WO2011086705A1 - パワー半導体モジュール、電力変換装置および鉄道車両 - Google Patents
パワー半導体モジュール、電力変換装置および鉄道車両 Download PDFInfo
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- WO2011086705A1 WO2011086705A1 PCT/JP2010/050512 JP2010050512W WO2011086705A1 WO 2011086705 A1 WO2011086705 A1 WO 2011086705A1 JP 2010050512 W JP2010050512 W JP 2010050512W WO 2011086705 A1 WO2011086705 A1 WO 2011086705A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L15/00—Methods, circuits, or devices for controlling the traction-motor speed of electrically-propelled vehicles
- B60L15/007—Physical arrangements or structures of drive train converters specially adapted for the propulsion motors of electric vehicles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L3/00—Electric devices on electrically-propelled vehicles for safety purposes; Monitoring operating variables, e.g. speed, deceleration or energy consumption
- B60L3/0023—Detecting, eliminating, remedying or compensating for drive train abnormalities, e.g. failures within the drive train
- B60L3/003—Detecting, eliminating, remedying or compensating for drive train abnormalities, e.g. failures within the drive train relating to inverters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L50/00—Electric propulsion with power supplied within the vehicle
- B60L50/50—Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells
- B60L50/51—Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells characterised by AC-motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L7/00—Electrodynamic brake systems for vehicles in general
- B60L7/10—Dynamic electric regenerative braking
- B60L7/14—Dynamic electric regenerative braking for vehicles propelled by ac motors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L2200/00—Type of vehicles
- B60L2200/26—Rail vehicles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/64—Electric machine technologies in electromobility
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
Definitions
- the present invention relates to a power conversion device applicable to a railway vehicle, and more particularly to a power semiconductor module that can be mounted on this type of power conversion device.
- Patent Document 1 Although not limited to a railway vehicle, as a power semiconductor module applicable to a relatively high output power conversion application, for example, there is one disclosed in Patent Document 1 below.
- a switching element called IGBT Insulated Gate Bipolar Transistor
- FWD Fly Wheel Diode
- a configuration having two pairs of element pairs is disclosed. That is, this power semiconductor module is configured as a so-called “2 in 1” power semiconductor module (see FIGS. 1 to 4 and the like of the same document).
- each pair of elements constituting the 2-in-1 type power semiconductor module (hereinafter referred to as “2-in-1 module” if necessary) is connected in series within the module, the positive side in the inverter and the converter and It can be used as a negative arm element on the negative side. Therefore, for example, if it is a three-phase inverter, it can be constituted by three 2-in-1 modules, so that the size of the device can be reduced.
- the story has not been easy.
- a large current flows mainly in the IGBT side in the power running mode in which the vehicle accelerates, and a large current mainly in the FWD side in the regeneration mode in which power is regenerated and decelerated by the brake. Therefore, the IGBT generates a large amount of heat in the power running mode and the FWD generates a large amount of heat in the regeneration mode.
- the current and switching frequency must be set or controlled so that the junction temperature of the IGBT chip in the powering mode and the junction temperature of the FWD chip in the regeneration mode are lower than the allowable junction temperatures.
- the current 2-in-1 module it is difficult to set the current and switching frequency so that the junction temperature of the FWD chip in the regeneration mode is lower than the allowable junction temperature.
- the size of the IGBT chip and the size of the FWD chip are in a trade-off relationship, it is possible to reduce the size of the IGBT chip and allocate the reduced amount to the FWD chip.
- the chip size of the IGBT is made as small as possible, and further size reduction is a limit because it becomes difficult to secure a current capacity in the power running mode.
- a so-called “1 in 1” power semiconductor module (hereinafter referred to as “1”) is mounted as one set of IGBT and FWD as a power semiconductor module of the same current class. Therefore, it was difficult to further reduce the size of the power conversion device.
- the present invention has been made in view of the above, and an object of the present invention is to provide a power semiconductor module that can be further reduced in size and can be applied to a power conversion device for a railway vehicle.
- an object of this invention is to provide the power converter device provided with the above power semiconductor modules, and the rail vehicle provided with the above power converter devices.
- a power semiconductor module includes a first switching element, a first diode element, and a power semiconductor module applied to a power conversion device for a railway vehicle. And a second element pair in which a second switching element and a second diode element are connected in antiparallel, the first and the second element pairs being connected in antiparallel,
- the second diode element is formed of a wide band gap semiconductor, the first element pair operates as a positive arm of the power converter, and the second element pair serves as a negative arm of the power converter. It is housed in one module so as to operate, and is configured as a 2-in-1 module.
- the power semiconductor module of the present invention it is possible to provide a 2 in 1 type power semiconductor module applicable to a railway vehicle by using the existing 1 in 1 type module without increasing the size. .
- FIG. 1 is a diagram illustrating a schematic functional configuration of a power conversion device according to an embodiment of the present invention.
- FIG. 2 is a perspective view showing a schematic shape of the power semiconductor module according to the present embodiment configured as a 2-in-1 module.
- FIG. 3 is a diagram schematically showing a circuit configuration of the power semiconductor module shown in FIG.
- FIG. 4 is a perspective view showing a schematic shape of a conventionally used 1 in 1 module.
- FIG. 5 schematically shows a circuit configuration of the power semiconductor module shown in FIG.
- FIG. 6 is a diagram showing the direction of the main circuit current that flows mainly in the power running mode.
- FIG. 7 is a diagram showing the direction of the main circuit current that flows mainly in the regeneration mode.
- FIG. 1 is a diagram illustrating a schematic functional configuration of a power conversion device according to an embodiment of the present invention.
- FIG. 2 is a perspective view showing a schematic shape of the power semiconductor module according to the present embodiment configured as a 2-in-1 module.
- FIG. 8 is a circuit diagram of a three-phase inverter configured using six conventional 1 in 1 modules.
- FIG. 9 is a diagram showing an arrangement example of one element pair in the 2-in-1 module of the present embodiment configured using SiC-FWD.
- FIG. 10 is a diagram showing an arrangement example of one element pair in a conventional 2-in-1 module configured using Si-FWD.
- FIG. 11 is a circuit diagram of a three-phase inverter configured by using three 2-in-1 modules according to the present embodiment.
- the inventor of the present application pays attention to an SiC diode that can reduce the on-voltage, and as a result, can also significantly reduce recovery loss, and configures the power conversion device by applying this SiC diode to the 2-in-1 module.
- a power semiconductor module and a power conversion device suitable for railway applications have been derived.
- a power semiconductor module and a power conversion device according to embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.
- FIG. 1 is a diagram illustrating a schematic functional configuration of the power conversion device according to the present embodiment, and illustrates a configuration example of the power conversion device 50 mounted on the railway vehicle 100.
- the power conversion device 50 includes a converter 10, a capacitor 20, and an inverter 30.
- the railway vehicle 100 includes a transformer 6 disposed on the input end side of the power conversion device 50 and connected to the converter 10, and disposed on the output end side of the power conversion device 50 and connected to the inverter 30.
- An electric motor 40 that receives the power supply from 50 and drives the vehicle is mounted.
- an induction motor or a synchronous motor is suitable.
- One end of the primary winding of the transformer 6 is connected to the overhead wire 1 via the current collector 2, and the other end is connected to the rail 4 that is the ground potential via the wheel 3.
- the electric power supplied from the overhead line 1 is input to the primary winding of the transformer 6 through the current collector 2, and the electric power generated in the secondary winding of the transformer 6 is input to the converter 10.
- a positive arm composed of switching elements UPC and VPC (for example, UPC in U phase) and a negative arm composed of switching elements UNC and VNC (for example, UNC in U phase) are connected in series.
- Circuit portion hereinafter referred to as “leg”. That is, the converter 10 includes a single-phase bridge circuit having two sets of legs (for U phase and V phase).
- the converter 10 converts the AC voltage input by PWM control of the switching elements UPC, VPC, UNC, and VNC into a desired DC voltage and outputs it.
- a capacitor 20 serving as a DC power source is connected in parallel to the output terminal of the converter 10, and an inverter 30 that receives the DC voltage of the capacitor 20 and converts it into an AC voltage of an arbitrary voltage and an arbitrary frequency and outputs it is connected. .
- the inverter 30 includes a positive side arm (for example, UPI in the U phase) configured by switching elements UPI, VPI, and WPI and a negative side arm (for example, UNI in the U phase) configured by switching elements UNI, VNI, and WNI. Each has a leg connected in series.
- the inverter 30 includes a three-phase bridge circuit having three sets of legs (for U phase, V phase, and W phase).
- the inverter 30 converts the DC voltage input by PWM control of the switching elements UPI, VPI, WPI, UNI, VNI, and WNI into a desired AC voltage and outputs it.
- FIG. 1 as a suitable example of the power conversion device according to the present embodiment, the case where it is applied to an AC electric vehicle is shown as an example, but the DC input frequently used in subways, suburban electric vehicles, and the like is shown. The same can be applied to an electric vehicle.
- a DC-input electric vehicle the configuration similar to that shown in FIG. 1 can be adopted except that the configurations of the transformer 6 and the converter 10 are not required. Of course, it can be applied to an input electric vehicle.
- FIG. 2 is a perspective view showing a schematic shape of the power semiconductor module according to the present embodiment configured as a 2-in-1 module.
- FIG. 3 is a diagram schematically showing a circuit configuration of the power semiconductor module shown in FIG. is there.
- FIG. 4 is a power semiconductor module shown as a comparative example, and is a perspective view showing a schematic shape of a conventionally used 1 in 1 module.
- FIG. 5 is a diagram schematically showing a circuit configuration of the power semiconductor module shown in FIG.
- a silicon-based IGBT (Si-IGBT) and a silicon-based FWD (Si-FWD) are connected in antiparallel.
- One set of element pairs 72 is accommodated in a package.
- the collector of the Si-IGBT and the cathode of the Si-FWD are connected in the module, and the connection end is drawn out and connected to the collector electrode C provided on the upper surface of the 1 in 1 module 70.
- the emitter of the Si-IGBT and the anode of the Si-FWD are connected in the module, and the connection end is drawn out and connected to the emitter electrode E provided on the upper surface of the 1 in 1 module 70. Yes.
- the 2-in-1 module 60 is based on silicon (Si) -based IGBT (Si-IGBT) and silicon carbide (silicon carbide: SiC).
- Si-IGBT silicon -based IGBT
- SiC silicon carbide
- silicon carbide is an example of a semiconductor called a wide bandgap semiconductor.
- silicon carbide for example, a gallium nitride-based material or a semiconductor formed using diamond is also widely used. It belongs to the band gap semiconductor. Therefore, a configuration using a wide band gap semiconductor other than silicon carbide also forms the gist of the present invention.
- the collector of the Si-IGBT and the cathode of the SiC-FWD are connected in the module, and the connection end is drawn out and provided on the upper surface of the 2-in-1 module 60.
- the collector electrode C1 Connected to the collector electrode C1, and the emitter of the Si-IGBT and the anode of the SiC-FWD are connected in the module, and the connection end is drawn out and connected to the emitter electrode E1 provided on the upper surface of the 2-in-1 module 60 It is configured to be.
- the collector of the Si-IGBT and the cathode of the SiC-FWD are connected in the module, and the connection end is drawn out to the collector electrode C2 provided on the upper surface of the 2in1 module 60.
- the emitter of the Si-IGBT and the anode of the SiC-FWD are connected in the module, and the connection end is drawn out and connected to the emitter electrode E2 provided on the upper surface of the 2-in-1 module 60.
- the power semiconductor module of the present embodiment can be configured as a 2 in 1 module without using an existing 1 in 1 module in a compatible manner by using an existing 1 in 1 module package interchangeably will be described.
- the applied voltage to the U phase and the V phase is a positive period, and the applied voltage of the W phase is negative.
- the IGBT generates heat more than FWD.
- the electric motor 40 serves as a generator, and the current from the electric motor 40 flows into the positive side of the capacitor 20, so that, for example, the induced voltages of the U phase and V phase in the electric motor 40 are positive.
- the induced voltage of the W phase is negative, as shown in FIG. 7, current flows into the capacitor 20 through the FWDs of the switching elements UPI and VPI, and the return current flows to the motor 40 through the FWD of the switching element WNI. Return.
- the FWD generates a large amount of heat as compared with the IGBT.
- the 2-in-1 module used here is composed of a silicon-based IGBT (Si-IGBT) and a silicon-based FWD (Si-FWD).
- Table 2 shows the results when the calorific value is calculated by using the parameters in Table 1 above, further setting the inverter current to 1/2 of the rated current (600 A) and the carrier frequency of the inverter control to 1 kHz. . In order to obtain simple calculation results, power factor and inverter efficiency are not considered.
- each on-loss of the IGBT and FWD is assumed to have a current corresponding to a half cycle flowing through one IGBT, that is, one IGBT and FWD operate only during a half cycle of one cycle.
- the product of voltage and current is divided by 2.
- the temperature increase of the IGBT is 12.5 ° C.
- the temperature increase of the FWD is 30 ° C., and it can be understood that the temperature increase of the FWD is high.
- the cooler is selected so that the module case temperature is 110 ° C. so that the IGBT junction temperature is below the allowable junction temperature.
- 125 ° C./102.5° C. 1.22.
- the cooler when adjusted to have a margin of 20% or more with respect to the cooler when adjusted to the temperature rise of the IGBT. In other words, if an attempt is made to configure a cooler that matches the temperature increase of the FWD, a cooler with higher performance is required, so the size of the cooler increases and the cost of the cooler increases.
- the heat generation amount of a general-purpose 1 in 1 module is calculated using the parameters shown in Table 3 below.
- the 1 in 1 module used here is composed of a silicon-based IGBT (Si-IGBT) and a silicon-based FWD (Si-FWD).
- Si-IGBT silicon-based IGBT
- Si-FWD silicon-based FWD
- this 1 in 1 module has a space as compared with the 2 in 1 module, it is possible to accommodate a module having a smaller diode loss and a smaller thermal resistance than the FWD shown in Table 1.
- the cooler is selected so that the case temperature of the module is 110 ° C., for example.
- the conventional 2-in-1 module has a FWD temperature rise twice as large as the IGBT temperature rise. If the cooling performance is matched to the temperature rise of the IGBT, the temperature rise of the FWD exceeds the allowable value and becomes unusable. On the other hand, if the cooling performance of the cooler is adjusted to the temperature increase of the FWD, the size of the cooler increases and the cost increases. For this reason, in the conventional power converter applied to a rail vehicle, in order to prevent the size of the cooler from increasing and the cost of the cooler from increasing, 6 in 1 modules having a small FWD loss and a small thermal resistance are provided. A three-phase inverter was configured by using one piece (see FIG. 8).
- FIG. 9 is a diagram showing an arrangement example of one element pair in the 2-in-1 module of the present embodiment configured using SiC-FWD.
- FIG. 10 shows an arrangement example of one element pair in a conventional 2-in-1 module configured using Si-FWD as a comparative example.
- the conventional 2-in-1 module as shown in FIG. 10, it is configured by using four IGBT chips and two Si-FWD chips per element pair.
- the occupied area of the Si-FWD chip is about 1 ⁇ 2 (50%) of the occupied area of the IGBT chip.
- the area occupied by the SiC-FWD chip can be made smaller than that of the conventional one.
- the occupied area of the SiC-FWD chip is about the occupied area of the IGBT chip. 1/4 (25%).
- the ON voltage of the FWD can be reduced, so that the recovery loss can be greatly reduced.
- the chip thickness can be further reduced, the thermal resistance is also reduced.
- the temperature increase of FWD can be suppressed like a 1 in 1 type IGBT module, without changing the layout of each chip.
- FWD chip occupied area ratio the ratio of the occupied area of the SiC-FWD chip to the occupied area of the IGBT chip
- the temperature rise of the SiC-FWD chip is almost the same as the temperature rise of the IGBT chip.
- the temperature rise value of the Si-FWD chip in the conventional 2-in-1 module which is 30 ° C. (see Table 2), can be set to a temperature rise value of 1 ⁇ 2 or less. Even when a cooler with a case temperature of 110 ° C. is used, the bonding temperature of the FWD chip can be set to 125 ° C. or less, which is an allowable bonding temperature.
- the allowable operating temperature of the SiC-FWD chip can be raised to 150 ° C. or more, and the area occupied by the SiC-FWD chip can be further reduced. As a result, the module size can be further reduced.
- the module performance can be improved without increasing the existing module size.
- the cooler for SiC can be reduced by increasing the allowable operating temperature of the SiC-FWD chip, the cooler can be reduced in size and cost.
- the significance of the present invention is to provide a 2-in-1 module that can be applied to a power conversion device for railway applications. Therefore, the FWD chip occupation area ratio can be any number as long as this can be realized.
- the SiC-FWD is used. Due to the synergistic effect of the reduction in the occupied area of the chip and the increase in the occupied area of the IGBT chip, the FWD chip occupied area ratio can be further reduced.
- an incidental effect that the chip size of the 2-in-1 module can be reduced can be obtained.
- This effect is obtained by using SiC as the FWD, thereby occupying the area occupied by the FWD chip in the conventional 2-in-1 module. This is because the ratio can be reduced to less than 1 ⁇ 2.
- an error of about ⁇ 10% occurs depending on various design conditions.
- the IGBT is shown as an example of the switching element constituting the 2-in-1 module.
- a MOSFET may be mounted instead of the IGBT. Since the MOSFET has a smaller switching loss than the IGBT, the use of the MOSFET makes it possible to reduce the size and cost of the module and the cooler.
- each SiC-FWD chip is sized to have the same temperature rise as each IGBT chip forming each element pair, the design of the cooler becomes easier, the cooler becomes smaller and the cost is lower. It is effective for conversion.
- the technology of the present embodiment when the technology of the present embodiment is applied to an auxiliary power supply device for a railway vehicle, it is possible to reduce inverter loss under a condition where the load power factor is bad, so the inverter used for the auxiliary power supply device is downsized. Therefore, the apparatus can be reduced in size and cost.
- the present invention enables further miniaturization and is useful as a power semiconductor module and a power conversion device applicable to railway vehicles.
Abstract
Description
まず、本発明の実施の形態にかかる電力変換装置について説明する。図1は、本実施の形態にかかる電力変換装置の概略の機能構成を示す図であり、鉄道車両100に搭載される電力変換装置50の一構成例を示している。同図に示すように、電力変換装置50は、コンバータ10、コンデンサ20およびインバータ30を備えて構成される。鉄道車両100には、電力変換装置50の入力端側に配置されてコンバータ10に接続される変圧器6および、電力変換装置50の出力端側に配置されてインバータ30に接続され、電力変換装置50からの電力供給を受けて車両を駆動する電動機40が搭載されている。なお、電動機40としては、誘導電動機や同期電動機が好適である。
2 集電装置
3 車輪
4 レール
6 変圧器
10 コンバータ
20 コンデンサ
30 インバータ
40 電動機
50 電力変換装置
60 2in1モジュール
62 素子対(第1の素子対)
64 素子対(第2の素子対)
72 素子対
70 1in1モジュール
100 鉄道車両
C,C1,C2 コレクタ電極
E,E1,E2 エミッタ電極
UNC,VNC,WNC,UNI,VNI,WNI,UPC,VPC,WPC,UPI,VPI,WPI スイッチング素子
Claims (11)
- 鉄道車両用の電力変換装置に適用されるパワー半導体モジュールにおいて、
第1のスイッチング素子と第1のダイオード素子とが逆並列に接続されてなる第1の素子対と、
第2のスイッチング素子と第2のダイオード素子とが逆並列に接続されてなる第2の素子対と、
を有し、
前記第1および第2のダイオード素子は、ワイドバンドギャップ半導体により形成され、
前記第1の素子対は前記電力変換装置の正側アームとして動作し、前記第2の素子対は前記電力変換装置の負側アームとして動作するように1つのモジュール内に収容され、2in1モジュールとして構成されていることを特徴とするパワー半導体モジュール。 - 前記各素子対におけるスイッチング素子の占有面積に対するダイオード素子の占有面積の比が15%以上、且つ、45%未満であることを特徴とする請求項1に記載のパワー半導体モジュール。
- 前記第1および第2のダイオード素子は、前記第1および第2のスイッチング素子と温度上昇が同等になるサイズに形成されていることを特徴とする請求項1に記載のパワー半導体モジュール。
- 前記ワイドバンドギャップ半導体は、炭化ケイ素、窒化ガリウム系材料または、ダイヤモンドを用いた半導体であることを特徴とする請求項1~3の何れか1項に記載のパワー半導体モジュール。
- 前記第1および第2のスイッチング素子は、IGBT素子またはMOSFET素子であることを特徴とする請求項4に記載のパワー半導体モジュール。
- 鉄道車両に搭載され、入力された直流電圧または交流電圧を所望の交流電圧に変換して出力する電力変換装置において、
スイッチング素子とダイオード素子とが逆並列に接続されて正側アームを構成する第1の素子対と、スイッチング素子とダイオード素子とが逆並列に接続されて負側アームを構成する第2の素子対とが直列接続されてなるレグを複数組有し、
前記ダイオード素子は、ワイドバンドギャップ半導体により形成され、
前記各レグを構成する第1および第2の素子対は、1つのモジュール内に収容され、2in1モジュールとして構成されていることを特徴とする電力変換装置。 - 前記各素子対におけるスイッチング素子の占有面積に対するダイオード素子の占有面積の比が15%以上、且つ、45%未満であることを特徴とする請求項6に記載の電力変換装置。
- 前記各ダイオード素子は、それぞれの素子対を構成するスイッチング素子と温度上昇が同等になるサイズに形成されていることを特徴とする請求項6に記載の電力変換装置。
- 前記ワイドバンドギャップ半導体は、炭化ケイ素、窒化ガリウム系材料または、ダイヤモンドを用いた半導体であることを特徴とする請求項6~8の何れか1項に記載の電力変換装置。
- 前記各スイッチング素子は、IGBT素子またはMOSFET素子であることを特徴とする請求項9に記載の電力変換装置。
- 請求項6~10の何れか1項に記載の電力変換装置と、
前記電力変換装置からの電力供給を受けて車両を駆動する電動機と、
を備えたことを特徴とする鉄道車両。
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JP2010527274A JP4722229B1 (ja) | 2010-01-18 | 2010-01-18 | パワー半導体モジュール、電力変換装置および鉄道車両 |
BR112012016900-9A BR112012016900A2 (ja) | 2010-01-18 | 2010-01-18 | A power semiconductor module, a power converter, and a rail car |
US13/517,904 US9520802B2 (en) | 2010-01-18 | 2010-01-18 | Power semiconductor module, power converting apparatus and railway car |
KR1020127018045A KR101387515B1 (ko) | 2010-01-18 | 2010-01-18 | 파워 반도체 모듈, 전력 변환 장치, 및 철도 차량 |
EP10843063.8A EP2528094B1 (en) | 2010-01-18 | 2010-01-18 | Power semiconductor module, power conversion device, and rail car |
AU2010342148A AU2010342148B2 (en) | 2010-01-18 | 2010-01-18 | Power semiconductor module, power conversion device, and rail car |
MX2012008026A MX2012008026A (es) | 2010-01-18 | 2010-01-18 | Modulo de semiconductor de potencia, aparato convertidor de potencia y vagon de ferrocarril. |
PCT/JP2010/050512 WO2011086705A1 (ja) | 2010-01-18 | 2010-01-18 | パワー半導体モジュール、電力変換装置および鉄道車両 |
CN201080061688.4A CN102714203B (zh) | 2010-01-18 | 2010-01-18 | 功率半导体模块、电力转换装置及铁路车辆 |
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JP2013236507A (ja) * | 2012-05-10 | 2013-11-21 | Fuji Electric Co Ltd | パワー半導体モジュール |
JP2015119105A (ja) * | 2013-12-19 | 2015-06-25 | パナソニックIpマネジメント株式会社 | 回路モジュール、電力制御装置及び電力制御回路の製造方法 |
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JP6384406B2 (ja) * | 2015-06-18 | 2018-09-05 | 株式会社デンソー | 半導体装置 |
JP6610406B2 (ja) * | 2016-04-19 | 2019-11-27 | 株式会社デンソー | 電力変換装置 |
JP6957383B2 (ja) * | 2018-02-21 | 2021-11-02 | 株式会社日立産機システム | 電力変換装置 |
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KR102047852B1 (ko) * | 2019-10-29 | 2019-11-22 | 현대일렉트릭앤에너지시스템(주) | 모듈형 igbt를 이용한 고속전철용 추진제어장치의 전력스택을 갖는 고속 전철용 추진 장치 |
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AU2010342148A1 (en) | 2012-07-19 |
US20120256574A1 (en) | 2012-10-11 |
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BR112012016900A2 (ja) | 2018-06-05 |
KR101387515B1 (ko) | 2014-04-21 |
JP4722229B1 (ja) | 2011-07-13 |
EP2528094A1 (en) | 2012-11-28 |
EP2528094B1 (en) | 2015-04-01 |
US9520802B2 (en) | 2016-12-13 |
CN102714203A (zh) | 2012-10-03 |
KR20120112536A (ko) | 2012-10-11 |
AU2010342148B2 (en) | 2013-05-16 |
MX2012008026A (es) | 2012-08-01 |
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