WO2011071011A1 - 赤外線式炎検知器 - Google Patents

赤外線式炎検知器 Download PDF

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Publication number
WO2011071011A1
WO2011071011A1 PCT/JP2010/071813 JP2010071813W WO2011071011A1 WO 2011071011 A1 WO2011071011 A1 WO 2011071011A1 JP 2010071813 W JP2010071813 W JP 2010071813W WO 2011071011 A1 WO2011071011 A1 WO 2011071011A1
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Prior art keywords
infrared
filter
wavelength
film
multilayer film
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PCT/JP2010/071813
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English (en)
French (fr)
Japanese (ja)
Inventor
尚之 西川
祥文 渡部
雄一 稲葉
孝彦 平井
Original Assignee
パナソニック電工株式会社
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Application filed by パナソニック電工株式会社 filed Critical パナソニック電工株式会社
Priority to EP10835931A priority Critical patent/EP2511679A1/en
Priority to KR1020127016801A priority patent/KR101372989B1/ko
Priority to US13/514,631 priority patent/US20120298867A1/en
Priority to JP2011545201A priority patent/JP5838347B2/ja
Priority to CN2010800559006A priority patent/CN102713540A/zh
Publication of WO2011071011A1 publication Critical patent/WO2011071011A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0014—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation from gases, flames
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0014—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation from gases, flames
    • G01J5/0018—Flames, plasma or welding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • G01J5/602—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature using selective, monochromatic or bandpass filtering
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/12—Actuation by presence of radiation or particles, e.g. of infrared radiation or of ions
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/12—Actuation by presence of radiation or particles, e.g. of infrared radiation or of ions
    • G08B17/125—Actuation by presence of radiation or particles, e.g. of infrared radiation or of ions by using a video camera to detect fire or smoke
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering

Definitions

  • the present invention relates to an infrared flame detector.
  • infrared rays having a specific wavelength (4.3 ⁇ m to 4.4 ⁇ m) generated by resonance emission (also called CO 2 resonance emission) of carbon dioxide gas (CO 2 gas) in a flame during a fire are detected.
  • Infrared flame detectors that perform flame detection have been researched and developed in various places (for example, Japanese Laid-Open Patent Publication No. 3-78899: Patent Document 1).
  • the infrared rays generated by the CO 2 resonance radiation are greatly different from the relative intensity spectrum distribution of infrared rays emitted from sunlight, a high-temperature object, or a low-temperature object, and the amount of infrared rays emitted.
  • the frequency fluctuates constantly and the fluctuating frequency is concentrated between 1 and 15 Hz (for example, “Air Conditioning / Hygiene Engineering Society,“ 2. Infrared 3-wavelength flame detector ”, [online], [ Search on March 21, 2009], Internet ⁇ URL: http://www.shasej.org/gakkaishi/0109/0109-koza-02.html>: Non-Patent Document 1).
  • the said nonpatent literature 1 is disclosing the infrared 3 wavelength type flame detector of the structure shown in FIG.
  • This infrared three-wavelength flame detector has three optical filters (infrared optical filters) that selectively transmit infrared rays in three wavelength bands (4.0 ⁇ m, 4.4 ⁇ m, and 5.0 ⁇ m) of the CO 2 resonance radiation band. 220 1 , 220 2 , 220 3, and three infrared sensors 240 1 , 240 2 , 240 3 that individually receive infrared rays transmitted through the optical filters 220 1 , 220 2 , 220 3, respectively.
  • optical filters infrared optical filters
  • this infrared three-wavelength flame detector has an electrical bandpass filter that passes only a flicker frequency component of 1 to 10 Hz out of the output of each infrared sensor 240 1 , 240 2 , 240 3. 3 are provided with three signal amplifying units 250 1 , 250 2 , 250 3 for selectively amplifying only the signal. Further, this infrared three-wavelength flame detector calculates the magnitude of the signal values output from each of the signal amplifiers 250 1 , 250 2 , 250 3 , the ratio between the signal values, and the like using a unique algorithm, and radiates from the flame.
  • Non-Patent Document 1 describes that this infrared three-wavelength flame detector has a very high flame-selection performance and does not respond to natural light or artificial lighting such as a fluorescent lamp, a sodium lamp, or a mercury lamp. Yes.
  • the infrared three-wavelength flame detector disclosed in Non-Patent Document 1 includes each optical filter 220 1 , 220 2 , 220 3 and each infrared sensor 240 1 , 240 2 , 240 3 as individual components. Yes. For this reason, this infrared three-wavelength flame detector is equipped with an optical filter 220 1 , 220 2 , 220 3 and a housing (not shown) in which the infrared sensors 240 1 , 240 2 , 240 3 are stored. Is considerably larger than the can package of the infrared flame detector described in Patent Document 1.
  • the infrared flame detector disclosed in Patent Document 1 has a disk shape in which four infrared detection elements 40 1 , 40 2 , 40 3 , and 40 4 are arranged.
  • Each of the infrared detection elements 40 1 , 40 2 , 40 is disposed so as to close the insulating substrate 171, the metal cap 172 coupled to the insulating substrate 171, and the light transmitting window 7 a formed on the front wall of the cap 172.
  • 3 and 40 4 are provided with infrared optical filters 20 ′ having band-pass filter sections 202 1 , 202 2 , 202 3 , and 202 4 having different transmission wavelength bands.
  • the insulating substrate 171 and the cap 172 constitute a can package.
  • one of the four band-pass filter sections 202 1 , 202 2 , 202 3 , 202 4 transmits 4.3 ⁇ m infrared light.
  • the transmission wavelength band is set.
  • the infrared optical filter 20 ′ is selected by dividing a multilayer film designed according to the transmission characteristics of each of the bandpass filter sections 202 1 , 202 2 , 202 3 , 202 4 into four times on one glass substrate. It is formed by vapor deposition or by bonding four fan-shaped band-pass filter sections 202 1 , 202 2 , 202 3 , 202 4 together.
  • two infrared optical filter 20 1, 20 2, and two infrared light-receiving elements 40 1, 40 2 both the infrared optical filter 20 1, a 20 2 and both the infrared light-receiving element 40 1, 40 2 package 7 in which the housing, as the wavelength of the two infrared optical filter 20 1, 20 2 of the transmission wavelength range of the reference infrared absorption wavelength of the detection target gas light
  • the housing as the wavelength of the two infrared optical filter 20 1, 20 2 of the transmission wavelength range of the reference infrared absorption wavelength of the detection target gas light
  • the package 7 includes a metal stem 71 and the metal cap 72 can package have been used consists of, 2 TsunoToru each infrared optical filter 20 1, 20 2, which is provided in the cap 72 It is mounted on the cap 72 so as to close each of the optical windows.
  • the two infrared optical filter 20 1 having different transmission wavelength range, 20 2 is composed of discrete components, the number of components is increased, two infrared optical filter 20 1, 20 2 steps are required to individually to implement each package 7, there is a problem that cost is increased. Further, in the package 7, an adhesive portion is required for each of the infrared optical filters 20 1 and 20 2 , and it is difficult to reduce the size of the package 7.
  • FIG. 27 As an infrared light receiving module housed and used in a package of an infrared gas detector, two infrared light receiving elements 400 1 , 400 2 are formed on one surface side of a substrate 300 made of an MgO substrate. There is formed, the infrared light receiving element 400 1, 400 2 different narrow band pass filter unit 200 1 transmission wavelength from each other, respectively, 200 2 has been proposed that laminated (Japanese Unexamined Patent Publication Hei 7-72078 Publication: Patent Document 2). Wherein each infrared receiving elements 400 1, 400 2 and the narrow band pass filter unit 200 1, 200 2 are formed by using a sputtering method.
  • a combination of a plurality of types of thin film materials constituting each multilayer film to be the narrow band transmission filter portions 200 1 and 200 2 Si, Ge, Se, Te, LiF, NaF, CaF 2 , MgF 2 are used. A combination of materials selected from a group is employed.
  • the lower electrodes 401 1 , 401 2 of the two infrared light receiving elements 400 1 , 400 2 are continuously formed and electrically connected.
  • FIGS. 28A and 28B Japanese Patent Laid-Open Publication No. 3-205521: Patent Document 3
  • each infrared optical filter 20 1, 20 2, 20 3 , 20 4 , a plurality of infrared light receiving elements 40 1 , 40 2 , 40 3 , 40 4 for receiving the infrared rays transmitted through each of them are housed in the package 7.
  • the package 7 is a CAN package including a metal stem 71 and a metal cap 72. Further, in this infrared type gas detector, the transparent window 7a provided on the front wall of the cap 72 is closed by an infrared transmitting member 80 made of a sapphire substrate, and N 2 or dry air is enclosed in the package 7. ing.
  • each of the infrared optical filters 20 1 , 20 2 , 20 3 , and 20 4 disclosed in Patent Document 3 has a predetermined infrared ray on one surface side of the filter forming substrate 1 made of an Si substrate.
  • a broadband cutoff filter portion 3 ′ that cuts the short wavelength band and the long wavelength band of infrared rays is formed.
  • each of the narrow-band transmission filter portion 2 ′ and the broadband cutoff filter portion 3 ′ is formed of a multilayer film made of Ge and SiO.
  • the center wavelength of the narrow band filter part that selectively transmits 4.3 ⁇ m infrared light generated by the resonance emission of CO 2 gas is set to 4.3 ⁇ m, and the transmission bandwidth is set to about 0.2 ⁇ m. It is necessary to be able to detect a flame as large as a lighter at a distance of 10 m or more.
  • thermopiles capable of highly sensitive measurement are often used as infrared light receiving elements.
  • a current-voltage conversion circuit using a FET and a resistor connected to the gate of the FET, or a current in which a capacitor is connected between the output terminal and the inverting input terminal of an operational amplifier
  • a voltage conversion circuit Japanese Patent Laid-Open No. 10-281866: Patent Document 4
  • the infrared gas detector having the configuration shown in FIGS. 28A and 28B disclosed in Patent Document 3 is used as an infrared flame detector.
  • a plurality of kinds of infrared optical filter 20 1 having different filter characteristics, 20 2, 20 3, 20 4 are formed on different wafers, and the individual from each of the wafer infrared optical filter 20 1, 20 2 , 20 3 , and 20 4 , the infrared optical filters 20 1 , 20 2 , 20 3 , and 20 4 having different filter characteristics need to be bonded with the adhesive 19.
  • element 40 is 1, 40 2, 40 3, 40 distance between the centers of the 4 large, infrared light-receiving element 40 1, 40 2, 40 3, 40 4 difference in optical path length of infrared rays reach is increased in the. That is, in such an infrared flame detector, detection light composed of infrared light having a first selection wavelength of 4.3 ⁇ m and reference light composed of infrared light having a second selection wavelength other than the first selection wavelength. The difference in optical path length becomes large. Further, in such an infrared flame detector, the light receiving efficiency of each of the infrared light receiving elements 40 1 , 40 2 , 40 3 , and 40 4 is lowered.
  • the infrared transmitting member 80 can block far-infrared rays of ambient light such as sunlight and illumination light that cause noise, but the number of parts increases and the number of assembly steps increases, and the sapphire substrate is expensive. Since processing such as dicing is difficult, the cost increases. Further, if the number of layers of the multilayer film in the infrared optical filters 20 1 , 20 2 , 20 3 , and 20 4 is increased, it is possible to block far-infrared rays while realizing a narrow-band bandpass filter, but the cost is reduced. It will be high.
  • conductive adhesive such as silver paste is used as the adhesive 19 in order to establish conduction between the infrared optical filters 20 1 , 20 2 , 20 3 , and 20 4.
  • the agent is used, the mechanical strength is lowered.
  • the transmission characteristics of each of the band-pass filter sections 202 1 , 202 2 , 202 3 , 202 4 are set on one glass substrate.
  • each multilayer constituting each of the band-pass filter sections 202 1 , 202 2 , 202 3 , 202 4 is formed. Since it is necessary to form the film sequentially, there is a problem that the manufacturing cost increases. Also, in the case where the infrared optical filter 20 ′ is formed by bonding four fan-shaped bandpass filter sections 202 1 , 202 2 , 202 3 , and 2024, the bandpass filter sections 202 1 , 202 having different transmission characteristics are formed. 2 , 202 3 , and 202 4 need to be formed separately and fan-shaped, and there is a problem that the manufacturing cost increases and the mechanical strength decreases.
  • the peripheral portions of one surface and the other surface of each of the infrared optical filters 20 1 , 20 2 , 20 3 , and 20 4 are exposed. Therefore, in this configuration, unnecessary infrared holds the infrared receiving element 40 1, 40 2, 40 3, 40 a plurality of so as not to enter the 4 infrared receiving component 40 1, 40 2, 40 3, 40 4
  • the holder 90 is provided with a plurality of storage portions 90 1 , 90 2 , 90 3 , and 90 4 , and each of the storage portions 90 1 , 90 2 , 90 3 , and 90 4 has an infrared light receiving element 40 1 , 40 2 , 40 3. , there is a need to accommodate the 40 4.
  • infrared optical module having the configuration shown in FIG. 27 disclosed in Patent Document 2, two infrared light receiving elements 400 1 and 400 2 are formed on one surface side of the substrate 300 made of an MgO substrate.
  • infrared light-receiving element 400 1, 400 2 different narrow band pass filter unit 200 1 transmission wavelength from each other, respectively, 200 2 are laminated. Therefore, in the infrared optical module, and it can shorten the distance between the centers of the narrow band pass filter unit 200 1, 200 2, and the infrared first selected wavelength (4.3 [mu] m), other than the first selected wavelength second
  • the difference in optical path length from infrared light (reference light) having a selected wavelength can be reduced, and the cost can be reduced.
  • the infrared light receiving elements 400 1, 400 despite the thermal infrared light receiving element such as a 2 pyroelectric infrared receiving elements 400 1, 400 2 above directly, narrow band pass filter unit 200 1, 200 2 are laminated in. For this reason, in this infrared optical module, the heat capacity becomes large and it is difficult to ensure thermal insulation, and the responsiveness and sensitivity are lowered.
  • the amplifier circuit constituted by the current-voltage conversion circuit described in Patent Document 4 it is necessary to amplify the output of each infrared light receiving element separately. Because there is a direct current bias component caused by ambient light such as light and infrared light from fluorescent lamps and heat sources, if the intensity of the infrared light incident on the infrared light receiving element is too strong, the gain of the amplifier circuit will be saturated due to saturation of the output of the amplifier circuit Is limited, the improvement of the S / N ratio is limited, and there is a possibility that a flame cannot be detected by the infrared flame detector. Similarly, in the infrared three-wavelength flame detector shown in FIG.
  • the pyroelectric element is a so-called differential detection element that absorbs infrared rays as thermal energy and detects the resulting change in the amount of charge (pyroelectric effect), so that only the change in infrared rays can be detected.
  • the impedance of each of the current-voltage conversion circuits described above is as large as 100 G ⁇ to 1 T ⁇ , and it is effective to achieve a high S / N ratio by high impedance.
  • the impedance is high, the influence of external radiation noise It is easy to receive.
  • the present invention has been made in view of the above reasons, and an object of the present invention is to provide an infrared flame detector capable of high sensitivity and low cost.
  • the infrared flame detector according to the present invention is an infrared flame detector in which an infrared light receiving element is housed in a package, and an infrared optical filter is disposed in front of the infrared light receiving element in the package.
  • the pyroelectric elements having a pair of different polarities are arranged in parallel on the pyroelectric element forming substrate and connected in reverse series or reverse parallel, and the infrared optical filter is a filter formed of an infrared transmitting material.
  • a first selected wavelength comprising a specific wavelength generated by resonance radiation of CO 2 gas caused by a flame, which is formed in a portion corresponding to each of the pyroelectric elements on one surface side of the filter forming substrate
  • a set of two narrow-band transmission filters that selectively transmit infrared rays of the second selected wavelength that are reference wavelengths other than the specific wavelength.
  • a broadband cutoff filter portion that is formed on the other surface side of the filter-forming substrate and absorbs infrared light having a wavelength longer than the infrared reflection band set by each of the narrow-band transmission filter portions.
  • the narrow-band transmission filter unit includes a first ⁇ / 4 multilayer film in which a plurality of types of thin films having different refractive indexes and equal optical thicknesses are stacked, and the filter forming substrate in the first ⁇ / 4 multilayer film Between the second ⁇ / 4 multilayer film and the second ⁇ / 4 multilayer film, which is formed on the opposite side to the side and is formed by laminating the plurality of types of thin films. And a wavelength selection layer having an optical film thickness different from the optical film thickness of each thin film according to the selected wavelength.
  • the broadband cut-off filter unit is formed of a multilayer film in which a plurality of types of thin films having different refractive indexes are laminated, and at least one type of the plurality of types of thin films absorbs far infrared rays. It is preferably formed of a far infrared ray absorbing material.
  • the filter forming substrate is preferably a Si substrate or a Ge substrate.
  • the package is made of metal and the filter forming substrate is electrically connected to the package.
  • the components of the amplification circuit for amplifying the output of the infrared light receiving element are housed in the package.
  • FIG. 1A is a schematic plan view of an infrared flame detector according to the embodiment
  • FIG. 1B is a schematic cross-sectional view of the infrared flame detector. It is a schematic exploded perspective view of an infrared flame detector same as the above.
  • FIG. 3A is a schematic plan view of an infrared light receiving element in the above infrared flame detector
  • FIG. 3B is a circuit diagram of the infrared light receiving element
  • FIG. 3C is a circuit diagram of another configuration example of the infrared detecting element.
  • FIG. 15A is a transmission spectrum of a reference example in which an Al 2 O 3 film having a thickness of 1 ⁇ m is formed on a Si substrate
  • FIG. 15B is an optical parameter of the Al 2 O 3 film calculated based on the transmission spectrum of FIG. 15A. It is explanatory drawing of (refractive index, absorption coefficient). It is a transmission spectrum figure of an infrared optical filter same as the above. It is a transmission spectrum figure of the broadband cutoff filter part of the infrared optical filter same as the above. It is a schematic block diagram of the infrared flame detection apparatus using the infrared flame detector same as the above.
  • FIG. 25A is a schematic perspective view of another conventional infrared flame detector, and FIG.
  • FIG. 25B is a schematic perspective view of a main part of the infrared flame detector. It is a schematic block diagram of the infrared type gas detector of a prior art example. It is a schematic sectional drawing of the conventional infrared rays light receiving module.
  • FIG. 28A is a schematic longitudinal sectional view of another conventional infrared gas detector
  • FIG. 28B is a schematic transverse sectional view of the infrared gas detector
  • FIG. 28C is a schematic side view of an infrared optical filter.
  • the infrared flame detector of the present embodiment includes an infrared light receiving element 40 having a plurality of (here, two) pyroelectric elements 4 1 and 4 2 and an infrared light receiving element 40.
  • a circuit block 6 provided with a signal processing circuit for signal processing of the output and a package 7 made of a can package (here, TO-5) for housing the circuit block 6 are provided.
  • the package 7 includes a metal stem 71 on which the circuit block 6 is mounted via a spacer 9 made of an insulating material, and a metal cap 72 fixed to the stem 71 so as to cover the circuit block 6.
  • a plurality (three in this case) of terminal pins 75 that are electrically connected to appropriate portions of the block 6 are provided so as to penetrate the stem 71.
  • the stem 71 is formed in a disc shape
  • the cap 72 is formed in a bottomed cylindrical shape with the rear surface open, and the rear surface is closed by the stem 71.
  • the spacer 9, the circuit block 6 and the stem 71 are fixed with an adhesive.
  • a rectangular (in this embodiment, a square) window portion 7a is formed on the front wall of the above-described cap 72 that constitutes a part of the package 7 and positioned in front of the infrared light receiving element 40.
  • the infrared optical filter 20 is disposed from the inside of the cap 72 so as to cover the window portion 7a.
  • the stem 71 is sealed in such a manner that a plurality of terminal holes 71b through which the respective terminal pins 75 are inserted are penetrated in the thickness direction, and each terminal pin 75 is inserted into the terminal hole 71b. Sealed by the portion 74.
  • the cap 72 and the stem 71 described above are formed of a steel plate, and an outer flange portion 72c extending outward from the rear end edge of the cap 72 with respect to the flange portion 71c formed on the peripheral portion of the stem 71 is provided. Sealed by welding.
  • the circuit block 6 is a first circuit composed of a printed wiring board (for example, a composite copper-clad laminate) on which ICs 63 and chip-like electronic components 64 that are components of the signal processing circuit are mounted on different surfaces.
  • a shield plate 66 formed with a layer (hereinafter referred to as a shield layer) and laminated on the resin layer 65, and a printed wiring board (for example, composite copper-clad laminate) on which the infrared light receiving element 40 is mounted and laminated on the shield plate 66 And a second circuit board 67 made of a plate.
  • the shield layer may be formed only with a copper foil or a metal plate.
  • an IC 63 is flip-chip mounted on the lower surface side in FIG. 2, and a plurality of electronic components 64 are mounted on the upper surface side in FIG. 2 by solder reflow.
  • a pair of pyroelectric elements 4 1 and 4 2 having different polarities are arranged in parallel on a pyroelectric element forming substrate 41 made of a pyroelectric material (for example, lithium tantalate). And it is a dual element connected in reverse series so that the differential output of two pyroelectric elements 4 1 and 4 2 can be obtained (see FIG. 3B).
  • the IC 63 is integrated with an amplifier circuit (bandpass amplifier) that amplifies the output of the infrared light receiving element 40 in a predetermined frequency band (for example, about 1 to 10 Hz), a window comparator at the subsequent stage of the amplifier circuit, and the like.
  • the infrared light receiving element 40 may be any element that can obtain the differential output of the pair of pyroelectric elements 4 1 and 4 2 , and the pair of pyroelectric elements 4 1 and 4 2 are reversely connected in series. For example, as shown in FIG. 3C, it may be connected in antiparallel.
  • the second circuit board 67 is provided with a thermal insulation hole 67a that thermally insulates the pyroelectric elements 4 1 and 4 2 of the infrared light receiving element 40 from the second circuit board 67 in the thickness direction. Therefore, a gap is formed between the pyroelectric elements 4 1 and 4 2 of the infrared light receiving element 40 and the shield plate 66, and sensitivity is increased.
  • the pyroelectric elements 4 1 and 4 2 of the infrared light receiving element 40 and the second circuit board 67 are provided on the second circuit board 67.
  • a support portion that supports the infrared light receiving element 40 may be provided so as to form a gap between the two.
  • the circuit block 6 has through holes 62b, 65b, 66b, 67b through which the terminal pins 75 are inserted in the first circuit board 62, the resin layer 65, the shield plate 66, and the second circuit board 67, respectively.
  • the infrared light receiving element 40 and the signal processing circuit are electrically connected via a terminal pin 75.
  • the first circuit board 62, the resin layer 65, the shield plate 66, and the second circuit board 67 are stacked, and a through hole is formed by a single drilling process that forms a through hole penetrating in the thickness direction of the circuit block 6.
  • the sealing portions 74 and 74 (74a and 74b) for sealing the terminal pins 75a and 75b are formed of sealing glass having insulating properties, and the sealing portion 74 for sealing the terminal pins 75c. (74c) is formed of a metal material.
  • the terminal pins 75 a and 75 b are electrically insulated from the stem 71, whereas the ground terminal pin 75 c has the same potential as the stem 71. Therefore, although the potential of the shield plate 66 is set to the ground potential, it may be set to a potential other than the ground potential as long as it is a specific potential capable of performing the shielding function.
  • the circuit block 6 on which the infrared light receiving element 40 is mounted is mounted on the stem 71 via the spacer 9, and then the infrared optical filter 20 closes the window portion 7a.
  • the inside of the metal package 7 composed of the cap 72 and the stem 71 may be sealed by welding the outer flange portion 72c of the cap 72 and the flange portion 71c of the stem 71 which are fixed together.
  • dry nitrogen is sealed in order to prevent the characteristic change of the infrared light receiving element 40 due to the influence of humidity or the like.
  • the package 7 in the present embodiment is a can package as described above, and can improve the shielding effect against external noise and improve weather resistance by improving airtightness.
  • the package 7 may be composed of a ceramic package having a shielding effect.
  • the above-described infrared optical filter 20 includes a filter main body 20a in which each of the narrowband filter sections 2 1 and 2 2 and a broadband cutoff filter section 3 described later are formed, and extends outward from the periphery of the filter main body section 20a. And a flange portion 20b fixed to the peripheral portion of the window portion 7a in the cap 72.
  • the planar view shape of the filter portion 20a is a rectangular shape (in this embodiment, a square shape)
  • the outer peripheral shape of the flange portion 20b is a rectangular shape (in the present embodiment, a square shape). Is formed.
  • the planar shape of the filter body 20a is a square of several mm ⁇ , but the planar shape and dimensions of the filter body 20a are not particularly limited.
  • the infrared optical filter 20 includes a filter forming substrate 1 made of an infrared transmitting material (for example, Si) and one surface side (upper surface side in FIG. 4) of the filter forming substrate 1.
  • a pair of narrowband transmission filter sections 2 1 and 2 2 that selectively transmit each infrared ray having a second selected wavelength are provided.
  • the infrared optical filter 20 is formed on the other surface side (the lower surface side in FIG. 4) of the filter forming substrate 1, and has a longer wavelength than the infrared reflection band set by each of the narrowband filter portions 2 1 and 2 2.
  • the broadband cutoff filter unit 3 that absorbs the infrared rays is provided.
  • a pair of narrowband transmission filter portions 2 1 and 2 2 are arranged in parallel on the one surface side of the filter forming substrate 1.
  • Each of the narrow band transmission filter sections 2 1 and 2 2 includes a first ⁇ / 4 multilayer film 21 in which a plurality of types (two types here) of thin films 21b and 21a having different refractive indexes and the same optical film thickness are stacked.
  • 23 1 and 23 2 The allowable range of variation in optical film thickness for the two types of thin films 21a and 21b is about ⁇ 1%, and the allowable range of variation in physical film thickness is determined according to the variation in optical film thickness.
  • the infrared optical filter 20 absorbs far-infrared rays as a material (low refractive index material) of the thin film 21b which is a low refractive index layer in the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22.
  • Al 2 O 3 which is a kind of far-infrared absorbing material is adopted, and Ge is adopted as a material (high refractive index material) of the thin film 21a which is a high refractive index layer.
  • the far-infrared-absorbing material Al 2 O 3 without necessarily, Al 2 O 3 SiO 2 and an oxide other than may be employed Ta 2 O 5, towards the SiO 2 of Al 2 Since the refractive index is lower than O 3 , the refractive index difference between the high refractive index material and the low refractive index material can be increased.
  • the first selected wavelength which is a specific wavelength generated by resonance emission of CO 2 gas in the flame at the time of fire is 4.3 ⁇ m (or 4.4 ⁇ m) and may be generated in a house or the like.
  • CH 4 (methane) is 3.3 ⁇ m
  • CO (carbon monoxide) is 4.7 ⁇ m
  • NO (nitrogen monoxide) is 5.3 ⁇ m. Therefore, in the infrared optical filter 20 in the present embodiment, the second selected wavelength that is the reference wavelength is set to 3.9 ⁇ m that is relatively close to the first selected wavelength, and the first selected wavelength and the second selected wavelength are set.
  • the narrow-band transmission filter sections 2 1 and 2 2 have a reflection band in the infrared region of about 3.1 ⁇ m to 5.5 ⁇ m.
  • the reflection bandwidth ⁇ is essential.
  • the reflection band has a wave number that is the reciprocal of the wavelength of the incident light, as shown in FIG. 5, if the set wavelength corresponding to four times the optical film thickness common to the thin films 21a and 21b is ⁇ 0 .
  • 1 / ⁇ 0 is the center of symmetry.
  • the first ⁇ / w is set so that the infrared light of the first selected wavelength can be detected by appropriately setting the optical film thicknesses of the wavelength selection layers 23 1 and 23 2.
  • the set wavelength ⁇ 0 of the four multilayer films 21 and the second ⁇ / 4 multilayer film 22 is 4.0 ⁇ m.
  • the physical film thickness of each of the thin films 21a and 21b is ⁇ , where n H is the refractive index of the high refractive index material that is the material of the thin film 21a, and n L is the refractive index of the low refractive index material that is the material of the thin film 21b.
  • 0 / 4n H is set such that ⁇ 0 / 4n L.
  • the film thickness is set to 250 nm
  • the physical film thickness of the thin film 21b formed of the low refractive index material is set to 588 nm.
  • a ⁇ / 4 multilayer film in which thin films 21b made of a low refractive index material and thin films 21a made of a high refractive index material are alternately laminated on one surface side of the filter forming substrate 1 made of an Si substrate.
  • the simulation results are shown in FIG.
  • the horizontal axis represents the wavelength of incident light (infrared rays) and the vertical axis represents the transmittance.
  • FIG. 7 shows the simulation result of the reflection bandwidth ⁇ of the ⁇ / 4 multilayer film (refractive index periodic structure) when the refractive index of the low refractive index material is changed using Ge as the high refractive index material. Note that “A”, “B”, and “C” in FIG. 7 correspond to the points “A”, “B”, and “C” in FIG. 6, respectively.
  • the reflection bandwidth ⁇ increases as the refractive index difference between the high refractive index material and the low refractive index material increases.
  • the high refractive index material is Ge
  • the low refractive index It can be seen that by adopting Al 2 O 3 or SiO 2 as the material, a reflection band in the infrared region of at least 3.1 ⁇ m to 5.5 ⁇ m can be secured and the reflection bandwidth ⁇ can be 2.4 ⁇ m or more.
  • the number of first ⁇ / 4 multilayer films 21 is 4, the number of second ⁇ / 4 multilayer films 22 is 6, and the high refractive index material of the thin film 21a is Ge,
  • the low refractive index material of the thin film 21b is Al 2 O 3
  • the material of the wavelength selection layer 23 that is interposed between the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 is a low refractive index material.
  • FIGS. 9 and 10 show the simulation results of the transmission spectrum when Al 2 O 3 is used and the optical film thickness of the wavelength selection layer 23 is variously changed in the range of 0 nm to 1600 nm.
  • the optical film thickness of the wavelength selection layer 23 is the product of the refractive index n and the physical film thickness d, where n is the refractive index of the material of the wavelength selection layer 23 and d is the physical film thickness of the wavelength selection layer 23. That is, it is obtained by nd. Also in this simulation, assuming that there is no absorption in each thin film 21a, 21b (that is, the extinction coefficient of each thin film 21a, 21b is 0), the set wavelength ⁇ 0 is 4 ⁇ m, and the physical film thickness of the thin film 21a. Was 250 nm, and the physical film thickness of the thin film 21b was 588 nm.
  • the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 form a reflection band in the infrared region of 3 ⁇ m to 6 ⁇ m.
  • the optical film thickness nd of the layer 23 it can be seen that a narrow transmission band is localized in the reflection band of 3 ⁇ m to 6 ⁇ m.
  • the transmission peak wavelength can be continuously changed in the range of 3.1 ⁇ m to 5.5 ⁇ m. I understand that.
  • the transmission peak wavelengths are 3.3 ⁇ m, 4.0 ⁇ m, 4.3 ⁇ m, 4.7 ⁇ m and 5.3 ⁇ m.
  • the specific wavelength is 4.3 ⁇ m. It is possible to sense various gases such as CH 4 having a specific wavelength of 3.3 ⁇ m, CO having a specific wavelength of 4.7 ⁇ m, and NO having a specific wavelength of 5.3 ⁇ m.
  • the range of 0 nm to 1600 nm of the optical film thickness nd corresponds to the range of 0 nm to 941 nm of the physical film thickness d. Further, when the optical film thickness nd of the wavelength selection layer 23 is 0 nm, that is, when there is no wavelength selection layer 23 in FIG.
  • the transmission peak wavelength is 4000 nm when the first ⁇ / 4 multilayer film 21 and the second This is because the set wavelength ⁇ 0 of the ⁇ / 4 multilayer film 22 is set to 4 ⁇ m (4000 nm), and the set wavelength ⁇ of the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 is set.
  • the transmission peak wavelength when there is no wavelength selection layer 23 can be changed.
  • the infrared reflection band set by the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 that is, the narrow band transmission filter sections 2 1 , 2).
  • Al 2 O 3 which is a far-infrared absorbing material that absorbs infrared rays in a longer wavelength range than the infrared reflection band set by 2 ) is adopted.
  • the far-infrared absorbing material MgF 2 , Al 2 O 3 , SiO x , Ta 2 O 5 , SiN x were examined.
  • the film forming conditions when forming the film on the Si substrate with the film thickness set to 1 ⁇ m for each of the MgF 2 film, the Al 2 O 3 film, the SiO x film, the Ta 2 O 5 film, and the SiN x film Is set as shown in Table 1 below, and the results of measuring the transmission spectra of the MgF 2 film, Al 2 O 3 film, SiO x film, Ta 2 O 5 film, and SiN x film are shown in FIG.
  • an ion beam assisted deposition apparatus was used as a film forming apparatus for the MgF 2 film, the Al 2 O 3 film, the SiO x film, the Ta 2 O 5 film, and the SiN x film.
  • IB condition in Table 1 is an ion beam assist condition when forming a film with an ion beam assisted deposition apparatus
  • no IB means no ion beam irradiation
  • oxygen IB means “ArIB” means irradiation with an oxygen ion beam
  • ArIB means irradiation with an argon ion beam.
  • the horizontal axis indicates the wavelength and the vertical axis indicates the transmittance.
  • A1 is the Al 2 O 3 film
  • A2 is the Ta 2 O 5 film
  • A3 is the SiO x film.
  • A4 is the SiN x film
  • A5 is the MgF 2 film.
  • the evaluation item of “optical characteristics: absorption” was evaluated by the absorption rate of far infrared rays of 6 ⁇ m or more calculated from the transmission spectrum of FIG.
  • Table 2 for each evaluation item, “ ⁇ ”, “ ⁇ ”, “ ⁇ ”, and “ ⁇ ” are listed in order from the highest ranked to the lowest ranked.
  • the evaluation item “optical characteristics: absorption” the higher the far infrared absorptivity, the higher the evaluation rank, and the lower far infrared absorptivity, the evaluation rank is lowered.
  • the evaluation item of “refractive index” from the viewpoint of increasing the difference in refractive index from the high refractive index material, the lower the refractive index, the higher the evaluation rank, and the higher refractive index, the lower the evaluation rank. It is. As for the evaluation item of “easiness of film formation”, the evaluation rank is higher when a dense film is easily obtained by vapor deposition or sputtering, and the evaluation rank is lower when a dense film is difficult to obtain. . However, for each evaluation item, SiO x is evaluated as SiO 2 and SiN x is evaluated as Si 3 N 4 .
  • the far-infrared absorptivity is improved as compared with the case where the far-infrared absorbing material is SiO x or SiN x. Can do.
  • Al 2 O 3 is more preferable than T 2 O 5 from the viewpoint of increasing the refractive index difference from the high refractive index material.
  • the SiN x as the far-infrared-absorbing material, it can increase the moisture resistance of the thin film 21b formed by far-infrared-absorbing material.
  • the refractive index difference from the high refractive index material can be increased, and the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 The number of stacked layers (number of layers) can be reduced.
  • a thin film 21b having a predetermined physical film thickness (here, 588 nm) made of Al 2 O 3 which is a low refractive index material and a high refractive index material are formed on the entire surface on one surface side of the filter forming substrate 1 made of a Si substrate.
  • the second position from the top of the first ⁇ / 4 multilayer film 21 is positioned.
  • the same material as the thin film 21b in this case, Al 2 O 3 is a low refractive index material
  • the wavelength selection layer 23 1 is set an optical thickness in accordance with one of the narrowband transmission filter section 2 first selected wavelength consists
  • the structure shown in FIG. 12A is obtained by performing a wavelength selective layer film forming step of forming a film.
  • the low refractive index material is Al 2 O 3 as described above
  • an ion beam assisted vapor deposition method is employed to irradiate an oxygen ion beam during the formation of the thin film 21b, thereby increasing the density of the thin film 21b.
  • the low refractive index material SiO x
  • SiN x is far-infrared-absorbing material other than Al 2 O 3.
  • the thin film 21b made of the far-infrared absorbing material by ion beam assisted deposition, and the chemical composition of the thin film 21b made of the low refractive index material can be precisely controlled.
  • the denseness of the thin film 21b can be improved.
  • Figure 12B Get the structure shown.
  • the resist layer 31 as a mask, the first lambda / 4 top of the thin film 21a unnecessary portion of the wavelength selection layer 23 1 as an etching stopper layer on the selectively etched to wavelength selection layer patterning process of the multilayer film 21
  • the structure shown in FIG. 12C is obtained.
  • the wavelength selective layer patterning step if the low refractive index material is an oxide (Al 2 O 3 ) and the high refractive index material is a semiconductor material (Ge) as described above, a hydrofluoric acid solution is used as an etching solution. By employing the wet etching used, it is possible to perform etching with a higher etching selectivity than when dry etching is employed.
  • dilute hydrofluoric acid for example, dilute hydrofluoric acid having a concentration of 2% hydrofluoric acid
  • HF hydrofluoric acid
  • H 2 O pure water
  • a resist layer removing step for removing the resist layer 31 is performed to obtain the structure shown in FIG. 12D.
  • the thin film 21a having a predetermined physical film thickness (250 nm) made of Ge, which is a high refractive index material, and a low refractive index material are formed on the entire surface of the one surface side of the filter forming substrate 1.
  • a second ⁇ / 4 multilayer film forming step of forming the second ⁇ / 4 multilayer film 22 by alternately laminating thin films 21b having a predetermined physical film thickness (588 nm) made of Al 2 O 3 thus, the structure shown in FIG. 12E is obtained.
  • the optical film thickness nd is equivalent to the case of 0 nm.
  • each thin film 21a, 21b for example, two kinds of thin films 21a, 21b can be continuously formed by employing a vapor deposition method, a sputtering method, or the like.
  • a vapor deposition method for example, Al 2 O 3
  • a wavelength selection layer film forming step of forming a wavelength selection layer 23 i having an optical film thickness set according to a selected wavelength of i (here, i 1) on the laminated film, and a wavelength selection layer film formation step of the formed wavelength selection layer 23 i Te of the arbitrary 1
  • narrow-band transmission filter unit wavelength selection layer forming step comprising the unnecessary portion other than the portion corresponding to the 2 i from the wavelength selection layer patterning step of etching the layer of top of the laminated film as an etching stopper layer once
  • a plurality of narrow-band transmission filter portions 2 1 and 2 2 are formed.
  • the wavelength selection layer forming step is performed a plurality of times in the middle of the above basic steps, the infrared optical filter 20 having more selected wavelengths can be manufactured with one chip.
  • part 2 i 1 to form at least one wavelength selective layer 23 1 of the pattern by etching a portion other than the portion corresponding.
  • a wavelength selection layer 23 2 is the same material as the wavelength selection layer 23 1 and the wavelength If the optical thickness than the selective layer 23 1 is set smaller, so as to form two wavelength selective layers 23 1, 23 2 of the pattern by etching halfway thin film on the laminated film Also good.
  • the far-infrared absorbing material of one of the two types of thin films 21a and 21b is SiO x or SiN x and the other thin film 21a is Si
  • Si the use of an ion beam assisted deposition apparatus for the evaporation source, and a vacuum atmosphere when forming a thin film 21a made of Si
  • when forming a thin film 21b made of SiO x is an oxide illuminates the oxygen ion beam
  • the evaporation sources of the two types of thin films 21a and 21b can be made common, so that it is not necessary to prepare an ion beam assisted vapor deposition apparatus having a plurality of evaporation sources, and the manufacturing cost can be reduced. Cost reduction can be achieved.
  • the far-infrared absorbing material of one thin film 21b of the two types of thin films 21a and 21b is SiO x or SiN x and the other thin film 21a is Si
  • Si is used.
  • a thin film 21a made of Si is formed using a target sputtering apparatus, a vacuum atmosphere is used.
  • the infrared optical filter 20 having a transmission peak wavelength (center wavelength) at 9 ⁇ m and approximately 4.3 ⁇ m can be realized with one chip.
  • both of the transmission spectrum having a transmission peak wavelength of about 3.9 ⁇ m and the transmission spectrum having a transmission peak wavelength of about 4.3 ⁇ m have a full width at half maximum (FWHM) of about 100 nm.
  • FWHM full width at half maximum
  • the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 may have a refractive index periodic structure, and may be a laminate of three or more types of thin films.
  • the broadband cutoff filter unit 3 of the infrared optical filter 20 will be described.
  • the broadband cutoff filter unit 3 is configured by a multilayer film in which a plurality of types (here, two types) of thin films 3a and 3b having different refractive indexes are stacked.
  • the broadband cutoff filter unit 3 employs Al 2 O 3 , which is a kind of far-infrared absorbing material that absorbs far-infrared rays, as the material of the thin film 3a that is a low refractive index layer having a relatively low refractive index, Ge is employed as the material of the thin film 3b, which is a high refractive index layer having a relatively high refractive index, and the thin films 3a and 3b are alternately stacked to form a stack number of 11, but this stack number is particularly limited. Not what you want.
  • the broadband cutoff filter unit 3 is configured by the thin film 3a which is the low refractive index layer as the uppermost layer farthest from the filter forming substrate 1.
  • the far-infrared-absorbing material is not limited to Al 2 O 3, Al 2 O 3 SiO 2 is an oxide other than, Ta 2 O 5 may be adopted, towards the SiO 2 is Al 2 O Since the refractive index is lower than 3, the difference in refractive index between the high refractive index material and the low refractive index material can be increased. Further, as the far infrared ray absorbing material, SiN x which is a nitride may be adopted.
  • the broadband cutoff filter unit 3 is formed of Al 2 O 3 which is a far-infrared absorbing material in which one of the two types of thin films 3a and 3b absorbs far-infrared rays. It suffices that at least one of the plurality of types is formed of a far-infrared absorbing material.
  • the plurality of types is formed of a far-infrared absorbing material.
  • a multilayer film may be laminated in the order of film-Al 2 O 3 film-Ge film. In this case, two kinds of thin films out of three kinds of thin films are formed of a far-infrared absorbing material. .
  • the above-described broadband cutoff filter unit 3 absorbs far-infrared rays having a longer wavelength range than the infrared reflection band set by the narrow-band transmission filter units 2 1 and 2 2 .
  • the broadband cutoff filter unit 3 employs Al 2 O 3 as a far-infrared absorbing material that absorbs infrared rays, but as the far-infrared absorbing material, similar to the narrow-band transmission filter units 2 1 and 2 2 described above. Examined five types of MgF 2 , Al 2 O 3 , SiO x , Ta 2 O 5 , and SiN x .
  • FIG. 14 shows the results of analysis by FT-IR, where the horizontal axis represents the wave number and the vertical axis represents the absorptance.
  • A1 is a sample without ion beam assist
  • “A2”, “A3” , “A4”, “A5”, and “A6” indicate the analysis results of the respective samples when the ion beam irradiation amount is changed from the smaller one to the larger one.
  • the absorptance in the vicinity of 3400 cm ⁇ 1 due to moisture can be reduced, and as the ion beam irradiation amount increases, the absorptance in the vicinity of 3400 cm ⁇ 1 due to moisture decreases.
  • the film quality of the Al 2 O 3 film can be improved by ion beam assist and the denseness can be improved.
  • the far infrared ray absorbability is higher than when the far infrared ray absorbing material is SiO x or SiN x . Can be improved.
  • the inventors of the present application measured the transmission spectrum of a reference example in which a 1 ⁇ m Al 2 O 3 film was formed on a Si substrate. As a result, an actual measurement value as shown in “A1” in FIG. 15A was obtained. Obtaining the knowledge that “A1” is deviated from the calculated value indicated by “A2” in FIG. 15A, the optical parameters (refractive index, absorption coefficient) of the thin film 3a formed of Al 2 O 3 are measured in FIG. 15A. The value was calculated from the value “A1” according to the Cauchy equation. The calculated optical parameters are shown in FIG. 15B. In the new optical parameters shown in FIG.
  • neither the refractive index nor the absorption coefficient is constant in the wavelength range of 800 nm to 20000 nm, and the refractive index gradually decreases as the wavelength increases, and the wavelength is 7500 nm. In the wavelength region of ⁇ 15000 nm, the absorption coefficient gradually increases as the wavelength increases.
  • the transmission peak wavelength has a laminated structure of Table 3 is the narrow band pass filter section 2 1 of 4.4 [mu] m, the following Table 4
  • Table 4 A simulation result of the transmission spectrum of a portion where the broadband cutoff filter portion 3 having the laminated structure is overlapped in the thickness direction of the filter forming substrate 1 is shown in “A1” of FIG.
  • the simulation result of the comparative example in which the refractive index of the Al 2 O 3 film is constant and the absorption coefficient is constant at 0 without using the new optical parameters of the Al 2 O 3 film described above is “A2” in FIG. Shown in In each of the examples and comparative examples, simulation was performed with the refractive index of Ge being constant at 4.0 and the absorption coefficient being constant at 0.0.
  • the horizontal axis represents the wavelength of incident light (infrared rays) and the vertical axis represents the transmittance.
  • the transmission spectrum “A2” of the comparative example that does not use the new optical parameter of the Al 2 O 3 film far infrared rays of 9000 nm to 20000 nm are not blocked, whereas the Al 2 O 3 film
  • the transmission spectrum “A1” of the embodiment using the new optical parameters far infrared rays of 9000 nm to 20000 nm are also blocked, the broadband cutoff filter unit 3 having 29 layers and the narrow band transmission filter having 11 layers.
  • part 2 1 wavelength and can be cut off broadband infrared 800 nm ⁇ 20000 nm, it can be seen that can localize a transmission band of the narrow band only in the vicinity of 4.3 [mu] m.
  • the transmission spectrum of the broadband cutoff filter unit 3 is as shown in FIG. 17, for example. In the example of FIG. 17, near infrared rays of 4 ⁇ m or less and far infrared rays of 5.6 ⁇ m or more are blocked.
  • the thin film 3a made of, for example, an Al 2 O 3 film and the thin film 3b made of, for example, a Ge film are formed on the other surface side of the filter forming substrate 1 made of an Si substrate.
  • a wide band blocking filter unit forming step of forming the broadband blocking filter unit 3 by alternately laminating is performed, and then the narrow band transmission filter units 2 1 , 2 are formed on the one surface side of the filter forming substrate 1 as described above. 2 may be formed.
  • the infrared flame detection apparatus shown in FIG. 18 is an infrared receiving device in which a pair of pyroelectric elements 4 1 and 4 2 having different polarities are arranged in parallel on a pyroelectric element forming substrate 41 and connected in reverse series.
  • An infrared optical filter 20 having an element 40, a broadband cutoff filter unit 3 and two narrow-band transmission filter units 2 1 and 2 2 having different transmission wavelength ranges and disposed in front of the infrared light receiving device 40;
  • Amplifying unit (amplifying circuit) 63a that amplifies 40 outputs (a differential output of a pair of pyroelectric elements 4 1 and 4 2 ), and determines whether there is a fire flame based on the output signal of the amplifying unit 63a
  • a signal processing unit 100 including a microcomputer or the like.
  • the signal processing unit 100 may output a fire detection signal to an external notification device, or a display device such as an LED or a display, a speaker, or a buzzer. You may make it alert
  • the amplification unit 63a is provided in the above-described IC 63, but the IC 63 may be provided with not only the amplification unit 63a but also the signal processing unit 100. In short, the signal processing unit 100 may be provided in the infrared flame detector of the present embodiment.
  • the infrared receiving element 40 1, 40 2 each consisting of a single pyroelectric element, disposed in front of the infrared receiving element 40 1, 40 2 are formed by using a sapphire substrate Infrared optical filters 320 1 and 320 2 , two amplifying units (amplifying circuits) 163 1 and 163 2 for amplifying output signals of the respective infrared light receiving elements 40 1 and 40 2 , and two amplifying units 163 1, 163 a subtracter 164 for obtaining a difference between the second output signal, and a microcomputer signal processing unit 100 consisting of a 'determines the presence or absence of fire flames on the basis of the output signal of the subtracter 164.
  • a microcomputer signal processing unit 100 consisting of a 'determines the presence or absence of fire flames on the basis of the output signal of the subtracter 164.
  • the infrared flame detection apparatus having the configuration shown in FIG. 19 includes infrared light receiving elements 40 1 and 40 2 , can packages 170 1 and 170 2 containing the infrared light receiving elements 40 1 and 40 2 , and an infrared optical filter 320 1. constitute an infrared sensor 340 1, 340 2 and 320 2.
  • the output signals of the infrared light receiving elements 40 1 and 40 2 are weak and are easily affected by electromagnetic noise, so the two infrared sensors 340 1 and 340 2 and the two amplifying units 163 are used.
  • the infrared flame detectors constitute the infrared flame detectors by shielded by the shield member 180, the size of the infrared flame detectors compared to the size of the can package 170 1, 170 2 As a result, the size of the infrared flame detector increases.
  • the infrared flame detector having the configuration shown in FIG. 18 uses the above-described infrared flame detector, the infrared flame is compared with the infrared flame detector having the configuration shown in FIG. The detector can be dramatically downsized, and the infrared flame detector can be downsized dramatically.
  • the infrared flame detection apparatus having the configuration shown in FIG. 18 includes the infrared optical filter 20 described above, there is an advantage that the influence of infrared rays generated by heat radiation can be removed.
  • the object is a black body
  • the relationship between the temperature of the object and the radiant energy is as shown in FIG. 20, and the infrared radiant energy distribution radiated from the object depends on the temperature of the object.
  • the wavelength of the infrared ray that gives the maximum value of the radiant energy distribution is ⁇ [ ⁇ m] and the absolute temperature of the object is T [K]
  • the spectrum emitted from the heat source is very broad compared to the spectrum emitted from the light emitting diode.
  • the infrared flame detection device of the comparative example shown in FIG. 19 causes noise and causes saturation of the amplifying units 163 1 and 163 2 , which causes a decrease in sensitivity.
  • saturation of the amplifying unit 63a can be prevented and sensitivity can be improved.
  • the infrared radiation spectrum generated by the resonance radiation of the CO 2 gas is a narrow-band radiation spectrum having a peak wavelength of 4.3 ⁇ m.
  • disturbance light such as sunlight, heat source, arc, and illumination generally rarely emits a spectrum of a specific wavelength, and generally has a broad emission spectrum with a wide band. Therefore, in the present embodiment, as described above, the first selected wavelength is set to 4.3 ⁇ m which is the peak wavelength of CO 2 gas resonance radiation, and the second selected wavelength is set to 3.9 ⁇ m in the vicinity of 4.3 ⁇ m. is there.
  • the second selected wavelength is preferably set to a wavelength such that the infrared intensity of the second selected wavelength of the disturbance light is as close as possible to the infrared intensity of 4.3 ⁇ m of the disturbance light.
  • the selected wavelengths of the infrared optical filters 320 1 and 320 2 are 4.3 ⁇ m and 3.9 ⁇ m, respectively, and the infrared light receiving elements 40 1 and 40 2 are respectively selected.
  • the output signals of 4.3 ⁇ m and 3.9 ⁇ m due to the flames, and Is1 and Is2, respectively, and the direct current bias components due to the infrared rays of 4.3 ⁇ m and 3.9 ⁇ m due to only the disturbance light are Id1 and Is2, respectively.
  • the amplification factors of the amplifiers 163 1 and 163 2 are G1 and G2, and the output signals of the amplifiers 163 1 and 163 2 are I1 and I2.
  • I1 (Is1 + Id1) ⁇ G1
  • the amplifiers 163 1 and 163 2 are saturated, and the S / N ratio is lowered.
  • the output of the element 40 becomes substantially zero), and the gain of the amplifying unit 63a that amplifies the output of the infrared light receiving element 40 can be increased to improve the S / N ratio.
  • the infrared optical filter 20 includes the filter forming substrate 1 made of an infrared transmitting material and the focal surface on the one surface side of the filter forming substrate 1.
  • Infrared light of a first selected wavelength formed at a portion corresponding to each of the electric elements 4 1 , 4 2 and having a specific wavelength (4.3 ⁇ m) generated by resonance emission of CO 2 gas caused by a flame and other than the specific wavelength
  • a pair of narrow-band transmission filter sections 2 1 and 2 2 that selectively transmit each infrared ray having a second selected wavelength that is a reference wavelength (for example, 3.9 ⁇ m), and the filter forming substrate 1 described above.
  • a broadband cutoff filter unit 3 that is formed on the other surface side and absorbs infrared light having a wavelength longer than the infrared reflection band set by the narrow-band transmission filter units 2 1 and 2 2 is provided.
  • each narrow-band transmission filter section 2 1 , 2 2 has a first ⁇ / 4 in which a plurality of types of thin films 21 a and 21 b having different refractive indexes and the same optical film thickness are stacked.
  • the selective layers 23 1 and 23 2 are included.
  • the distance between the centers of the parts 2 1 and 2 2 can be shortened, and the difference in optical path length between the infrared of the specific wavelength and the infrared of the reference wavelength can be reduced.
  • the pyroelectric elements 4 1 and 4 2 of the infrared light receiving element 40 can be reduced. The light receiving efficiency can be improved.
  • the broadband cutoff filter portion 3 of the infrared optical filter 20 is formed of a multilayer film in which a plurality of types of thin films 3a and 3b having different refractive indexes are stacked, and the plurality of types of thin films. At least one kind of thin film 3a out of 3a and 3b is formed of a far-infrared absorbing material that absorbs far-infrared rays.
  • the infrared flame detector of the present embodiment while reducing the number of layers of the multilayer film, the light interference effect by the multilayer film constituting the broadband cutoff filter unit 3 and the multilayer film are configured.
  • an infrared blocking function in a wide band from the near infrared to the far infrared can be realized without using a sapphire substrate, and the cost can be reduced.
  • the first ⁇ / 4 multilayer film 21 and the second ⁇ / 4 multilayer film 22 are also used in the narrow-band transmission filter portions 2 1 and 2 2 of the infrared optical filter 20.
  • a low-cost infrared optical filter 20 that can be selectively transmitted can be realized.
  • the infrared optical filter 20 employs an oxide or nitride as the far-infrared absorbing material, it prevents the thin-films 3a and 21b made of the far-infrared absorbing material from being oxidized and changing the optical characteristics. can do.
  • the broadband cutoff filter unit 3 and the narrowband transmission filter units 2 1 and 2 2 are both formed with the above-described oxide or nitride as the uppermost layer farthest from the filter forming substrate 1. Therefore, it is possible to prevent the physical properties of the uppermost thin films 3a and 21b from being changed due to reaction with moisture or oxygen in the air, adsorption or adhesion of impurities, and the stability of the filter performance is high.
  • reflection on the surfaces of the broadband cutoff filter unit 3 and the narrowband transmission filter units 2 1 and 2 2 can be reduced, and the filter performance can be improved.
  • the thin film 3a formed of the far infrared absorbing material and the thin film 3b formed of Ge, which is a higher refractive index material than the far infrared absorbing material, are alternately stacked, thereby blocking the broadband. Since the multilayer film of the filter unit 3 is configured, the refractive index difference between the high refractive index material and the low refractive index material can be increased compared to the case where the high refractive index material is Si, PbTe, or ZnS. The number of laminated multilayer films can be reduced.
  • the difference in refractive index between the high refractive index material and the low refractive index material in the multilayer film may be larger than when the high refractive index material is ZnS.
  • the number of multilayer films (number of layers) can be reduced.
  • the number of stacked layers can be reduced for the same reason with respect to the narrow-band transmission filter portions 2 1 and 2 2 .
  • a Si substrate is used as the filter forming substrate 1 of the infrared optical filter 20, but the filter forming substrate 1 is not limited to the Si substrate but may be a Ge substrate.
  • Data disclosed on the Internet regarding the transmission characteristics of Si and Ge are shown in FIGS. 21 and 22, respectively ([Search February 25, 2009], Internet ⁇ URL: http://www.spectra.co .jp / kougaku.files / k_kessho.files / ktp.htm>).
  • the filter forming substrate 1 is a sapphire substrate, an MgO substrate, or a ZnS substrate by using a Si substrate or a Ge substrate as the filter forming substrate 1. Compared to cost reduction.
  • the package 7 is made of metal, and the filter forming substrate 1 is made of a conductive bonding material (for example, silver paste, solder, etc.) with respect to the cap 72 of the package 7. It joins by the junction part 58 which becomes and is electrically connected.
  • the filter forming substrate 1 and the package 7 can perform electromagnetic shielding, and the influence of external radiation noise (electromagnetic noise) on the infrared light receiving element 40 is prevented.
  • the sensitivity can be improved by improving the S / N ratio.
  • the window portion 7a of the cap 72 is opened in a rectangular shape, and is positioned on the inner peripheral surface and the peripheral portion of the window portion 7a in the cap 72 by the infrared optical filter 20.
  • a step portion 20c is formed, and the step portion 20c in the infrared optical filter 20 is fixed to the cap 72 via a joint portion 58 made of the above-mentioned joining material.
  • the infrared optical filter 20 and can increase the parallelism between the infrared receiving element 40, the narrow band pass filter section 2 1 of the infrared optical filter 20, 2 2 of the narrow band pass filter unit in the optical axis direction 2 1 , 2 2 and the pyroelectric elements 4 1 , 4 2 of the infrared light receiving element 40 can be improved in distance accuracy, and the optical axes of the narrow band transmission filter sections 2 1 , 2 2 and the pyroelectric elements 4 1. , it is possible to improve the alignment accuracy between the optical axes of the four second light receiving surface.
  • the infrared flame detector of the present embodiment since the components of the amplifying unit (amplifying circuit) 63a that amplifies the output of the infrared light receiving element 40 are housed in the package 7, the infrared light receiving element 40 and the amplifying unit Since the electrical path to 63a can be shortened and the amplifying unit 63a is also electromagnetically shielded, high sensitivity can be achieved by further improving the S / N ratio.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Fire-Detection Mechanisms (AREA)
PCT/JP2010/071813 2009-12-09 2010-12-06 赤外線式炎検知器 WO2011071011A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP10835931A EP2511679A1 (en) 2009-12-09 2010-12-06 Infrared flame detector
KR1020127016801A KR101372989B1 (ko) 2009-12-09 2010-12-06 적외선 불꽃 검출기
US13/514,631 US20120298867A1 (en) 2009-12-09 2010-12-06 Infrared frame detector
JP2011545201A JP5838347B2 (ja) 2009-12-09 2010-12-06 赤外線式炎検知器
CN2010800559006A CN102713540A (zh) 2009-12-09 2010-12-06 红外线式火焰检测器

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CN102384788B (zh) * 2011-11-11 2013-07-03 山东省科学院自动化研究所 手持式防爆红紫外火焰探测器现场检测装置
CN102384788A (zh) * 2011-11-11 2012-03-21 山东省科学院自动化研究所 手持式防爆红紫外火焰探测器现场检测装置
EP2639778A1 (en) * 2012-03-12 2013-09-18 Honeywell International, Inc. Method and device for detection of multiple flame types
US9587987B2 (en) 2012-03-12 2017-03-07 Honeywell International Inc. Method and device for detection of multiple flame types
WO2014014534A2 (en) * 2012-04-26 2014-01-23 Xyratex Technology Ltd. Monitoring radiated infrared
WO2014014534A3 (en) * 2012-04-26 2014-04-10 Xyratex Technology Ltd. Monitoring radiated infrared
JP2014048161A (ja) * 2012-08-31 2014-03-17 Asahi Kasei Electronics Co Ltd 赤外線センサモジュール
US9528879B2 (en) 2013-01-21 2016-12-27 Panasonic Intellectual Property Management Co., Ltd. Infrared detection element, infrared detector, and infrared type gas sensor
WO2014112392A1 (ja) * 2013-01-21 2014-07-24 パナソニック株式会社 赤外線検出素子、赤外線検出器及び赤外線式ガスセンサ
JP2014142236A (ja) * 2013-01-23 2014-08-07 Panasonic Corp 赤外線受光ユニット、赤外線式ガスセンサ
US9335209B2 (en) 2014-02-26 2016-05-10 Seiko Epson Corporation Optical module and electronic apparatus
US10203494B2 (en) 2014-02-26 2019-02-12 Seiko Epson Corporation Optical module and electronic apparatus
JP2016102651A (ja) * 2014-11-27 2016-06-02 ホーチキ株式会社 炎検出装置
JP2017182402A (ja) * 2016-03-30 2017-10-05 能美防災株式会社 炎検知器
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JP2018200246A (ja) * 2017-05-29 2018-12-20 ホーチキ株式会社 火炎検出装置
JP2019185694A (ja) * 2018-04-18 2019-10-24 ホーチキ株式会社 炎検出装置
JP7032982B2 (ja) 2018-04-18 2022-03-09 ホーチキ株式会社 炎検出装置

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KR101372989B1 (ko) 2014-03-12
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JP5838347B2 (ja) 2016-01-06
TWI421475B (zh) 2014-01-01
US20120298867A1 (en) 2012-11-29
TW201142256A (en) 2011-12-01
CN102713540A (zh) 2012-10-03

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