WO2011096428A1 - 露光方法、露光装置、パターン形成方法、およびデバイス製造方法 - Google Patents
露光方法、露光装置、パターン形成方法、およびデバイス製造方法 Download PDFInfo
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- WO2011096428A1 WO2011096428A1 PCT/JP2011/052134 JP2011052134W WO2011096428A1 WO 2011096428 A1 WO2011096428 A1 WO 2011096428A1 JP 2011052134 W JP2011052134 W JP 2011052134W WO 2011096428 A1 WO2011096428 A1 WO 2011096428A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/213—Exposing with the same light pattern different positions of the same surface at the same time
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Definitions
- the present invention relates to scanning exposure for transferring a pattern to a photosensitive substrate.
- Liquid crystal display panels are frequently used as display elements for personal computers and televisions. Recently, a method of manufacturing a display panel by patterning a transparent thin film electrode on a flexible polymer sheet (photosensitive substrate) by a photolithography technique has been devised.
- an exposure apparatus used in this photolithography process an exposure apparatus that transfers a mask pattern onto a strip-shaped photosensitive substrate conveyed by roll-to-roll (Roll-to-Roll) (hereinafter referred to as roll-to-roll type exposure) have been proposed (see, for example, Patent Document 1).
- a roll-to-roll type exposure apparatus it is required to improve the throughput for transferring a pattern onto a strip-shaped photosensitive substrate (that is, a long substrate).
- aspects of the present invention are an exposure method, an exposure apparatus, and a pattern formation method that can achieve improvement in throughput of scanning exposure when applied to scanning exposure on a long substrate conveyed by, for example, roll-to-roll. And a device manufacturing method.
- the long substrate is moved along the long direction of the long substrate so as to pass through the first projection region and the second projection region.
- the predetermined magnification and the center interval At least one of a pattern length along the first direction of the pattern and a substrate length of the long substrate from the first projection region to the second projection region is determined.
- Setting, The exposure method characterized by including these is provided.
- an exposure apparatus for projecting an image of a pattern arranged on a first surface onto a long substrate and transferring the pattern onto the long substrate, A stage mechanism for moving the pattern in the first direction along the first surface; An enlarged image of the first partial pattern arranged in the first partial area of the first surface of the pattern is projected to the first projection area at a predetermined magnification, and the first partial area of the pattern is projected from the first partial area to the first.
- a projection optical system for projecting an enlarged image of the second partial pattern arranged in the second partial region with a predetermined center interval in the direction at a predetermined magnification onto a second projection region different from the first projection region;
- the long substrate is moved along the long direction of the long substrate so as to pass through the first projection region and the second projection region.
- An adjustment mechanism for adjusting a substrate length of the long substrate from the first projection region to the second projection region based on the predetermined magnification and the center interval;
- the step of transferring the pattern to the long substrate using the exposure method according to the first aspect, the step of transferring the pattern to the long substrate; And a step of processing the elongated substrate to which the pattern has been transferred.
- the step of transferring the pattern to the long substrate using the exposure apparatus according to the second aspect, the step of transferring the pattern to the long substrate; And a step of processing the elongated substrate to which the pattern has been transferred.
- the pattern forming method in the pattern forming method of forming a plurality of pattern regions on the long substrate along the long direction of the long substrate, Moving the elongate substrate to one side in the elongate direction; Sequentially forming a first pattern region and a second pattern region on the long substrate moved to one side in the long direction,
- the pattern forming method wherein the first pattern region and the second pattern region are different from each other in at least one of a region length in the longitudinal direction and a region width in a width direction orthogonal to the longitudinal direction.
- the step of forming the pattern region on the long substrate using the pattern forming method according to the first aspect, the step of forming the pattern region on the long substrate; And a step of processing the elongate substrate on which the pattern region is formed.
- the scanning exposure by the first projection area and the scanning exposure by the second projection area can be performed in parallel, and as a result, an improvement in throughput of the scanning exposure can be achieved.
- an improvement in throughput of the scanning exposure can be achieved.
- the first transfer pattern by the scanning exposure of the first projection area and the second transfer pattern by the scanning exposure of the second projection area are continuously and repeatedly formed, A plurality of first transfer patterns and second transfer patterns can be formed at intervals.
- the scanning exposure by the first area (first projection area) and the scanning exposure by the second area (second projection area) can be performed in parallel.
- Such an increase in throughput can be achieved.
- the substrate length when forming the first pattern region (first transfer pattern region) and the substrate length when forming the second pattern region (second transfer pattern region) are set to different lengths.
- two transfer pattern regions having different region lengths can be sequentially formed.
- FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to a first embodiment of the present invention. It is a figure which shows schematically the structure of the mask in 1st Embodiment. It is a figure explaining the 1st scanning exposure example. It is a figure which shows schematically a mode that several shot area
- FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to the first embodiment of the present invention.
- roll-to-projection is performed by projecting (transferring) the pattern of the mask M onto the sheet SH while moving the mask M and the strip-shaped sheet SH relative to the projection optical system PL.
- the present invention is applied to a roll type exposure apparatus.
- the Z-axis is in the normal direction of the transfer surface (photosensitive surface; exposed surface) of the sheet SH as a photosensitive long substrate, and the surface of FIG. 1 is parallel to the transfer surface of the sheet SH.
- the Y axis is set in a parallel direction
- the X axis is set in a direction perpendicular to the paper surface of FIG. 1 in a plane parallel to the transfer surface of the sheet SH.
- the exposure apparatus includes an illumination system IL that illuminates a pattern area of a mask M, a mask stage MS that moves while holding the mask M, and projection optics that forms an image of the pattern of the mask M on a sheet SH. Operation of system PL, movement mechanism SC that moves (conveys) sheet SH according to a roll-to-roll system, drive control system DR that drives mask stage MS and movement mechanism SC, and drive control system DR And a main control system CR that controls the entire system.
- the sheet SH is a flexible (flexible) belt-like polymer sheet coated with a photoresist (photosensitive material).
- the illumination light IL (exposure light) is supplied from the light source LS to the illumination system IL.
- exposure light for example, light of i-line (wavelength 365 nm) selected from light emitted from an ultra-high pressure mercury lamp, pulsed light composed of third harmonic of YAG laser (wavelength 355 nm), KrF excimer laser light (wavelength 248 nm) Etc. can be used.
- the illumination system IL includes a collimator lens (not shown), a fly-eye lens (not shown), a condenser optical system (not shown), a mask blind MB as a variable field stop, and an illumination imaging optical system (not shown) in the order of incidence of light. ) Etc.
- the light emitted from the light source LS illuminates the illumination area IR on the mask M via the illumination system IL.
- the illumination region IR has a predetermined outer shape that is elongated along the X direction.
- the light from the illumination area IR of the mask M forms a first projection image of the pattern in the illumination area IR in the first projection area ER1 via the projection optical system PL, and in the Y direction from the first projection area ER1.
- a second projection image of the pattern in the illumination region IR is formed in the second projection region ER2 spaced apart.
- the projection optical system PL forms the first projection area ER1 and the second projection area ER2 on the sheet SH.
- the projection optical system PL is telecentric on the mask M side and the sheet SH side, and has an enlargement magnification from the mask M side to the sheet SH side.
- the shapes of the projection regions (imaging regions) ER1 and ER2 are shapes obtained by enlarging the shape of the illumination region IR with the projection magnification MG of the projection optical system PL.
- the illumination region IR is assumed to be a rectangular region that is elongated along the X direction.
- the projection areas ER1 and ER2 are rectangular areas extending in the X direction and have the same size and the same shape.
- the shape of the illumination region IR, and thus the shapes of the projection regions ER1 and ER2 are variably set according to the shape of the variable opening (light transmission portion) of the mask blind MB in the illumination system IL.
- the mask M is sucked and held on the mask stage MS via a mask holder (not shown).
- a mask side laser interferometer (not shown) having a known configuration is arranged on the mask stage MS.
- the mask side laser interferometer measures the position of the mask stage MS in the X direction, the position in the Y direction, and the rotation angle around the Z axis, and supplies the measurement result to the main control system CR.
- the main control system CR controls the position of the mask stage MS in the X direction, the position and speed in the Y direction as the scanning direction, and the rotation angle around the Z axis through the drive control system DR based on the measured values. To do.
- the sheet SH is conveyed along a predetermined path so as to pass through the projection areas ER1 and ER2 by the action of the moving mechanism SC having a known configuration including a series of rolls.
- the moving mechanism SC moves the sheet SH in the ⁇ Y direction directly below the projection optical system PL, and a first projection area ER1 and a second projection area ER2 are formed on the sheet SH.
- the moving mechanism SC moves the sheet SH immediately below the projection optical system PL in synchronization with the movement of the mask stage MS in the + Y direction at the speed V / MG along the Y direction which is the scanning direction. Move in the Y direction at a speed V.
- the projection optical system PL includes an intermediate imaging optical system GM, a first imaging optical system G1, and a second imaging optical system G2.
- the intermediate imaging optical system GM forms a first intermediate image I1 and a second intermediate image I2 of a pattern illuminated by the illumination area IR in a pattern area (not shown in FIG. 1) of the mask M.
- the first imaging optical system G1 forms a first projection image of a pattern in the first projection region ER1 on the sheet SH based on the light from the first intermediate image I1, and the second imaging optical system G2 Based on the light from the image I2, a second projection image of the pattern is formed in the second projection region ER2 on the sheet SH.
- the mask M is arranged on the mask stage MS so that the pattern area substantially coincides with the object plane of the projection optical system PL.
- the sheet SH is conveyed by the moving mechanism SC along a trajectory whose surface (photosensitive surface) substantially coincides with the image plane of the projection optical system PL.
- the intermediate imaging optical system GM is different from the positive lens group Lp on which light from the pattern area illuminated by the illumination area IR is incident, and the light from the positive lens group Lp is different from each other across the optical axis AXp of the positive lens group Lp.
- a split reflection unit RF that splits the first light and the second light traveling in the direction and reflects the first light and the second light toward the positive lens group Lp is provided.
- a phase grating plate, a vibrating mirror, or the like can be used as the split reflection unit RF.
- the light emitted from the illumination region IR along the optical axis AXp is reflected by the split reflection unit RF through the positive lens unit Lp, and the first light traveling obliquely in the upper left direction on the paper surface of FIG. And the second light traveling to.
- the first light forms a first intermediate image I1 through the positive lens group Lp and the deflecting member MR1
- the second light forms a second intermediate image I2 through the positive lens group Lp and the deflecting member MR2.
- Light from the first intermediate image I1 reaches the first projection region ER1 on the sheet SH via the first imaging optical system G1, and light from the second intermediate image I2 passes through the second imaging optical system G2.
- the second projection area ER2 on the sheet SH is reached.
- first projection image and the second projection image are images that are inverted in the Y direction (scanning direction) of the mask pattern in the illumination region IR.
- the first projection image and the second projection image have the same shape and size, and are formed in the same direction with respect to the X direction and the Y direction.
- a rectangular pattern area PA in which a pattern for an electronic display device is formed is provided on the mask M.
- the dimension along the scanning direction (Y direction) of the pattern area PA, that is, the pattern length is AL.
- the sheet SH which is a photosensitive long substrate, is conveyed at a constant speed along a predetermined path by the action of the moving mechanism SC.
- rectangular shot areas SR1 and SR2 obtained by enlarging the pattern area PA of the mask M with the projection magnification MG of the projection optical system PL are constant. Sequentially formed on the sheet SH at intervals.
- a shot region (or a transferred shot region) to which the pattern of the mask M is transferred via the first imaging optical system G1 of the projection optical system PL is denoted by a reference sign SR1, and the second imaging optical system.
- a shot area (or transferred shot area) to which the pattern of the mask M is transferred via G2 is denoted by reference numeral SR2.
- the shot areas SR1 and the shot areas SR2 are alternately formed along the longitudinal direction (long direction) of the sheet SH.
- the size of each shot region SR1, SR2 along the longitudinal direction of the sheet SH is MG ⁇ AL, and the distance between a pair of adjacent shot regions SR1 and SR2 is Gy.
- the dimension in the scanning direction (Y direction) of the projection areas ER1 and ER2 is linearly increased from 0 to a standard dimension over a certain period from the start of exposure to the shot areas SR1 and SR2.
- the dimension in the scanning direction of the projection areas ER1, ER2 is linearly decreased from the standard dimension to 0 over a certain period until the exposure to SR2 is completed.
- the dimension adjustment of the projection areas ER1 and ER2 is performed by changing the dimension in the scanning direction of the illumination area IR by the action of the mask blind MB in the illumination system IL, for example, according to a known technique.
- the illumination regions IR (or IR1, IR2) and the projection regions ER1, ER2 have a fixed shape (invariable) during the scanning exposure in order to facilitate understanding of the operation.
- the center along the scanning direction of the illumination area IR moves from one end to the other end along the scanning direction of the pattern area PA, that is, the center along the scanning direction of the projection areas ER1 and ER2 is the shot area. It is assumed that the scanning exposure on the shot areas SR1 and SR2 is completed by moving from one end to the other end along the scanning direction of SR1 and SR2.
- FIGS. 1 and 2 show a state where the center of the illumination area IR along the scanning direction is at one end along the scanning direction of the pattern area PA (not shown in FIG. 1), that is, a state at the start of scanning exposure.
- the center of the projection areas ER1 and ER2 along the scanning direction is at one end along the scanning direction of the shot areas SR1 and SR2, that is, at the start of scanning exposure. Shows the state.
- the substrate length SL of the sheet SH from the first projection region ER1 to the second projection region ER2 is the exposure start of the adjacent shot region SR2 from the exposure start end of the shot region SR1.
- the relationship shown in the following equation (1) is satisfied.
- the pattern of the mask M is applied to the shot region SR1 that passes immediately below the first imaging optical system G1 and the shot region SR2 that passes immediately below the second imaging optical system G2.
- scanning exposure scan exposure
- the simultaneous scanning exposure to the pair of shot areas SR1 and SR2 until the illumination area IR reaches the end position located at the end on the ⁇ Y direction side from the start position located at the end on the + Y direction side of the pattern area PA,
- the mask M (and thus the mask stage MS) moves at a required speed in the + Y direction so that the pattern area PA is scanned by the illumination area IR.
- the projection areas ER1 and ER2 are located at the end on the + Y direction side from the start position where the projection areas ER1 and ER2 are located on the ⁇ Y direction side ends.
- the sheet SH moves in the ⁇ Y direction along the path so that the shot areas SR1 and SR2 are scanned by the projection areas ER1 and ER2 until reaching.
- the illumination area IR moves from the ⁇ Y direction end of the pattern area PA to the + Y direction end of the pattern area PA, that is, the illumination area IR returns from the scanning exposure end position to the starting position.
- the mask M is folded back in the ⁇ Y direction.
- the mask M When the mask M is folded back in the ⁇ Y direction, for example, a shutter (not shown) for blocking the imaging light beam is inserted in the optical path immediately after the mask M, and the projection image of the mask pattern is projected in the projection areas ER1 and ER2. Avoid formation.
- the mask pattern projection image may not be formed in the projection areas ER1 and ER2 by closing the variable opening of the mask blind MB in the illumination system IL.
- the projection areas ER1 and ER2 are at the starting position on the ⁇ Y direction side of the shot areas SR1 and SR2 to be scanned and exposed next. It is formed.
- the scanning exposure to the next shot region SR1 and the scanning exposure to the next shot region SR2 are performed simultaneously. Then, the reciprocating movement (scanning movement and folding movement) along the Y direction of the mask M is repeated a plurality of times, thereby continuously moving at a constant speed along a predetermined path as shown in FIG.
- the shot areas SR1 and the shot areas SR2 to which the pattern of the mask M has been transferred are alternately formed at a constant interval Gy.
- the substrate length SL, the projection magnification MG, and the pattern length AL satisfy the relationship expressed by the following equation (2).
- the gap Gy between the pair of adjacent shot regions SR1 and SR2 is set to 0 so that the pair of adjacent shot regions SR1 and SR2 are in contact with each other. ing.
- SL MG ⁇ AL (2)
- the reciprocating movement (scanning movement and folding movement) along the Y direction of the mask M is repeated a plurality of times, thereby making it constant along a predetermined path as shown in FIG.
- the shot area SR1 and the shot area SR2 to which the pattern of the mask M is transferred are alternately formed on the sheet SH that continuously moves at a speed of 5 mm, and as a result, a desired length direction (Y direction) is formed.
- One continuous shot region SR having a length is formed.
- the substrate length SL, the projection magnification MG, and the pattern length AL satisfy the relationship expressed by the following equation (3).
- the pair of adjacent shot regions SR1 and SR2 are set so as to partially overlap.
- the dimension along the scanning direction of the overlapping portion between a pair of adjacent shot regions SR1 and SR2 is represented by MG ⁇ OP.
- SL MG ⁇ (AL-OP) ⁇ MG ⁇ AL (3)
- the reciprocating movement (scanning movement and folding movement) along the Y direction of the mask M is repeated a plurality of times to obtain FIG.
- the shot area SR1 and the shot area SR2 to which the pattern of the mask M is transferred are alternately overlapped with each other on the sheet SH continuously moving at a constant speed along a predetermined path.
- one unbroken shot region SR having a desired length in the longitudinal direction (Y direction) is formed.
- the boundary portions between a pair of adjacent shot regions SR1 and SR2 overlap each other and double exposure is performed.
- scanning exposure is started using a pair of density filters VF as shown in FIG.
- the amount of light in the illumination area IR can be adjusted at the time and at the end, and as a result, the exposure amount in the double exposure area can be controlled.
- the density filter VF is fixedly disposed immediately before or after the mask M so as to cover the region of the dimension OP in the scanning direction from the end portion along the scanning direction of the pattern region PA.
- the density filter VF is configured such that the transmittance decreases monotonously from the inside to the outside of the pattern area PA along the scanning direction.
- a proxy blind fixedly placed immediately before or after the mask M is used in place of the density filter VF, and the exposure amount control in the double exposure region is performed by the defocusing action of the edge.
- the pattern area PA of the mask M includes a periodic pattern having periodicity in the scanning direction over the pattern length AL.
- the method of performing the pattern joint exposure in the scanning direction as in the third scanning exposure example reference can be made to, for example, the disclosure of JP-A-7-283132.
- the mask M is scanned once in the + Y direction, so that the first mask pattern on the shot region SR1 on the sheet SH that moves continuously at a constant speed along a predetermined path is obtained.
- the scanning exposure of one projection image and the scanning exposure of the second projection image of the mask pattern onto the shot region SR2 can be performed simultaneously.
- the shot areas SR1 and the shot areas SR2 can be alternately and continuously formed on the sheet SH. That is, in the first embodiment, it is possible to improve the throughput for scanning exposure on the sheet SH conveyed by roll-to-roll.
- the shot in the first scanning exposure example using the mask M in which the pattern area PA having the pattern length AL that satisfies the relationship represented by the expression (1) is used, the shot is obtained by the scanning exposure of the first projection area ER1.
- a plurality of first transfer patterns transferred to the region SR1 and second transfer patterns transferred to the shot region SR2 by scanning exposure of the second projection region ER2 can be formed at intervals.
- transfer to the shot region SR1 is performed by the second scanning exposure example or the third scanning exposure example using the mask M in which the pattern region PA having the pattern length AL satisfying the relationship represented by the formula (2) or the formula (3) is formed.
- the first transfer pattern to be transferred and the second transfer pattern to be transferred to the shot region SR2 can be formed repeatedly in succession.
- FIG. 9 is a drawing schematically showing a configuration of an exposure apparatus according to the second embodiment of the present invention.
- the second embodiment has a configuration similar to that of the first embodiment.
- a pair of illumination regions IR1 and IR2 spaced apart in the Y direction which is the scanning direction is formed, and the projection optical system PL Is different from the first embodiment. Therefore, in FIG. 9, the same reference numerals as those in FIG. 1 are given to elements having the same functions as the constituent elements in the first embodiment.
- the configuration and operation of the second embodiment will be described with a focus on differences from the first embodiment.
- the light emitted from the light source LS forms on the mask M a pair of illumination regions IR1, IR2 spaced in the Y direction via the illumination system IL.
- the illumination regions IR1 and IR2 have a predetermined outer shape that is elongated along the X direction.
- the light from the first illumination area IR1 of the mask M forms a first projection image of the first pattern in the first illumination area IR1 in the first projection area ER1 via the projection optical system PL, and the first projection.
- a second projection image of the second pattern in the second illumination region IR2 is formed in the second projection region ER2 spaced from the region ER1 in the Y direction.
- the projection optical system PL is telecentric on the mask M side and the sheet SH side, and has an enlargement magnification from the mask M side to the sheet SH side.
- the shapes of the projection regions ER1 and ER2 are shapes obtained by enlarging the shapes of the illumination regions IR1 and IR2 with the projection magnification MG of the projection optical system PL.
- the illumination areas IR1 and IR2 are rectangular areas extending in the X direction and have the same size and the same shape.
- the projection areas ER1 and ER2 are rectangular areas extending in the X direction and have the same size and the same shape.
- the projection optical system PL includes a first imaging optical system G1 and a second imaging optical system G2.
- the first imaging optical system G1 includes a common lens group GC and a first lens group G12.
- the first imaging optical system G1 includes a first lens group G12 and a first pattern illuminated by the first illumination area IR1 in the pattern area (not shown in FIG. 9) of the mask M. Based on the light, a first projection image is formed in the first projection region ER1 on the sheet SH.
- the second imaging optical system G2 includes the common lens group GC and the second lens group G22, and the second image on the sheet SH is based on the light from the second pattern illuminated by the second illumination area IR2 in the pattern area. A second projection image is formed in the projection region ER2.
- the first projection image is an image inverted in the Y direction (scanning direction) of the first pattern in the first illumination region IR1
- the second projection image is Y of the second pattern in the second illumination region IR2. This is an inverted image.
- a pattern area PA having a pattern length AL is provided on the mask M, and rectangular illumination areas IR1 and IR2 are formed on the mask M at intervals.
- the center-to-center distance along the Y direction (scanning direction) of the illumination areas IR1 and IR2, that is, the center distance in the Y direction between the illumination areas IR1 and IR2 is GP.
- the sheet SH is conveyed at a constant speed, and rectangular shot areas SR1 and SR2 obtained by enlarging the pattern area PA with the projection magnification MG are alternately and sequentially formed on the sheet SH.
- the state in which the center along the scanning direction of the first illumination region IR1 is at the end on the + Y direction side along the scanning direction of the pattern region PA, that is, at the start of scanning exposure on the first shot region SR1. Indicates the state.
- a state in which the center of the first projection region ER1 along the scanning direction is at the end on the ⁇ Y direction side of the first shot region SR1, that is, a state at the start of scanning exposure on the first shot region SR1 is shown. Yes.
- the center of the second projection region ER2 along the scanning direction is at a position that is MG ⁇ GP away from the end of the second shot region SR2 on the ⁇ Y direction side by the side of the ⁇ Y direction.
- the substrate length SL of the sheet SH from the first projection region ER1 to the second projection region ER2 satisfies the relationship expressed by the following equation (4). SL> MG ⁇ (AL-GP) (4)
- the illumination area IR1 reaches the end position located at the end on the ⁇ Y direction side from the starting position located at the end on the + Y direction side of the pattern area PA.
- the mask M moves at a required speed in the + Y direction.
- the scanning exposure to the shot area SR2 is started after a predetermined time from the start of the scanning exposure to the shot area SR1.
- the pattern area PA is illuminated until the illumination area IR2 reaches the end position located at the end on the ⁇ Y direction side from the starting position located at the end on the + Y direction side of the pattern area PA.
- the mask M moves at a required speed in the + Y direction so as to be scanned by the region IR2.
- the projection areas ER1 and ER2 are located at the end on the + Y direction side from the start position where the projection areas ER1 and ER2 are located on the ⁇ Y direction side ends.
- the sheet SH moves in the ⁇ Y direction along the path so that the shot areas SR1 and SR2 are scanned by the projection areas ER1 and ER2 until reaching.
- the mask M is folded back in the ⁇ Y direction so that the illumination area IR1 moves to the end on the + Y direction side of the pattern area PA, that is, the illumination area IR1 returns to the starting position of scanning exposure.
- the projection image of the second pattern is prevented from being formed in the projection area ER2 for a certain time from the start of the scanning exposure to the shot area SR1, and the scanning exposure to the shot area SR2 is completed.
- the projection image of the first pattern is prevented from being formed in the projection region ER1 over a certain period of time.
- a projection image of the pattern is prevented from being formed in the projection areas ER1 and ER2.
- the reciprocating movement (scanning movement and folding movement) along the Y direction of the mask M is repeated a plurality of times, thereby continuously moving at a constant speed along a predetermined path as shown in FIG.
- the shot areas SR1 and the shot areas SR2 to which the pattern of the mask M has been transferred are alternately formed at a constant interval Gy.
- the upper limit value of the substrate length SL is not shown in Expression (4), practically, when the gap Gy between the shot areas SR1 and SR2 becomes larger than the dimension MG ⁇ AL of each shot area SR1, SR2. Since the waste of the sheet SH becomes excessive, it is preferable that MG ⁇ (2 ⁇ AL ⁇ GP)> SL.
- the substrate length SL, the projection magnification MG, and the pattern length AL satisfy the relationship represented by the following equation (5).
- the gap Gy between the pair of adjacent shot regions SR1 and SR2 is set to 0, so that the pair of adjacent shot regions SR1 and SR2 are in contact with each other. ing.
- SL MG x (AL-GP) (5)
- the reciprocating movement (scanning movement and folding movement) along the Y direction of the mask M is repeated a plurality of times, so that it is constant along a predetermined path as shown in FIG.
- the shot area SR1 and the shot area SR2 to which the pattern of the mask M is transferred are alternately formed on the sheet SH that continuously moves at a speed of 5 mm, and as a result, a desired length direction (Y direction) is formed.
- One continuous shot region SR having a length is formed.
- the substrate length SL, the projection magnification MG, and the pattern length AL satisfy the relationship represented by the following equation (6).
- the pair of adjacent shot regions SR1 and SR2 are set so as to partially overlap.
- the dimension along the scanning direction of the overlapping portion between a pair of adjacent shot regions SR1 and SR2 is represented by MG ⁇ OP.
- the reciprocating movement (scanning movement and folding movement) along the Y direction of the mask M is repeated a plurality of times to obtain FIG.
- the shot area SR1 and the shot area SR2 to which the pattern of the mask M is transferred are alternately overlapped with each other on the sheet SH continuously moving at a constant speed along a predetermined path.
- one unbroken shot region SR having a desired length in the longitudinal direction (Y direction) is formed.
- the mask pattern on the shot region SR1 on the sheet SH continuously moving at a constant speed along a predetermined path is obtained.
- the scanning exposure of the first projection image and the scanning exposure of the second projection image of the mask pattern onto the shot region SR2 can be performed almost simultaneously.
- the shot areas SR1 and the shot areas SR2 can be alternately and continuously formed on the sheet SH.
- a plurality of second transfer patterns transferred to the shot region SR2 can be formed at intervals.
- the image is transferred to the shot region SR1 by the fifth scanning exposure example or the sixth scanning exposure example using the mask M in which the pattern region PA having the pattern length AL that satisfies the relationship expressed by the formula (5) or the formula (6) is formed
- the first transfer pattern to be transferred and the second transfer pattern to be transferred to the shot region SR2 can be formed repeatedly in succession.
- FIG. 13 is a drawing schematically showing a configuration of an exposure apparatus according to the third embodiment of the present invention.
- the third embodiment has a configuration similar to that of the second embodiment.
- the mask M and the sheet SH move in the same direction during scanning exposure, and the internal configuration of the projection optical system PL is the first. This is different from the second embodiment. Therefore, in FIG. 13, the same reference numerals as those in FIG. 9 are given to elements having the same functions as the constituent elements in the second embodiment.
- the configuration and operation of the third embodiment will be described, focusing on the differences from the second embodiment.
- the projection optical system PL includes an intermediate imaging optical system GM, a first imaging optical system G1, and a second imaging optical system G2.
- the intermediate imaging optical system GM forms a first intermediate image I1 of the first pattern illuminated by the first illumination region IR1 in the pattern region (not shown in FIG. 13) of the mask M, and by the second illumination region IR2.
- the illuminated second intermediate image I2 of the second pattern is formed.
- the first imaging optical system G1 forms a first projection image of a first pattern in the first projection region ER1 on the sheet SH based on the light from the first intermediate image I1, and the second imaging optical system G2
- the second projection image of the second pattern is formed in the second projection region ER2 on the sheet SH based on the light from the second intermediate image I2.
- the first projection image is an image upright in the Y direction (scanning direction) of the first pattern in the first illumination region IR1
- the second projection image is a second pattern in the second illumination region IR2. It is an image upright in the Y direction. Therefore, in the third embodiment, during scanning exposure, the mask M and the sheet SH move in the same direction (the direction in the + Y direction).
- the scanning exposure operation in the third embodiment is the same as the scanning exposure operation in the second embodiment except that the mask M and the sheet SH move in the same direction at the time of scanning exposure, and redundant description is omitted. To do.
- the intermediate imaging optical system GM has a magnification of, for example, 1.25 times, and the first imaging optical system G1 and the second imaging optical system G2 have a magnification of, for example, 2 times.
- the formation of the intermediate magnified images I1 and I2 can ensure the required magnification MG of the projection optical system PL while suppressing the occurrence of aberrations to a small extent.
- the optical path can be easily separated by a deflecting member (for example, a triangular prism PR) disposed in the vicinity of the formation positions of the intermediate images I1 and I2.
- FIG. 14 is a drawing schematically showing a configuration of an exposure apparatus according to the fourth embodiment of the present invention.
- the fourth embodiment has a configuration similar to that of the third embodiment, but the internal configuration of the projection optical system PL is different from that of the third embodiment. Therefore, in FIG. 14, the same reference numerals as those in FIG. 13 are attached to elements having the same functions as the constituent elements in the third embodiment.
- the configuration of the projection optical system PL in the fourth embodiment will be described by focusing on the differences from the third embodiment.
- the center of the first projection region ER1 along the scanning direction is located outside the optical axis of the first imaging optical system G1, and the second projection region ER2 The center in the Y direction is located outside the optical axis of the second imaging optical system G2.
- the center of the first projection region ER1 along the Y direction is located inside the optical axis of the first imaging optical system G1, and the second projection region ER2 The center in the Y direction is located inside the optical axis of the second imaging optical system G2.
- the substrate length SL of the sheet SH from the first projection region ER1 to the second projection region ER2 is reduced.
- the dimension MG ⁇ AL of each of the shot areas SR1 and SR2 along the longitudinal direction of the sheet SH, and thus the dimension along the scanning direction of the pattern area PA to be provided on the mask M, that is, the pattern length AL can be reduced.
- FIG. 15 is a drawing schematically showing a configuration of an exposure apparatus according to the fifth embodiment of the present invention.
- the fifth embodiment has a configuration similar to that of the fourth embodiment, but differs from the fourth embodiment in that a detour path is provided between the first projection region ER1 and the second projection region ER2. . Therefore, in FIG. 15, the same reference numerals as those in FIG. 14 are given to elements having the same functions as the constituent elements in the fourth embodiment.
- the configuration and operation of the fifth embodiment will be described by focusing on the differences from the fourth embodiment.
- the sheet SH moves along a straight path extending along the Y direction between the first projection region ER1 and the second projection region ER2.
- an adjustment mechanism 50 including a plurality of rollers that rotate about an axis extending in the X direction is provided in the middle of the path between the first projection area ER1 and the second projection area ER2. It has been.
- the adjustment mechanism 50 that forms a detour path between the first projection region ER1 and the second projection region ER2 includes an interval adjustment unit 50a that adjusts the roller interval along the Y direction.
- the substrate length SL of the sheet SH from the first projection region ER1 to the second projection region ER2 is based on the distance SLa along the Y direction between the first projection region ER1 and the second projection region ER2. Also, the length becomes longer by the detour route corresponding to the adjustment mechanism 50. In other words, in the fifth embodiment, a configuration is adopted in which the area of the sheet SH that has passed through the first projection area ER1 is moved to the second projection area ER2 via the detour path. As a result, even if the distance SLa is limited to be small due to the configuration of the projection optical system PL, the required substrate length SL can be ensured by the action of the detour path.
- the length of the sheet SH in the detour path is adjusted by the action of the interval adjustment unit 50a of the adjustment mechanism 50, and as a result, the substrate of the sheet SH from the first projection area ER1 to the second projection area ER2.
- a configuration for adjusting the long SL is adopted. Therefore, even if the pattern length PA of the pattern area PA is not changed by exchanging the mask M, the relationship shown in the equation (4), the relationship shown in the equation (5), or the equation based on the projection magnification MG and the center interval GP.
- the substrate length SL of the sheet SH from the first projection region ER1 to the second projection region ER2 can be adjusted so as to satisfy the relationship shown in (6).
- first transfer patterns transferred to the shot area SR1 and second transfer patterns transferred to the shot area SR2 are spaced apart from each other by the fourth scanning exposure example that satisfies the relationship represented by Expression (4).
- Two transfer patterns can be formed repeatedly in succession.
- the region widths RW1 and RW2 along the short direction (direction orthogonal to the longitudinal direction) of the sheet SH are the same, but in the longitudinal direction of the sheet SH.
- the region lengths RL1 and RL2 along are different from each other.
- the two transfer pattern regions SP1 and SP2 having different region lengths in this way are the substrate length SL1 (not shown) when forming the first transfer pattern region SP1 and the second transfer pattern region SP2.
- the substrate length SL2 (reference numeral not shown) is set to different lengths.
- the substrate length SL1 is set so as to satisfy Expression (5) or Expression (6) and the substrate length SL2 satisfies Expression (4), or the substrate length SL1 is set to Expression (4).
- the substrate length SL2 is set so as to satisfy Equation (5) or Equation (6).
- the size of the first illumination region IR1 in the X direction and the size of the second illumination region IR2 in the X direction are set to be different from each other by the action of the mask blind MB.
- the size of ER1 in the X direction and the size of the second projection region ER2 in the X direction are set to be different from each other, two transfer pattern regions having different region widths may be sequentially formed on the sheet SH. it can.
- a position near the pattern surface of the mask M a conjugate position optically conjugate with the pattern surface of the mask M (for example, an intermediate image formation position), or A field stop disposed in the vicinity of the conjugate position can also be used.
- the mask M is moved once in the + Y direction by scanning and moving on the sheet SH that continuously moves along a predetermined path at a constant speed.
- the scanning exposure of the first projection image of the mask pattern onto the shot region SR1 and the scanning exposure of the second projection image of the mask pattern onto the shot region SR2 can be performed in parallel. Further, by repeating the reciprocating movement along the Y direction of the mask M a plurality of times, the shot areas SR1 and the shot areas SR2 can be alternately and continuously formed on the sheet SH. That is, in the fifth embodiment, it is possible to improve the throughput for scanning exposure on the sheet SH conveyed by roll-to-roll.
- a plurality of second transfer patterns transferred to the shot region SR2 by scanning exposure of the region ER2 can be formed at intervals.
- Two transfer patterns can be formed repeatedly in succession.
- the substrate length SL1 (reference numeral is not shown) when forming the first transfer pattern area SP1 and the substrate length SL2 (reference numeral is not shown) when forming the second transfer pattern area SP2.
- the substrate length SL1 and SP2 are set to different lengths, so that two transfer pattern regions SP1 and SP2 having different region lengths can be sequentially formed.
- a path detouring along the YZ plane is formed between the first projection area ER1 and the second projection area ER2 by the action of a plurality of rollers.
- the present invention is not limited to this, and various forms are possible for the specific configuration of the detour path.
- a configuration in which the longitudinal direction of the sheet is deflected between the two projection regions by bending the sheet along the roller side surface (cylindrical surface) is also possible.
- the first projection region and the second projection region are provided, for example, at different positions on the roller side surface, and the optical axes of the projection optical system with respect to each projection region are not parallel to each other.
- the adjusting mechanism 50 is provided in the middle of the path between the first projection region ER1 and the second projection region ER2, thereby providing the fifth. It is also possible to obtain the same effect as the embodiment.
- the substrate length SL of the sheet SH from the first projection region ER1 to the second projection region ER2 is adjusted based on the projection magnification MG and the center interval GP by the action of the adjustment mechanism 50. Therefore, two transfer pattern regions having different region lengths can be sequentially formed on the sheet SH.
- the size of the first projection region ER1 in the X direction and the size of the second projection region ER2 in the X direction are set to different sizes by the action of the field stop.
- two transfer pattern regions having different region widths can be sequentially formed on the sheet SH.
- the first field stop and the illumination region IR and the second projection arranged in the optical path between the illumination region IR and the first projection region ER1. It is necessary to provide a second field stop arranged in the optical path between the region ER2.
- scanning exposure is described based on the mask M provided with a single pattern area PA.
- the present invention is not limited to this.
- scanning exposure using a mask M having a central pattern area PAc sandwiched between a pair of end pattern areas PAa and PAb is also possible.
- the seventh scanning exposure example using the mask M shown in FIG. 21 and the projection optical system PL shown in FIG. 15, for example, will be described below with reference to FIGS.
- a rectangular second end pattern area PAb elongated in the X direction is provided adjacent to the ⁇ Y direction side of the light shielding band 51b.
- the mask M is formed symmetrically with respect to a straight line extending in the X direction and a straight line extending in the Y direction through the center thereof.
- a repetitive pattern such as a display part pattern for a display panel is formed in an area indicated by a broken line 52 in the drawing.
- a pattern for example, mainly a peripheral circuit pattern
- a pattern (for example, mainly a display portion pattern) formed in one end pattern area PAa and corresponding to the central portion of the transfer pattern is formed in the central pattern region PAc, and a pattern (for example, mainly a peripheral circuit pattern) corresponding to the end portion of the transfer pattern.
- the second end pattern area PAb the dimension along the scanning direction (Y direction) of the central pattern area PAc, that is, the pattern length is AL.
- the shapes of the illumination regions IR1, IR2 and the projection regions ER1, ER2 are constant (invariable) during the scanning exposure, and ⁇ in the illumination regions IR1, IR2
- scanning exposure is started, and the end on the + Y direction side of the illumination areas IR1, IR2 Scanning exposure is completed when the pattern area PA, PAa, PAb reaches the ⁇ Y direction side end.
- the seventh scanning exposure example first, scanning exposure of the first end pattern area PAa by the second illumination area IR2 is performed. During the scanning exposure by the illumination region IR2, the first end until the illumination region IR2 reaches the end position located at the end on the ⁇ Y direction side from the start position located at the end on the + Y direction side of the first end pattern region PAa.
- the mask M (and consequently the mask stage MS) moves at a required speed in the + Y direction so that the pattern area PAa is scanned by the illumination area IR2.
- the sheet SH moves in the + Y direction along the path so that the required shot area is scanned by the second projection area ER2. At this time, the projection image of the pattern is not formed in the first projection region ER1.
- FIG. 22 shows a state when the scanning of the first end pattern area PAa by the illumination area IR2 is completed.
- the pattern SAa corresponding to the first end pattern area PAa is transferred to the sheet SH.
- the illumination area IR1 moves outward from the end on the + Y direction side of the central pattern area PAc, that is, the illumination area IR1 from the start position of the scanning exposure to the central pattern area PAc.
- the mask M is folded back in the ⁇ Y direction so as to return to the + Y direction side.
- scanning exposure of the central pattern area PAc by the illumination area IR1 is started.
- the central pattern area PAc reaches the end position located at the ⁇ Y direction side end from the start position where the illumination area IR1 is located at the + Y direction side end of the central pattern area PAc.
- the mask M moves in the + Y direction so as to be scanned by the illumination region IR1.
- the scanning exposure of the central pattern area PAc by the illumination area IR2 is started after a predetermined time delay from the start of the scanning exposure by the illumination area IR1.
- the central pattern area PAc reaches the end position located at the end on the ⁇ Y direction side from the start position where the illumination area IR2 is located at the end on the + Y direction side of the center pattern area PAc.
- the mask M moves in the + Y direction so as to be scanned by the illumination region IR2.
- FIG. 24 shows a state at the start of scanning of the central pattern area PAc by the illumination area IR1.
- FIG. 25 shows a state at the time after the scanning of the central pattern area PAc by the illumination area IR1 is started and before the scanning of the central pattern area PAc by the illumination area IR2 is started.
- the overlapping portion OL1 is formed between the pattern SA1 of the central pattern region PAc obtained by scanning the projection region ER1 and the pattern SAa of the first end pattern region PAa. Transferred onto the sheet SH.
- the pattern SA1 can be transferred so as to be in contact with the pattern SAa.
- FIG. 26 shows a state in which the scanning of the central pattern area PAc by the illumination area IR1 and the scanning of the central pattern area PAc by the illumination area IR2 proceed simultaneously.
- FIG. 27 shows a state immediately before the scanning of the central pattern area PAc by the illumination area IR1 is finished.
- FIG. 28 shows a state at the time when scanning of the central pattern area PAc by the illumination area IR1 is completed.
- an overlap portion OL2 is formed between the pattern SA2 of the central pattern area PAc obtained by scanning the projection area ER2 and the pattern SA1 of the central pattern area PAc obtained by scanning the projection area ER1. It is transferred onto the sheet SH so as to form.
- the pattern SA2 can be transferred so as to be in contact with the pattern SA1.
- the illumination area IR1 is moved outward from the + Y direction end of the second end pattern area PAb, that is, The mask M is folded back in the ⁇ Y direction so that the illumination area IR1 returns to the + Y direction side from the scanning exposure start position for the second end pattern area PAb.
- scanning exposure of the second end pattern area PAb by the illumination area IR1 is started.
- the second end until the illumination area IR1 reaches the end position located at the ⁇ Y direction end from the start position located at the + Y direction end of the second end pattern area PAb.
- the mask M moves in the + Y direction so that the pattern area PAb is scanned by the illumination area IR1.
- FIG. 30 shows a state at the start of scanning of the second end pattern area PAb by the illumination area IR1.
- FIG. 31 shows a state at the time when scanning of the second end pattern area PAb by the illumination area IR1 is completed.
- the pattern SAb of the second end pattern area PAb obtained by scanning the projection area ER1 overlaps with the pattern SA2 of the central pattern area PAc obtained by scanning the projection area ER2. Transferred onto the sheet SH to form OL3.
- the pattern SAb can be transferred so as to be in contact with the pattern SA2.
- a transfer pattern region SP as shown in FIG. 32 is formed on the sheet SH.
- the transfer pattern area SP includes a transfer pattern SAa corresponding to the first end pattern area PAa and a central pattern in order from the leading side (right side in FIG. 32) along the longitudinal direction (horizontal direction in FIG. 32) of the sheet SH. It has a pair of transfer patterns SA1 and SA2 corresponding to the area PAc, and a transfer pattern SAb corresponding to the second end pattern area PAb.
- the transfer patterns SA1 and SA2 are the same pattern.
- the transfer pattern regions for the display of the predetermined size A are spaced one by one. Can be formed apart from each other.
- an outer rectangle indicated by a thick solid line indicates a unit area (exposure area) of the device
- an inner rectangle indicated by a broken line indicates a transfer pattern area of the display unit. Therefore, the area between the rectangle indicated by the solid line and the rectangle indicated by the broken line corresponds to the transfer pattern of the peripheral circuit.
- a transfer pattern region for a display of a predetermined size B as shown by reference numeral 62 can be obtained. Two chamfers can be formed, or a transfer pattern region for an arbitrary size (vertically long) display can be chamfered as indicated by reference numeral 63.
- the seventh scanning exposure example, as indicated by reference numeral 64 two transfer pattern regions for a display having an arbitrary size (super-long landscape) can be taken.
- the scanning exposure process for the peripheral circuit pattern may be performed after the scanning exposure process for the display unit pattern.
- FIGS. 34 and 35 the pattern of the mask M using a plurality of projection optical systems having magnifications arranged in a zigzag pattern along the direction (X direction) orthogonal to the scanning direction (Y direction).
- Multi-scanning exposure in which an image is enlarged and projected on the sheet SH can also be performed.
- FIG. 34 shows an example in which, for example, four projection optical systems PL shown in FIG. 15 are arranged in parallel, but the projection areas ER1 and ER2 are shaped into a trapezoid for multi-scan exposure, and as a result, the illumination area IR1. , IR2 are also shaped into trapezoids.
- the triangular regions at both ends of the trapezoidal projection regions ER1 and ER2 overlap each other when seen in the Y direction between two adjacent projection optical systems, and form an overlapping portion OL4 of the transfer pattern region on the sheet SH.
- the reference symbol Sw is the dimension in the X direction of the portion that can be exposed excluding the triangular regions outside the projection regions ER1 and ER2 at both ends, and indicates the so-called maximum exposure width.
- Reference numeral Smc is a distance along the Y direction of the mask side optical axis of two projection optical systems PL adjacent in the X direction, that is, in the Y direction of the center position of two illumination region pairs IR1 and IR2 adjacent in the X direction. The distance along is shown.
- four pattern areas PA are provided in a staggered pattern at intervals in the X direction. Specifically, the centers of two pattern areas PA adjacent in the X direction are displaced from each other by Smc / (1-1 / MG) along the Y direction.
- the centers of two pattern areas PA adjacent in the X direction are separated in the Y direction by a distance corresponding to the projection magnification MG.
- the disclosure of International Publication No. 2007/108420 can be referred to.
- the aperture diameter in the width direction of the first field stop that defines the size of the magnified image projected onto the first projection area by the first projection optical system, and the second projection optical system onto the second projection area are sequentially formed.
- the number of electronic display devices to be formed on the long sheet and the display unit size are set in the computer that controls the exposure apparatus.
- the exposure of a plurality of types of display device patterns having different display unit sizes is specified by the above parameters, the display device patterns exposed on the long sheet are arranged in the long direction in the order of the display unit sizes. The exposure apparatus is controlled.
- a plurality of default sizes are prepared as initial values as parameters relating to the display unit size set in the computer.
- the computer determines the required length of the required long sheet based on a plurality of preset sizes, the number of devices for each default size, and the distance in the longitudinal direction between the patterns for each device. Calculate.
- the interface for setting the parameters related to the display unit size in the computer has an input form that allows selection of two or more preset sizes prepared in advance, and a size for exposure of a display device pattern of any size. Value entry form.
- the present invention is described based on the projection optical system PL having a specific configuration shown in FIG. 1, FIG. 9, FIG. 13 to FIG.
- various configurations of the specific configuration of the projection optical system are possible.
- the shape of the illumination region IR (IR1, IR2) formed on the mask M is defined by the action of the mask blind MB in the illumination system IL, and as a result, the projection formed on the sheet SH.
- the shapes of the regions ER1 and ER2 are defined.
- a first variable field stop (not shown) is disposed at or near the formation position of the first intermediate image I1, and the formation position of the second intermediate image I2 or the position thereof.
- a configuration in which a second variable field stop (not shown) is arranged in the vicinity is also possible.
- a first variable field stop is disposed at or near the formation position of the first intermediate image I1
- a second variable field stop is disposed at or near the formation position of the second intermediate image I2. It is also possible to configure.
- the scanning direction (Y direction) of the mask M and the scanning direction (Y direction) of the sheet SH are the same direction (not necessarily the same direction).
- the scanning direction of the mask and the scanning direction of the long substrate need not be the same direction, and various forms are possible depending on the configuration of the projection optical system.
- the present invention is applied to a pattern forming method in which the pattern of the mask M is projected and exposed (transferred) onto the sheet SH.
- the present invention is not limited to this.
- the present invention can be similarly applied to pattern formation. Therefore, in the present invention, in the pattern forming method of forming a plurality of pattern regions on the long substrate along the long direction of the long substrate, the long substrate is moved to one side in the long direction.
- the exposure apparatus is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy.
- various optical systems are adjusted to achieve optical accuracy
- various mechanical systems are adjusted to achieve mechanical accuracy
- various electrical systems are Adjustments are made to achieve electrical accuracy.
- the assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus.
- comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus.
- the exposure apparatus may be manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
- FIG. 36 is a flowchart showing a manufacturing process of a semiconductor device.
- a metal film is vapor-deposited on a wafer to be a semiconductor device substrate (step S40), and a photoresist, which is a photosensitive material, is applied onto the vapor-deposited metal film (Ste S42).
- the pattern formed on the mask M is transferred to each shot area on the wafer (step S44: exposure process), and the development of the wafer after the transfer, that is, the pattern is transferred.
- the transferred photoresist is developed (step S46: development step).
- the resist pattern generated on the surface of the wafer in step S46 is used as a mask for wafer processing, and processing such as etching is performed on the surface of the wafer (step S48: processing step).
- the resist pattern is a photoresist layer (transfer pattern layer) in which unevenness having a shape corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment is generated, and the recess penetrates the photoresist layer. It is what you are doing.
- the surface of the wafer is processed through this resist pattern.
- the processing performed in step S48 includes, for example, at least one of etching of the wafer surface or film formation of a metal film or the like.
- step S44 the exposure apparatus of the above-described embodiment performs pattern transfer using a wafer coated with a photoresist as a photosensitive substrate.
- FIG. 37 is a flowchart showing a manufacturing process of a liquid crystal device such as a liquid crystal display element.
- a pattern formation process step S50
- a color filter formation process step S52
- a cell assembly process step S54
- a module assembly process step S56
- predetermined patterns such as a circuit pattern and an electrode pattern are formed on the glass substrate coated with a photoresist as the photosensitive substrate, using the exposure apparatus of the above-described embodiment.
- This pattern forming step includes an exposure step of transferring the pattern to the photoresist layer using the exposure apparatus of the above-described embodiment, and a processing step of processing the photosensitive substrate to which this pattern is transferred. Further, in the processing step for processing the photosensitive substrate, development of the photosensitive substrate to which the pattern has been transferred, that is, development of the photoresist layer on the glass substrate is performed, and a photoresist layer (transfer pattern) corresponding to the pattern is developed. A development step for generating a layer) and a processing step for processing the surface of the glass substrate through the developed photoresist layer. The processing of the surface of the glass substrate in this processing step includes etching the surface of the glass substrate or depositing or applying a predetermined material on the surface of the glass substrate.
- a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three R, G, and B
- a color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning direction.
- a liquid crystal panel liquid crystal cell
- a liquid crystal panel is assembled using the glass substrate on which the predetermined pattern is formed in step S50 and the color filter formed in step S52.
- a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter.
- various components such as an electric circuit and a backlight for performing the display operation of the liquid crystal panel are attached to the liquid crystal panel assembled in step S54.
- the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor device or a liquid crystal device.
- an exposure apparatus for a display device such as an organic EL display or a plasma display, or an image sensor (CCD or the like)
- the present invention can also be widely applied to exposure apparatuses for manufacturing various devices such as micromachines, thin film magnetic heads, and DNA chips.
- the present invention can also be applied to an exposure process (exposure apparatus) when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.
- Adjustment mechanism 50 a Interval adjustment unit LS Light source IL Illumination system IR, IR1, IR2 Illumination area ER1, ER2 Projection area M Mask MS Mask stage PL Projection optical system SH Band-shaped sheet (long substrate) SC moving mechanism DR1, DR2 Drive control system CR Main control system
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Abstract
Description
本願は、2010年2月2日に出願された米国仮出願61/300,574号、及び61/300,599に基づき優先権を主張しその内容をここに援用する。
前記パターンを前記第1面に沿って第1方向に移動させることと、
前記パターンのうち前記第1面の第1部分領域に配置される第1部分パターンの拡大像を第1投影領域に所定倍率で投影することと、
前記パターンのうち前記第1部分領域から前記第1方向に所定の中心間隔を置いた第2部分領域に配置される第2部分パターンの拡大像を、前記第1投影領域と異なる第2投影領域に前記所定倍率で投影することと、
前記パターンの前記第1方向への移動に同期して、前記第1投影領域及び前記第2投影領域を経由するように前記長尺基板を該長尺基板の長尺方向に沿って移動させることと、
前記所定倍率及び前記中心間隔に基づいて、前記パターンの前記第1方向に沿ったパターン長と、前記第1投影領域から前記第2投影領域までの前記長尺基板の基板長との少なくとも一方を設定することと、
を含むことを特徴とする露光方法が提供される。
前記パターンを前記第1面に沿って第1方向に移動させるステージ機構と、
前記パターンのうち前記第1面の第1部分領域に配置される第1部分パターンの拡大像を第1投影領域に所定倍率で投影し、且つ前記パターンのうち前記第1部分領域から前記第1方向に所定の中心間隔を置いた第2部分領域に配置される第2部分パターンの拡大像を、前記第1投影領域と異なる第2投影領域に前記所定倍率で投影する投影光学系と、
前記パターンの前記第1方向への移動に同期して、前記第1投影領域及び前記第2投影領域を経由するように前記長尺基板を該長尺基板の長尺方向に沿って移動させる移動機構と、
前記所定倍率及び前記中心間隔に基づいて、前記第1投影領域から前記第2投影領域までの前記長尺基板の基板長を調整する調整機構と、
を備えていることを特徴とする露光装置が提供される。
前記パターンが転写された前記長尺基板を処理する工程と、を含むことを特徴とするデバイス製造方法が提供される。
前記パターンが転写された前記長尺基板を処理する工程と、を含むことを特徴とするデバイス製造方法が提供される。
前記長尺基板を前記長尺方向の一方側に移動させることと、
前記長尺方向の一方側に移動されている前記長尺基板に第1パターン領域及び第2パターン領域を順次形成することと、を含み、
前記第1パターン領域と前記第2パターン領域とは、前記長尺方向の領域長と前記長尺方向に直交する幅方向の領域幅との少なくとも一方が相互に異なることを特徴とするパターン形成方法が提供される。
前記パターン領域が形成された前記長尺基板を処理する工程と、を含むことを特徴とするデバイス製造方法が提供される。
SL=MG×AL+Gy>MG×AL (1)
SL=MG×AL (2)
SL=MG×(AL-OP)<MG×AL (3)
SL>MG×(AL-GP) (4)
SL=MG×(AL-GP) (5)
SL<MG×(AL-GP) (6)
また、マスクMのY方向に沿った往復移動を複数回に亘って繰り返すことにより、シートSH上にショット領域SR1とショット領域SR2とを交互に連続形成することができる。
すなわち、第5実施形態では、ロール・ツー・ロールで搬送されるシートSHへの走査露光にかかるスループットを向上させることができる。
また、式(5)または式(6)に示す関係を満足する第5走査露光例または第6走査露光例により、ショット領域SR1に転写される第1転写パターンとショット領域SR2に転写される第2転写パターンとを連続して繰り返し形成することができる。
そして、上記パラメータにより、表示部サイズの異なる複数種の表示デバイス用パターンの露光が指定されたときは、長尺シートに露光される表示デバイス用パターンが表示部サイズの順に長尺方向に並ぶように露光装置を制御する。
コンピュータは、設定された複数の既定サイズと、各既定サイズ毎のデバイス個数、及び各デバイス用パターン間の長尺方向の間隔とに基づいて、必要とされる長尺シートの必要な長さを算定する。
また、表示部サイズに関するパラメータをコンピュータに設定するインターフェースには、予め用意された複数の既定サイズから2つ以上を選択可能とする入力フォームと、任意サイズの表示デバイス用パターンの露光のためのサイズ値入力フォームとを含む。
したがって、本発明では、長尺基板上に該長尺基板の長尺方向に沿って複数のパターン領域を形成するパターン形成方法において、前記長尺基板を前記長尺方向の一方側に移動させることと、前記長尺方向の一方側に移動されている前記長尺基板に第1パターン領域及び第2パターン領域を順次形成することと、を含み、前記第1パターン領域と前記第2パターン領域とは、前記長尺方向の領域長と前記長尺方向に直交する幅方向の領域幅との少なくとも一方が相互に異なることが重要である。
50a 間隔調整部
LS 光源
IL 照明系
IR,IR1,IR2 照明領域
ER1,ER2 投影領域
M マスク
MS マスクステージ
PL 投影光学系
SH 帯状のシート(長尺基板)
SC 移動機構
DR1,DR2 駆動制御系
CR 主制御系
Claims (28)
- 第1面に配置されるパターンの像を長尺基板に投影して該長尺基板に前記パターンを転写する露光方法であって、
前記パターンを前記第1面に沿って第1方向に移動させることと、
前記パターンのうち前記第1面の第1部分領域に配置される第1部分パターンの拡大像を第1投影領域に所定倍率で投影することと、
前記パターンのうち前記第1部分領域から前記第1方向に所定の中心間隔を置いた第2部分領域に配置される第2部分パターンの拡大像を、前記第1投影領域と異なる第2投影領域に前記所定倍率で投影することと、
前記パターンの前記第1方向への移動に同期して、前記第1投影領域及び前記第2投影領域を経由するように前記長尺基板を該長尺基板の長尺方向に沿って移動させることと、
前記所定倍率及び前記中心間隔に基づいて、前記パターンの前記第1方向に沿ったパターン長と、前記第1投影領域から前記第2投影領域までの前記長尺基板の基板長との少なくとも一方を設定することと、
を含むことを特徴とする露光方法。 - 前記パターン長と前記基板長との少なくとも一方を設定することは、前記パターン長ALと、前記基板長SLと、前記所定倍率MGと、前記中心間隔GPとの間に、
0<SL≦MG×(AL-GP)
の関係を満足させることを特徴とする請求項1に記載の露光方法。 - 前記パターンの前記第1方向に関する両端部の領域には、互いに同一形状のパターンが形成されていることを特徴とする請求項2に記載の露光方法。
- 前記パターンは、前記第1方向の前記パターン長に亘って該第1方向に周期性を有する周期パターンを含むことを特徴とする請求項2に記載の露光方法。
- 前記パターンを前記第1方向に移動させることは、前記パターンと前記第1方向に隣り合う補助パターンを前記第1面に沿って前記第1方向に移動させることを含み、
前記補助パターンのうち前記第1部分領域または前記第2部分領域に配置される部分補助パターンの拡大像を前記第1投影領域または前記第2投影領域に前記所定倍率で投影することにより前記長尺基板上に形成される補助転写パターンと、前記第1部分パターンの拡大像を前記第1投影領域に投影することにより前記長尺基板上に形成される第1転写パターンと、前記第2部分パターンの拡大像を前記第2投影領域に投影することにより前記長尺基板上に形成される第2転写パターンとが、前記長尺基板上で相互に連結するように露光することを特徴とする請求項2~4のいずれか一項に記載の露光方法。 - 相互に連結された前記第1転写パターンと前記第2転写パターンとからなる転写パターン領域を複数回に亘って繰り返し露光することを特徴とする請求項5に記載の露光方法。
- 前記パターン長と前記基板長との少なくとも一方を設定することは、前記パターン長ALと、前記基板長SLと、前記所定倍率MGと、前記中心間隔GPとの間に、
SL>MG×(AL-GP)
の関係を満足させることを特徴とする請求項1に記載の露光方法。 - 前記パターン長と前記基板長との少なくとも一方を設定することは、前記所定倍率及び前記中心間隔に対応する前記パターン長のパターンが形成されたマスクを準備し、該マスクのパターン面を前記第1面に配置することを含むことを特徴とする請求項1~7のいずれか一項に記載の露光方法。
- 前記長尺基板を前記長尺方向に沿って移動させることは、前記第1投影領域を経由した前記長尺基板の領域を、迂回経路を介して前記第2投影領域まで移動させることを含み、
前記パターン長と前記基板長との少なくとも一方を設定することは、前記迂回経路中の前記長尺基板の長さを前記所定倍率及び前記中心間隔に基づいて設定することを含むことを特徴とする請求項1~8のいずれか一項に記載の露光方法。 - 前記長尺基板を前記長尺方向に沿って移動させることは、前記長尺基板を前記長尺方向の一方側へ継続的に移動させ、
前記パターンを前記第1方向に移動させることは、前記パターンを前記第1方向に往復移動させることを特徴とする請求項1~9のいずれか一項に記載の露光方法。 - 前記長尺基板を前記長尺方向に沿って移動させることは、前記長尺基板を前記一方側へ第1速度で移動させ、
前記パターンを前記第1方向に移動させることは、前記第1方向のうち前記長尺方向の前記一方側と光学的に対応する側へ、前記パターンを前記第1速度及び前記所定倍率に基づく第2速度で移動させることを特徴とする請求項10に記載の露光方法。 - 第1面に配置されるパターンの像を長尺基板に投影して該長尺基板に前記パターンを転写する露光装置であって、
前記パターンを前記第1面に沿って第1方向に移動させるステージ機構と、
前記パターンのうち前記第1面の第1部分領域に配置される第1部分パターンの拡大像を第1投影領域に所定倍率で投影し、且つ前記パターンのうち前記第1部分領域から前記第1方向に所定の中心間隔を置いた第2部分領域に配置される第2部分パターンの拡大像を、前記第1投影領域と異なる第2投影領域に前記所定倍率で投影する投影光学系と、
前記パターンの前記第1方向への移動に同期して、前記第1投影領域及び前記第2投影領域を経由するように前記長尺基板を該長尺基板の長尺方向に沿って移動させる移動機構と、
前記所定倍率及び前記中心間隔に基づいて、前記第1投影領域から前記第2投影領域までの前記長尺基板の基板長を調整する調整機構と、
を備えていることを特徴とする露光装置。 - 前記調整機構は、前記第1投影領域と前記第2投影領域との間に設けられた迂回経路を有し、該迂回経路中の前記長尺基板の長さを前記所定倍率及び前記中心間隔に基づいて調整することを特徴とする請求項12に記載の露光装置。
- 前記移動機構は、前記長尺基板を前記長尺方向の一方側へ継続的に移動させ、
前記ステージ機構は、前記パターンを前記第1方向に往復移動させることを特徴とする請求項12または13に記載の露光装置。 - 前記移動機構は、前記長尺基板を前記一方側へ第1速度で移動させ、
前記ステージ機構は、前記第1方向のうち前記長尺方向の前記一方側と光学的に対応する側へ、前記パターンを前記第1速度及び前記所定倍率に基づく第2速度で移動させることを特徴とする請求項14に記載の露光装置。 - 請求項1~11のいずれか一項に記載の露光方法を用いて、前記パターンを前記長尺基板に転写する工程と、
前記パターンが転写された前記長尺基板を処理する工程と、を含むことを特徴とするデバイス製造方法。 - 請求項12~15のいずれか一項に記載の露光装置を用いて、前記パターンを前記長尺基板に転写する工程と、
前記パターンが転写された前記長尺基板を処理する工程と、を含むことを特徴とするデバイス製造方法。 - 長尺基板上に該長尺基板の長尺方向に沿って複数のパターン領域を形成するパターン形成方法において、
前記長尺基板を前記長尺方向の一方側に移動させることと、
前記長尺方向の一方側に移動されている前記長尺基板に第1パターン領域及び第2パターン領域を順次形成することと、を含み、
前記第1パターン領域と前記第2パターン領域とは、前記長尺方向の領域長と前記長尺方向に直交する幅方向の領域幅との少なくとも一方が相互に異なることを特徴とするパターン形成方法。 - 前記長尺基板を移動させることは、
第1領域及び第2領域を経由するように前記長尺基板を前記長尺方向の一方側へ移動させることを含み、
前記第1パターン領域及び前記第2パターン領域を順次形成することは、
第1面に配置されたパターンを、前記長尺基板の前記一方側への移動に同期して、前記長尺方向に対応する第1方向へ前記第1面に沿って移動させることと、
前記パターンのうち前記第1面の第1部分領域に配置される第1部分パターンの拡大像を前記第1領域に所定倍率で投影することと、
前記パターンのうち前記第1部分領域から前記第1方向に所定の中心間隔を置いた第2部分領域に配置される第2部分パターンの拡大像を前記第2領域に前記所定倍率で投影することと、
前記第1領域から前記第2領域までの前記長尺基板の基板長のうち、前記第1パターン領域を形成する際の第1基板長と、前記第2パターン領域を形成する際の第2基板長とを相互に異なる長さに設定することと、を含むことを特徴とする請求項18に記載のパターン形成方法。 - 前記第1基板長と前記第2基板長とを相互に異なる長さに設定することは、前記第1面に配置される前記パターンの前記第1方向に沿ったパターン長ALと、前記第1基板長SL1と、前記第2基板長SL2と、前記所定倍率MGと、前記中心間隔GPとに関して、
0<SL1≦MG×(AL-GP)
SL2>MG×(AL-GP)
の関係を満足させることを特徴とする請求項19に記載のパターン形成方法。 - 前記第1基板長と前記第2基板長とを相互に異なる長さに設定することは、前記第1面に配置される前記パターンの前記第1方向に沿ったパターン長ALと、前記第1基板長SL1と、前記第2基板長SL2と、前記所定倍率Mと、前記中心間隔GPとに関して、
SL1>MG×(AL-GP)
0<SL2≦MG×(AL-GP)
の関係を満足させることを特徴とする請求項19に記載のパターン形成方法。 - 前記長尺基板を前記長尺方向の一方側へ移動させることは、前記第1領域を経由した前記長尺基板の領域を、迂回経路を介して前記第2領域まで移動させることを含み、
前記第1基板長と前記第2基板長とを相互に異なる長さに設定することは、前記第1基板長を設定する際の前記迂回経路中の前記長尺基板の長さと、前記第2基板長を設定する際の前記迂回経路中の前記長尺基板の長さとを、前記所定倍率及び前記中心間隔に基づいて、相互に異なる長さに設定することを含むことを特徴とする請求項19~21のいずれか一項に記載のパターン形成方法。 - 前記長尺基板を前記長尺方向の一方側へ移動させることは、前記長尺基板を前記一方側へ継続的に移動させ、
前記パターンを前記第1方向に移動させることは、前記パターンを前記第1方向に往復移動させることを特徴とする請求項19~22のいずれか一項に記載のパターン形成方法。 - 前記長尺基板を前記長尺方向の一方側へ移動させることは、前記長尺基板を前記一方側へ第1速度で移動させ、
前記パターンを前記第1方向に移動させることは、前記第1方向のうち前記長尺方向の前記一方側と光学的に対応する側へ、前記パターンを前記第1速度及び前記所定倍率に基づく第2速度で移動させることを特徴とする請求項23に記載のパターン形成方法。 - 前記第1部分パターンの拡大像の前記幅方向に関する第1の大きさと、前記第2部分パターンの拡大像の前記幅方向に関する第2の大きさとを相互に異なる大きさに設定することを含むことを特徴とする請求項19~24のいずれか一項に記載のパターン形成方法。
- 前記第1部分パターンの拡大像を投影することは、第1投影光学系によって前記第1部分パターンを前記所定倍率で投影し、
前記第2部分パターンの拡大像を投影することは、第2投影光学系によって前記第2部分パターンを前記所定倍率で投影し、
前記第1の大きさと前記第2の大きさとを相互に異なる大きさに設定することは、前記第1投影光学系により投影される拡大像の大きさを規定する第1視野絞りの前記幅方向の絞り径と、前記第2投影光学系により投影される拡大像の大きさを規定する第2視野絞りの前記幅方向の絞り径とを相互に異なる大きさに設定することを特徴とする請求項25に記載のパターン形成方法。 - 前記第1パターン領域及び前記第2パターン領域は、電子表示デバイス用パターンが形成された領域であることを特徴とする請求項18~26のいずれか一項に記載のパターン形成方法。
- 請求項18~27のいずれか一項に記載のパターン形成方法を用いて、前記パターン領域を前記長尺基板に形成する工程と、
前記パターン領域が形成された前記長尺基板を処理する工程と、を含むことを特徴とするデバイス製造方法。
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CN201180004420.1A CN102612669B (zh) | 2010-02-02 | 2011-02-02 | 曝光方法、曝光装置、图案形成方法及器件制造方法 |
HK12112827.0A HK1172100A1 (en) | 2010-02-02 | 2012-12-12 | Exposure method, exposure apparatus, pattern forming method, and device manufacturing method |
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US10580545B2 (en) | 2013-09-25 | 2020-03-03 | Asml Netherlands B.V. | Beam delivery apparatus and method |
EP4053635A1 (fr) * | 2021-03-04 | 2022-09-07 | Altix | Préparation d'image pour machine d'insolation de bande et machine d'insolation de bande |
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KR102428750B1 (ko) * | 2017-10-19 | 2022-08-02 | 사이머 엘엘씨 | 단일의 리소그래피 노광 패스로 복수의 에어리얼 이미지를 형성하는 방법 |
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US10580545B2 (en) | 2013-09-25 | 2020-03-03 | Asml Netherlands B.V. | Beam delivery apparatus and method |
EP4053635A1 (fr) * | 2021-03-04 | 2022-09-07 | Altix | Préparation d'image pour machine d'insolation de bande et machine d'insolation de bande |
FR3120454A1 (fr) * | 2021-03-04 | 2022-09-09 | Altix | Préparation d’image pour machine d’insolation de bande |
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JP5644779B2 (ja) | 2014-12-24 |
CN102612669B (zh) | 2015-07-22 |
HK1172100A1 (en) | 2013-04-12 |
KR20120116918A (ko) | 2012-10-23 |
CN102612669A (zh) | 2012-07-25 |
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