WO2011129272A1 - Matériau de fixation pour montage de puces semi-conductrices, film de fixation pour montage de puces semi-conductrices, procédé de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur - Google Patents

Matériau de fixation pour montage de puces semi-conductrices, film de fixation pour montage de puces semi-conductrices, procédé de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur Download PDF

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Publication number
WO2011129272A1
WO2011129272A1 PCT/JP2011/058883 JP2011058883W WO2011129272A1 WO 2011129272 A1 WO2011129272 A1 WO 2011129272A1 JP 2011058883 W JP2011058883 W JP 2011058883W WO 2011129272 A1 WO2011129272 A1 WO 2011129272A1
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Prior art keywords
semiconductor chip
bonding
adhesive material
semiconductor
semiconductor device
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PCT/JP2011/058883
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English (en)
Japanese (ja)
Inventor
幸平 竹田
石澤　英亮
千鶴 金
畠井　宗宏
善雄 西村
久敏 岡山
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積水化学工業株式会社
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Priority to JP2011522345A priority Critical patent/JP4922474B2/ja
Priority to CN201180018592.4A priority patent/CN102834907B/zh
Priority to KR1020127024134A priority patent/KR20130064043A/ko
Publication of WO2011129272A1 publication Critical patent/WO2011129272A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin

Definitions

  • the present invention relates to an adhesive material for bonding a semiconductor chip that can manufacture a highly reliable semiconductor device by controlling the fillet shape so that it does not become a convex shape.
  • the present invention also provides a semiconductor chip bonding adhesive film made of the semiconductor chip bonding adhesive material, a method of manufacturing a semiconductor device using the semiconductor chip bonding adhesive material or the semiconductor chip bonding adhesive film, and the semiconductor.
  • the present invention relates to a semiconductor device obtained by a device manufacturing method.
  • connection terminals pads made of solder or the like
  • a method is used in which a semiconductor chip having a plurality of bumps is connected to another semiconductor chip or a substrate through the bumps and then filled with an underfill.
  • undercuring under shrinkage or under reflow test or thermal cycle test for example, due to a difference in coefficient of linear expansion between the semiconductor chip and the substrate, Stress may concentrate on the interface of the fill and cracks may occur.
  • Patent Document 1 discloses a semiconductor element, a substrate on which the semiconductor element is mounted, and a sealing resin that seals a circuit formation surface formed on the semiconductor element.
  • a side surface covering portion that covers the outer peripheral side surface of the semiconductor element is provided.
  • Such a side surface covering portion covering the outer peripheral side surface of the semiconductor element is generally called a fillet.
  • the height of the side surface covering portion from the circuit formation surface is within a predetermined range in order to more reliably suppress the occurrence of cracks.
  • Patent Document 2 discloses a specific flip in which a sealing resin is injected between a circuit board and a semiconductor chip, and a sealing resin is applied to an outer peripheral side portion of the semiconductor chip to form a fillet portion.
  • a chip semiconductor package is described.
  • the fillet portion has a structure in which the surface forms an inclined surface extending outward from the upper edge of the outer peripheral side portion of the semiconductor chip toward the substrate.
  • Patent Document 2 discloses that the inclination angle formed between the inclined surface and the outer peripheral side portion of the semiconductor chip is 50 degrees or less in the vicinity of the upper edge of the outer peripheral side portion of the semiconductor chip. It is described that semiconductor chip breakage is reduced and reduced.
  • the conventional method has a problem that the process of forming the fillet is complicated, and the occurrence of cracks is not sufficiently suppressed by the formation of the fillet.
  • An object of the present invention is to provide an adhesive material for bonding a semiconductor chip that can control a fillet shape so as not to be a convex shape and can manufacture a highly reliable semiconductor device.
  • the present invention also provides a semiconductor chip bonding adhesive film made of the semiconductor chip bonding adhesive material, a method of manufacturing a semiconductor device using the semiconductor chip bonding adhesive material or the semiconductor chip bonding adhesive film, and the semiconductor. It is an object of the present invention to provide a semiconductor device obtained by a device manufacturing method.
  • the 25 ° C. shear modulus Gr measured with a viscoelasticity measuring apparatus is 1 ⁇ 10 6 Pa or more, and the lowest complex viscosity ⁇ * min up to the solder melting point measured with a rheometer is 5 ⁇ 10 1 Pa ⁇ s or less.
  • the complex viscosity ⁇ * (1 Hz) measured at a temperature of 140 ° C., a strain amount of 1 rad, and a frequency of 1 Hz is 0.5-4 of the complex viscosity ⁇ * (10 Hz) measured at a temperature of 140 ° C., a strain amount of 1 rad, and a frequency of 10 Hz.
  • the shape of the cross-sectional view of the fillet is 2 tends to be convex.
  • the angle formed by the side wall of the semiconductor chip and the fillet tends to be 70 ° or more.
  • the inventors tend to cause stress concentration on the convex portion and easily cause peeling or cracking of the semiconductor chip, while forming a non-convex fillet as shown in FIG.
  • a highly reliable semiconductor device can be manufactured by suppressing the concentration of stress.
  • the present inventors can form a non-convex fillet by setting the 25 ° C. shear modulus and the viscosity characteristic of the adhesive material for semiconductor chip bonding to a predetermined range, thereby providing high reliability.
  • the present inventors have found that a semiconductor device can be manufactured and have completed the present invention.
  • a convex fillet means a fillet having an inverted U-shaped bulge as shown in FIG. 2 at the end when a cross section of the fillet is observed.
  • a non-convex fillet means a fillet that does not have an inverted U-shaped bulge as shown in FIG. 2 when the cross section of the fillet is observed.
  • 1 and 2 are cross-sectional views showing an example of a state in which the semiconductor chip 2 is bonded onto the substrate 1 via the bumps 4 using the semiconductor chip bonding adhesive material 3.
  • FIG. 1 shows a state in which a non-convex fillet is formed
  • FIG. 2 shows a state in which a convex fillet is formed.
  • the non-convex shape preferably has an angle ⁇ formed by the side wall of the semiconductor chip and the fillet of less than 70 °.
  • the lower limit of the 25 ° C. shear modulus Gr measured with a viscoelasticity measuring device is 1 ⁇ 10 6 Pa.
  • the 25 ° C. shear modulus Gr measured by the viscoelasticity measuring device is less than 1 ⁇ 10 6 Pa, the resulting semiconductor chip bonding adhesive material is likely to be tacky.
  • the semiconductor chip bonding adhesive material during dicing There is a problem such as cutting scraps adhering to the surface.
  • a preferable lower limit of the 25 ° C. shear modulus Gr measured by the viscoelasticity measuring device is 3 ⁇ 10 6 Pa, and a more preferable lower limit is 5 ⁇ 10 6 Pa.
  • the upper limit of the 25 degreeC shear modulus Gr measured with the said viscoelasticity measuring apparatus is not specifically limited, A preferable upper limit is 1 * 10 ⁇ 8 > Pa.
  • a preferable upper limit of the 25 ° C. shear modulus Gr measured by the viscoelasticity measuring device exceeds 1 ⁇ 10 8 Pa, a part of the adhesive material for bonding a semiconductor chip may be peeled off during dicing.
  • a more preferable upper limit of the 25 ° C. shear modulus Gr measured by the viscoelasticity measuring device is 5 ⁇ 10 7 Pa.
  • the 25 ° C. shear modulus Gr measured with a viscoelasticity measuring device means a value obtained by measuring the adhesive material for bonding a semiconductor chip of the present invention in the form of a film.
  • the method for measuring the 25 ° C. shear modulus Gr with the viscoelasticity measuring device is not particularly limited. For example, using a viscoelasticity measuring device such as a dynamic viscoelasticity measuring device DVA-200 (manufactured by IT Meter Co., Ltd.). And a method of measuring the shear of a film having a thickness of 600 ⁇ m, a width of 6 mm, and a length of 10 mm.
  • the upper limit of the lowest complex viscosity ⁇ * min up to the solder melting point measured with a rheometer is 5 ⁇ 10 1 Pa ⁇ s.
  • the minimum complex viscosity ⁇ * min up to the solder melting point measured with the rheometer exceeds 5 ⁇ 10 1 Pa ⁇ s, the solder is easily washed away by the adhesive material for bonding the semiconductor chip during bonding, and stable conduction is obtained. Absent.
  • the preferable upper limit of the minimum complex viscosity ⁇ * min up to the solder melting point measured with the rheometer is 4.5 ⁇ 10 1 Pa ⁇ s, the more preferable upper limit is 4 ⁇ 10 1 Pa ⁇ s, and the more preferable upper limit is 3.0 ⁇ . 10 1 Pa ⁇ s.
  • the lower limit of the lowest complex viscosity ⁇ * min up to the solder melting point measured with the rheometer is not particularly limited, but the preferred lower limit is 5 ⁇ 10 ⁇ 1 Pa ⁇ s. If the minimum complex viscosity ⁇ * min up to the solder melting point measured with the rheometer is less than 5 ⁇ 10 ⁇ 1 Pa ⁇ s, voids bitten during bonding may remain in the adhesive layer. A more preferable lower limit of the lowest complex viscosity ⁇ * min up to the solder melting point measured with the rheometer is 1 Pa ⁇ s.
  • the lowest complex viscosity ⁇ * min up to the solder melting point measured with a rheometer means a value obtained by measuring the adhesive material for bonding a semiconductor chip of the present invention in the form of a film.
  • the method of measuring the lowest complex viscosity ⁇ * min up to the solder melting point with the rheometer is not particularly limited.
  • the sample thickness is 600 ⁇ m
  • the strain control (1 rad ) A frequency of 10 Hz, a temperature rising rate of 20 ° C./min, a measurement temperature range of 60 ° C. to 300 ° C. and the like.
  • the solder melting point is, for example, a temperature in the range of 230 to 320 ° C.
  • the adhesive material for semiconductor chip bonding of the present invention has a complex viscosity ⁇ * (1 Hz) measured at a temperature of 140 ° C., a strain amount of 1 rad, and a frequency of 1 Hz, and a complex viscosity ⁇ * (measured at a temperature of 140 ° C., a strain amount of 1 rad, and a frequency of 10 Hz). 10 Hz) to 0.5 to 4.5 times.
  • the semiconductor chip bonding adhesive material of the present invention can form a non-convex fillet by its own weight by heating during bonding, and the reliability of the obtained semiconductor device can be improved. Moreover, even if it is applied to other processes such as dicing, there is no problem.
  • the complex viscosity ⁇ * (1 Hz) is less than 0.5 times the complex viscosity ⁇ * (10 Hz)
  • the fluidity of the adhesive material for bonding a semiconductor chip is lowered during bonding, and, for example, bump contact is hindered.
  • Such problems occur.
  • the complex viscosity ⁇ * (1 Hz) exceeds 4.5 times the complex viscosity ⁇ * (10 Hz)
  • a non-convex fillet cannot be formed, and the angle formed between the side wall of the semiconductor chip and the fillet is When it is 70 ° or more, stress concentrates on the convex portion, and the reliability of the obtained semiconductor device is lowered.
  • the complex viscosity ⁇ * (1 Hz) is preferably 0.7 times or more, more preferably 0.9 times or more of the complex viscosity ⁇ * (10 Hz). Preferably, it is 1.0 times or more, more preferably 4.3 times or less, and even more preferably 4.0 times or less.
  • the complex viscosity ⁇ * (1 Hz) and the complex viscosity ⁇ * (10 Hz) mean values obtained by measuring the adhesive material for semiconductor chip bonding of the present invention in the form of a film.
  • the method for measuring the complex viscosity ⁇ * (1 Hz) and the complex viscosity ⁇ * (10 Hz) is not particularly limited.
  • the sample thickness is 600 ⁇ m
  • Examples include a strain control (1 rad), a method of measuring at a frequency of 1 Hz or 10 Hz, and a temperature of 140 ° C.
  • the method for achieving the shear modulus and viscosity characteristics in the above-mentioned ranges is not particularly limited.
  • an epoxy compound, a polymer compound having a functional group capable of reacting with the epoxy compound (Hereinafter, it is also simply referred to as a polymer compound having a functional group capable of reacting) and a method of adjusting the shear modulus and viscosity characteristics by appropriately blending other additive components as necessary is preferable.
  • the type and blending amount of the epoxy compound and the molecular weight and blending amount of the polymer compound having a functional group capable of reacting by controlling the type and blending amount of the epoxy compound and the molecular weight and blending amount of the polymer compound having a functional group capable of reacting, the interaction of each component or the molecular chain of the adhesive material for semiconductor chip bonding is controlled. It is preferable to reduce the entanglement to the limit.
  • an insoluble component such as an inorganic filler, it is possible to increase the affinity for an epoxy compound or the like, or to control the particle size and blending amount of the inorganic filler, thereby adhering for bonding a semiconductor chip. It is preferable to suppress formation of a network structure such as aggregation in the material.
  • the epoxy compound is not particularly limited, and examples thereof include an epoxy resin having a softening point of 150 ° C. or lower, an epoxy resin that is liquid or crystalline solid at room temperature, and the like. These epoxy compounds may be used independently and 2 or more types may be used together.
  • the epoxy resin having a softening point of 150 ° C. or lower include a phenol novolac epoxy resin, a bisphenol A novolac epoxy resin, a cresol novolac epoxy resin, a dicyclopentadienephenol novolac epoxy resin, and a biphenylphenol novolac epoxy resin. Of these, dicyclopentadienephenol novolac type epoxy resin is preferable.
  • Examples of the epoxy resin that is liquid or crystalline solid at room temperature include, for example, bisphenol type epoxy resins such as bisphenol A type, bisphenol F type, bisphenol AD type, and bisphenol S type, dicyclopentadiene type epoxy resins, resorcinol type epoxy resins, and biphenyl.
  • bisphenol type epoxy resins such as bisphenol A type, bisphenol F type, bisphenol AD type, and bisphenol S type
  • dicyclopentadiene type epoxy resins dicyclopentadiene type epoxy resins
  • resorcinol type epoxy resins and biphenyl.
  • Type epoxy resin, anthracene type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin and the like Of these, anthracene type epoxy resins are preferable.
  • the cured product of the adhesive material for bonding a semiconductor chip of the present invention has toughness and can exhibit excellent impact resistance.
  • the polymer compound having a reactive functional group is not particularly limited, and examples thereof include a polymer compound having an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group, and the like. Among these, a polymer compound having an epoxy group is preferable.
  • cured material of the adhesive material for semiconductor chip joining obtained expresses the outstanding toughness.
  • the cured product of the adhesive material for bonding semiconductor chips obtained has excellent mechanical strength, heat resistance and moisture resistance derived from the epoxy compound, and excellent toughness derived from the polymer compound having the epoxy group. By having both, high joint reliability and connection reliability can be expressed.
  • the polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at the terminal and / or side chain (pendant position).
  • an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin.
  • an epoxy group-containing acrylic resin is preferable because it contains a large amount of epoxy groups and the cured product of the obtained adhesive material for joining semiconductor chips can exhibit excellent mechanical strength, heat resistance, toughness, and the like.
  • These polymer compounds having an epoxy group may be used alone or in combination of two or more.
  • the preferred upper limit of the weight average molecular weight of the polymer compound having an epoxy group is 200,000, and the preferred lower limit is 10,000.
  • the weight average molecular weight is less than 10,000, the film-forming property at the time of producing a film using a semiconductor chip bonding adhesive material may be insufficient, and the shape may not be maintained as a film.
  • the weight average molecular weight exceeds 200,000, in the obtained adhesive material for bonding a semiconductor chip, the ratio of the shear elastic modulus and the complex viscosity in the above range may not be achieved.
  • the weight average molecular weight is less than 10,000, since there are many low molecular weight compounds in the obtained adhesive material for bonding a semiconductor chip, voids may easily occur during bonding.
  • the upper limit of the weight average molecular weight of the polymer compound having an epoxy group is more preferably 150,000, still more preferably 100,000, still more preferably 50,000, and particularly preferably 20,000.
  • the said high molecular compound which has an epoxy group may be used independently, and 2 or more types which have a different weight average molecular weight may be used together.
  • a polymer compound having a weight average molecular weight of 50,000 or less and a polymer compound having a weight average molecular weight exceeding 50,000 may be used in combination.
  • the content of the polymer compound having a weight average molecular weight of more than 50,000 has a preferable upper limit of 20 in a total of 100 parts by weight of the epoxy compound and the polymer compound having a reactive functional group. Parts by weight.
  • the content of the polymer compound having a weight average molecular weight exceeding 50,000 exceeds 20 parts by weight, the ratio of the lowest complex viscosity and the complex viscosity described above may be too large in the obtained adhesive material for semiconductor chip bonding. .
  • the preferred lower limit of the epoxy equivalent of the polymer compound having an epoxy group is 200, and the preferred upper limit is 1000.
  • the epoxy equivalent is less than 200, the cured product of the obtained adhesive material for semiconductor chip bonding may be hard and brittle.
  • the epoxy equivalent exceeds 1000, the mechanical strength, heat resistance, and the like of the obtained cured product of the adhesive material for bonding a semiconductor chip may be insufficient.
  • the content of the polymer compound having a functional group capable of reacting is not particularly limited, but a preferable lower limit with respect to 100 parts by weight of the epoxy compound is 1 part by weight, and a preferable upper limit is 500 parts by weight.
  • a preferable lower limit with respect to 100 parts by weight of the epoxy compound is 1 part by weight, and a preferable upper limit is 500 parts by weight.
  • the content of the polymer compound having a functional group capable of reacting is less than 1 part by weight, the cured product of the obtained adhesive material for bonding a semiconductor chip has insufficient toughness when strain due to heat occurs. Bonding reliability may be inferior.
  • the content of the polymer compound having a reactive functional group exceeds 500 parts by weight, the above-described complex viscosity ratio may be too large in the obtained adhesive material for bonding a semiconductor chip, and a cured product The heat resistance of may decrease.
  • the content of the polymer compound having a functional group capable of reacting is preferably 400 parts by weight with respect to 100 parts by weight of the
  • the adhesive material for bonding a semiconductor chip of the present invention preferably contains a curing agent.
  • curing agent is not specifically limited, For example, an amine type hardening
  • the acid anhydride curing agent is not particularly limited, but a bifunctional acid anhydride curing agent is preferable.
  • the bifunctional acid anhydride curing agent is not particularly limited, and examples thereof include phthalic acid derivative anhydrides and maleic anhydride.
  • trifunctional or higher functional acid anhydride curing agent particles may be used as the curing agent.
  • the trifunctional or higher functional acid anhydride curing agent particles are not particularly limited.
  • particles composed of trifunctional acid anhydrides such as trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, methylcyclohexene tetracarboxylic acid.
  • examples thereof include particles composed of tetrafunctional or higher functional acid anhydrides such as acid anhydrides and polyazeline acid anhydrides.
  • the average particle diameter of the trifunctional or higher functional acid anhydride curing agent particles is not particularly limited, but a preferable lower limit is 0.1 ⁇ m and a preferable upper limit is 5 ⁇ m. If the average particle diameter of the trifunctional or higher functional acid anhydride curing agent particles is less than 0.1 ⁇ m, aggregation of the curing agent particles occurs, and the adhesive material for bonding the semiconductor chip thickens to form a convex fillet. There are things that cannot be done. When the average particle diameter of the above-mentioned trifunctional or higher acid anhydride curing agent particles exceeds 5 ⁇ m, in the obtained adhesive material for bonding a semiconductor chip, the curing agent particles cannot be sufficiently diffused during curing, resulting in curing failure. Sometimes.
  • the content of the curing agent is not particularly limited, but a total of 100 of the epoxy compound and the polymer compound having a reactive functional group.
  • a preferred lower limit relative to parts by weight is 5 parts by weight, and a preferred upper limit is 150 parts by weight. If the content of the curing agent is less than 5 parts by weight, the resulting semiconductor chip bonding adhesive material may not be sufficiently cured. When content of the said hardening
  • the content of the curing agent is preferably 10 parts by weight and more preferably 140 parts by weight with respect to a total of 100 parts by weight of the epoxy compound and the polymer compound having a reactive functional group.
  • curing agent contains the said bifunctional acid anhydride hardening
  • these compounding ratios are not specifically limited,
  • the value is less than 0.1, the effect of adding the trifunctional or higher functional acid anhydride curing agent particles may not be sufficiently obtained.
  • the above value exceeds 10 the cured product of the obtained adhesive material for semiconductor chip bonding becomes fragile, and sufficient adhesion reliability may not be obtained.
  • a more preferred lower limit of the above value is 0.2, and a more preferred upper limit is 8.
  • the adhesive material for bonding a semiconductor chip of the present invention may contain a curing accelerator.
  • the said hardening accelerator is not specifically limited, An imidazole compound is preferable. Since the said imidazole compound has high reactivity with the said epoxy compound, quick curing property improves the adhesive material for semiconductor chip joining obtained by containing the said imidazole compound.
  • the imidazole compound is not particularly limited.
  • 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group an imidazole compound in which basicity is protected with isocyanuric acid (trade name “2MA-OK”, Shikoku, Japan) Kasei Kogyo Co., Ltd.), 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine (trade name “2MZ-A”, manufactured by Shikoku Kasei Kogyo Co., Ltd.), 2- Examples include phenyl-4-methyl-5-hydroxymethylimidazole (trade name “2P4MHZ”, manufactured by Shikoku Kasei Kogyo Co., Ltd.), Fuji Cure 7000 (Fuji Kasei Kogyo Co., Ltd.), and the like.
  • These imidazole compounds may be used independently and 2 or more
  • the content of the curing accelerator is not particularly limited, but the epoxy compound and the polymer compound having the reactive functional group A preferable lower limit with respect to 100 parts by weight in total is 0.3 part by weight, and a preferable upper limit is 8 parts by weight.
  • the content of the curing accelerator is less than 0.3 parts by weight, the obtained adhesive material for joining a semiconductor chip may not be sufficiently cured.
  • the content of the curing accelerator is more than 8 parts by weight, in the obtained adhesive material for bonding a semiconductor chip, unreacted curing accelerator oozes out to the adhesive interface, which may reduce the bonding reliability.
  • the adhesive material for joining a semiconductor chip of the present invention may contain an inorganic filler.
  • an inorganic filler By containing the inorganic filler, it is possible to reduce the linear expansion coefficient of the cured product of the obtained adhesive material for bonding semiconductor chips, and to generate stress on the bonded semiconductor chips and cracks in conductive parts such as solder. Can be satisfactorily prevented.
  • the inorganic filler is not particularly limited, and examples thereof include silica such as fumed silica and colloidal silica, alumina, aluminum nitride, boron nitride, silicon nitride, glass powder, and glass frit.
  • the inorganic filler preferably has a hydrocarbon-containing group having 1 to 10 carbon atoms on the surface.
  • the minimum complex viscosity can be increased even if the amount of the inorganic filler is increased in the obtained adhesive material for semiconductor chip bonding. Can be reduced. It is also easy to achieve a complex viscosity ratio in the range described above.
  • the reliability of the obtained semiconductor device can be further improved by blending the semiconductor chip bonding adhesive material with the inorganic filler having the hydrocarbon-containing group having 1 to 10 carbon atoms on the surface.
  • the above-mentioned range can be obtained by adjusting the blending amount or the blending ratio with other components. If the ratio of the lowest complex viscosity to the complex viscosity can be achieved, it can be used.
  • the hydrocarbon-containing group having 1 to 10 carbon atoms is not particularly limited, but a hexyl group, a methyl group, a phenyl group and the like are preferable.
  • the hydrocarbon-containing group having 1 to 10 carbon atoms is formed on the surface of the inorganic filler using a coupling agent such as a silane coupling agent having the hydrocarbon-containing group having 1 to 10 carbon atoms in the skeleton. It can be introduced by processing.
  • the preferred lower limit of the average particle diameter is 1 nm, and the preferred upper limit is 5 ⁇ m.
  • the average particle diameter of the particulate inorganic filler is less than 1 nm, aggregation of the inorganic filler is likely to occur in the obtained semiconductor chip bonding adhesive material, and the ratio of complex viscosity in the above range cannot be achieved.
  • an adhesive material for joining a semiconductor chip that easily forms a convex fillet may be obtained.
  • the inorganic filler When the average particle diameter of the particulate inorganic filler exceeds 5 ⁇ m, the inorganic filler may be bitten between the electrodes when pressure bonding is performed using the obtained adhesive material for semiconductor chip bonding.
  • the more preferable lower limit of the average particle diameter of the particulate inorganic filler is 5 nm, the more preferable upper limit is 3 ⁇ m, the particularly preferable lower limit is 10 nm, and the particularly preferable upper limit is 1 ⁇ m.
  • the average particle diameter means a particle diameter having a 50% integrated diameter measured by a laser diffraction / scattering particle size distribution measuring apparatus.
  • the semiconductor chip bonding adhesive material of the present invention contains an inorganic filler having a hydrocarbon-containing group having 1 to 10 carbon atoms on the surface
  • the content of the inorganic filler is not particularly limited, but the epoxy compound and The preferable lower limit with respect to 100 parts by weight in total with the polymer compound having a functional group capable of reacting is 5 parts by weight, and the preferable upper limit is 500 parts by weight. If the content of the inorganic filler is less than 5 parts by weight, the effect of adding the inorganic filler may be hardly obtained.
  • the content of the inorganic filler exceeds 500 parts by weight, the linear expansion coefficient of the cured product of the obtained adhesive material for semiconductor chip bonding decreases, but at the same time, the shear elastic modulus increases to form a non-convex fillet. There are things you can't do. As a result, stress on the bonded semiconductor chips and cracks in the conductive portion such as solder may easily occur.
  • the content of the inorganic filler having a hydrocarbon-containing group having 1 to 10 carbon atoms on the surface is more preferably lower limit with respect to 100 parts by weight in total of the epoxy compound and the polymer compound having a reactive functional group. 10 parts by weight, a more preferred upper limit is 400 parts by weight, a still more preferred lower limit is 15 parts by weight, and a still more preferred upper limit is 300 parts by weight.
  • the adhesive material for bonding a semiconductor chip of the present invention contains an inorganic filler having no hydrocarbon-containing group having 1 to 10 carbon atoms on its surface
  • the content of the inorganic filler is not particularly limited
  • the preferable lower limit with respect to a total of 100 parts by weight of the epoxy compound and the polymer compound having a reactive functional group is 5 parts by weight
  • the preferable upper limit is 200 parts by weight.
  • the semiconductor chip bonding adhesive material of the present invention contains an inorganic filler having an average particle diameter of 10 nm or less
  • the content of the inorganic filler is not particularly limited, but the above-mentioned regardless of the presence or absence of surface treatment.
  • the amount is preferably 50 parts by weight or less based on 100 parts by weight of the total of the epoxy compound and the polymer compound having a functional group capable of reacting.
  • the adhesive material for bonding a semiconductor chip of the present invention may contain a diluent as long as the effects of the present invention are not impaired.
  • the said diluent is not specifically limited,
  • cured material at the time of heat-hardening of the adhesive material for semiconductor chip joining is preferable.
  • a reactive diluent having two or more functional groups in one molecule is more preferable in order not to deteriorate the adhesion reliability of the obtained adhesive material for bonding a semiconductor chip.
  • Examples of the reactive diluent having two or more functional groups in one molecule include aliphatic epoxy, ethylene oxide modified epoxy, propylene oxide modified epoxy, cyclohexane epoxy, dicyclopentadiene epoxy, phenol epoxy and the like. Can be mentioned.
  • the content of the diluent is not particularly limited, but a total of 100 of the epoxy compound and the polymer compound having a reactive functional group.
  • the preferable lower limit with respect to parts by weight is 1 part by weight, and the preferable upper limit is 300 parts by weight. If the content of the diluent is less than 1 part by weight, the effect of adding the diluent may be hardly obtained. If the content of the diluent exceeds 300 parts by weight, the cured product of the obtained adhesive material for joining semiconductor chips becomes hard and brittle, and thus the adhesion reliability may be inferior.
  • the content of the diluent is more preferably a lower limit of 5 parts by weight and a more preferable upper limit of 200 parts by weight with respect to a total of 100 parts by weight of the epoxy compound and the polymer compound having a reactive functional group.
  • the semiconductor chip bonding adhesive material of the present invention may contain an inorganic ion exchanger, if necessary.
  • inorganic ion exchangers examples of commercially available products include IXE series (manufactured by Toagosei Co., Ltd.).
  • the adhesive material for bonding a semiconductor chip of the present invention contains the inorganic ion exchanger
  • the content of the inorganic ion exchanger is not particularly limited, but the preferred lower limit in the adhesive material for bonding a semiconductor chip of the present invention is 1 weight. %, And a preferred upper limit is 10% by weight.
  • the adhesive material for semiconductor chip bonding of the present invention may contain additives such as an anti-bleeding agent, a silane coupling agent, an adhesion imparting agent such as an imidazole silane coupling agent, and a thickener as necessary. Good.
  • the method for producing the semiconductor chip bonding adhesive material of the present invention is not particularly limited. For example, a predetermined amount of the epoxy compound, the polymer compound having a reactive functional group, the curing agent, the inorganic filler, and the like is blended. And a method of mixing them.
  • the method of mixing is not particularly limited, and examples thereof include a method of mixing using a homodisper, a universal mixer, a Banbury mixer, a kneader, and the like.
  • the adhesive material for bonding a semiconductor chip of the present invention is not particularly limited. For example, it is used when a wafer or a semiconductor chip is mounted on another wafer, another semiconductor chip or a substrate.
  • the adhesive material for bonding a semiconductor chip of the present invention is preferably used for flip chip mounting, and an adhesive layer is pre-mounted on a wafer, a semiconductor chip or a substrate rather than flip chip mounting in which an underfill is filled after electrode bonding. More preferably, it is used for flip chip mounting.
  • a method for manufacturing a semiconductor device using the semiconductor chip bonding adhesive material of the present invention is not particularly limited. For example, an adhesive solution prepared by adding a solvent to the semiconductor chip bonding adhesive material of the present invention is applied to a wafer. And a method of drying the solvent to form a film. Such a method of manufacturing a semiconductor device is also one aspect of the present invention.
  • the solvent examples include medium-boiling solvents or high-boiling solvents having a boiling point of about 120 to 250 ° C. such as propylene glycol methyl ether acetate.
  • a method of applying an adhesive solution prepared by adding a solvent to the adhesive material for bonding semiconductor chips of the present invention to a wafer is not particularly limited, and examples thereof include spin coating and screen printing.
  • the adhesive material for bonding a semiconductor chip of the present invention when the adhesive material for bonding a semiconductor chip of the present invention does not contain a solvent, for example, the adhesive material for bonding a semiconductor chip of the present invention
  • coat to a wafer and make into a film by B staging agent or exposure, etc. are also mentioned.
  • the adhesive film for joining semiconductor chips comprising the adhesive material for joining semiconductor chips of the present invention is also one aspect of the present invention.
  • the thickness of the adhesive film for bonding a semiconductor chip of the present invention is not particularly limited, but a preferable lower limit is 2 ⁇ m and a preferable upper limit is 500 ⁇ m. If the thickness is less than 2 ⁇ m, a smooth film may not be obtained due to the inclusion of foreign matter. When the thickness exceeds 500 ⁇ m, the solvent tends to remain in the obtained adhesive film for semiconductor chip bonding, and bubbles may be generated during pressure bonding and curing.
  • the method for producing the adhesive film for semiconductor chip bonding of the present invention is not particularly limited.
  • a method of forming a film after preparing an adhesive solution by quantitatively blending and mixing is mentioned.
  • the method of mixing is not particularly limited, and examples thereof include a method of mixing using a homodisper, a universal mixer, a Banbury mixer, a kneader, and the like.
  • the method for forming the film is not particularly limited.
  • the adhesive solution is applied onto the separator using a die coater, bar coater, gravure coater, slit coater, or the like.
  • a die coater bar coater, gravure coater, slit coater, or the like.
  • the method include drying the solvent by heating and the like after the processing.
  • the adhesive film for bonding a semiconductor chip of the present invention is not particularly limited. For example, it is used when a wafer or a semiconductor chip is mounted on another wafer, another semiconductor chip or a substrate.
  • the adhesive film for bonding a semiconductor chip of the present invention is preferably used for flip chip mounting, and an adhesive layer is previously mounted on a wafer, a semiconductor chip or a substrate rather than flip chip mounting in which an underfill is filled after electrode bonding. More preferably, it is used for flip chip mounting.
  • the adhesive film for bonding a semiconductor chip of the present invention can control the fillet shape so that it does not become a convex shape, a highly reliable semiconductor device is manufactured by using the adhesive film for bonding a semiconductor chip of the present invention. can do.
  • the manufacturing method of the semiconductor device using the adhesive film for semiconductor chip bonding of the present invention is not particularly limited.
  • the method for supplying the adhesive film for semiconductor chip bonding of the present invention to a wafer or a semiconductor chip by laminating, the semiconductor of the present invention A method of cutting an adhesive film for chip bonding in accordance with the chip size of the semiconductor chip and supplying it to another semiconductor chip or substrate can be mentioned.
  • Such a method of manufacturing a semiconductor device is also one aspect of the present invention.
  • a semiconductor device obtained by the method for manufacturing a semiconductor device of the present invention wherein a semiconductor chip and another semiconductor chip or a substrate are bonded via an adhesive layer, and a fillet that rises up to a side wall of the semiconductor chip.
  • a semiconductor device which is formed and an angle formed between the side wall of the semiconductor chip and the fillet is less than 70 ° is also one aspect of the present invention. When the angle formed between the side wall of the semiconductor chip and the fillet is 70 ° or more, stress concentrates on the convex portion and the reliability of the semiconductor device is lowered.
  • the adhesive material for semiconductor chip joining which can control a fillet shape so that it may not become convex shape, and can manufacture a highly reliable semiconductor device can be provided.
  • a semiconductor chip bonding adhesive film made of the semiconductor chip bonding adhesive material a method of manufacturing a semiconductor device using the semiconductor chip bonding adhesive material or the semiconductor chip bonding adhesive film, and A semiconductor device obtained by the method for manufacturing the semiconductor device can be provided.
  • Examples 1 to 31 and Comparative Examples 1 to 18 According to the compositions shown in Tables 1 to 5, the following materials were stirred and mixed using a homodisper to prepare an adhesive solution. The adhesive solution was applied onto a release-treated PET film by an applicator, and the solvent was dried to obtain a 100 ⁇ m-thick adhesive film for bonding a semiconductor chip.
  • Epoxy compound / biphenyl type epoxy resin (trade name “YX-4000”, manufactured by Japan Epoxy Resin Co., Ltd.) ⁇ Bisphenol A type epoxy resin (trade name “1004AF”, manufactured by Japan Epoxy Resin Co., Ltd.) ⁇ Dicyclopentadiene type epoxy resin (trade name “HP-7200HH”, manufactured by DIC Corporation) ⁇ Dicyclopentadiene type epoxy resin (trade name “EP-4088S”, manufactured by ADEKA)
  • Inorganic filler / surface phenyl-treated inorganic filler (silica) (trade name “SE-1050-SPT”, manufactured by Admatechs, average particle diameter of 300 nm) ⁇ Surface phenyl-treated inorganic filler (silica) (trade name “SE-2050-SPJ”, manufactured by Admatechs, average particle size 500 nm) ⁇ Surface phenyl-treated inorganic filler (silica) (trade name “SS-01”, manufactured by Tokuyama Corporation, average particle size 100 nm) ⁇ Surface phenyl-treated inorganic filler (silica) (trade name “YA050-MJF”, manufactured by Admatechs, average particle size 50 nm) Surface-untreated inorganic filler (silica) (trade name “SE-1050”, manufactured by Admatechs, average particle size 300 nm) Surface-untreated inorganic filler (silica) (trade name “SE-2050”, manufactured by Admatechs, average particle diameter of 500 nm) ⁇ Un
  • the conduction resistance value (hereinafter referred to as initial resistance) is measured in advance, and moisture absorption is performed at 60 ° C. and 60% RH for 40 hours. After conducting a reflow test by passing through a reflow oven at 260 ° C. three times, the conduction resistance value was measured again. A case where the conduction resistance value after the reflow test was changed by 10% or more from the initial resistance value was regarded as defective, and eight laminates were produced and the number of defects was evaluated.
  • Thermal cycle test 1 The laminate subjected to the reflow test in (5) above was subjected to 1000 cycles of a thermal cycle test at ⁇ 55 to 125 ° C. (30 minutes / 1 cycle), and then the conduction resistance value was measured. The case where the conduction resistance value after the thermal cycle test was changed by 10% or more from the initial resistance value was regarded as defective, and eight laminates were produced and the number of defects was evaluated. The case where the number of defects was 0 was marked as ⁇ , the case where it was 1 as ⁇ , and the case where it was 2 or more as x.
  • Thermal cycle test 2 The laminate subjected to the reflow test in (5) above was subjected to a thermal cycle test of ⁇ 55 to 125 ° C. (30 minutes / 1 cycle) and 3000 cycles, and then the conduction resistance value was measured. The case where the conduction resistance value after the thermal cycle test was changed by 10% or more from the initial resistance value was regarded as defective, and eight laminates were produced and the number of defects was evaluated. When the number of defects was 2 or less, ⁇ , when 3-4, ⁇ , when 5-6, ⁇ , when 7 or more, x.
  • the adhesive material for semiconductor chip joining which can control a fillet shape so that it may not become convex shape, and can manufacture a highly reliable semiconductor device can be provided.
  • a semiconductor chip bonding adhesive film made of the semiconductor chip bonding adhesive material a method of manufacturing a semiconductor device using the semiconductor chip bonding adhesive material or the semiconductor chip bonding adhesive film, and A semiconductor device obtained by the method for manufacturing the semiconductor device can be provided.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne un matériau de fixation pour montage de puces semi-conductrices qui permet de fabriquer un dispositif semi-conducteur très fiable en évitant que le congé prenne une forme convexe. Le matériau de fixation pour puces semi-conductrices a un module de cisaillement (Gr) mesuré avec un dispositif de mesure de viscoélasticité qui est supérieur ou égal à 1.106 Pa à 25 °C ; une viscosité complexe minimale (η*min) jusqu'au point de fusion de la brasure mesurée avec un rhéomètre qui est inférieure ou égale à 5.101 Pa•s ; et une viscosité complexe (η*(1Hz)) mesurée à 140 °C pour une déformation de 1 rad à une fréquence de 1 Hz qui correspond à 0,5-4,5 fois la viscosité complexe (η*(10Hz)) mesurée à 140 °C pour une déformation de 1 rad à une fréquence de 10 Hz.
PCT/JP2011/058883 2010-04-13 2011-04-08 Matériau de fixation pour montage de puces semi-conductrices, film de fixation pour montage de puces semi-conductrices, procédé de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur WO2011129272A1 (fr)

Priority Applications (3)

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JP2011522345A JP4922474B2 (ja) 2010-04-13 2011-04-08 半導体装置
CN201180018592.4A CN102834907B (zh) 2010-04-13 2011-04-08 半导体芯片接合用粘接材料、半导体芯片接合用粘接膜、半导体装置的制造方法及半导体装置
KR1020127024134A KR20130064043A (ko) 2010-04-13 2011-04-08 반도체 칩 접합용 접착 재료, 반도체 칩 접합용 접착 필름, 반도체 장치의 제조 방법, 및 반도체 장치

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JP2010092151 2010-04-13
JP2010-092151 2010-04-13

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KR (1) KR20130064043A (fr)
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US10074583B2 (en) 2014-11-17 2018-09-11 International Business Machines Corporation Circuit module and manufacturing method thereof
WO2018181813A1 (fr) * 2017-03-31 2018-10-04 日立化成株式会社 Composition de résine époxy et dispositif à composant électronique

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CN104508798B (zh) * 2012-07-26 2017-03-08 古河电气工业株式会社 半导体晶片加工用胶带的制造方法以及半导体晶片加工用胶带
JP6364239B2 (ja) * 2014-05-23 2018-07-25 株式会社Adeka 一液型熱硬化性エポキシ樹脂組成物
JP6460896B2 (ja) * 2015-04-21 2019-01-30 積水化学工業株式会社 半導体装置の製造方法
WO2019142423A1 (fr) * 2018-01-17 2019-07-25 セメダイン株式会社 Corps de montage
CN111630640B (zh) * 2018-01-30 2023-04-28 日立化成株式会社 半导体装置的制造方法、膜状粘接剂及粘接片材
KR102553619B1 (ko) * 2018-01-30 2023-07-10 가부시끼가이샤 레조낙 접착제 조성물, 필름형 접착제, 접착 시트 및 반도체 장치의 제조 방법
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WO2014046128A1 (fr) * 2012-09-24 2014-03-27 積水化学工業株式会社 Adhésif pour composants électroniques et procédé de production de dispositif de montage d'une puce à semi-conducteur
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US10074583B2 (en) 2014-11-17 2018-09-11 International Business Machines Corporation Circuit module and manufacturing method thereof
US10679916B2 (en) 2014-11-17 2020-06-09 International Business Machines Corporation Circuit module and manufacturing method thereof
WO2018181813A1 (fr) * 2017-03-31 2018-10-04 日立化成株式会社 Composition de résine époxy et dispositif à composant électronique
JPWO2018181813A1 (ja) * 2017-03-31 2020-02-06 日立化成株式会社 エポキシ樹脂組成物及び電子部品装置
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JPWO2011129272A1 (ja) 2013-07-18
TWI552237B (zh) 2016-10-01
KR20130064043A (ko) 2013-06-17
JP2012089877A (ja) 2012-05-10
TW201140721A (en) 2011-11-16
JP4922474B2 (ja) 2012-04-25
CN102834907B (zh) 2016-03-16

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