WO2011070627A1 - 半導体基板の接合方法およびmemsデバイス - Google Patents
半導体基板の接合方法およびmemsデバイス Download PDFInfo
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- WO2011070627A1 WO2011070627A1 PCT/JP2009/006788 JP2009006788W WO2011070627A1 WO 2011070627 A1 WO2011070627 A1 WO 2011070627A1 JP 2009006788 W JP2009006788 W JP 2009006788W WO 2011070627 A1 WO2011070627 A1 WO 2011070627A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Definitions
- the present invention relates to a semiconductor substrate bonding method in which a semiconductor substrate on which a MEMS structure is formed and a semiconductor substrate on which an integrated circuit is formed are bonded by eutectic bonding, and a MEMS device formed by bonding the semiconductor substrate.
- a silicon wafer on which a MEMS structure is formed has a germanium layer
- a silicon wafer on which an integrated circuit is formed has an aluminum layer.
- germanium layer and aluminum layer Is known in which a eutectic alloy composed of germanium and aluminum is formed and fixed in a facing state by heating and pressurizing (see Patent Document 1).
- Such eutectic bonding provides high sealing performance and electrical continuity at the joint, and an aluminum layer formed as an electrode / wiring in the integrated circuit formation process to form a eutectic alloy.
- the germanium layer has to be newly formed at the bonding portion for bonding in addition to the process of forming the MEMS structure, and there is a problem that the film forming process before bonding becomes complicated.
- a germanium layer is formed on the bonding portion, which may adversely affect the movable structure of the MEMS structure, which is a thin film, such as deformation, adhesion, or damage.
- the present invention can bond a semiconductor substrate on which a semiconductor circuit is formed and a semiconductor substrate on which a MEMS is formed to the semiconductor substrate on which the MEMS circuit is formed while suppressing adverse effects on the MEMS structure by a simple process. It is an object of the present invention to provide a method and a MEMS device formed by joining the method.
- the semiconductor substrate bonding method of the present invention includes a first semiconductor substrate in which a MEMS structure is formed, and a bonded portion formed by bringing an aluminum-containing layer containing aluminum as a main component and a germanium layer into contact with the front and back surfaces. And a second semiconductor substrate on which an integrated circuit for controlling the MEMS structure is formed, and the first semiconductor substrate is overlapped with the first semiconductor substrate so that the front and back surfaces of the first semiconductor substrate are in direct contact with each other.
- -It is characterized by eutectic bonding by heating.
- the 2nd semiconductor substrate in which the integrated circuit was formed has an aluminum-containing layer and the germanium layer which contacted this, with respect to the 1st semiconductor substrate which built the MEMS structure
- the adverse effect on the MEMS structure can be suppressed and the semiconductor substrates can be bonded.
- the film-forming process before joining the first semiconductor substrate can be reduced, and the assembly process of the MEMS structure can be simplified.
- the MEMS structure is formed by digging into the surface of the first semiconductor substrate, and the junction is formed in a ring shape on the surface of the second semiconductor substrate so as to surround the integrated circuit. It is preferable to join the second semiconductor substrate and the second semiconductor substrate so that their surfaces are brought into contact with each other so as to include the MEMS structure and the integrated circuit.
- the MEMS structure and the integrated circuit can be packaged as a single unit while having electrical continuity between the MEMS structure and the integrated circuit and protecting from the external environment such as humidity, temperature, and dust. it can.
- the aluminum-containing layer is formed in a ring shape in plan view with a predetermined width
- the germanium layer has one or more streaky layer portions formed in a ring shape in plan view on the aluminum-containing layer. It is preferable.
- the semiconductor substrates can be bonded with high sealing properties.
- the aluminum-containing layer is formed in a ring shape in plan view with a predetermined width
- the germanium layer is formed on the aluminum-containing layer in a ring shape in plan view. It is preferable to have a plurality of branch layer portions branched from the portion.
- the eutectic alloy formed by heating and pressing is easily fixed to the first semiconductor substrate, and the bonding strength High bonding can be performed.
- pits into which the eutectic alloy generated by pressurization and heating enter are formed on the contact surface of the first semiconductor substrate that directly contacts the joint.
- the eutectic alloy in a molten state formed by heating and pressurizing in a vacuum enters the pit by a capillary phenomenon. For this reason, the eutectic alloy spreads over the pits. As a result, the eutectic alloy layer is formed so as to bite into the first semiconductor substrate, so that the bonding strength of the bonded portion can be increased.
- the pit formed in the first semiconductor substrate may be a plurality of holes formed intermittently or may be a slit-like groove formed continuously.
- the MEMS device of the present invention has a first semiconductor substrate in which a MEMS structure is formed, and a junction formed by bringing an aluminum-containing layer mainly composed of aluminum and a germanium layer into contact with each other on the front and back surfaces. And a second semiconductor substrate on which an integrated circuit for controlling the MEMS structure is formed, and a eutectic junction in a state in which the first semiconductor substrate is overlapped with a first semiconductor substrate so that one surface of the first semiconductor substrate is in direct contact with the second semiconductor substrate. It is characterized by being.
- a MEMS device can be manufactured by bonding semiconductor substrates while suppressing adverse effects on the MEMS structure.
- the MEMS structure is formed by digging into the surface of the first semiconductor substrate, and the junction is formed in a ring shape on the surface of the second semiconductor substrate so as to surround the integrated circuit. It is preferable that the second semiconductor substrate and the second semiconductor substrate are bonded to each other so that the surfaces thereof face each other and contain the MEMS structure and the integrated circuit.
- the MEMS structure and the integrated circuit have electrical continuity, and are protected from the external environment such as humidity, temperature, dust, etc., and the MEMS structure and the integrated circuit are packaged as a single unit with high accuracy.
- a MEMS device can be provided.
- the MEMS device is preferably any one of an acceleration sensor, an angular velocity sensor, an infrared sensor, a pressure sensor, a magnetic sensor, and an acoustic sensor.
- an accurate acceleration sensor, angular velocity sensor, infrared sensor, pressure sensor, magnetic sensor, and acoustic sensor can be provided by an effective package.
- 1 is an external perspective view schematically showing a MEMS chip and a CMOS chip according to an embodiment.
- 1 is a perspective view schematically showing a MEMS device according to an embodiment. It is sectional drawing showing the film-forming arrangement
- a MEMS wafer having a large number of sensing units and a CMOS wafer having a large number of integrated circuits for controlling each sensing unit are opposed to each other by eutectic bonding with a metal.
- the formed MEMS sensor and the integrated circuit are opposed to each other in separate steps, and eutectic bonding is performed.
- this eutectic bonding uses wafer level package technology (WLP technology) in which the wafers are encapsulated in a lump and then separated into chips.
- WLP technology wafer level package technology
- the MEMS device is manufactured by such eutectic bonding.
- an acceleration sensor an angular velocity sensor, an infrared sensor, a pressure sensor, a magnetic sensor, and an acoustic sensor can be considered.
- FIG. 1A is an enlarged view of one piece of a MEMS wafer (not shown) in which a large number of sensing units 12 are formed in a matrix.
- the MEMS chip 10 which is this one piece for convenience.
- the MEMS chip 10 includes a substrate 11 made of silicon (Si), and a sensing unit 12 formed in the center of the substrate 11 by a microfabrication technique.
- the sensing unit 12 is formed so as to be dug in the center of the substrate 11 and is configured with elements such as an acceleration sensor, an angular velocity sensor, an infrared sensor, a pressure sensor, a magnetic sensor, and an acoustic sensor as described above.
- the substrate 11 is provided with a joint 30a having a square ring shape in plan view so as to surround the sensing unit 12.
- the sensing unit 12 and the bonding unit 30 a are reversed so that the sensing unit 12 and the bonding unit 30 a face the CMOS chip 20 described later, and are bonded to the CMOS chip 20.
- the joint portion 30a of the MEMS chip 10 is abutted against the joint portion 30b formed on the CMOS chip 20, and both are eutectic bonded by the metal layer formed on the joint portion 30b.
- the substrate 11 corresponds to a first semiconductor substrate referred to in the claims
- the sensing unit 12 corresponds to a MEMS structure referred to in the claims.
- FIG. 1B is an enlarged view of a single piece from a CMOS wafer (not shown) in which a large number of integrated circuits 22 are formed in a matrix.
- the CMOS chip 20 which is this one piece will be described.
- the CMOS chip 20 has a substrate 21 made of silicon and an integrated circuit 22 formed on the substrate 21 by a microfabrication technique (semiconductor manufacturing technique).
- a rectangular joint 30b in plan view is disposed so as to surround the circuit central portion 23 of the integrated circuit 22 that faces the sensing portion 12 of the MEMS chip 10 during eutectic bonding.
- the integrated circuit 22 controls the sensing unit 12 of the MEMS chip 10 and is connected to input / output signal lines from the outside.
- the integrated circuit 22 has an aluminum wiring, and as will be described in detail later, the aluminum-containing layer 31 formed when the aluminum wiring is formed becomes a part of the eutectic alloy at the time of bonding. That is, the joint portion 30b of the CMOS chip 20 is formed in substantially the same shape as the joint portion 30a of the MEMS chip 10 in plan view.
- the joint portion 30b of the CMOS chip 20 includes an aluminum-containing alloy that is a eutectic alloy on the substrate 11.
- a layer 31 is formed, and a germanium layer 32 which is a eutectic alloy is formed on the aluminum-containing layer 31 (for example, film formation by sputtering or vapor deposition technique).
- the substrate 21 corresponds to the second semiconductor substrate in the claims
- the bonding portion 30b corresponds to the bonding portion of the second semiconductor substrate in the claims.
- FIG. 2 shows a MEMS device 1 configured by dicing or breaking a MEMS wafer and a CMOS wafer after bonding (bonding bonding).
- the MEMS device 1 is configured by bonding a MEMS chip 10 and a CMOS chip 20 so that the sensing unit 12 and the circuit center part 23 face each other.
- the MEMS chip 10 MEMS wafer
- the CMOS chip 20 CMOS wafer
- Apply pressure As a result, the germanium layer 32 formed on the junction 30b of the CMOS chip 20 undergoes a eutectic reaction at the interface with the aluminum-containing layer 31, and an aluminum-germanium alloy (hereinafter referred to as eutectic alloy) is generated. .
- eutectic alloy aluminum-germanium alloy
- the molten eutectic alloy is pressed against and welded to the silicon surface of the bonding portion 30a, and is firmly bonded to obtain a strong bond.
- this eutectic bonding provides electrical continuity and high sealing performance between the substrates 11 and 21.
- the heating temperature at the time of bonding is preferably about 450 ° C. in consideration of thermal damage to the sensing unit 12 and the integrated circuit 22.
- the pressurization at the time of bonding may be performed from the CMOS chip 20 side or from both the MEMS chip 10 side and the CMOS chip 20 side. And after joining, each MEMS device 1 is manufactured through the separation process from the wafer state to each chip.
- FIG. 3 is an enlarged view taken along the line AA in FIG.
- the aluminum-containing layer 31 is uniformly formed on the bonding portion 30b of the CMOS chip 20 before the eutectic bonding.
- the germanium layer 32 on the aluminum-containing layer 31 is formed so that the outer end 32 a of the germanium layer 32 is set back inside the outer end 31 a of the aluminum-containing layer 31.
- no metal layer is formed on the joint 30a of the MEMS chip 10, and the silicon surface of the substrate 11 is exposed.
- the eutectic alloy layer 33 is formed between the substrate 11 and the substrate 21 by the bonding method described above, as shown in FIG. 5B, and the MEMS chip 10 and the CMOS chip 20 are eutectic bonded. Is done.
- pressurization and heating are appropriately controlled, and the portion of the aluminum-containing layer 31 that is not in contact with the germanium layer 32 remains without performing a eutectic reaction (residual portion 34).
- the germanium layer 32 is preferably formed in a thin film rather than the aluminum-containing layer 31 in order to cause a eutectic reaction efficiently.
- the film forming process after the formation of the sensing unit 12 can be simplified, and the movable structure of the sensing unit 12 that is a thin film can be achieved. It is possible to avoid adverse effects due to film formation such as deformation, adhesion and breakage. Further, since the aluminum-containing layer 31 uses the aluminum wiring of the integrated circuit 22, the only metal film formation required for actual bonding is only germanium film formation on the bonding portion 30 b of the CMOS chip 20. It can be simplified.
- the joint portion 30 is disposed so as to surround the sensing portion 12 and the circuit center portion 23, and the eutectic alloy layer 33 is formed so as to be orthogonal to the inner and outer directions of the MEMS chip 10 and the CMOS chip 20 that face each other. Therefore, the MEMS chip 10 and the CMOS chip 20 can be bonded with high sealing performance and bonding strength.
- the germanium layer 32 is formed so that the outer end 32a of the germanium layer 32 is set back to the inner side with respect to the outer end 31a of the aluminum-containing layer 31, the eutectic in a molten state by pressurization at the time of bonding. Even if the alloy spreads outward, the formed eutectic alloy is formed without protruding from the joint 30 and can prevent conduction to an undesired electrode, thereby improving device productivity (yield). Can do. When film formation can be performed with high accuracy, the film may be formed so that the outer end of the aluminum-containing layer 31 and the outer end of the germanium layer 32 are aligned.
- the weight ratio of the germanium layer 32 to the aluminum-containing layer 31 at the time of bonding will be described with reference to FIGS. 4 and 5.
- the heating temperature and the heating time are controlled together with the pressurization pressure so that all of the germanium layer 32 and a part of the aluminum-containing layer 31 undergo a eutectic reaction at the mutual bonding surfaces.
- the weight ratio of the germanium layer 32 to the aluminum-containing layer 31 is adjusted mainly by the ratio of the film thickness of the germanium layer 32 to the aluminum-containing layer 31. Accordingly, the germanium layer 32 and the portion of the aluminum-containing layer 31 that is in direct contact with the germanium layer 32 undergo a eutectic reaction, and a part of the aluminum-containing layer 31 remains as it is (see FIG. 3B).
- FIG. 4 and 5 show test results of eutectic bonding performed by changing the thickness of the germanium layer 32 as appropriate while setting the thickness of the aluminum-containing layer 31 to be constant (800 nm).
- FIG. 4 shows the film thickness of the aluminum-containing layer 31 and the germanium layer 32 formed before eutectic bonding, the weight ratio of the germanium layer 32 to the aluminum-containing layer 31, the sealing ratio and the shear strength of the bonded portion after eutectic bonding. This shows the relationship of (joining strength).
- FIG. 5 is a graph showing the relationship between the weight ratio of the germanium layer 32 to the aluminum-containing layer 31 and the sealing rate and shear strength (bonding strength) of the bonded portion after eutectic bonding.
- the sealing rate of the joint after eutectic bonding is about 50% or more.
- FIG. 4B shows that the joint strength after eutectic bonding (shear strength) is about 30 N or more when the weight ratio of the germanium layer 32 is between 27 wt% and 52 wt%. Yes.
- the sealing rate is 100%, and the shear strength (joint strength) is 41.6 N to 56.3 N (FIG. 4). reference).
- FIGS. 6 to 8 a modified example of the film formation arrangement of the aluminum-containing layer 31 and the germanium layer 32 according to this embodiment will be described.
- 6A shows a part of the joint 30b of the CMOS chip 20 before the eutectic bonding
- FIG. 6B shows a cross section of the joint 30 before the eutectic bonding (first modification).
- the aluminum-containing layer 31 is uniformly formed on the joint portion 30 b of the CMOS chip 20, while the germanium layer 32 is formed on the aluminum-containing layer 31 in a plurality of streaks. That is, the germanium layer 32 is composed of a plurality of concentric streaky layer portions 35 having a similar shape.
- FIG. 7 shows a second modification of the arrangement of the aluminum-containing layer 31 and the germanium layer 32 according to this embodiment.
- the aluminum-containing layer 31 is uniformly formed on the junction 30b of the CMOS chip 20 and is formed on the aluminum-containing layer 31 as in the first modification example.
- the formed germanium layer 32 is integrally formed of a single streaky layer portion 35 and a plurality of branch layer portions 36.
- the streaky layer portion 35 is formed in a square ring shape along the aluminum-containing layer 31 at the center in the width direction of the aluminum-containing layer 31.
- the plurality of branch layer portions 36 are formed so as to branch at right angles from the respective portions of the streaky layer portion 35 to both sides.
- the end portions of the germanium layer 32 are formed.
- the total area can be increased and strong eutectic bonding can be achieved.
- FIG. 8 shows a third modification of the arrangement of the aluminum-containing layer 31 and the germanium layer 32 according to this embodiment.
- the film forming arrangement of the third modification has a form in which the first modification and the second modification are combined. That is, in the third modification, the aluminum-containing layer 31 is uniformly formed on the joint portion 30b of the CMOS chip 20, and the germanium layer 32 formed on the aluminum-containing layer 31 has a plurality of streaky layer portions. 35 and a plurality of branch layer portions 36.
- the germanium layer 32 includes three concentric stripe-like layer portions 35 having a similar shape and a plurality of branch-like layer portions branched at right angles from the respective portions of the stripe-like layer portion 35 located in the middle. 36. Thereby, the MEMS chip 10 and the CMOS chip 20 can be bonded with higher sealing properties and bonding strength.
- the aluminum-containing layer 31 formed on the joint 30b of the CMOS chip 20 is composed of a plurality of aluminum annular layer portions 37.
- the plurality of aluminum annular layer portions 37 are formed in an annular shape in a plan view concentric with the joint portion 30b, and are disposed so as to be orthogonal to the inner and outer directions of the joint portion 30b.
- a plurality of annular germanium layers 32 are formed so as to fill the gaps between the plurality of aluminum annular layer portions 37.
- the plurality of germanium annular layer portions 38 are formed so as to contact in the vertical direction at the contact end portions 39 of the plurality of aluminum annular layer portions 37 and slightly overlap in the horizontal direction (multilayer portion 40). Yes.
- a plurality of pits 41 in which the substrate 11 is dug are formed in the joint portion 30a of the MEMS chip 10.
- the plurality of pits 41 are arranged so as to correspond to positions where the plurality of germanium annular layer portions 38 overlap with the plurality of aluminum annular layer portions 38 (multilayer portion 40), and are heated and pressurized in a molten state. These alloys are adapted to enter a plurality of pits 41.
- the plurality of pits 41 may be newly formed on the substrate 11 after the sensing unit 12 is formed, or a dig formed in the formation process of the sensing unit 12 may be used. Further, the pit 41 may be an intermittent hole shape or a continuous groove shape.
- FIG. 9C shows the joint after eutectic bonding.
- the molten eutectic alloy formed by heating penetrates into the plurality of pits 41 by capillary action in a vacuum by pressurization and spreads.
- the fixed eutectic alloy layer 33 is formed so as to bite into the joint portion 30 (substrate 11) of the MEMS chip 10. That is, since the eutectic alloy layer 33 is formed perpendicularly to the surface direction of the bonded portion as shown in the drawing, bonding with higher bonding strength is possible.
- the semiconductor substrates with high bonding strength and sealing property at appropriate portions while suppressing adverse effects on the sensing unit 12.
- the sensing unit 12, the integrated circuit 22, and the external circuit are electrically connected and protected from the external environment such as humidity, temperature, dust, etc. It is possible to provide a highly accurate MEMS device packaged as a unit.
- the silicon wafer on which the sensing unit 12 and the integrated circuit 22 that controls the sensing unit 12 are formed is used.
- the structure formed on the silicon wafer is not limited to this, and any circuit may be used. May be.
- a silicon wafer made of silicon a semiconductor substrate (compound semiconductor) using another material as a base material may be used.
- it is preferable that at least one of the semiconductor substrates to be bonded has an aluminum wiring.
Abstract
Description
本実施形態に係るMEMSデバイスは、このような共晶接合により製造されたものであり、例えば、加速度センサ、角速度センサ、赤外線センサ、圧力センサ、磁気センサおよび音響センサが考えられる。
図示のように、MEMSチップ10は、シリコン(Si)から成る基板11と、基板11の中央に微細加工技術により形成されたセンシング部12と、を有している。センシング部12は、基板11の中央に掘り込むように形成され、上述のように加速度センサ、角速度センサ、赤外線センサ、圧力センサ、磁気センサおよび音響センサ等の素子で構成されている。また、基板11には、センシング部12を囲繞するように、平面視方形環状の接合部30aが配設されている。実施形態のMEMSチップ10では、センシング部12および接合部30aが後述するCMOSチップ20と対面するように表裏反転させて、CMOSチップ20と接合される。そして、MEMSチップ10の接合部30aが、CMOSチップ20に形成した接合部30bに突き合わされ、接合部30bに成膜された金属層により、両者が共晶接合される。なお、基板11は、請求項でいう第1半導体基板に相当し、センシング部12は、請求項でいうMEMS構造体に相当する。
12 センシング部 11,21 基板
20 CMOSチップ 22 集積回路
31 含アルミニウム層 32 ゲルマニウム層
35 筋状層部 36 枝状層部
41 ピット
Claims (8)
- MEMS構造体を作り込んだ第1半導体基板と、
表裏一方の面にアルミニウムを主成分とする含アルミニウム層とゲルマニウム層とを接触させて成膜した接合部を有し、前記MEMS構造体を制御する集積回路を形成した第2半導体基板と、
を前記第2半導体基板の前記接合部に、前記第1半導体基板の表裏一方の面を直接接触させるように重ね、加圧・加熱して共晶接合することを特徴とする半導体基板の接合方法。 - 前記MEMS構造体は、前記第1半導体基板の表面に掘り込むようにして作りこまれ、
前記接合部は、前記集積回路を囲繞するように前記第2半導体基板の表面に環状に成膜され、
前記第1半導体基板と前記第2半導体基板とを、相互の表面同士を突き合わせ、前記MEMS構造体および前記集積回路を内包するように接合することを特徴とする請求項1に記載の半導体基板の接合方法。 - 前記含アルミニウム層は、所定の幅を有して平面視環状に成膜され、
前記ゲルマニウム層は、前記含アルミニウム層上に平面視環状に成膜された1以上の筋状層部を有していることを特徴とする請求項2に記載の半導体基板の接合方法。 - 前記含アルミニウム層は、所定の幅を有して平面視環状に成膜され、
前記ゲルマニウム層は、前記含アルミニウム層上に平面視環状に成膜された筋状層部と、前記筋状層部から分岐した複数の枝状層部と、を有していることを特徴とする請求項2に記載の半導体基板の接合方法。 - 前記接合部に直接接触する前記第1半導体基板の接触面には、前記加圧・加熱により生じた共晶合金が浸入するピットが形成されていることを特徴とする請求項1に記載の半導体基板の接合方法。
- MEMS構造体を作り込んだ第1半導体基板と、
表裏一方の面にアルミニウムを主成分とする含アルミニウム層とゲルマニウム層とを接触させて成膜した接合部を有し、前記MEMS構造体を制御する集積回路を形成した第2半導体基板と、
が前記第2半導体基板の前記接合部に、前記第1半導体基板の表裏一方の面を直接接触させるように重ねた状態で共晶接合されていることを特徴とするMEMSデバイス。 - 前記MEMS構造体は、前記第1半導体基板の表面に掘り込むようにして作りこまれ、
前記接合部は、前記集積回路を囲繞するように前記第2半導体基板の表面に環状に成膜され、
前記第1半導体基板と前記第2半導体基板とが、相互の表面同士を突き合わせ、前記MEMS構造体および前記集積回路を内包するように接合されていることを特徴とする請求項6に記載のMEMSデバイス。 - 加速度センサ、角速度センサ、赤外線センサ、圧力センサ、磁気センサおよび音響センサのいずれかであることを特徴とする請求項7に記載のMEMSデバイス。
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