WO2011132559A1 - レーザアニール方法、装置及びマイクロレンズアレイ - Google Patents

レーザアニール方法、装置及びマイクロレンズアレイ Download PDF

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Publication number
WO2011132559A1
WO2011132559A1 PCT/JP2011/058990 JP2011058990W WO2011132559A1 WO 2011132559 A1 WO2011132559 A1 WO 2011132559A1 JP 2011058990 W JP2011058990 W JP 2011058990W WO 2011132559 A1 WO2011132559 A1 WO 2011132559A1
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Prior art keywords
microlenses
laser
rows
microlens
group
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PCT/JP2011/058990
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English (en)
French (fr)
Japanese (ja)
Inventor
水村　通伸
渡辺　由雄
畑中　誠
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V Technology Co Ltd
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V Technology Co Ltd
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Priority to KR1020127030599A priority Critical patent/KR101773219B1/ko
Priority to CN201180020284.5A priority patent/CN102844839B/zh
Publication of WO2011132559A1 publication Critical patent/WO2011132559A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

Definitions

  • the present invention relates to a laser annealing method and apparatus for forming a low-temperature polysilicon film by annealing an amorphous silicon film by irradiation with laser light in a thin film transistor liquid crystal panel or the like, and in particular, a microlens array used therefor.
  • the present invention relates to a laser annealing method and apparatus capable of annealing only a region where a thin film transistor is to be formed.
  • an amorphous silicon film is formed on a glass substrate, and laser light having a linear beam shape is applied to the amorphous silicon film from one end of the substrate in a direction perpendicular to the longitudinal direction of the beam.
  • laser light having a linear beam shape is applied to the amorphous silicon film from one end of the substrate in a direction perpendicular to the longitudinal direction of the beam.
  • a low-temperature polysilicon film is formed.
  • the linear laser beam the amorphous silicon film is heated and melted by the laser beam, and then the molten silicon is rapidly cooled by the passage of the laser beam and solidified to be crystallized to form a low-temperature polysilicon film.
  • the entire amorphous silicon film is heated to a high temperature upon irradiation with laser light, and the entire amorphous silicon film becomes a low-temperature polysilicon film by melting and solidifying. For this reason, since regions other than the region where a thin film transistor (hereinafter referred to as TFT) is to be formed are also annealed, there is a problem that processing efficiency is poor.
  • TFT thin film transistor
  • a microlens array is used, and each microlens condenses laser light onto a plurality of minute areas on the amorphous silicon film, and simultaneously individually applies laser light to the minute areas corresponding to each transistor.
  • a method of annealing by irradiation has been proposed (Patent Document 2). This method has an advantage that the use efficiency of the laser beam is increased because only the amorphous silicon film in a plurality of TFT formation regions is annealed.
  • the present invention has been made in view of such a problem, and the microlens array can be configured with a large pitch different from the pitch of the transistor formation scheduled region in the amorphous silicon film.
  • Another object of the present invention is to provide a laser annealing method, apparatus, and microlens array capable of forming a micro polysilicon film region by laser annealing on an amorphous silicon film with a small pitch.
  • a laser annealing method includes a microlens array in which a plurality of microlenses are arranged in m (m is a natural number), a mask having an opening corresponding to each microlens, and generation of laser light.
  • the m rows of microlenses form a group every n (n is a natural number, n ⁇ m) rows, and in each group, the microlenses are arranged at the same pitch P.
  • the lenses are separated by P + P / n.
  • the first step laser annealing is performed by irradiating the amorphous silicon film on the substrate with the first laser beam from the microlens for n rows
  • the second step When the laser beam irradiation system and the substrate move relatively by n ⁇ P, the amorphous silicon film on the substrate is irradiated with a second laser beam from the microlens for 2 ⁇ n rows to perform laser processing.
  • Annealing is performed, and thereafter, laser irradiation is performed a plurality of times in the same manner to form laser annealing regions with a P / n pitch.
  • the laser annealing apparatus includes a microlens array in which a plurality of microlenses are arranged in m (m is a natural number), a mask having an opening corresponding to each microlens, and laser light.
  • a light guide unit for guiding laser light from the generation source to the mask and the microlens, a laser light irradiation system including the mask and the microlens, and a substrate in a row of the microlenses.
  • the m rows of microlenses form a group every n (n is a natural number, n ⁇ m) rows, and in each group, the microlenses are arranged at the same pitch P.
  • the lenses are separated by P + P / n,
  • the control device performs laser annealing by irradiating the amorphous silicon film on the substrate with the first laser beam from n rows of microlenses, and in the second step, the laser beam irradiation system.
  • laser annealing is performed by irradiating the amorphous silicon film on the substrate with a second laser beam from microlenses for 2 ⁇ n rows, and so on.
  • the driving means and the generation source are controlled so that laser annealing is performed a plurality of times and laser annealing regions are formed at a P / n pitch.
  • the microlens array according to the present invention is used in a laser beam irradiation apparatus, and in the microlens array in which a plurality of microlenses are arranged in m (m is a natural number), the m rows of microlenses are arranged. Is a group for every n (n is a natural number, n ⁇ m) column, and in each group, the microlenses are arranged at the same pitch P, and between each group, the microlens is P + P / n It is characterized by being separated.
  • the laser light irradiation system and the substrate are relatively moved.
  • n rows of laser light irradiation regions can be provided between the pitches P of the microlens array. That is, n rows of irradiation areas can be provided in the arrangement pitch of each group of microlenses within P, and the arrangement pitch of the irradiation areas can be made fine.
  • the microlens array can be formed with a large pitch different from the pitch of the transistor formation planned region in the amorphous silicon film, and the microcrystalline array by laser annealing is applied to the amorphous silicon film at a pitch smaller than the arrangement pitch of the microlens array.
  • a silicon film region can be formed.
  • FIG. 4 is a diagram showing a step subsequent to FIG. 3. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG. It is a figure which shows the next process of FIG.
  • FIG. 1 is a diagram showing a laser irradiation apparatus using a microlens 5.
  • the laser irradiation apparatus shown in FIG. 1 is annealed by irradiating only the channel region formation scheduled region with laser light, for example. This is an apparatus for polycrystallizing and forming a polysilicon film.
  • the laser light emitted from the light source 1 is shaped into a parallel beam by the lens group 2 and applied to the irradiated object 6 through a microlens array including a large number of microlenses 5. Irradiate.
  • the laser light source 1 is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 353 nm at a repetition period of, for example, 50 Hz.
  • a large number of microlenses 5 are arranged on a transparent substrate 4, and the laser light is focused on a thin film transistor formation scheduled area set on a thin film transistor substrate as an irradiated body 6.
  • the transparent substrate 4 is arranged in parallel to the irradiated body 6, and the microlenses 5 are arranged at a pitch of an integer multiple (for example, 2) of 2 or more of the arrangement pitch of the transistor formation scheduled regions.
  • the irradiated body 6 of the present embodiment is, for example, a thin film transistor, and a polysilicon channel region is formed by irradiating a laser beam to the channel region formation scheduled region of the a-Si film.
  • a mask 3 for irradiating only the channel formation scheduled region with the laser beam is arranged by the microlens 5, and the channel region is defined in the irradiated object 6 by this mask 3. .
  • a gate electrode made of a metal film such as Al is patterned on a glass substrate by sputtering.
  • a gate insulating film made of a SiN film is formed on the entire surface by low-temperature plasma CVD at 250 to 300 ° C. using silane and H 2 gas as source gases.
  • an a-Si: H film is formed on the gate insulating film by, eg, plasma CVD.
  • This a-Si: H film is formed by using a mixed gas of silane and H 2 gas as a source gas.
  • one microlens 5 is arranged in each channel region, and only this channel formation planned region is irradiated with laser light and annealed. Then, this channel formation scheduled region is polycrystallized to form a polysilicon channel region.
  • the microlenses 5 are not arranged in a single row but are arranged in a plurality of rows. In the present embodiment of FIGS. 2 to 9, three groups of three rows are provided, and a total of nine rows of microlenses are arranged. .
  • FIG. 2 is a plan view showing the arrangement of the microlenses 5 and the laser light irradiation area.
  • FIG. 3 to FIG. 9 are upper views of them, showing a region 10 (region subjected to annealing) in which the laser light is condensed on the amorphous silicon film by the microlens and a planar arrangement of the microlens 5.
  • the lower figure is a front view showing laser light irradiated on the glass substrate.
  • an aluminum mask 3 is disposed above the microlens 5, and a light shielding plate 7 that shields the laser light is disposed above the mask 3. As shown in FIG.
  • the microlenses 5 are arranged in a total of 9 rows of 3 rows each of the first group 11, the second group 12, and the third group 13.
  • the microlenses 5 are arranged at a constant pitch P.
  • P the pitch between the microlenses between the first group 11 and the second group 12, and between the microlenses between the second group 12 and the third group 13, both are P + 1 / 3P. They are separated by an interval.
  • a gate layer 21 is formed on the entire surface of the glass substrate 20, and an amorphous silicon layer 22 is further formed on the gate layer 21.
  • the mask 3, the microlens 5, and the light shielding plate 7 are disposed in front of the upper region of the glass substrate 20.
  • the glass substrate 20 is moved to the right in the figure while the light shielding plate 7, the mask 3 and the microlens 5 are fixed.
  • This movement of the substrate is performed by irradiating the laser beam after moving by a distance three times the arrangement pitch P of the microlenses, and further irradiating the laser beam after the substrate has moved by a distance three times the pitch P. It is to do.
  • the operation of the laser beam generation system and the driving means for moving the laser beam irradiation system including the mask and the microlens and the substrate relative to each other in the direction perpendicular to the microlens row is performed. It is controlled by the control device to control. As shown in FIG. 3, the mask 3 is held in a state in which the positional relationship with the microlenses 5 is constant so that the openings correspond to the microlenses 5 on the transparent substrate 4.
  • the light shielding plate 7 covers the upper part of the other microlenses 5 except for the region above the microlenses 5 for three rows on the front end side (on the substrate 20 side), and shields the laser light.
  • the glass substrate 20 is moved to the right in the drawing. Then, when the position of the glass substrate 20 moves by a distance three times the pitch P, the glass substrate 20 enters the microlens 5 and the mask 3 below the width of the three rows of the microlens 5. At this time, one shot of the laser beam 30 is irradiated. Then, in the amorphous silicon film 21, the region 10 collected by the microlenses 5 for three rows of the pitch P is heated by the laser beam to be heated and melted and solidified to crystallize the region 10. As a result, the regions 10 for the three rows become polysilicon films. The microlenses 5 other than the microlenses 5 for the three rows are shielded by the light shielding plate 7 and are not irradiated with laser light.
  • the laser beam is 1 Irradiate a shot.
  • laser annealing is performed in the region 10 collected by the micro lens 5 of the first group 11 and the micro lens 5 of the second group 12.
  • the region irradiated with the laser light by the microlenses 5 of the first group and the second group in the step of FIG. No. 10 has been subjected to laser annealing.
  • the laser annealing region 10 formed by the first group of microlenses 5 in the first shot and the second group of microlenses 5 in the second shot in the row portion (a portion having a width of about 3P).
  • the laser annealing region 10 formed by the above is shifted by 1 / 3P. That is, in the regions 10 arranged at the pitch P, the regions 10 adjacent to the regions 10 formed in the first shot by 1 / 3P are formed in only three rows.
  • a third shot of laser light is performed. Then, the laser light is focused on the amorphous silicon film 22 through all the microlenses of the first group 11, the second group 12, and the third group 13.
  • the first shot of the first group of laser beams, the second shot of the second group of laser beams, and the third shot are irradiated with a shift of 1 / 3P, thereby forming a total of 9 rows of laser annealing regions 10 of 3 rows ⁇ 3 at a 1 / 3P pitch.
  • a one-shot laser beam is further irradiated.
  • the glass substrate 20 advances forward by a width of about 3P from the lower portion of the microlens 5 and the mask 3, and the portion of the amorphous silicon film 22 excluding the portion of about 3P is irradiated with the laser light.
  • laser light is condensed on the amorphous silicon film 22 from all the microlenses 5 of the first group 11, the second group 12, and the third group 13, and subjected to laser annealing in each region 10. .
  • 18 rows of laser annealing regions 10 are arranged at a 1 / 3P pitch for a portion having a width of about 6P from the front end of the glass substrate 20, and a 1 / 3P pitch for a portion about 3P behind.
  • Six rows of regions 10 are arranged at a pitch of 2 / 3P, and further, three rows of regions 10 are arranged at a pitch of P in a portion about 3P behind.
  • the portions of the microlens 5 and the front end side of the mask 3 are arranged in three rows, and the laser beam is blocked by another light blocking plate, thereby stopping the irradiation of the laser beam. .
  • the irradiation of laser light from the leftmost three rows of microlenses 5 is stopped, the irradiation of laser light from the next three rows of microlenses 5 is stopped, and thereafter the glass substrate 20 is only 3P.
  • laser annealing is completed in all regions of the amorphous film.
  • the arrangement pitch of the microlenses 5 is P
  • the polysilicon region 10 having an arrangement pitch of 1 / 3P is formed on the glass substrate 20.
  • a fine region of polysilicon can be formed with a finer pitch than the arrangement pitch of the microlenses 5.
  • the number of rows of microlenses having the same pitch belonging to each group is appropriately set, and the interval between the groups is set to (P + P / n), so that the laser annealing region 10, that is, a fine polycrystal is formed.
  • the formation pitch of the silicon regions 10 can be set arbitrarily (P / n) regardless of the pitch of the microlenses 5.
  • the semiconductor device since a minute laser annealing region can be formed at a finer pitch than the arrangement pitch of the microlens array, the semiconductor device can be miniaturized and the microlens array can be easily manufactured. It is extremely useful.
  • Laser light source 2 Lens group 3: Mask 4: Transparent substrate 5: Micro lens 6: Irradiated body 7: Light shielding plate 11: First group (micro lens) 12: Second group (microlens) 13: Third group (micro lens) 20: Glass substrate 21: Gate layer 22: Amorphous silicon film

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PCT/JP2011/058990 2010-04-23 2011-04-11 レーザアニール方法、装置及びマイクロレンズアレイ Ceased WO2011132559A1 (ja)

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KR1020127030599A KR101773219B1 (ko) 2010-04-23 2011-04-11 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이
CN201180020284.5A CN102844839B (zh) 2010-04-23 2011-04-11 激光退火方法、装置以及微透镜阵列

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JP2010-100298 2010-04-23
JP2010100298A JP5495043B2 (ja) 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ

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WO2019102548A1 (ja) * 2017-11-22 2019-05-31 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法
WO2019171502A1 (ja) * 2018-03-07 2019-09-12 堺ディスプレイプロダクト株式会社 レーザアニール装置、レーザアニール方法およびアクティブマトリクス基板の製造方法
CN110462787A (zh) * 2017-01-24 2019-11-15 堺显示器制品株式会社 激光退火装置、激光退火方法和掩模
WO2019234856A1 (ja) * 2018-06-06 2019-12-12 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法
US10559600B2 (en) 2018-06-28 2020-02-11 Sakai Display Products Corporation Thin film transistor, display device and method for producing thin film transistor
US10770483B2 (en) 2018-06-28 2020-09-08 Sakai Display Products Corporation Thin film transistor, display device and method for manufacturing thin film transistor
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US11133333B2 (en) 2018-06-28 2021-09-28 Sakai Display Products Corporation Producing method for thin film transistor with different crystallinities
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same

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US10811286B2 (en) 2016-09-28 2020-10-20 Sakai Display Products Corporation Laser annealing device and laser annealing method
WO2018109912A1 (ja) * 2016-12-15 2018-06-21 堺ディスプレイプロダクト株式会社 レーザーアニール装置、レーザーアニール方法及びマスク
CN108227376A (zh) * 2018-01-03 2018-06-29 京东方科技集团股份有限公司 一种微结构的制备方法、压印模版、显示基板
CN112916873B (zh) * 2021-01-26 2022-01-28 上海交通大学 基于脉冲激光驱动的微滴三维打印系统及方法
CN114799225B (zh) * 2022-05-05 2023-05-23 上海交通大学 脉冲激光驱动金属微滴打印系统及调节方法
KR102738691B1 (ko) * 2022-12-06 2024-12-05 (주)알엔알랩 기판 구조체에 대한 레이저 열처리 방법 및 이를 적용한 전자 소자의 제조 방법

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KR101773219B1 (ko) 2017-08-31
CN102844839B (zh) 2015-08-26
TW201143949A (en) 2011-12-16
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