a carrier flange 45, in which four channels of nitrogen produce three regions of back pressure and one channel maintains 22330635.2 8 Age! 47g-9%160001 =
1 the ring force, two channels of vacuum achieve the wafer suction and the fixture function of the 2 spindle 26 and the carrier 1, wherein the one channel of nitrogen producing the back pressures 3 uses the same channel as the one channel of vacuum suctioning wafers, which is controlled by 4 a solenoid valve. The water flow is controlled by a proportional valve, and the pressure of the compressed air is controlled by the electrical proportional valve.
6 In this embodiment the system consisting of the polishing spindle self-rotating mechanism and 7 the carrier depends on vacuum to perform the fuction of lifting /droping wafers and adjusting 8 spindle force, and the turret mechanism revolves the polishing spindle self-rotating mechanism 9 by means of the synchronous belt and the turret block to change work stations. In the polishing spindle lifting mechanism, the precise control of spindle force may be achieved by using the 11 pressure sensor and the closed-loop controlling technologies. The fluid is accessed into the 12 turret mechanism passing through the three-channel rotary joint, the fluid passing through the 13 turret mechanism is divided into two flows and are introduced to the carrier passing through the 14 six-channel rotary joint, the spindle and the spindle flange for achieving functions of generating back pressures, suctioning wafers and cleaning wafers, etc. during the polishing process. The 16 conducting slip ring on the top of turret is used for providing and transmitting electrical power 17 (different voltages) and electrical signals for communication between the polishing spindle 18 controller and the polishing spindle; the problem of lines intertwining occurred during continuous 19 rotation of the spindles may be solved by the technologies of rotary joint and conducting slip ring. Two or more polishing spindle self-rotating mechanisms may be used in this system, 21 further they may be used individually based on the actual requirements for the purpose of being 22 flexible in usage and compact in mechanisms.
23 The present invention is not limited to the preferred embodiments described above and may 24 include modifications, equally effective replacements and improvements made within principles of the present invention. The claims should be given the broadest interpretation consistent with 26 the description as a whole.
22961735.1 = 9
8 Chemical mechanical polishing (CMP) is a method for flattening or polishing a substrate of 9 semiconductor material or other kinds of material. During the process of CMP, the functions of a polishing head include picking up and rotating silicon wafers and polishing them on a polishing 11 pad. The pickup of wafers and the rotation of wafers are carried out by a wafer carrier. The 12 wafer carrier is fixed with the carrier flange plate of the spindle system by vacuum. The pickup 13 of wafers and the rotation of wafers are powered by the spindle system.
The spindle system is a 14 system for achieving precise control of spindle force during processes of connecting, lifting, rotating and polishing. The spindle apparatus and the carrier form a whole polishing head 16 system, which has various functions, including clamping wafers, generating downward pressure, 17 generating back pressure, adjusting pressure, rotating, alternating work stations, etc. Leverages 18 are used in traditional CMP spindle apparatus to perform the lift/drop of the polishing head. The 19 disadvantage of such an apparatus is that the polishing head is vertical to the polishing table only when the lever is horizontal. However, in practice, the polishing head needs to maintain a 21 constant vertical position to the polishing table. Therefore, such a traditional apparatus for 22 achieving lift/drop of the spindle by means of leverages requires high precision of the machining 23 and assembling of the machinery parts, and the spindle force is difficult to control. The spindle 24 apparatus for wafer CMP of the present invention ensures that the polishing head maintains a constant vertical position to the polishing table during the lifting process by using a four-bar 26 linkage mechanism. The spindle force may be controlled precisely by installing a pressure 27 sensor in the four-bar linkage mechanism along with closed-loop control technologies. The 28 present apparatus may use two or more polishing spindle self-rotating mechanisms with the 29 advantages of being compact and efficient. The problem of lines intertwining occurred during continuous rotation of the spindle is well solved by using the technology of rotary joint.
22330635.2 1 Agent Ref.: 78970/00001 2 The object of the present invention is to provide a spindle apparatus for chemical mechanical 3 polishing, which ensures that the polishing head maintains a constant vertical position to the 4 polishing table during the lifting / dropping processes, having the characteristics of being simple in structure, easy to control the spindle force, with high machining accuracy, high work efficiency 6 and excellent usability; the apparatus may be widely used, particularly in wafer CMP
7 equipments, as well as in other processing equipments of semiconductor materials or other 8 kinds of materials having similar processing requirements to CMP.
9 The principal technical solution of the apparatus of the present invention is as follows: a spindle apparatus for chemical mechanical polishing, comprising a polishing spindle self-rotating 11 mechanism, wherein a turret mechanism is provided, which is connected to the polishing 12 spindle self-rotating mechanism by a four-bar linkage lifting mechanism, and a silicon wafer 13 suction mechanism is provided.
14 The structure of said four-bar linkage lifting mechanism may be as follows: consisting of an upper active plate, a lower active plate, a vertical plate, the housing of the polishing spindle self-16 rotating mechanism is hinged to a turret block of the turret mechanism;
the turret block is 17 connected to a power mechanical transmission equipment; the upper active plate or the lower 18 active plate is connected to a power lifter.
19 Said power lifter is preferred to be a ballonet inflating deflating lifter, which moves stably and is easy to be controlled. A preferred structure thereof is that: a fixed plate is mounted on the 21 vertical plate disposed on the turret block, a compression spring and a ballonet inflating 22 deflating mechanism are respectively mounted on the top and bottom surfaces of the fixed 23 plate, the other end of the compression spring and the ballonet inflating deflating mechanism 24 are respectively connected to the upper active plate and the lower active plate.
Said power lifter may also be a piston inflating deflating gas (oil) lifter, or a motor mechanical 26 lifter, etc.
27 Said four-bar linkage is preferred to be provided with a pressure sensor a and a closed-loop 28 control circuit for controlling spindle forces.
22330635.2 2 Agent Ref.: 78970/00001 1 A preferred structure of said polishing spindle self-rotating mechanism is that: a servo motor is 2 connected to the spindle through a speed reducer, and the spindle is connected to a spindle 3 sleeve through a tapered roller bearing.
4 Said turret mechanism may have one or two or more sets (three sets included) of polishing spindle self-rotating mechanisms and four-bar linkage lifting mechanisms; each four-bar linkage 6 lifting mechanism is connected to a turret block; a turret-multilayer shafting transmission 7 mechanism is used for the power mechanical transmission equipment connected to the turret 8 block.
9 A preferred structure for said turret-multilayer shafting transmission mechanism is that: a second shaft sleeve is disposed outside a turret shaft, the turret shaft is connected to a first 11 polishing spindle self-rotating mechanism through a first mounting bracket, one end of a first 12 turret block is connected to the first polishing spindle self-rotating mechanism, the other end is 13 connected to a second shaft sleeve by a bearing; a third shaft sleeve is disposed outside the 14 second shaft sleeve, the second shaft sleeve is connected to a second polishing spindle self-rotating mechanism by a second mounting bracket, one end of the second mounting bracket is 16 connected to the second polishing spindle self-rotating mechanism, the other end is connected 17 to the third shaft sleeve by a bearing or is connected to the second shaft sleeve directly. Such 18 multilayer shafting transmissions mechanisms may be deduced by analogy.
19 A structure of a wafer suctioning and laying mechanism may be as follows: a regional back pressure is generated during wafer polishing by a gas channel; vacuum perform the suction of 21 fixing a carrier flange plate with the carrier and suctioning wafers (may be the same as prior art);
22 a fluid is introduced into a turret by a hose through a three-channel rotary joint connected to a 23 shaft of the turret mechanism, then the fluid is divided into two flows by a tube joint, the fluid 24 passing through the turret are then introduced into two polishing spindle self-rotating mechanisms through a six-channel rotary joint, finally, they are introduced into the carrier by 26 hoses and the fluid is controlled in such a way; the polished wafers will be placed on an 27 unloading table from the carrier stably and reliably.
28 A preferred power transmission circuit for the turret-multilayer shafting transmission mechanism 29 is as follows: a conducting slip ring associated with the turret, a rotary end of the conducting slip ring is fixed to a mounting bracket, the mounting bracket is installed on the turret shaft which 22330635.2 3 Agent Ref.: 78970/00001 1 rotates the rotary end of the conducting slip ring, as mentioned above, the turret shaft 2 simultaneously rotates the first polishing spindle self-rotating mechanism, as a result, different 3 voltages and electrical signals are introduced to the first polishing spindle self-rotating 4 mechanism by the slip ring. A towline is used to link the first polishing spindle self-rotating mechanism to the second polishing spindle rotating mechanism, so that the different voltages 6 and electric signals received by the first polishing spindle self-rotating mechanism may be 7 transmitted from the first polishing spindle self-rotating mechanism to the second polishing 8 spindle self-rotating mechanism.
9 The positive effects of the present invention are as follows: the problems existing in the prior art may be well solved by using this apparatus. The apparatus ensures that the polishing head 11 maintains constantly vertical to the polishing table during the lifting process, and has the 12 characters of being simple in structure, easy to control the spindle force, of high machining 13 accuracy, high work efficiency and excellent usability; the apparatus may use two or more 14 polishing spindle rotation mechanisms for achieving the targets of being flexible in usage, compact in structure and with high efficiency. The problem of lines intertwining occurred during 16 continuous rotation of the spindle is well solved by using the technology of rotary joint. The 17 apparatus may be widely used, particularly in equipments for wafer chemical mechanical 18 polishing, and may also be used in other equipments for processing semiconductor materials or 19 other kinds of materials having similar processing requirements to CMP.
The invention is explained in detail by reference to a preferred embodiment taken with the 21 accompanying drawings, and such an embodiment is not a limitation of the invention.
23 Figure 1 is a schematic diagram of the structure of a spindle device of a preferred embodiment 24 of the present invention.
Figure 2 is a front view of the polishing spindle shown in Figure 1.
26 Figure 3 is a three-dimensional graphics of the four-bar linkage mechanism shown in Figure 1.
27 Figure 4 is a trajectory chart of the ballonet inflating deflating mechanism shown in Figure 1.
28 Figure 5 is an installation sectional view of the spindle shown in Figure 1.
22330635.2 4 Agent Ref.: 78970/00001 1 Figure 6 is a front view of the turret shown in Figure 1.
2 Figure 7 is a sectional view of the turret shown in Figure 1.
3 Figure 8 is a block diagram of the controlling system for spindle force shown in Figure 1.
4 Figure 9 is a three-dimensional graphics of the adjusting of the spindle force shown in Figure 1.
Description of numerals in the figures: 1¨carrier, 2¨polishing spindle self-rotating mechanism 6 (when more than one, they may be respectively named as the first polishing spindle self-rotating 7 mechanism, the second polishing spindle self-rotating mechanism, and so on.), 3¨turret 8 system, 4¨six-channel rotary joint, 5¨synchronous band wheel, 6¨regulating block, 7-9 electrical motor (when more than one, they can be respectively named as the first electrical motor, the second electrical motor, and so on.), 8¨connecting bar, 9¨ballonet inflating 11 deflating mechanism, 10¨spindle sleeve, 11¨fixed plate, 12¨pressure spring adjusting block, 12 13¨pressure spring, 14¨speed reducer, 15¨air tap, 16¨three-channel rotary joint, 17¨the 13 first mounting bracket, 18¨turret shaft, 19¨the first turret block, 20¨upper active plate, 21-14 revolving joint flange, 22¨pressure sensor, 23¨proximity switch, 24¨lower active plate, 25-locknut, 26¨spindle, 27¨sensor bracket, 28¨the second sleeve shaft (or middle turret shaft), 16 29¨the third sleeve shaft (or outer-turret shaft), 30¨foundation bed, 31¨synchronous belt, 17 32¨cylinder joint, 33¨stop block support, 34¨stop block, 35¨servo motor, 36¨pressure nut, 18 37¨bearing, 38¨bearing bar, 39¨vertical plate, 40¨the second mounting bracket, 41¨the 19 second turret block, 42¨pressure sensor, 43¨polishing table, 44¨testing mounting plate, 45-carrier flange, 46--tapered roller bearing, 47¨seal, 48¨locknut, 49¨conducting slip ring, 50-21 mounting bracket, 51¨bearing A, 52¨band wheel; in Figure 4, H2¨the minimum installation 22 height of ballonet inflating deflating mechanism, H3¨the maximum installation height of ballonet 23 inflating deflating mechanism, X¨installation height of center of ballonet inflating deflating 24 mechanism, a¨obliquity range of ballonet inflating deflating mechanism.
DETAILED DESCRIPTION
26 Referring to Figure 1 to Figure 9, in a preferred embodiment, a spindle system and a carrier 1 27 form a whole polishing head system, which has various functions including clamping wafers, 28 generating down forces, generating back forces, adjusting pressures, rotating, alternating work 29 stations, etc. A spindle device comprises a polishing spindle self-rotating mechanism 2 and a 22330635.2 5 Agent Ref.: 78970/00001 1 turret mechanism 3. The functions of clamping wafers, alternating work stations and controlling 2 down force may be performed after the connection of the polishing spindle self-rotating 3 mechanism 2 and the carrier 1. The work stations for polishing spindle may be alternated after 4 the connection of a turret 3 and two polishing spindle self-rotating mechanisms 2, and the precise positioning may be achieved by a proximity switch 23 on a sensor bracket 27. The two 6 polishing spindle self-rotating mechanisms 2 normally rotate in one direction to process wafers, 7 each of them may work individually on a specific polishing table 43. A
controller of the polishing 8 spindle self-rotating mechanism 2 controls its rotation, lift/drop, back pressure and maintains 9 ring force, and that may be achieved by a programmable logic controller (PLC), the motion controller is mounted on one of the two polishing spindle self-rotating mechanisms 2 to rotate 11 both of them. The motion controller individually controls each of the two polishing spindle self-12 rotating mechanism 2, so that each of them may rotate individually. A
first polishing spindle self-13 rotating mechanism 2 may rotate while a second polishing spindle self-rotating mechanism 2 14 remains stationary and the second polishing spindle self-rotating mechanism 2 may rotate while the first polishing spindle self-rotating mechanism 2 remains stationary.
16 Figure 1 shows a schematic diagram of the structure of the spindle device, and Figure 2 shows 17 a front view of the polishing spindle self-rotating mechanism, which achieves the lift/drop and 18 rotation of the polishing spindle.
19 The lift/drop of the polishing spindle: the lift/drop of the polishing spindle is achieved by means of a four-bar linkage mechanism (as shown in Figure 3), referring to Figure 2 to Figure 3, a fixed 21 plate 11 is mounted on a vertical plate 39, a pressure spring 13 and a ballonet inflating deflating 22 mechanism 9 are respectively mounted at top and bottom surfaces of the fixed plate 11, the 23 other ends of the pressure spring 13 and ballonet inflating deflating mechanism 9 are 24 respectively connected to an upper active plate 20 and a lower active plate 24, the upper and lower active plates 20 and 24 are respectively installed on the four-bar linkage mechanism 26 connected to a spindle 26, the spindle 26 is balanced on the pressure spring 13 and ballonet 27 inflating deflating mechanism 9, the lift of spindle 26 is performed by the inflation of the ballonet 28 inflating deflating mechanism 9, and the drop of spindle 26 is performed by the deflation of the 29 ballonet inflating deflating mechanism 9, the above process also controls the spindle force.
22330635.2 6 Agent Ret.: 78970/00001 1 The ballonet inflating deflating mechanism 9 has a simple structure of two metal plates fastened 2 to a rubber ballonet. The cylinder will be a gas spring when the ballonet inflating deflating 3 mechanism 9 maintains inflating. The ballonet inflating deflating mechanism has the following 4 characteristics: it exhibits good flexility; the angle of tilting lifting angle achieves 30 ; in the meantime, as shown in Figure 4, the travel route of the ballonet inflating deflating mechanism 6 may be described as a circular trajectory, of which the obliquity a is within a maximum tilting 7 angle of 30 . The problem of lateral shift of the carrier occurred during the process of lift/drop of 8 the four-bar linkage may be well solved by using the ballonet inflating deflating mechanism.
9 The self-rotation of the polishing spindle: a servo motor 35 rotates the spindle 26 by a speed reducer 14, Figure 5 shows the installation of the spindle 26 and a tapered roller bearing 46.
11 The revolution of the polishing spindle: as shown in Figure 6, the first electrical motor 7 rotates a 12 band wheel 52 through a synchronous belt 31, the band wheel 52 rotates the turret shaft 18, 13 then the turret shaft 18 rotates the first polishing spindle self-rotating mechanism 2 14 independently through the first mounting bracket 17 and the first turret bracket 19 respectively;
in a similar way, the second electrical motor 7 rotates the other band wheel through the other 16 synchronous belt, the other bank wheel rotates the second sleeve shaft 28, then the second 17 sleeve shaft 28 rotates independently the second polishing spindle self-rotating mechanism 2 18 through the second turret bracket 41 and the second mounting bracket 40 respectively, in such 19 a way, the two polishing spindle self-rotating mechanisms 2 revolve around the turret 3 independently.
21 Figure 8 is a block diagram of a controlling system for spindle force.
The function of the system 22 is to have the spindle force applied to be equal to a predetermined spindle force. The spindle 23 force applied is measured by a pressure sensor, and the data fed back is compared with the 24 predetermined spindle force, after calculating according to certain regulations by a PLC
controller, signals output are accordingly input into an electrical proportional valve to control the 26 ballonet inflating deflating mechanism, in such a way, the target of controlling the spindle force 27 is achieved.
28 To control the spindle force precisely: the internal pressure of the ballonet inflating deflating 29 mechanism 9 leading to the spindle 26 is precisely controlled by the electrical proportional valve, and thereby the downward force of spindle is controlled. A pressure sensor a22 is 22330635.2 7 Agent Ref.: 78970/00001 1 installed at the bottom of the ballonet inflating deflating mechanism 9, a closed-loop control is 2 formed by the pressure sensor a22 with the electrical proportional valve, in such a way, the 3 controlling accuracy is improved.
4 The calibration of the electrical proportional valve: the pressure scope of the ballonet inflating deflating mechanism being 0-0.7Mpa is figured out based on the downward force, and 6 controlling signals of electrical proportional valve are 4-20mA, connect the output-end of the 7 electrical proportional valve to the pressure sensor 22, and the output is set to 0.001Mpa 8 corresponding to a 4mA input; the pressure is set to 0.8Mpa corresponding to a 20mA input, the 9 relationship between the electrical proportional valve and the output may be figured out based on the above two values.
11 The calibration of spindle downward force: unload the carrier 1 from the polishing spindle self-12 rotating mechanism 2 and install a testing mounting plate as shown in Figure 9, then press the 13 testing mounting plate 44 on a pressure sensor b42, the total height of the pressure sensor b42 14 and testing mounting plate 44 is equal to the height of the carrier.
Based on the relationship between the input and output of electrical proportional valve obtained above, input a pressure 16 value every 0.05Mpa between 0 and 0.8Mpa, then a group of pressure values is obtained from 17 the pressure sensor b42, additionally, a group of pressure values may further be obtained from 18 the pressure sensor a22 at the bottom of the ballonet inflating deflating mechanism 9, based on 19 these values, the relationship between the pressure output of the electrical proportional valve and the downward force of the spindle, and the relationship between the downward force and 21 the values measured by pressure sensor a22 at the bottom of ballonet inflating deflating 22 mechanism 9 may be obtained, the spindle downward force may be calibrated according to 23 such relationships.
24 The control of the spindle fluid: through a tube joint connected to a three-channel rotary joint 16, a fluid flows into a hose of the turret shaft 18 of the turret mechanism 3, the fluid passing 26 through the turret shaft 18 of the turret mechanism 3 is divided into two flows, which are 27 introduced into a hose of the spindle 26 through a six-channel rotary joint 4, the fluids are 28 vacuum, compressed air, and deionized water, etc, water channel, gas channel and vacuum are 29 connected to the carrier through a rotary joint 4, the spindle 26 and a carrier flange 45, in which four channels of nitrogen produce three regions of back pressure and one channel maintains 22330635.2 8 Age! 47g-9%160001 =
1 the ring force, two channels of vacuum achieve the wafer suction and the fixture function of the 2 spindle 26 and the carrier 1, wherein the one channel of nitrogen producing the back pressures 3 uses the same channel as the one channel of vacuum suctioning wafers, which is controlled by 4 a solenoid valve. The water flow is controlled by a proportional valve, and the pressure of the compressed air is controlled by the electrical proportional valve.
6 In this embodiment the system consisting of the polishing spindle self-rotating mechanism and 7 the carrier depends on vacuum to perform the fuction of lifting /droping wafers and adjusting 8 spindle force, and the turret mechanism revolves the polishing spindle self-rotating mechanism 9 by means of the synchronous belt and the turret block to change work stations. In the polishing spindle lifting mechanism, the precise control of spindle force may be achieved by using the 11 pressure sensor and the closed-loop controlling technologies. The fluid is accessed into the 12 turret mechanism passing through the three-channel rotary joint, the fluid passing through the 13 turret mechanism is divided into two flows and are introduced to the carrier passing through the 14 six-channel rotary joint, the spindle and the spindle flange for achieving functions of generating back pressures, suctioning wafers and cleaning wafers, etc. during the polishing process. The 16 conducting slip ring on the top of turret is used for providing and transmitting electrical power 17 (different voltages) and electrical signals for communication between the polishing spindle 18 controller and the polishing spindle; the problem of lines intertwining occurred during continuous 19 rotation of the spindles may be solved by the technologies of rotary joint and conducting slip ring. Two or more polishing spindle self-rotating mechanisms may be used in this system, 21 further they may be used individually based on the actual requirements for the purpose of being 22 flexible in usage and compact in mechanisms.
23 The present invention is not limited to the preferred embodiments described above and may 24 include modifications, equally effective replacements and improvements made within principles of the present invention. The claims should be given the broadest interpretation consistent with 26 the description as a whole.
22961735.1 = 9
Claims (6)
1. A spindle apparatus for chemical mechanical polishing, comprising a polishing spindle self-rotating mechanisms (2), wherein a turret mechanism (3) is provided, the turret mechanism (3) is connected to the polishing spindle self-rotating mechanism (2) by a four-bar linkage lifting mechanism, and a silicon suctioning mechanism is provided;
wherein a first shaft sleeve (28) is installed outside a turret shaft (18), the turret shaft (18) is connected to a first of said polishing spindle self-rotating mechanisms (2) through a first mounting bracket (17), one end of a first turret block (19) is connected to the first polishing spindle self- rotating mechanism (2), the other end is connected to the first shaft sleeve (28) by a bearing; a second shaft sleeve (29) is installed outside the first shaft sleeve (28), the first shaft sleeve (28) is connected to a second of said polishing spindle self-rotating mechanisms (2) by a second mounting bracket (40), one end of a second turret block (41) is connected to the second polishing spindle self-rotating mechanism (2), the other end is connected to the second shaft sleeve (29) by a bearing or is connected to the first shaft sleeve (28) directly.
wherein a first shaft sleeve (28) is installed outside a turret shaft (18), the turret shaft (18) is connected to a first of said polishing spindle self-rotating mechanisms (2) through a first mounting bracket (17), one end of a first turret block (19) is connected to the first polishing spindle self- rotating mechanism (2), the other end is connected to the first shaft sleeve (28) by a bearing; a second shaft sleeve (29) is installed outside the first shaft sleeve (28), the first shaft sleeve (28) is connected to a second of said polishing spindle self-rotating mechanisms (2) by a second mounting bracket (40), one end of a second turret block (41) is connected to the second polishing spindle self-rotating mechanism (2), the other end is connected to the second shaft sleeve (29) by a bearing or is connected to the first shaft sleeve (28) directly.
2. The spindle apparatus for chemical mechanical polishing of claim 1, wherein said four-bar linkage lifting mechanism comprises an upper active plate (20), a lower active plate (24) and a vertical plate (39);
wherein a housing of each said polishing spindle self-rotating mechanism is hinged to the first turret block or the second turret block of the turret mechanism (3);
wherein each said turret block is connected to a power mechanical transmission equipment; the upper active plate (20) or the lower active plate (24) is connected to a power lifter; and wherein the power lifter lifts and lowers the four-bar linkage, which then lifts and lowers the spindle.
wherein a housing of each said polishing spindle self-rotating mechanism is hinged to the first turret block or the second turret block of the turret mechanism (3);
wherein each said turret block is connected to a power mechanical transmission equipment; the upper active plate (20) or the lower active plate (24) is connected to a power lifter; and wherein the power lifter lifts and lowers the four-bar linkage, which then lifts and lowers the spindle.
3. The spindle apparatus for chemical mechanical polishing of claim 2, wherein said power lifter is a ballonet inflating deflating lifter, of which the structure is: a fixed plate (11) is mounted on the vertical plate (39) disposed on the first turret block or the second turret block, a compression spring (13) and the ballonet inflating deflating mechanism (9) are mounted on the top and bottom surfaces of the fixed plate (11) respectively, the other ends of the compression spring (13) and the ballonet inflating deflating mechanism (9) are connected to the upper active plate (20) and the lower active plate (24) respectively.
4. The spindle apparatus for chemical mechanical polishing of claim 3, wherein said four-bar linkage is provided with a pressure sensor and a closed-loop controlling circuit for controlling the spindle force.
5. The spindle apparatus for chemical mechanical polishing of claim 1, wherein the structure of each said polishing spindle self-rotating mechanism (2) is: a servo motor (35) is connected to a spindle (26) through a speed reducer (14), the spindle (26) is connected to a spindle sleeve (10) through a tapered roller bearing (46).
6. The spindle apparatus for chemical mechanical polishing of claim 1 or 2 or 3 or 4 or 5, wherein said turret mechanism (3) is provided with two or more sets of polishing spindle self-rotating mechanism (2) and four-bar linkage lifting mechanism; each four- bar linkage lifting mechanism is connected to the first turret block or the second turret block; a turret multilayer shafting transmission structure is used for the power mechanical transmission device connected to the turret block.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102498776A CN101972983B (en) | 2010-08-11 | 2010-08-11 | Chemically mechanical polishing mandrel device |
| CN201010249877.6 | 2010-08-11 | ||
| PCT/CN2010/001804 WO2012019334A1 (en) | 2010-08-11 | 2010-11-10 | Chemical-mechanical polishing mandrel device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2806138A1 CA2806138A1 (en) | 2012-02-16 |
| CA2806138C true CA2806138C (en) | 2017-10-31 |
Family
ID=43572907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2806138A Expired - Fee Related CA2806138C (en) | 2010-08-11 | 2010-11-10 | A spindle apparatus for chemical mechanical polishing |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN101972983B (en) |
| CA (1) | CA2806138C (en) |
| WO (1) | WO2012019334A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103506956B (en) * | 2013-09-26 | 2016-04-27 | 中国电子科技集团公司第四十五研究所 | A kind of for the polishing pad trimmer in wafer chemical CMP apparatus |
| CN108871892B (en) * | 2018-06-04 | 2020-12-08 | 中钢集团新型材料（浙江）有限公司 | Sample preparation method for graphite optical microstructure characterization |
| CN112129763B (en) * | 2020-09-15 | 2021-07-13 | 山东国晟环境科技有限公司 | Energy-saving electronic component surface treatment equipment with protective action |
| CN115056135B (en) * | 2022-06-20 | 2023-08-22 | 苏州富强科技有限公司 | Wafer processing device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195870A (en) * | 1984-10-16 | 1986-05-14 | Tipton Mfg Corp | Full automatic multifunction barrel polishing machine |
| JP3923107B2 (en) * | 1995-07-03 | 2007-05-30 | 株式会社Ｓｕｍｃｏ | Silicon wafer manufacturing method and apparatus |
| JP2003109923A (en) * | 2001-09-28 | 2003-04-11 | Sumitomo Mitsubishi Silicon Corp | Device for polishing semiconductor wafer |
| CN2683316Y (en) * | 2004-03-31 | 2005-03-09 | 朱生 | Large scale end-capping polisher |
| CN100544889C (en) * | 2006-09-06 | 2009-09-30 | 财团法人工业技术研究院 | Negative pressure vacuum adsorption device and use the edging device of this device |
| CN201235493Y (en) * | 2008-08-04 | 2009-05-13 | 江门市亚泰自动抛光科技有限公司 | Automatic polisher |
| CN101708593B (en) * | 2009-12-08 | 2013-01-09 | 中国电子科技集团公司第四十五研究所 | Chemical-mechanical polishing mandrel driving device |
-
2010
- 2010-08-11 CN CN2010102498776A patent/CN101972983B/en not_active Expired - Fee Related
- 2010-11-10 WO PCT/CN2010/001804 patent/WO2012019334A1/en active Application Filing
- 2010-11-10 CA CA2806138A patent/CA2806138C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101972983A (en) | 2011-02-16 |
| WO2012019334A1 (en) | 2012-02-16 |
| CN101972983B (en) | 2013-01-09 |
| CA2806138A1 (en) | 2012-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11583973B2 (en) | Polishing apparatus | |
| US5595529A (en) | Dual column abrading machine | |
| US7125313B2 (en) | Apparatus and method for abrading a workpiece | |
| CN100513076C (en) | Polishing apparatus and polishing method | |
| CA2806138C (en) | A spindle apparatus for chemical mechanical polishing | |
| EP1851002B1 (en) | Polishing apparatus and polishing method | |
| CN103817589B (en) | Base plate keeping device and lapping device | |
| US20140170938A1 (en) | Flexible diaphragm combination floating and rigid abrading workholder | |
| WO2021248951A1 (en) | Substrate thinning method, substrate thinning device, and operating method thereof | |
| US9573241B2 (en) | Polishing apparatus and polishing method | |
| CN104786139A (en) | Substrate holding apparatus and polishing apparatus | |
| WO2018200165A1 (en) | Cmp machine with improved throughput and process flexibility | |
| CN105479325A (en) | Partition pressing device and method suitable for large single-face grinding polishing device | |
| CN106112571A (en) | A kind of numerical-control equal-division rotary table | |
| US20040134287A1 (en) | Polishing head test station | |
| CN101708593A (en) | Chemical-mechanical polishing mandrel driving device | |
| CN109397031A (en) | A kind of rotary stone machining equipment | |
| CN103692331A (en) | Workbench of curved surface polishing machine | |
| CN210412886U (en) | Multi-station exchange table of numerical control worm grinding wheel gear grinding machine | |
| CN210908614U (en) | Robot surfacing positioning tool for sealing surfaces of valves with multiple specifications | |
| CN203993559U (en) | Lapping liquid supply system and lapping device | |
| CN203680003U (en) | Polishing device of curved polishing machine | |
| CN211992316U (en) | Multi-shaft polishing machine | |
| CN203680007U (en) | Working platform of cambered polishing machine | |
| CN201325004Y (en) | Bevel gearing drive two-station face lapping mill |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20150210 |
|
| MKLA | Lapsed |
Effective date: 20210831 |
|
| MKLA | Lapsed |
Effective date: 20191112 |