WO2011161976A1 - 炭化珪素基板の製造方法および製造装置 - Google Patents
炭化珪素基板の製造方法および製造装置 Download PDFInfo
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- WO2011161976A1 WO2011161976A1 PCT/JP2011/050142 JP2011050142W WO2011161976A1 WO 2011161976 A1 WO2011161976 A1 WO 2011161976A1 JP 2011050142 W JP2011050142 W JP 2011050142W WO 2011161976 A1 WO2011161976 A1 WO 2011161976A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 263
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000013078 crystal Substances 0.000 claims abstract description 120
- 238000003780 insertion Methods 0.000 claims abstract description 18
- 230000037431 insertion Effects 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 32
- 238000005192 partition Methods 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 238000000859 sublimation Methods 0.000 claims description 15
- 230000008022 sublimation Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 238000010000 carbonizing Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 24
- 230000015556 catabolic process Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Definitions
- the insertion portion includes a protective film formed on a surface of each of the second single crystal substrate group opposite to the surface facing the second base substrate.
- the protective film includes at least one of a film formed by carbonizing an organic film, a carbon film, a diamond-like carbon film, and a diamond film.
- the heat resistance which can endure the said heating can be provided to a protective film.
- the reactivity of the protective film with respect to silicon carbide can be reduced.
- the back surface of each of the first single crystal substrate groups 10a and the first base substrate 30a face each other, and each of the second single crystal substrate groups 10b
- the back surface and the second base substrate are opposed to each other, and the back surface of each of the third single crystal substrate group 10c and the third base substrate 30c are opposed to each other.
- the single crystal substrates 11 to 19 included in each of the first to third single crystal substrate groups 10a to 10c are arranged in a matrix, for example, as shown in FIG.
- a resist film having a pattern is formed on oxide film 126 by using a photolithography method. Using this resist film as a mask, portions of oxide film 126 located on n + region 124 and p + region 125 are removed by etching. As a result, an opening is formed in the oxide film 126. Next, a conductor film is formed in contact with each of n + region 124 and p + region 125 in this opening. Next, by removing the resist film, the portion of the conductor film located on the resist film is removed (lifted off).
- the conductor film may be a metal film, and is made of nickel (Ni), for example. As a result of this lift-off, the source electrode 111 is formed.
Abstract
Description
(実施の形態1)
図1および図2に示すように、本実施の形態の炭化珪素基板81は、炭化珪素から作られたベース基板30と、炭化珪素から作られた単結晶基板群10とを有する。単結晶基板群10は単結晶基板11~19を有する。
主に図6を参照して、本実施の形態においては積層体TX(図4:実施の形態1)の代わりに積層体TYが用いられる。積層体TYの挿入部60Yは保護膜60fを有するが仕切部材60p(図4)を有しない。
本実施の形態においては、炭化珪素基板81(図1および図2)を用いた半導体装置の製造について説明する。なお説明を簡単にするために炭化珪素基板81が有する単結晶基板11~19のうち単結晶基板11にのみ言及する場合があるが、他の単結晶基板12~19の各々もほぼ同様に扱われる。
Claims (7)
- 炭化珪素から作られた第1および第2の単結晶基板群(10a,10b)と、炭化珪素から作られた第1および第2のベース基板(30a,30b)と、炭化珪素の昇華温度において固体状態を有する材料から作られた挿入部(60X)とを含む積層体(TX)を準備する工程を備え、
前記積層体を準備する工程は、前記第1の単結晶基板群の各々と前記第1のベース基板とが互いに対向し、かつ前記第2の単結晶基板群の各々と前記第2のベース基板とが互いに対向し、かつ前記第1の単結晶基板群と前記第1のベース基板と前記挿入部と前記第2の単結晶基板群と前記第2のベース基板とが一の方向に向かってこの順で積み重なるように行われ、さらに
前記積層体の温度が炭化珪素が昇華し得る温度に達するように、かつ前記積層体中において前記一の方向に向かって温度が高くなるような温度勾配が形成されるように前記積層体を加熱する工程を備える、炭化珪素基板(81)の製造方法。 - 前記温度勾配は0.1℃/mm以上20℃/mm以下である、請求項1に記載の炭化珪素基板の製造方法。
- 前記挿入部は、前記第2の単結晶基板群の全体と前記第1のベース基板との間を隔てる仕切部材(60p)を含む、請求項1に記載の炭化珪素基板の製造方法。
- 前記仕切部材は、炭素、モリブデン、タングステン、および、金属カーバイドのいずれかから作られている、請求項3に記載の炭化珪素基板の製造方法。
- 前記挿入部は、前記第2の単結晶基板群の各々の、前記第2のベース基板と対向することになる面と反対の面の上に形成された保護膜(60f)を含む、請求項1に記載の炭化珪素基板の製造方法。
- 前記保護膜は、有機膜を炭化することによって形成された膜、炭素膜、ダイヤモンドライクカーボン膜、およびダイヤモンド膜の少なくともいずれかを含む、請求項5に記載の炭化珪素基板の製造方法。
- 炭化珪素から作られた第1および第2の単結晶基板群と、炭化珪素から作られた第1および第2のベース基板と、炭化珪素の昇華温度において固体状態を有する材料から作られた挿入部とを含む積層体を収めるための容器(40)を備え、
前記積層体は、前記第1の単結晶基板群の各々と前記第1のベース基板とが互いに対向し、かつ前記第2の単結晶基板群の各々と前記第2のベース基板とが互いに対向し、かつ前記第1の単結晶基板群と前記第1のベース基板と前記挿入部と前記第2の単結晶基板群と前記第2のベース基板とが一の方向に向かって積み重なるように構成され、さらに
前記積層体の温度が炭化珪素が昇華し得る温度に達するように、かつ前記積層体中において前記一の方向に向かって温度が高くなるような温度勾配が形成されるように前記積層体を加熱するための加熱部(91,92)を備える、炭化珪素基板の製造装置。
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US13/395,793 US20120184113A1 (en) | 2010-06-21 | 2011-01-07 | Method and device for manufacturing silicon carbide substrate |
KR1020127010056A KR20130092945A (ko) | 2010-06-21 | 2011-01-07 | 탄화규소 기판의 제조 방법 및 제조 장치 |
CN201180004456XA CN102598213A (zh) | 2010-06-21 | 2011-01-07 | 制造碳化硅衬底的方法和设备 |
CA2778185A CA2778185A1 (en) | 2010-06-21 | 2011-01-07 | Method and device for manufacturing silicon carbide substrate |
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JP2010140768A JP2012004494A (ja) | 2010-06-21 | 2010-06-21 | 炭化珪素基板の製造方法および製造装置 |
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JP6119100B2 (ja) | 2012-02-01 | 2017-04-26 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2013219163A (ja) * | 2012-04-09 | 2013-10-24 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
JP6026873B2 (ja) * | 2012-11-30 | 2016-11-16 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
CN111403265A (zh) * | 2014-12-22 | 2020-07-10 | 信越化学工业株式会社 | 复合基板、纳米碳膜的制作方法和纳米碳膜 |
CN109192350B (zh) * | 2018-10-08 | 2020-03-24 | 山西大同大学 | 一种基于碳化硅材料的肖特基微型核电池及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1112100A (ja) * | 1997-06-27 | 1999-01-19 | Nippon Pillar Packing Co Ltd | 単結晶SiCおよびその製造方法 |
JPH1131828A (ja) * | 1997-07-11 | 1999-02-02 | Sony Corp | 半導体基板の製造方法 |
JPH1129397A (ja) * | 1997-07-04 | 1999-02-02 | Nippon Pillar Packing Co Ltd | 単結晶SiCおよびその製造方法 |
JPH11279760A (ja) * | 1998-03-30 | 1999-10-12 | Kobe Steel Ltd | 被処理基板のガス処理方法 |
WO2001018872A1 (fr) * | 1999-09-07 | 2001-03-15 | Sixon Inc. | TRANCHE DE SiC, DISPOSITIF A SEMI-CONDUCTEUR DE SiC, ET PROCEDE DE PRODUCTION D'UNE TRANCHE DE SiC |
US7314520B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
JP2009117533A (ja) * | 2007-11-05 | 2009-05-28 | Shin Etsu Chem Co Ltd | 炭化珪素基板の製造方法 |
JP2009158933A (ja) * | 2007-12-04 | 2009-07-16 | Sumitomo Electric Ind Ltd | 炭化ケイ素半導体装置およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4091257A (en) * | 1975-02-24 | 1978-05-23 | General Electric Company | Deep diode devices and method and apparatus |
US4033786A (en) * | 1976-08-30 | 1977-07-05 | General Electric Company | Temperature gradient zone melting utilizing selective radiation coatings |
JP2005197464A (ja) * | 2004-01-07 | 2005-07-21 | Rohm Co Ltd | 半導体装置の製造方法 |
US7718519B2 (en) * | 2007-03-29 | 2010-05-18 | Panasonic Corporation | Method for manufacturing silicon carbide semiconductor element |
-
2010
- 2010-06-21 JP JP2010140768A patent/JP2012004494A/ja not_active Withdrawn
-
2011
- 2011-01-07 CN CN201180004456XA patent/CN102598213A/zh active Pending
- 2011-01-07 WO PCT/JP2011/050142 patent/WO2011161976A1/ja active Application Filing
- 2011-01-07 CA CA2778185A patent/CA2778185A1/en not_active Abandoned
- 2011-01-07 US US13/395,793 patent/US20120184113A1/en not_active Abandoned
- 2011-01-07 KR KR1020127010056A patent/KR20130092945A/ko not_active Application Discontinuation
- 2011-01-28 TW TW100103513A patent/TW201201279A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1112100A (ja) * | 1997-06-27 | 1999-01-19 | Nippon Pillar Packing Co Ltd | 単結晶SiCおよびその製造方法 |
JPH1129397A (ja) * | 1997-07-04 | 1999-02-02 | Nippon Pillar Packing Co Ltd | 単結晶SiCおよびその製造方法 |
JPH1131828A (ja) * | 1997-07-11 | 1999-02-02 | Sony Corp | 半導体基板の製造方法 |
JPH11279760A (ja) * | 1998-03-30 | 1999-10-12 | Kobe Steel Ltd | 被処理基板のガス処理方法 |
WO2001018872A1 (fr) * | 1999-09-07 | 2001-03-15 | Sixon Inc. | TRANCHE DE SiC, DISPOSITIF A SEMI-CONDUCTEUR DE SiC, ET PROCEDE DE PRODUCTION D'UNE TRANCHE DE SiC |
US7314520B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
JP2009117533A (ja) * | 2007-11-05 | 2009-05-28 | Shin Etsu Chem Co Ltd | 炭化珪素基板の製造方法 |
JP2009158933A (ja) * | 2007-12-04 | 2009-07-16 | Sumitomo Electric Ind Ltd | 炭化ケイ素半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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CN102598213A (zh) | 2012-07-18 |
KR20130092945A (ko) | 2013-08-21 |
TW201201279A (en) | 2012-01-01 |
CA2778185A1 (en) | 2011-12-29 |
US20120184113A1 (en) | 2012-07-19 |
JP2012004494A (ja) | 2012-01-05 |
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