WO2011152492A1 - Procédé de découpage en dés, procédé de connexion et structure de connexion - Google Patents

Procédé de découpage en dés, procédé de connexion et structure de connexion Download PDF

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Publication number
WO2011152492A1
WO2011152492A1 PCT/JP2011/062700 JP2011062700W WO2011152492A1 WO 2011152492 A1 WO2011152492 A1 WO 2011152492A1 JP 2011062700 W JP2011062700 W JP 2011062700W WO 2011152492 A1 WO2011152492 A1 WO 2011152492A1
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Prior art keywords
wafer
adhesive layer
film
adhesive film
adhesive
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PCT/JP2011/062700
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English (en)
Japanese (ja)
Inventor
西村　淳一
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ソニーケミカル＆インフォメーションデバイス株式会社
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Publication of WO2011152492A1 publication Critical patent/WO2011152492A1/fr

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Definitions

  • the present invention relates to a dicing method, a connection method, and a connection structure for a wafer with an adhesive film in which an adhesive layer and a protective film having transparency are sequentially laminated.
  • IC mounting direction face up, face down
  • adhesive layer fixing
  • paste film
  • NCF Non Particle Conductive Film
  • the wafer dicing method includes “laser (Dry)”, “plasma (Dry)”, and “blade (Wet)”.
  • laser and plasma methods performed in a dry environment dry environment
  • the apparatus used for these laser and plasma methods is not common, and the apparatus cost is three times or more that of the blade.
  • dicing in order to perform positioning (pattern recognition), it is necessary for the pattern to be visible or to be seen through with an IR camera.
  • the IR camera is not installed in a general blade dicing apparatus.
  • the wafer is temporarily exposed to pure water used for processing.
  • pure water used for processing.
  • wafer scraps mainly silicon
  • shaved by processing are dispersed. These wafer scraps are washed away when there is no tackiness (adhesiveness) on the surface of the processed member.
  • tackiness adheresiveness
  • the surface to which the cutting dust adheres is a functional surface of the IC, and therefore, when final mounting is performed, the cutting waste may come into contact (attack) with the functional surface of the IC. There is. Further, when dicing a thin wafer, there is a problem that chipping (breakage) occurs in the wafer and the workability is not good.
  • the present invention has been proposed in view of such a conventional situation, and an object of the present invention is to provide a wafer dicing method, a connection method, and a connection structure that improve workability when dicing the wafer. To do.
  • the chip with the adhesive layer picked up by the wafer dicing method is pressure-bonded to a circuit board having an electrode through the adhesive layer, and the electrode and the circuit pattern of the chip with the adhesive layer are connected.
  • connection structure according to the present invention is obtained by the above connection method.
  • chipping when dicing a wafer can be prevented, and workability when dicing the wafer can be improved.
  • FIG. 1 is a flowchart for explaining an example of a wafer dicing method according to the present embodiment.
  • FIG. 2 is a schematic view showing an example of a step of bonding a wafer to a jig.
  • FIG. 3 is a schematic view showing an example of a step of attaching an adhesive film to a wafer.
  • FIG. 4 is a schematic view showing an example of a dicing apparatus on which a wafer with an adhesive film is placed.
  • FIG. 5 is a schematic diagram illustrating an example of an imaging process and a division position determination process.
  • FIG. 6 is a schematic view illustrating an example of a cutting groove forming process.
  • FIG. 1 is a flowchart for explaining an example of a wafer dicing method according to the present embodiment.
  • FIG. 2 is a schematic view showing an example of a step of bonding a wafer to a jig.
  • FIG. 3 is a schematic view showing an example of a step of attaching an
  • FIG. 7A is a schematic diagram illustrating an example of a stage in which a protective member is disposed on the surface of a protective film of a wafer with an adhesive film in which cutting grooves are formed in the protective member disposing step
  • FIG. 8 is a schematic diagram showing an example of the dividing step.
  • FIG. 9 is a schematic diagram illustrating an example of a pickup process.
  • FIG. 10 is a flowchart for explaining an example of the connection method according to the present embodiment.
  • FIG. 11 is a schematic diagram illustrating an example of a crimping process.
  • FIG. 12 is a schematic diagram illustrating an example of a connection structure that is crimped in the crimping process.
  • FIG. 13 is a schematic view showing another example of the crimping process.
  • Wafer dicing method 1-1 Adhesion process 1-2. Imaging step 1-2-1. Dicing device 1-2-2. Imaging method 1-3. Division position determination step 1-4. Cutting groove forming step 1-5. Protection member disposing step 1-6. Division step 1-7. 1. Pickup process Connection method and connection structure 2-1. Crimping process 3. Other Embodiment 4 Example
  • the wafer dicing method according to the present embodiment includes an attaching step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, and a protective member disposing step S5. And a dividing step S6 and a pickup step S7.
  • Adhesion process> As shown in FIGS. 2 and 3, in the bonding step S ⁇ b> 1, an adhesive layer 22 and a protective film having transparency are provided on one surface (front surface) 10 a of a wafer 10 having a bump 16 as a circuit pattern on one surface. 24 is attached to the dicing tape 18 on the other surface 10b of the wafer 39 with an adhesive film formed by sequentially laminating 24. For example, the following process is performed in the sticking step S1.
  • the prepared wafer 10 is fixed to a jig 12.
  • Examples of the wafer 10 include a semiconductor wafer such as a silicon wafer. On one surface 10 a of the wafer 10, lattice-like scribe lines 14 are formed. A bump 16 that is a circuit pattern is formed on one surface 10 a of the wafer 10.
  • the jig 12 includes, for example, a ring-shaped or frame-shaped frame 20 having a diameter larger than the diameter of the wafer 10 and a dicing tape 18 having one surface having adhesiveness.
  • the dicing tape 18 is attached to one side of the frame 20 and is spread inside the frame 20.
  • the wafer 10 is attached to the center of the jig 12.
  • the other surface (opposite surface) 10 b of one surface 10 a (hereinafter also referred to as “functional surface 10 a”) of the wafer 10 is attached to the dicing tape 18.
  • the dicing tape 18 for example, an adhesive film whose peeling force is reduced by irradiating ultraviolet rays is used. Thereby, after dividing the wafer 10 into a plurality of chips 21, the chips 21 can be easily separated from the dicing tape 18 when the individual chips 21 are picked up by irradiating the dicing tape 18 with ultraviolet rays.
  • an adhesive film 26 in which a protective film 24 and an adhesive layer 22 are laminated is disposed on the functional surface 10 a of the wafer 10.
  • the adhesive layer 22 includes, for example, a film forming resin, a liquid curing component, and a curing agent.
  • the adhesive layer 22 may contain additives such as various rubber components, softeners, various fillers, and conductive particles, for example.
  • the adhesive layer 22 may be NCF (Non / Particle / Conductive / Film), ACF (Anisotropic / Conductive / Film), or a laminate thereof.
  • Examples of the film forming resin include phenoxy resin, polyester resin, polyamide resin, and polyimide resin.
  • the film-forming resin preferably contains a phenoxy resin from the viewpoint of easy availability of materials and connection reliability.
  • Examples of the liquid curing component include liquid epoxy resins and acrylates.
  • the liquid curing component preferably has two or more functional groups from the viewpoint of connection reliability and stability of the cured product.
  • Examples of the curing agent include imidazole, amines, sulfonium salts, onium salts, and phenols when the liquid curing component is a liquid epoxy resin. When the liquid curing component is an acrylate, an organic peroxide can be exemplified as the curing agent.
  • the thickness of the adhesive layer 22 is preferably greater than the height of the bump 16. That is, the thickness of the adhesive layer 22 is preferably set to a thickness that can cover the bumps 16.
  • the protective film 24 prevents cutting dust or the like from adhering to the adhesive layer 22 when the wafer 10 is divided using a dicing apparatus or the like.
  • the protective film 24 include plastic materials such as polyester film and polyethylene terephthalate film, paper such as high-quality paper and glassine paper, and the like.
  • the protective film 24 for example, a film having a function of transmitting visible light is used.
  • an image of the surface of the wafer 10 can be taken with the protective film 24 and the adhesive layer 22 attached to the wafer 10. That is, images such as the scribe lines 14, the bumps 16, and the alignment marks formed on the functional surface of the wafer 10 can be taken without using an expensive optical system such as an IR camera.
  • the protective film 24 may absorb light having a specific wavelength among visible light.
  • the protective film 24 may absorb light having a specific wavelength among light having a wavelength of 440 nm to 700 nm. In this case, when a visible light image of the surface of the wafer 10 is captured, a region where the protective film 24 exists in the visible light image is colored. Thereby, the presence or absence of the protective film 24 can be determined based on a visible light image obtained by imaging the surface of the wafer 10.
  • the protective film 24 absorbs light of a specific wavelength, the protective film 24 exists when the protective film 24 sufficiently transmits light other than light of the specific wavelength among visible light.
  • the pattern of the surface of the wafer 10 can be discriminated in the area to be processed.
  • the thickness of the protective film 24 is preferably in the range of 50 to 100 ⁇ m.
  • the protective film 24 may be peeled off from the adhesive layer 22 during the process of dividing the wafer 10 using a dicing apparatus or the like. It is inferior in workability compared with the case of 50 micrometers or more.
  • the thickness of the protective film 24 exceeds 100 ⁇ m, it is difficult to apply the adhesive layer 22 on the protective film 24 when the adhesive layer 22 is applied on the protective film 24 to produce the adhesive film 26.
  • the peeling force between the protective film 24 and the adhesive layer 22 is preferably 0.17 N / 5 cm or more.
  • the peeling force between the protective film 24 and the adhesive layer 22 indicates, for example, the peeling force when T-type peeling is performed in the 180 degree direction based on JIS Z0237.
  • the peeling force between the protective film 24 and the adhesive layer 22 is less than 0.17 N / 5 cm, the step of dividing the wafer 10 using a dicing apparatus or the like, that is, in the middle of the dividing step S6 described in detail later.
  • a chip 64 with an adhesive film which will be described later, is peeled off from the protective film 24, and the workability is inferior compared to the case where the peeling force between the protective film 24 and the adhesive layer 22 is 0.17 N / cm or more.
  • the peeling force between the protective film 24 and the contact bonding layer 22 is 2.0 N / 5cm or less. This is because when the peeling force between the protective film 24 and the adhesive layer 22 exceeds 2.0 N / cm, only part of the protective film is left and the peelability in the pickup step S7 is not good.
  • the peeling force between the protective film 24 and the adhesive layer 22 can be adjusted by subjecting the surface of the protective film 24 to a mold release treatment.
  • the mold release treatment can be performed, for example, by applying a silicone release agent to the surface of the protective film 24 and then heating the protective film 24 to dry the protective film 24.
  • the peeling force between the protective film 24 and the adhesive layer 22 may be smaller than the peeling force between the wafer 10 and the dicing tape 18 at the stage of bonding the wafer 10 to the jig 12 described with reference to FIG. Thereby, as will be described in detail later, it is possible to improve the peelability of the protective film 24 after processing the wafer 10 in the pickup step S7.
  • the adhesive film 26 preferably has a light transmittance of 74% or more at a wavelength of 440 nm to 700 nm.
  • the light transmittance can be adjusted by the material, thickness, surface treatment, and the like of the protective film 24 or the adhesive layer 22.
  • the light transmittance can be adjusted by the type and amount of the additive added to the protective film 24 or the adhesive layer 22.
  • the light transmittance of the adhesive layer 22 can be controlled by adding an inorganic filler to the adhesive layer 22.
  • the transmittance of light having a wavelength of 440 nm to 700 nm is 74% or more means that the maximum transmittance of light having a wavelength of 440 nm to 700 nm is 74% or more.
  • the light transmittance varies depending on the thickness of the adhesive film 26. Therefore, the light transmittance indicates the light transmittance at the thickness of the adhesive film 26 in a state of being attached to the wafer 10.
  • the adhesive film 26 may have a light transmittance of 74% or more over the entire wavelength range of 440 nm to 700 nm.
  • the adhesive film 26 is attached to the wafer 10 using the pressing device 28.
  • the pressing device 28 includes a stage 30 and a head 32, for example.
  • the wafer 30 is placed on the stage 30.
  • the wafer 10 is placed on the stage 30 while being held by the jig 12.
  • the stage 30 has the heating apparatus 34, for example. It should be noted that the heating device 34 need not be used at the stage of attaching the adhesive film 26 to the wafer 10.
  • the head 32 includes, for example, a pressing member 36 and a holding portion 38 that holds the pressing member 36 as shown in FIG.
  • the head 32 presses the pressing member 36 toward the stage 30 side.
  • the pressing member 36 is made of an elastic body, for example.
  • An elastomer such as silicone rubber can be used as the elastic body.
  • the adhesive film 26 can be uniformly attached to the wafer 10.
  • the pressing device 28 presses the wafer 10 having the adhesive film 26 disposed on the surface thereof between the stage 30 and the head 32. That is, the adhesive film 26 is pressed against the functional surface of the wafer 10 by the pressing member 36 held by the head 32. Thereby, the adhesive film 26 can be stuck on the wafer 10.
  • the other surface 10b of the wafer 10 in the wafer with film is attached to the dicing tape.
  • Imaging process> In the imaging step S ⁇ b> 2, light that is reflected by one surface 10 a of the wafer 10 in the wafer 39 with an adhesive film (hereinafter referred to as “functional surface 10 a of the wafer 10”) and transmitted through the adhesive layer 22 and the protective film 24 is received. Thus, an image of the functional surface 10a is taken.
  • the dicing apparatus includes a chuck table 42, an alignment stage 44, an imaging unit 46, a cutting unit 48, and a control unit 52.
  • the chuck table 42 sucks the jig 12 by, for example, a decompression device (not shown), and fixes the jig 12 on the chuck table 42.
  • the alignment stage 44 moves the chuck table 42 in the x direction and the y direction based on an instruction from the control unit 52, for example.
  • the imaging unit 46 includes, for example, an illumination member that illuminates the wafer 10, an optical system that receives light reflected by the surface of the wafer 10, and an imaging element that captures an image captured by the optical system.
  • the imaging unit 46 captures an image of the functional surface 10 a of the wafer 10 by receiving light reflected by the functional surface 10 a of the wafer 10 and transmitted through the adhesive layer 22 and the protective film 24.
  • the imaging unit 46 transmits information on the captured image to the control unit 52.
  • the imaging unit 46 is not particularly limited, but it is preferable to capture a visible light image because an inexpensive optical system can be used.
  • the cutting unit 48 cuts the wafer 10 based on an instruction from the control unit 52.
  • the cutting unit 48 includes, for example, a blade 50 that cuts the wafer 10.
  • the cutting unit 48 presses the rotating blade 50 against the wafer 10 to cut the wafer 10 and the like.
  • the driving unit 56 receives information related to the position where the wafer 10 is divided from the image processing unit 54 of the control unit 52.
  • the drive unit 56 drives the alignment stage 44 and the cutting unit 48 based on information regarding the position where the wafer 10 is divided. Thereby, the dicing apparatus 40 can divide (divide into pieces) the wafer 10.
  • Imaging method> In the imaging step S2, for example, the following process is performed using the dicing apparatus 40 described above.
  • the imaging unit 46 captures an image of the functional surface 10a of the wafer 10 by receiving light reflected by the functional surface 10a of the wafer 10 and transmitted through the adhesive layer 22 and the protective film 24. Subsequently, the imaging unit 46 transmits information on the captured image to the control unit 52. Subsequently, the image processing unit 54 of the dicing apparatus 40 receives information on the image captured by the imaging unit 46.
  • a position where the wafer 39 with the adhesive film is divided is determined based on the image captured in the imaging step S2. For example, in the division position determination step S3, as shown in FIG. 5, the image processing unit 54 recognizes the position of the scribe line 14 from the image of the functional surface 10a of the wafer 10, and divides the wafer 10 along the scribe line 14. Decide where to go.
  • Cutting groove forming process> In the cutting groove forming step S4, for example, as shown in FIG. 6, based on the position determined in the division position determining step S3, the wafer 39 with an adhesive film is moved from the one surface 39a side to the other surface of the wafer 39 with an adhesive film. A cutting groove 61 having a depth that does not reach 39b is formed.
  • the following processing is performed using the dicing apparatus 40 shown in FIG.
  • the drive unit 56 drives the alignment stage 44 so that one end of the scribe line 14 is connected to the blade 50.
  • the chuck table 42 is moved so as to be positioned below.
  • the drive unit 56 drives the cutting unit 48 to move the cutting unit 48 downward in a state where the blade 50 is rotated, thereby pressing the blade 50 against the wafer 10.
  • the driving unit 56 drives the alignment stage 44 to move the wafer 10 in the x direction.
  • the wafer 10 is divided along the scribe line 14, and the cutting groove 61 having a depth that does not reach from the one surface 39a side of the wafer 39 with the adhesive film to the other surface 39b, that is, Then, the wafer 39 with an adhesive film in which the cutting groove 61 having a depth corresponding to the finished thickness of the chip 21 is formed is formed.
  • the protective member 62 is disposed on the surface of the protective film 24 of the wafer 39 with the adhesive film in which the cutting groove 61 is formed in the cutting groove forming step S4.
  • the wafer 39 with the adhesive film is peeled off from the dicing tape 18 and also on the one surface 39a side of the wafer 39 with the adhesive film.
  • the protective member 62 is attached and disposed.
  • An example of such a protective member 62 is a back grind tape.
  • the pressure-sensitive adhesive it is preferable to use an ultraviolet irradiation type protective tape, that is, a UV tape so that the pressure-sensitive adhesive component does not remain on the surface of the wafer 39 with the adhesive film when the protective member 62 is peeled thereafter. .
  • the wafer with adhesive film 39 provided with the protective member 62 is moved to the next division step S6.
  • dividing step S6 for example, as shown in FIG. 8, the other surface 39b of the wafer 39 with the adhesive film on which the protective member 62 is arranged in the protective member arranging step S5 is ground to divide the wafer 39 with the adhesive film. .
  • a plurality of chips 60 with an adhesive film including the chip 64 with an adhesive layer in which the adhesive layer 22 is laminated on one surface of the chip 21 having the bumps 16 on one surface and the protective film 24 are formed.
  • the dividing step S6 includes at least a chuck table, a grinding wheel, a driving unit that drives the grinding wheel, a guide unit that supports the driving unit and guides the vertical movement, and the driving unit precisely moves in the vertical direction. It can carry out with a grinding device provided with the drive part for movement to be made.
  • the wafer 39 with an adhesive film provided with the protective member 62 is placed and fixed with the other surface 39b facing up and the protective member 62 in contact with a chuck table (not shown). While supplying the grinding water, the grinding wheel is driven to grind the other surface 39b side of the wafer 39 with the adhesive layer. Further, as shown in FIG. 8, the wafer 39 with the adhesive film is uniformly ground from the surface 39b side until the cutting groove 61 formed in the cutting groove forming step S4 is exposed.
  • the wafer 39 with an adhesive film is divided, and a plurality of chips 60 with an adhesive film including the chip 64 with an adhesive layer and the protective film 24 are provided.
  • the plurality of chips 60 with an adhesive film formed in this way have a thickness corresponding to the depth of the cutting groove 61, that is, a finished thickness.
  • the back surface 60b side of the chip 60 with the adhesive film is faced up and the protective member 62 is placed on the bottom, and is attached to the frame 20 via the dicing tape 18.
  • the chip with adhesive layer 64 is picked up from each of the protective films 24 of the plurality of chips with adhesive film 60 by pulling the chip with adhesive film 60 in the direction of the arrow in FIG.
  • the other surface 39b of the wafer 39 with the adhesive film on which the protective member 62 is disposed is ground to remove the wafer 39 with the adhesive film.
  • Chipping means that cracks, chips, cracks, and the like enter the chip by, for example, grinding.
  • chipping can be prevented even when a thin wafer (for example, a wafer of 50 ⁇ m or less) is diced, and the workability when dicing the wafer can be improved. .
  • the other surface 39b of the wafer 39 with an adhesive film provided with the protective member 62 is ground to divide the wafer 39 with an adhesive film,
  • the peeling force between the adhesive layer 22 and the protective film 24 is set to a predetermined value.
  • the cutting groove 61 having a depth that does not reach from the one surface 39a side of the wafer 39 with an adhesive film to the other surface 39b is formed.
  • the dividing step S6 contamination of foreign matters such as cutting waste when the wafer 10 is divided can be prevented. That is, in the wafer dicing method according to the present embodiment, since the chip 60 with the adhesive film can be manufactured in a state where the surface of the adhesive layer 22 is covered with the protective film 24, the surface of the adhesive layer 22 is cut. It is possible to prevent debris from adhering.
  • connection method and connection structure As shown in FIG. 10, the connection method according to the present embodiment includes an attaching step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, a protective member disposing step S5, It has a division step S6, a pickup step S7, and a crimping step S8. Since the sticking step S1 to the pick-up step S7 are the same as the processing shown in FIG. 1 described above, detailed description thereof is omitted.
  • the chip 64 with the adhesive layer picked up in the pickup step S7 is crimped to the circuit board 70 having the electrode 72 via the adhesive layer 22, and the electrode 72 and the bump 16 of the chip 64 with the adhesive layer are connected. .
  • the following processing is performed using a pressing device 28 as shown in FIG.
  • a plurality of chips 64 with an adhesive layer are temporarily mounted on the circuit board 70. That is, the chip 64 with the adhesive layer in which it is confirmed that the protective film 24 is peeled is disposed at a predetermined position on the surface of the circuit board 70.
  • the chip 64 with the adhesive layer and the circuit board 70 are aligned so that the bump 16 of the chip 64 with the adhesive layer and the electrode 72 of the circuit board 70 are electrically connected when both are pressed.
  • the circuit board 70 on which the chip 64 with the adhesive layer is arranged is placed on the stage 30 of the pressing device 28.
  • the chip 64 with the adhesive layer is pressed against the surface of the circuit board 70 by the pressing member 36 held by the head 32.
  • EBS Elasticity Bonding System
  • a pressure-bonding member made of an elastomer having a recess provided in a portion facing the circuit board of the main body of the head 32 is used.
  • thermocompression head having a pressing surface made of an elastic elastomer that covers the entire printed circuit board, and the plurality of chips 64 with an adhesive layer are collectively bonded together.
  • tip 64 with an adhesive layer can be collectively mounted in the surface of the circuit board 70 through the adhesive layer 22.
  • the bump 16 of the chip 64 with the adhesive layer and the electrode 72 of the circuit board 70 are connected via the adhesive layer 22.
  • the structure 80 can be manufactured.
  • the image processing unit 54 may recognize the position of the scribe line 14 by recognizing the position of the bump 16 or the alignment mark from the functional surface image of the wafer 10.
  • the pressing member 36 described above may be an elastic body. Therefore, even if it is a case where the several chip
  • the case where the plurality of chips 64 with an adhesive layer are collectively mounted on the circuit board 70 using an elastic body such as an elastomer for the pressing member 36 has been described.
  • the method of mounting the chip 64 with the adhesive layer on the circuit board 70 is not limited to this.
  • the chip 64 with the adhesive layer may be mounted on the circuit board 70 without using an elastic body such as an elastomer.
  • a plurality of chips 64 with an adhesive layer may be mounted on the circuit board 70 one by one.
  • the adhesive film 26 is attached to the wafer 10 using the pressing device 28 .
  • the method for attaching the adhesive film 26 to the wafer 10 is not limited to this.
  • the adhesive film 26 may be attached to the wafer 10 using a roll laminator.
  • the pressing member 36 is not limited to the EBS described above, and does not hinder the use of a normal thermocompression bonding head (hard head made of ceramic or metal) or an ultrasonic head.
  • the chip 64 with an adhesive layer may be bonded to the circuit board 70.
  • parts that are the same as or similar to those in FIGS. 1 to 12 are given the same reference numerals as in FIGS. 1 to 12, and redundant descriptions may be omitted.
  • the pressing device 82 electrically connects the circuit board 70 and the chip 21 by flip chip bonding.
  • the pressing device 82 includes a stage 84 and a ceramic tool 86.
  • the pressing device 82 and the stage 84 may have the same configuration as the pressing device 28 and the stage 30, respectively.
  • the ceramic tool 86 presses the chip 64 with the adhesive layer against the circuit board 70.
  • the ceramic tool 86 may press the plurality of chips 64 with adhesive layers against the circuit board 70 one by one.
  • the ceramic tool 86 may include a ceramic such as silicon carbide, silicon nitride, aluminum nitride.
  • the ceramic tool 86 may be an example of a head.
  • the ceramic tool 86 may include a heating device 88 that heats the ceramic tool 86.
  • the heating device 88 may be a ceramic heater.
  • the imaging unit 46 of the dicing apparatus 40 may capture an image of the surface of the wafer 10. Thereby, the image processing unit 54 can process the image of the surface of the wafer 10 and confirm whether or not the chip 64 with the adhesive layer is peeled from the chip 60 with the adhesive film.
  • the image processing unit 54 may select the chip 64 with the adhesive layer that has been peeled off from the protective film 24 of the chip 60 with the adhesive film.
  • a pickup device that separates each chip 64 with an adhesive layer from the chip 60 with an adhesive film may confirm whether or not the chip 64 with an adhesive layer is peeled from the chip 60 with an adhesive film.
  • the pickup device that separates the individual chips 64 with the adhesive layer from the chips 60 with the adhesive film picks up the chips 64 with the adhesive layer, the chips 64 with the adhesive layer are removed from the protective film 24 of the chip 60 with the adhesive film.
  • the tip of the pickup device and the dicing tape 18 are farther away from the tip of the pickup device and the chip with the adhesive layer 18 than when the chip 64 with the adhesive layer is peeled from the protective film 24. 64 comes into contact. Then, based on the pressure change which a pickup apparatus detects, you may confirm whether the chip
  • NCF having a thickness of 30 ⁇ m
  • PET film A polyethylene terephthalate film having a thickness different from that of the mold release treatment method having a thickness of 100 ⁇ m was used as a protective film for each adhesive film.
  • the adhesive film using the binder ⁇ was produced by the following procedure. First, 10 parts by mass of phenoxy resin (YP-50, manufactured by Tohto Kasei Co., Ltd.), 10 parts by mass of liquid epoxy resin (EP828, manufactured by Japan Epoxy Resin Co., Ltd.), imidazole-based latent curing agent (Novacure 3941HP, manufactured by Asahi Kasei Co., Ltd.) ) Add 100 parts by weight of toluene to 15 parts by weight, 5 parts by weight of a rubber component (RKB, manufactured by Resinas Kasei Co., Ltd.) and 1 part by weight of a silane coupling agent (A-187, manufactured by Momentive Performance Materials). A uniform resin solution (hereinafter referred to as “binder ⁇ ”) was prepared.
  • binder ⁇ a composition in which 100 parts by mass of an inorganic filler (amorphous silica having an average particle size of 0.5 ⁇ m manufactured by Admatechs) was added to the composition of binder ⁇ (hereinafter referred to as “binder ⁇ ”) was used. Except this, it was produced in the same manner as the adhesive film using the binder ⁇ .
  • an inorganic filler amorphous silica having an average particle size of 0.5 ⁇ m manufactured by Admatechs
  • the peeling force between the adhesive layer and the protective film was adjusted by applying a release treatment to the surface of the protective film before applying the adhesive layer on the protective film.
  • the mold release treatment was performed by applying a silicone release agent to the surface of the protective film, and then heating the protective film to dry the protective film.
  • the adhesive films of Examples 1 to 10 shown in Table 1 and Comparative Examples 1 to 3 shown in Table 2 have different peeling forces between the adhesive layer and the protective film by adjusting the blending of the silicone release agent. Was made.
  • ⁇ About transmittance> The transmittance of the adhesive film was measured for total light transmittance using CM-3600d (manufactured by Konica Minolta Co., Ltd.). The transmittance of the adhesive film was calculated according to the following procedure. First, each adhesive film was affixed on the glass substrate so that the adhesive layer of the adhesive film and the glass substrate faced to prepare a measurement sample. The thickness of the glass substrate was 1.1 mm. Next, the total light transmittance of the glass substrate alone was measured. The measurement was performed by continuously changing the wavelength of light to be transmitted from 360 nm to 740 nm. Next, the total light transmittance was similarly measured for each of the prepared measurement samples. The transmittance of each adhesive film was calculated with the total light transmittance of the glass substrate alone as 100%.
  • ⁇ Peeling force of protective film against adhesive film The peeling force of the protective film with respect to the adhesive film shown in Table 1 and Table 2 was measured using Tensilon (made by Orientec Co., Ltd.). The tensile direction was 180 degrees. The tensile method was T-type peeling. The tensile speed was set at 300 mm per minute. The measurement was performed under conditions of a temperature of 23 ⁇ 2 ° C. and a humidity of 55 ⁇ 10% RH.
  • the silicon wafer had a diameter of 6 inches and a thickness of 700 ⁇ m. Further, the bump formed on the silicon wafer had a height of 25 ⁇ m.
  • a dicing device (DFD-651) was used to form a cutting groove having a depth that does not reach the other surface from one side of the wafer with the adhesive film on the wafer with the adhesive film.
  • a dicing device (DFD-651) was used as the blade.
  • NBC-ZB2030-0.04t manufactured by DISCO Corporation
  • the thickness of the blade was 40 ⁇ m.
  • the rotation speed of the blade was set to 30000 rpm.
  • the blade feed speed was set to 10 mm / sec.
  • each of the wafers with an adhesive film was divided into 6.3 mm ⁇ 6.3 mm chips with an adhesive film using a grinding device (DFD-8540, manufactured by Disco Corporation).
  • the machining conditions were a rough cutting speed of 0.4 ⁇ m / sec and a final cutting speed of 0.3 ⁇ m / sec.
  • the thickness of the wafer after grinding was 200 ⁇ m.
  • dicing step A the processing performed in Examples 1 to 10 is referred to as “dicing step A”.
  • Comparative Example 1 the cutting groove forming step S4 shown in FIG. 1 was performed except that a cutting groove having a depth reaching from the one surface side of the wafer with the adhesive film to the other surface was formed on the wafer with the adhesive film.
  • a dicing test was conducted in the same manner as in Examples 1 to 10.
  • the process performed in Comparative Example 1 is referred to as “dicing process B”.
  • Comparative Example 3 the comparison was performed except that the dividing step S6 shown in FIG. 1 was not performed, and the adhesive film was bonded to the wafer after the grinding process was performed so that the thickness of the wafer became 200 ⁇ m in the bonding step S1.
  • a dicing test was conducted in the same manner as in Example 2.
  • the process performed in Comparative Example 3 is referred to as “dicing step D”.
  • the pattern formed on the surface of the silicon wafer was observed with a CCD camera mounted on DFD-651 (manufactured by DISCO Corporation).
  • the line width of the pattern was 30 ⁇ m.
  • a pattern recognition property of “ ⁇ ” indicates that the device recognition score is 80 or more, that is, the pattern recognition property is good.
  • the pattern recognition property “ ⁇ ” indicates that the device recognition score is less than 80, that is, the pattern recognition property is not good.
  • the workability “ ⁇ ” indicates that there is no chip skipping / displacement and no chipping (no defect during 10-point average).
  • a workability of “ ⁇ ” indicates that there is no chip skipping / displacement and chipping is small (the average of 10 points is less than 10% defective).
  • a workability of “ ⁇ ” indicates that there is some deviation (average of 10 points, with a defect of less than 30%).
  • the workability “x” indicates that there is much chipping (the average of 10 points is 50% or more defective).
  • the wafer with the adhesive film has a depth that does not reach the other surface from the one surface side of the wafer with the adhesive film. Since the above-mentioned dicing process B was performed without forming the cutting groove, the workability was not good.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Wire Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention a trait à un procédé de découpage en dés permettant de traiter parfaitement une plaquette au moment du découpage en dés de la plaquette. Le procédé de découpage en dés comprend : une étape de collage (S1) consistant à coller la surface (39b) d'une plaquette attachée à un film adhésif (39) sur une bande de découpage en dés (18), ladite plaquette attachée à un film adhésif étant dotée d'une couche adhésive (22) et d'un film protecteur perméable (24) stratifiés de façon séquentielle sur la surface (10a) d'une plaquette (10); une étape d'analyse d'images (S2) au cours de laquelle une image de la surface (10a) de la plaquette attachée à un film adhésif (39) est saisie; une étape de détermination de position de division (S3) au cours de laquelle les positions où la plaquette attachée à un film adhésif (39) doit être divisée sont déterminées en fonction de l'image saisie; une étape de formation de rainure de découpage (S4) au cours de laquelle une rainure de découpage dotée d'une profondeur qui n'atteint pas la surface (39b) de la plaquette attachée à un film adhésif (39) à partir de la surface (39a) est formée sur la plaquette attachée à un film adhésif (39); une étape de dépôt d'élément de protection (S5) au cours de laquelle un élément de protection (62) est déposé sur la surface du film protecteur (24) de la plaquette attachée à un film adhésif (39); une étape de division (S6) au cours de laquelle une pluralité de puces attachées à un film adhésif (60) sont formées; et une étape de saisie (S7) au cours de laquelle les puces attachées à un film adhésif (64) sont saisies.
PCT/JP2011/062700 2010-06-02 2011-06-02 Procédé de découpage en dés, procédé de connexion et structure de connexion WO2011152492A1 (fr)

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JP6888806B2 (ja) * 2017-03-06 2021-06-16 ナミックス株式会社 半導体実装方法
CN109390248A (zh) * 2017-08-09 2019-02-26 志圣科技（广州）有限公司 切膜装置及其切膜方法
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