TWI513530B - 雷射退火方法、裝置及微透鏡陣列 - Google Patents
雷射退火方法、裝置及微透鏡陣列 Download PDFInfo
- Publication number
- TWI513530B TWI513530B TW100113695A TW100113695A TWI513530B TW I513530 B TWI513530 B TW I513530B TW 100113695 A TW100113695 A TW 100113695A TW 100113695 A TW100113695 A TW 100113695A TW I513530 B TWI513530 B TW I513530B
- Authority
- TW
- Taiwan
- Prior art keywords
- microlenses
- microlens
- laser light
- laser
- group
- Prior art date
Links
- 238000005224 laser annealing Methods 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 49
- 229910052732 germanium Inorganic materials 0.000 claims description 28
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 41
- 239000011295 pitch Substances 0.000 description 31
- 239000011521 glass Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010100298A JP5495043B2 (ja) | 2010-04-23 | 2010-04-23 | レーザアニール方法、装置及びマイクロレンズアレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201143949A TW201143949A (en) | 2011-12-16 |
| TWI513530B true TWI513530B (zh) | 2015-12-21 |
Family
ID=44834086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100113695A TWI513530B (zh) | 2010-04-23 | 2011-04-20 | 雷射退火方法、裝置及微透鏡陣列 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5495043B2 (enExample) |
| KR (1) | KR101773219B1 (enExample) |
| CN (1) | CN102844839B (enExample) |
| TW (1) | TWI513530B (enExample) |
| WO (1) | WO2011132559A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10811286B2 (en) | 2016-09-28 | 2020-10-20 | Sakai Display Products Corporation | Laser annealing device and laser annealing method |
| WO2018109912A1 (ja) * | 2016-12-15 | 2018-06-21 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、レーザーアニール方法及びマスク |
| CN110462787A (zh) * | 2017-01-24 | 2019-11-15 | 堺显示器制品株式会社 | 激光退火装置、激光退火方法和掩模 |
| US11121262B2 (en) | 2017-07-12 | 2021-09-14 | Sakai Display Products Corporation | Semiconductor device including thin film transistor and method for manufacturing the same |
| CN110870078A (zh) | 2017-07-12 | 2020-03-06 | 堺显示器制品株式会社 | 半导体装置以及其制造方法 |
| WO2019102548A1 (ja) * | 2017-11-22 | 2019-05-31 | 堺ディスプレイプロダクト株式会社 | レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法 |
| CN108227376A (zh) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种微结构的制备方法、压印模版、显示基板 |
| CN111788658A (zh) * | 2018-03-07 | 2020-10-16 | 堺显示器制品株式会社 | 激光退火装置、激光退火方法以及有源矩阵基板的制造方法 |
| WO2019234856A1 (ja) * | 2018-06-06 | 2019-12-12 | 堺ディスプレイプロダクト株式会社 | レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法 |
| JP2020004861A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| JP2020004860A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| JP2020004859A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| WO2020031309A1 (ja) | 2018-08-08 | 2020-02-13 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法 |
| CN112916873B (zh) * | 2021-01-26 | 2022-01-28 | 上海交通大学 | 基于脉冲激光驱动的微滴三维打印系统及方法 |
| CN114799225B (zh) * | 2022-05-05 | 2023-05-23 | 上海交通大学 | 脉冲激光驱动金属微滴打印系统及调节方法 |
| KR102738691B1 (ko) * | 2022-12-06 | 2024-12-05 | (주)알엔알랩 | 기판 구조체에 대한 레이저 열처리 방법 및 이를 적용한 전자 소자의 제조 방법 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009251A1 (en) * | 2000-01-20 | 2001-07-26 | Komatsu Ltd. | Laser machining apparatus |
| WO2002034446A2 (en) * | 2000-10-23 | 2002-05-02 | U. C. Laser Ltd. | Method and apparatus for multi-beam laser machining |
| TW200424031A (en) * | 2003-04-10 | 2004-11-16 | Phoeton Corp | Laser processing apparatus and laser processing method |
| JP2005197730A (ja) * | 2003-12-29 | 2005-07-21 | Lg Philips Lcd Co Ltd | レーザーマスク、結晶化方法、これを利用した表示素子、及び表示素子の製造方法 |
| CN101189097A (zh) * | 2005-06-01 | 2008-05-28 | 飞腾股份有限公司 | 激光加工装置及激光加工方法 |
| CN101312117A (zh) * | 2007-05-24 | 2008-11-26 | 株式会社岛津制作所 | 结晶装置以及结晶方法 |
| JP2010075982A (ja) * | 2008-09-29 | 2010-04-08 | V Technology Co Ltd | レーザ加工方法及それに使用する装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3326654B2 (ja) * | 1994-05-02 | 2002-09-24 | ソニー株式会社 | 表示用半導体チップの製造方法 |
| JP3239314B2 (ja) * | 1994-09-16 | 2001-12-17 | 日本板硝子株式会社 | 平板レンズアレイおよびそれを用いた液晶表示素子 |
| JP2003109911A (ja) * | 2001-10-01 | 2003-04-11 | Sharp Corp | 薄膜処理装置、薄膜処理方法および薄膜デバイス |
-
2010
- 2010-04-23 JP JP2010100298A patent/JP5495043B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-11 CN CN201180020284.5A patent/CN102844839B/zh not_active Expired - Fee Related
- 2011-04-11 KR KR1020127030599A patent/KR101773219B1/ko not_active Expired - Fee Related
- 2011-04-11 WO PCT/JP2011/058990 patent/WO2011132559A1/ja not_active Ceased
- 2011-04-20 TW TW100113695A patent/TWI513530B/zh not_active IP Right Cessation
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009251A1 (en) * | 2000-01-20 | 2001-07-26 | Komatsu Ltd. | Laser machining apparatus |
| JP2001269789A (ja) * | 2000-01-20 | 2001-10-02 | Komatsu Ltd | レーザ加工装置 |
| WO2002034446A2 (en) * | 2000-10-23 | 2002-05-02 | U. C. Laser Ltd. | Method and apparatus for multi-beam laser machining |
| TW200424031A (en) * | 2003-04-10 | 2004-11-16 | Phoeton Corp | Laser processing apparatus and laser processing method |
| JP2005197730A (ja) * | 2003-12-29 | 2005-07-21 | Lg Philips Lcd Co Ltd | レーザーマスク、結晶化方法、これを利用した表示素子、及び表示素子の製造方法 |
| CN101189097A (zh) * | 2005-06-01 | 2008-05-28 | 飞腾股份有限公司 | 激光加工装置及激光加工方法 |
| CN101312117A (zh) * | 2007-05-24 | 2008-11-26 | 株式会社岛津制作所 | 结晶装置以及结晶方法 |
| JP2010075982A (ja) * | 2008-09-29 | 2010-04-08 | V Technology Co Ltd | レーザ加工方法及それに使用する装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5495043B2 (ja) | 2014-05-21 |
| KR20130065661A (ko) | 2013-06-19 |
| KR101773219B1 (ko) | 2017-08-31 |
| CN102844839B (zh) | 2015-08-26 |
| TW201143949A (en) | 2011-12-16 |
| JP2011233597A (ja) | 2011-11-17 |
| WO2011132559A1 (ja) | 2011-10-27 |
| CN102844839A (zh) | 2012-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI513530B (zh) | 雷射退火方法、裝置及微透鏡陣列 | |
| US10622484B2 (en) | Thin film transistor, manufacturing process for thin film transistor, and laser annealing apparatus | |
| KR101803691B1 (ko) | 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치 | |
| CN1179403C (zh) | 半导体器件及其制造方法 | |
| TWI512833B (zh) | 低溫多晶矽膜之形成裝置及方法 | |
| TWI521563B (zh) | 雷射處理裝置 | |
| CN107430990B (zh) | 薄膜晶体管基板、显示面板以及激光退火方法 | |
| JP6666426B2 (ja) | レーザーアニール装置、マスク、及びレーザーアニール方法 | |
| JP6221088B2 (ja) | レーザアニール装置及びレーザアニール方法 | |
| US10998189B2 (en) | Laser annealing process of drive backplane and mask | |
| JP2013004532A (ja) | 半導体薄膜結晶化方法及び半導体薄膜結晶化装置 | |
| JP2007281465A (ja) | 多結晶膜の形成方法 | |
| JP2008262994A (ja) | 結晶化方法および結晶化装置 | |
| US20200402823A1 (en) | Laser annealing device, laser annealing method, and active matrix substrate production method | |
| WO2021181700A1 (ja) | レーザアニール装置およびレーザアニール方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |