WO2011080952A1 - Substrat de support d'élément, module semi-conducteur, module de caméra et procédé de fabrication du substrat de support d'élément - Google Patents

Substrat de support d'élément, module semi-conducteur, module de caméra et procédé de fabrication du substrat de support d'élément Download PDF

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Publication number
WO2011080952A1
WO2011080952A1 PCT/JP2010/067120 JP2010067120W WO2011080952A1 WO 2011080952 A1 WO2011080952 A1 WO 2011080952A1 JP 2010067120 W JP2010067120 W JP 2010067120W WO 2011080952 A1 WO2011080952 A1 WO 2011080952A1
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WO
WIPO (PCT)
Prior art keywords
element mounting
mounting substrate
transparent member
opening
camera module
Prior art date
Application number
PCT/JP2010/067120
Other languages
English (en)
Japanese (ja)
Inventor
良輔 臼井
真弓 中里
修 田畑
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2009298267A external-priority patent/JP2013051223A/ja
Priority claimed from JP2009298260A external-priority patent/JP2013051222A/ja
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2011080952A1 publication Critical patent/WO2011080952A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Definitions

  • the present invention relates to an element mounting substrate on which chip parts and the like can be mounted, and a semiconductor module using the same. More specifically, the present invention relates to an element mounting substrate in which an opening is formed.
  • Portable electronic devices such as mobile phones, PDAs, DVCs, and DSCs are becoming smaller and lighter in order for these products to be accepted in the market as camera functions for taking pictures of people and landscapes are accelerating.
  • a highly integrated system LSI is required.
  • a camera module which is an example of a conventional portable electronics device, will be described.
  • FIG. 11 is a cross-sectional view showing the structure of a conventional camera module.
  • the conventional camera module includes an imaging device 31 that is an imaging semiconductor device, a lens barrel 33, a lens 35, an optical filter (infrared filter) 37, a circuit board 39, a reinforcing plate 41, an adhesive 43, and A sealing material 45 is provided.
  • the imaging element 31 having the imaging surface (light receiving surface) 47 on which the subject image is incident is electrically connected to the circuit board 39 via the bumps 49.
  • the lens 35 forms a subject image on the light receiving surface 47 of the image sensor 31, and a light guide space 51 is formed between the lens 35 and the image sensor 31.
  • An infrared filter 37 is provided in the light guide space 51, and the infrared filter 37 blocks infrared rays that cause deterioration of the captured image.
  • the reinforcing plate 41 is provided to compensate for the insufficient strength when the circuit board 39 has insufficient strength.
  • the reinforcing plate 41 is bonded to the circuit board 39 with an adhesive 43.
  • FIG. 12 is a cross-sectional view showing another structure of the conventional camera module.
  • an image pickup device 3 such as a CMOS is mounted on a mounting substrate 1 via an electrode portion 7.
  • the housing 2 is fixed to the mounting substrate 1, and the image sensor 3 is arranged inside the base end side of the housing 2.
  • a lens holder 8 incorporating the lens 4 is provided on the front end side of the housing 2.
  • An optical filter 11 such as an infrared cut filter is installed between the lens 4 and the image sensor 3. The optical filter 11 is held by a holding portion 13 formed on the lens holder 8.
  • optical filter 11 is curved so as to protrude toward the image sensor 3.
  • a wiring board (element mounting board or circuit board) typified by a printed circuit board as in the past, the rigidity of the wiring board is lowered and thermal stress is applied. There has been a problem that it is easily deformed. Specifically, when a chip component or the like is mounted on a wiring board having an opening using solder, the wiring board is twisted, which may cause a reduction in connection reliability of the wiring board.
  • the present invention has been made in view of these problems, and an object thereof is to provide a technique for increasing the rigidity of an element mounting substrate provided with an opening for transmitting electromagnetic waves. Another object of the present invention is to provide a technique that enables a further reduction in the height of the camera module.
  • An aspect of the present invention is an element mounting substrate.
  • the element mounting board includes a wiring board provided with an opening penetrating from one main surface to the other main surface, a transparent member fitted into the opening and capable of transmitting electromagnetic waves in a specific wavelength region, In the surface direction of the wiring board, at least a part of the outer peripheral side surface of the transparent member overlaps the side wall of the wiring board in the opening.
  • the transparent member may be an infrared cut filter.
  • the wiring board may include an insulating resin layer filled with an inorganic filler, and the transparent member may have the same thermal expansion coefficient as the inorganic filler.
  • the transparent member may be made of a glass material, and the inorganic filler may be made of a glass cloth.
  • the semiconductor module includes another element mounting board on which a semiconductor element is mounted, the element mounting board in the above-described aspect provided above the other element mounting board, and a semiconductor element.
  • An electrical connection member for electrically connecting the wiring layer provided on the element mounting substrate and the wiring layer provided on the element mounting substrate of the above-described aspect is provided.
  • Still another aspect of the present invention is a semiconductor module.
  • the semiconductor module includes the element mounting substrate according to the aspect described above and a semiconductor element mounted on the other main surface of the element mounting substrate.
  • Still another aspect of the present invention is a camera module.
  • the camera module is provided with a first element mounting substrate on which a semiconductor element is mounted, and an opening penetrating from one main surface to the other main surface, provided above the first element mounting substrate.
  • the second element mounting board, the wiring layer provided around the semiconductor element and provided on the second element mounting board, and the wiring layer provided on the first element mounting board are electrically connected.
  • a second element mounting board comprising: an electrical connection member that is electrically connected; a lens provided above the opening; and a transparent member that is fitted into the opening and is capable of transmitting electromagnetic waves in a specific wavelength region. In the surface direction, at least part of the outer peripheral side surface of the transparent member and the inner wall of the second element mounting substrate in the opening portion overlap each other.
  • the second element mounting substrate may include an insulating resin layer filled with an inorganic filler, and the transparent member may have the same thermal expansion coefficient as that of the inorganic filler.
  • Still another aspect of the present invention is a method for manufacturing an element mounting substrate.
  • the element mounting substrate manufacturing method includes a step of forming an opening in a predetermined region of the wiring substrate, and a wiring substrate provided with the opening is placed on a base having a recess in the region corresponding to the opening. And a step of fitting the transparent member into the opening and supporting the transparent member by the recess, and a step of bonding the transparent member and the inner wall of the wiring board of the opening.
  • the step of forming the opening includes a step of forming a through hole in a region corresponding to a corner of the transparent member, and a step of cutting the wiring substrate so as to connect the through hole. And when the transparent member is fitted into the opening, the corners of the transparent member may be located in the through-hole formation region.
  • the present invention it is possible to increase the rigidity of the element mounting substrate provided with an opening for transmitting electromagnetic waves. Further, according to the present invention, the camera module can be further reduced in height.
  • FIG. 2 is a schematic cross-sectional view showing the structure of a camera module according to Embodiment 1.
  • FIG. FIG. 5 is a schematic cross-sectional view showing the structure of a camera module according to Embodiment 2.
  • 6 is a schematic cross-sectional view showing the structure of a camera module according to Embodiment 3.
  • FIG. It is process drawing which shows the preparation methods of the element mounting substrate. It is process drawing which shows the preparation methods of the element mounting substrate. It is process drawing which shows the preparation methods of the element mounting substrate. It is process drawing which shows the preparation methods of the element mounting substrate. It is process drawing which shows the preparation methods of the element mounting substrate.
  • 6 is a schematic cross-sectional view showing a structure of a camera module according to Embodiment 4.
  • FIG. 10 is a partial cross-sectional view of the mobile phone shown in FIG. 9. It is sectional drawing which shows the structure of the conventional camera module. It is sectional drawing which shows the other structure of the conventional camera module.
  • FIG. 1 is a schematic cross-sectional view showing the structure of a camera module 10 as an example of a semiconductor module according to the first embodiment.
  • the camera module 10 according to the present embodiment is used in an imaging device such as a digital still camera, a digital video camera, or a camera mounted on a mobile phone.
  • the camera module 10 according to Embodiment 1 includes a circuit module 200.
  • the circuit module 200 has a configuration in which the chip component 220 is mounted on one surface of the element mounting substrate 210 and the semiconductor element 120 is mounted on the other surface of the element mounting substrate 210.
  • the chip component 220 is an electronic component for driving a lens 290 described later, and examples thereof include a drive IC, a power supply IC, and passive components such as a resistor and a capacitor.
  • the semiconductor element 120 is a light receiving element such as a CMOS image sensor. Photodiodes are formed in a matrix on the surface of the semiconductor element 120. Each photodiode photoelectrically converts light into a charge amount according to the amount of received light and outputs it as a pixel signal.
  • the element mounting substrate 210 includes an insulating resin layer 230 serving as a base material, a wiring layer 240 formed on one main surface (in this embodiment, a semiconductor element mounting surface) of the insulating resin layer 230, and an insulating resin layer. 230, electrode portion 242 formed on the other main surface, insulating resin layer 250 formed on one main surface of insulating resin layer 230, and insulating resin layer formed on the other main surface of insulating resin layer 230. 252.
  • the insulating resin layer 230 can be formed of, for example, a thermosetting resin such as a melamine derivative such as BT resin, a liquid crystal polymer, an epoxy resin, a PPE resin, a polyimide resin, a fluororesin, a phenol resin, or a polyamide bismaleimide.
  • a glass cloth 232 that is a kind of inorganic filler is embedded in the insulating resin layer 230 as a reinforcing material.
  • the thickness of the insulating resin layer 230 is, for example, 240 ⁇ m.
  • a wiring layer 240 having a predetermined pattern is provided on one main surface of the insulating resin layer 230.
  • a gold plating layer such as a Ni / Au layer may be formed on the wiring layer 240.
  • the chip component 220 is electrically connected by solder 221 at a predetermined portion of the wiring layer 240.
  • an electrode portion 242 is provided on the other main surface of the insulating resin layer 230.
  • a gold plating layer such as a Ni / Au layer may be formed on the electrode portion 242.
  • An example of a material constituting the wiring layer 240 and the electrode portion 242 is copper.
  • the wiring layer 240 and the electrode part 242 are electrically connected by a via conductor (not shown) penetrating the insulating resin layer 230 at a predetermined position of the insulating resin layer 230.
  • a via conductor not shown
  • the other main surface of the insulating resin layer 230 is provided with a wiring layer that is the same layer as the electrode portion 242 and has the same height.
  • An insulating resin layer 250 made of a photo solder resist or the like is provided on one main surface of the insulating resin layer 230.
  • an insulating resin layer 252 made of a photo solder resist or the like is provided on the other main surface of the insulating resin layer 230.
  • the thickness of the insulating resin layer 250 and the insulating resin layer 252 is, for example, 30 ⁇ m.
  • the insulating resin layer 252 is provided with an opening for mounting the solder 272 on the electrode portion 242.
  • the electrode portion 242 and the element electrode 121 provided on the semiconductor element 120 are electrically connected by the solder 272.
  • the element mounting substrate 210 is provided with a lens barrel 280, and the cylindrical main body 282 and the lens barrel 280 are coupled by screwing of a screw portion provided on the inner peripheral surface of the lens barrel 280.
  • the lens 290 is attached to the cylindrical main body 282.
  • an opening 300 penetrating the element mounting substrate 210 is provided corresponding to the installation area of the semiconductor element 120.
  • a transparent member 310 is fitted into the opening 300.
  • the outer peripheral side surface of the transparent member 310 is fixed to the inner wall of the element mounting substrate 210 exposed in the opening 300 with an adhesive 320.
  • the thickness of the transparent member 310 is, for example, 300 ⁇ m.
  • the transparent member 310 is made of a material that can transmit electromagnetic waves in a specific wavelength region, and specifically, is an IR cut filter. By using the transparent member 310 as an IR cut filter, excessively long wavelength infrared rays flowing into the semiconductor element 120 are blocked.
  • the transparent member 310 includes an ultraviolet cut filter, a color filter, a polarizing plate, a combustion gas transmission filter, a flame temperature measurement filter, a plastic temperature measurement filter, a quartz glass transmission filter, and a glass temperature measurement filter. Etc.
  • the main surface on the lens 290 side of the transparent member 310 is flush with the main surface on the lens 290 side of the insulating resin layer 250, but the main surface on the lens 290 side of the transparent member 310 and the insulating resin layer.
  • the main surface on the lens 290 side of 250 may form a step.
  • the wiring substrate is the element mounting substrate 210 including the insulating resin layer 230, the insulating resin layer 250, and the insulating resin layer 252.
  • the thermal expansion coefficient of the transparent member 310 is equal to the thermal expansion coefficient of the inorganic filler embedded in the insulating resin layer 230, that is, the glass cloth 232 in the present embodiment.
  • a commonly used glass cloth has a thermal expansion coefficient (° C. ⁇ 1 ) of 5.5 ⁇ 10 ⁇ 6 .
  • the thermal expansion coefficient (° C. ⁇ 1 ) of the transparent member 310 is preferably 5.5 ⁇ 10 ⁇ 6 .
  • the thermal expansion coefficients (° C. ⁇ 1 ) of quartz glass, borosilicate glass, and soda quartz glass are 5.6 ⁇ 10 ⁇ 7 , 5.2 ⁇ 10 ⁇ 6 , and 8.5 ⁇ 10 ⁇ 6 , respectively.
  • the range of the thermal expansion coefficient (° C. ⁇ 1 ) of the transparent member 310 can be in the range of 5 ⁇ 10 ⁇ 7 to 9 ⁇ 10 ⁇ 6 .
  • the thermal expansion coefficient (° C. ⁇ 1 ) of the epoxy resin is approximately 6 ⁇ 10 ⁇ 5, which is outside the range of the thermal expansion coefficient of the transparent member 310.
  • the camera module 10 as an example of the semiconductor module described above, at least the following effects can be obtained.
  • the following items are listed as effects obtained by the camera module 10 of the present embodiment.
  • the transparent member 310 having the same thermal expansion coefficient as the inorganic filler embedded in the insulating resin layer 230 into the opening 300 provided in the element mounting substrate 210 the entire element mounting substrate 210 is Thermal responsiveness can be made uniform. Thereby, when the chip component 220 and the semiconductor element 120 are surface-mounted, when the element mounting substrate 210 is heated, it is possible to prevent the element mounting substrate 210 from being twisted.
  • the transparent member 310 By fitting the transparent member 310 into the opening 300 provided in the element mounting substrate 210, as shown in FIG.
  • the height of the lens 290 can be further reduced, and as a result, the height of the camera module 10 can be reduced.
  • a fillet made of an adhesive for fixing the transparent member 310 is formed and spreads to the side of the transparent member 310.
  • the chip component mounting area is restricted.
  • the adhesive 320 for fixing the transparent member 310 stays in the opening 300 by fitting the transparent member 310 into the opening 300 provided in the element mounting substrate 210, the chip component 220 is installed. It is possible to improve the degree of design freedom regarding the area.
  • the inner wall of the element mounting substrate 210 exposed to the opening 300 is covered with the adhesive 320, it is not necessary to separately provide an end face protective resin for suppressing dust generation.
  • FIG. 2 is a schematic cross-sectional view showing the structure of the camera module 10 as an example of the semiconductor module according to the second embodiment.
  • the camera module 10 according to the present embodiment is used in an imaging device such as a digital still camera, a digital video camera, or a camera mounted on a mobile phone.
  • the camera module 10 according to the second embodiment includes a circuit module (first circuit module) 100 and a circuit module (second circuit module) 200 mounted on the circuit module 100.
  • the semiconductor element 120 is mounted on the back side of the element mounting substrate 210 and is provided in the circuit module 200.
  • the semiconductor element 120 is mounted on the circuit module 100. Is provided.
  • the element mounting substrate 210 constituting the circuit module 200, the lens barrel 280, the lens 290 and the like mounted thereon are the same as those in the first embodiment, and the description thereof is omitted.
  • the circuit module 100 includes an element mounting substrate (first element mounting substrate) 110 and a semiconductor element 120 mounted on the element mounting substrate 110 as main components.
  • the element mounting substrate 110 includes an insulating resin layer 130 and a glass cloth 132.
  • the glass cloth 132 may be woven into a plurality of layers in the insulating resin layer 130.
  • the insulating resin layer 130 can be formed of a thermosetting resin such as a melamine derivative such as BT resin, a liquid crystal polymer, an epoxy resin, a PPE resin, a polyimide resin, a fluororesin, a phenol resin, or a polyamide bismaleimide.
  • a thermosetting resin such as a melamine derivative such as BT resin, a liquid crystal polymer, an epoxy resin, a PPE resin, a polyimide resin, a fluororesin, a phenol resin, or a polyamide bismaleimide.
  • the rigidity of the element mounting substrate 110 is enhanced by the glass cloth 132 embedded in the insulating resin layer 130.
  • a wiring layer 140 having a predetermined pattern is provided on one main surface of the insulating resin layer 130 (in this embodiment, a circuit element mounting surface). Further, on one main surface of the insulating resin layer 130, an electrode portion 160 for joining solder for mounting a circuit module is provided. The electrode unit 160 will be described later.
  • An example of the material constituting the wiring layer 140 is copper.
  • the thickness of the wiring layer 140 is 20 ⁇ m, for example.
  • An insulating resin layer 150 is provided on one main surface of the insulating resin layer 130.
  • the insulating resin layer 150 covers the periphery of the electrode part 160 and the upper surface peripheral part of the conductor part 162 constituting the electrode part 160.
  • the insulating resin layer 150 is provided with an opening that exposes the central region of the electrode portion 160.
  • the insulating resin layer 150 is formed by, for example, a photo solder resist.
  • the thickness of the insulating resin layer 150 is, for example, 80 to 100 ⁇ m.
  • the insulating resin layer 150 is provided in a bank shape along the periphery of the insulating resin layer 130 as well as around the electrode portion 160. That is, a region surrounded by the insulating resin layer 150 is a recess (cavity).
  • the electrode part 160 includes a conductor part 162 and a conductor part 164.
  • the conductor portion 162 is the same layer as the wiring layer 140 and is formed on one main surface of the insulating resin layer 130. Furthermore, the conductor part 162 has a thickness (for example, 20 ⁇ m) equivalent to the wiring layer 140. The diameter of the conductor portion 162 is, for example, 350 ⁇ m.
  • the conductor portion 164 is filled in a space formed by the upper surface of the conductor portion 162 and the side wall of the insulating resin layer 150. That is, the upper surface of the conductor portion 164 is located in the opening provided in the insulating resin layer 150.
  • the thickness of the conductor part 164 is, for example, 40 ⁇ m.
  • a gold plating layer such as a Ni / Au layer may be formed on the upper surface of the conductor portion 164. Oxidation of the conductor part 164 is suppressed by the gold plating layer.
  • the thickness of the Ni layer provided on the conductor portion 164 side is, for example, 1 to 15 ⁇ m, and the thickness of the Au layer provided on the Ni layer is For example, it is 0.03 to 1 ⁇ m.
  • the semiconductor element 120 is mounted on the element mounting substrate 110 described above. Specifically, the semiconductor element 120 is mounted in a cavity surrounded by the insulating resin layer 150. A device electrode 121 provided on the semiconductor device 120 and a wiring layer 140 in a predetermined region are connected by wire bonding with a gold wire 122. Further, a gold plating layer such as a Ni / Au layer may be formed on the upper surface of the wiring layer 140 to which wire bonding is connected.
  • the following effects can be obtained in addition to the effects (1) to (5) obtained by the camera module 10 of the first embodiment.
  • (6) After stacking the upper printed circuit board provided with the opening on the lower printed circuit board, when installing the transparent member so as to close the opening of the upper printed circuit board, until the transparent member is installed In the meantime, dust may fall on a semiconductor element such as a CMOS image sensor on the lower printed circuit board.
  • the opening 300 is closed by the transparent member 310 before the element mounting substrate 210 is mounted on the element mounting substrate 110, the element mounting substrate 210 is By mounting on the element mounting substrate 110, it is possible to suppress dust from falling on the semiconductor element 120.
  • FIG. 3 is a schematic cross-sectional view showing the structure of the camera module 10 as an example of the semiconductor module according to the third embodiment.
  • the camera module 10 of the present embodiment is the same as that of the second embodiment except for the configuration of the lens 290 and the transparent member 310.
  • the lens 290 is an asymmetric plano-convex lens, and the transparent member 310 side is convex.
  • the thickness of the transparent member 310 is the same as the thickness of the element mounting substrate 210, and the transparent member 310 is transparent to the main surface of the element mounting substrate 210 on the lens 290 side (in this embodiment, the surface of the insulating resin layer 250).
  • the lens 310 has a concave surface on the lens 290 side. For this reason, in addition to the effects described in the second embodiment, the distance between the convex surface of the lens 290 and the surface of the transparent member 310 on the lens 290 side can be secured, and the camera module 10 can be further reduced in height. Can be planned.
  • (Method for manufacturing element mounting substrate) 4A, 4B, and 5 to 7 are process diagrams illustrating a method for manufacturing the element mounting substrate 210.
  • FIG. 6 and 7, FIGS. 6 (i) and 7 (i) are plan views of the element mounting substrate 210, and cross-sectional views corresponding to the respective AA ′ lines are shown in FIG. 6 (ii).
  • FIG. 7 (ii) shows.
  • an element mounting substrate 210 is prepared. 4 to 7, the element mounting substrate 210 is illustrated in a simplified manner, and the wiring layer 240 and the like are omitted as appropriate.
  • a through-hole (removal hole) 312 is drilled into a predetermined region of the element mounting substrate 210 (a region corresponding to a corner of the transparent member 310 to be assembled in a later step). Form. More specifically, the through hole 312 is formed so that the corners of the transparent member 310 are located in the region of the through hole 312.
  • the element mounting substrate 210 is cut along cutting lines 314 such that the four corners become the through holes 312, thereby forming the openings 300.
  • the shape of the four corners is rounded as indicated by the dotted line 316, so that the effective area in the opening 300 is reduced.
  • the through holes 312 in the four corners of the opening 300 in advance, there are no obstacles at the four corners of the opening 300, so that the inside of the opening 300 can be used more widely. That is, a transparent member having a larger area can be fitted into the opening 300.
  • the transparent member 310 is placed in the opening 300. Insert and temporarily place.
  • the region 410 in the center portion of the pedestal 400 is lower than the reference plane 420 of the pedestal 400 by a depth H. For this reason, when the transparent member 310 is fitted into the opening 300, the lower surface of the transparent member 310 protrudes downward by a depth H from the lower surface of the element mounting substrate 210.
  • the upper surface of the transparent member 310 is made higher than the upper surface of the element mounting substrate 210 by using the pedestal 400 in which the central region 410 is lowered. It can be held in a state of being lowered by the depth H.
  • a recess 430 that is lower than the region 410 is provided around the region 410 in the center portion of the base 400.
  • the thickness of the transparent member 310 is equal to the thickness of the element mounting substrate 210 and is transparent to the main surface of the element mounting substrate 210 on the semiconductor element 120 side.
  • the surface of the member 310 on the semiconductor element 120 side is convex, but is not limited thereto.
  • the transparent member 310 may be thinner than the element mounting substrate 210, and the surface of the transparent member 310 on the semiconductor element 120 side may be recessed with respect to the surface of the element mounting substrate 210 on the semiconductor element 120 side. In this case, using the pedestal 400 in which the central area 410 is higher than the reference plane 420, the transparent member 310 is placed in the opening 300 with the element mounting substrate 210 placed on the pedestal 400. Insert and temporarily place.
  • FIG. 8 is a schematic cross-sectional view showing a structure of a camera module 10 as an example of a semiconductor module according to the fourth embodiment.
  • the camera module 10 of the present embodiment is the same as that of the third embodiment except for the thickness of the transparent member 310.
  • the transparent member 310 is thinner than the element mounting substrate 210.
  • the surface on the lens 290 side of the transparent member 310 is recessed with respect to the main surface on the lens 290 side of the element mounting substrate 210 (in this embodiment, the surface of the insulating resin layer 250).
  • the main surface of the element mounting substrate 210 on the semiconductor element 120 side and the surface of the transparent member 310 on the semiconductor element 120 side are flush with each other.
  • the difference between the thickness of the element mounting substrate 210 and the thickness of the transparent member 310 corresponds to a step between the main surface of the element mounting substrate 210 on the lens 290 side and the surface of the transparent member 310 on the lens 290 side. Therefore, as in the third embodiment, the distance between the convex surface of the lens 290 and the surface of the transparent member 310 on the lens 290 side can be secured, and the camera module 10 can be further reduced in height. . Further, since the main surface of the element mounting substrate 210 on the semiconductor element 120 side and the surface of the transparent member 310 on the semiconductor element 120 side are flush with each other, the height of the solder ball 270 is reduced to reduce the transparency of the transparent member 310 and the semiconductor. The distance from the element 120 can be reduced, and as a result, the camera module 10 can be further reduced in height.
  • a portable device including the camera module of one embodiment of the present invention is described.
  • the example mounted in a mobile telephone as a portable apparatus is shown, for example, it may be an electronic apparatus such as a personal digital assistant (PDA), a digital video camera (DVC), a music player, and a digital still camera (DSC). Good.
  • PDA personal digital assistant
  • DVC digital video camera
  • DSC digital still camera
  • FIG. 9 is a diagram illustrating an external configuration of a mobile phone including the camera module 10 according to the embodiment.
  • a structure in which the camera module of the present application is mounted will be described later.
  • a cellular phone 1111 has a structure in which a first housing 1112 and a second housing 1114 are connected by a movable portion 1120. The first housing 1112 and the second housing 1114 can be rotated around the movable portion 1120.
  • the first housing 1112 is provided with a display portion 1118 and a speaker portion 1124 for displaying information such as characters and images.
  • the second housing 1114 is provided with an operation portion 1122 such as operation buttons and a microphone portion 1126.
  • One of the camera modules according to each embodiment of the present invention is mounted inside such a mobile phone 1111.
  • FIG. 10 is a partial cross-sectional view of the mobile phone shown in FIG. 9 (a cross-sectional view of the first housing 1112 and the second housing 1114).
  • the semiconductor module 1200 is mounted on the printed board 1128a via the solder balls 1210, and is electrically connected to the display unit 1118 and the like via the printed board 1128a.
  • the semiconductor module 1200 includes, for example, a power supply circuit for driving each circuit, an RF generation circuit for generating RF, a DAC, an encoder circuit, and a drive circuit for a backlight as a light source of a liquid crystal panel employed in a display unit of a mobile phone It functions as an input / output circuit for image data acquired by the camera module 10 to be described later.
  • the camera module 10 is mounted on a printed circuit board 1128b provided in the second housing 1114.
  • the second housing 1114 is provided with a window portion 1115 that transmits light, and a lens provided in the camera module 10 is provided to face the window portion 1115.
  • This camera module 10 enables photographing with a mobile phone.
  • the photographed data is stored in a memory (not shown) by the processing of the semiconductor module 1200.
  • the portable device including the semiconductor module according to the embodiment of the present invention, the following effects can be obtained.
  • the strength or rigidity of the element mounting substrate 210 as shown in FIG. 1 is increased, so that the operation reliability of a portable device equipped with such a camera module 10 is increased. be able to.
  • the camera module 10 shown in the above embodiment is further reduced in height, it is possible to reduce the thickness of a portable device equipped with such a camera module 10.
  • the insulating resin layer 130 may be multilayered, and the wiring layer may be multilayered in accordance with the multilayering of the insulating resin layer 130.
  • the insulating resin layer 230 may be multilayered, and the wiring layer may be multilayered according to the multilayering of the insulating resin layer 230.
  • the present invention can be used for an element mounting board on which chip parts and the like can be mounted and a semiconductor module using the same.

Abstract

La présente invention se rapporte à un substrat de support d'élément (210) sur lequel sont montées des parties de puce (220). Ledit substrat de support d'élément est pourvu d'une ouverture (300) correspondant à une zone permettant d'installer un élément semi-conducteur (120). Un élément transparent (310) est fixé dans l'ouverture (300) et une surface latérale au niveau de la périphérie externe de l'élément transparent (310) est fixée, au moyen d'un adhésif (320), à une paroi interne du substrat de support d'élément (210) pour être exposée à l'ouverture (300). En outre, un second substrat de support d'élément (210) équipé d'une lentille (290) et de parties de puce (220) est stratifié sur un premier substrat de support d'élément (110) équipé d'un élément semi-conducteur (120) au moyen d'une bille de soudure (270). Le second substrat de support d'élément (210) est pourvu d'une ouverture (300) correspondant à une zone permettant d'installer l'élément semi-conducteur (120). Un élément transparent (310) est fixé dans l'ouverture (300) et la périphérie externe de l'élément transparent (310) est fixée, au moyen d'un adhésif (320), à une paroi interne du second substrat de support d'élément (210) pour être exposée à l'ouverture (300).
PCT/JP2010/067120 2009-12-28 2010-09-30 Substrat de support d'élément, module semi-conducteur, module de caméra et procédé de fabrication du substrat de support d'élément WO2011080952A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009-298267 2009-12-28
JP2009-298260 2009-12-28
JP2009298267A JP2013051223A (ja) 2009-12-28 2009-12-28 カメラモジュールおよび素子搭載用基板の製造方法
JP2009298260A JP2013051222A (ja) 2009-12-28 2009-12-28 素子搭載用基板および半導体モジュール

Publications (1)

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WO2011080952A1 true WO2011080952A1 (fr) 2011-07-07

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EP2747411A1 (fr) * 2011-08-19 2014-06-25 FUJIFILM Corporation Module d'élément d'imagerie et son procédé de fabrication
CN104038681A (zh) * 2013-03-05 2014-09-10 太阳诱电株式会社 摄像机组件
JP2014191146A (ja) * 2013-03-27 2014-10-06 Panasonic Corp 撮像装置
JPWO2013081156A1 (ja) * 2011-11-30 2015-04-27 京セラ株式会社 撮像素子収納用パッケージおよび撮像装置
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EP2747411A1 (fr) * 2011-08-19 2014-06-25 FUJIFILM Corporation Module d'élément d'imagerie et son procédé de fabrication
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JPWO2013081156A1 (ja) * 2011-11-30 2015-04-27 京セラ株式会社 撮像素子収納用パッケージおよび撮像装置
CN104038681A (zh) * 2013-03-05 2014-09-10 太阳诱电株式会社 摄像机组件
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US11451651B2 (en) * 2018-06-13 2022-09-20 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Display assembly of electronic device and electronic device

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