CN102844839B - 激光退火方法、装置以及微透镜阵列 - Google Patents

激光退火方法、装置以及微透镜阵列 Download PDF

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Publication number
CN102844839B
CN102844839B CN201180020284.5A CN201180020284A CN102844839B CN 102844839 B CN102844839 B CN 102844839B CN 201180020284 A CN201180020284 A CN 201180020284A CN 102844839 B CN102844839 B CN 102844839B
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laser
lenticule
group
row
amorphous silicon
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Expired - Fee Related
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CN201180020284.5A
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Chinese (zh)
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CN102844839A (zh
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水村通伸
渡边由雄
畑中诚
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V Technology Co Ltd
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V Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
CN201180020284.5A 2010-04-23 2011-04-11 激光退火方法、装置以及微透镜阵列 Expired - Fee Related CN102844839B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-100298 2010-04-23
JP2010100298A JP5495043B2 (ja) 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ
PCT/JP2011/058990 WO2011132559A1 (ja) 2010-04-23 2011-04-11 レーザアニール方法、装置及びマイクロレンズアレイ

Publications (2)

Publication Number Publication Date
CN102844839A CN102844839A (zh) 2012-12-26
CN102844839B true CN102844839B (zh) 2015-08-26

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JP (1) JP5495043B2 (enExample)
KR (1) KR101773219B1 (enExample)
CN (1) CN102844839B (enExample)
TW (1) TWI513530B (enExample)
WO (1) WO2011132559A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10811286B2 (en) 2016-09-28 2020-10-20 Sakai Display Products Corporation Laser annealing device and laser annealing method
WO2018109912A1 (ja) * 2016-12-15 2018-06-21 堺ディスプレイプロダクト株式会社 レーザーアニール装置、レーザーアニール方法及びマスク
CN110462787A (zh) * 2017-01-24 2019-11-15 堺显示器制品株式会社 激光退火装置、激光退火方法和掩模
US11121262B2 (en) 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same
CN110870078A (zh) 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
WO2019102548A1 (ja) * 2017-11-22 2019-05-31 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法
CN108227376A (zh) * 2018-01-03 2018-06-29 京东方科技集团股份有限公司 一种微结构的制备方法、压印模版、显示基板
CN111788658A (zh) * 2018-03-07 2020-10-16 堺显示器制品株式会社 激光退火装置、激光退火方法以及有源矩阵基板的制造方法
WO2019234856A1 (ja) * 2018-06-06 2019-12-12 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004860A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004859A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
WO2020031309A1 (ja) 2018-08-08 2020-02-13 堺ディスプレイプロダクト株式会社 薄膜トランジスタおよびその製造方法
CN112916873B (zh) * 2021-01-26 2022-01-28 上海交通大学 基于脉冲激光驱动的微滴三维打印系统及方法
CN114799225B (zh) * 2022-05-05 2023-05-23 上海交通大学 脉冲激光驱动金属微滴打印系统及调节方法
KR102738691B1 (ko) * 2022-12-06 2024-12-05 (주)알엔알랩 기판 구조체에 대한 레이저 열처리 방법 및 이를 적용한 전자 소자의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001269789A (ja) * 2000-01-20 2001-10-02 Komatsu Ltd レーザ加工装置
JP2003109911A (ja) * 2001-10-01 2003-04-11 Sharp Corp 薄膜処理装置、薄膜処理方法および薄膜デバイス
JP2004311906A (ja) * 2003-04-10 2004-11-04 Phoeton Corp レーザ処理装置及びレーザ処理方法
CN1637597A (zh) * 2003-12-29 2005-07-13 Lg.菲利浦Lcd株式会社 激光掩模以及使用其的结晶方法
CN101189097A (zh) * 2005-06-01 2008-05-28 飞腾股份有限公司 激光加工装置及激光加工方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
JP3239314B2 (ja) * 1994-09-16 2001-12-17 日本板硝子株式会社 平板レンズアレイおよびそれを用いた液晶表示素子
US6625181B1 (en) * 2000-10-23 2003-09-23 U.C. Laser Ltd. Method and apparatus for multi-beam laser machining
JP2008294186A (ja) * 2007-05-24 2008-12-04 Shimadzu Corp 結晶化装置および結晶化方法
JP5145598B2 (ja) * 2008-09-29 2013-02-20 株式会社ブイ・テクノロジー レーザ加工方法及それに使用する装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001269789A (ja) * 2000-01-20 2001-10-02 Komatsu Ltd レーザ加工装置
JP2003109911A (ja) * 2001-10-01 2003-04-11 Sharp Corp 薄膜処理装置、薄膜処理方法および薄膜デバイス
JP2004311906A (ja) * 2003-04-10 2004-11-04 Phoeton Corp レーザ処理装置及びレーザ処理方法
CN1637597A (zh) * 2003-12-29 2005-07-13 Lg.菲利浦Lcd株式会社 激光掩模以及使用其的结晶方法
CN101189097A (zh) * 2005-06-01 2008-05-28 飞腾股份有限公司 激光加工装置及激光加工方法

Also Published As

Publication number Publication date
JP5495043B2 (ja) 2014-05-21
TWI513530B (zh) 2015-12-21
KR20130065661A (ko) 2013-06-19
KR101773219B1 (ko) 2017-08-31
TW201143949A (en) 2011-12-16
JP2011233597A (ja) 2011-11-17
WO2011132559A1 (ja) 2011-10-27
CN102844839A (zh) 2012-12-26

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